CN113451872A - Quick start intermediate infrared laser and corresponding polycrystal switching device - Google Patents
Quick start intermediate infrared laser and corresponding polycrystal switching device Download PDFInfo
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- CN113451872A CN113451872A CN202110719630.4A CN202110719630A CN113451872A CN 113451872 A CN113451872 A CN 113451872A CN 202110719630 A CN202110719630 A CN 202110719630A CN 113451872 A CN113451872 A CN 113451872A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/1083—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering using parametric generation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/1305—Feedback control systems
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Abstract
The utility model discloses a quick start intermediate infrared laser and a corresponding polycrystal switching device, wherein a 813nm semiconductor laser, an energy transmission optical fiber, a first focusing lens, a second focusing lens, a first 45-degree beam splitter, an intermediate infrared parametric light output lens, a polycrystal switching device, an intermediate infrared parametric light total reflection lens and a second 45-degree beam splitter are arranged in a straight cavity of the laser from left to right; a 1084nm fundamental frequency light total reflection mirror, a third 45-degree beam splitter, a dispersion prism, a photosensitive element and a single chip microcomputer are arranged in the laser zigzag cavity, and the 1084nm fundamental frequency light total reflection mirror is opposite to the second 45-degree beam splitter; the third 45-degree beam splitter corresponds to the first 45-degree beam splitter in position, and the dispersion prism corresponds to the third 45-degree beam splitter in position; the photosensitive element corresponds to the position of the dispersion prism; the singlechip is connected with the photosensitive element and the polycrystalline switching device.
Description
Technical Field
The invention relates to the field of lasers, in particular to a quick-start intermediate infrared laser and a corresponding polycrystalline switching device.
Background
The mid-infrared laser (3-5 μm) has wide application background. The laser with the wave band of 3-5 mu m is one of the extremely important wave bands in the atmospheric projection window, and the laser with the wave band is widely applied to the military and civilian fields of photoelectric countermeasure, remote sensing detection, spectral analysis, medical diagnosis and the like, and has important research significance.
The mid-infrared Optical Parametric Oscillation (OPO) technology has the advantages of fine and compact structure, wide wavelength tuning range, high output power and the like. The periodically poled lithium niobate crystal (PPLN) has the advantages of large nonlinear coefficient, wide light transmission range, convenient temperature tuning, various wavelength tuning modes and the like, and thus becomes a hot spot of domestic and foreign research.
At present, on the basis of the traditional MgO PPLN-OPO research, the outstanding characteristic that the degree of freedom of the design of a PPLN material polarization structure can be flexibly controlled is utilized, Nd3+ ions are doped into the PPLN material, two physical processes of laser gain and optical parametric oscillation are formed in a system with only one optical element, and therefore, a new research guide is provided for realizing the purposes of miniaturization and integration of a quick-start intermediate infrared laser.
The traditional polycrystalline switching device has large volume, low switching speed and less crystal quantity, so the invention has compact structure, accurate and rapid crystal switching, high optical-mechanical-electrical integration degree and important significance for bearing a large number of polarized crystals with different periods.
Disclosure of Invention
In order to solve the problems, the invention provides a quick-start mid-infrared laser and a corresponding polycrystalline switching device, which can realize the quick output of 3.8 mu m mid-infrared laser through the application of a laser technology and a singlechip technology, break through the technical limitation that the traditional quick-start mid-infrared laser cannot adapt to the quick output of laser in a complex environment through quick switching of a periodically polarized crystal, and solve the problems of huge volume, difficult adjustment and low integration degree of the traditional quick-start mid-infrared laser.
According to an aspect of the present invention, there is provided a fast start mid-infrared laser, including a 813nm semiconductor laser, an energy transmission optical fiber, a first focusing mirror, a second focusing mirror, a first 45-degree beam splitter, a mid-infrared parametric light output mirror, a polycrystal switching device, a mid-infrared parametric light total reflection mirror, a 1084nm fundamental frequency light total reflection mirror, a second 45-degree beam splitter, a single chip microcomputer, a third 45-degree beam splitter, a dispersion prism, and a photosensitive element, wherein:
a 813nm semiconductor laser, an energy transmission optical fiber, a first focusing mirror, a second focusing mirror, a first 45-degree beam splitter, a middle infrared parametric light output mirror, a polycrystal switching device, a middle infrared parametric light total reflection mirror and a second 45-degree beam splitter are arranged in a straight cavity of the quick start middle infrared laser from left to right;
a 1084nm fundamental frequency light total reflection mirror, a third 45-degree beam splitter, a dispersion prism, a photosensitive element and a single chip microcomputer are placed in a zigzag cavity of the rapidly started intermediate infrared laser, wherein the 1084nm fundamental frequency light total reflection mirror is opposite to the second 45-degree beam splitter in position, so that the second 45-degree beam splitter can reflect incident light to the 1084nm fundamental frequency light total reflection mirror; the third 45-degree beam splitter corresponds to the first 45-degree beam splitter in position, and the dispersion prism corresponds to the third 45-degree beam splitter in position, so that the third 45-degree beam splitter can reflect a part of laser light to the dispersion prism; the photosensitive element corresponds to the position of the dispersion prism, so that the photosensitive element can sense laser with different wavelengths decomposed and output by the dispersion prism; the single chip microcomputer is connected with the photosensitive element and the polycrystalline switching device.
Optionally, the polycrystalline switching device comprises a base, a polycrystalline carrying device, a plurality of Nd: MgO: PPLN crystals with different polarization periods, and a stepping motor, wherein:
the base is used for bearing the polycrystalline body bearing device and fixing the stepping motor, the base and the polycrystalline body bearing device can be relatively movably connected, and the base and the stepping motor are in mechanical transmission;
the polycrystal carrying device is used for carrying a plurality of MgO: PPLN crystals with different polarization periods.
Optionally, the single chip microcomputer, the dispersion prism, the photosensitive element and the polycrystalline switching device form a wavelength feedback type polycrystalline switching structure.
Optionally, the intermediate infrared parametric light output mirror, the Nd, MgO, PPLN crystal in the polycrystalline switching device, and the intermediate infrared parametric light total reflection mirror form an intermediate infrared parametric oscillation cavity of the fast start intermediate infrared laser.
Optionally, the first 45-degree beam splitter, the intermediate infrared parametric oscillation cavity, the 1084nm fundamental frequency light total reflection mirror, the second 45-degree beam splitter 1, and the third 45-degree beam splitter constitute a 1084nm fundamental frequency light resonant cavity of the rapidly started intermediate infrared laser.
Optionally, the first focusing mirror and the second focusing mirror are used to form a zoom coupling mirror set to adjust the size of the pump spot focused on the end face of the Nd: MgO: PPLN crystal in the polycrystalline switching device by passing through the first 45-degree beam splitter and the mid-infrared parametric light output mirror.
Optionally, the first 45-degree beam splitter is used for transmitting the 813nm pump light and reflecting intermediate infrared parametric light; and/or the presence of a gas in the gas,
the intermediate infrared parametric light output mirror is used for transmitting the 813nm pump light, reflecting 1084nm fundamental frequency light and outputting intermediate infrared parametric light; and/or the presence of a gas in the gas,
the intermediate infrared parametric light total reflector is used for transmitting the 1084nm fundamental frequency light and reflecting the intermediate infrared parametric light; and/or the presence of a gas in the gas,
the 1084nm fundamental frequency light total reflector is used for reflecting the 1084nm fundamental frequency light; and/or the presence of a gas in the gas,
the second 45-degree beam splitter is used for reflecting the 1084nm fundamental frequency light to the 1084nm fundamental frequency light total reflection mirror; and/or the presence of a gas in the gas,
the third 45-degree beam splitter is used for transmitting the mid-infrared parametric light and reflecting a part of 3.8 mu m mid-infrared parametric light to the dispersion prism; and/or the presence of a gas in the gas,
the dispersion prism is used for decomposing laser with different wavelengths in the 3.8 mu m mid-infrared parametric light.
Optionally, the photosensitive element is configured to sense laser beams with different wavelengths output by the dispersion prism, perform spectral analysis on the mid-infrared parametric light deflected by the dispersion prism, and send an electrical signal to the single chip microcomputer.
Optionally, the single chip microcomputer is configured to receive and analyze an electrical signal of the photosensitive element, and send a PWM pulse signal to a stepping motor in the polycrystalline switching device to control a rotation speed of the stepping motor.
According to another aspect of the present invention, there is also provided a polycrystalline switching apparatus usable in the above fast start mid-infrared laser, the polycrystalline switching apparatus comprising a base, a polycrystalline carrying device, a plurality of Nd: MgO: PPLN crystals of different polarization periods, and a stepping motor, wherein:
the base is used for bearing the polycrystalline body bearing device and fixing the stepping motor, the base and the polycrystalline body bearing device can be relatively movably connected, and the base and the stepping motor are in mechanical transmission;
the polycrystal carrying device is used for carrying a plurality of MgO: PPLN crystals with different polarization periods.
The technical scheme provided by the invention has the beneficial effects that: compared with the traditional polycrystal switching mechanism, the invention can install more periodic polarization crystals by utilizing the polycrystal bearing device with a special structure, can analyze the laser wavelength by utilizing the dispersion prism and the photosensitive element, and can control the stepping motor to drive the polycrystal bearing device to rotate by utilizing the singlechip so that the periodic polarization crystals can quickly reach the accurate light transmission position, thereby realizing the quick output of infrared laser in 3.8 mu m. The invention breaks through the defect that the traditional quick-start intermediate infrared laser can not bear a large number of periodically polarized crystals to adapt to the complex working environment and quickly output the intermediate infrared laser, can timely switch the crystals with different periods according to wavelength feedback to realize the stable output of the intermediate infrared laser with the wavelength of 3.8 mu m, solves the problem that the existing quick-start intermediate infrared laser has a complex structure, and promotes the quick-start intermediate infrared laser to develop towards the direction of miniaturization and high integration of optical-mechanical-electrical-computing.
Drawings
Fig. 1 is a schematic structural diagram of a fast-start mid-infrared laser according to an embodiment of the present invention.
Fig. 2 is a schematic diagram of a multi-crystal switching device according to an embodiment of the invention.
Fig. 3 is a schematic diagram of a multi-crystal switching device according to another embodiment of the invention.
FIG. 4 is a flowchart illustrating the operation of a multi-crystal switching device according to an embodiment of the present invention.
The structural components designated by the reference numerals are:
1: a 813nm semiconductor laser; 2: an energy transmission optical fiber; 3: a first focusing mirror; 4: a second focusing mirror; 5: a first 45 degree beam splitter; 6: a mid-infrared parametric light output mirror; 7: a polycrystalline switching mechanism; 8: a mid-infrared parametric light total reflection mirror; 9: a 1084nm fundamental frequency light total reflection mirror; 10: a second 45 degree beam splitter; 11: a single chip microcomputer; 12: a third 45 degree beam splitter; 13: a dispersive prism; 14: a photosensitive element; 15: a polycrystalline switching mechanism base; 16: a polycrystalline carrying device; 17: MgO as Nd, PPLN crystal; 18: stepping motor
Detailed Description
Hereinafter, exemplary embodiments of the disclosed embodiments will be described in detail with reference to the accompanying drawings so that they can be easily implemented by those skilled in the art. Also, for the sake of clarity, parts not relevant to the description of the exemplary embodiments are omitted in the drawings.
In the disclosed embodiments, it is to be understood that terms such as "including" or "having," etc., are intended to indicate the presence of the disclosed features, numbers, steps, behaviors, components, parts, or combinations thereof, and are not intended to preclude the possibility that one or more other features, numbers, steps, behaviors, components, parts, or combinations thereof may be present or added.
It should be further noted that the embodiments and features of the embodiments in the present disclosure may be combined with each other without conflict. The embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.
Fig. 1 is a schematic structural diagram of a fast start mid-infrared laser according to an embodiment of the present invention, as shown in fig. 1, the fast start mid-infrared laser includes a 813nm semiconductor laser 1, an energy transmission fiber 2, a first focusing mirror 3, a second focusing mirror 4, a first 45-degree beam splitter 5, a mid-infrared parametric light output mirror 6, a polycrystal switching device 7, a mid-infrared parametric light total reflection mirror 8, a 1084nm fundamental frequency light total reflection mirror 9, a second 45-degree beam splitter 10, a single chip microcomputer 11, a third 45-degree beam splitter 12, a dispersion prism 13, and a photosensitive element 14, where:
a 813nm semiconductor laser 1, an energy transmission optical fiber 2, a first focusing mirror 3, a second focusing mirror 4, a first 45-degree beam splitter 5, a middle infrared parametric light output mirror 6, a polycrystal switching device 7, a middle infrared parametric light total reflection mirror 8 and a second 45-degree beam splitter 10 are arranged in a straight cavity of the quick start middle infrared laser from left to right;
a 1084nm fundamental frequency light total reflection mirror 9, a third 45-degree beam splitter 12, a dispersion prism 13, a photosensitive element 14 and a single chip microcomputer 11 are placed in a zigzag cavity of the rapidly started intermediate infrared laser, wherein the 1084nm fundamental frequency light total reflection mirror 9 is opposite to the second 45-degree beam splitter 10 in position, so that the second 45-degree beam splitter 10 can reflect incident light to the 1084nm fundamental frequency light total reflection mirror 9; the third 45-degree beam splitter 12 corresponds to the first 45-degree beam splitter 5, and the dispersion prism 13 corresponds to the third 45-degree beam splitter 12, so that the third 45-degree beam splitter 12 can reflect a part of laser light to the dispersion prism 13; the light sensing element 14 corresponds to the position of the dispersion prism 13, so that the light sensing element 14 can sense the laser light with different wavelengths decomposed and output by the dispersion prism 13; the single chip microcomputer 11 is connected with the photosensitive element 14 and the polycrystalline switching device 7.
Specifically, the method comprises the following steps:
the 813nm semiconductor laser 1 is used for emitting 813nm pump light.
The energy transmission fiber 2 is used for transmitting the 813nm pump light to the first focusing mirror 3 and the second focusing mirror 4 in sequence.
The first focusing mirror 3 and the second focusing mirror 4 are used to form a zoom coupling mirror group to adjust the size of a pump spot focused on the end face of the Nd: MgO: PPLN crystal 17 in the polycrystalline switching device 7 through the first 45-degree beam splitter 5 and the mid-infrared parametric light output mirror 6, for example, the pump spot can be adjusted to a pump spot with a radius of 400 μm, and the pump spot is focused on the end face of the Nd: MgO: PPLN crystal 17 through the first 45-degree beam splitter 5 and the mid-infrared parametric light output mirror 6.
The first 45-degree beam splitter 5 is used for transmitting the 813nm pump light and reflecting intermediate infrared parametric light.
The intermediate infrared parametric light output mirror 6 is used for transmitting the 813nm pump light, reflecting 1084nm fundamental frequency light, and outputting intermediate infrared parametric light.
The polycrystalline switching device 7 is used for bearing a plurality of Nd: MgO: PPLN crystals 17 with different polarization periods so as to switch the crystals according to the requirements of practical application.
The intermediate infrared parametric light total reflection mirror 8 is used for transmitting the 1084nm fundamental frequency light and reflecting the intermediate infrared parametric light.
The 1084nm fundamental frequency light total reflection mirror 9 is used for reflecting the 1084nm fundamental frequency light.
The second 45-degree beam splitter 10 is configured to reflect the 1084nm fundamental frequency light to the 1084nm fundamental frequency light all-reflection mirror 9.
The third 45-degree beam splitter 12 is configured to transmit the mid-infrared parametric light, and reflect a part of the 3.8 μm mid-infrared parametric light to the dispersion prism 13.
The dispersion prism 13 is used for decomposing laser with different wavelengths in the 3.8-micrometer mid-infrared parametric light.
The photosensitive element 14 is configured to sense laser beams with different wavelengths output by the dispersion prism 13, perform spectral analysis on the mid-infrared parametric light deflected by the dispersion prism 13, and send an electrical signal to the single chip microcomputer 11.
The single chip microcomputer 11 is configured to receive and analyze an electrical signal of the photosensitive element 14, and send a PWM pulse signal to the stepping motor 18 in the polycrystalline switching device 7 to control a rotation speed of the stepping motor 18.
FIG. 2 is a schematic diagram of a polycrystalline switching apparatus according to an embodiment of the present invention, as shown in FIG. 2, the polycrystalline switching apparatus includes a base 15, a polycrystalline carrying device 16, a plurality of Nd: MgO: PPLN crystals 17 with different polarization periods, and a stepping motor 18; wherein:
the base 15 is used for carrying the polycrystal carrying device 16 and fixing the stepping motor 18, the base 15 and the polycrystal carrying device 16 can be movably connected relatively, for example, by using a sliding rail, and the base 15 and the stepping motor 18 are mechanically driven by using a gear driving mode, for example.
The polycrystalline carrying device 16 is used for carrying a plurality of MgO: PPLN crystals 17 with different polarization periods.
The Nd, MgO, PPLN crystal 17 is used as a gain medium and a frequency conversion medium for generating 1084nm fundamental frequency light and mid-infrared parameter light, the gain medium and the frequency conversion medium generate 1084nm fundamental frequency light under the pumping action of 813nm pump light, and the 1084nm fundamental frequency light generates mid-infrared parameter light through the nonlinear optical effect. The wavelength of the intermediate infrared parameter light output by the rapidly started intermediate infrared laser is related to the relaxation oscillation path of the 1084nm fundamental frequency light between corresponding crystal polarization periodic channels. More specifically, the Nd MgO: PPLN crystal 17 is clamped in a preset metal jig and placed in the crystal carrier 16, and when the end face of the Nd MgO: PPLN crystal 17 is located at the lowest point of the slide rail of the base 15, the correct light passing position of the Nd MgO: PPLN crystal 17 is obtained.
The stepping motor 18 is used for driving the polycrystalline carrying device 16 to rotate to a proper position when receiving a pulse signal sent by the singlechip 11 in the quick-start intermediate infrared laser.
In an embodiment of the invention, the 813nm semiconductor laser 1 has a wavelength of 813nm, a core radius of 200 μm and a numerical aperture of 0.22.
In an embodiment of the present invention, the first 45-degree beam splitter 5 is plated with a 45-degree cornea, a 813nm pump light high-transmittance film, and a mid-infrared parametric light high-reflectance film.
In an embodiment of the present invention, the mid-infrared parametric light output mirror 6 is a flat mirror coated with a 1084nm fundamental frequency light high-transmittance film and a mid-infrared parametric light high-transmittance film.
In an embodiment of the present invention, the mid-infrared parametric light total reflection mirror 8 is a flat mirror coated with a mid-infrared parametric light high reflection film and a 1084nm fundamental frequency light high transmission film.
In an embodiment of the invention, the 1084nm fundamental frequency light total reflection mirror 9 is a flat concave mirror and is plated with a 1084nm fundamental frequency light high reflection film.
In an embodiment of the present invention, the second 45 degree beam splitter 10 is plated with a 1084nm fundamental frequency light high reflection film.
In an embodiment of the present invention, after receiving and analyzing the wavelength sensing data of the photosensitive element 14, the single chip microcomputer 11 sends a PWM pulse signal to the stepping motor 18 to control the stepping motor to rotate and position accurately.
In an embodiment of the present invention, the third 45-degree beam splitter 12 is plated with a mid-infrared parametric light high-transmittance film, and has a transmittance of 98%.
In an embodiment of the present invention, the dispersing prism 13 is coated with a mid-infrared parametric light high-transmittance film.
In one embodiment of the invention, the Nd: MgO: PPLN crystal 17 is cut by using an a-axis, and has the dimensions: the thickness multiplied by the width multiplied by the length multiplied by 2mm multiplied by 6mm multiplied by 40mm, the MgO doping concentration is set to be 5%, the Nd3+ ion doping concentration is set to be 0.4%, and both ends are coated with antireflection films, for example, the antireflection of parametric light with wave bands of 3.7 to 4.2 μm is realized. Because the invention adopts a polycrystal design, a plurality of Nd, MgO, PPLN crystals 17 with different polarization periods are adopted, and the range of the length of the polarization period covers 28-32 mu m.
In one embodiment of the present invention, the stepper motor 18 is configured to receive the pulse signal and convert the pulse signal into an angular displacement to rotate the polycrystalline carrying device 16 to a suitable position.
The single chip microcomputer 11, the dispersion prism 13, the photosensitive element 14 and the polycrystalline switching device 7 form a wavelength feedback type polycrystalline switching structure.
The intermediate infrared parametric optical output mirror 6, the Nd, namely MgO, PPLN crystal 17 in the polycrystal switching device 7 and the intermediate infrared parametric optical total reflection mirror 8 form an intermediate infrared parametric oscillation cavity of the rapidly started intermediate infrared laser; the first 45-degree beam splitter 5, the intermediate infrared parametric oscillation cavity, the 1084nm fundamental frequency light total reflection mirror 9, the second 45-degree beam splitter 10 and the third 45-degree beam splitter 12 form a 1084nm fundamental frequency light resonant cavity of the rapidly started intermediate infrared laser.
Based on the scheme, the 813nm semiconductor laser 1 emits pump light with the wavelength of 813nm, the 813nm pump light penetrates through the energy transmission optical fiber 2, the first focusing mirror 3, the second focusing mirror 4, the first 45-degree beam splitter 5 and the intermediate infrared parametric light output mirror 6 and then is focused into the Nd, MgO, PPLN crystal 17 in the polycrystalline switching device 7 from the left end to form a single-ended pump mode, the Nd, MgO, PPLN crystal 17 absorbs the pump light with the main peak wavelength to form population inversion, when the gain in the 1084nm fundamental frequency light resonant cavity is larger than the loss, the Nd, MgO, PPLN crystal 17 is excited to emit 1084nm fundamental frequency light, when the 1084nm fundamental frequency light penetrates through the intermediate infrared parametric light total reflection mirror 8 and is reflected by the 1084nm fundamental frequency light total reflection mirror 9 to enter the intermediate infrared parametric oscillation cavity, the 1084nm fundamental frequency light is converted in the intermediate infrared parametric oscillation cavity, the gain in the intermediate infrared parametric oscillation cavity is larger than the loss, the mid-infrared parametric light of 3.8 μm is output by the mid-infrared parametric light output mirror 6.
Fig. 1 shows the propagation paths of 1084nm fundamental frequency light and 3.8 μm mid-infrared parametric light in a fast-start mid-infrared laser, wherein the dashed line represents 1084nm fundamental frequency light and the solid line represents 3.8 μm mid-infrared parametric light.
Fig. 4 is a flowchart illustrating the operation of the polycrystalline switching apparatus according to an embodiment of the present invention, wherein the photosensitive element 14 determines whether the wavelength of the received mid-infrared parametric light deflected by the dispersing prism 13 is 3.8 μm, and if the wavelength of the mid-infrared parametric light is 3.8 μm, the laser is directly output; if the wavelength of the mid-infrared parametric light is not 3.8 μm, the single chip microcomputer 11 sends a PWM pulse signal to the stepping motor 18 to control the stepping motor 18 to rotate and drive the crystal bearing device 16 to move to a proper light-passing position on the slide rail, and the rotary encoder is a device for ensuring that the rotation precision of the stepping motor can meet the requirement, so that the rotary encoder is installed and connected with the stepping motor through a coupler to detect the position of the rotor in real time and send an electric signal to the single chip microcomputer 11, so as to finally ensure the precision of the position of the crystal.
In summary, the present invention is directed to a polycrystalline switching device for fast start-up of a mid-ir laser, which cannot sense a wavelength-switched periodically poled crystal in real time and has poor stability. A45-degree beam splitter is built in a zigzag cavity of a laser to split intermediate infrared parametric light output by the laser and reflect a small part of the intermediate infrared parametric light to enter a dispersion prism, the intermediate infrared parametric light with different wavelengths is deflected by the dispersion prism, the deflected intermediate infrared parametric light with different wavelengths accurately enters different photosensitive elements, electric signals are emitted to a single chip microcomputer by the photosensitive elements generating strong reaction, the single chip microcomputer analyzes the electric signals fed back by the photosensitive elements to judge the wavelength of the intermediate infrared laser and control a polycrystalline switching device to switch Nd (MgO: PPLN) crystals with corresponding polarization periods, and finally output of the intermediate infrared laser with the wavelength of 3.8 mu m is realized.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (10)
1. The utility model provides a quick start intermediate infrared laser, its characterized in that, the laser includes 813nm semiconductor laser, passes can optic fibre, first focusing mirror, second focusing mirror, first 45 degrees beam splitters, well infrared parametric light output mirror, polycrystal auto-change over device, well infrared parametric light total reflection mirror, 1084nm fundamental frequency light total reflection mirror, second 45 degrees beam splitters, singlechip, third 45 degrees beam splitters, dispersion prism and photosensitive element, wherein:
a 813nm semiconductor laser, an energy transmission optical fiber, a first focusing mirror, a second focusing mirror, a first 45-degree beam splitter, a middle infrared parametric light output mirror, a polycrystal switching device, a middle infrared parametric light total reflection mirror and a second 45-degree beam splitter are arranged in a straight cavity of the quick start middle infrared laser from left to right;
a 1084nm fundamental frequency light total reflection mirror, a third 45-degree beam splitter, a dispersion prism, a photosensitive element and a single chip microcomputer are placed in a zigzag cavity of the rapidly started intermediate infrared laser, wherein the 1084nm fundamental frequency light total reflection mirror is opposite to the second 45-degree beam splitter in position, so that the second 45-degree beam splitter can reflect incident light to the 1084nm fundamental frequency light total reflection mirror; the third 45-degree beam splitter corresponds to the first 45-degree beam splitter in position, and the dispersion prism corresponds to the third 45-degree beam splitter in position, so that the third 45-degree beam splitter can reflect a part of laser light to the dispersion prism; the photosensitive element corresponds to the position of the dispersion prism, so that the photosensitive element can sense laser with different wavelengths decomposed and output by the dispersion prism; the single chip microcomputer is connected with the photosensitive element and the polycrystalline switching device.
2. The laser of claim 1, wherein the polycrystalline switching device comprises a base, a polycrystalline carrying device, a plurality of Nd: MgO: PPLN crystals with different polarization periods, and a stepping motor, wherein:
the base is used for bearing the polycrystalline body bearing device and fixing the stepping motor, the base and the polycrystalline body bearing device can be relatively movably connected, and the base and the stepping motor are in mechanical transmission;
the polycrystal carrying device is used for carrying a plurality of MgO: PPLN crystals with different polarization periods.
3. The laser according to claim 1 or 2, wherein the single chip microcomputer, the dispersion prism, the photosensitive element and the polycrystalline switching device form a wavelength feedback type polycrystalline switching structure.
4. The laser according to any of claims 1-3, wherein said mid-infrared parametric optical output mirror, said Nd: MgO: PPLN crystal in said polycrystalline switching device, and said mid-infrared parametric optical holomirror form a mid-infrared parametric oscillator cavity of said fast start mid-infrared laser.
5. The laser as claimed in claim 4, wherein the first 45 degree beam splitter, the mid-infrared parametric oscillation cavity, the 1084nm fundamental frequency optical total reflection mirror, the second 45 degree beam splitter 1, and the third 45 degree beam splitter constitute a 1084nm fundamental frequency optical resonant cavity of the fast start mid-infrared laser.
6. The laser of any of claims 1-5, wherein the first and second focusing mirrors are configured as a zoom coupler to adjust the size of the pump spot focused through the first 45 degree beam splitter and mid-IR parametric optical output mirror onto the end face of the Nd: MgO: PPLN crystal in the multi-crystal switching device.
7. The laser of any of claims 1-6, wherein the first 45 degree beam splitter is configured to transmit the 813nm pump light and reflect mid-infrared parametric light; and/or the presence of a gas in the gas,
the intermediate infrared parametric light output mirror is used for transmitting the 813nm pump light, reflecting 1084nm fundamental frequency light and outputting intermediate infrared parametric light; and/or the presence of a gas in the gas,
the intermediate infrared parametric light total reflector is used for transmitting the 1084nm fundamental frequency light and reflecting the intermediate infrared parametric light; and/or the presence of a gas in the gas,
the 1084nm fundamental frequency light total reflector is used for reflecting the 1084nm fundamental frequency light; and/or the presence of a gas in the gas,
the second 45-degree beam splitter is used for reflecting the 1084nm fundamental frequency light to the 1084nm fundamental frequency light total reflection mirror; and/or the presence of a gas in the gas,
the third 45-degree beam splitter is used for transmitting the mid-infrared parametric light and reflecting a part of 3.8 mu m mid-infrared parametric light to the dispersion prism; and/or the presence of a gas in the gas,
the dispersion prism is used for decomposing laser with different wavelengths in the 3.8 mu m mid-infrared parametric light.
8. The laser as claimed in any one of claims 1 to 7, wherein said photosensitive element is used for sensing laser light of different wavelengths output by said dispersion prism, performing spectral analysis on mid-infrared parametric light deflected by the dispersion prism, and sending an electrical signal to said single chip microcomputer.
9. The laser as claimed in any one of claims 1 to 8, wherein the single chip microcomputer is configured to receive and analyze the electrical signal from the photosensitive element, and to send a PWM pulse signal to a stepping motor in the polycrystalline switching device to control the rotation speed of the stepping motor.
10. A polycrystalline switching device usable for a fast start mid-ir laser according to any one of claims 1 to 9, comprising a base, a polycrystalline carrier, a plurality of Nd: MgO: PPLN crystals of different polarization periods, and a stepping motor, wherein:
the base is used for bearing the polycrystalline body bearing device and fixing the stepping motor, the base and the polycrystalline body bearing device can be relatively movably connected, and the base and the stepping motor are in mechanical transmission;
the polycrystal carrying device is used for carrying a plurality of MgO: PPLN crystals with different polarization periods.
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