CN113451421A - Centrosymmetric double-row GaN Schottky diode - Google Patents
Centrosymmetric double-row GaN Schottky diode Download PDFInfo
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- CN113451421A CN113451421A CN202110837039.9A CN202110837039A CN113451421A CN 113451421 A CN113451421 A CN 113451421A CN 202110837039 A CN202110837039 A CN 202110837039A CN 113451421 A CN113451421 A CN 113451421A
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- schottky diode
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- 239000002184 metal Substances 0.000 claims description 51
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 230000008719 thickening Effects 0.000 claims description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 238000002161 passivation Methods 0.000 claims description 10
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 claims 1
- 238000003466 welding Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a centrosymmetric double-row GaN Schottky diode, and relates to the technical field of terahertz devices. The diode comprises a first bonding pad positioned in the middle and second bonding pads positioned on two sides of the first bonding pad, wherein two Schottky diode junctions are formed between the first bonding pad and the second bonding pad on the left side, two Schottky diode junctions are formed between the first bonding pad and the second bonding pad on the right side, a beam lead with the outer end being suspended is formed in the center of the upper surface of the first bonding pad, the lengths of the suspended parts of the beam lead are equal, and the use yield of the diode can be improved.
Description
Technical Field
The invention relates to the technical field of terahertz devices, in particular to a novel centrosymmetric double-row GaN Schottky diode.
Background
The terahertz wave is an electromagnetic wave with the frequency within the range of 100GHz-10THz, and a terahertz frequency doubling source can be realized at the low end of the terahertz frequency based on a Schottky diode. At present, a GaAs-based Schottky diode is commonly used, but the GaAs-based Schottky diode has breakdown resistance characteristics which are not as good as those of a GaN Schottky diode with a larger forbidden bandwidth, so that a technology for manufacturing a high-power terahertz source based on the GaN Schottky diode becomes a relatively potentially valuable technology. Currently, a common GaN schottky diode is in a diode form that is connected in series in the same direction or extends to two ends by using an intermediate bonding pad. When the Schottky junction diode is used for frequency doubling, the number of Schottky junctions needs to be increased in order to improve output power, and the endurance power of the Schottky diode can be increased by increasing the number of Schottky junctions in the transverse dimension or the longitudinal dimension.
Disclosure of Invention
The invention aims to solve the technical problem of how to provide a centrosymmetric double-row GaN Schottky diode which can improve the use yield, improve the power resistance characteristic and increase the output power.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows: a centrosymmetric double-row GaN Schottky diode is characterized in that: the Schottky diode junction structure comprises a first bonding pad positioned in the middle and second bonding pads positioned on two sides of the first bonding pad, wherein two Schottky diode junctions are formed between the first bonding pad and the second bonding pad on the left side, two Schottky diode junctions are formed between the first bonding pad and the second bonding pad on the right side, the Schottky diode junctions are arranged along the front and back direction of the first bonding pad, a beam lead with the outer end being suspended is formed in the center of the upper surface of the first bonding pad, and the lengths of the suspended parts of the beam lead are equal.
The further technical scheme is as follows: the Schottky diode junction comprises a semi-insulating GaN substrate layer, a passivation layer is formed in the middle of the upper surface of the semi-insulating GaN substrate layer, heavily doped GaN layers are formed on the left side and the right side of the passivation layer respectively, ohmic contact metal layers are embedded in the heavily doped GaN layers on the left side and the right side, the upper surfaces of the ohmic contact metal layers are higher than the upper surfaces of the heavily doped GaN layers, the areas of the ohmic contact metal layers are smaller than those of the heavily doped GaN layers on the corresponding sides, low-doped GaN layers are formed on the upper surfaces of the heavily doped GaN layers without the ohmic contact metal layers, the heights of the low-doped GaN layers are higher than those of the ohmic contact metal layers, metal thickening layers are formed on the upper surfaces of the ohmic contact metal layers, silicon dioxide layers are formed on the upper surfaces of the low-doped GaN layers, and Schottky contact metal layers are embedded in the silicon dioxide layers on the left sides, and the Schottky contact metal layer is contacted with the low-doped GaN layer, the height of the metal thickening layer is higher than that of the silicon dioxide layer, and the metal thickening layer on the right side is connected with the Schottky contact metal layer through a metal air bridge.
Adopt the produced beneficial effect of above-mentioned technical scheme to lie in: the GaN Schottky diode adopting the novel structure can be applied to even frequency multiplication and odd frequency multiplication of millimeter wave and terahertz frequency bands. In order to facilitate welding, an upper beam lead and a lower beam lead can be introduced to the bonding pad between the two Schottky junctions in the middle, so that the assembly of the conductive adhesive is facilitated. The Schottky diode based on the novel structure can be used on trial without distinguishing the positive direction and the negative direction, and because the three welding pads are of pure metal structures in the welding process, the Schottky junction cannot be burnt, and the use yield of the Schottky diode is improved. In addition, the diode adopts a double-row Schottky junction structure, so that the power resistance characteristic to input power can be improved, and the output power can be increased.
Drawings
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Fig. 1 is a schematic top view of a diode according to an embodiment of the invention;
FIG. 2 is a schematic top view of an embodiment of the present invention with the beam lead removed;
FIG. 3 is a schematic sectional view taken along line A-A in FIG. 2;
FIG. 4 is a schematic cross-sectional view taken along line B-B of FIG. 1;
wherein: 1. the GaN-based semiconductor device comprises a passivation layer, 2, a silicon dioxide layer, 3, an ohmic contact metal layer, 4, a metal thickening layer, 5, a semi-insulating GaN substrate layer, 6, a heavily doped GaN layer, 7, a low doped GaN layer, 8 and a Schottky contact metal layer; 9. beam type leads; 10. a first pad; 11. a second bonding pad.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
As shown in fig. 1, the embodiment of the invention discloses a centrosymmetric double-row GaN schottky diode, which includes a first pad 10 located in the middle and second pads 11 located on both sides of the first pad 10, wherein two schottky diode junctions are formed between the first pad 10 and the second pad 11 on the left side, two schottky diode junctions are formed between the first pad 10 and the second pad 11 on the right side, the schottky diode junctions are arranged along the front-back direction of the first pad, a beam lead 9 with a suspended outer end is formed in the center of the upper surface of the first pad 10, and the lengths of the suspended portions of the beam lead 9 are equal.
The distribution structure of the Schottky junction is opposite to the current direction of a diode form which adopts a pure bonding pad in the middle and extends towards two ends. The GaN Schottky diode adopting the novel structure can be applied to even frequency multiplication and odd frequency multiplication of millimeter wave and terahertz frequency bands. In order to facilitate welding, an upper beam lead and a lower beam lead are led in the first bonding pad between the two Schottky junctions in the middle, and therefore assembly of the conductive adhesive is facilitated. When the Schottky diode based on the novel structure is used, the positive direction and the negative direction can not be distinguished, and because in the welding process, the three welding pads are all of pure metal structures, the situation that Schottky junctions are burnt can not exist, and the use yield of the Schottky diode is improved.
Further, as shown in fig. 2 and 3, the schottky diode junction includes a semi-insulating GaN substrate layer 5, a passivation layer 1 is formed in the middle of the upper surface of the semi-insulating GaN substrate layer 5, heavily doped GaN layers 6 are respectively formed on the left and right sides of the passivation layer 1, and ohmic contact metal layers 3 are embedded in the heavily doped GaN layers 6 on the left and right sides; the upper surface of the ohmic contact metal layer 3 is higher than the upper surface of the heavily doped GaN layer 6, the area of the ohmic contact metal layer 3 is smaller than that of the heavily doped GaN layer 6 on the corresponding side, a low-doped GaN layer 7 is formed on the upper surface of the heavily doped GaN layer 6 without the ohmic contact metal layer 3, and the height of the low-doped GaN layer 7 is higher than that of the ohmic contact metal layer 3; a metal thickening layer 4 is formed on the upper surface of the ohmic contact metal layer 3, a silicon dioxide layer 2 is formed on the upper surface of the low-doped GaN layer 7, a Schottky contact metal layer 8 is embedded in the silicon dioxide layer 2 on the left side, and the Schottky contact metal layer 8 is in contact with the low-doped GaN layer 7; the metal thickening layer 4 has a height higher than that of the silicon dioxide layer 2, and the metal thickening layer 4 on the right side is connected with the schottky contact metal layer 8 through a metal air bridge 9, as shown in fig. 4.
Preferably, the passivation layer 1 may be made of silicon dioxide, silicon nitride or diamond; the ohmic contact metal layer 3 can be a Ti layer, an Al layer, a Ni layer and an Au layer from bottom to top; the metal thickening layer 4 may be made of Au, and the schottky contact metal layer 8 may be a Ti layer, a Pt layer, and an Au layer from bottom to top, which are only preferred embodiments of the present embodiment, and those skilled in the art may select other materials to prepare the diode.
In addition, the GaN Schottky frequency doubling diode can be realized through a mature Schottky diode processing technology, the manufacturing technology of the current Schottky diode is mature at home and abroad, and the manufacturing technology comprises cathode ohmic contact, anode Schottky metal evaporation, air bridge connection, manufacturing of an isolation groove and a passivation layer and the like.
Claims (7)
1. A centrosymmetric double-row GaN Schottky diode is characterized in that: the LED packaging structure comprises a first bonding pad (10) located in the middle and second bonding pads (11) located on two sides of the first bonding pad (10), wherein two Schottky diode junctions are formed between the first bonding pad (10) and the second bonding pad (11) on the left side, two Schottky diode junctions are formed between the first bonding pad (10) and the second bonding pad (11) on the right side, the Schottky diode junctions are arranged along the front and back direction of the first bonding pad, a beam lead (9) with a suspended outer end is formed in the center of the upper surface of the first bonding pad, and the lengths of the suspended parts of the beam lead (9) are equal.
2. The centrosymmetric dual-row GaN schottky diode of claim 1, wherein: the Schottky diode junction comprises a semi-insulating GaN substrate layer (5), a passivation layer (1) is formed in the middle of the upper surface of the semi-insulating GaN substrate layer (5), heavily doped GaN layers (6) are respectively formed on the left side and the right side of the passivation layer (1), ohmic contact metal layers (3) are embedded in the heavily doped GaN layers (6) on the left side and the right side, the upper surfaces of the ohmic contact metal layers (3) are higher than the upper surfaces of the heavily doped GaN layers (6), the area of each ohmic contact metal layer (3) is smaller than that of the corresponding heavily doped GaN layer (6), a low-doped GaN layer (7) is formed on the upper surface of the heavily doped GaN layer (6) without the ohmic contact metal layers (3), the height of the low-doped GaN layer (7) is higher than that of the ohmic contact metal layers (3), and a metal thickening layer (4) is formed on the upper surface of each ohmic contact metal layer (3), the upper surface of the low-doped GaN layer (7) is provided with a silicon dioxide layer (2), a Schottky contact metal layer (8) is embedded in the silicon dioxide layer (2) on the left side, the Schottky contact metal layer (8) is in contact with the low-doped GaN layer (7), the metal thickening layer (4) is higher than the silicon dioxide layer (2), and the metal thickening layer (4) on the right side is connected with the Schottky contact metal layer (8) through a metal air bridge (9).
3. The centrosymmetric dual-row GaN schottky diode of claim 2, wherein: the beam lead is located on the upper surface of the left metal thickening layer (4).
4. The centrosymmetric dual-row GaN schottky diode of claim 2, wherein: the passivation layer (1) is silicon dioxide, silicon nitride or diamond.
5. The centrosymmetric dual-row GaN schottky diode of claim 2, wherein: the ohmic contact metal layer (3) is a Ti layer, an Al layer, a Ni layer and an Au layer from bottom to top.
6. The centrosymmetric dual-row GaN schottky diode of claim 2, wherein: the component of the metal thickening layer (4) is Au.
7. The centrosymmetric dual-row GaN schottky diode of claim 2, wherein: the Schottky contact metal layer (8) is a Ti layer, a Pt layer and an Au layer from bottom to top.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110837039.9A CN113451421A (en) | 2021-07-23 | 2021-07-23 | Centrosymmetric double-row GaN Schottky diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110837039.9A CN113451421A (en) | 2021-07-23 | 2021-07-23 | Centrosymmetric double-row GaN Schottky diode |
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| CN113451421A true CN113451421A (en) | 2021-09-28 |
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| CN202110837039.9A Pending CN113451421A (en) | 2021-07-23 | 2021-07-23 | Centrosymmetric double-row GaN Schottky diode |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4131858A (en) * | 1977-11-30 | 1978-12-26 | Westinghouse Electric Corp. | Beam lead dual parametric amplifier |
| CN104795453A (en) * | 2015-04-24 | 2015-07-22 | 中国电子科技集团公司第十三研究所 | Gallium arsenide-based Schottky frequency-doubling diode with multi-beam leads |
| CN104851864A (en) * | 2015-05-27 | 2015-08-19 | 中国电子科技集团公司第十三研究所 | GaN schottky diode with hanging beam lead structure and manufacturing method thereof |
| CN104867968A (en) * | 2015-06-12 | 2015-08-26 | 四川迈格酷科技有限公司 | Terahertz low-frequency GaAs based high-power schottky frequency multiplication diode |
| US20170155361A1 (en) * | 2014-05-08 | 2017-06-01 | Tokyo Institute Of Technology | Frequency-variable terahertz oscillator and method for manufacturing the same |
| CN111599703A (en) * | 2020-05-09 | 2020-08-28 | 中国电子科技集团公司第十三研究所 | Preparation method of beam lead of GaN device or circuit on SiC substrate |
-
2021
- 2021-07-23 CN CN202110837039.9A patent/CN113451421A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4131858A (en) * | 1977-11-30 | 1978-12-26 | Westinghouse Electric Corp. | Beam lead dual parametric amplifier |
| US20170155361A1 (en) * | 2014-05-08 | 2017-06-01 | Tokyo Institute Of Technology | Frequency-variable terahertz oscillator and method for manufacturing the same |
| CN104795453A (en) * | 2015-04-24 | 2015-07-22 | 中国电子科技集团公司第十三研究所 | Gallium arsenide-based Schottky frequency-doubling diode with multi-beam leads |
| CN104851864A (en) * | 2015-05-27 | 2015-08-19 | 中国电子科技集团公司第十三研究所 | GaN schottky diode with hanging beam lead structure and manufacturing method thereof |
| CN104867968A (en) * | 2015-06-12 | 2015-08-26 | 四川迈格酷科技有限公司 | Terahertz low-frequency GaAs based high-power schottky frequency multiplication diode |
| CN111599703A (en) * | 2020-05-09 | 2020-08-28 | 中国电子科技集团公司第十三研究所 | Preparation method of beam lead of GaN device or circuit on SiC substrate |
Non-Patent Citations (2)
| Title |
|---|
| A. MAESTRINI等: ""A 1.7-1.9 THz local oscillator source"", 《IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS》 * |
| 吴三统: ""基于单片集成二极管技术的太赫兹倍频链路研究"", 《信息科技辑》 * |
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Application publication date: 20210928 |