CN113451414A - Thin film transistor device and preparation method thereof - Google Patents
Thin film transistor device and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
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- Ceramic Engineering (AREA)
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a thin film transistor device and a preparation method thereof. The thin film transistor device includes: the projection of the organic material layer on the substrate covers the oxide semiconductor layer, and the organic material layer is configured to block light rays with the wavelength less than 470 nanometers which are emitted from one side of the organic material layer, so that the oxide semiconductor layer in the thin film transistor device is prevented from generating more oxygen vacancy defects in a channel due to the fact that the light rays with the wavelength less than 470 nanometers irradiate, further threshold voltage negative shift can be effectively prevented, and the stability of the device is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a thin film transistor device and a preparation method thereof.
Background
A TFT (Thin Film Transistor) device type display screen is a mainstream display device on various notebook computers and desktop computers, and each liquid crystal pixel point on the display screen is driven by a Thin Film Transistor integrated behind the pixel point, so the TFT device type display screen is also an active matrix liquid crystal display device. The TFT device type display has advantages of high responsivity, high brightness, high contrast, etc., and its display effect is close to that of a CRT (Cathode Ray Tube) type display.
In a conventional TFT device type display screen, an oxide semiconductor (e.g., indium gallium zinc oxide) is generally used as an active layer in a TFT device, and the use of indium gallium zinc oxide as the active layer in the TFT device has many advantages, such as high electron mobility, high transmittance, and low cost.
At present, the functional layer (e.g., the pixel defining layer) on the oxide semiconductor layer generally uses organic materials, which do not have the blocking effect of uv/short wavelength visible light, and thus the uv and short wavelength visible light cannot be effectively prevented from irradiating the oxide semiconductor layer, thereby increasing the electrical instability of the TFT device.
Accordingly, the prior art is yet to be improved and developed.
Disclosure of Invention
In view of the above-mentioned deficiencies of the prior art, an object of the present invention is to provide a thin film transistor device and a method for manufacturing the same, which are intended to solve the problem that light irradiation affects the stability of an oxide semiconductor layer in the conventional thin film transistor device.
A thin film transistor device, comprising:
a substrate;
a gate formed on the substrate;
the first protective layer is formed on the substrate and covers the grid;
an oxide semiconductor layer formed on the first protective layer and disposed corresponding to the gate electrode;
a source electrode and a drain electrode formed on the oxide semiconductor layer;
an anode pattern layer formed on the drain electrode;
the second protective layer is formed on the source electrode and the drain electrode which are not covered by the anode pattern layer;
an organic material layer formed on the second protective layer; the projection of the organic material layer on the substrate covers the oxide semiconductor layer, and the organic material layer is configured to block light with a wavelength less than 470 nanometers from entering from one side of the organic material layer.
In one embodiment, the thin film transistor device, wherein the source electrode and the drain electrode each include a titanium metal layer, an aluminum metal layer, and a molybdenum metal layer stacked in this order.
In one embodiment, the material of the oxide semiconductor layer includes indium gallium zinc oxide or rare earth metal oxide.
In one embodiment, the thin film transistor device, wherein the organic material layer comprises a photoresist material doped with a black polymer or a colored dye.
In one embodiment, the thin film transistor device, wherein the photoresist material comprises an acrylic negative photoresist material or a non-acrylic positive photoresist material.
In one embodiment, the doping amount of the black polymer or the colored dye in the photoresist material is 60 to 99%.
In one embodiment, the thin film transistor device, wherein the colored dye includes one or more of phthalocyanine dyes and pyrrolopyrrole dione organic dyes.
In one embodiment, the thin film transistor device, wherein the black polymer includes one or two of a perylene polymer and a polyurethane-based black polymer.
In one embodiment, the thin film transistor device, wherein the organic material layer has a thickness of 1 to 3 μm.
A method of fabricating a thin film transistor device, comprising:
providing a substrate;
depositing a first metal layer on the substrate, and patterning the first metal layer to form a gate;
depositing a first protective layer on the substrate and the gate, wherein the first protective layer covers the gate;
depositing an oxide and a second metal layer on the first protective layer in sequence, patterning the second metal layer to form a second metal layer subjected to first patterning, and patterning the oxide to form an oxide semiconductor layer;
depositing a third metal layer on the second metal layer subjected to the first patterning treatment, and performing patterning treatment on the third metal layer to form a patterned third metal layer;
depositing an anode material on the patterned third metal layer, and patterning the anode material to form an anode pattern layer;
performing patterning treatment on the second metal layer subjected to the first patterning treatment again to form a source electrode and a drain electrode;
depositing a protective layer material on the source electrode and the drain electrode, carrying out patterning treatment on the protective layer material, and forming a second protective layer on the source electrode and the drain electrode which are not covered by the anode pattern layer;
and forming an organic material layer on the second protective layer, wherein the projection of the organic material layer on the substrate covers the oxide semiconductor layer, and the organic material layer is configured to block light with a wavelength less than 470 nanometers which is emitted from one side of the organic material layer.
Has the advantages that: in the thin film transistor device, the organic material layer is configured to block light with a wavelength smaller than 470nm incident from one side of the organic material layer, so that more oxygen vacancy defects are prevented from being generated in a channel due to the fact that the oxide semiconductor layer in the thin film transistor device is irradiated by the light with the wavelength smaller than 470nm, and further negative shift of threshold voltage can be effectively prevented, and stability of the device is improved.
Drawings
Fig. 1 is a graph of electrical performance of a conventional thin film transistor device.
Fig. 2 is a schematic structural diagram of a conventional thin film transistor device.
Fig. 3 is a schematic structural diagram of a thin film transistor device according to the present invention.
Fig. 4 is a schematic structural diagram of a device after a gate is fabricated in the fabrication method of the present invention.
Fig. 5 is a schematic structural diagram of the device after the first protective layer is prepared in the preparation method of the present invention.
Fig. 6 is a schematic view of the device structure after the oxide semiconductor layer is prepared in the preparation method of the present invention.
Fig. 7 is a schematic structural diagram of a device after patterning an aluminum metal layer and a molybdenum metal layer in the manufacturing method of the present invention.
Fig. 8 is a schematic structural diagram of a device after an anode pattern layer is prepared in the preparation method of the present invention.
Fig. 9 is a schematic structural diagram of a device after patterning a titanium metal layer in the preparation method of the present invention.
Fig. 10 is a schematic structural diagram of the device after the second protective layer is prepared in the preparation method of the present invention.
Fig. 11 is a schematic structural diagram of a device after an organic material layer is prepared in the preparation method of the present invention.
FIG. 12 is a UV spectrum of an acrylic photoresist material doped with a colored dye according to the present invention.
FIG. 13 is a comparison graph of water absorption of a non-acrylic positive photoresist material doped with a color dye and polyimide according to the present invention.
Description of reference numerals:
1: substrate, 2: a gate, 3: first protective layer, 4: oxide semiconductor layer, 5: source, drain, 501: titanium metal layer, 502: aluminum metal layer, 503: molybdenum metal layer, 6: anode pattern layer, 7: second protective layer, 8: and an organic material layer.
Detailed Description
The present invention provides a thin film transistor device, and the present invention will be described in further detail below in order to make the objects, technical solutions, and effects of the present invention clearer and clearer. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Each liquid crystal pixel point on the liquid crystal display is driven by a thin film transistor integrated behind the liquid crystal display, so that screen information can be displayed at high speed, high brightness and high contrast, and a TFT-LCD (thin film transistor liquid crystal display) is one of the liquid crystal displays. The TFT device type screen is also widely applied to medium-high-end color screen mobile phones and is divided into 65536 colors, 16 ten thousand colors and 1600 ten thousand colors, and the display effect is very excellent. However, as shown in fig. 1, a TFT prepared by using indium gallium zinc oxide as an oxide semiconductor layer material according to a conventional method is prone to excite defect states such as oxygen vacancy in an oxide channel after being irradiated by light with a wavelength of less than 470nm during operation, thereby negatively shifting a threshold voltage.
The thin film transistor device may employ an Etch Stopper (ES) structure and a Back Channel Etching (BCE) structure as shown in fig. 2. The ES device has the advantages of small series resistance, no damage to a back channel, large opening current, low off-state current and the like; the BCE structure has the advantages of simple process and less photomask. The BCE structure is more commonly used on the premise that the device performance meets the requirements.
As shown in fig. 3, the present invention provides a thin film transistor device, comprising:
a substrate 1;
a gate 2 formed on the substrate 1;
a first protective layer 3 formed on the substrate 1 and covering the gate 2;
an oxide semiconductor layer 4 formed on the first protective layer 3 and provided corresponding to the gate electrode 2;
source and drain electrodes 5 formed on the oxide semiconductor layer 4;
an anode pattern layer 6 formed on the drain electrode;
a second passivation layer 7 formed on the source and drain electrodes not covered by the anode pattern layer 6;
an organic material layer 8 formed on the second protective layer 7; the projection of the organic material layer 8 on the substrate covers the oxide semiconductor layer, and the organic material layer 8 is configured to block light with a wavelength less than 470nm incident from one side of the organic material layer 8.
In the thin film transistor device of the present invention, the organic material layer 8 side may refer to a side of the organic material layer 8 away from the oxide semiconductor layer 4. Light having a wavelength of less than 470nm in the present invention is typically UV light (ultraviolet light) and short wavelength visible light (higher energy visible light).
The organic material layer 8 of the present invention is configured to block light having a wavelength less than 470nm incident from a side of the organic material layer 8, and prevent the oxide semiconductor layer 4 in the thin film transistor device from generating more oxygen vacancy defects in the channel due to irradiation with light having a wavelength less than 470 nm.
The organic material layer 8 of the present invention can be used as a pixel defining layer or a planarization layer of the thin film transistor device, and can also be used as a functional layer for blocking light with a wavelength less than 470 nm.
In one implementation of the invention, the thin film transistor device includes: the organic light-emitting diode comprises a substrate 1, a grid 2, a first protective layer (insulating layer) 3, an oxide semiconductor layer (active layer) 4, a source electrode and a drain electrode 5, an anode pattern layer 6, a second protective layer (metal protective layer) 7 and an organic material layer 8 which are sequentially stacked from bottom to top.
The source electrode and the drain electrode 5 of the thin film transistor device are composed of a source electrode and a drain electrode; the position between the source and the drain corresponds to the channel region of the oxide semiconductor layer 4.
In addition, the thin film transistor device may further include a region having a stacked structure of: the second protective layer 7 is stacked on the source and drain electrodes 5, and the second protective layer 7 is stacked on the oxide semiconductor layer 4 in the channel region.
In one embodiment, the thin film transistor device further has the following regions: the first protective layer 3 is a region where the oxide semiconductor layer 4 is not stacked. A source and a drain electrode 5 may be provided on a region where the oxide semiconductor layer 4 is not stacked on the first protective layer 3, that is, a Capacitance Structure (CST) in the thin film transistor device is formed.
In one embodiment, the thin film transistor device further has the following regions: the area of the first protective layer 3 in contact with the second protective layer 7. Since the oxide semiconductor layer 4 and the source and drain electrodes 5 which are not stacked are present on the first protective layer 3 in the thin film transistor device, a region where the first protective layer 3 is in contact with the second protective layer 7 is formed.
In one embodiment, the thin film transistor device further has the following regions: and a cut-off region of the second protective layer 7 through which the anode layer pattern layer is stacked on the source and drain electrodes, wherein the cut-off region is to allow the deposited anode to contact the source and drain electrodes, thereby achieving electrical conduction.
In one implementation of the present invention, the material of the Gate (Gate layer) 2 is a metal conductive material. The main material of the gate 2 is a conductive material with low conductivity, and specifically, the metal conductive material is one of copper, aluminum, molybdenum and titanium.
In one implementation of the invention, the materials of the first protective layer 3 and the second protective layer 7 are both SiOxWherein 0 is<x is less than or equal to 2. The first protective layer 3 and the second protective layer 7 may be identical SiOxOr may be different SiOxI.e. SiO of the first protective layer 3 and the second protective layer 7xX in (2) may be the same or different. Further, SiOxWhere 1.65. ltoreq. x.ltoreq.1.75, alternatively x may be 1.70.
Indium Gallium Zinc Oxide (IGZO) is formed from In2O3、Ga2O3And ZnO is a transparent amorphous oxide semiconductor material formed by radio frequency magnetron sputtering. IGZO is a mixed semiconductor (the forbidden band width is 3.5V) In which a ZnO-based framework is doped with heavy metal elements such as Ga and In, and the ratio of the number of atoms of IGZO materials is generally In: ga: zn is 1:1:1, IGZO has many excellent properties due to the unique electronic structure, for example, the electron mobility of IGZO can reach 10cm2V-1s-1Above, and amorphous silicon tends to be less than 1cm2V-1s-1. IGZO also has the advantage of high transmittance in the visible region, and can be used forIt can be used to prepare transparent display device and flexible circuit. The preparation temperature of IGZO is low, so the production cost is low, and the TFT device prepared by IGZO has higher switching ratio and less subthreshold swing. In one implementation of the present invention, the material of the oxide semiconductor layer 4 is indium gallium zinc oxide. Of course, the material of the oxide semiconductor layer 4 according to the present invention is not limited to indium gallium zinc oxide, and other metal oxides, such as rare earth metal oxide, may be used.
In one implementation of the present invention, the source and drain electrodes (SD layers) 5 each include a titanium metal layer (Ti layer) 501, an aluminum metal layer (Al layer) 502, and a molybdenum metal layer (Mo layer) 503, which are sequentially stacked. Specifically, the source and drain electrodes 5 are a Ti layer 501, an Al layer 502, and a Mo layer 503, which are stacked in this order. That is, a Ti layer 501, an Al layer 502, and a Mo layer 503 are stacked in this order and provided on the oxide semiconductor layer 4. The Al layer 502 is used as a conductive layer, and the Ti layer 501 and the Mo layer 503 are used as functional layers, wherein the Ti layer 501 can play an etching protection role on the oxide semiconductor layer 4 in the preparation process; also, the resistance of Ti and Mo is relatively high compared to Al. Based on this, in the source and drain electrodes 5, the thickness of the Al layer 502 may be greater than the thickness of the Ti layer 501 and the thickness of the Mo layer 503, i.e., the thickness of the Al layer 502 is the largest.
In one implementation of the present invention, the material of the anode pattern layer 6 is an ITO material. ITO (indium Tin oxides) is an N-type oxide semiconductor, i.e., Indium Tin Oxide (ITO), and an ITO thin film layer is a transparent conductive layer of an ITO semiconductor.
In one embodiment of the present invention, the organic material layer 8 is a colored organic material layer 8 or a black organic material layer 8. The colored organic material layer 8 or the black organic material layer 8 can absorb or reflect light with a wavelength less than 470 nanometers, so that the effect of effectively blocking light with a wavelength less than 470 nanometers incident from one side of the organic material layer 8 is achieved, and more oxygen vacancy defects are prevented from being generated in a channel due to illumination of IGZO in the thin film transistor device.
The organic material layer 8 of the present invention can achieve the purpose of blocking light with a wavelength less than 470nm by using a colored organic material. Specifically, the colored organic material of the present invention may be a self-colored organic material (the organic material itself is colored); the colored organic material may also be a colored organic material obtained by doping other colored substances. Wherein, the color refers to non-colorless transparent color.
In one embodiment, the organic material layer 8 includes an organic material doped with a black polymer or a colored dye. Specifically, the black polymer at least comprises a polymer material which can completely absorb light or only reflect non-visible light with the wavelength less than 390 nm; the colored dye at least comprises a dye capable of reflecting visible light with the wavelength less than 470 nm. The organic material layer 8 of the present invention includes an organic material doped with one or more black polymers or colored dyes, and absorbs or reflects light having a wavelength less than 470nm, thereby blocking light having a wavelength less than 470nm incident from one side of the organic material layer 8.
In one implementation of the invention, the colored organic material is an organic material doped with a colored dye. The invention converts the colorless and transparent organic material into the colored organic material or changes the color of the original organic material by doping the colored dye in the organic material. It can be seen that the organic material doped with the colored dye can conveniently change the organic material for obtaining the required color by changing the type and the dosage of the colored dye, and can realize the purpose of blocking light rays in a specific wavelength range.
In one implementation of the present invention, the present invention obtains a black organic material by doping a black organic-based dye in the organic material. The black organic material can block almost all wavelengths of light including light with a wavelength less than 470 nanometers, so that the oxide semiconductor layer 3 of the device is protected, and the stability of the device is improved.
In one implementation mode of the invention, the black organic dye comprises one or two of perylene and polyurethane-based black polymer. The perylene has good light-blocking effect and stable chemical property.
In one implementation mode of the invention, the colored dye is one or more of phthalocyanine dyes and pyrrolopyrrole diketone organic dyes. Experiments show that compared with other organic dyes, the phthalocyanine dye and the pyrrolopyrrole diketone organic dye can effectively block ultraviolet light and most visible light.
In one implementation mode of the present invention, the colored organic material is a non-black colored organic material, and can be specifically prepared by doping the organic material with the above-mentioned colored dye. The non-black colored organic material is only transmissive to infrared light of lower energy, i.e., the non-black colored organic material blocks short wavelength light and most visible light. In other words, the non-black colored organic material can transmit light having a wavelength greater than or equal to 470 nanometers and block light having a wavelength less than 470 nanometers. Compared with a black organic material for blocking almost all light, the non-black colored organic material can realize the function of infrared light alignment while realizing the protection of devices, and is easier to realize the patterning of the organic material.
In one embodiment of the present invention, the organic material is a photoresist material. In other words, the material of the organic material layer may be selected from a photoresist material doped with a black polymer or a colored dye. The main component of the photoresist material can be a composition of polyimide and acrylate monomer or a composition comprising cresol novolac resin and acrylate monomer, and the photoresist material can also be a commercially available photoresist material. Further, the photoresist material is an acrylic negative photoresist material or a non-acrylic positive photoresist material.
In one embodiment of the present invention, the material of the organic material layer 8 may be an acrylic negative photoresist material doped with a coloring dye. As shown in fig. 12, two irradiation experiments (experiments 1 and 2) performed on the acryl-based negative photoresist material doped with the color dye (specifically, the acryl-based negative photoresist material doped with pyrrolopyrroledione, in which the doping amount of the pyrrolopyrroledione is 70%) by using different wavelengths of light, found that the acryl-based negative photoresist material doped with the color dye has a good blocking effect on light with a wavelength less than 650nm, and particularly can almost completely block light with a wavelength less than 550 nm, and has a certain transmittance for light with a wavelength greater than 650 nm. Therefore, the acrylic negative photoresist material doped with the colored dye can filter most of UV light. Meanwhile, long-wave light (such as infrared light) can penetrate through the acrylic negative photoresist material doped with the colored dye, so that the infrared light can be used for positioning in the preparation process.
In addition, as shown in fig. 13, the non-acryl positive type photoresist material doped with the color dye (specifically, the acryl positive type photoresist material doped with pyrrolopyrrole dione, wherein the doping amount of the pyrrolopyrrole dione is 70%) has lower water absorption than polyimide, which is beneficial to improving the performance of the thin film transistor device.
In an embodiment of the invention, when the doping amount of the black polymer or the colored dye in the photoresist material is about 60% to 100%, the light-shielding effect can be effectively achieved, and the oxide semiconductor layer is prevented from generating oxygen vacancy defects. The doping amount of the black polymer or the colored dye in the light resistance material is set according to the requirement of the actual shading effect. Optionally, the doping amount of the black polymer or the colored dye in the photoresist material is 60% to 99%, such as 70%, 80%, or 90%.
It should be noted that the dye of the present invention refers to a colored chemical substance, and is not limited to a conventional chemical dye, and the colored chemical substance can be doped into an organic material to block light with a wavelength of less than 470 nm.
The thickness of the organic material layer 8 in the present invention affects light transmittance, and in one embodiment of the present invention, the thickness of the organic material layer 8 is 1 to 3 μm. For the organic material layer 8 made of the organic material doped with the colored dye, the thickness of the organic material layer 8 is 1-3 μm, so that the shading effect of the oxide semiconductor can be realized, the generation of oxygen vacancy defects can be avoided, infrared light can be ensured to penetrate through the organic material layer 8 with the thickness, and the infrared light can be used for positioning in the preparation process.
The present invention can configure the wavelength range of the light blocked by the corresponding organic material layer 8 according to the oxide used for the oxide semiconductor layer 4. Specifically, the respective organic material layers 8 are configured to specifically block light rays in the wavelength range corresponding to the oxide susceptible to oxygen vacancy defects, based on the difference in the degree of sensitivity of the oxide to oxygen vacancy defects generated by light rays of different wavelengths. In one implementation of the present invention, the wavelength of the light blocked by the organic material layer 8 is between 300 nanometers and 470 nanometers.
The invention also provides a preparation method of the indium gallium zinc thin film transistor device, wherein the preparation method comprises the following steps:
s101, providing a substrate 1;
s102, depositing a first metal layer on the substrate 1, and patterning the first metal layer to form a grid 2;
s103, depositing a first protective layer 3 on the substrate 1 and the grid 2, wherein the first protective layer covers the grid;
s104, depositing an oxide and a second metal layer on the first protective layer 3 in sequence, patterning the second metal layer to form a first patterned second metal layer, and patterning the oxide to form an oxide semiconductor layer 4;
s105, depositing a third metal layer on the second metal layer subjected to the first patterning, and patterning the third metal layer to form a patterned third metal layer;
s106, depositing an anode material on the patterned third metal layer, and patterning the anode material to form an anode pattern layer 6;
s107, carrying out pattern processing on the second metal layer subjected to the first pattern processing again to form a source electrode and a drain electrode 5;
s108, depositing a protective layer material on the source and drain electrodes 5, patterning the protective layer material, and forming a second protective layer 7 on the source and drain electrodes which are not covered by the anode pattern layer 6;
s109, forming an organic material layer 8 on the second protection layer 7, wherein the projection of the organic material layer 8 on the substrate covers the oxide semiconductor layer, and the organic material layer 8 is configured to block light with a wavelength smaller than 470nm incident from one side of the organic material layer 8.
The organic material layer 8 prepared by the invention is configured to block light with a wavelength less than 470nm incident from one side of the organic material layer 8, so that more oxygen vacancy defects can be prevented from being generated in a channel of the oxide semiconductor layer 9 in the thin film transistor device due to irradiation of the light with the wavelength less than 470nm, further threshold voltage negative shift can be effectively prevented, and the stability of the device is further improved.
More specifically, the method for preparing the indium gallium zinc oxide TFT substrate comprises the following steps:
s101, providing a substrate 1;
s102, depositing a first metal layer on the substrate 1, and performing patterning on the first metal layer to form a Gate 21(Gate layer), as shown in fig. 4;
s103, depositing SiO on the grid 2xMaterial, the first protective layer 3 is prepared as shown in FIG. 5, wherein 0<x≤2；
S104, depositing an indium gallium zinc oxide and a Ti layer on the first protective layer 3, patterning the Ti layer to form a Ti layer 501 after the first patterning, and patterning the indium gallium zinc oxide to form an oxide semiconductor layer 4 corresponding to the gate 2, as shown in fig. 6;
s105, continuously depositing an Al layer 502 and a Mo layer 503 on the Ti layer 501 subjected to the first patterning, and performing gluing, exposure, development and etching on the Al layer 502 and the Mo layer 503 to prepare the patterned Al layer 502 and the patterned Mo layer 503, as shown in FIG. 7;
s106, depositing ITO materials on the patterned Al layer 502 and the patterned Mo layer 503, and preparing and forming an anode pattern layer 6 after gluing, exposing, developing and etching, as shown in FIG. 8;
s107, performing patterning again on the Ti layer 501 subjected to the first patterning to leak out the channels above the oxide semiconductor layer, so as to obtain a Ti layer subjected to the second patterning, that is, forming the source and drain 5 composed of the Ti layer 501 subjected to the second patterning, the Al layer 502 subjected to the patterning, and the Mo layer 503, as shown in fig. 9.
S108, depositing SiO on the source electrode 5 and the drain electrode 5xMaterial, to SiOxPatterning the material to form a second passivation layer 7 on the source and drain electrodes 5 uncovered by the anode pattern layer 6, as shown in FIG. 10, wherein 0<x≤2；
S109, depositing a photoresist material doped with a colored dye or a black polymer on the anode pattern layer 6 to form an organic material layer 8, wherein a projection of the organic material layer 8 on the substrate 1 covers the oxide semiconductor layer 4, as shown in fig. 11.
S101 is specifically to deposit a metal conductive material on the substrate 1, sequentially perform processes of glue coating, exposure, development, and etching to form a Gate 2(Gate layer), where the Gate 2 is made of a conductive material with low conductivity, such as copper (Cu), aluminum (Al), molybdenum (Mo), titanium (Ti), and the like. The processes of photoresist coating, exposure, development and etching for patterning are mature processes in the field, and thus are not described again.
In S104 to S107, the second metal layer is a Ti layer 501, and the third metal layer is an Al layer 502 and a Mo layer 503. And continuously settling IGZO/Ti on the first protective layer, and then patterning the Ti layer and the IGZO layer through gluing, exposing, developing and etching processes. Optionally, the Ti layer utilizes etching solution BCl in the process3/Cl2Etching is performed, while IGZO is formed by etching with phosphoric acid, the Al layer 502 and the Mo layer 503 are etched with aluminic acid, and neither phosphoric acid nor aluminic acid can etch the Ti layer. Therefore, the Ti layer in the present invention can protect the oxide semiconductor layer 4 during the etching of the Al layer 502, the Mo layer 503 and the anode material, and prevent the oxide semiconductor layer 4 from being damaged or contaminated during the above processes.
In one implementation of the present invention, the forming process of the organic material layer 8 includes any one of magnetron sputtering, chemical vapor deposition, atomic deposition, spin coating, and inkjet printing processes.
The technical solution of the present invention will be described below by specific examples.
The preparation method of the indium gallium zinc thin film transistor device comprises the following steps:
step 7Depositing SiO on the source and drain electrodes 51.7Material, to SiO1.7Patterning the material to form a second passivation layer 7 on the source and drain electrodes 5 uncovered by the anode pattern layer 6, as shown in fig. 10;
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. A thin film transistor device, comprising:
a substrate;
a gate formed on the substrate;
the first protective layer is formed on the substrate and covers the grid;
an oxide semiconductor layer formed on the first protective layer and disposed corresponding to the gate electrode;
a source electrode and a drain electrode formed on the oxide semiconductor layer;
an anode pattern layer formed on the drain electrode;
the second protective layer is formed on the source electrode and the drain electrode which are not covered by the anode pattern layer;
an organic material layer formed on the second protective layer; the projection of the organic material layer on the substrate covers the oxide semiconductor layer, and the organic material layer is configured to block light with a wavelength less than 470 nanometers from entering from one side of the organic material layer.
2. The thin film transistor device of claim 1, wherein the source and drain electrodes each comprise a titanium metal layer, an aluminum metal layer, and a molybdenum metal layer in a stacked arrangement in that order.
3. The thin film transistor device according to claim 1, wherein a material of the oxide semiconductor layer comprises indium gallium zinc oxide or rare earth metal oxide.
4. The thin film transistor device of claim 1, wherein the organic material layer comprises a photoresist material doped with a black polymer or a colored dye.
5. The thin film transistor device of claim 4, wherein the photoresist material comprises an acrylic negative photoresist material or a non-acrylic positive photoresist material.
6. The thin film transistor device of claim 4, wherein the amount of the black polymer or the colored dye doped in the photoresist material is 60% to 99%.
7. The thin film transistor device of claim 4, wherein the colored dye comprises one or more of a phthalocyanine-based dye, a pyrrolopyrrole-dione-based organic dye.
8. The thin film transistor device of claim 4, wherein the black polymer comprises one or both of a perylene polymer, a polyurethane-based black polymer.
9. The thin film transistor device of claim 1, wherein the organic material layer has a thickness of 1 micron to 3 microns.
10. A method of fabricating a thin film transistor device, comprising:
providing a substrate;
depositing a first metal layer on the substrate, and patterning the first metal layer to form a gate;
depositing a first protective layer on the substrate and the gate, wherein the first protective layer covers the gate;
depositing an oxide and a second metal layer on the first protective layer in sequence, patterning the second metal layer to form a second metal layer subjected to first patterning, and patterning the oxide to form an oxide semiconductor layer;
depositing a third metal layer on the second metal layer subjected to the first patterning treatment, and performing patterning treatment on the third metal layer to form a patterned third metal layer;
depositing an anode material on the patterned third metal layer, and patterning the anode material to form an anode pattern layer;
performing patterning treatment on the second metal layer subjected to the first patterning treatment again to form a source electrode and a drain electrode;
depositing a protective layer material on the source electrode and the drain electrode, carrying out patterning treatment on the protective layer material, and forming a second protective layer on the source electrode and the drain electrode which are not covered by the anode pattern layer;
and forming an organic material layer on the second protective layer, wherein the projection of the organic material layer on the substrate covers the oxide semiconductor layer, and the organic material layer is configured to block light with a wavelength less than 470 nanometers which is emitted from one side of the organic material layer.
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