CN110808276A - OLED display panel, preparation method thereof and OLED display device - Google Patents
OLED display panel, preparation method thereof and OLED display device Download PDFInfo
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- CN110808276A CN110808276A CN201911180287.XA CN201911180287A CN110808276A CN 110808276 A CN110808276 A CN 110808276A CN 201911180287 A CN201911180287 A CN 201911180287A CN 110808276 A CN110808276 A CN 110808276A
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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Abstract
The invention provides an OLED display panel, a preparation method thereof and an OLED display device. The OLED display panel comprises a substrate, a shading metal layer, a buffer layer, a driving circuit layer, an insulating layer, a planarization layer and a light-emitting functional layer. The driving circuit layer comprises a semiconductor layer, and the material of the semiconductor layer is sensitive to light wave irradiation in the wavelength range of 380-520 nanometers; the material of the planarization layer is a material with transmittance of less than 10% under the irradiation of light wave with wavelength range of less than 520 nanometers. According to the invention, the stability of the OLED display panel is improved by changing the transmittance characteristic of the material of the planarization layer, and the material of the planarization layer has a short-wave-band filtering function, so that most short waves cannot penetrate through the planarization layer, thereby reducing the influence of the short waves on other film layers below the planarization layer and improving the reliability of the OLED display panel.
Description
Technical Field
The invention relates to the technical field of display, in particular to an OLED display panel, a preparation method thereof and an OLED display device.
Background
The OLED display panel has display characteristics and quality superior to those of the liquid crystal display panel, such as light weight, thin profile, short response time, low driving voltage, better display color and better display viewing angle. Currently, many Oxide semiconductors, such as IGZO (Indium Gallium Zinc Oxide), are developed in combination with OLED devices.
IGZO materials have been the research focus in the field of thin film transistor technology due to their characteristics of high mobility, high on-state current, low off-state current, and the like, which can be switched on and off rapidly. However, the IGZO material is sensitive to the influence of short wavelength band, because the forbidden bandwidth (about 3.4eV) of IGZO is close to the forbidden bandwidth (higher than 3.1eV) of Ultraviolet (UV) light, IGZO has a good absorption effect on UV light, and the energy easily absorbed by valence band electrons and the like of the IGZO active layer under the irradiation of UV light jumps to the conduction band, so that the threshold voltage of the TFT shifts, and the display effect of the display is unstable, so that after the device is irradiated by short wavelength band, the active layer is induced to generate light leakage current, which affects the characteristics of the TFT, even the threshold voltage Vth of the TFT shifts, which affects the normal operation of the TFT, and the reliability of the OLED display panel deteriorates. Therefore, it is necessary to improve this defect.
Disclosure of Invention
The embodiment of the invention provides an OLED display panel, which is used for solving the technical problem that the reliability of the OLED display panel is poor due to the fact that the adopted IGZO material is sensitive to the influence of short-wave-band irradiation in the OLED display panel in the prior art.
The embodiment of the invention provides an OLED display panel which is divided into a driving circuit area, a light emitting area, a capacitance area and a wiring area. The light emitting area and the capacitance area are located between the driving circuit area and the wiring area, and the light emitting area is connected with the driving circuit area. Wherein the OLED display panel includes: the light-emitting diode comprises a substrate, a light-shielding metal layer, a buffer layer, a driving circuit layer, an insulating layer, a planarization layer and a light-emitting functional layer. The shading metal layer is positioned on the substrate base plate and comprises a first shading metal layer and a second shading metal layer, and the first shading metal layer and the second shading metal layer respectively correspond to the driving circuit area and the capacitor area; the buffer layer is positioned on the substrate base plate and covers the first shading metal layer and the second shading metal layer; the driving circuit layer is positioned on the buffer layer and corresponds to the driving circuit region, the driving circuit layer comprises a semiconductor layer, and the material of the semiconductor layer is sensitive to light wave irradiation in the wavelength range of 380 nm to 520 nm; the insulating layer is positioned on the driving circuit layer; the planarization layer is positioned on the insulating layer; the light emitting functional layer is located on the planarization layer and corresponds to the light emitting area. Wherein, the material of the planarization layer is a material with a transmittance of less than 10% under the irradiation of light waves with a wavelength range of less than 520 nanometers.
Furthermore, the material of the semiconductor layer is indium gallium zinc oxide.
Further, the material of the planarization layer is polyimide.
Further, the driving circuit layer further comprises a gate insulating layer located on the semiconductor layer, a gate located on the gate insulating layer, an interlayer insulating layer located on the gate, and a source and a drain located on the interlayer insulating layer, wherein the source and the drain are connected with two ends of the semiconductor layer through a first hole and a second hole respectively.
Further, the source is connected to the first light-shielding metal layer through a third hole.
Further, a capacitor area of the OLED display panel is provided with a storage capacitor, a first substrate of the storage capacitor and the gate electrode are fabricated on the same layer, and a second substrate of the storage capacitor and the source electrode or the drain electrode are fabricated on the same layer.
Furthermore, the wiring area of the OLED display panel is provided with scanning lines and data lines, the scanning lines and the gate electrodes are fabricated on the same layer, and the data lines and the source electrodes or the drain electrodes are fabricated on the same layer.
Further, the light-emitting function layer comprises a pixel electrode, a pixel defining layer positioned on the pixel electrode, an organic light-emitting layer positioned in a pixel area of the pixel defining layer, and a common electrode positioned on the pixel defining layer and the organic light-emitting layer, wherein the width of the organic light-emitting layer corresponds to the width of the light-emitting area.
The embodiment of the invention provides a preparation method of an OLED display panel, which comprises the following steps: providing a substrate base plate; preparing a shading metal layer on the substrate, wherein the shading metal layer comprises a first shading metal layer and a second shading metal layer; preparing a buffer layer on the substrate, wherein the buffer layer covers the first shading metal layer and the second shading metal layer; preparing a driving circuit layer on the buffer layer, wherein the driving circuit layer comprises a semiconductor layer, and the material of the semiconductor layer is sensitive to light wave irradiation in the wavelength range of 380-520 nm; preparing an insulating layer on the driving circuit layer; preparing a planarization layer on the insulating layer, wherein the material of the planarization layer is a material with transmittance of less than 10% under the irradiation of light waves with the wavelength range of less than 520 nanometers; and preparing a light-emitting functional layer on the planarization layer.
An embodiment of the present invention provides an OLED display device, including: the OLED display panel, the color film substrate arranged on the OLED display panel and the cover plate arranged on the color film substrate are arranged on the OLED display panel.
Has the advantages that: according to the OLED display panel provided by the embodiment of the invention, the stability of the OLED display panel is improved by changing the transmittance characteristic of the material of the planarization layer, the transmittance of the material of the planarization layer is less than 10% under the irradiation of light waves below 520 nanometers, namely, the material of the planarization layer has a short-wave-band filtering function, most short waves cannot penetrate through the planarization layer, so that the influence of the short waves on other film layers below the planarization layer is reduced, and the reliability of the OLED display panel is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an OLED display panel according to an embodiment of the present invention.
Fig. 2 is a graph showing the relationship between the wavelength of the irradiation light wave of the planarization layer material and the transmittance of the planarization layer material according to the embodiment of the present invention.
Fig. 3 is a flowchart of a method for manufacturing an OLED display panel according to an embodiment of the present invention.
Fig. 4a to 4c are flow charts of processes for manufacturing an OLED display panel according to an embodiment of the present invention.
Fig. 5 is a schematic structural diagram of an OLED display device according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1, a schematic structural diagram of an OLED display panel according to an embodiment of the present invention can be seen from the figure that components of the OLED display panel and relative position relationships between the components are very intuitive, and the OLED display panel is divided into a driving circuit region, a light emitting region, a capacitance region, and a wiring region; the light emitting area and the capacitance area are located between the driving circuit area and the wiring area, and the light emitting area is connected with the driving circuit area. Wherein the OLED display panel includes: a base substrate 101, a light-shielding metal layer, a buffer layer 104, a driver circuit layer 105, an insulating layer 106, a planarization layer 107, and a light-emitting functional layer 108. The light-shielding metal layer is located on the substrate 101 and includes a first light-shielding metal layer 102 and a second light-shielding metal layer 103, and the first light-shielding metal layer 102 and the second light-shielding metal layer 103 correspond to the driving circuit area and the capacitor area, respectively; the buffer layer 104 is located on the substrate base plate 101 and covers the first light-shielding metal layer 102 and the second light-shielding metal layer 103; the driving circuit layer 105 is located on the buffer layer 104 and corresponds to the driving circuit region, the driving circuit layer 105 includes a semiconductor layer 1051, and the material of the semiconductor layer 1051 is a material sensitive to light wave irradiation in a wavelength range of 380 nm to 520 nm; the insulating layer 106 is located on the driving circuit layer 105; the planarization layer 107 is located on the insulating layer 106; the light emitting function layer 108 is located on the planarization layer 107 and corresponds to the light emitting region. The material of the planarization layer 107 is a material with a transmittance of less than 10% under the irradiation of light wave with a wavelength range of less than 520 nm.
The reason why the material transmittance of the planarization layer is low may be that the material itself has a strong absorption effect and can absorb more short-wave energy; the reflection effect of the material is strong, a large amount of short waves can be reflected, the transmittance meets the requirement, the material of the semiconductor layer is protected, the influence of short wave irradiation is weakened, the stability of the TFT device is improved, and the reliability of the OLED display panel is improved.
In one embodiment, the base substrate 101 may be formed of an insulating material such as a transparent plastic or a polymer film. The first light-shielding metal layer 102 and the second light-shielding metal layer 103 may be molybdenum or other metals. The buffer layer 104 may protect a thin film transistor formed in a subsequent process from impurities such as alkali ions leaked from the substrate base plate 101.
In one embodiment, the driving circuit layer 105 further includes a gate insulating layer 1052 on the semiconductor layer 1051, a gate electrode 1053 on the gate insulating layer 1052, an interlayer insulating layer 1054 on the gate electrode 1053, and a source electrode 1055 and a drain electrode 1056 on the interlayer insulating layer 1054, and the source electrode 1055 and the drain electrode 1056 are connected to both ends of the semiconductor layer 1051 through the first hole 109 and the second hole 110, respectively. Wherein the semiconductor layer 1051 is disposed on the buffer layer 104, the material of the semiconductor layer 1051 is a material sensitive to short-wave (light wave with a wavelength range of 380 nm to 520 nm), such as an oxide semiconductor or an organic semiconductor, and in one embodiment, the material of the semiconductor layer 1051 is indium gallium zinc oxide. The gate insulating layer 1052 may be formed of a silicon nitride film or a silicon oxide film. The interlayer insulating layer 1054 may be formed of a silicon nitride film or a silicon oxide film. In this embodiment, the gate electrode 1053, the source electrode 1055, and the drain electrode 1056 form three terminals of a thin film transistor.
In one embodiment, the source 1055 is coupled to the first blackout metal layer 102 through a third aperture 111. The first light-shielding metal layer 102 and the source 1055 are both located in the driving circuit region and are both made of metal, and if the source 1055 is not connected to the first light-shielding metal layer 102, when the TFT device operates, a voltage is generated at the source 1055 end, which may form a capacitor with the first light-shielding metal layer 102, thereby affecting the device performance. The source 1055 and the first light-shielding metal layer 102 are connected, and zero potential is always kept between the source 1055 and the first light-shielding metal layer 102, so that the influence on the device is small.
In one embodiment, the insulating layer 106 is disposed on the driving circuit layer 105, and specifically, in this embodiment, the insulating layer 106 is disposed on the interlayer insulating layer 1054, the source 1055, and the drain 1056.
In one embodiment, the planarization layer 107 is disposed on the insulating layer 106, and the material of the planarization layer 107 is a material with a transmittance of less than 10% under irradiation of light wave with a wavelength range of less than 520 nm, such as an organic material like polyimide, or an inorganic material like silicon, a base film material, or other systems.
In one embodiment, the light emitting function layer 108 includes a pixel electrode 1081, a pixel defining layer 1082 on the pixel electrode 1081, an organic light emitting layer 1083 on a pixel region of the pixel defining layer 1082, and a common electrode 1084 on the pixel defining layer 1082 and the organic light emitting layer 1083, and a width of the organic light emitting layer 1083 corresponds to a width of the light emitting region. The pixel electrode 1081 is connected to the driving circuit layer 105 by drilling the planarization layer 107 and the insulating layer 106, wherein the pixel electrode 1081 is electrically connected to the source electrode 1055, and a voltage signal is transmitted to the pixel electrode 1081 by controlling whether the source electrode 1055 and the drain electrode 1056 of the thin film transistor are turned on or off.
In one embodiment, the pixel electrode 1081 can be made of one or more of silver, molybdenum, aluminum, titanium, copper, or any metal or indium tin oxide.
In one embodiment, the pixel defining layer 1082 is formed on the pixel electrode 1081 and the planarization layer 107, and the material of the pixel defining layer 1082 may be a hydrophobic material. The pixel definition layer 1082 defines a plurality of pixel regions, and specifically, the pixel definition layer 1082 includes a plurality of horizontal pixel definition portions extending along an X-axis direction and a plurality of vertical pixel definition portions extending along a Y-axis direction, and the horizontal pixel definition portions and the vertical pixel definition portions intersect to form a plurality of pixel regions.
In one embodiment, the organic light emitting layer 1083 may include a hole injection layer, a hole transport layer, a light emitting material layer, an electron transport layer, an electron injection layer, and the like.
In one embodiment, the capacitor region of the OLED display panel is provided with a storage capacitor, the first substrate 113 of the storage capacitor is fabricated at the same layer as the gate electrode 1053, and the second substrate 114 of the storage capacitor is fabricated at the same layer as the source electrode 1055 or the drain electrode 1056. Wherein the first substrate 113 is disposed on a first insulating layer 112, the first insulating layer 112 is disposed on the buffer layer 104, and in one embodiment, the first insulating layer 112 and the gate insulating layer 1052 are fabricated at the same layer.
In one embodiment, the routing area of the OLED display panel is provided with a scan line 116 and a data line 117, the scan line 116 is fabricated at the same layer as the gate electrode 1053, and the data line 117 is fabricated at the same layer as the source electrode 1055 or the drain electrode 1056. Wherein the scan line 116 is disposed on the second insulating layer 115, the second insulating layer 115 is disposed on the buffer layer 104, and in one embodiment, the second insulating layer 115 is formed on the same layer as the gate insulating layer 1052.
As shown in fig. 2, a graph of the relationship between the wavelength of the irradiation light wave and the transmittance of the planarization layer material provided by the embodiment of the present invention can be seen from the graph, which is directly visualized, the relationship between the transmittance and the wavelength of the irradiation light wave of the planarization layer material provided by the embodiment of the present invention and the comparison between the planarization layer material provided by the embodiment of the present invention and the planarization layer material of the prior art. In the prior art, when the wavelength of the planarization layer material is less than 350 nanometers, the transmittance is less than 10%, and the transmittance is increased along with the increase of the wavelength, so that a large amount of short waves penetrate through the planarization layer, the performance of the semiconductor material is influenced, and the reliability of the OLED display panel is reduced; the planarization layer material provided by the embodiment of the invention has the transmittance of less than 10% under the irradiation of light waves with the wavelength range of less than 520 nanometers, has a short-wave-band filtering function, and can ensure that most short waves cannot penetrate through the planarization layer, so that the influence of the short waves on other film layers below the planarization layer is reduced, and the reliability of the OLED display panel is improved.
In one embodiment, the planarization layer material may be an organic material such as polyimide, or other systems of inorganic materials such as silicon, base film material, etc.
As shown in fig. 3, a flowchart of a method for manufacturing an OLED display panel according to an embodiment of the present invention includes:
s301, providing a substrate base plate;
s302, preparing a shading metal layer on the substrate, wherein the shading metal layer comprises a first shading metal layer and a second shading metal layer;
s303, preparing a buffer layer on the substrate, wherein the buffer layer covers the first shading metal layer and the second shading metal layer;
s304, preparing a driving circuit layer on the buffer layer, wherein the driving circuit layer comprises a semiconductor layer, and the material of the semiconductor layer is sensitive to light wave irradiation in a wavelength range of 380 nm to 520 nm;
s305, preparing an insulating layer on the driving circuit layer;
s306, preparing a planarization layer on the insulating layer, wherein the material of the planarization layer is a material with the transmittance of less than 10% under the irradiation of light waves with the wavelength range of less than 520 nanometers;
s307, preparing a light-emitting functional layer on the planarization layer.
In S304, the step of preparing the driving circuit layer on the buffer layer specifically includes: preparing a semiconductor layer on the buffer layer; preparing a gate insulating layer on the semiconductor layer; preparing a gate electrode on the gate insulating layer; preparing an interlayer insulating layer on the buffer layer, wherein the interlayer insulating layer covers the grid electrode and the semiconductor layer; digging two holes in the interlayer insulating layer, and preparing a source electrode and a drain electrode on the interlayer insulating layer, wherein the source electrode and the drain electrode are respectively connected with two ends of the semiconductor layer through a first hole and a second hole; and digging holes in the interlayer insulating layer and the buffer layer, wherein the source level is connected with the first shading metal layer through a third hole.
In S307, the step of preparing the light-emitting functional layer on the planarization layer specifically includes: digging holes in the insulating layer and the planarization layer, and preparing a pixel electrode on the planarization layer, wherein the pixel electrode is connected with the driving circuit layer through a fourth hole; preparing a pixel defining layer on the pixel electrode; preparing an organic light emitting layer in a pixel region of the pixel defining layer; and preparing a common electrode on the pixel defining layer and the organic light emitting layer.
As shown in fig. 4a to 4c, a process flow diagram for manufacturing an OLED display panel according to an embodiment of the present invention provides a substrate 401, where the substrate 401 may be formed of an insulating material such as a transparent plastic or a polymer film, first, a first light-shielding metal layer 402, a second light-shielding metal layer 403, and a buffer layer 404 are prepared on the substrate 401, the buffer layer 404 covers the first light-shielding metal layer 402 and the second light-shielding metal layer 403, and the buffer layer 404 may protect TFTs formed in a subsequent process from being contaminated by impurities such as alkali ions leaked from the substrate; then, a driving circuit layer 405 is prepared on the buffer layer 404, specifically, the method includes preparing a semiconductor layer 4051 on the buffer layer 404, where the material of the semiconductor layer 4051 is a material sensitive to short-wave (light wave with a wavelength range of 380 nm to 520 nm) irradiation, such as an oxide semiconductor or an organic semiconductor, and in an embodiment, the material of the semiconductor layer 4051 is indium gallium zinc oxide; a gate insulating layer 4052 is formed over the semiconductor layer 4051, and the gate insulating layer 4052 may be formed of a silicon nitride film or a silicon oxide film; preparing a gate electrode 4053 over the gate insulating layer 4052; an interlayer insulating layer 4054 is formed over the gate electrode 4053, the semiconductor layer 4051, and the buffer layer 404, and the interlayer insulating layer 4054 may be formed of a silicon nitride film or a silicon oxide film; preparing a source electrode 4055 and a drain electrode 4056 over the interlayer insulating layer 4054, wherein the source electrode 4055 and the drain electrode 4056 are electrically connected to both ends of the semiconductor layer 4051 through a first hole 406 and a second hole 407, respectively, the source electrode is electrically connected to the first light-shielding metal layer 402 through a third hole 408, and the gate electrode 4053, the source electrode 4055, and the drain electrode 4056 form three ends of a thin film transistor; an insulating layer 409 is prepared on the interlayer insulating layer 4054, and the insulating layer 409 covers the source 4055 and the drain 4056.
The method further includes preparing a storage capacitor in a capacitor region of the OLED display panel, wherein a first substrate 411 of the storage capacitor and the gate 4053 are prepared in the same layer, and a second substrate 412 of the storage capacitor and the source 4055 or the drain 4056 are prepared in the same layer, wherein the first substrate 411 is disposed on a first insulating layer 410, the first insulating layer 410 is disposed on the buffer layer 404, and in one embodiment, the first insulating layer 410 and the gate insulating layer 4052 are prepared in the same layer; and preparing a scanning line 414 and a data line 415 in a wiring area of the OLED display panel, wherein the scanning line 414 is prepared in the same layer as the gate 4053, and the data line 415 is prepared in the same layer as the source 4055 or the drain 4056. The scan line 414 is disposed on the second insulating layer 413, the second insulating layer 413 is disposed on the buffer layer 404, and in one embodiment, the second insulating layer 413 and the gate insulating layer 4052 are fabricated on the same layer.
Next, a planarization layer 416 is formed on the insulating layer 409 by a chemical vapor deposition method or other methods, and the material of the planarization layer 416 is a material with a transmittance of less than 10% under irradiation of light wave with a wavelength range of less than 520 nm, such as an organic material like polyimide, or an inorganic material like silicon, a base film material, etc.
Then, a pixel electrode 417 is prepared on the planarization layer 416, the material of the pixel electrode 417 is ito/ag/ito, the planarization layer 416 and the insulating layer 409 are hollowed, and the pixel electrode 417 is electrically connected to the source electrode 4055.
Next, a pixel defining layer 418 is prepared on the pixel electrode 417 and the planarization layer 416, the pixel defining layer 418 may be a negative photoresist or a bank, the pixel defining layer 418 may be a hydrophobic material, the pixel defining layer 418 defines a plurality of pixel regions, and specifically, the pixel defining layer 418 includes a plurality of lateral pixel defining portions extending along the X-axis direction and a plurality of longitudinal pixel defining portions extending along the Y-axis direction, and the lateral pixel defining portions and the longitudinal pixel defining portions intersect to define a plurality of pixel regions.
Finally, an organic light emitting layer 419 and a common electrode 420 are prepared, the organic light emitting layer 419 being prepared in the pixel region of the pixel defining layer 418, the width of the organic light emitting layer 419 corresponding to the width of the light emitting region; the common electrode 420 is prepared on the organic light emitting layer 419 and the pixel defining layer 418.
As shown in fig. 5, a schematic structural diagram of an OLED display device according to an embodiment of the present invention includes the OLED display panel 501, a color film substrate 502 disposed on the OLED display panel 501, and a cover plate 503 disposed on the color film substrate 502.
The color filter substrate 502 includes a black matrix 5022, a color resist layer 5021 (including a red color resist, a green color resist, and a blue color resist), and a protective layer 5023.
In summary, according to the OLED display panel provided in the embodiments of the present invention, the transmittance of the material of the planarization layer is less than 10% under the irradiation of light waves below 520 nm, that is, the material of the planarization layer has a short-wavelength filtering function, so that most of the short waves cannot penetrate through the planarization layer, thereby reducing the influence of the short waves on other film layers below the planarization layer, improving the reliability of the OLED display panel, and solving the technical problem that the reliability of the OLED display panel is poor due to the sensitivity of the adopted IGZO material on the influence of the short-wavelength irradiation in the OLED display panel in the prior art.
The OLED display panel, the manufacturing method thereof, and the OLED display device provided in the embodiments of the present invention are described in detail above. It should be understood that the exemplary embodiments described herein should be considered merely illustrative for facilitating understanding of the method of the present invention and its core ideas, and not restrictive.
Claims (10)
1. The OLED display panel is characterized by being divided into a driving circuit area, a light emitting area, a capacitance area and a wiring area; the light emitting area and the capacitance area are positioned between the driving circuit area and the wiring area, and the light emitting area is connected with the driving circuit area; wherein the OLED display panel includes:
a substrate base plate;
a shading metal layer located on the substrate and including a first shading metal layer and a second shading metal layer, wherein the first shading metal layer and the second shading metal layer respectively correspond to the driving circuit region and the capacitor region;
a buffer layer on the substrate and covering the first light-shielding metal layer and the second light-shielding metal layer;
the driving circuit layer is positioned on the buffer layer and corresponds to the driving circuit region, the driving circuit layer comprises a semiconductor layer, and the material of the semiconductor layer is sensitive to light wave irradiation in the wavelength range of 380 nm to 520 nm;
the insulating layer is positioned on the driving circuit layer;
a planarization layer on the insulating layer;
a light emitting functional layer on the planarization layer and corresponding to the light emitting region;
wherein, the material of the planarization layer is a material with a transmittance of less than 10% under the irradiation of light waves with a wavelength range of less than 520 nanometers.
2. The OLED display panel of claim 1, wherein the material of the semiconductor layer is indium gallium zinc oxide.
3. The OLED display panel of claim 1, wherein the material of the planarization layer is polyimide.
4. The OLED display panel of claim 1, wherein the driving circuit layer further includes a gate insulating layer on the semiconductor layer, a gate electrode on the gate insulating layer, an interlayer insulating layer on the gate electrode, and a source electrode and a drain electrode on the interlayer insulating layer, the source electrode and the drain electrode being connected to both ends of the semiconductor layer through a first hole and a second hole, respectively.
5. The OLED display panel of claim 4, wherein the source stage is connected to the first light shielding metal layer through a third hole.
6. The OLED display panel of claim 4, wherein the capacitor region of the OLED display panel is provided with a storage capacitor, a first substrate of the storage capacitor is fabricated at the same layer as the gate electrode, and a second substrate of the storage capacitor is fabricated at the same layer as the source electrode or the drain electrode.
7. The OLED display panel of claim 4, wherein the routing area of the OLED display panel is provided with scan lines and data lines, the scan lines are fabricated on the same layer as the gate electrodes, and the data lines are fabricated on the same layer as the source electrodes or the drain electrodes.
8. The OLED display panel of claim 1, wherein the light emitting function layer includes a pixel electrode, a pixel defining layer on the pixel electrode, an organic light emitting layer in a pixel region of the pixel defining layer, and a common electrode on the pixel defining layer and the organic light emitting layer, and a width of the organic light emitting layer corresponds to a width of the light emitting region.
9. A preparation method of an OLED display panel is characterized by comprising the following steps:
providing a substrate base plate;
preparing a shading metal layer on the substrate, wherein the shading metal layer comprises a first shading metal layer and a second shading metal layer;
preparing a buffer layer on the substrate, wherein the buffer layer covers the first shading metal layer and the second shading metal layer;
preparing a driving circuit layer on the buffer layer, wherein the driving circuit layer comprises a semiconductor layer, and the material of the semiconductor layer is sensitive to light wave irradiation in the wavelength range of 380-520 nm;
preparing an insulating layer on the driving circuit layer;
preparing a planarization layer on the insulating layer, wherein the material of the planarization layer is a material with transmittance of less than 10% under the irradiation of light waves with the wavelength range of less than 520 nanometers;
and preparing a light-emitting functional layer on the planarization layer.
10. An OLED display device, comprising:
the OLED display panel of any one of claims 1 to 8;
the color film substrate is arranged on the OLED display panel; and
and the cover plate is arranged on the color film substrate.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN113224120A (en) * | 2021-04-29 | 2021-08-06 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
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Application publication date: 20200218 |