CN113451351B - Micro light emitting display device - Google Patents
Micro light emitting display device Download PDFInfo
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- CN113451351B CN113451351B CN202110830698.XA CN202110830698A CN113451351B CN 113451351 B CN113451351 B CN 113451351B CN 202110830698 A CN202110830698 A CN 202110830698A CN 113451351 B CN113451351 B CN 113451351B
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- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000000605 extraction Methods 0.000 claims description 29
- 230000003247 decreasing effect Effects 0.000 claims description 4
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 21
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention provides a micro light emitting display device having a plurality of display areas. The micro light emitting display device includes a substrate, a plurality of micro light emitting elements, and a plurality of first light emitting auxiliary structures. The micro light emitting elements are arranged on the substrate, and the positions of the micro light emitting elements define the range of the display areas, wherein the micro light emitting elements have the same first pitch in any display area. These micro light emitting elements have a second pitch between boundaries across any two adjacent display areas. The first pitch is different from the second pitch. The first light-emitting auxiliary structures are respectively arranged on the micro light-emitting elements. The first light-emitting auxiliary structures have the same third pitch.
Description
Technical Field
The present invention relates to a micro light emitting display device.
Background
The current mass transfer technology of display devices formed by Micro light emitting diodes (Micro Light Emitting Diode, micro LEDs) cannot manufacture a large area on a display area at a time, and the large transfer technology is to splice the display devices by using a small-area and multiple transfer mode. However, the multiple transfer method also causes a phenomenon of easily having a stitching line after the display device is turned on, and the phenomenon may be caused by chip offset or brightness difference between different display areas, so that a group offset is caused, and a stitching line is easily generated.
Disclosure of Invention
The present invention is directed to a micro light emitting display device capable of reducing a stitching phenomenon.
An embodiment of the present invention provides a micro light emitting display device having a plurality of display areas. The micro light emitting display device includes a substrate, a plurality of micro light emitting elements, and a plurality of first light emitting auxiliary structures. The micro light emitting elements are arranged on the substrate, and the positions of the micro light emitting elements define the range of the display areas, wherein the micro light emitting elements have the same first pitch in any display area. These micro light emitting elements have a second pitch between boundaries across any two adjacent display areas. The first pitch is different from the second pitch. The first light-emitting auxiliary structures are respectively arranged on the micro light-emitting elements. The first light-emitting auxiliary structures have the same third pitch.
In an embodiment of the present invention, the first pitch is the same as the third pitch.
In an embodiment of the invention, the first light-emitting auxiliary structures have a plurality of different areas.
In an embodiment of the invention, the micro light emitting devices have a plurality of different light emitting areas, and the light emitting auxiliary structures have the same area.
In an embodiment of the invention, the first light-emitting auxiliary structures are light-guiding structures, and a refractive index of the first light-emitting auxiliary structures is greater than 1 and smaller than a refractive index of the micro light-emitting elements.
In an embodiment of the present invention, in any two adjacent display areas, the minimum distances between the edges of the first light emitting auxiliary structures and the edges of the micro light emitting elements are different from each other.
In an embodiment of the invention, the first light-emitting auxiliary structures are reflective layers or absorptive layers, and each have a light-emitting opening.
In an embodiment of the invention, the light emitting openings of the first light emitting auxiliary structures have the same third pitch.
In an embodiment of the invention, the projection of the micro light emitting devices on the substrate completely covers the projection of the light emitting openings of the first light emitting auxiliary structures on the substrate.
In an embodiment of the present invention, in any two adjacent display areas, the minimum thicknesses between the edges of the first light-emitting auxiliary structures and the light-emitting openings are different from each other.
In an embodiment of the invention, the micro light emitting display device further includes a plurality of second light emitting auxiliary structures. The second light-emitting auxiliary structures are respectively arranged in the light-emitting openings of the first light-emitting auxiliary structures. The second light-emitting auxiliary structures have the same fourth pitch, and the fourth pitch is the same as the third pitch.
In an embodiment of the invention, the second light-emitting auxiliary structures are light-guiding structures, and a refractive index of the second light-emitting auxiliary structures is greater than 1 and smaller than a refractive index of the micro light-emitting elements.
In an embodiment of the invention, a portion of the second light-emitting auxiliary structures is disposed on a surface of the first light-emitting auxiliary structures opposite to the micro light-emitting elements.
In an embodiment of the invention, the first light-emitting auxiliary structures are connected to each other, and the first light-emitting auxiliary structures are disposed in the space between the micro light-emitting elements.
In an embodiment of the present invention, the micro light emitting display device further includes a light transmitting layer. The light-transmitting layer is arranged between the first light-emitting auxiliary structures and the micro light-emitting elements, and the light-transmitting layer is arranged in the space between the micro light-emitting elements.
An embodiment of the present invention provides a micro light emitting display device having a plurality of display areas. The micro light emitting display device includes a substrate, a plurality of micro light emitting elements, and a plurality of light emitting auxiliary structures. The micro light emitting elements are arranged on the substrate, and the positions of the micro light emitting elements define the range of the display areas, wherein the micro light emitting elements have the same first pitch in any display area, and the micro light emitting elements have the second pitch between boundaries crossing any two adjacent display areas. The first pitch is different from the second pitch. The light-emitting auxiliary structures are respectively arranged on the micro light-emitting elements. The light-emitting auxiliary structures are reflection layers or absorption layers and are respectively provided with light-emitting openings. The area of the light-emitting openings of the light-emitting auxiliary structures is gradually increased or gradually decreased at the boundary crossing any two adjacent display areas.
In an embodiment of the invention, an area ratio between the light emitting openings of the light emitting auxiliary structures falls within a range of 0.8 to 1.2.
Based on the above, in the micro light emitting display device according to an embodiment of the present invention, since the light emitting auxiliary structures have the same pitch, the light emitting effective area is redefined, thereby reducing the phenomenon of the existence of the stitching line between the display areas.
Drawings
FIG. 1A is a schematic top view of a micro light emitting display device according to a first embodiment of the present invention;
FIG. 1B is a schematic side view of the micro light emitting display device of FIG. 1A;
fig. 2 is a schematic side view of a micro light emitting display device according to a second embodiment of the present invention;
FIG. 3A is a schematic top view of a micro light emitting display device according to a third embodiment of the present invention;
FIG. 3B is a schematic side view of a micro light emitting display device according to a third embodiment of the present invention;
fig. 4A is a schematic top view of a micro light emitting display device according to a fourth embodiment of the present invention;
FIG. 4B is a schematic side view of the micro light emitting display device of FIG. 4A;
fig. 5 is a schematic side view of a micro light emitting display device according to a fifth embodiment of the present invention;
fig. 6 is a schematic side view of a micro light emitting display device according to a sixth embodiment of the present invention;
fig. 7A is a schematic top view of a micro light emitting display device according to a seventh embodiment of the present invention;
FIG. 7B is a schematic side view of the micro light emitting display device of FIG. 7A;
fig. 8A is a schematic top view of a micro light emitting display device according to an eighth embodiment of the present invention;
FIG. 8B is a schematic side view of the micro light emitting display device of FIG. 8A;
fig. 9 is a schematic side view of a micro light emitting display device according to a ninth embodiment of the present invention.
Detailed Description
Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.
Fig. 1A is a schematic top view of a micro light emitting display device according to a first embodiment of the present invention. Fig. 1B is a schematic side view of the micro light emitting display device of fig. 1A. For convenience of description, each drawing in the specification simply illustrates two display regions R1, R2, but the number of display regions R1, R2 that the micro light emitting display device 10 may have should be determined according to actual production conditions. Further, the number of micro light emitting elements 200 in each of the display regions R1, R2 is simply illustrated as 3×3. For example, the area of each display region R1, R2 falls within the range of about 20X 20 to 30X 30mm 2 . Therefore, the number of micro light emitting elements 200 in the display regions R1, R2 is on the order of more than 10 3 。
Referring to fig. 1A and fig. 1B, an embodiment of the invention provides a micro light emitting display device 10 having a plurality of display regions R1 and R2. The micro light emitting display device 10 includes a substrate 100, a plurality of micro light emitting elements 200, and a plurality of first light extraction auxiliary structures 300. The substrate 100 is, for example, a Thin Film Transistor (TFT), a printed circuit board (Printed circuit board, PCB), a flexible printed circuit board (Flexible Print Circuit, FPC), or other types of wiring substrates. The Micro light emitting element 200 may be a Micro light emitting diode (Micro Light Emitting Diode, micro LED), a sub-millimeter light emitting diode (Mini Light Emitting Diode, mini LED), or other type of Micro light emitting element. The micro light emitting device 200 is electrically contacted with the substrate 100 through the connection between the bonding pad 202 of the micro light emitting device 200 and the bonding pad 102 of the substrate 100.
In the present embodiment, the micro light emitting element 200 is disposed on the substrate 100, and the positions of the micro light emitting element 200 define the range of the display regions R1, R2. In detail, the micro light emitting devices 200 have the same first Pitch (Pitch) P1 in any one of the display regions R1 and R2. However, the micro light emitting element 200 has a second pitch P2 between boundaries across any two adjacent display regions R1, R2. The first pitch P1 is different from the second pitch P2. Therefore, the micro light emitting device 200 is visually distributed such that a splice line exists at the boundary between the display regions R1 and R2.
To solve the above-mentioned splice lines, in the present embodiment, the first light-emitting auxiliary structures 300 are respectively disposed on the micro light-emitting elements 200. The first light extraction auxiliary structures 300 have the same third pitch P3 therebetween. Wherein the first light extraction auxiliary structure 300 is configured such that the first pitch P1 is the same as the third pitch P3. That is, as shown in the top view of fig. 1A, the first light-emitting auxiliary structures 300 have the same pitch, so that the phenomenon that the junction between the display regions R1 and R2 has a splice line is slowed down.
In the present embodiment, the third pitch P3 is 1 μm or less. In one embodiment, the third pitch P3 is less than or equal to 500 μm, which can provide better display effect.
In the present embodiment, the first light-emitting auxiliary structure 300 may be a light-guiding structure, and the refractive index of the first light-emitting auxiliary structure 300 is greater than 1 and smaller than that of the micro light-emitting device 200. This refractive index difference contributes to an improvement in the light extraction efficiency of each micro light emitting element 200. The light guiding structure may be made of inorganic material, such as silicon dioxide or silicon nitride, which can enhance the light guiding effect and can withstand the high temperature and high pressure in the process to protect the surface of the micro light emitting device 200. The proportion of the first light-emitting auxiliary structure 300 to the surface 204 of the micro light-emitting element 200 is at least 0.5 or more, which can provide better light guiding efficiency.
In addition, in the present embodiment, in any two adjacent display regions R1 and R2, the minimum distances d1 and d2 between the edge of the first light extraction auxiliary structure 300 and the edge of the micro light emitting element 200 are different from each other, and the light extraction type can be controlled.
Based on the above, in the micro light emitting display device 10 according to an embodiment of the present invention, since the light emitting auxiliary structures 300 are disposed on the micro light emitting element 200 and the light emitting auxiliary structures 300 have the same pitch, the light emitting effective area is redefined, so that the phenomenon of the existence of the splice line between the display regions R1 and R2 is slowed down.
Fig. 2 is a schematic side view of a micro light emitting display device according to a second embodiment of the present invention. Referring to fig. 2, the micro light emitting display device 10A is substantially the same as the micro light emitting display device 10 of fig. 1B, with the following main differences. In the present embodiment, the first light-emitting auxiliary structures 300A-1, 300A-2, 300A-3 have a plurality of different areas. Fig. 2 illustrates that the area of the light-extraction assisting structure 300A-1 is larger than the area of the light-extraction assisting structures 300A-2, 300A-3, and the area of the light-extraction assisting structure 300A-2 is equal to the area of the light-extraction assisting structure 300A-3. For example, the light-emitting auxiliary structures 300A-1, 300A-2 and 300A-3 are disposed on the red, green and blue micro-light emitting devices 200, respectively. Generally, the light emitting efficiency of red light emitting diodes is lower than that of green and blue light emitting diodes. Therefore, the first light-emitting auxiliary structures 300A-1, 300A-2, 300A-3 are designed to have a plurality of different areas, for example, the light-emitting auxiliary structures 300A-1 corresponding to the red light micro light-emitting elements 200 are larger than the first light-emitting auxiliary structures 300A-2, 300A-3 corresponding to the green light and blue light micro light-emitting elements 200, which helps to make the brightness of each color light of the micro light-emitting display device 10A more uniform.
Fig. 3A is a schematic top view of a micro light emitting display device according to a third embodiment of the present invention. Fig. 3B is a schematic side view of a micro light emitting display device according to a third embodiment of the present invention. Referring to fig. 3A and 3B, the micro light emitting display device 10B is substantially the same as the micro light emitting display device 10 of fig. 1B, and the main differences are as follows. In the present embodiment, the micro light emitting devices 200B-1, 200B-2, 200B-3 have a plurality of different light emitting areas, but the light emitting auxiliary structures 300 respectively corresponding to the micro light emitting devices have the same area. FIG. 3B illustrates that the size of the micro light emitting element 200B-1 is larger than the sizes of the micro light emitting elements 200B-2, 200B-3, and the size of the micro light emitting element 200B-2 is equal to the size of the micro light emitting element 200B-3. For example, the micro light emitting devices 200B-1, 200B-2 and 200B-3 may be red light emitting diodes, green light emitting diodes and blue light emitting diodes, or may be light emitting diodes with the same color, and the dimensions thereof are different due to the process, and the dimensions thereof reflect the area of the light emitting layers 206-1, 206-2 and 206-3. Therefore, the light-emitting auxiliary structures 300 on the micro light-emitting elements 200B-1, 200B-2, 200B-3 with different light-emitting areas are designed to have the same area, which is helpful to make the brightness display of the respective colors of the micro light-emitting display device 10B more uniform, and the advanced sorting grade (i.e. Bin) of the light-emitting elements can be omitted, thereby increasing the chip utilization rate.
Fig. 4A is a schematic top view of a micro light emitting display device according to a fourth embodiment of the present invention. Fig. 4B is a schematic side view of the micro light emitting display device of fig. 4A. Referring to fig. 4A and 4B, the micro light emitting display device 10C is substantially the same as the micro light emitting display device 10 of fig. 1B, and the main differences are as follows. In this embodiment, the first light-emitting auxiliary structures 300C are reflective layers or absorptive layers, and each have a light-emitting opening O. The light-emitting openings O of the first light-emitting auxiliary structure 300B have the same third pitch P3 therebetween. The first light emitting auxiliary structure 300C may be an organic material such as a black photoresist or a metal material with high reflectivity. The ratio of the light-emitting opening O to the surface 204 of the micro light-emitting device 200 is at least 0.5, which can provide better light-emitting efficiency.
In this embodiment, more specifically, the projection of the micro light emitting device 200 on the substrate 100 completely covers the projection of the light emitting opening O of the first light emitting auxiliary structure 300B on the substrate 100, that is, the light emitting opening O is smaller than the light emitting surface of the micro light emitting device 200, so as to control the light emitting type.
In addition, in the present embodiment, in any two adjacent display regions R1, R2, the minimum thicknesses t1, t2 between the edge of the first light extraction auxiliary structure 300 and the light extraction opening O thereof are different from each other, so that the design of the light extraction opening O can be controlled.
Based on the above, in the micro light emitting display device 10C of the embodiment of the present invention, the first light emitting auxiliary structure 300C is designed as a reflective layer or an absorbing layer, and the positions of the light emitting openings O are adjusted so that the light emitting positions of the respective micro light emitting elements 200 are uniform. Therefore, the phenomenon that the micro light emitting display device 10C has a splice line between the adjacent display regions R1, R2 is slowed down by adjusting the display area.
Fig. 5 is a schematic side view of a micro light emitting display device according to a fifth embodiment of the present invention. Referring to fig. 5, the micro light emitting display device 10D is substantially the same as the micro light emitting display device 10C of fig. 4B, with the following main differences. In this embodiment, the micro light emitting display device 10D further includes a plurality of second light emitting auxiliary structures 400. The second light-emitting auxiliary structures 400 are disposed in the light-emitting openings O of the first light-emitting auxiliary structures 300C, respectively. The second light extraction auxiliary structures 400 have the same fourth pitch P4, and the fourth pitch P4 is the same as the third pitch P3.
In the present embodiment, the second light-emitting auxiliary structure 400 is a light-guiding structure, and the refractive index of the second light-emitting auxiliary structure 400 is greater than 1 and smaller than that of the micro light-emitting device 200.
In the present embodiment, the projection of the second light emitting auxiliary structure 400 on the substrate 100 and the projection of the micro light emitting element 200 on the substrate 100 overlap each other. More specifically, the projection of the micro light emitting device 200 on the substrate 100 completely covers the projection of the second light emitting auxiliary structure 400 on the substrate 100, that is, the second light emitting auxiliary structure 400 is smaller than the light emitting surface of the micro light emitting device 200.
Based on the above, in the micro light emitting display device 10D of the embodiment of the present invention, the second light emitting auxiliary structure 400 is further provided in the light emitting opening O in addition to making the light emitting positions of the respective micro light emitting elements 200 uniform by adjusting the positions of the light emitting openings O of the first light emitting auxiliary structure 300C. Therefore, the micro light emitting display device 10C can reduce the occurrence of the splice line between the adjacent display regions R1 and R2 by reducing the brightness, and further improve the light emitting efficiency of the micro light emitting display device 10D by using the second light emitting auxiliary structure 400.
Fig. 6 is a schematic side view of a micro light emitting display device according to a sixth embodiment of the present invention. Referring to fig. 6, the micro light emitting display device 10E is substantially the same as the micro light emitting display device 10D of fig. 5, with the following main differences. In the present embodiment, a portion of the second light extraction auxiliary structure 400E is disposed on the surface of the first light extraction auxiliary structure 300C opposite to the micro light emitting element 200. The projection of the second light-emitting auxiliary structure 400E on the surface of the micro light-emitting element 200 is larger than the projection of the light-emitting opening O on the surface of the micro light-emitting element 200, and the projection of the second light-emitting auxiliary structure 400E on the surface of the micro light-emitting element 200 is the same, so as to increase the light-emitting efficiency and the uniform display effect. The advantage of the micro light emitting display device 10E is similar to that of the micro light emitting display device 10D, and will not be described herein.
Fig. 7A is a schematic top view of a micro light emitting display device according to a seventh embodiment of the present invention. Fig. 7B is a schematic side view of the micro light emitting display device of fig. 7A. Referring to fig. 7A and 7B, the micro light emitting display device 10F is substantially the same as the micro light emitting display device 10C of fig. 4B, with the following main differences. In the present embodiment, the first light-emitting auxiliary structures 300F are connected to each other, and the first light-emitting auxiliary structures 300F are disposed in the space between the micro light-emitting devices 200. Here, the first light-emitting auxiliary structure 300F fills the space between the micro light-emitting elements 200, thereby blocking the splice lines between the display regions R1, R2, further slowing down the phenomenon of splice lines within the micro light-emitting display device 10F, and increasing the contrast ratio by a high black ratio. In an embodiment not shown, the first light emitting auxiliary structure 300F may fill only the space between the display regions R1, R2.
Fig. 8A is a schematic top view of a micro light emitting display device according to an eighth embodiment of the present invention. Fig. 8B is a schematic side view of the micro light emitting display device of fig. 8A. Referring to fig. 8A and 8B, the micro light emitting display device 10G is substantially the same as the micro light emitting display device 10C of fig. 4B, with the following main differences. In this embodiment, the micro light emitting display device 10F further includes a light transmitting layer 500. The light-transmitting layer 500 is disposed between the first light-emitting auxiliary structure 300G and the micro light-emitting device 200, and the light-transmitting layer 500 is disposed in the space between the micro light-emitting devices 200. That is, the light-transmitting layer 500 can be used as a protective layer of the micro light-emitting device 200, which helps to prevent water in the air from polluting the micro light-emitting device 200, and further to make the yield of the micro light-emitting display apparatus 10F better. The light-transmitting layer 500 may be a plastic material with a refractive index greater than 1 and smaller than that of the micro light-emitting device 200, so that the micro light-emitting device 200 has better light-emitting effect. Here, the light-emitting auxiliary structure 300G may be a reflective layer or an absorptive layer, so that light is emitted through the outlet opening O.
Fig. 9 is a schematic side view of a micro light emitting display device according to a ninth embodiment of the present invention. Referring to fig. 9, the micro light emitting display device 10H is substantially the same as the micro light emitting display device 10C of fig. 4B, with the following main differences. In this embodiment, the light-emitting auxiliary structure 300H is a reflective layer or an absorptive layer, and each has light-emitting openings O1, O2, O3. The area of the light-emitting openings O1, O2, O3 of the light-emitting auxiliary structure 300H is gradually increased or gradually decreased at the boundary crossing any two adjacent display regions R1, R2, wherein the same opening O1, O2, or O3 has the same opening size.
In addition, the area ratio between the light-emitting openings O1, O2, O3 is too large or too small, which may instead cause a phenomenon of the splice lines to be more remarkable. Therefore, in the present embodiment, the area between the light emitting openings O1, O2, O3 of the light emitting auxiliary structure 400G is preferably within the range of 0.8 to 1.2.
Based on the above, by designing the areas of the light emitting openings O1, O2, O3 to gradually increase or gradually decrease in the vicinity of the splice line, it also helps to reduce the phenomenon that the splice line visually exists at the boundary between the display regions R1, R2. Preferably, only 10% of the light-emitting openings of the light-emitting auxiliary structure 300H at the boundary have an increasing or gradually decreasing manner, and the light-emitting openings of the middle display area still maintain a uniform opening size, so that a better display effect can be achieved.
In summary, in the micro light emitting display device according to an embodiment of the invention, since the light emitting auxiliary structures disposed on the micro light emitting elements have the same pitch, the light emitting effective area is redefined, so that the phenomenon of having a splice line between the display areas is alleviated.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (17)
1. A micro light emitting display device having a plurality of display areas, the micro light emitting display device comprising:
a substrate;
a plurality of micro light emitting elements disposed on the substrate, and positions of the plurality of micro light emitting elements define ranges of the plurality of display regions, wherein the plurality of micro light emitting elements have the same first pitch in any one display region among each other, and the plurality of micro light emitting elements have a second pitch between boundaries crossing any two adjacent display regions, the first pitch being different from the second pitch; and
the first light-emitting auxiliary structures are respectively arranged on the micro light-emitting elements, the first light-emitting auxiliary structures have the same third pitch, and the first pitch is the same as the third pitch.
2. The micro light emitting display device of claim 1, wherein the first pitch is the same as the third pitch.
3. The micro light emitting display device of claim 1, wherein the plurality of first light extraction auxiliary structures have a plurality of different areas.
4. The micro light emitting display device of claim 1, wherein the plurality of micro light emitting elements have a plurality of different light emitting areas, and the plurality of first light extraction auxiliary structures have the same area.
5. The micro light emitting display device of claim 1, wherein the plurality of first light extraction auxiliary structures are light guiding structures, and wherein a refractive index of the plurality of first light extraction auxiliary structures is greater than 1 and less than a refractive index of the plurality of micro light emitting elements.
6. The micro light emitting display device according to claim 1, wherein in the any two adjacent display regions, minimum distances between edges of the plurality of first light extraction auxiliary structures and edges of the plurality of micro light emitting elements are different from each other.
7. The micro light emitting display device of claim 1, wherein the plurality of first light extraction auxiliary structures are reflective layers or absorptive layers and each have a light extraction opening.
8. The micro light emitting display device of claim 7, wherein the light exit openings of the plurality of first light exit auxiliary structures have the same third pitch therebetween.
9. The micro light emitting display device of claim 7, wherein the projection of the plurality of micro light emitting elements onto the substrate completely covers the projection of the light exit openings of the plurality of first light exit auxiliary structures onto the substrate.
10. The micro light emitting display device of claim 7, wherein in any two adjacent display areas, a minimum thickness between edges of the plurality of first light extraction auxiliary structures and light extraction openings thereof is different from each other.
11. The miniature light emitting display device of claim 7, further comprising:
the second light-emitting auxiliary structures are respectively arranged in the light-emitting openings of the first light-emitting auxiliary structures, the second light-emitting auxiliary structures have the same fourth pitch, and the fourth pitch is the same as the third pitch.
12. The micro light emitting display device of claim 11, wherein the plurality of second light extraction auxiliary structures are light guiding structures, and wherein a refractive index of the plurality of second light extraction auxiliary structures is greater than 1 and less than a refractive index of the plurality of micro light emitting elements.
13. The micro light emitting display device of claim 11, wherein a portion of the plurality of second light extraction auxiliary structures is disposed on a surface of the plurality of first light extraction auxiliary structures opposite to the plurality of micro light emitting elements.
14. The micro light emitting display device according to claim 7, wherein the plurality of first light emitting auxiliary structures are connected to each other, and the plurality of first light emitting auxiliary structures are disposed in spaces between the plurality of micro light emitting elements.
15. The miniature light emitting display device of claim 7, further comprising:
the light-transmitting layer is arranged between the plurality of first light-emitting auxiliary structures and the plurality of micro light-emitting elements, and the light-transmitting layer configures the space among the plurality of micro light-emitting elements.
16. A micro light emitting display device having a plurality of display areas, the micro light emitting display device comprising:
a substrate;
a plurality of micro light emitting elements disposed on the substrate, and positions of the plurality of micro light emitting elements define ranges of the plurality of display regions, wherein the plurality of micro light emitting elements have the same first pitch in any one display region among each other, and the plurality of micro light emitting elements have a second pitch between boundaries crossing any two adjacent display regions, the first pitch being different from the second pitch; and
the light-emitting auxiliary structures are respectively arranged on the micro light-emitting elements, are reflection layers or absorption layers and are respectively provided with a light-emitting opening,
the areas of the light-emitting openings of the light-emitting auxiliary structures are gradually increased or gradually decreased at the boundary crossing any two adjacent display areas, and the positions of the light-emitting openings are adjusted to enable the light-emitting positions of the micro light-emitting elements to be consistent.
17. The micro light emitting display device of claim 16, wherein an area ratio between light emitting openings of the plurality of light emitting auxiliary structures falls within a range of 0.8 to 1.2.
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| JP2017003849A (en) * | 2015-06-12 | 2017-01-05 | 株式会社ジャパンディスプレイ | Display device |
| WO2017209437A1 (en) * | 2016-05-31 | 2017-12-07 | Lg Electronics Inc. | Display device using semiconductor light emitting device and fabrication method thereof |
| TWI658307B (en) * | 2017-10-30 | 2019-05-01 | 錼創科技股份有限公司 | Light emitting diode display |
| TWI658584B (en) * | 2018-03-20 | 2019-05-01 | 友達光電股份有限公司 | Mosaic display device |
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| CN111105720A (en) * | 2018-10-09 | 2020-05-05 | 财团法人工业技术研究院 | Tiled display device |
| TWI676286B (en) * | 2018-12-05 | 2019-11-01 | 英屬開曼群島商錼創科技股份有限公司 | Micro led display device and manufacturing method thereof |
| US11538406B2 (en) * | 2019-11-28 | 2022-12-27 | Boe Technology Group Co., Ltd. | Display substrate, display panel and spliced screen |
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