CN113443837A - 一种双银low-e镀膜玻璃 - Google Patents
一种双银low-e镀膜玻璃 Download PDFInfo
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- 239000011521 glass Substances 0.000 title claims abstract description 34
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 14
- 239000004332 silver Substances 0.000 title claims abstract description 14
- 229910020776 SixNy Inorganic materials 0.000 claims abstract description 25
- 230000004888 barrier function Effects 0.000 claims abstract description 21
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910001120 nichrome Inorganic materials 0.000 claims abstract description 21
- 229910008328 ZrNx Inorganic materials 0.000 claims abstract description 10
- 229910007667 ZnOx Inorganic materials 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000002834 transmittance Methods 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 3
- 229910003134 ZrOx Inorganic materials 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 20
- 238000004544 sputter deposition Methods 0.000 description 16
- 239000007789 gas Substances 0.000 description 15
- 238000000576 coating method Methods 0.000 description 12
- 229910052786 argon Inorganic materials 0.000 description 10
- 238000001755 magnetron sputter deposition Methods 0.000 description 10
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- PWKWDCOTNGQLID-UHFFFAOYSA-N [N].[Ar] Chemical compound [N].[Ar] PWKWDCOTNGQLID-UHFFFAOYSA-N 0.000 description 7
- 238000005477 sputtering target Methods 0.000 description 7
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 6
- 239000012495 reaction gas Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000005344 low-emissivity glass Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910001093 Zr alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Abstract
本发明公开了一种双银LOW‑E镀膜玻璃，包括玻璃基材，所述玻璃基材的上表面由下而上依次设有SixNy基膜层、第一NiCr阻挡层、第一Ag层、第一ZnOx介质层、第二SixNy膜层、第二NiCr阻挡层、第二Ag层、第三NiCr阻挡层、第三SixNy膜层、以及ZrNx顶膜层。本发明提供的一种单银LOW‑E镀膜玻璃利用SixNy作为基膜层和ZrOx作为顶膜层，使膜层具有较好的粘结性和较佳机械强度,同时，利用AZO提高玻璃的透光率,本玻璃的透过率≥50％，辐射率≤0.04，可见光室外反射比小于15%，光学性能良好。
Description
技术领域
本发明涉及玻璃制造技术技术领域，具体来说，涉及一种双银LOW-E镀膜玻璃。
背景技术
镀膜玻璃（Reflective glass）也称反射玻璃。镀膜玻璃是在玻璃表面涂镀一层或多层金属、合金或金属化合物薄膜，以改变玻璃的光学性能，满足某种特定要求。镀膜玻璃按产品的不同特性，可分为以下几类：热反射玻璃、低辐射玻璃（Low-E）、导电膜玻璃等，具有广阔的应用场景，因此提供一种新型的镀膜玻璃具有重要的意义。
发明内容
本发明的目的在于提供一种双银LOW-E镀膜玻璃，以解决上述背景技术中提出的问题。
为实现上述目的，本发明提供如下技术方案：一种双银LOW-E镀膜玻璃，包括玻璃基材，所述玻璃基材的上表面由下而上依次设有SixNy基膜层、第一NiCr阻挡层、第一Ag层、第一ZnOx介质层、第二SixNy膜层、第二NiCr阻挡层、第二Ag层、第三NiCr阻挡层、第三SixNy膜层、以及ZrNx顶膜层，各膜的材料依次为硅铝合金膜、镍铬合金膜、银膜、氧化锌膜、硅铝合金膜、镍铬合金膜、银膜、镍铬合金膜、硅铝合金膜和锆合金膜。
进一步的，所述SixNy基膜层的厚度为30～40nm，所述ZrNx顶膜层的厚度为10～15nm，所述第一NiCr阻挡层的厚度为2～5nm，第二NiCr阻挡层的厚度为1.7～5nm，第三NiCr阻挡层的厚度为1.6～5nm，所述第一Ag层和第二Ag层的厚度为6～12nm，所述第一ZnOx介质层厚度为15～20nm，所述第二SixNy膜层60～80nm和第三SixNy膜层为介质层厚度为30～50nm，所述SixNy基膜层、所述ZrNx顶膜层为保护层厚度为10～15nm。
与现有技术相比，本发明具有以下有益效果：
1、利用SixNy作为基膜层和ZrNx顶膜层，使膜层具有较好的粘结性和较佳机械强度；同时，利用ZnOx提高玻璃的透光率。
2、本玻璃透过率≥50％，辐射率≤0.04，可见光室外反射≤15，遮阳系数SC≤0.40；本玻璃颜色显蓝色，通过色度仪可以测得如下颜色坐标值：a*＝-1～-3，b*＝-25～-30，光学性能良好。
具体实施方式
下面，结合具体实施方式，对本发明做出进一步的描述：
根据本发明实施例的一种双银LOW-E镀膜玻璃,包括玻璃基材，所述玻璃基材的上表面由下而上依次设有SixNy基膜层、第一NiCr阻挡层、第一Ag层、第一ZnOx介质层、第二SixNy膜层、第二NiCr阻挡层、第二Ag层、第三NiCr阻挡层、第三SixNy膜层、以及ZrNx顶膜层。
根据本实施例的上述方案，所述SixNy基膜层的厚度为30～40nm。其采用磁控溅射镀膜工艺，用交流中频电源、氩气作为溅射气体、氮气作反应气体溅射硅铝靶(硅铝质量百分比92:8)制备而成，其中，氩氮比为(400SCCM～520SCCM)：(600SCCM～750SCCM)，氩氮比是该膜层的核心，决定了成膜的质量。
根据本实施例的上述方案，所述第一NiCr阻挡层的厚度为2～5nm。其采用磁控溅射镀膜工艺，用直流电源溅射镍铬合金、用氩气作为溅射气体制备而成,气体流量500～800SCCM。
根据本实施例的上述方案，所述第一Ag层的厚度为6～12nm。其采用磁控溅射镀膜工艺，用直流电源溅射银靶、用氩气作为溅射气体制备而成，气体流量500～650SCCM。
根据本实施例的上述方案，所述第一ZnOx膜层的厚度为15～20nm。其采用磁控溅射镀膜工艺，用交流中频电源、以氩气为溅射气体、氧气作反应气体射陶瓷AZO靶制备而成，其中，氩氧比为(800SCCM～1000SCCM)：(50SCCM～60SCCM)，氩氧比是该膜层的核心。
根据本实施例的上述方案，所述第二SixNy膜层的厚度为60～80nm。其采用磁控溅射镀膜工艺，用交流中频电源、氩气作为溅射气体、氮气作反应气体溅射硅铝靶(硅铝质量百分比92:8)制备而成，其中，氩氮比为(400SCCM～520SCCM)：(600SCCM～750SCCM)，氩氮比是该膜层的核心，决定了成膜的质量。
根据本实施例的上述方案，所述第二NiCr阻挡层的厚度为1.7～5nm。其采用磁控溅射镀膜工艺，用直流电源溅射镍铬合金、用氩气作为溅射气体制备而成,气体流量500～800SCCM。
根据本实施例的上述方案，所述第二Ag层的厚度为6～12nm。其采用磁控溅射镀膜工艺，用直流电源溅射银靶、用氩气作为溅射气体制备而成，气体流量500～650SCCM。
根据本实施例的上述方案，所述第三NiCr阻挡层的厚度为1.6～5nm。其采用磁控溅射镀膜工艺，用直流电源溅射镍铬合金、用氩气作为溅射气体制备而成,气体流量500～800SCCM。
根据本实施例的上述方案，所述第三SixNy膜层的厚度为30～50nm。其采用磁控溅射镀膜工艺，用交流中频电源、氩气作为溅射气体、氮气作反应气体溅射硅铝靶(硅铝质量百分比92:8)制备而成，其中，氩氮比为(400SCCM～520SCCM)：(600SCCM～750SCCM)，氩氮比是该膜层的核心，决定了成膜的质量。
根据本实施例的上述方案，所述ZrNx顶膜层的厚度为10～15nm。其采用磁控溅射镀膜工艺，用交流中频电源、氩气作为溅射气体、氮气作反应气体溅射氧化锆靶制备而成，其中，氩氧比为(400SCCM～520SCCM)：(440SCCM～600SCCM)，氩氮比是该膜层的核心，决定了成膜的质量。
最后应说明的是：以上所述仅为本发明的优选实施例而已，并不用于限定本发明，尽管参照前述实施例对本发明进行了详细的说明，对于本领域的技术人员来说，其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (2)
1.一种双银LOW-E镀膜玻璃，包括玻璃基材，其特征在于，所述玻璃基材的上表面由下而上依次设有SixNy基膜层、第一NiCr阻挡层、第一Ag层、第一ZnOx介质层、第二SixNy膜层、第二NiCr阻挡层、第二Ag层、第三NiCr阻挡层、第三SixNy膜层、以及ZrNx顶膜层。
2.根据权利要求1所述的一种双银LOW-E镀膜玻璃，其特征在于，所述SixNy基膜层的厚度为30～40nm，所述ZrNx顶膜层的厚度为10～15nm，所述第一NiCr阻挡层的厚度为2～5nm，第二NiCr阻挡层的厚度为1.7～5nm，第三NiCr阻挡层的厚度为1.6～5nm，所述第一Ag层和第二Ag层的厚度为6～12nm，所述第一ZnOx介质层厚度为15～20nm，所述第二SixNy膜层60～80nm和第三SixNy膜层为介质层厚度为30～50nm，所述SixNy基膜层、所述ZrNx顶膜层为保护层厚度为10～15nm。
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