CN113426795A - Method for recovering crystalline silicon photovoltaic material - Google Patents
Method for recovering crystalline silicon photovoltaic material Download PDFInfo
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- CN113426795A CN113426795A CN202010205381.2A CN202010205381A CN113426795A CN 113426795 A CN113426795 A CN 113426795A CN 202010205381 A CN202010205381 A CN 202010205381A CN 113426795 A CN113426795 A CN 113426795A
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 33
- 239000000463 material Substances 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000012634 fragment Substances 0.000 claims abstract description 35
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 24
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000001914 filtration Methods 0.000 claims abstract description 21
- 238000010438 heat treatment Methods 0.000 claims abstract description 18
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000005038 ethylene vinyl acetate Substances 0.000 claims abstract description 17
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims abstract description 17
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000006243 chemical reaction Methods 0.000 claims abstract description 16
- 238000001035 drying Methods 0.000 claims abstract description 16
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 12
- 238000001816 cooling Methods 0.000 claims abstract description 11
- 229910021642 ultra pure water Inorganic materials 0.000 claims abstract description 11
- 239000012498 ultrapure water Substances 0.000 claims abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 10
- 239000002313 adhesive film Substances 0.000 claims abstract description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000011521 glass Substances 0.000 claims abstract description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 8
- 238000012216 screening Methods 0.000 claims abstract description 8
- 239000013078 crystal Substances 0.000 claims abstract description 7
- 229920006342 thermoplastic vulcanizate Polymers 0.000 claims abstract description 7
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 claims abstract description 6
- 238000001704 evaporation Methods 0.000 claims abstract description 6
- 235000021110 pickles Nutrition 0.000 claims abstract description 6
- 238000001556 precipitation Methods 0.000 claims abstract description 6
- 238000002386 leaching Methods 0.000 claims description 8
- 230000035484 reaction time Effects 0.000 claims description 6
- 101710134784 Agnoprotein Proteins 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000007664 blowing Methods 0.000 claims description 5
- 238000002425 crystallisation Methods 0.000 claims description 5
- 230000008025 crystallization Effects 0.000 claims description 5
- 238000000643 oven drying Methods 0.000 claims description 5
- 238000007781 pre-processing Methods 0.000 claims description 5
- 238000005406 washing Methods 0.000 claims description 5
- 238000011084 recovery Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000002699 waste material Substances 0.000 description 5
- 239000003153 chemical reaction reagent Substances 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 238000003912 environmental pollution Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000000053 physical method Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000009270 solid waste treatment Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B09—DISPOSAL OF SOLID WASTE; RECLAMATION OF CONTAMINATED SOIL
- B09B—DISPOSAL OF SOLID WASTE NOT OTHERWISE PROVIDED FOR
- B09B3/00—Destroying solid waste or transforming solid waste into something useful or harmless
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B09—DISPOSAL OF SOLID WASTE; RECLAMATION OF CONTAMINATED SOIL
- B09B—DISPOSAL OF SOLID WASTE NOT OTHERWISE PROVIDED FOR
- B09B5/00—Operations not covered by a single other subclass or by a single other group in this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
- Y02W30/00—Technologies for solid waste management
- Y02W30/20—Waste processing or separation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
- Y02W30/00—Technologies for solid waste management
- Y02W30/50—Reuse, recycling or recovery technologies
- Y02W30/60—Glass recycling
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- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Silicon Compounds (AREA)
Abstract
The invention relates to a method for recovering crystalline silicon photovoltaic material, which comprises the following steps: disassembling an aluminum frame and a junction box outside the photovoltaic cell, burning to remove an EVA (ethylene vinyl acetate) adhesive film, and then removing an upper glass plate and a bottom TPT (thermoplastic vulcanizate) back plate to obtain the photovoltaic cell; crushing and screening the photovoltaic cell; putting the obtained photovoltaic cell fragments into ultrapure water, and cleaning for 25min under the conditions of ultrasonic power of 100W and temperature of 25 ℃; putting the obtained photovoltaic cell fragments into a sodium hydroxide solution for reaction; filtering, adding sulfuric acid to adjust the pH value until aluminum hydroxide precipitation occurs; cleaning and drying the treated photovoltaic cell fragments, and putting the photovoltaic cell fragments into a nitric acid solution for reaction; heating and evaporating the obtained pickle liquor, standing at normal temperature, cooling and crystallizing to obtain AgNO3 crystal; and immersing the photovoltaic cell piece with the Al and the Ag removed into a hydrofluoric acid solution for reaction, wherein the reaction temperature is normal temperature.
Description
Technical Field
The invention relates to the field of solid waste treatment, in particular to a method for recovering crystalline silicon photovoltaic materials.
Background
Crystalline silicon (C-Si) solar cells are currently the most widely used solar cells, mainly because crystalline silicon has stability and efficiency can reach 15% -25%. Crystalline silicon has proven to be reliable in general, but crystalline silicon has poor ability to absorb light, which may be an inherent defect of its subminiature structure, and thus must be relatively thick and robust. A basic crystalline silicon cell comprises 7 layers of transparent adhesive attached to a protective glass layer, followed by an anti-reflective coating to ensure that all light passes through the silicon crystal layer; similar to semiconductor technology, the N layers sandwich the P layer, with two electrical contacts: the upper layer is positively charged and the lower layer is negatively charged. Generally, there are two types of crystalline silicon: monocrystalline silicon and polycrystalline silicon, wherein the monocrystalline silicon is high-purity monocrystalline silicon, is cut from a wafer with the diameter of 150mm, and has the thickness of 200 mm; polysilicon is more popular and is produced in larger quantities, such as by slicing silicon into strips and then into wafers. In any case, the electric quantity generated by the silicon solar cell is about 0.5V, and the output voltage can be improved by connecting a plurality of cells in series.
Photovoltaic enterprises inevitably generate a large amount of crystalline silicon plate fragments and waste materials in the production and manufacturing process of solar panels, and a plurality of unqualified products are also generated in the production process; in the use process of the crystalline silicon solar cell product, a large amount of waste plates are generated when the crystalline silicon solar cell product reaches a certain service life or is subjected to daily maintenance and updating, the waste plates contain a large amount of glass, carbon steel, plastic, copper, silicon, silver and other materials, and the random discarding treatment causes environmental pollution and resource waste.
In China, solid waste treatment enterprises have explored the recovery of crystalline silicon photovoltaic materials, for example, the Chinese patent application: a method for recovering crystalline silicon photovoltaic material (application publication number: CN110743893A) discloses a recovery method, which comprises the following steps: crushing and screening the pretreated photovoltaic cell to obtain photovoltaic cell powder, heating the photovoltaic cell powder to 660-1000 ℃ to separate aluminum, and then continuously heating to 961.78-1000 ℃ to separate silver and polysilicon; wherein, the pretreatment comprises the following steps: disassembling an aluminum frame and a junction box outside the photovoltaic cell, burning to remove an EVA (ethylene vinyl acetate) adhesive film, and then removing an upper glass plate and a bottom TPT (thermoplastic vulcanizate) back plate to obtain the photovoltaic cell; the crushing and screening adopts a screen with 180 meshes and 220 meshes. Although the recovery method can realize the recovery of the photovoltaic cell piece according to the difference of the melting points of aluminum, silver and polycrystalline silicon in the photovoltaic cell piece, the EVA adhesive film needs to be burnt to remove during pretreatment, the melting point of the EVA adhesive film is very high, and the energy consumed during burning is high; in addition, in order to separate silver from polysilicon, the temperature is heated to 1000 ℃, a large amount of toxic gas needs to be discharged into the air, the treatment cost is correspondingly increased, and the recovery of the crystalline silicon photovoltaic material is not facilitated.
Therefore, further improvements in the methods of recycling crystalline silicon photovoltaic materials are needed.
Disclosure of Invention
The invention aims to provide a method for recovering crystalline silicon photovoltaic materials, which can improve the recovery rate of various materials in the crystalline silicon photovoltaic materials and has low pollution degree to the environment.
In order to achieve the purpose of the invention, the invention provides a method for recovering a crystalline silicon photovoltaic material, which comprises the following specific steps:
s1: preprocessing, namely disassembling an aluminum frame and a junction box outside the photovoltaic cell, burning to remove an EVA (ethylene vinyl acetate) adhesive film, and then removing an upper glass plate and a bottom TPT (thermoplastic vulcanizate) back plate to obtain the photovoltaic cell; the burning temperature is 600 ℃, and the time is 1 hour;
s2: crushing, namely crushing and screening the photovoltaic cell to obtain photovoltaic cell fragments;
s3: putting the photovoltaic cell fragments obtained in the step S2 into ultrapure water, cleaning for 25min under the conditions of ultrasonic power of 100W and temperature of 25 ℃, and putting the fragments into an electrothermal blowing drying oven to dry at constant temperature of 40 ℃ to constant weight;
s4: putting the photovoltaic cell fragments obtained in the step S3 into a sodium hydroxide solution with the concentration of 10-30% to react for 10-40 min at the temperature of 10-60 ℃;
s5: filtering the obtained alkaline leaching solution, and adding sulfuric acid to adjust the pH value until aluminum hydroxide precipitation occurs;
s6: cleaning and drying the photovoltaic cell fragments treated in the S4, and then putting the photovoltaic cell fragments into a nitric acid solution with the concentration of 1-6 mol/L for reaction for 20-60 min, wherein the reaction temperature is 20-80 ℃;
s7: heating and evaporating the obtained pickle liquor, standing at normal temperature, cooling, crystallizing, filtering, washing with a small amount of anhydrous ethanol, filtering to dry, and drying at 120 deg.C to obtain crude AgNO3A product;
s8: the crude AgNO obtained in S73Dissolving with ultrapure water, heating, filtering, heating again to surface crystallization, standing, cooling, crystallizing, and oven drying at 120 deg.C to obtain AgNO3A crystal;
s9: and immersing the photovoltaic cell piece with the Al and the Ag removed into 10-40% hydrofluoric acid solution, and reacting for 5-20 min at normal temperature.
Further, the sodium hydroxide concentration in step S4 was 20%, the temperature was 20 ℃, and the reaction time was 20 min.
Further, the concentration of the nitric acid solution in the step S6 is 5mol/L, the reaction time is 40min, and the reaction temperature is 40 ℃.
Further, the concentration of the hydrofluoric acid solution in step S9 was 20%, and the reaction time was 11 min.
Compared with the prior art, the method for recovering the crystalline silicon photovoltaic material has the following advantages:
(1) the physical method and the chemical method are combined, so that the pollution degree of the atmosphere and the environment is controllable as much as possible, and the combustion waste gas and the waste liquid which cannot be treated are avoided;
(2) different treatment methods are adopted for different materials, so that the recovery utilization rate of various materials is improved.
Detailed Description
The present invention will be further described with reference to the following specific examples.
Example 1
A method for recovering crystalline silicon photovoltaic material comprises the following steps:
s1: preprocessing, namely disassembling an aluminum frame and a junction box outside the photovoltaic cell, burning to remove an EVA (ethylene vinyl acetate) adhesive film, and then removing an upper glass plate and a bottom TPT (thermoplastic vulcanizate) back plate to obtain the photovoltaic cell; the burning temperature is 600 ℃, and the time is 1 hour;
s2: crushing, namely crushing and screening the photovoltaic cell to obtain photovoltaic cell fragments;
s3: putting the photovoltaic cell fragments obtained in the step S2 into ultrapure water, cleaning for 25min under the conditions of ultrasonic power of 100W and temperature of 25 ℃, and putting the fragments into an electrothermal blowing drying oven to dry at constant temperature of 40 ℃ to constant weight;
s4: putting the photovoltaic cell fragments obtained in the step S3 into a sodium hydroxide solution with the concentration of 10% to react for 40min at the temperature of 10 ℃;
s5: filtering the obtained alkaline leaching solution, and adding sulfuric acid to adjust the pH value until aluminum hydroxide precipitation occurs;
s6: cleaning and drying the photovoltaic cell fragments treated in the S4, and then putting the photovoltaic cell fragments into a nitric acid solution with the concentration of 1mol/L for reaction for 60min, wherein the reaction temperature is 80 ℃;
s7: heating and evaporating the obtained pickle liquor at normal temperatureStanding, cooling, crystallizing, filtering, washing with small amount of anhydrous ethanol, filtering, drying at 120 deg.C to obtain crude AgNO3A product;
s8: the crude AgNO obtained in S73Dissolving with ultrapure water, heating, filtering, heating again to surface crystallization, standing, cooling, crystallizing, and oven drying at 120 deg.C to obtain AgNO3A crystal;
s9: and (3) immersing the photovoltaic cell piece with the Al and the Ag removed into a 10% hydrofluoric acid solution, and reacting for 20min at normal temperature.
Example 2
A method for recovering crystalline silicon photovoltaic material comprises the following steps:
s1: preprocessing, namely disassembling an aluminum frame and a junction box outside the photovoltaic cell, burning to remove an EVA (ethylene vinyl acetate) adhesive film, and then removing an upper glass plate and a bottom TPT (thermoplastic vulcanizate) back plate to obtain the photovoltaic cell; the burning temperature is 600 ℃, and the time is 1 hour;
s2: crushing, namely crushing and screening the photovoltaic cell to obtain photovoltaic cell fragments;
s3: putting the photovoltaic cell fragments obtained in the step S2 into ultrapure water, cleaning for 25min under the conditions of ultrasonic power of 100W and temperature of 25 ℃, and putting the fragments into an electrothermal blowing drying oven to dry at constant temperature of 40 ℃ to constant weight;
s4: putting the photovoltaic cell fragments obtained in the step S3 into a sodium hydroxide solution with the concentration of 30% to react for 10min at the temperature of 60 ℃;
s5: filtering the obtained alkaline leaching solution, and adding sulfuric acid to adjust the pH value until aluminum hydroxide precipitation occurs;
s6: cleaning and drying the photovoltaic cell fragments treated in the S4, and then putting the photovoltaic cell fragments into a nitric acid solution with the concentration of 6mol/L for reaction for 20min, wherein the reaction temperature is 20 ℃;
s7: heating and evaporating the obtained pickle liquor, standing at normal temperature, cooling, crystallizing, filtering, washing with a small amount of anhydrous ethanol, filtering to dry, and drying at 120 deg.C to obtain crude AgNO3A product;
s8: the crude AgNO obtained in S73Dissolving with ultrapure water, heating, filtering, heating again to surface crystallization, standing, cooling, crystallizing, and oven drying at 120 deg.C to obtain AgNO3A crystal;
s9: and (3) immersing the photovoltaic cell piece with the Al and the Ag removed into 40% hydrofluoric acid solution, and reacting for 5min at normal temperature.
Example 3
A method for recovering crystalline silicon photovoltaic material comprises the following steps:
s1: preprocessing, namely disassembling an aluminum frame and a junction box outside the photovoltaic cell, burning to remove an EVA (ethylene vinyl acetate) adhesive film, and then removing an upper glass plate and a bottom TPT (thermoplastic vulcanizate) back plate to obtain the photovoltaic cell; the burning temperature is 600 ℃, and the time is 1 hour;
s2: crushing, namely crushing and screening the photovoltaic cell to obtain photovoltaic cell fragments;
s3: putting the photovoltaic cell fragments obtained in the step S2 into ultrapure water, cleaning for 25min under the conditions of ultrasonic power of 100W and temperature of 25 ℃, and putting the fragments into an electrothermal blowing drying oven to dry at constant temperature of 40 ℃ to constant weight;
s4: putting the photovoltaic cell fragments obtained in the step S3 into a sodium hydroxide solution with the concentration of 20% to react for 20min at the temperature of 20 ℃;
s5: filtering the obtained alkaline leaching solution, and adding sulfuric acid to adjust the pH value until aluminum hydroxide precipitation occurs;
s6: cleaning and drying the photovoltaic cell fragments treated in the S4, and then putting the photovoltaic cell fragments into a nitric acid solution with the concentration of 5mol/L for reaction for 40min, wherein the reaction temperature is 40 ℃;
s7: heating and evaporating the obtained pickle liquor, standing at normal temperature, cooling, crystallizing, filtering, washing with a small amount of anhydrous ethanol, filtering to dry, and drying at 120 deg.C to obtain crude AgNO3A product;
s8: the crude AgNO obtained in S73Dissolving with ultrapure water, heating, filtering, heating again to surface crystallization, standing, cooling, crystallizing, and oven drying at 120 deg.C to obtain AgNO3A crystal;
s9: and (3) immersing the photovoltaic cell piece with the Al and the Ag removed into a 20% hydrofluoric acid solution, and reacting for 11min at normal temperature.
Through physical method and chemical reagent leaching, EVA in the crystalline silicon photovoltaic material can be mostly decomposed, parts such as cover plate glass, crystalline silicon battery piece and back plate in the crystalline silicon photovoltaic material can be relatively simply separated, Al, Ag and silicon wafer in the crystalline silicon battery piece are respectively recovered through chemical reagent leaching, the recovery rate is high, the physical firing temperature is low, and the generation of toxic and harmful substances can be effectively controlled; when chemical reagent leaching is carried out, conventional acid-base reagents are adopted, the subsequent treatment is relatively simple, and the environmental pollution is small.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of this patent application, "plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In this specification, unless expressly stated or limited otherwise, the terms "mounted," "connected," and "fixed" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integral to one another; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present specification can be understood by those of ordinary skill in the art as appropriate.
In this specification, unless explicitly stated or limited otherwise, a first feature may be "on" or "under" a second feature such that the first and second features are in direct contact, or the first and second features are in indirect contact via an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (4)
1. A method for recovering crystalline silicon photovoltaic material is characterized by comprising the following specific steps:
s1: preprocessing, namely disassembling an aluminum frame and a junction box outside the photovoltaic cell, burning to remove an EVA (ethylene vinyl acetate) adhesive film, and then removing an upper glass plate and a bottom TPT (thermoplastic vulcanizate) back plate to obtain the photovoltaic cell; the burning temperature is 600 ℃, and the time is 1 hour;
s2: crushing, namely crushing and screening the photovoltaic cell to obtain photovoltaic cell fragments;
s3: putting the photovoltaic cell fragments obtained in the step S2 into ultrapure water, cleaning for 25min under the conditions of ultrasonic power of 100W and temperature of 25 ℃, and putting the fragments into an electrothermal blowing drying oven to dry at constant temperature of 40 ℃ to constant weight;
s4: putting the photovoltaic cell fragments obtained in the step S3 into a sodium hydroxide solution with the concentration of 10-30% to react for 10-40 min at the temperature of 10-60 ℃;
s5: filtering the obtained alkaline leaching solution, and adding sulfuric acid to adjust the pH value until aluminum hydroxide precipitation occurs;
s6: cleaning and drying the photovoltaic cell fragments treated in the S4, and then putting the photovoltaic cell fragments into a nitric acid solution with the concentration of 1-6 mol/L for reaction for 20-60 min, wherein the reaction temperature is 20-80 ℃;
s7: heating and evaporating the obtained pickle liquor, standing at normal temperature, cooling, crystallizing, filtering, washing with a small amount of anhydrous ethanol, filtering to dry, and drying at 120 deg.C to obtain crude AgNO3A product;
s8: the crude AgNO obtained in S73Dissolving with ultrapure water, heating, filtering, heating again to surface crystallization, standing, cooling, crystallizing, and oven drying at 120 deg.C to obtain AgNO3A crystal;
s9: and immersing the photovoltaic cell piece with the Al and the Ag removed into 10-40% hydrofluoric acid solution, and reacting for 5-20 min at normal temperature.
2. The method for recovering crystalline silicon photovoltaic material according to claim 1, wherein the concentration of sodium hydroxide in step S4 is 20%, the temperature is 20 ℃, and the reaction time is 20 min.
3. The method for recovering a crystalline silicon photovoltaic material as claimed in claim 1, wherein the concentration of the nitric acid solution in the step S6 is 5mol/L, the reaction time is 40min, and the reaction temperature is 40 ℃.
4. The method for recovering crystalline silicon photovoltaic material according to claim 1, wherein the concentration of the hydrofluoric acid solution in step S9 is 20%, and the reaction time is 11 min.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114367517A (en) * | 2022-01-10 | 2022-04-19 | 中南大学 | Comprehensive recycling method for waste photovoltaic modules |
| CN114522965A (en) * | 2022-03-12 | 2022-05-24 | 湖北智烨新能科技有限公司 | Green and environment-friendly recycling method for new energy material |
| CN115488130A (en) * | 2022-09-26 | 2022-12-20 | 常州工学院 | Decommissioning photovoltaic module disassembling method based on low-temperature pyrolysis |
-
2020
- 2020-03-23 CN CN202010205381.2A patent/CN113426795A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114367517A (en) * | 2022-01-10 | 2022-04-19 | 中南大学 | Comprehensive recycling method for waste photovoltaic modules |
| CN114367517B (en) * | 2022-01-10 | 2023-09-19 | 中南大学 | Comprehensive recycling method for waste photovoltaic modules |
| CN114522965A (en) * | 2022-03-12 | 2022-05-24 | 湖北智烨新能科技有限公司 | Green and environment-friendly recycling method for new energy material |
| CN115488130A (en) * | 2022-09-26 | 2022-12-20 | 常州工学院 | Decommissioning photovoltaic module disassembling method based on low-temperature pyrolysis |
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