CN106032553B - A kind of recovery method of copper-indium-gallium-selenium photovoltaic component - Google Patents
A kind of recovery method of copper-indium-gallium-selenium photovoltaic component Download PDFInfo
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- CN106032553B CN106032553B CN201510104365.3A CN201510104365A CN106032553B CN 106032553 B CN106032553 B CN 106032553B CN 201510104365 A CN201510104365 A CN 201510104365A CN 106032553 B CN106032553 B CN 106032553B
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- 238000000034 method Methods 0.000 title claims abstract description 55
- 238000011084 recovery Methods 0.000 title claims abstract description 32
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052738 indium Inorganic materials 0.000 claims abstract description 22
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000011669 selenium Substances 0.000 claims abstract description 22
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000012634 fragment Substances 0.000 claims abstract description 20
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 20
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 18
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000843 powder Substances 0.000 claims abstract description 17
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 12
- 239000011733 molybdenum Substances 0.000 claims abstract description 12
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 11
- 239000010935 stainless steel Substances 0.000 claims abstract description 11
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 86
- 239000000243 solution Substances 0.000 claims description 20
- 238000005406 washing Methods 0.000 claims description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 15
- 238000012545 processing Methods 0.000 claims description 13
- 238000001914 filtration Methods 0.000 claims description 9
- 238000007654 immersion Methods 0.000 claims description 9
- 238000004821 distillation Methods 0.000 claims description 7
- 238000000605 extraction Methods 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 238000004064 recycling Methods 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 5
- 238000005868 electrolysis reaction Methods 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 238000002791 soaking Methods 0.000 claims description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 3
- 239000003518 caustics Substances 0.000 claims description 3
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 238000005194 fractionation Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000002156 mixing Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 8
- 239000003513 alkali Substances 0.000 abstract description 2
- 239000007769 metal material Substances 0.000 abstract description 2
- 238000000926 separation method Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 7
- 235000016768 molybdenum Nutrition 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000002699 waste material Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 239000006166 lysate Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910000928 Yellow copper Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
- Y02W30/00—Technologies for solid waste management
- Y02W30/50—Reuse, recycling or recovery technologies
- Y02W30/82—Recycling of waste of electrical or electronic equipment [WEEE]
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- Manufacture And Refinement Of Metals (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to a kind of recovery methods of copper-indium-gallium-selenium photovoltaic component.The present invention utilizes the characteristic that can be reacted with alkali as the molybdenum layer of back electrode in CIGS thin-film photovoltaic module, broken CIGS thin-film photovoltaic module fragment is immersed in lye, and control the concentration and concentration of lye, lye is set to react with molybdenum layer, without being reacted with indium, gallium, after molybdenum layer is corroded, copper indium gallium selenide layer is made to be detached with backboard.It can be to being recycled by the copper-indium-gallium-selenium photovoltaic component of backboard of metal materials such as stainless steel plates using the present invention.Simultaneously because backboard is directly separated, to which the indium in copper indium gallium selenide layer powder left after separation, gallium, selenium element grade greatly improve.
Description
Technical field
The present invention relates to the recovery methods of a kind of copper-indium-gallium-selenium photovoltaic component more particularly to a kind of by copper-indium-gallium-selenium photovoltaic group
The method that copper indium gallium selenide layer in part is detached with photovoltaic module substrate.
Background technology
Copper-indium-galliun-selenium film solar cell has numerous advantages and much favored by the market, is film sun recent years
The maximum hot spot of the research and development of energy battery, large-scale production, application.The absorbed layer of copper indium gallium selenium solar cell is by copper, indium, gallium, selenium four
Kind element forms yellow copper structure according to optimal proportion, and absorbable spectral wavelength ranges are wide, in addition to non-crystal silicon solar cell can
Light absorbing limit of visible spectrum can also cover near infrared region of the wavelength between 700~2000nm, i.e., generate electricity in one day
Time longest, copper-indium-galliun-selenium film solar cell can surpass daily compared with the crystal silicon solar batteries of same wattage level
Go out the gross generation of 20% ratio.Crystal silicon battery substantially has the characteristic of photo attenuation, is exposed to the sun by the long-time of sunlight, hair
Electrical efficiency can fade.And copper indium gallium selenium solar cell is then without light induced attenuation characteristic, power generation stability height.The crystal silicon sun
There are hot spot phenomenons after longer period of time generates electricity for energy battery, cause generated energy small, increase maintenance cost.And copper indium gallium selenide
Solar cell can use inner connecting structure, the generation of this phenomenon be can avoid, compared with crystal silicon solar energy battery than required dimension
Shield expense is low.
The production method of copper-indium-galliun-selenium film solar cell has vacuum splashing and plating method, the way of distillation and antivacuum rubbing method, nothing
By which kind of production method is used, the waste material of some copper indium gallium selenide can be all generated in manufacturing process, and except containing weight in these waste materials
Except metallic copper, also contain the rare metals such as indium, gallium and selenium.To be conducive to the rare metals such as indium, gallium and selenium and heavy metal copper
Sustainable utilization is needed to be detached and is separately recovered, further recycled with facilitating, to ensure CIGS thin-film
The sustainable development of solar cell material.In the prior art, the recovery method of copper indium gallium selenide waste material mainly has acid-soluble method, extraction
It follows the example of, wet methods or the pyro-refining combined method such as oxidation distillation method.
A kind of recovery method of copper indium gallium selenide is disclosed in the Chinese patent application of Publication No. CN102296178A, specifically
Disclose using the mixed liquor of hydrochloric acid and hydrogen peroxide come dissolve include copper indium gallium selenide metal-powder method.This method uses
Hydrazine restores selenium, replaces copper with indium metal, and combine dispersion strip liquor to detach indium with gallium by brace type liquid film.
A kind of recovery method of copper indium gallium selenide, the party are disclosed in the Chinese patent application of Publication No. CN103184388A
Method is crushed the CIGS thin-film solar plate and fragmentates first, then using impregnating process by the fragment set point of temperature
Sulfuric acid and the mixed system of hydrogen peroxide impregnate the stipulated time and obtain soak, followed by extraction, back extraction, the works such as electrolysis
Skill recovery indium, gallium, selenium element.
U.S. Patent number US5779877 discloses a kind of recovery method of copper and indium Se solar cell waste material.The method
Main includes broken, nitric acid leaching, and two electrolysis detach copper, selenium and indium, and then evaporation, decomposition obtains the oxide of indium and zinc
Mixture, oxidation distillation detaches copper and selenium.
It can be seen that in the above-mentioned existing CIGS thin-film photovoltaic module recovery method having disclosed, first
To membrane photovoltaic component carry out it is broken form powder, then the method for acidleach is used to be dissolved, then to lysate at
Reason, from wherein recovery indium, gallium, selenium element.But the above-mentioned prior art is merely capable of for using glass as the copper indium gallium selenide of substrate
Photovoltaic module, maximum disadvantage are not being applied to for example using stainless steel as the flexible copper indium gallium selenide thin-film solar of substrate
Component, when the substrate using stainless steel as CIGS thin-film photovoltaic module, if using the method for acidleach will cause acid with
Stainless steel reaction finally causes indium, gallium, selenium element that can not recycle to contain a large amount of ferro elements in lysate.On the other hand
In existing recovery method, indium, gallium, the grade of selenium element are relatively low in lysate, influence subsequent organic efficiency.
Invention content
For the drawbacks described above in the presence of existing copper-indium-gallium-selenium photovoltaic component recovery method, it is an object of the invention to carry
For a kind of recovery method for the copper-indium-gallium-selenium photovoltaic component can be applied to stainless steel substrate, the present invention also aims to provide
A kind of method that can improve indium, gallium, selenium element grade.
In order to realize that the technique effect of the present invention, the present invention use following processing step：
A. break process：Copper-indium-gallium-selenium photovoltaic component is crushed and is fragmentated；
B. immersion treatment：Sodium hydroxide solution of the concentration range between 0.7 ~ 1mol/L is measured, the sodium hydroxide is molten
Liquid slowly heats, and above-mentioned fragment is put into the sodium hydroxide solution, and be passed through air, is impregnated；
C. the first filter progress：Using filter washing equipment to the mixed solution immersed with copper-indium-gallium-selenium photovoltaic component fragment
It is filtered washing, after filtration washing, it is clean substrate fragments, resin film and the copper conductor in surface to obtain leached mud；
D. the second filter progress：Using obtained by the first filter progress of filter washing equipment pair containing copper indium gallium selenide powder
Mixed solution is filtered washing again, and after filtration washing, obtained leached mud is that copper indium gallium selenide is enriched with powder；
E. the recovery processing of lye：It is dense to the sodium hydroxide of mixed liquor by the sodium hydroxide solution recycling containing molybdenum element
Degree is adjusted, and makes its range between 0.7 ~ 1mol/L, recycle the mixed liquor to copper-indium-gallium-selenium photovoltaic component fragment into
Row immersion treatment is electrolysed to recycle molybdenum the mixed liquor when the molybdenum element content in the mixed liquor reaches certain value；
F. the recovery processing of copper indium gallium selenide：Obtained copper indium gallium selenide is enriched with powder, after being dried to powder, is utilized
Copper, indium, gallium, selenium are separated and recovered using acid-soluble method, extraction, oxidation distillation method or combinations thereof.
Copper-indium-gallium-selenium photovoltaic component is fractured into size in 5 ~ 10cm in above-mentioned break process2Fragment.
Sodium hydroxide solution dosage and the relationship of copper indium gallium selenide fragment dosage are in above-mentioned immersion treatment：For every 100ml
The sodium hydroxide solution handles 10g copper-indium-gallium-selenium photovoltaic component fragments.
The temperature of sodium hydroxide solution maintains 70 ~ 90 DEG C in above-mentioned immersion treatment, keeps air logical in soaking process
Enter, soaking time is 2 ~ 5 hours.
In above-mentioned first filter progress, it is 10 mesh to filter used sieve.
In above-mentioned second filter progress, it is 120 mesh to filter used sieve.
In the recovery processing of lye, after the molybdenum content in caustic lye of soda reaches 10000ppm, to the sodium hydroxide
Liquid carries out electrolysis processing, recycles molybdenum element.
In the recovery processing of above-mentioned copper indium gallium selenide, to copper indium gallium selenide powder using acid-soluble method, extraction, oxidation distillation method
Or its combination is recycled, to recycle copper, indium, gallium and selenium element.
The substrate of above-mentioned copper-indium-gallium-selenium photovoltaic component is stainless steel.
The present invention will be crushed using the characteristic that can be reacted with alkali as the molybdenum layer of back electrode in copper-indium-gallium-selenium photovoltaic component
Copper-indium-gallium-selenium photovoltaic component fragment afterwards is immersed in lye, and controls the Pressure, Concentration, Temperature of lye, so that lye is occurred with molybdenum layer anti-
It answers, without being reacted with indium, gallium, after molybdenum layer is corroded, copper indium gallium selenide layer is made to be detached with substrate.Simultaneously because alkaline solution
It impregnates, the resin layer in copper-indium-gallium-selenium photovoltaic component can be removed with zinc oxide window electrode layer.
It, can be to being returned by the copper-indium-gallium-selenium photovoltaic component of substrate of metal materials such as stainless steel plates using the present invention
Receive, but be not limited to recycle the copper-indium-gallium-selenium photovoltaic component of stainless steel substrate, the present invention can be applied equally to
Glass is that the copper-indium-gallium-selenium photovoltaic component of substrate is recycled.Simultaneously because substrate is directly separated, to left after separation
Copper indium gallium selenide layer powder in indium, gallium, selenium element grade greatly improve.
Description of the drawings
Fig. 1 is the structural schematic diagram of the CIGS thin-film photovoltaic module in the present invention.
Fig. 2 is the schematic diagram that the copper-indium-gallium-selenium photovoltaic component after sodium hydroxide solution impregnates in the present invention decomposes.
Label in attached drawing：
1, substrate 2, molybdenum layer 3, copper indium gallium selenide layer 4, cadmium sulfide layer 5, zinc oxide film 6, resin layer
Specific implementation mode
Embodiment of the present invention is further elaborated below in conjunction with attached drawing.
In the embodiment of the present invention, to being recycled by the copper-indium-gallium-selenium photovoltaic component of substrate of stainless steel, specific recycling step
It is rapid as follows：
A. break process：Copper-indium-gallium-selenium photovoltaic component is broken into 5 ~ 10cm2The fragment of left and right；
B. immersion treatment：Measure 1000ml molar concentrations 0.7 ~ 1mol/L sodium hydroxide solution, by the sodium hydroxide
Solution is slowly heated up to 50 ~ 90 DEG C, above-mentioned fragment is put into the sodium hydroxide solution, and be passed through air, impregnates 2 ~ 5 hours；
C. the first filter progress：Using filter washing equipment to the mixed solution immersed with copper-indium-gallium-selenium photovoltaic component fragment
It is filtered washing, sieve pore grain size is set as 10 mesh, and after filtration washing, it is the clean stainless steel fragment in surface to obtain leached mud；
D. the second filter progress：Using obtained by the first filter progress of filter washing equipment pair containing copper indium gallium selenide powder
Mixed solution is filtered washing again, and sieve pore grain size is set as 120 molybdenums, and after filtration washing, obtained leached mud is copper and indium gallium
Se accumulation powder；
E. the recovery processing of lye：By the sodium hydroxide solution recycling containing molybdenum element, the concentration value of mixed liquor is carried out
Adjustment, makes its range between 0.7 ~ 1mol/L, recycles the mixed liquor and impregnated to copper-indium-gallium-selenium photovoltaic component fragment
Processing, after the molybdenum element content in the mixed liquor reaches 10000ppm, is electrolysed to recycle molybdenum element the mixed liquor；
F. the recovery processing of copper indium gallium selenide：Obtained copper indium gallium selenide is enriched with powder, after being dried to powder, is utilized
Acid-soluble method, extraction, oxidation distillation method or combinations thereof separate and recover copper, indium, gallium and selenium element.
Above example is only used for that the present invention is specifically described, and is not played to protection scope of the present invention any
Restriction effect, protection scope of the present invention are determined by claim.According to techniques known and disclosed in this invention
Technical solution, can derive or association goes out many variant schemes, all these variant schemes, also be regarded as be the present invention protection
Range.
Claims (9)
1. a kind of recovery method of copper-indium-gallium-selenium photovoltaic component, it is characterised in that include the following steps：
A. break process：Copper-indium-gallium-selenium photovoltaic component is crushed and is fragmentated；
B. immersion treatment：Sodium hydroxide solution of the concentration range between 0.7~1mol/L is measured, by the sodium hydroxide solution
Slowly heating, above-mentioned fragment is put into the sodium hydroxide solution, and be passed through air, is impregnated；
C. the first filter progress：Using filter washing equipment to the mixed solution progress immersed with copper-indium-gallium-selenium photovoltaic component fragment
Filtration washing, after filtration washing, it is clean substrate fragments, resin film and the copper conductor in surface to obtain leached mud；
D. the second filter progress：Use the mixing containing copper indium gallium selenide powder obtained by the first filter progress of filter washing equipment pair
Solution is filtered washing again, and after filtration washing, obtained leached mud is that copper indium gallium selenide is enriched with powder；
E. the recovery processing of lye：By the sodium hydroxide solution recycling containing molybdenum element, to the naoh concentration of mixed liquor into
Row adjustment, makes its range between 0.7~1mol/L, recycles the mixed liquor and is carried out to copper-indium-gallium-selenium photovoltaic component fragment
Immersion treatment is electrolysed to recycle molybdenum the mixed liquor when the molybdenum element content in the mixed liquor reaches certain value；
F. the recovery processing of copper indium gallium selenide：After obtained copper indium gallium selenide enrichment powder is dried, fractionation is utilized
Copper, indium, gallium, selenium are separated and recovered.
2. the recovery method of copper-indium-gallium-selenium photovoltaic component according to claim 1, it is characterised in that：In above-mentioned break process
Middle copper-indium-gallium-selenium photovoltaic component is fractured into size in 5-10cm2Fragment.
3. the recovery method of copper-indium-gallium-selenium photovoltaic component according to claim 1, it is characterised in that：In above-mentioned immersion treatment
The relationship of middle sodium hydroxide solution dosage and copper indium gallium selenide fragment dosage is：Per 100mL, the sodium hydroxide solution handles 10g copper and indiums
Gallium selenium photovoltaic module fragment.
4. the recovery method of copper-indium-gallium-selenium photovoltaic component according to claim 1, it is characterised in that:In above-mentioned immersion treatment
The temperature of middle sodium hydroxide solution maintains 70-90 DEG C, keeps air to be passed through in soaking process, and soaking time is 2~5 hours.
5. the recovery method of copper-indium-gallium-selenium photovoltaic component according to claim 1, it is characterised in that：In above-mentioned first filtering
In process, it is 10 mesh to filter used sieve.
6. the recovery method of copper-indium-gallium-selenium photovoltaic component according to claim 1, it is characterised in that：In above-mentioned second filtering
In process, it is 120 mesh to filter used sieve.
7. the recovery method of copper-indium-gallium-selenium photovoltaic component according to claim 1, it is characterised in that：At the recycling of lye
In reason, after the molybdenum content in caustic lye of soda reaches 10000ppm, electrolysis processing, recycling molybdenum member are carried out to the caustic lye of soda
Element.
8. the recovery method of copper-indium-gallium-selenium photovoltaic component according to claim 1, it is characterised in that:Above-mentioned copper indium gallium selenide
In recovery processing, copper indium gallium selenide powder is recycled using acid-soluble method, extraction, oxidation distillation method or its combination.
9. the recovery method of copper-indium-gallium-selenium photovoltaic component according to claim 1, it is characterised in that:Above-mentioned copper indium gallium selenide light
The substrate for lying prostrate component is stainless steel.
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| WO2018164578A1 (en) * | 2017-03-10 | 2018-09-13 | Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno | Combined metal recovery |
| CN108831995B (en) * | 2018-06-08 | 2022-07-29 | 东君新能源有限公司 | Method for separating organic layer in flexible assembly |
| CN109802005A (en) * | 2018-12-11 | 2019-05-24 | 汉能新材料科技有限公司 | The recovery method of thin-film solar cells chip |
| CN109513418B (en) * | 2019-01-03 | 2021-10-15 | 安庆师范大学 | Laminated assembled separation membrane and preparation method and application thereof |
| TWI792037B (en) * | 2020-08-14 | 2023-02-11 | 國立清華大學 | Recycling method for thin film solar cell |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5779877A (en) * | 1997-05-12 | 1998-07-14 | Drinkard Metalox, Inc. | Recycling of CIS photovoltaic waste |
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| CN104017995A (en) * | 2014-06-24 | 2014-09-03 | 株洲冶炼集团股份有限公司 | Method for recycling copper, indium, gallium and selenium from indium gallium selenium wastes containing copper |
| CN104018186A (en) * | 2014-06-24 | 2014-09-03 | 株洲冶炼集团股份有限公司 | Method for recovering copper, indium, gallium and selenium |
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| US5779877A (en) * | 1997-05-12 | 1998-07-14 | Drinkard Metalox, Inc. | Recycling of CIS photovoltaic waste |
| CN102296178A (en) * | 2010-06-25 | 2011-12-28 | 光洋应用材料科技股份有限公司 | Method for recovering copper, indium, gallium and selenium (CIGS) |
| CN104017995A (en) * | 2014-06-24 | 2014-09-03 | 株洲冶炼集团股份有限公司 | Method for recycling copper, indium, gallium and selenium from indium gallium selenium wastes containing copper |
| CN104018186A (en) * | 2014-06-24 | 2014-09-03 | 株洲冶炼集团股份有限公司 | Method for recovering copper, indium, gallium and selenium |
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