CN113419591B - Leakage current compensation structure, method, device and equipment based on band gap collector - Google Patents
Leakage current compensation structure, method, device and equipment based on band gap collector Download PDFInfo
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- CN113419591B CN113419591B CN202110836576.1A CN202110836576A CN113419591B CN 113419591 B CN113419591 B CN 113419591B CN 202110836576 A CN202110836576 A CN 202110836576A CN 113419591 B CN113419591 B CN 113419591B
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- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The invention is suitable for the technical field of electronic circuits, and provides a leakage current compensation structure, a method and a device based on a band gap collector and computer equipment, wherein the leakage current compensation structure comprises the following steps: the band gap collector unit comprises a first triode and N second triodes, the base electrodes of the N second triodes are connected with the base electrode of the first triode, the collector electrodes of the N second triodes and the collector electrode of the first triode are connected with a bias current input end Iin, the emitting electrodes of the N second triodes are grounded through a first resistor, and the emitting electrode of the first triode is grounded; and the current compensation unit comprises M third triodes, wherein the emitting electrodes, the bases and the collectors of the third triodes are connected with the collectors of the first triodes after being in short circuit, and M is equal to N-1. The voltage at two ends of the first resistor is always kept constant, so that the band gap collector can keep an ideal temperature compensation effect in a higher temperature range, and the chip can work in the higher temperature range.
Description
Technical Field
The invention belongs to the technical field of electronic circuits, and particularly relates to a leakage current compensation structure, method and device based on a band gap collector and electronic equipment.
Background
In the BCD process, a longitudinal NPN device is often used as a band gap collector, and delta V is utilizedBE＝VTPTAT voltage positive temperature characteristic of lnN and VBEThe negative temperature characteristics of themselves compensate each other, resulting in a constant reference voltage that does not vary with temperature variations.
However, due to the parasitic diode between the collector of the vertical NPN and the substrate PSUB, the constant reference voltage is severely deviated at high temperature, so that the chip can work in a higher temperature range and cannot work normally.
Disclosure of Invention
The embodiment of the invention provides a leakage current compensation structure based on a band gap collector, aiming at solving the problem that the band gap collector is seriously deviated at high temperature.
The embodiment of the invention is realized in such a way that a leakage current compensation structure based on a band gap collector comprises:
the band gap collector unit comprises a first triode and N second triodes, the base electrodes of the N second triodes are connected with the base electrode of the first triode, the collector electrodes of the N second triodes and the collector electrode of the first triode are connected with a bias current input end Iin, the emitting electrodes of the N second triodes are grounded through a first resistor, and the emitting electrode of the first triode is grounded;
and the current compensation unit comprises M third triodes, wherein the emitting electrodes, the bases and the collectors of the third triodes are connected with the collectors of the first triodes after being in short circuit, and M is equal to N-1.
Furthermore, the first transistor, the second transistor and the third transistor are NPN transistors.
In a second aspect, the present application further provides a leakage current compensation control method based on a bandgap collector, including:
acquiring first leakage current and second leakage current of the band-gap collector unit, wherein the first leakage current is the leakage current of a first triode of the band-gap collector unit, and the second leakage current is the sum of the leakage currents of N second triodes of the band-gap collector unit;
calculating according to the first leakage current and the second leakage current to generate current compensation information;
and controlling M third triodes to be connected into a band gap collector unit according to the current compensation information and preset leakage current information of the parasitic diode, so that an emitter, a base and a collector of the third triode are connected with a collector of the first triode after being in short circuit, wherein M is N-1.
Furthermore, the step of controlling the M third triodes to be connected to the bandgap collector unit according to the current compensation information and the preset parasitic diode leakage current information includes:
calculating according to the current compensation information and the leakage current information of the parasitic diode to generate the access number of the third triode;
and controlling the switches corresponding to the access quantity to be closed so that the collector electrodes of the third triodes corresponding to the access quantity are connected with the collector electrode of the first triode.
Further, the first transistor, the second transistor and the third transistor are NPN transistors.
In a third aspect, the present application further provides a leakage current compensation control device based on a bandgap collector, including:
the first obtaining module is used for obtaining a first leakage current and a second leakage current of the band-gap collector unit, wherein the first leakage current is the leakage current of a first triode of the band-gap collector unit, and the second leakage current is the sum of the leakage currents of N second triodes of the band-gap collector unit;
the first processing module is used for calculating according to the first leakage current and the second leakage current to generate current compensation information;
and the first execution module is used for controlling M third triodes to be connected into the band gap collector unit according to the current compensation information and preset leakage current information of the parasitic diode, so that an emitter, a base and a collector of the third triode are connected with a collector of the first triode after being in short circuit, wherein M is N-1.
Further, the collector of each third transistor is connected to the collector of the first transistor through a switch, and the apparatus further comprises:
the first processing submodule is used for calculating and generating the access quantity of the third triode according to the current compensation information and the leakage current information of the parasitic diode;
and the first execution submodule is used for controlling the switches corresponding to the access quantity to be closed so as to connect the collector electrodes of the third triodes corresponding to the access quantity with the collector electrode of the first triode.
Further, the first transistor, the second transistor and the third transistor are NPN transistors.
In a fourth aspect, the present application also provides a computer device comprising a memory, a processor and a computer program stored in the memory and executable on the processor, wherein the processor implements the steps of the method as described above when executing the computer program.
In a fifth aspect, the present application further provides a computer-readable storage medium, in which a computer program is stored, which, when being executed by a processor, realizes the steps of the method as described above.
The embodiment of the application forms band gap collector unit through a first triode and a N second triode, rethread current compensation unit includes a M third triode, the projecting pole of every third triode, base and collector short circuit, the collecting electrode of M third triode still is connected with the collecting electrode of first triode, and the quantity of third triode is the difference between second triode and the first triode, thereby make the sum of the leakage current of third triode and first triode, equal to the sum of the leakage current of a N second triode, the voltage that leads to first resistance both ends is a constant all the time, make the band gap collecting electrode can keep ideal temperature compensation effect in higher temperature range, thereby guarantee that the chip can work in higher temperature range.
Drawings
FIG. 1 is a schematic structural diagram of an embodiment of a leakage current compensation structure based on a bandgap collector according to the present application;
fig. 2 is a schematic cross-sectional view of an NPN transistor;
FIG. 3 is a circuit diagram symbol of an ideal NPN-type triode;
fig. 4 is a circuit diagram symbol of an actual NPN type triode;
FIG. 5 is a schematic diagram of an ideal NPN bandgap collector core;
FIG. 6 is a schematic diagram of an actual NPN bandgap collector core;
FIG. 7 is a schematic diagram of a diode reverse leakage current provided by the prior art;
FIG. 8 is a schematic diagram of diode reverse leakage current for a bandgap collector based leakage current compensation structure provided herein;
fig. 9 is a schematic flowchart of a leakage current compensation control method based on a bandgap collector provided in the present application;
FIG. 10 is a flow chart illustrating a process of controlling the connection of the second transistor to the second transistor according to an embodiment of the present disclosure
Fig. 11 is a block diagram of a leakage current compensation control device based on a bandgap collector according to the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In some alternative embodiments, please refer to fig. 1, fig. 1 is a schematic structural diagram of an embodiment of a leakage current compensation structure based on a bandgap collector according to the present application.
As shown in fig. 1, a first aspect of the present application provides a leakage current compensation structure based on a bandgap collector, which includes a bandgap collector unit and a current compensation unit;
the band gap collector unit comprises a first triode Q1 and N second triodes Q2, the base electrodes of the N second triodes Q2 are connected with the base electrode of the first triode Q1, the collector electrodes of the N second triodes Q2 and the collector electrode of the first triode Q1 are connected with a bias current input end Iin, the emitter electrodes of the N second triodes Q2 are grounded through a first resistor R1, and the emitter electrode of the first triode Q1 is grounded; the current compensation unit comprises M third triodes Q3, wherein an emitting electrode, a base electrode and a collector electrode of the third triode Q3 are connected with a collector electrode of the first triode Q1 after being short-circuited, and M is equal to N-1.
In some embodiments, the first transistor Q1, the second transistor Q2, and the third transistor Q3 are NPN transistors. Referring to fig. 2 to 4, fig. 2 is a schematic cross-sectional structure diagram of an NPN transistor, fig. 3 is a circuit diagram symbol of an ideal NPN transistor, fig. 4 is a circuit diagram symbol of an actual NPN transistor, as shown in fig. 2, B is a base of the transistor, E is an emitter of the transistor, C is a collector of the transistor, fig. 4 has one more base material end than fig. 3, and there is also one more backward diode between the collector C and the P-type base material PSUB in the model. In the collector with a gap, fig. 5 is a schematic diagram of an ideal NPN bandgap collector core, fig. 6 is a schematic diagram of an actual NPN bandgap collector core, fig. 7 is a schematic diagram of a reverse leakage current of a conventional diode, fig. 8 is a schematic diagram of a reverse leakage current of a diode based on the leakage current compensation structure of the bandgap collector, where the number of the first transistors Q1 is 1, and the number of the second transistors Q2 is N, in fig. 6, taking N as 8 as an example, each transistor corresponds to 1 parasitic diode, so that the number m of the reverse diodes of the first transistor Q1 is 1, and the number m of the reverse diodes of the N second transistors Q2 is 8.
In some embodiments, in fig. 7, the same bias current I0 is applied to the first transistor Q1 and the N second transistors Q2 from the bias current input Iin, which ideally results in a PTAT voltage across the first resistor R1 expressed as Δ VBE＝VTlnN, where N is the ratio of the number of the second transistor Q2 and the first transistor Q1, and taking N as 8 as an example, the leakage current of the parasitic diode is different due to the existence of the parasitic diode and the difference between the number of the second transistor Q2 and the number of the first transistor Q1. Since m of the second transistor Q2 is 8, the leakage current with an NPN is IRFor example, the leakage current is equal to 8 × IR(ii) a Then, for the first transistor Q1, m is 1, and its leakage current is IR. The current flowing through the second transistor Q2 and the collector of the first transistor Q1 is changed from 1: 1 is changed into (I)0-IR):(I0-8*IR) Let the expression for the PTAT voltage be:
secondly, the reverse leakage current of the diode varies with the temperature, and increases rapidly when the temperature rises to a certain degree, resulting in
Not a constant.
In fig. 8, a current compensation unit is added to a branch of the first transistor Q1, and the current compensation unit includes M third transistors Q3, where M is N-1 is 7. The collector, base and emitter of the third transistor Q3 are shorted together and connected in parallel to the collector of the first transistor Q2, and the third transistor Q3 does not affect the normal operation of the bandgap collector core, but due to the presence of the third transistor Q3, the number of parasitic diodes from the collector of the first transistor Q1 to the substrate PSUB is 7+1 to 8, which is exactly the same as the number of parasitic diodes from the collector of the N second transistors Q2 to the substrate PSUB. With respect to fig. 8, the same applies to the collectors of the second transistor Q2 and the first transistor Q1Applying the same bias current I0The current flowing through the collectors of the first transistor Q1 and the second transistor Q2 is I0-(7+1)*IRAnd I0-8*IRThe two are equal. The modified PTAT voltage is always a constant Δ VBE＝VTln8。
This application constitutes band gap collector unit through a first triode Q1 and a N second triode Q2, rethread current compensation unit includes M third triode Q3, every third triode Q3's projecting pole, the base and the collector short circuit, M third triode Q3's collecting electrode still is connected with first triode Q1's collecting electrode, and the quantity of third triode Q3 is the difference between second triode Q2 and first triode Q1, thereby make the sum of the leakage current of third triode Q3 and first triode Q1, equal to N second triode Q2's the sum of leakage current, lead to the voltage at first resistance R1 both ends to be a constant all the time, make the band gap collector can keep ideal temperature compensation effect in higher temperature range, thereby guarantee that the chip can work in higher temperature range.
In some alternative embodiments, please refer to fig. 9, fig. 9 is a flowchart illustrating a leakage current compensation control method based on a bandgap collector according to the present application.
As shown in fig. 9, the leakage current compensation control method based on a bandgap collector provided by the present application includes:
s1100, acquiring first leakage current and second leakage current of the band-gap collector unit, wherein the first leakage current is the leakage current of a first triode Q1 of the band-gap collector unit, and the second leakage current is the sum of the leakage currents of N second triodes Q2 of the band-gap collector unit;
in implementation, the leakage current compensation control method based on the bandgap collector provided by the present application is applied to the leakage current compensation structure based on the bandgap collector, the leakage current compensation structure based on the bandgap collector includes a bandgap collector unit and a current compensation unit, the bandgap collector unit includes a first transistor Q1 and N second transistors Q2, and the system obtains a first leakage current and a second leakage current by detecting the leakage currents of the first transistor Q1 and the N second transistors Q2.
S1200, calculating according to the first leakage current and the second leakage current to generate current compensation information;
and S1300, controlling M third triodes Q3 to be connected to a band gap collector unit according to the current compensation information and preset parasitic diode leakage current information, so that an emitter, a base and a collector of the third triode Q3 are connected with a collector of the first triode Q1 after being in short circuit, wherein M is N-1.
The system calculates according to the first leakage current and the second leakage current, wherein the first transistor Q1, the second transistor Q2 and the third transistor Q3 are NPN transistors. In operation, a bias current I is applied to the collectors of the N second transistors Q20And applies the same bias current I to the collector of the first transistor Q10Ideally, a PTAT voltage is generated across the first resistor R1, which is expressed as Δ VBE＝VTlnN, the ratio of the number of the second transistor Q2 to the number of the first transistor Q1 is N, and taking N-8 as an example, the leakage current of the parasitic diodes is different due to the existence of the parasitic diodes and the difference of the numbers of the second transistor Q2 and the first transistor Q1. Since m of the first transistor Q1 is 1, m represents the number of parasitic diodes, I represents a leakage current of an NPNRFor example, the first leakage current is IRN second transistors Q2 have N parasitic diodes in common, where N is 8, and the second leakage current is equal to 8 × IR. Calculating a compensation current corresponding to the current compensation information to be 7 xI according to the first leakage current and the second leakage currentRAnd further calculating according to the current compensation information and the leakage current information of the parasitic diode to obtain the number of third triodes Q3 needing to be added into the band gap collector unit, wherein the leakage current information of the parasitic diode is mapped to an NPN leakage current IRIf the number of the third triodes Q3 needing to be connected into the bandgap collector unit is 7, the system controls the 7 third triodes Q3 to be connected into the bandgap collector unit, so that the collectors of the 7 third triodes Q3 are connected with the collector of the first triode Q1 after being short-circuited, the emitter, the base and the collector of each third triode Q3 are short-circuited, and for the third triode Q3The number of parasitic diodes from the collector of the transistor Q1 to the substrate PSUB is 7+1 to 8, which is exactly the same as the number of parasitic diodes from the collector of the N second transistors Q2 to the substrate PSUB. The same bias current I is also applied to the collectors of the second transistor Q2 and the first transistor Q10At this time, the currents flowing through the collectors of the first transistor Q1 and the second transistor Q2 are I0-(7+1)*IRAnd I0-8*IRThe two are equal, so the modified PTAT voltage is always a constant Δ VBE＝VTln 8. The band gap collector can keep an ideal temperature compensation effect in a higher temperature range, so that the chip can work in the higher temperature range.
In some alternative embodiments, the collector of each third transistor Q3 is connected to the collector of the first transistor Q1 through a switch, referring to fig. 10, fig. 10 is a schematic flow chart of an embodiment of the present application for controlling the connection of the third transistor Q3 to the first transistor Q1.
As shown in fig. 10, the step of controlling the M third transistors Q3 to access the bandgap collector unit according to the current compensation information and the preset parasitic diode leakage current information includes:
s1310, calculating according to the current compensation information and the leakage current information of the parasitic diode to generate the access number of the third triode Q3;
and S1310, controlling the switches corresponding to the access numbers to be closed so that the collectors of the third audion Q3 corresponding to the access numbers are connected with the collector of the first audion Q1.
In implementation, for each third transistor Q3, the collector of the third transistor Q3 is connected to the collector of the first transistor Q1 through a switch, and taking the example that the collector of the third transistor Q3 is connected to the collector of the first transistor Q1 through a switch tube, the system controls the number of the third transistor Q3 connected to the bandgap collector unit by controlling the on/off of the switch tube, for example, the collector of 2 third transistors Q3 needs to be connected to the collector of the first transistor Q1, and the system only needs to control the two switch tubes to be closed.
In some alternative embodiments, please refer to fig. 11, fig. 11 is a block diagram illustrating a bandgap collector based leakage current compensation control apparatus provided herein.
As shown in fig. 11, the present application also provides a leakage current compensation control device based on a bandgap collector, including:
the first obtaining module 2100 is configured to obtain a first leakage current and a second leakage current of the bandgap collector unit, where the first leakage current is a leakage current of a first triode Q1 of the bandgap collector unit, and the second leakage current is a sum of leakage currents of N second triodes Q2 of the bandgap collector unit;
the first processing module 2200 is configured to calculate according to the first leakage current and the second leakage current to generate current compensation information;
the first execution module 2300 is configured to control, according to the current compensation information and preset parasitic diode leakage current information, the M third transistors Q3 to access the bandgap collector unit, so that an emitter, a base, and a collector of the third transistor Q3 are connected to a collector of the first transistor Q1 after being shorted, where M is N-1.
This application constitutes band gap collector unit through a first triode Q1 and a N second triode Q2, rethread current compensation unit includes M third triode Q3, every third triode Q3's projecting pole, the base and the collector short circuit, M third triode Q3's collecting electrode still is connected with first triode Q1's collecting electrode, and the quantity of third triode Q3 is the difference between first triode Q1 and second triode Q2, thereby make the sum of the leakage current of third triode Q3 and first triode Q1, equal to N second triode Q2's the sum of leakage current, lead to the voltage at first resistance R1 both ends to be a constant all the time, make the band gap collector can keep ideal temperature compensation effect in higher temperature range, thereby guarantee that the chip can work in higher temperature range.
In some alternative embodiments, the collector of each third transistor Q3 is connected to the collector of the first transistor Q1 through a switch, and the bandgap collector based leakage current compensation control apparatus provided herein further includes:
the first processing submodule is used for calculating and generating the access quantity of the third triode Q3 according to the current compensation information and the leakage current information of the parasitic diode;
and the first execution submodule is used for controlling the switches corresponding to the access numbers to be closed so that the collectors of the third triode Q3 corresponding to the access numbers are connected with the collector of the first triode Q1.
In some optional embodiments, the first transistor Q1, the second transistor Q2, and the third transistor Q3 in the bandgap collector based leakage current compensation control apparatus provided herein are NPN transistors.
The implementation principle and the generated technical effect of the leakage current compensation control device based on the bandgap collector provided by the embodiment of the present invention are the same as those of the foregoing method embodiments, and for the sake of brief description, no mention is made in the device embodiment, and reference may be made to the corresponding contents in the foregoing method embodiments.
In some optional embodiments, the present application further provides a computer device comprising a memory, a processor and a computer program stored in the memory and executable on the processor, the processor implementing the steps of the method as described above when executing the computer program.
In some alternative embodiments, the present application further provides a computer readable storage medium storing a computer program which, when executed by a processor, implements the steps of the method as described above.
Illustratively, a computer program can be partitioned into one or more modules, which are stored in memory and executed by a processor to implement the present invention. One or more of the modules may be a sequence of computer program instruction segments for describing the execution of a computer program in a computer device that is capable of performing certain functions. For example, the computer program may be divided into the steps of the food safety classification method provided by the various method embodiments described above.
Those skilled in the art will appreciate that the above description of a computer apparatus is by way of example only and is not intended to be limiting of computer apparatus, and that the apparatus may include more or less components than those described, or some of the components may be combined, or different components may be included, such as input output devices, network access devices, buses, etc.
The Processor may be a Central Processing Unit (CPU), other general purpose Processor, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), an off-the-shelf Programmable Gate Array (FPGA) or other Programmable logic device, discrete Gate or transistor logic, discrete hardware components, etc. The general purpose processor may be a microprocessor or the processor may be any conventional processor or the like which is the control center for the computer device and which connects the various parts of the overall computer device using various interfaces and lines.
The memory may be used to store the computer programs and/or modules, and the processor may implement various functions of the computer device by running or executing the computer programs and/or modules stored in the memory and invoking data stored in the memory. The memory may mainly include a storage program area and a storage data area, wherein the storage program area may store an operating system, an application program required by at least one function (such as a sound playing function, an image playing function, etc.), and the like; the storage data area may store data (such as audio data, a phonebook, etc.) created according to the use of the cellular phone, and the like. In addition, the memory may include high-speed random access memory, and may also include non-volatile memory, such as a hard disk, a memory, a plug-in hard disk, a Smart Media Card (SMC), a Secure Digital (SD) Card, a Flash memory Card (Flash Card), at least one magnetic disk storage device, a Flash memory device, or other volatile solid state storage device.
The modules/units integrated by the computer device may be stored in a computer-readable storage medium if they are implemented in the form of software functional units and sold or used as separate products. Based on such understanding, all or part of the flow of the method according to the embodiments of the present invention may also be implemented by a computer program, which may be stored in a computer-readable storage medium, and when the computer program is executed by a processor, the steps of the method embodiments may be implemented. Wherein the computer program comprises computer program code, which may be in the form of source code, object code, an executable file or some intermediate form, etc. The computer-readable medium may include: any entity or device capable of carrying the computer program code, recording medium, usb disk, removable hard disk, magnetic disk, optical disk, computer Memory, Read-Only Memory (ROM), Random Access Memory (RAM), electrical carrier wave signals, electrical signals, software distribution medium, and the like.
This application constitutes band gap collector unit through a first triode Q1 and a N second triode Q2, rethread current compensation unit includes M third triode Q3, every third triode Q3's projecting pole, the base and the collector short circuit, M third triode Q3's collecting electrode still is connected with first triode Q1's collecting electrode, and third triode Q3's quantity is the difference between second triode Q2 and first triode Q1, thereby make the sum of the leakage current of third triode Q3 and first triode Q1, equal second triode Q2's leakage current, lead to the voltage at first resistance R1 both ends to be a constant all the time, make the band gap collector can keep ideal temperature compensation effect in higher temperature range, thereby guarantee that the chip can work in higher temperature range.
The present invention is not limited to the above preferred embodiments, and any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A control method of a leakage current compensation structure based on a band gap collector is characterized in that:
the leakage current compensation structure includes:
the band gap collector unit comprises a first triode and N second triodes, the base electrodes of the N second triodes are connected with the base electrode of the first triode, the collector electrodes of the N second triodes and the collector electrode of the first triode are connected with a bias current input end Iin, the emitter electrodes of the N second triodes are grounded through a first resistor, the emitter electrode of the first triode is grounded, and the base electrode and the collector electrode of the first triode are connected;
the current compensation unit comprises M third triodes, and an emitter, a base and a collector of each third triode are connected with a collector of the first triode after being in short circuit;
the control method for the leakage current compensation structure based on the band gap collector comprises the following steps:
acquiring first leakage current and second leakage current of a band-gap collector unit, wherein the first leakage current is the leakage current of a first triode of the band-gap collector unit, and the second leakage current is the sum of the leakage currents of N second triodes of the band-gap collector unit;
calculating according to the first leakage current and the second leakage current to generate current compensation information;
and controlling M third triodes to be connected to the band gap collector unit according to the current compensation information and preset leakage current information of the parasitic diode, so that an emitter, a base and a collector of the third triode are connected with a collector of the first triode after being in short circuit, wherein M = N-1 and N = 8.
2. The method of claim 1, wherein the first transistor, the second transistor, and the third transistor are NPN transistors.
3. The method as claimed in claim 1, wherein the step of controlling the M third triodes to be connected to the bandgap collector unit according to the current compensation information and the predetermined parasitic diode leakage current information comprises:
calculating according to the current compensation information and the leakage current information of the parasitic diode to generate the access number of the third triode;
and controlling the switches corresponding to the access number to be closed so that the collector electrode of the third triode corresponding to the access number is connected with the collector electrode of the first triode.
4. A control device based on a leakage current compensation structure of a band gap collector is characterized in that:
the leakage current compensation structure includes:
the band-gap collector unit comprises a first triode and N second triodes, the base electrodes of the N second triodes are connected with the base electrode of the first triode, the collector electrodes of the N second triodes and the collector electrode of the first triode are connected with a bias current input end Iin, the emitter electrodes of the N second triodes are grounded through a first resistor, the emitter electrode of the first triode is grounded, and the base electrode and the collector electrode of the first triode are connected;
the current compensation unit comprises M third triodes, and an emitter, a base and a collector of each third triode are connected with a collector of the first triode after being in short circuit;
the control device includes:
the first obtaining module is used for obtaining a first leakage current and a second leakage current of the band-gap collector unit, wherein the first leakage current is the leakage current of a first triode of the band-gap collector unit, and the second leakage current is the sum of the leakage currents of N second triodes of the band-gap collector unit;
the first processing module is used for calculating according to the first leakage current and the second leakage current to generate current compensation information;
and the first execution module is used for controlling M third triodes to be connected to the band-gap collector unit according to the current compensation information and preset leakage current information of the parasitic diode, so that an emitter, a base and a collector of the third triode are connected with a collector of the first triode after being in short circuit, wherein M = N-1, and N = 8.
5. The apparatus for controlling a bandgap collector based leakage current compensation scheme as claimed in claim 4, wherein the collector of each of said third transistors is connected to the collector of said first transistor through a switch, said apparatus further comprising:
the first processing submodule is used for calculating and generating the access quantity of the third triode according to the current compensation information and the leakage current information of the parasitic diode;
and the first execution submodule is used for controlling the switches corresponding to the access number to be closed so as to connect the collector electrode of the third triode corresponding to the access number with the collector electrode of the first triode.
6. The apparatus for controlling a bandgap collector based leakage current compensation scheme as claimed in claim 4, wherein said first, second and third transistors are NPN transistors.
7. A computer device comprising a memory, a processor and a computer program stored in said memory and executable on said processor, characterized in that said processor implements the steps of the method of controlling a bandgap collector based leakage current compensation structure as claimed in any one of claims 1 to 3 when executing said computer program.
8. A computer-readable storage medium storing a computer program, wherein the computer program is executed by a processor to implement the steps of the method for controlling a bandgap collector based leakage current compensation structure as claimed in any one of claims 1 to 3.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110836576.1A CN113419591B (en) | 2021-07-23 | 2021-07-23 | Leakage current compensation structure, method, device and equipment based on band gap collector |
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| CN115857612B (en) * | 2023-03-02 | 2023-05-09 | 盈力半导体(上海)有限公司 | Band gap reference source and low temperature drift control method, system and chip thereof |
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| CN102354245B (en) * | 2011-08-05 | 2013-06-12 | 电子科技大学 | Band gap voltage reference source |
| CN208335046U (en) * | 2018-07-10 | 2019-01-04 | 成都信息工程大学 | A kind of smoothed temperature compensation band gap reference source circuit |
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| CN111427410B (en) * | 2020-04-22 | 2022-05-20 | 中国科学院微电子研究所 | Band gap reference circuit |
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