CN113410341A - Preparation method of silicon oxide passivation layer - Google Patents
Preparation method of silicon oxide passivation layer Download PDFInfo
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- CN113410341A CN113410341A CN202110688134.7A CN202110688134A CN113410341A CN 113410341 A CN113410341 A CN 113410341A CN 202110688134 A CN202110688134 A CN 202110688134A CN 113410341 A CN113410341 A CN 113410341A
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- 238000002161 passivation Methods 0.000 title claims abstract description 45
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 229910052814 silicon oxide Inorganic materials 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 87
- 229910052710 silicon Inorganic materials 0.000 claims description 87
- 239000010703 silicon Substances 0.000 claims description 87
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 39
- 239000000243 solution Substances 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 32
- 230000003071 parasitic effect Effects 0.000 claims description 18
- 239000011259 mixed solution Substances 0.000 claims description 12
- 239000008367 deionised water Substances 0.000 claims description 10
- 229910021641 deionized water Inorganic materials 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 238000007667 floating Methods 0.000 claims description 9
- 238000002791 soaking Methods 0.000 claims description 9
- 239000010453 quartz Substances 0.000 claims description 8
- -1 alkyl naphthalene sulfonate Chemical compound 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- 239000004094 surface-active agent Substances 0.000 claims description 5
- 229920001732 Lignosulfonate Polymers 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 239000010445 mica Substances 0.000 claims description 2
- 229910052618 mica group Inorganic materials 0.000 claims description 2
- 239000003208 petroleum Substances 0.000 claims description 2
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 4
- 238000004140 cleaning Methods 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 abstract description 40
- 230000003647 oxidation Effects 0.000 abstract description 38
- 239000000463 material Substances 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 238000012545 processing Methods 0.000 abstract description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 230000002035 prolonged effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a preparation method of a silicon oxide passivation layer, which belongs to the technical field of crystal material processing and aims at solving the problems that the effect of heterogeneous passivation is not ideal at present and the performance of a device is deteriorated by a passivation layer obtained in an oxidation mode.
Description
Technical Field
The invention belongs to the technical field of crystal material processing, and particularly relates to a method for improving the surface performance of a silicon wafer.
Background
The silicon-based solar cell has received wide attention due to low cost of raw materials, simple preparation process, high photoelectric conversion efficiency of devices and stable performance, and becomes a dominant product in the current photovoltaic market. The research and development of novel silicon-based photovoltaic devices, the exploration of new technologies and new processes have important values for promoting the development of the photovoltaic industry.
The photoelectric conversion efficiency and stability of the silicon-based photovoltaic device mainly depend on the characteristics of a key interface of the device, the recombination loss of the interface is effectively reduced, and the key point for improving the photovoltaic performance is to improve the transfer efficiency of photo-generated charges. Research shows that due to the interruption of the lattice structure, a large number of dangling bond defects exist on the surface of the silicon wafer, and the defects are used as deep-level recombination centers, so that a large number of photon-generated carriers can be captured, and the photovoltaic performance of the device is deteriorated. Therefore, high quality passivation of the silicon wafer surface is an important factor in obtaining high performance devices.
Most of the existing developed passivation technologies are used for saturating dangling bond defects by depositing a layer of heterogeneous material on the surface of a silicon wafer; or a thicker oxide layer is generated on the surface of the silicon wafer through a single oxidation mode. However, the effect of the heterogeneous passivation is not ideal at present because of larger lattice mismatch and stress between the silicon wafer and the heterogeneous material; the thicker passivation layer obtained by oxidation severely hinders the transmission of photo-generated charges, and the thickness of the oxide layer is difficult to control uniformly, thereby deteriorating the performance of the device. Therefore, developing a simple, effective and low-cost silicon wafer passivation technology is a key problem to be solved urgently at present.
Disclosure of Invention
Aiming at the defects and shortcomings in the prior art, the invention aims to provide the preparation method of the silicon oxide passivation layer, which is simple in process, easy to implement, capable of flexibly controlling the thickness of the passivation layer and applicable to various silicon-based photovoltaic devices.
The technical scheme adopted by the invention is as follows:
a method of preparing a silicon oxide passivation layer, the method comprising:
(1) soaking the cleaned silicon wafer in HF with the concentration of 1% for 2min to remove a parasitic oxide layer on the surface;
(2) transferring the silicon wafer with the parasitic oxide layer removed into a transparent tank filled with a mixed solution of deionized water and a surfactant to ensure that the liquid level is over the silicon wafer, and introducing ozone gas with the concentration of 40ppm into the bottom of the tank to ensure that a large amount of bubbles floating upwards are generated in the solution;
(3) carrying out ultrasonic vibration treatment on the bottom of the tank body to decompose the introduced ozone bubbles into ultra-small bubbles, so that the ultra-small bubbles can uniformly roll upwards on the surface of the silicon wafer, and keeping the process for 1-5 min;
(4) continuously keeping ultrasonic vibration, and simultaneously setting the optical power to be 100-500 mW/cm2The ultraviolet light irradiates the surface of the silicon wafer for 5-15 min, and under the combined action of ozone, ultrasonic vibration and strong light irradiation, uniform and controllable oxidation is realized, so that a pre-oxidation layer is generated on the surface of the silicon wafer;
(5) the luminous power density is improved, and the luminous power is 1000-2000 mW/cm2The light irradiates the silicon wafer for 5-15 min, and the oxidation strength and uniformity are enhanced by secondary strong light irradiation, so that a high-quality silicon oxide passivation layer is generated on the surface of the silicon wafer.
Wherein, the transparent groove body in the step (2) can be made of quartz, mica, glass and organic glass; the surfactant is one of N-oleoyl polyamino acid sodium, alkyl naphthalene sulfonate, petroleum sulfonate and lignosulfonate; the concentration of the mixed solution was 5% by weight.
Further, the temperature of the solution in the steps (1), (2) and (3) is 0-40 ℃.
Further, the flow rate of the ozone gas in the step (2) is between 1sccm and 100 sccm.
Further, the ultrasonic power in the step (3) should be between 10 and 100W.
Further, the temperature of the solution in the steps (4) and (5) is 0-90 ℃.
Preferably, the silicon wafer is vertically fixed in the transparent groove body, and ultraviolet light irradiates the surface of the silicon wafer from two sides of the silicon wafer.
The invention has the advantages and positive effects that:
the invention firstly controls the whole oxidation process in the mixed solution of deionized water and surfactant, which not only avoids the contact between the silicon chip and the outside air and blocks the path of bad oxidation, but also has lower technical cost compared with the existing vacuum oxidation method, high temperature oxidation method and wet heat oxidation method. The introduction of ultrasonic vibration can ensure high dispersion degree of ozone gas, and make the silicon wafer in a micro-vibration state, thereby improving the uniformity of oxidation. Meanwhile, the strong light irradiation has a dynamic process capable of fully and finely modulating the whole oxidation reaction, and plays a role in chemical catalysis, and specifically comprises the following steps: firstly, starting low-intensity light irradiation to ensure that the surface of a silicon wafer and ozone gas are subjected to uniform oxidation reaction to form a pre-oxidation layer; the second high intensity light irradiation can effectively accelerate the oxidation rate and quickly generate a complete silicon oxide passivation layer. The multidimensional modulation silicon oxide passivation process avoids high-cost and high-energy consumption processes such as vacuum, high temperature and the like, simultaneously eliminates bad oxidation generated by outside air, increases the uniformity and controllability of oxidation, effectively improves the quality of an oxidation layer, improves the surface characteristic of a silicon wafer, and reduces the defect density of dangling bonds. The passivation method provided by the invention has the advantages of simple process and easy implementation, and can flexibly control the thickness of the passivation layer, effectively improve the interface quality of the silicon-based solar cell and improve the photovoltaic performance of the device.
Drawings
FIG. 1 is a schematic view of a device for preparing a passivation layer of silicon oxide
FIG. 2 is a minority carrier lifetime map of a silicon wafer according to embodiment 1 of the present invention;
FIG. 3 is a minority carrier lifetime map of a silicon wafer according to embodiment 2 of the present invention;
FIG. 4 is a minority carrier lifetime map of a silicon wafer according to embodiment 3 of the present invention.
Detailed Description
The technical solution of the present invention will be further described in detail with reference to the accompanying drawings and specific embodiments.
As shown in fig. 1, the apparatus for implementing the preparation method of the present invention comprises a transparent tank, a through hole for introducing ozone gas is arranged at the bottom of the tank, and the through hole is connected with a gas flow control valve; the bottom of the tank body is arranged in the ultrasonic generator, and a silicon wafer mounting rack is arranged in the tank body and used for fixing a silicon wafer; ultraviolet light sources are arranged on two sides of the groove body and are opposite to two sides of the silicon wafer for irradiation.
Example 1:
1. soaking the cleaned silicon wafer in HF with the concentration of 1% for 2min to remove a parasitic oxide layer on the surface;
2. transferring the polycrystalline silicon slices with the parasitic oxide layers removed into a transparent quartz tank body filled with a mixed solution of deionized water and N-oleoyl poly-sodium amino acid to enable the liquid level to be over the silicon slices, and introducing ozone gas into the bottom of the tank body at the gas flow rate of 5sccm to enable a large amount of upward floating ozone bubbles to be generated in the solution, wherein the solution temperature is 25 ℃;
3. starting the tank body to perform ultrasonic vibration, wherein the ultrasonic power is 15W, so that the introduced ozone bubbles are decomposed into ultra-small bubbles, and then the ultra-small bubbles can uniformly roll upwards on the surface of the silicon wafer and keep the process for 1 min;
4. starting ultraviolet irradiation light with the light power of 100mW/cm2Irradiating the surface of the silicon wafer with the light for 5min, keeping the temperature of the solution at 35 ℃, and growing a pre-oxidation layer under the combined action of ozone, ultrasonic vibration and strong light irradiation;
5. the luminous power density is improved, and the luminous power is 1000mW/cm2The light continuously irradiates the silicon wafer for 5min, the temperature of the solution is kept at 55 ℃, and the oxidation strength and uniformity are enhanced by secondary strong light irradiation, so that a high-quality silicon oxide passivation layer is generated on the surface of the silicon wafer.
After the oxidation passivation treatment, the minority carrier lifetime of the polycrystalline silicon wafer with the initial minority carrier lifetime of 2 mus is improved to 18 mus, as shown in figure 2.
Example 2:
1. soaking the cleaned silicon wafer in HF with the concentration of 1% for 2min to remove a parasitic oxide layer on the surface;
2. transferring the polycrystalline silicon slices with the parasitic oxide layers removed into a transparent glass tank filled with a mixed solution of deionized water and alkyl naphthalene sulfonate to enable the liquid level to be over the silicon slices, and introducing ozone gas into the bottom of the tank at the gas flow rate of 50sccm to enable a large amount of upward floating ozone bubbles to be generated in the solution, wherein the solution temperature is 25 ℃;
3. starting the tank body to perform ultrasonic vibration, wherein the ultrasonic power is 30W, so that the introduced ozone bubbles are decomposed into ultra-small bubbles, the ultra-small bubbles can uniformly roll upwards on the surface of the silicon wafer, and the process is kept for 5 min;
4. starting ultraviolet irradiation light with the light power of 200mW/cm2Irradiating the surface of the silicon wafer for 15min, keeping the temperature of the solution at 40 ℃, and growing a pre-oxidation layer under the combined action of ozone, ultrasonic vibration and strong light irradiation;
5. the luminous power density is improved, and the luminous power is 1000mW/cm2The light continuously irradiates the silicon wafer for 15min, the temperature of the solution is kept at 90 ℃, and the oxidation strength and uniformity are enhanced by secondary strong light irradiation, so that a high-quality silicon oxide passivation layer is generated on the surface of the silicon wafer.
After the oxidation passivation treatment, the minority carrier lifetime of the polycrystalline silicon wafer with the initial minority carrier lifetime of 2 mus is improved to 25.77 mus, as shown in figure 3.
Example 3:
1. soaking the cleaned silicon wafer in HF with the concentration of 1% for 2min to remove a parasitic oxide layer on the surface;
2. transferring the monocrystalline silicon slice with the parasitic oxide layer removed into a transparent quartz tank filled with a mixed solution of deionized water and alkyl naphthalene sulfonate to ensure that the liquid level is over the silicon slice, and introducing ozone gas into the bottom of the tank at the gas flow rate of 100sccm to ensure that a large amount of upward floating ozone bubbles are generated in the solution, wherein the solution temperature is 25 ℃;
3. starting the tank body to perform ultrasonic vibration, wherein the ultrasonic power is 100W, so that the introduced ozone bubbles are decomposed into ultra-small bubbles, the ultra-small bubbles can uniformly roll upwards on the surface of the silicon wafer, and the process is kept for 5 min;
4. starting ultraviolet irradiation light with the light power of 200mW/cm2Irradiating the surface of the silicon wafer for 15min, keeping the temperature of the solution at 40 ℃, and growing a pre-oxidation layer under the combined action of ozone, ultrasonic vibration and strong light irradiation;
5. the luminous power density is improved, and the luminous power is 1000mW/cm2The light continuously irradiates the silicon wafer for 15min, the temperature of the solution is kept at 90 ℃, and the oxidation strength and uniformity are enhanced by secondary strong light irradiation, so that a high-quality silicon oxide passivation layer is generated on the surface of the silicon wafer.
After the oxidation passivation treatment, the minority carrier lifetime of the monocrystalline silicon wafer with the initial minority carrier lifetime of 50 μ s is improved to 950 μ s, as shown in FIG. 4.
Example 4:
1. soaking the cleaned silicon wafer in HF with the concentration of 1% for 2min to remove a parasitic oxide layer on the surface;
2. transferring the monocrystalline silicon piece with the parasitic oxide layer removed into a transparent quartz tank filled with a mixed solution of deionized water and lignosulfonate to ensure that the liquid level is over the silicon piece, and introducing ozone gas into the bottom of the tank at the gas flow rate of 70sccm to ensure that a large amount of upward floating ozone bubbles are generated in the solution, wherein the solution temperature is 25 ℃;
3. starting the tank body to perform ultrasonic vibration, wherein the ultrasonic power is 70W, so that the introduced ozone bubbles are decomposed into ultra-small bubbles, and then the ultra-small bubbles can uniformly roll upwards on the surface of the silicon wafer and keep the process for 5 min;
4. starting ultraviolet irradiation light with the light power of 500mW/cm2Irradiating the surface of the silicon wafer for 15min, keeping the temperature of the solution at 40 ℃, and growing a pre-oxidation layer under the combined action of ozone, ultrasonic vibration and strong light irradiation;
5. the luminous power density is improved, and the luminous power is 1000mW/cm2The light continuously irradiates the silicon wafer for 15min, the temperature of the solution is kept at 90 ℃, and the oxidation strength and uniformity are enhanced by secondary strong light irradiation, so that a high-quality silicon oxide passivation layer is generated on the surface of the silicon wafer.
After the oxidation passivation treatment, the minority carrier lifetime of the monocrystalline silicon wafer with the initial minority carrier lifetime of 50 mu s is prolonged to 730 mu s.
Example 5:
1. soaking the cleaned silicon wafer in HF with the concentration of 1% for 2min to remove a parasitic oxide layer on the surface;
2. transferring the monocrystalline silicon piece with the parasitic oxide layer removed into a transparent quartz tank filled with a mixed solution of deionized water and lignosulfonate to ensure that the liquid level is over the silicon piece, and introducing ozone gas into the bottom of the tank at the gas flow rate of 1sccm to ensure that a large amount of upward floating ozone bubbles are generated in the solution, wherein the solution temperature is 25 ℃;
3. starting the tank body to perform ultrasonic vibration, wherein the ultrasonic power is 50W, so that the introduced ozone bubbles are decomposed into ultra-small bubbles, and then the ultra-small bubbles can uniformly roll upwards on the surface of the silicon wafer and keep the process for 5 min;
4. starting ultraviolet irradiation light with the light power of 500mW/cm2Irradiating the surface of the silicon wafer for 15min, keeping the temperature of the solution at 30 ℃, and growing a pre-oxidation layer under the combined action of ozone, ultrasonic vibration and strong light irradiation; 5. the luminous power density is improved, and the luminous power is 2000mW/cm2The light continuously irradiates the silicon wafer for 10min, and the solution is kept
The temperature of the liquid is 70 ℃, and the oxidation strength and uniformity are enhanced by secondary strong light irradiation, so that a high-quality silicon oxide passivation layer is generated on the surface of the silicon wafer.
After the oxidation passivation treatment, the minority carrier lifetime of the monocrystalline silicon wafer with the initial minority carrier lifetime of 50 mu s is prolonged to 620 mu s.
Example 6:
1. soaking the cleaned silicon wafer in HF with the concentration of 1% for 2min to remove a parasitic oxide layer on the surface;
2. transferring the polycrystalline silicon slices with the parasitic oxide layers removed into a transparent quartz tank filled with a mixed solution of deionized water and alkyl naphthalene sulfonate to enable the liquid level to be over the silicon slices, and introducing ozone gas into the bottom of the tank at the gas flow rate of 50sccm to enable a large amount of upward floating ozone bubbles to be generated in the solution, wherein the solution temperature is 25 ℃;
3. starting the tank body to perform ultrasonic vibration, wherein the ultrasonic power is 10W, so that the introduced ozone bubbles are decomposed into ultra-small bubbles, the ultra-small bubbles can uniformly roll upwards on the surface of the silicon wafer, and the process is kept for 5 min;
4. starting ultraviolet irradiation light with the luminous power of 300mW/cm2Irradiating the surface of the silicon wafer with the light for 10min, keeping the temperature of the solution at 30 ℃, and growing a pre-oxidation layer under the combined action of ozone, ultrasonic vibration and strong light irradiation; 5. the optical power density is improved, and the optical power is 1500mW/cm2The light continuously irradiates the silicon wafer for 8min, and the solution is maintained at the moment
The temperature is 70 ℃, and the oxidation strength and uniformity are enhanced by secondary strong light irradiation, so that a high-quality silicon oxide passivation layer is generated on the surface of the silicon wafer.
After the oxidation passivation treatment, the minority carrier lifetime of the polycrystalline silicon wafer with the initial minority carrier lifetime of 2 mu s is prolonged to 35 mu s.
Example 7:
1. soaking the cleaned silicon wafer in HF with the concentration of 1% for 2min to remove a parasitic oxide layer on the surface;
2. transferring the monocrystalline silicon slice with the parasitic oxide layer removed into a transparent quartz tank filled with a mixed solution of deionized water and alkyl naphthalene sulfonate to ensure that the liquid level is over the silicon slice, and introducing ozone gas into the bottom of the tank at a gas flow rate of 50sccm to ensure that a large amount of upward floating ozone bubbles are generated in the solution, wherein the solution temperature is 25 ℃;
3. starting the tank body to perform ultrasonic vibration, wherein the ultrasonic power is 30W, so that the introduced ozone bubbles are decomposed into ultra-small bubbles, the ultra-small bubbles can uniformly roll upwards on the surface of the silicon wafer, and the process is kept for 3 min;
4. starting ultraviolet irradiation light with the light power of 200mW/cm2Irradiating the surface of the silicon wafer with the light for 10min, keeping the temperature of the solution at 30 ℃, and growing a pre-oxidation layer under the combined action of ozone, ultrasonic vibration and strong light irradiation;
5. the optical power density is improved, and the optical power is 1300mW/cm2The light continuously irradiates the silicon wafer for 8min, the temperature of the solution is kept at 70 ℃, and the oxidation strength and uniformity are enhanced by secondary strong light irradiation, so that a high-quality silicon oxide passivation layer is generated on the surface of the silicon wafer.
After the oxidation passivation treatment, the minority carrier lifetime of the monocrystalline silicon wafer with the initial minority carrier lifetime of 50 mu s is prolonged to 1020 mu s.
In conclusion, the invention provides a preparation method of a silicon oxide passivation layer, which avoids the processes of high vacuum and high energy consumption, is simple and easy to implement, can flexibly control the thickness of the passivation layer, and improves the passivation quality of the surface of a silicon wafer. It is to be understood that the invention is not limited to the specific embodiments, but rather, the invention is capable of other forms and modifications within the spirit and scope of the appended claims.
Claims (8)
1. A method for preparing a silicon oxide passivation layer, the method comprising:
(1) soaking the silicon wafer in a hydrofluoric acid solution, and cleaning the silicon wafer to remove the surface parasitic oxide layer;
(2) transferring the silicon wafer with the parasitic oxide layer removed into a transparent tank filled with a mixed solution of deionized water and a surfactant to ensure that the liquid level is over the silicon wafer, and introducing ozone gas with the concentration of 40ppm into the bottom of the tank to ensure that a large amount of bubbles floating upwards are generated in the solution;
(3) carrying out ultrasonic vibration treatment on the tank body to decompose the introduced ozone bubbles into ultra-small bubbles, so that the ultra-small bubbles can uniformly roll upwards on the surface of the silicon wafer, and keeping the process for 1-5 min;
(4) continuously keeping ultrasonic vibration, and simultaneously setting the optical power to be 100-500 mW/cm2Irradiating the surface of the silicon wafer with ultraviolet light for 5-15 min;
(5) the luminous power density is improved, and the luminous power is 1000-2000 mW/cm2Irradiating the silicon wafer for 5-15 min to produce a silicon oxide passivation layer on the surface of the silicon wafer;
wherein the surfactant is one of N-oleoyl polyamino acid sodium, alkyl naphthalene sulfonate, petroleum sulfonate and lignosulfonate; the concentration of the mixed solution was 5 wt%.
2. The method for preparing a silicon oxide passivation layer according to claim 1, wherein the concentration of the hydrofluoric acid solution in the step (1) is 1 wt%.
3. The method for preparing the silicon oxide passivation layer according to claim 1, wherein the transparent groove body in the step (2) is made of quartz, mica, glass or organic glass.
4. The method for preparing a silicon oxide passivation layer according to claim 1, wherein the temperature of the solution in the step (1), the step (2) and the step (3) is 0-40 ℃.
5. The method for preparing a passivation layer on silicon oxide according to claim 1, wherein the flow rate of ozone gas in step (2) is between 1-100 sccm.
6. The method for preparing the silicon oxide passivation layer according to claim 1, wherein the ultrasonic power in the step (3) is 10-100W.
7. The method for preparing a silicon oxide passivation layer according to claim 1, wherein the temperature of the solution in the steps (4) and (5) is 0-90 ℃.
8. The device for the preparation method of the silicon oxide passivation layer as claimed in claim 1, characterized in that the main body of the device is a transparent tank body, the bottom of the tank body is provided with a through hole for introducing ozone gas, and the through hole is connected with a gas flow control valve; the bottom of the tank body is arranged in the ultrasonic generator, and a silicon wafer mounting rack is arranged in the tank body and used for fixing a silicon wafer; ultraviolet light sources are arranged on two sides of the groove body and are opposite to two sides of the silicon wafer for irradiation.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000117208A (en) * | 1998-10-13 | 2000-04-25 | Kurita Water Ind Ltd | Electronic material washing method |
| JP2003101056A (en) * | 2001-09-20 | 2003-04-04 | Taku Material Kk | Method for manufacturing silicon substrate for solar cell |
| JP2012039016A (en) * | 2010-08-11 | 2012-02-23 | New Japan Radio Co Ltd | Manufacturing method of porous silicon optical element |
| CN103904155A (en) * | 2012-12-28 | 2014-07-02 | 理想能源设备(上海)有限公司 | Silicon substrate heterojunction solar cell vacuum treatment system and method for manufacturing cell |
| CN105118898A (en) * | 2015-09-23 | 2015-12-02 | 中利腾晖光伏科技有限公司 | Silicon chip surface passivation method and manufacturing method of N type double-face cell based thereon |
| CN105932097A (en) * | 2016-05-13 | 2016-09-07 | 浙江晶科能源有限公司 | Silicon chip oxidation method |
| US20160343568A1 (en) * | 2014-12-24 | 2016-11-24 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Method for forming surface oxide layer on amorphous silicon |
| CN110518075A (en) * | 2018-05-22 | 2019-11-29 | 中国科学院宁波材料技术与工程研究所 | A kind of black silicon passivating film, preparation method and application |
-
2021
- 2021-06-21 CN CN202110688134.7A patent/CN113410341A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000117208A (en) * | 1998-10-13 | 2000-04-25 | Kurita Water Ind Ltd | Electronic material washing method |
| JP2003101056A (en) * | 2001-09-20 | 2003-04-04 | Taku Material Kk | Method for manufacturing silicon substrate for solar cell |
| JP2012039016A (en) * | 2010-08-11 | 2012-02-23 | New Japan Radio Co Ltd | Manufacturing method of porous silicon optical element |
| CN103904155A (en) * | 2012-12-28 | 2014-07-02 | 理想能源设备(上海)有限公司 | Silicon substrate heterojunction solar cell vacuum treatment system and method for manufacturing cell |
| US20160343568A1 (en) * | 2014-12-24 | 2016-11-24 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Method for forming surface oxide layer on amorphous silicon |
| CN105118898A (en) * | 2015-09-23 | 2015-12-02 | 中利腾晖光伏科技有限公司 | Silicon chip surface passivation method and manufacturing method of N type double-face cell based thereon |
| CN105932097A (en) * | 2016-05-13 | 2016-09-07 | 浙江晶科能源有限公司 | Silicon chip oxidation method |
| CN110518075A (en) * | 2018-05-22 | 2019-11-29 | 中国科学院宁波材料技术与工程研究所 | A kind of black silicon passivating film, preparation method and application |
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