CN1134032A - Use of multiple anodes in magnetron for improving uniformity of its plasma - Google Patents

Abstract

In one group of embodiments, two or more small anodes are spaced apart from one another in a magnetron, with some aspect of their electrical power being individually controlled in a manner to control a density profile across a plasma. In another group of embodiments, the same effect is obtained by mechanically moving one or more small anodes or anode masks. When used in a magnetron having either a rotating cylindrical cathode or a stationary planar cathode and designed to sputter films of material onto a substrate, the uniformity of the rate of deposition across the substrate is improved. Also, adverse effects of sputtering dielectric materials are reduced.

Description

For improving the use of a plurality of anodes of plasma uniformity in the magnetron

Relate generally to magnetron of the present invention and plasma process, and relate more specifically to this process application in sputter material film on substrate.

Many technologies of existing different application occasion relate to the generation of plasma.An example is to be used to make the used dry etching process of semiconductor circuit and other places.Another example is the deposition film on substrate that also is used for semiconductor circuit making and other places.The important coating process of a kind of commercialization adopt a big magnetron with thin film deposition on the big substrate the vehicle glass that becomes to be deposited with the several layers material such as building, to limit some optical characteristics of this substrate.

In this and other magnetrons were used, people wished to keep the control of the ion distribution in the article on plasma body scope because no matter etching very much, and sputter still is the influence that other plasma process all are subjected to this distribution.Big substrate is being carried out in the thin film sputtering process, and the variation of the plasma density of covering target can cause the respective change to the deposition of materials rate of substrate.Because this class of great majority is used and is all required the film of institute's deposit that identical thickness is arranged on entire substrate, its tolerance is minimum, although people have taked the heteropical measure of some compensation plasma volume densitys, this class measure is always ineffective as people's expectation.In addition, during carrying out thin film deposition or other plasma auxiliary processes, the distribution kenel that covers the plasma density of target usually will change.

Therefore, specific purposes of the present invention provide the plasma that is used for being controlled to be the used magnetron of on the substrate deposition film technology with the deposited film that obtains to have uniform thickness.

Another object of the present invention provides during carrying out dielectric being splashed to the film-forming process of substrate, the technology of control plasma.

Of the present invention one more the purpose of broad sense provide all technology that are used to improve to the controlling level of various plasma process.

These and other purposes all realize by the present invention, and are brief and put it briefly, and settle one or more anodes and are provided with electric energy in the mode of the density distribution kenel (Profile) of the magnetron plasma of controlling topped at least one direction.Up to now, people more do not note the effect of anode of magnetron to its plasma distribution, especially the dielectric application facet of sputter during not to be noted when this process of enforcement the distribution of plasma change.For implementing the present invention, during plasma process, single anode is swashed the words surface move, or a plurality of primary anodes are fixed on spaced-apart locations and are connected to controllable electric power independently with respect to magnetron cathode work machinery.Under careless which kind of situation, all make minimumly on the direction that these anodes will be controlled along the plasma density distribution kenel at least, but they again must be enough greatly be competent to its with the processing of the magnitude of current.The present invention can be shaped and controlled the plasma density distribution kenel by this way, that is, allow in etching, adjusts during sputter or other process implementings of being finished by magnetron.When the deposit dielectric film, the ability of control distribution kenel is particularly favourable during a technical process, because when this technology is carried out, anode surface becomes the every other surface in magnetron cavity and is coated with this dielectric.

In a best applications occasion of the present invention, two or more this primary anodes are settled with respect to the negative electrode location, to provide a kind of as far as possible near the required plasma density distribution kenel of people.For each anode or anode group, the electric energy that is added to these anodes is control separately.A kind of form be control by each anode with the relative magnitude of current.Under another kind of form, two or more anodes are the sufficiently high speed of already known processes of average plasma density distribution kenel so that a substrate is allowed, and are connected to power supply one at a time one by one.These technology all allow to adjust the plasma distribution kenel in the mode that can change described distribution kenel during a technical process, in order that compensate the state variation that takes place during this technology.When the sputtered film dielectric material, these technology allow or provide using by the dysgenic compensation of the progressive coating anode surface of the dielectric substance of sputter.

The characteristic advantage of each side of the present invention and other purposes will from following to its most preferred embodiment of being done in conjunction with the accompanying drawings explanation and become apparent.

Fig. 1 schematically illustrates the thin film sputtering equipment and the technology of prior art;

Fig. 2 is the cross sectional view that sputtering equipment shown in Fig. 1 is got along its 2-2 line;

Fig. 3 is illustrated in the different distributions kenel of deposition rate in the deposit district of equipment shown in Figure 1 by several different curves;

Fig. 4 illustrates the situation of using single primary anode according to an aspect of the present invention;

Fig. 5 represents to use according to a further aspect in the invention two or more to have the primary anode of variable gas supply;

Fig. 6 represents to have the system of two or more primary anodes that its power supply of independently controlling is respectively arranged;

Fig. 7 is first embodiment to the control of Fig. 6 anode supply;

Fig. 8 is second embodiment to the control of Fig. 6 power supply;

Fig. 9 is depicted as the anode optimum pattern and the location of either side of the present invention shown in enforcement Fig. 3-8;

Figure 10 schematic representation moves the mechanical technique of single primary anode during depositing technics;

Figure 11 represents the alternative a kind of technology to the mask enterprising line scanning of elongated anode during deposition process that has the small-bore;

Figure 12 is illustrated in the mechanical optical gate that uses electric control on two or more primary anodes surface;

Figure 13 A is the top view that adopts by the planar magnetron of a plurality of primary anodes of the present invention; With

Figure 13 B is the end view of the planar magnetron of Figure 13 A.

Can be applicable to magnetron and plasma process though different aspect of the present invention is put it briefly, the enforcement of different aspect of the present invention is described the accompanying drawing of thin film deposition on big substrate by sputtering technology being used for.Referring to Fig. 1, describe a example earlier,, and carry out this technology device therefor as starting point as this sputtering technology of current practicality.Magnetron shown in Fig. 1 is that the negative electrode 11 that a kind of utilization is elongated cylindrical is done at the uniform velocity rotation by motor driven source 13 around axle 15.Have one deck target material 17 that one deck is sputtered on the cylindrical outer surface of negative electrode 11 during depositing technics.Move perpendicular to a paths of the rotating shaft 15 of negative electrode 11 on substrate 19 edges.Substrate moves by the direction of some traditional mechanical such as the sputter roller 21 that is driven by electric drive motor 23 along described path.An elongated permanent magnet structure spare 25 is placed in the negative electrode 11 and towards coated substrate 19.Magnet member 25 is not with target 11 rotations, but its resting position often can obtain rotatably adjusting slightly.Magnet member 25 comprises the continuous some magnet along its length.This length has been determined the width in deposit district.The Breadth Maximum of substrate 19 is slightly smaller than the length of magnet member 25.

This depositing technics usually occurs in the vacuum chamber scope that is made of the metallic walls that is schematically illustrated as Fig. 1 chain-dotted line 27.Vacuum pump 29 maintains this room pressure will finish low-level following that this technology conforms to.Through managing 31, or other forms of conduit is transferred near the target surface 17 from the process gas in source 33.A kind of pipe 31 of form have near the target 17 along the several holes on its length, gas is directly delivered to the deposit district 35 (Fig. 2) between target surface 17 and the substrate 19.Second similar gas delivery tube can be arranged on the opposite side of negative electrode 11.Also can select other gas transmission technologys for use.

The sort of magnetron shown in Fig. 1 and 2 is by 37 power supplies of direct current (D.C) power supply.Another kind of magnetron adopts other forms such as interchange or pulse current.Of the present invention kind of specific character also has the applicability to that class magnetron.But at magnetron shown in Fig. 1 and 2, its negative electrode 11 is linked with respect to maintaining earthy locular wall 27 usually on the negative voltage.Also making the material as target 17 is that the consequently outer surface of this target that so conducts electricity also keeps negative voltage.

Often the inner surface of metal vacuum locular wall 27 is used as the anode of sputtering equipment.In the case, vacuum-chamber wall is still remained on earthing potential.Another alternative way is to utilize the opposite side that is positioned at negative electrode 11, with the anode 39 of deposit district 35 isolation.Remain on positive potential by being connected to power supply 37 with anode 39 this moment.

For can form the deposition film of uniform thickness on the width of substrate 19, the deposition of materials rate on this substrate must be uniform.This uniformity is illustrated by the solid line 41 of Fig. 3.(by) depositing technics itself can not get this straight line, and what obtain is more to resemble the deposition rate distribution kenel shown in the dotted line 43.General way is to adjust screen 45 and 47 by using in 35 both sides, deposit district, distributes to change along the deposit district of negative electrode 11 length.In fact, this adjustment screen has defined deposit district 35.This adjustment screen protection is held with the electric insulation of this system and for have a narrower opening at the middle part of negative electrode 11 length, with the deposition rate of restriction to substrate 19, is shaped for having the broad opening at arbitrary end simultaneously.Use to adjust to shield and the deposition rate distribution kenel of curve 43 (Fig. 3) can be improved a bit near the ideal line that becomes with curve 41.Yet its shortcoming is: the material that can be deposited on the substrate 19 is replaced to be deposited on the screen 45 and 47, is to admit material requested layer thickness substrate 19 can move past the potential speed of vacuum chamber thereby reduced.

In the operation, the gas by managing the 31 suitable pressure of introducing and negative and positive voltage is added to target 17 respectively and anode 39 produces plasma in the deposit districts 35 that defined in target 11 scopes by magnetic member 25 mostly.Form another plasma near anode 39, these two plasmas are linked by another ion plasma therebetween again.Free electron and ionic bombardment surface 17 in the plasma in the deposit district 35 are with from this surface knock-on atom.As a kind of replacements of use adjusting screen 45 and 47 or replenish, its ground method has been controlled along the relative quantity of the reacting gas of target 17 length importing, for example at the both ends of target 17 rather than bigger flow is provided in the middle.This control that reacting gas on the target is distributed also is used in the deposit distribution kenel on the adjusted substrate to a certain degree.

If the process gas that imports the deposit district by pipe 31 is a kind of inert gas, the material that then is deposited on the substrate 19 promptly is the material of target 17.Usually remove the depositing metal thin layer with this technology, aluminium for example, zinc, titanium and many other metals, or independent or synthetic thin layer.Target 17 is to be added to giving target 17 required mechanical properties desired other materials on a small quantity by the material of wanting deposit.

On substrate 19, want the deposit dielectric film, such as silicon dioxide, silicon nitride, silicon oxynitride, aluminium oxide, titanium dioxide, and so on film adopt this same common processes.Under this class situation, target 17 is made of the metal component of thin dielectric film and the process gas supplied with by pipe 31 provides other components.In this class technical process, when deposition oxidation film, process gas is generally pure oxygen, and when the deposit nitride film, process gas is a purity nitrogen, and when deposit oxynitrides film, process gas is oxygen and nitrogen, and the rest may be inferred.Gas atom combines dielectric film with the metallic atom that sputters out from target 17 through reaction.A kind of rare gas, or the combination of several rare gas can mix mutually with this reacting gas.

In this technical process, what cause greatest difficulty promptly is to dielectric deposit.This is because dielectric substance not only is deposited on the substrate, but also is deposited on each other surface in the vacuum chamber scope.This influences the operation that DC magnetron in period takes place in deposit widely.It should be noted that most deposit dielectric material on powered surfaces.But, 17 deposit dielectric materials generally are not problems on the target surface, because its rotation by deposit district 35 makes any this class dielectric can spatter from this surface.The rotational circle tubular negative electrode of a Here it is magnetron is a reason that is suitable for this class technology most.The dielectric substance that is deposited on its planar cathode/target surface is also arranged the planar shaped magnetron but it only sputters out in " runway " (race track) district of target.Other districts of target become and scribble this dielectric, finally cause to interrupt the electric arc that this technology continues.

Though people overcome deposited for dielectric to have annotated great concern to the influence on negative electrode/target surface is paid, lessly notice this deposit antianode surface, the influence of the secondary charges element of this system.The function of anode is being collected electronics.In the D.C. system, anode has applied dielectric substance can make very difficulty of this function.As part of the present invention, have now found that: this coating of antianode also influences the deposition rate distribution kenel on the substrate width.If the whole inside (under the situation of the isolation anode 37 that does not have Fig. 1) of vacuum metal wall 27 is anodes of system, then this influence is the most sure.During this deposition process, that large-area surface is applied unevenly with this dielectric, and this obviously causes effective anode surface around interior the moving of vacuum chamber.Electronics will attracted to one or more districts on this distributed anode surface of thin-medium, and when this technology continues, the position changeable in described district.

Have now found that thus and cause: anode plasma is around this density distribution kenel that can influence on the deposit district 35 inner cathode plasmas of reorientating of internal vacuum chamber.A kind of extreme influence to this distribution kenel is illustrated by Fig. 3 dotted line 49.It is invalid transforming the shape of adjusting screen 45 and 47 for acquisition curve 41 this even distribution kenels, because during this technology, the distribution of curve 49 changes all the time.This is moved and causes around the vacuum chamber inwall by effective anode surface.Use separation anode 39 shown in Figure 1, because effectively the area that moves of anode is much littler, so how much reduced this variation, if but when requiring thickness on the substrate to want even, the distribution kenel variation that then causes thus in sputter procedure is still and does not meet the requirements.More worsened this effect often when a 2 meters wide or wideer big substrate running into building or vehicle glass.Therefore, the width in deposit district 35 must be at least will so big width.

According to an aspect of the present invention, during the thin dielectric film deposit, this DYNAMIC DISTRIBUTION kenel displacement is to be eliminated by the size that reduces effective annode area.Referring to Fig. 4, a minimum anode 51 has substituted the big anode 39 in Fig. 1 system.So free electron can be sought minimum dielectric film thickness on an area that has reduced significantly.Anode 51 is most important along the size " D " that is parallel to the extension of negative electrode rotating shaft 15 directions.Because it is along the deposition rate distribution kenel direction that need be controlled, so the most important thing is to remain minimum along the size of that direction anode 51.Make anode plasma along mobile the suffering restraints on that direction like this, thereby eliminated by influence shown in Fig. 3 curve 49.If when being used for Fig. 1 system, anode 51 is not along so important perpendicular to the size on axle 15 directions, but when needing to control plasma density on this orthogonal direction, then may be of equal importance yet.

Yet for handling the electric current that what is called will be carried, the size of anode 51 is inevitable enough big.If do too for a short time so that can not bear this current level the time, then anode 51 will damage owing to overheated.Regardless of the length of negative electrode 11, desirable full-size " D " is eight centimetres, preferably less than three centimetres.

Though single primary anode 51 has solved the problem that deposit distribution kenel changes during the deposit dielectric really, it roughly must be positioned the middle part of negative electrode 11 length in order not produce deposit distribution kenel 43 (Fig. 3), to obtain to a certain degree asymmetric.This itself causes again along the deposition rate of the metal of negative electrode 11 length part with respect to the further increase towards the deposition rate at two ends.Although can appearance is so that substrate 19 is received in the even deposition rate on its width again with adjusting plate 45 and 47, this further reduces the even throughput of system.

So, according to a further aspect in the invention, as shown in Figure 5, two little anodes 53 and 55 like this are arranged on the position of adjoining negative electrode 11 opposite ends.Power supply 57 is connected to each anode with identical constant voltage level.So the effect of location is to have promoted negative electrode 11 ends and the deposition rate distribution kenel that reduced its middle part, deposition rate is more evenly distributed and has therefore reduced the effect of essential use adjustment screen 45 and 47.Even when depositing metal, all may there be the situation of wishing to change deposition rate distribution kenel.This profile may because the distribution of vacuum chamber shape and element thereof but twisted, this causes and need once adjust.This profile also may change and change period at whole lasting depositing technics owing to some parameter.When deposit dielectric, use two anode surfaces separated by a distance can cause that deposition rate distribution kenel changed along showing of negative electrode 11 length directions.At first being one of two anodes 53 and 55, is that another becomes effective anode then.

So, but system shown in Figure 5 is to be provided with for the level of controlling anode 53 and 55 each received current individually.Deposit district 35 realizes shown in process gas rather than introducing Fig. 1 and 2 by introducing at these anode surfaces for this. Ceramic nozzle 59 and 61 is placed in the neighbouring surface of anode 53 and 55 respectively.Gas from source 33 passes through the flow regulator 63 of electric control separately and each of 65 these nozzles of supply.Thereby these valves controls of electronic system 67 operation are added to each gas relative quantity of two anodes.This tittle can be set by an interface circuit 69 by the user, to decide electric current by each anode 53 and 57 when keeping giving when power supply 57 feeds back by control circuit 71.For example, if keep each of two anode currents identical always and constant and keep this gas flow, then the unevenness that forms on two anode surfaces will can not cause that deposition rate distribution kenel changes.Along with the imbalance that detects electric current, power supply 57 will be regulated gas flow for the balance of restoring current in a close-loop feedback control system.This has been avoided deposition rate distribution kenel that undesirable variation takes place in time.In addition, operate in for making adjustment to running through the deposition rate distribution kenel that a long-time depositing technics keeps, control circuit 67 can being set at deliberately with unsmooth but fixing electric current and flow through under each the mode of two anodes 53 and 55.

As everyone knows, the magnetic field relevant with magnetron causes that electronics moves around negative electrode 11 to give constant current ejector half formula.The system of Fig. 5 gas nozzle 59 and 61 is arranged on the electron stream relative direction on it plays the best use of under situation near primary anode 53 and 55 the edge separately.

It is believed that the importing of this process gas because gas stream produces near the partial high pressure district of anode and the may command anode current.Because anode does not have to be provided with magnet in its vicinity, believes that generation can promote better anode plasma than the ambient pressure elevated pressures in the vacuum chamber.

With reference to figure 6, this Figure illustrates the adjustable gas system that does not require Fig. 5 embodiment, be used to realize the power technology of same effect.In Fig. 6 embodiment, process gas is imported into vacuum chamber with any common mode shown in Fig. 1 and 2.Now same primary anode 53 and 55 is connected to different power supply 73, this power supply 73 is under user's setup parameter influence of supplying with by circuit 77, by control system 75 controls.Two different embodiment of power supply 73 are shown in Fig. 7 and 8.At first respectively electric current is supplied with anode 53 and 55 from the power supply 79 and 81 of independent control with reference to 7, one analogue systems of figure.Another independent current source 83 links to each other with negative electrode 11.Each is a benchmark with a common node 85 for these power supplys, and node 85 is connected to the earth potential of vacuum-chamber wall by resistance 87.

In an instantiation, be adjustable by control assembly 75 by the constant amplitude that utilizes the electric current that independent constant-current source wherein supplied with by each power supply as each power supply 79 and 81 to the required control of deposit distribution kenel.So this makes current amplitude to be set for obtain required deposition rate profile step response during this technical process, and even can be during this technical process by regulating power supply 79 with 81 relative current amplitude and change.The use of constant-current source has been guaranteed and should the distribution kenel can not changed during the deposit dielectric material, because any uneven deposit on anode itself is compensated automatically by this constant current performance.

Referring to Fig. 8, this illustrates the operation that is different from power supply 73 (Fig. 6).In the present embodiment, power is synchronously connected (" opening ") by alternately to each primary anode 53 and 55 and is disconnected (" pass ").This power supply is changed between two anodes effectively.The advantage of doing like this is: in office one is instantaneous, only has an anode surface to be connected to power supply therefore a service area of waiting to gather free electron is only arranged.So this system has the advantage of Fig. 4 list anode system operating aspect during with dielectric substance with regard to this system's deposit.But owing to used two such anodes, so present embodiment also has the other advantage that can control deposition rate distribution kenel.

Again referring to Fig. 8, the repetition of two anode supplies " is opened " and " pass " cycle is controlled in some way.Anode 55 has " opening " time 91 during anode 53 has " pass " time 93.Otherwise in following one-period, anode 53 is connected to power supply elapsed-time standards 95 be converted into time 97 of " pass " at anode 55 during.Attention: each anode transferred to two cycles during " opening " overlapping sub-fraction.That is to say, be maintained that when an anode is transformed into another anode, two anodes are all linked power supply for guaranteeing anode plasma.The cycle of a conversion operations process is τ.Make overlapping time less than 1/100 of τ.Be about 100 microseconds typical overlapping time.

The deposition rate distribution kenel that people will recognize type shown in Figure 3 when an anode is energized and another anode be diverse when being energized.So several circulations appear in this conversion at least when taking place to such an extent that enough consequently any a part of substrate is in the deposit district scope soon.Referring to Fig. 2, note: cross over the single line of substrate width, when it moves past negative electrode 11, will in deposit district 35, stay for some time.Preferably that line of substrate 19 passes interior appearance of that time 5 or more a plurality of period tau of expense that deposit district 35 changes.That root line stands a mean value of the fluctuation deposition rate distribution kenel of many circulations at that time, with this line through deposit district during deposition rate distribution kenel coming to the same thing when keeping constant.In fact, the frequency of conversion cycle is elected as and 8-10 period tau or more occur when arbitrary part substrate is in the deposit district.

This sequential of anode has solved the intrinsic problem of deposit dielectric material aspect.This technology also makes the sort of profile step response shown in Figure 3 to be linked relative " opening " time of power supply 73 and permanently changed by adjusting each anode.That is to say, be to compensate some intrinsic inhomogeneities of the deposition rate distribution kenel in the district of contiguous two anodes, can one be shorter than another rather than resemble (Fig. 8) that " to open " time 91 and 95 be identical the time of " opening " as shown in the figure.Equally, during depositing technics, can adjust these corresponding " opening " time, to compensate the variation that in that technical process, takes place.

Though now two anodes are used the basis that explains the different aspect of the present invention with regard to Fig. 5-8, also can use supplementary anode.Under the situation of the constant current control power supply of Fig. 7, each supplementary anode is added an additional constant-current source.Under the sequential embodiment of Fig. 8 situation, each anode is converted to " opening " successively, simultaneously every other anode all is in " pass " state, next anode that just converts " opening " successively to just to be in anode be converted to have before " pass " a bit of overlapping.

In addition, anode must not be tabular and have the surface of horizontal alignment.Fig. 9 represents to have used 4 anodes 101,103,105 and 107 that extend along negative electrode 11 length directions.These anodes each by constituting from the outwardly directed a large amount of conducting line segments of an elongated core, conducting line segment is linked core body, these core bodys are elongated on the direction perpendicular to the rotating shaft 15 of negative electrode 11.The end of these leads forms cylindric its core body that makes along this cylinder axis location.The structure of this line brush anode (wirebrush anodes) and operate in the people's such as Sieck that submitted on July 1st, 1993 the common pending trial U.S. Patent application 08/086,136 more fully explanation is arranged, it is for reference to fit into this paper in this application.

Owing to be for general sputter applications, above-mentioned explanation is supposed: keep a kind of uniform deposition rate.At that time, material is deposited on the smooth substrate surface with one deck form of a topped uniform thickness.Yet, also have some application scenarios to need illuvium thickness to have some inhomogeneous.Anodic control technology of the present invention makes it be easy to be deposited with each layer that some gives the thickness gradient of determining earlier on the substrate width.This deposition rate distribution kenel is to make it have a kind of heterogeneous but controlled deposition rate distribution kenel by what regulate that independent anode characteristic controlled.Also having some substrates is not smooth application scenario, and windshield is an example.Be bent upwards and even can upwardly extending always basically this windscreen surface part coated towards negative electrode.In the case, be deliberately to make deposit distribution kenel inhomogeneous, to obtain the uniform coating of thickness on the entire substrate.

In the various embodiments described above, all anodes are positioned coated substrate top.Be prevented from it at knocking-on any particle is provided with under owing to each anode from anode during the depositing technics fence or other baffle plates and arrive substrate.This is so that a kind of technology of generally using is all not shown in the accompanying drawings this fence.On the other hand, each assembly of magnetron can be squeezed, and that is to say, substrate can place negative electrode/target top, and anode places the substrate below.Fall from the knocking-on particle away from substrate of anode at that time.

Though aforesaid is not that best still same favourable outcome can be obtained by one of some mechanical systems.With reference to Figure 10, primary anode 109 under the control of suitable electronic circuit 113 by a motor source 111 along target 17 ' length move forward and backward.Use single primary anode to have the top various advantages of having described according to the relevant dielectric substance deposit of Fig. 4 embodiment aspect.The deposition rate distribution kenel of the sort of type shown in Figure 3 is to adjust along the VELOCITY DISTRIBUTION kenel of this path movement by changing anode 109.For example, anode 109 can target 17 ' two ends rather than in ask and stop one suitably long period.Can make anode move past the middle part of its stroke than in its end fasterly.During crossing over any line that time of substrate width by deposit expense that the district changes, occur five or more circulations at least, be preferably 8-10 or more.

Figure 11 illustrates a similar system, and what just replacement moved forward and backward primary anode is that an elongated anode 115 of settling along target 17 and mask 117 length that aperture 119 is arranged moves forward and backward along its length direction.Make the size in the aperture 119 on anode 115 length directions identical with single anode 51 described small sizes " D " among Fig. 4 embodiment.

In Figure 12, two primary anodes 119 and 121 with regard to target 17 ' length be held fixing.Yet each disposes one and is positioned at anode and target surface 17 ' exercisable baffle plate, and baffle plate 123 and 125 are shown respectively among the figure.Motor source 127 separately and 129 moving stop 123 and 125 respectively under the control of electronic circuit 131.Baffle plate 123 and 125 can be located in fully topped its anode 119 and 121 separately, can be moved out of that section stroke fully, maybe can be maintained at a certain position that it is asked.If baffle plate 123 and 125 each expose a part its anode is so that the electric current of two anodes is kept constantly separately, then Figure 12 system promptly becomes with regard to Fig. 6 and 7 and a kind of mechanical analogue of the system described.On the other hand, if baffle plate 123 and 125 is operated successively a certain moment only one of anode be exposed (another open after the little exclude overlap of a shutoff) momently, this result is exactly a kind of mechanical analogue to Fig. 6 and 8 described systems.

Although implemented in the above system that different embodiment is described as be at independent rotational circle tubular negative electrode and target assembly, the present invention can be applicable to other all configurations.For example, some sputtering system is used two or more cylindrical targets, their rotation orientation parallel to each other in a vacuum chamber.In this case, the configurable double of each cylindrical shape negative electrode has been stated the anode construction of one of embodiment, usually power supply and the control system shared to two cylinder targets.In other words, two or more rotational circle tubular negative electrodes can be shared single anode system.

In addition, the present invention is not limited to cylindrical magnetron.But can be applicable to plane magnetron equally, an one example is shown among Figure 13 A and the 13B briefly.A substrate 133 to be applied is moved past the negative electrode 135 on the flat target surface 137 that is parallel to substrate 133 surfaces.Target 137 be centered around extend on substrate 133 width the axle 136 and the symmetry.Independent primary anode 139,141,143 and 145 is set near each corner of negative electrode 135.These anodes can be according to any is operated with regard to the described embodiment of Fig. 5-8.Another possibility be only with two be arranged on negative electrode 135 along the anode on cornerwise relative two corner location.

Though now just most preferred embodiment of the present invention is described its each side, people will understand the qualified right that obtains the general protection of appended claims of the present invention.

Claims (10)

1. in a vacuum chamber (27) scope, be used for material film is splashed to the equipment on the mobile substrate (19) that is just passing through, comprise along its path:

Cylindrical target surface (17), this target surface can rotate around one length-wise axis (15), axis (15) is orientated by described substrate path for horizontal expansion, described target surface comprises its interior magnet (25) towards described path, and remain under the negative voltage, thereby be defined in target and along the deposit district (35) between the substrate path that cylindrical target length is extended and

Comprise contiguous target surface and be connected at least one anode (51 of positive voltage from power supply (37); 53,55; 109; 115; 119; 121) device is used to be adjusted in the described deposit district deposition rate distribution kenel (41) to the described material of substrate deposit.

2. equipment as claimed in claim 1 is characterized in that: described deposition rate distribution kenel adjusting device comprises the device (111,113) that is used for physically moving at least one anode (109) on described target length surface azimuth axis (15) direction.

3. equipment as claimed in claim 1 is characterized in that: described deposition rate distribution kenel adjusting device is included as covers described at least one anode (115; 120,121) at least one baffle plate of settling (119; 123,125) and responsive control signal be used to adjust the device (111,113 of the amount that described anode covered by described baffle plate; 127,129).

4. equipment as claimed in claim 1 is characterized in that: described deposition rate distribution kenel adjusting device comprises two or more separation anodes (53,55; 120,121), these anodes keep being separated by on described target length surface azimuth axis (15) direction.

5. equipment as claimed in claim 4, it is characterized in that: described deposition rate distribution kenel adjusting device comprises responsive control signal in addition, be used for physically covering chronologically two or more separation anodes (120,121) each so that in fact only expose if having time the device (127,129) of an anode.

6. equipment as claimed in claim 4 is characterized in that: described deposition rate distribution kenel adjusting device comprises the device (73) that connects in described anode (53,55) and the described power supply in addition, is used for controlling independently the power that is added to each anode.

7. equipment as claimed in claim 4 is characterized in that: described deposition rate distribution kenel adjusting device comprises the device (73 that is used for independently adjusting by the electric current of each described two or more anode (53,55) in addition; 59; 61; 123,125).

8. equipment as claimed in claim 7 is characterized in that: described apparatus for adjusting power supply comprises the device (59,61) that process gas is imported the surface of contiguous described two or more anode of vacuum chamber (53,55), is used to adjust the gas relative quantity that is sent to each anode.

9. one kind is splashed to method on the substrate (19) from a target that is connected to negative voltage source (73) and is positioned at the vacuum chamber (27) that imports a kind of gas with thin dielectric film, wherein form along the substrate of a direction and with and a described direction orthogonal direction (15) pass relatively moving between the target of described substrate, said method comprising the steps of:

With regard to diverse location along the target of described orthogonal direction (15), settle at least two at a distance of the anode of being separated by (53,55) of certain distance and

Each of described at least two anodes is independently controlled the electrical power of positive voltage (73), thus on the control substrate with the rate distribution kenel (41) of the sputtered film of described orthogonal direction.

10. according to the method for claim 9, it is characterized in that: described power controlled step comprise one at a time excitation (Fig. 8) described at least two anodes successively each to each is so encouraged at least five times each of described at least two anodes of speed alternately excitation to be enough to make described anode substrate (11) one given positions carry out the district (35) of thin film deposition on substrate by one when.

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