CN113394081A - Photoresist removing method - Google Patents
Photoresist removing method Download PDFInfo
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- CN113394081A CN113394081A CN202110600536.7A CN202110600536A CN113394081A CN 113394081 A CN113394081 A CN 113394081A CN 202110600536 A CN202110600536 A CN 202110600536A CN 113394081 A CN113394081 A CN 113394081A
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- Prior art keywords
- light resistance
- seconds
- cleaning
- photoresist
- design process
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 42
- 229920002120 photoresistant polymer Polymers 0.000 title claims description 28
- 238000004140 cleaning Methods 0.000 claims abstract description 28
- 238000012938 design process Methods 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 10
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 18
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 18
- 238000005406 washing Methods 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 9
- 239000002184 metal Substances 0.000 abstract description 9
- 239000002344 surface layer Substances 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 238000005457 optimization Methods 0.000 abstract description 3
- 239000002253 acid Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0331—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers for lift-off processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a method for removing a light resistance, which comprises the following steps: forming a light resistance according to a design process, and etching the light resistance; cleaning and removing the light resistance for a preset time by using a weak alkaline cleaning solution; and executing subsequent design process steps. The invention adopts the alkalescent cleaning solution to effectively clean and remove the DUO (and other light resistors) and the hard shell on the surface layer thereof, and simultaneously can effectively reduce the loss of the metal layer compared with the prior art which adopts an acid cleaning solution such as DHF, thereby being more beneficial to the optimization and the promotion of the process yield.
Description
Technical Field
The invention relates to the field of integrated circuits, in particular to a photoresist removing method.
Background
With the continuous reduction of the device size, the thickness of the gate dielectric is continuously reduced, and the leakage current of the gate is increased, and the leakage current generated by using the SiO2 as the gate dielectric is unacceptable due to the tunneling effect of electrons under 5 nm. The high-k dielectric is adopted to replace SiO2, so that the equivalent silicon dioxide insulation thickness can be effectively reduced, and the physical thickness of the gate dielectric can be larger, thereby blocking the gate leakage at the source. At present, two processes, namely a Gate-first process and a Gate-last process, can be adopted in a 32nm node to obtain a High-dielectric constant Metal Gate (HKMG) structure. In a 28nm HK Gate-last process, namely a Replacement Metal Gate (RMG) process, a High-K material does not need to undergo a High-temperature process, and the drift of a threshold voltage Vt can be effectively reduced, so that the reliability of a device is improved, but the RMG process needs more process steps, and more challenges are brought to manufacturing.
In the HKMG semiconductor manufacturing process, the DUO (and other photoresists) forms a hard shell on the surface layer after etching, which makes it difficult to completely remove the DUO (and other photoresists) in the subsequent cleaning process by using a simple solvent.
Therefore, a new photoresist cleaning scheme is needed, which not only can effectively remove the crust on the surface layer of the DUO, but also can effectively reduce the loss of the metal layer compared with DHF, thereby being more beneficial to the optimization and the promotion of the process yield.
Disclosure of Invention
In this summary, a series of simplified form concepts are introduced that are simplifications of the prior art in this field, which will be described in further detail in the detailed description. This summary of the invention is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
The invention aims to provide a photoresist removing method which can effectively remove the crust on the surface layer of DUO and can effectively reduce the loss of a metal layer compared with DHF.
In order to solve the above technical problems, the photoresist removing method provided by the present invention comprises the following steps:
s1, forming a light resistance according to the design process, and etching the light resistance;
s2, washing and removing the light resistance in a preset time by using a weak alkaline cleaning solution;
and S3, executing the subsequent design process steps.
Optionally, the method for removing the photoresist is further improved, and the weak alkaline cleaning solution is ammonia water.
Optionally, the photoresist removing method is further improved, and when the step S2 is performed, the ammonia water concentration is 10% to 20%.
Among them, the ammonia water concentration is preferably 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19% or 20%.
Optionally, the photoresist stripping method is further modified, and the cleaning time is in the range of 30 seconds to 60 seconds when step S2 is performed.
Among them, the washing time is preferably 30 seconds, 35 seconds, 40 seconds, 45 seconds, 50 seconds, 55 seconds, or 60 seconds.
Optionally, the photoresist removing method is further improved, and when the step S2 is implemented, the concentrated flow of ammonia water is 1000ml/min-2000 ml/min;
wherein the ammonia water concentration flow rate is preferably 1000ml/min, 1100ml/min, 1200ml/min, 1300ml/min, 1400ml/min, 1500ml/min, 1600ml/min, 1700ml/min, 1800ml/min, 1900ml/min or 2000 ml/min.
Optionally, the photoresist stripping method is further modified, and the cleaning temperature is in a range of 40 to 70 degrees celsius when step S2 is performed.
Wherein, the cleaning temperature is preferably 40 ℃, 45 ℃, 50 ℃, 55 ℃, 60 ℃, 65 ℃ or 70 ℃.
Optionally, the photoresist stripping process is further improved, which can be used for photoresist cleaning for 32nm, 28nm, 22nm, 20nm and less than 16nm processes.
Alternatively, the photoresist removing method is further improved, which can be used for the photoresist cleaning removal of a logic device or a memory device.
DUO (and other photoresists) forms a hard crust on the skin after etching, and the crust can be removed by performing a pre-treatment with DHF in the prior art. In the process development, if the TaN thickness is reduced, the NMOS region will have a buffer metal dam, as shown in fig. 1-4. To reduce the DHF flow time, the metal dam can be reduced, but buffer DUO residual occurs.
In order to reduce the loss of the metal layer in the DUO (and other photoresistors) removing process, the invention adopts the alkalescent cleaning solution, such as ammonia water, so that the DUO (and other photoresistors) and the hard shell on the surface layer thereof can be effectively cleaned and removed, and simultaneously, compared with the prior art which adopts an acid cleaning solution, such as DHF, the loss of the metal layer can be effectively reduced, thereby being more beneficial to the optimization and the promotion of the process yield.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention, are incorporated in and constitute a part of this specification. The drawings are not necessarily to scale, however, and may not be intended to accurately reflect the precise structural or performance characteristics of any given embodiment, and should not be construed as limiting or restricting the scope of values or properties encompassed by exemplary embodiments in accordance with the invention. The invention will be described in further detail with reference to the following detailed description and accompanying drawings:
FIG. 1 is a prior art DUO layer removal diagram one.
FIG. 2 is a prior art DUO layer removal diagram two.
FIG. 3 is a prior art DUO layer removal diagram three.
Figure 4 is a prior art DUO layer removal diagram four.
FIG. 5 is a schematic flow diagram of the present invention.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and technical effects of the present invention will be fully apparent to those skilled in the art from the disclosure in the specification. The invention is capable of other embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the general spirit of the invention. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict. The following exemplary embodiments of the present invention may be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. It is to be understood that these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the technical solutions of these exemplary embodiments to those skilled in the art.
A first embodiment;
as shown in fig. 5, the method for removing photoresist provided by the present invention comprises the following steps:
s1, forming a light resistance according to the design process, and etching the light resistance;
s2, washing and removing the light resistance in a preset time by using a weak alkaline cleaning solution;
and S3, executing the subsequent design process steps.
A second embodiment;
the photoresist removing method provided by the invention comprises the following steps:
s1, forming a light resistance according to the design process, and etching the light resistance;
s2, ammonia water with the concentration of 10% -20% is used for cleaning and removing the light resistance in a preset time;
and S3, executing the subsequent design process steps.
Among them, the ammonia water concentration is preferably 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19% or 20%.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the invention. As used herein, the singular is intended to include the plural unless the context clearly dictates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
A third embodiment;
the photoresist removing method provided by the invention comprises the following steps:
s1, forming a light resistance according to the design process, and etching the light resistance;
s2, ammonia water with the concentration of 10% -20% is used for cleaning and removing the light resistance for 30-60 seconds;
and S3, executing the subsequent design process steps.
Wherein, the concentration of the ammonia water is preferably 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19% or 20%; the washing time is preferably 30 seconds, 35 seconds, 40 seconds, 45 seconds, 50 seconds, 55 seconds, or 60 seconds.
A fourth embodiment;
the photoresist removing method provided by the invention comprises the following steps:
s1, forming a light resistance according to the design process, and etching the light resistance;
s2, ammonia water with the flow rate of 1000ml/min-2000ml/min and the concentration of 10% -20% is used for cleaning and removing the light resistance for 30 seconds-60 seconds;
and S3, executing the subsequent design process steps.
Wherein, the concentration of the ammonia water is preferably 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19% or 20%; the washing time is preferably 30 seconds, 35 seconds, 40 seconds, 45 seconds, 50 seconds, 55 seconds, or 60 seconds; the ammonia water concentration flow rate is preferably 1000ml/min, 1100ml/min, 1200ml/min, 1300ml/min, 1400ml/min, 1500ml/min, 1600ml/min, 1700ml/min, 1800ml/min, 1900ml/min or 2000 ml/min.
A fifth embodiment;
the photoresist removing method provided by the invention comprises the following steps:
s1, forming a light resistance according to the design process, and etching the light resistance;
s2, using ammonia water with the flow rate of 1000ml/min-2000ml/min and the concentration of 10% -20% to clean and remove the photoresistor for 30 seconds-60 seconds at the cleaning temperature of 40 ℃ to 70 ℃;
and S3, executing the subsequent design process steps.
Wherein, the concentration of the ammonia water is preferably 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19% or 20%; the washing time is preferably 30 seconds, 35 seconds, 40 seconds, 45 seconds, 50 seconds, 55 seconds, or 60 seconds; the ammonia water concentration flow rate is preferably 1000ml/min, 1100ml/min, 1200ml/min, 1300ml/min, 1400ml/min, 1500ml/min, 1600ml/min, 1700ml/min, 1800ml/min, 1900ml/min or 2000 ml/min;
wherein, the cleaning temperature is preferably 40 ℃, 45 ℃, 50 ℃, 55 ℃, 60 ℃, 65 ℃ or 70 ℃.
Alternatively, the photoresist removing method according to the first to fifth embodiments is further improved, and can be used for cleaning the photoresist in 32nm, 28nm, 22nm, 20nm and less than 16nm processes.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The present invention has been described in detail with reference to the specific embodiments and examples, but these are not intended to limit the present invention. Many variations and modifications may be made by one of ordinary skill in the art without departing from the principles of the present invention, which should also be considered as within the scope of the present invention.
Claims (8)
1. A method for removing photoresist is characterized by comprising the following steps:
s1, forming a light resistance according to the design process, and etching the light resistance;
s2, washing and removing the light resistance in a preset time by using a weak alkaline cleaning solution;
and S3, executing the subsequent design process steps.
2. The resist stripping method according to claim 1, wherein: the weak alkaline cleaning solution is ammonia water.
3. The resist stripping method according to claim 2, wherein: when step S2 is performed, the ammonia concentration is 10% to 20%.
4. The resist stripping method according to claim 2, wherein: in step S2, the cleaning time is 30 seconds to 60 seconds.
5. The resist stripping method according to claim 2, wherein: when the step S2 is implemented, the ammonia water concentrated flow is 1000ml/min-2000 ml/min.
6. The resist stripping method according to claim 1, wherein: when step S2 is performed, the cleaning temperature range is 40 to 70 degrees celsius.
7. The resist removing method according to any one of claims 1 to 6, wherein: it can be used for cleaning photoresist in 32nm, 28nm, 22nm, 20nm and less than 16 nm.
8. The resist removing method according to any one of claims 1 to 6, wherein: it can be used for the photoresist cleaning and removing of logic devices or memory devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110600536.7A CN113394081A (en) | 2021-05-31 | 2021-05-31 | Photoresist removing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110600536.7A CN113394081A (en) | 2021-05-31 | 2021-05-31 | Photoresist removing method |
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| Publication Number | Publication Date |
|---|---|
| CN113394081A true CN113394081A (en) | 2021-09-14 |
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| CN202110600536.7A Pending CN113394081A (en) | 2021-05-31 | 2021-05-31 | Photoresist removing method |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1073923A (en) * | 1996-07-05 | 1998-03-17 | Taiyo Ink Mfg Ltd | Manufacture of photosensitive resin composition and printed-wiring board |
| JP2002261424A (en) * | 2001-03-05 | 2002-09-13 | Mitsubishi Paper Mills Ltd | Method of manufacturing printed-wiring board |
| US20030045076A1 (en) * | 2001-08-29 | 2003-03-06 | Umc Japan | Semiconductor device production method |
| US20090312216A1 (en) * | 2005-08-13 | 2009-12-17 | Techno Semichem Co., Ltd. | Photoresist Stripper Composition for Semiconductor Manufacturing |
| CN103425000A (en) * | 2012-05-24 | 2013-12-04 | 罗门哈斯电子材料有限公司 | Method for removing negative acting photoresists |
| CN108508711A (en) * | 2017-02-28 | 2018-09-07 | 山东浪潮华光光电子股份有限公司 | A kind of minimizing technology of positive photoresist |
| CN109388036A (en) * | 2017-08-03 | 2019-02-26 | 无锡华瑛微电子技术有限公司 | A kind of minimizing technology for removing liquid and photoresist of photoresist |
-
2021
- 2021-05-31 CN CN202110600536.7A patent/CN113394081A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1073923A (en) * | 1996-07-05 | 1998-03-17 | Taiyo Ink Mfg Ltd | Manufacture of photosensitive resin composition and printed-wiring board |
| JP2002261424A (en) * | 2001-03-05 | 2002-09-13 | Mitsubishi Paper Mills Ltd | Method of manufacturing printed-wiring board |
| US20030045076A1 (en) * | 2001-08-29 | 2003-03-06 | Umc Japan | Semiconductor device production method |
| US20090312216A1 (en) * | 2005-08-13 | 2009-12-17 | Techno Semichem Co., Ltd. | Photoresist Stripper Composition for Semiconductor Manufacturing |
| CN103425000A (en) * | 2012-05-24 | 2013-12-04 | 罗门哈斯电子材料有限公司 | Method for removing negative acting photoresists |
| CN108508711A (en) * | 2017-02-28 | 2018-09-07 | 山东浪潮华光光电子股份有限公司 | A kind of minimizing technology of positive photoresist |
| CN109388036A (en) * | 2017-08-03 | 2019-02-26 | 无锡华瑛微电子技术有限公司 | A kind of minimizing technology for removing liquid and photoresist of photoresist |
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