CN113380959A - 有机发光显示装置及其制造方法 - Google Patents
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- CN113380959A CN113380959A CN202110490833.0A CN202110490833A CN113380959A CN 113380959 A CN113380959 A CN 113380959A CN 202110490833 A CN202110490833 A CN 202110490833A CN 113380959 A CN113380959 A CN 113380959A
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- thin film
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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Abstract
提供了有机发光显示装置及其制造方法。有机发光显示装置包括:在基板上的发光元件;以及在发光元件上的封装单元,封装单元包括多个无机封装层以及在无机封装层之间的至少一个有机封装层,无机封装层中的至少一个包括多个无机绝缘层和在无机绝缘层之间的至少一个元件封装层,至少一个元件封装层包含疏水性元素和惰性元素中的至少一个。布置在无机绝缘层下的元件封装层使用疏水性元素和惰性元素中的任一个形成,而布置在无机绝缘层上的元件封装层使用疏水性元素和惰性元素中的另一个形成。
Description
本发明申请是申请日期为2017年10月30日、申请号为“201711033711.9”、发明名称为“有机发光显示装置及其制造方法”的发明专利申请的分案申请。
相关申请的交叉引用
本申请要求于2016年10月31日提交的韩国申请第10-2016-0143975号的优先权,其整体通过引用并入本文。
技术领域
本公开涉及有机发光显示装置及其制造方法。
背景技术
薄膜晶体管(TFT)被用作平板显示器的开关元件和/或驱动元件。根据用于有源层的材料,薄膜晶体管分为使用非晶硅的薄膜晶体管、使用多晶硅的薄膜晶体管和使用氧化物半导体的薄膜晶体管。其中,使用氧化物半导体的薄膜晶体管与使用非晶硅的薄膜晶体管相比具有高迁移率,并且与使用非晶硅的薄膜晶体管和使用多晶硅的薄膜晶体管相比具有低得多的漏电流和优异的可靠性。此外,使用氧化物半导体的薄膜晶体管具有确保与使用多晶硅的薄膜晶体管相比更均匀的阈值电压(Vth)分布的优点。
使用氧化物半导体的薄膜晶体管上形成有多个无机膜。当通过等离子体增强化学气相沉积(PECVD)形成无机膜时,无机膜中的氢含量为约15%至30%。当存在于无机膜中的氢扩散到薄膜晶体管的有源层中时,扩散的氢与存在于氧化物半导体中的氧反应,从而改变薄膜晶体管的特性(例如阈值电压),并且不利地导致薄膜晶体管的可靠性劣化。
发明内容
因此,本公开涉及基本上消除了由于相关技术的限制和缺点导致的一个或更多个问题的有机发光显示装置及其制造方法。
在一个方面中,本公开的实施例可提供有机发光显示装置以减少或防止薄膜晶体管的劣化,从而提高可靠性,以及制造有机发光显示装置的方法。
另外的特征和方面将在下面的说明书中进行阐述,而这些另外的特征和方面的一部分则由说明书而显见或者可通过实践本文所提供的发明构思而得知。发明构思的其他特征和方面可通过说明书给出的、或可由其推论的和权利要求以及附图中具体指出的结构来实现和获得。
为了实现发明构思的这些和其他方面,如所体现和广义描述的,提供了有机发光显示装置,其包括:在基板上的发光元件;以及在发光元件上的封装单元,封装单元包括多个无机封装层以及在无机封装层之间的至少一个有机封装层,无机封装层中的至少一个包括多个无机绝缘层和在无机绝缘层之间的至少一个元件封装层,至少一个元件封装层包含疏水性元素和惰性元素中的至少一个。布置在无机绝缘层下的元件封装层使用疏水性元素和惰性元素中的任一个形成,而布置在无机绝缘层上的元件封装层使用疏水性元素和惰性元素中的另一个形成。
在另一方面中,提供了制造有机发光显示装置的方法,其包括:在基板上提供发光元件;以及在发光元件上提供封装单元,提供封装单元包括:提供多个无机封装层,以及在无机封装层之间提供至少一个有机封装层,提供无机封装层中的至少一个包括提供多个无机绝缘层,和在无机绝缘层之间提供至少一个元件封装层,提供至少一个元件封装层包括提供疏水性元素和惰性元素中的至少一个。布置在无机绝缘层下的元件封装层使用疏水性元素和惰性元素中的任一个形成,而布置在无机绝缘层上的元件封装层使用疏水性元素和惰性元素中的另一个形成。
在审视以下附图及详细描述之后,本发明的其他系统、方法、特征及优点将对本领域技术人员变得显见。目的在于所有这些附加系统、方法、特征和优点被包括在本说明书内、在本公开的范围内,并且得到所附权利要求的保护。在这部分中没有应被认为限制那些权利要求的内容。下面结合本公开的实施例来讨论进一步的方面和优点。应理解,本公开的前述一般性描述和以下详细描述均为示例和说明性的,并且旨在提供对所要求保护的本公开的进一步说明。
附图说明
附图示出了本公开的实施方式并且与说明书一起用于说明本公开的各种原理,附图被包括以提供对本公开的进一步理解并且被并入在该说明书中且构成该说明书的一部分。
图1示出了根据本公开的实施例的有机发光显示装置。
图2是示出沿着图1的I-I'线截取的有机发光显示装置的截面图。
图3是示出图1所示的包括驱动薄膜晶体管的有机发光显示装置的截面图。
图4是图示了图2和图3中示出的无机绝缘层和元件封装层的特性的截面图。
图5A至5D是示出根据本公开的多个实施例的包括元件封装层的封装单元的截面图。
图6A至6E是示出制造图2所示的有机发光显示装置的方法的截面图。
图7是示出根据本公开的另一个实施例的包括图2和图3所示的无机绝缘层和元件封装层的有机发光显示装置的截面图。
在整个附图和详细说明书中,除非另有说明,否则相同的附图标记应理解为是指相同的元件、特征和结构。为了清楚、说明和方便,这些元件的相对尺寸和描绘可能被放大。
具体实施方式
现在将详细地参照本公开的一些实施例,这些实施例的示例在附图中示出。在以下描述中,当确定与本文件相关的公知功能或配置的详细描述不必要地模糊本发明构思的要点时,将省略其详细描述。所描述的处理步骤和/或操作的进展为示例;然而,除了必须以特定顺序发生的步骤和/或操作之外,步骤和/或操作的顺序不限于本文所阐述的那些,并且可以如本领域已知的那样被改变。相同的附图标记始终表示相同的元件。以下说明中使用的各个元件的名称仅为了便于书写说明书而选择,因此可能与实际产品中使用的那些不同。
在实施例的描述中,当结构被描述为设置在另一结构“上或上方”或者“下或下方”时,该描述应被解释为包括其中结构彼此接触以及在其间设置有第三结构的情况。
图1示出了根据本公开的一个实施例的有机发光显示装置。图2是沿着图1的I-I'线截取的有机发光显示装置的截面图。
如图1的示例所示,根据本公开的一个实施例的有机发光显示装置可包括有源区AA和焊盘区PA。焊盘区PA中可以有多个焊盘。多个焊盘各自可以向布置在有源区AA中的扫描线SL、数据线DL、低电压电源(VSS)线和高电压电源(VDD)线提供驱动信号。焊盘可通过覆盖有源区AA的封装单元140而暴露。例如,如图2所示,保护膜198可以例如通过粘合层196附着到封装单元140上。该保护膜可附着到封装单元140的上表面和侧表面上。粘合层可以是例如压敏粘合剂(PSA)。
有源区AA可通过包括发光元件120的单元像素来显示图像。单元像素可包括例如红色(R)子像素、绿色(G)子像素和蓝色(B)子像素,或者红色(R)子像素、绿色(G)子像素、蓝色(B)子像素和白色(W)子像素。每个子像素可包括像素驱动电路和连接至像素驱动电路的发光元件120。
像素驱动电路可包括开关薄膜晶体管T1、驱动薄膜晶体管T2和存储电容器Cst。当向扫描线SL提供扫描脉冲时,开关薄膜晶体管T1可以被接通,并且可以将提供给数据线DL的数据信号提供给存储电容器Cst和驱动薄膜晶体管T2的栅电极。
响应于提供给驱动薄膜晶体管T2的栅电极的数据信号,驱动薄膜晶体管T2可控制从高压电源(VDD)线161提供至发光元件130的电流(I),从而调节由发光元件120发射的光量。此外,虽然开关薄膜晶体管T1可以被断开,但是存储电容器Cst中充入的电压可能能够使驱动薄膜晶体管提供恒定电流(I)直到下一帧数据信号被提供,从而允许发光元件120连续发光。
图3是示出图1所示的包括驱动薄膜晶体管的有机发光显示装置的截面图。图5A至5D是示出根据本公开的多个实施例的包括元件封装层的封装单元的截面图。
如图3的示例中所示,驱动薄膜晶体管T2可包括栅电极106、有源层104、源电极108和漏电极110。栅电极106可以与有源层104交叠,并且栅极绝缘膜112可以插入其间。
有源层104可以与栅电极106在栅极绝缘膜112上交叠以在源电极108和漏电极110之间形成沟道。该有源层104可使用氧化物半导体形成,所述氧化物半导体包含例如以下中的至少一种金属:锌(Zn)、镉(Cd)、镓(Ga)、铟(In)、锡(Sn)、铪(Hf)和锆(Zr)。与包括多晶半导体层的薄膜晶体管相比,包括由该氧化物半导体组成的有源层104的薄膜晶体管T2可具有高电荷迁移率和低电流泄漏的优点,并因此显示出短的接通时间和长的断开时间。该有源层104可布置在栅电极106的上方以有效确保薄膜晶体管T2的稳定性。
源电极108和漏电极110可以是在栅极绝缘膜112上的单层或多层,其包含例如以下中的任一种或更多种:钼(Mo)、铝(Al)、铬(Cr)、金(Au)、钛(Ti)、镍(Ni)、钕(Nd)和铜(Cu)或其合金,但本公开的实施例不限于此。源电极108和漏电极110可以彼此面对,使得有源层104的沟道可以插入其间。同时,可以在源电极108与漏电极110之间暴露的有源层104上形成蚀刻停止物(未示出)。蚀刻停止物可减少氧和水分对源电极108与漏电极110之间暴露的有源层104的影响,从而减少或防止有源层104受到损害。
滤色器194可以布置在可覆盖驱动薄膜晶体管T2的保护膜116上。红色、绿色和蓝色滤色器194中的任一个可以布置在各个子像素中,并且这些滤色器可以交替地布置。可以在设置有滤色器194的基板101上形成由有机绝缘材料(例如光丙烯酸(photoacryl))制成的平坦化层118用于平坦化。平坦化层118和保护膜116可具有露出漏电极110的像素接触孔114。有机发光元件120可包括阳极122、形成在阳极122上的至少一个发光堆叠体(stack)124和形成在发光堆叠体124上的阴极126。
阳极122可以电连接至通过穿透平坦化层118的接触孔114而暴露的驱动薄膜晶体管T2的漏电极110。发光堆叠体124可以形成在由堤坝(bank)128提供的发光区域的阳极122上。至少一个发光堆叠体124中的每一个可通过将空穴相关层、有机发光层和电子相关层以该顺序或相反顺序堆叠在阳极122上来形成,并且可以在入射到滤色器194上时产生白色光。例如,发光堆叠体124可以包括可经由插入其间的电荷产生层而彼此面对的第一发光堆叠体和第二发光堆叠体。在一个实例中,第一发光堆叠体和第二发光堆叠体中的任一个的发光层可产生蓝色光,而第一发光堆叠体和第二发光堆叠体中的另一个的发光层可产生黄绿色光,从而通过第一发光堆叠体和第二发光堆叠体产生白色光。阴极126可以面对阳极122,并且发光堆叠体124可以插入其间。
封装单元140可减少或阻挡水分或氧渗透到可能易受外部水分或氧的影响的发光元件120中。因此,封装单元140可包括多个无机封装层142和布置在无机封装层142之间的至少一个有机封装层144。无机封装层142可布置为最上层。在一个实例中,封装单元140可包括至少两个无机封装层142和至少一个有机封装层144。
至少一个有机封装层144可用作缓冲物,以缓解在有机发光显示装置弯曲时各层之间的应力,并且可加强平坦化。有机封装层144可使用有机绝缘材料如丙烯酸树脂、环氧树脂、聚酰亚胺、聚乙烯或碳氧化硅(SiOC)形成。有机封装层144可形成为比垂直相邻的无机封装层142更小的线宽度,从而允许无机封装层142密封有机封装层144的上表面和侧表面。
无机封装层142可减少、最小化或阻挡外部水分和气体(例如,氢和/或氧)渗透到薄膜晶体管T1和T2以及有机发光元件120中。无机封装层142可形成为覆盖布置在无机封装层142下方的有机封装层144的上表面和侧表面。
各无机封装层142可包括多个无机绝缘层142a和布置在无机绝缘层142a之间的至少一个元件封装层142b。各无机绝缘层142a可减少、最小化或阻挡外部水分和气体(例如,氢和/或氧)渗透到薄膜晶体管T1和T2以及有机发光元件120中。无机绝缘层142a的总厚度可为至并且无机绝缘层142a的厚度可以不同或相同。例如,当形成总厚度为的无机绝缘层142a时,可以重复沉积厚度为的无机绝缘层142a十次。
无机绝缘层142a可使用可适于低温沉积的无机绝缘材料形成,例如硅氮化物(SiNx)、硅氧化物(SiOx)、氮氧化硅(SiON)或氧化铝(Al2O3)。因此,由于无机绝缘层142a可以在低温下沉积,所以可减少或防止可能易受高温影响的发光堆叠体124在无机绝缘层142a的沉积期间受到损害。
可使用疏水性元素和惰性元素中的至少一个在无机绝缘层142a之间形成元件封装层142b。元件封装层142b可通过以下形成:在形成无机绝缘层142a之后,用疏水性元素气体和惰性元素气体中的至少一个对无机绝缘层142a的上表面进行等离子体处理。结果,元件封装层142b的硅(Si)含量可低于相邻的无机绝缘层142a,如图4所示。具有较低硅(Si)含量的元件封装层142b可能比无机绝缘层142a软,而无机绝缘层142a可能比元件封装层142b硬。
同时,包含在元件封装层142b中的疏水性元素可基于碳氟(CF)元素,例如四氟甲烷(也称为四氟化碳)(CF4)或八氟环丁烷(也称为全氟环丁烷)(C4F8)。惰性元素可以是例如氩(Ar)、氦(He)、氮(N2)或氖(Ne)。
因为元件封装层142b中的疏水性元素可以排斥由元件封装层142b的上部(例如外部部分)提供的水分或气体(例如氧和/或氢),所以元件封装层142b可减少或防止水分或氢气的渗透。在一个实例中,元件封装层142b可以比相邻的无机绝缘层142a薄。例如,元件封装层142b的厚度可以为至如果元件封装层142b的厚度小于则可能无法确保足够的疏水性以减少或防止外部水分或氢气的渗透。此外,如果元件封装层142b的厚度超过则由于元件封装层142b较强的疏水性,无机绝缘层142a可能从元件封装层142b上剥离,而不是很好地形成在其上。
此外,元件封装层142b中的惰性元素可以使无机绝缘层142a中不稳定结合的氢和氧分离,并且可以将分离的氢和氧排放到无机绝缘层142a的外部(例如,用于形成元件封装层142b的真空室),从而除去无机绝缘层142a中不稳定结合的氢和氧。此外,通过等离子体处理而沉积在无机绝缘层142a上的惰性元素可以填充无机绝缘层142a的针孔,从而提高无机绝缘层142a的硬度。
在一个实例中,各元件封装层142b可以比相邻的无机绝缘层142a薄。例如,元件封装层142b的厚度可以为至如果元件封装层142b的厚度小于则由于等离子体处理期间产生的物理离子的强度弱,可能不会使无机绝缘层142a中不稳定结合的氢和氧分离,因此氢可能不会被排放到无机绝缘层142a的外部。此外,如果元件封装层142b的厚度超过则由于等离子体处理期间产生的物理离子的强度高,可能使无机绝缘层142a中稳定结合的硅、氢和氧分离,因此,无机绝缘层142a的绝缘性可能因此劣化。
元件封装层142b可形成为图5A至5D所示的任何结构。根据本公开的一个实施例的封装单元140的结构不限于图5A至5D示的那些,并且各种替代方案是可能的。
图5A示例所示的各元件封装层142b可使用疏水性元素和惰性元素中的任一单一元素形成。图5B示例所示的各元件封装层142b可使用至少两种元素的组合形成。例如,各元件封装层142b可使用疏水性元素和惰性元素的组合、不同疏水性元素的组合或不同惰性元素的组合来形成。例如,各个元件封装层142b的至少两种不同元素的组合比例可以不同或相同。
图5C示例所示的各元件封装层142b可使用与经由有机封装层144而面对该元件封装层142b的无机封装层142中另一元件封装层142b不同的材料形成。例如,布置在有机封装层144下方的无机封装层142中的元件封装层142b可使用疏水性元素和惰性元素中的任一个形成,而布置在有机封装层144上的无机封装层142中的元件封装层142b可以由疏水性元素和惰性元素中的另一个形成。
图5D示例所示的元件封装层142b可使用与经由有机封装层144而面对该元件封装层142b的另一元件封装层142b不同的材料形成。例如,布置在无机绝缘层142a下方的元件封装层142b可使用疏水性元素和惰性元素中的任一个形成,而布置在无机绝缘层142a上的元件封装层142b可使用疏水性元素和惰性元素中的另一个形成。
表1示出了根据本公开的一个实施例的设置有元件封装层142a的薄膜晶体管与未设置元件封装层的常规比较例薄膜晶体管之间的初始阈值电压和“i”小时之后的阈值电压(其中“i”表示正整数)的比较结果。从表1可以看出,与比较例相比,包括通过使用Ar作为惰性元素进行等离子体处理而形成的元件封装层142a的本公开的实施例和包括通过使用He元素进行等离子体处理而形成的元件封装层142a的本公开的实施例可以使薄膜晶体管在负方向上的阈值电压的变化最小化。因此,与比较例相比,本公开的实施例可表现出改善的负偏压温度照明应力(NBTiS)。
表1
图6A至6E是示出制造根据本公开的一个实施例的有机发光显示装置的方法的截面图。
首先,可以在基板101上形成包括由氧化物半导体制成的有源层的驱动薄膜晶体管和有机发光元件120。然后,如图6A示例所示,可通过诸如化学气相沉积(CVD)、低压化学气相沉积(LPCVD)或等离子体增强化学气相沉积(PECVD)的沉积方法在设置有有机物发光元件120的基板101上形成无机绝缘层142a。无机绝缘层142a可以例如使用SiOx、SiNx或SiON形成。
然后,可以使用疏水性元素气体和惰性元素气体中的任一个在真空下对无机绝缘层142a的表面进行例如一分钟以内的等离子体处理。因此,元件气体可以吸附在无机绝缘层142a的上表面上,由此形成元件封装层142b,如图6B示例所示。同时,用于形成元件封装层142b的等离子体处理可以在与形成无机绝缘层142a相同的真空室中进行,或者可以在独立于用于形成无机绝缘层142a的真空室的不同真空室中进行。无机绝缘层142a和元件封装层142b的沉积过程可以重复至少一次,由此形成具有多层结构的无机封装层142,如图6C示例所示。
然后,可以将有机绝缘材料涂覆在基板(设置有无机封装层142)上以形成有机封装层144,如图6D示例所示。有机封装层144可使用有机绝缘材料如丙烯酸树脂、环氧树脂、聚酰亚胺、聚乙烯或碳氧化硅(SiOC)形成。
然后,可以在设置有有机封装层144的基板101上重复沉积无机绝缘层142a和元件封装层142b至少一次,以形成具有多层结构的无机封装层142,如图6E示例所示。然后,可通过粘合层196将保护膜198附着到封装单元140的上表面和侧表面上。
虽然已经描述了由氧化物半导体制成的驱动薄膜晶体管T2的有源层104作为示例,但是开关薄膜晶体管T1的有源层204也可以由氧化物半导体制成,如图7示例所示。也就是说,图7所示的开关薄膜晶体管T1的有源层204可以由氧化物半导体制成,并且驱动薄膜晶体管T2的有源层104可以由多晶半导体制成。此外,直接形成在基板101上的栅极驱动器(未示出)和复用器(未示出)中的至少一个驱动电路可包括薄膜晶体管,所述薄膜晶体管可包括由多晶半导体制成的有源层。多晶半导体层可具有较高的迁移率(至少100cm2/Vs),因此,其可具有比氧化物半导体层更低的能量消耗和更好的可靠性。因此,多晶半导体可适合应用于栅极驱动器和/或复用器(MUX)。因此,可以将设置有元件封装层142b的封装单元140布置在图7所示的具有由氧化物半导体制成的有源层104的开关薄膜晶体管T1上,并且也可以将设置有元件封装层142b的封装单元140布置在具有由多晶半导体制成的有源层204的驱动薄膜晶体管T2上。因此,图7示例所示的有机发光显示装置可通过元件封装层142b减小或阻挡外部气体、氢和水分渗透到开关薄膜晶体管T1的有源层104和驱动薄膜晶体管T2的有源层204中,从而减少或防止开关薄膜晶体管T1和驱动薄膜晶体管T2的劣化。
根据本公开的一个实施例的有机发光显示装置可包括封装单元,所述封装单元包括无机封装层和布置在无机封装层之间的至少一个有机封装层。各无机封装层可以包括可交替堆叠的无机绝缘层和元件封装层。根据本公开的一个实施例的有机发光显示装置可以通过可包含疏水性元素气体和惰性元素气体中的至少一个的元件封装层来减少或阻挡氢和水分渗透到薄膜晶体管中。因此,根据本公开的一个实施例的有机发光显示装置可减小或防止薄膜晶体管的劣化,从而提高可靠性。
对本领域技术人员显见的是,在不脱离本公开的技术构思或范围的情况下可以对本公开进行各种修改和变化。因此,目的在于本公开的实施例可以覆盖本公开的修改和变化,只要这些修改和变化落入所附权利要求及其等同的范围内即可。
Claims (21)
1.一种有机发光显示装置,包括:
在基板上的发光元件;以及
在所述发光元件上的封装单元,所述封装单元包括:
多个无机封装层,所述无机封装层中的至少一个包括:
多个无机绝缘层;和
在所述无机绝缘层之间的至少一个元件封装层,所述至少一个元件封装层包含疏水性元素和惰性元素中的至少一个;以及
在所述无机封装层之间的至少一个有机封装层,
其中,布置在所述无机绝缘层下的所述元件封装层使用所述疏水性元素和所述惰性元素中的任一个形成,而布置在所述无机绝缘层上的所述元件封装层使用所述疏水性元素和所述惰性元素中的另一个形成。
2.根据权利要求1所述的有机发光显示装置,还包括:
连接至所述发光元件的驱动薄膜晶体管;和
连接至所述驱动薄膜晶体管的开关薄膜晶体管,
其中所述驱动薄膜晶体管和所述开关薄膜晶体管中的至少一个包括包含氧化物半导体的有源层。
3.根据权利要求1所述的有机发光显示装置,其中:
所述疏水性元素基于碳氟CF元素;以及
所述惰性元素包括Ar、He、N2和Ne中的至少一种。
4.根据权利要求3所述的有机发光显示装置,其中,所述碳氟CF元素包括CF4和C4F8中的至少一种。
5.根据权利要求3所述的有机发光显示装置,还包括:
连接至所述发光元件的驱动薄膜晶体管;和
连接至所述驱动薄膜晶体管的开关薄膜晶体管,
其中所述驱动薄膜晶体管和所述开关薄膜晶体管中的至少一个包括包含氧化物半导体的有源层。
6.根据权利要求1所述的有机发光显示装置,其中,所述无机绝缘层包含硅氮化物SiNx、硅氧化物SiOx和氮氧化硅SiON中的一个或多个。
7.根据权利要求6所述的有机发光显示装置,还包括:
连接至有机发光元件的驱动薄膜晶体管;和
连接至所述驱动薄膜晶体管的开关薄膜晶体管,
其中所述驱动薄膜晶体管和所述开关薄膜晶体管中的至少一个包括包含氧化物半导体的有源层。
9.根据权利要求8所述的有机发光显示装置,还包括:
连接至有机发光元件的驱动薄膜晶体管;和
连接至所述驱动薄膜晶体管的开关薄膜晶体管,
其中所述驱动薄膜晶体管和所述开关薄膜晶体管中的至少一个包括包含氧化物半导体的有源层。
10.根据权利要求1所述的有机发光显示装置,其中:
所述有机封装层上的所述无机封装层的层结构相对于所述有机封装层与所述有机封装层下的所述无机封装层的层结构对称。
11.根据权利要求10所述的有机发光显示装置,其中:
所述有机封装层上的所述无机封装层具有其中布置在所述无机绝缘层下的所述元件封装层使用所述疏水性元素形成,而布置在所述无机绝缘层上的所述元件封装层使用所述惰性元素形成的层结构,以及
所述有机封装层下的所述无机封装层具有其中布置在所述无机绝缘层下的所述元件封装层使用所述惰性元素形成,而布置在所述无机绝缘层上的所述元件封装层使用所述疏水性元素形成的层结构。
12.一种制造有机发光显示装置的方法,所述方法包括:
在基板上提供发光元件;以及
在所述发光元件上提供封装单元,所述提供封装单元包括:
提供多个无机封装层,提供所述无机封装层中的至少一个包括:
提供多个无机绝缘层;和
在所述无机绝缘层之间提供至少一个元件封装层,所述提供至少一个元件封装层包括提供疏水性元素和惰性元素中的至少一个;以及
在所述无机封装层之间提供至少一个有机封装层,
其中,布置在所述无机绝缘层下的所述元件封装层使用所述疏水性元素和所述惰性元素中的任一个形成,而布置在所述无机绝缘层上的所述元件封装层使用所述疏水性元素和所述惰性元素中的另一个形成。
13.根据权利要求12所述的方法,其中:
所述疏水性元素基于碳氟CF元素;以及
所述惰性元素包括Ar、He、N2和Ne中的至少一种。
14.根据权利要求13所述的方法,其中所述碳氟CF元素包括CF4和C4F8中的至少一种。
15.根据权利要求13所述的方法,还包括:
提供连接至所述发光元件的驱动薄膜晶体管;和
提供连接至所述驱动薄膜晶体管的开关薄膜晶体管,
其中所述驱动薄膜晶体管和所述开关薄膜晶体管中的至少一个包括包含氧化物半导体的有源层。
16.根据权利要求12所述的方法,其中,所述提供多个无机封装层包括:
在设置有所述发光元件的基板上沉积无机绝缘材料以形成所述无机绝缘层;以及
使用所述疏水性元素和所述惰性元素气体中的至少一个对所述无机绝缘层的表面进行等离子体处理,以形成所述元件封装层。
17.根据权利要求16所述的方法,其中:
所述疏水性元素基于碳氟CF元素;以及
所述惰性元素包括Ar、He、N2和Ne中的至少一种。
18.根据权利要求17所述的方法,其中所述碳氟CF元素包括CF4和C4F8中的至少一种。
19.根据权利要求16所述的方法,还包括:
提供连接至所述发光元件的驱动薄膜晶体管;和
提供连接至所述驱动薄膜晶体管的开关薄膜晶体管,
其中所述驱动薄膜晶体管和所述开关薄膜晶体管中的至少一个包括包含氧化物半导体的有源层。
20.根据权利要求12所述的方法,其中:
所述有机封装层上的所述无机封装层的层结构相对于所述有机封装层与所述有机封装层下的所述无机封装层的层结构对称。
21.根据权利要求20所述的方法,其中:
所述有机封装层上的所述无机封装层具有其中布置在所述无机绝缘层下的所述元件封装层使用所述疏水性元素形成,而布置在所述无机绝缘层上的所述元件封装层使用所述惰性元素形成的层结构,以及
所述有机封装层下的所述无机封装层具有其中布置在所述无机绝缘层下的所述元件封装层使用所述惰性元素形成,而布置在所述无机绝缘层上的所述元件封装层使用所述疏水性元素形成的层结构。
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US10566572B2 (en) | 2020-02-18 |
CN108023027A (zh) | 2018-05-11 |
US20180123086A1 (en) | 2018-05-03 |
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