CN113373418A - Magnetron sputtering cathode target for preparing nanoclusters - Google Patents
Magnetron sputtering cathode target for preparing nanoclusters Download PDFInfo
- Publication number
- CN113373418A CN113373418A CN202110664482.0A CN202110664482A CN113373418A CN 113373418 A CN113373418 A CN 113373418A CN 202110664482 A CN202110664482 A CN 202110664482A CN 113373418 A CN113373418 A CN 113373418A
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- China
- Prior art keywords
- target
- head
- target head
- fixed
- magnetron sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 21
- 230000007246 mechanism Effects 0.000 claims abstract description 11
- 229910000831 Steel Inorganic materials 0.000 claims abstract description 9
- 239000010959 steel Substances 0.000 claims abstract description 9
- 238000004544 sputter deposition Methods 0.000 claims description 23
- 238000009434 installation Methods 0.000 claims description 11
- 238000007789 sealing Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 abstract description 16
- 239000000758 substrate Substances 0.000 abstract description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052786 argon Inorganic materials 0.000 abstract description 12
- -1 argon ions Chemical class 0.000 abstract description 11
- 239000001307 helium Substances 0.000 abstract description 11
- 229910052734 helium Inorganic materials 0.000 abstract description 11
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract description 11
- 239000007888 film coating Substances 0.000 abstract description 6
- 238000009501 film coating Methods 0.000 abstract description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 210000003437 trachea Anatomy 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003433 contraceptive agent Substances 0.000 description 1
- 230000002254 contraceptive effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a magnetron sputtering cathode target for preparing nanoclusters, which comprises a connecting rod, a target head and a target cover, wherein magnetic steel is arranged at one end of the connecting rod; the target cover is provided with a plurality of nozzles communicated with the target cover, the target head is provided with an air inlet, and the target head is internally provided with an air equalizing mechanism communicated with the air inlet. The gas homogenizing mechanism arranged inside the target head can uniformly disperse the introduced helium inside the target head. The plurality of nozzles annularly arranged on the target cover ensure that helium can be sprayed out from all directions of the target cover so as to ensure that sputtered argon ions can move towards the direction of the sample substrate as much as possible and ensure the film coating speed.
Description
Technical Field
The invention relates to the technical field of sputtering coating, in particular to a magnetron sputtering cathode target for preparing nanoclusters
Background
Magnetron sputtering is one type of Physical Vapor Deposition (PVD). The general sputtering method can be used for preparing multi-materials such as metal, semiconductor, insulator and the like, and has the advantages of simple equipment, easy control, large film coating area, strong adhesive force and the like. Magnetron sputtering is the collision process of incident particles with a target. Incident particles undergo a complex scattering process in the target, colliding with target atoms, imparting a portion of their momentum to the target atoms, which in turn collide with other target atoms, forming a cascade process. In such a cascade process, certain target atoms near the surface gain enough momentum to move outward, away from the target, to be sputtered.
The sputtered ions fly to the sample substrate and are deposited on the sample substrate, and the film coating work of the sample substrate is finally completed along with the increasing deposition. Since the sputtered ions are flown in all directions, they cannot be precisely flown to the sample substrate, which results in a decrease in the film deposition rate. Meanwhile, the position of the existing sputtering target cannot be adjusted, and when different sample substrates are coated, the target head cannot be aligned to the sample substrates due to the position difference of the sample substrates, so that the coating speed is low, and the coating is not uniform.
Disclosure of Invention
The present invention aims to provide a magnetron sputtering cathode target for preparing nanoclusters, which is used for solving the technical problems in the background art.
The magnetron sputtering cathode target for preparing the nanoclusters comprises a connecting rod, a target head and a target cover, wherein magnetic steel is arranged at one end of the connecting rod, the target cover is sleeved outside the target head in a sealing mode, a cavity is formed in the target head, a cathode sputtering plate is fixed at the end portion of the target head, and the cathode sputtering plate is exposed when the target cover and the target head are fixed in a sealing mode; the target cover is provided with a plurality of nozzles communicated with the target cover, the target head is provided with an air inlet, and the target head is internally provided with an air equalizing mechanism communicated with the air inlet.
In a preferred embodiment, the target head is arranged to be open away from the fixed end of the connecting rod, the cathode sputtering plate is fixed at the open of the target head through a fixing frame, a through hole is arranged in the middle of the target cover, and the position of the through hole corresponds to the position of the cathode sputtering plate.
In a preferred embodiment, the air inlet interfaces are symmetrically arranged on the target head, and when the target head is fixed with the target cover, the target head is positioned outside the target cover.
In a preferred embodiment, the gas-distributing mechanism comprises an annular gas pipe fixed inside the target head and a plurality of gas outlets circumferentially arranged on the annular gas pipe, and the annular gas pipe is communicated with the gas inlet interface.
In a preferred embodiment, a supporting plate is arranged in the target head, and the magnetic steels are fixed on the supporting plate in a row.
In a preferred embodiment, the connecting rod comprises two fixing rods at two ends and a bellows arranged between the two fixing rods, and an adjustable mounting part is hinged on each fixing rod.
In a preferred embodiment, the adjustable installation part comprises a support column hinged to the fixed rod and provided with an external thread at the bottom, a support cylinder in threaded connection with the support column, and a mounting disc fixed at the bottom of the support cylinder, wherein a cavity for receiving the threaded part of the support column is arranged in the support cylinder.
In a preferred embodiment, the bottom of the fixed rod is provided with a mounting block, and the supporting column is hinged with the fixed rod through the mounting block
The technical scheme of the invention has the beneficial effects that:
1. the gas homogenizing mechanism arranged inside the target head can uniformly disperse the introduced helium inside the target head. The plurality of nozzles annularly arranged on the target cover ensure that helium can be sprayed out from all directions of the target cover so as to ensure that sputtered argon ions can move towards the direction of the sample substrate as much as possible and ensure the film coating speed.
2. The bellows has deformability, when will changing the target head orientation, through adjusting the height of one of them adjustable mounting part, can realize that target head inclination adjusts. When the adjustable installation piece is adjusted, the threaded part of the supporting column is rotatably received or the accommodating cavity is discharged, so that the height of the two adjustable installation pieces is the same. Thereby ensuring that the target head can be aligned with the sample substrate. The support column is hinged with the mounting block through a hinge shaft, so that the connecting rod can be inclined.
Drawings
Figure 1 is a schematic view of the overall structure of the present invention,
figure 2 is a schematic view of another perspective of the target head and target shield of the present invention,
FIG. 3 is a top view of the gas uniformizing mechanism and the target head of the present invention,
figure 4 is a side view of the adjustable mount of the present invention hinged to a fixed rod,
fig. 5 is a front cross-sectional view of a target head and target shield of the present invention.
The attached figures indicate that: the device comprises a connecting rod 1, a fixing rod 2, a corrugated pipe 3, a target head 4, a target cover 5, a cathode sputtering plate 6, a nozzle 7, an air inlet port 8, an annular air pipe 9, an air outlet 10, a through hole 11, a fixing frame 12, a supporting plate 13, magnetic steel 14, an adjustable mounting part 15, a supporting column 16, a supporting cylinder 17, a mounting disc 18, a mounting block 19, a hinged shaft 20 and a flange 21.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. The embodiments of the present invention have been presented for purposes of illustration and description, and are not intended to be exhaustive or limited to the invention in the form disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art. The embodiment was chosen and described in order to best explain the principles of the invention and the practical application, and to enable others of ordinary skill in the art to understand the invention for various embodiments with various modifications as are suited to the particular use contemplated.
Referring to fig. 1-5, the magnetron sputtering cathode target for preparing nanoclusters in the technical scheme of the invention comprises a connecting rod 1, a target 4 and a target cover 5, wherein the target 4 and one end of the connecting rod 1 are provided with magnetic steel 14, the target cover 5 is sleeved outside the target 4 in a sealing manner, a cavity is arranged in the target 4, a cathode sputtering plate 6 is fixed at the end part of the target 4, and the cathode sputtering plate 6 is exposed when the target cover 5 and the target 4 are fixed in a sealing manner; target cover 5 is fitted with a contraceptive ring and is equipped with spout 7 with a plurality of and target cover 5 intercommunication, be provided with air inlet port 8 on the target head 4, the inside homoenergetic mechanism that communicates with air inlet port 8 that is provided with of target head 4.
The magnetron sputtering cathode target is fixed on a deposition chamber through a flange 21, wherein one end provided with the target head 4 is positioned in the deposition chamber, the flange 21 enables the magnetron sputtering cathode target to be hermetically connected with the deposition chamber, and the deposition chamber is in a vacuum state. When the device works, argon gas with the pressure of 0.1-10Pa is firstly introduced into the vacuum chamber, the cathode sputtering plate 6 is connected with a direct current negative voltage power supply, glow discharge is generated under the action of the direct current negative voltage power supply, ionized argon ions have positive charges and are attracted by the cathode sputtering plate 6 to further accelerate bombardment of the cathode sputtering plate 6, and the argon ions are splashed. The gas inlet interface 8 is filled with helium gas and is sprayed out from the nozzle 7, and the helium gas sprayed out from the nozzle 7 carries splashed argon ions to be deposited on the sample substrate to form a coating.
The target head 4 is internally provided with a supporting plate 13, the magnetic steels 14 are fixed on the supporting plate 13 in rows, and the magnetic steels 14 are arranged to enhance the action of a magnetic field, so that argon ions are gathered and accelerated to impact the cathode sputtering plate 6, and the sufficient argon ion sputtering amount is ensured. The gas homogenizing mechanism arranged inside the target head 4 can uniformly disperse the introduced helium gas inside the target head 4. The nozzles 7 annularly arranged on the target cover 5 ensure that helium can be sprayed out from all directions of the target cover 5, so that the sputtered argon ions can move towards the direction of the sample substrate as much as possible, and the film coating speed is ensured.
The target head 4 is far away from and is set up to uncovered with connecting rod 1 stiff end, cathode sputtering board 6 passes through mount 12 to be fixed in the uncovered department of target head 4, 5 middle parts of target guard are equipped with through-hole 11, through-hole 11 positions have cathode sputtering board 6 position corresponding. Argon ion can get into through-hole 11 and bombard on the cathode sputtering board 6, and the argon ion after the bombardment can be sputtered away towards all directions, sets up target cover 5 and guarantees that 4 internal seal environment of target head can make from spout 7 spun helium volume sufficient, and then makes spun helium have certain acceleration to better wrapping up and holding the argon ion.
The air inlet interfaces 8 are symmetrically arranged on the target head 4, and when the target head 4 is fixed with the target cover 5, the target head 4 is positioned outside the target cover 5. It constructs including fixing annular trachea 9 and the circumference a plurality of gas outlet 10 of setting on annular trachea 9 inside target head 4 to all mechanism, annular trachea 9 and air inlet interface 8 intercommunication. Helium introduced from the air inlet interface 8 enters the annular air pipe 9 and is uniformly dispersed and discharged into the target head 4 through the air outlets 10 which are arranged on the annular air pipe 9, so that the gas entering the target head 4 is dispersed.
The connecting rod 1 comprises two fixing rods 2 at two ends and a corrugated pipe 3 arranged between the two fixing rods 2, and the fixing rods 2 are all hinged with adjustable installation parts 15. The adjustable mounting member 15 is used for fixing the magnetron sputtering cathode target. When the magnetron sputtering cathode target is fixed, the cathode sputtering plate 6 faces the sample substrate, and in order to adapt to film coating of sample substrates in different current situations, the orientation of the target head 4 can be changed through the adjustable mounting piece 15, so that the cathode sputtering plate 6 is ensured to face the sample substrate.
The adjustable installation part 15 comprises a supporting column 16 which is hinged to the fixing rod 2 and provided with an external thread at the bottom, a supporting cylinder 17 which is in threaded connection with the supporting column 16, and an installation disc 18 which is fixed to the bottom of the supporting cylinder 17, wherein a containing cavity for containing a threaded part of the supporting column 16 is formed in the supporting cylinder 17. The bottom of the fixed rod 2 is provided with a mounting block 19, and the supporting column 16 is hinged with the fixed rod 2 through the mounting block 19.
Bellows 3 has deformability, when changing target 4 orientation, through adjusting the height of one of them adjustable mounting 15, can realize target 4 inclination and adjust. During adjustment, the threaded part of the support column 16 is rotated into or out of the cavity, so that the two adjustable mounting parts 15 have the same height. Thereby ensuring that the target 4 can be aligned with the sample substrate. The supporting column 16 is hinged with the mounting block 19 through a hinge shaft 20, so that the connecting rod 1 can be inclined conveniently.
It is to be understood that the described embodiments are merely a few embodiments of the invention, and not all embodiments. All other embodiments, which can be derived by one of ordinary skill in the art and related arts based on the embodiments of the present invention without any creative effort, shall fall within the protection scope of the present invention. Structures, devices, and methods of operation not specifically described or illustrated herein are generally practiced in the art without specific recitation or limitation.
Claims (8)
1. A magnetron sputtering cathode target for preparing nanoclusters is characterized in that: the device comprises a connecting rod, a target head and a target cover, wherein the target head is provided with a magnetic steel at one end of the connecting rod, the target cover is sleeved outside the target head in a sealing manner, a cavity is arranged in the target head, a cathode sputtering plate is fixed at the end part of the target head, and the cathode sputtering plate is exposed when the target cover and the target head are fixed in a sealing manner; the target cover is provided with a plurality of nozzles communicated with the target cover, the target head is provided with an air inlet, and the target head is internally provided with an air equalizing mechanism communicated with the air inlet.
2. The magnetron sputtering cathode target for producing nanoclusters as recited in claim 1, wherein: the target head is far away from and the connecting rod stiff end sets up to uncovered, the uncovered department at the target head is fixed through the mount to the cathode sputtering board, the target guard middle part is equipped with the through-hole, the through-hole position has the cathode sputtering board position corresponding.
3. The magnetron sputtering cathode target for producing nanoclusters as recited in claim 1, wherein: the air inlet interfaces are symmetrically arranged on the target head, and when the target head is fixed with the target cover, the target head is positioned outside the target cover.
4. The magnetron sputtering cathode target for producing nanoclusters as recited in claim 1, wherein: the gas distributing mechanism comprises an annular gas pipe fixed inside the target head and a plurality of gas outlets circumferentially arranged on the annular gas pipe, and the annular gas pipe is communicated with the gas inlet interface.
5. The magnetron sputtering cathode target for producing nanoclusters as recited in claim 1, wherein: the target head is internally provided with a supporting plate, and the magnetic steels are fixed on the supporting plate in rows.
6. The magnetron sputtering cathode target for producing nanoclusters as recited in claim 1, wherein: the connecting rod includes two dead levers at both ends and is provided with the bellows between two dead levers, two all set up on the dead lever and articulate there is adjustable installed part.
7. The magnetron sputtering cathode target for producing nanoclusters as recited in claim 6, wherein: the adjustable installation part comprises a support column, a support cylinder and an installation disc, wherein the support column is hinged to the fixed rod, the bottom of the support column is provided with an external thread, the support cylinder is in threaded connection with the support column, the installation disc is fixed to the bottom of the support cylinder, and an accommodating cavity used for accommodating a threaded portion of the support column is formed in the support cylinder.
8. The magnetron sputtering cathode target for producing nanoclusters as recited in claim 7, wherein: the bottom of the fixed rod is provided with an installation block, and the support column is hinged with the fixed rod through the installation block.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110664482.0A CN113373418A (en) | 2021-06-16 | 2021-06-16 | Magnetron sputtering cathode target for preparing nanoclusters |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110664482.0A CN113373418A (en) | 2021-06-16 | 2021-06-16 | Magnetron sputtering cathode target for preparing nanoclusters |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113373418A true CN113373418A (en) | 2021-09-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110664482.0A Pending CN113373418A (en) | 2021-06-16 | 2021-06-16 | Magnetron sputtering cathode target for preparing nanoclusters |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113373418A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4478701A (en) * | 1983-12-30 | 1984-10-23 | Rca Corporation | Target support adjusting fixture |
| JPS61110763A (en) * | 1984-11-02 | 1986-05-29 | Nec Corp | Sputtering electrode |
| US20040159539A1 (en) * | 2003-02-13 | 2004-08-19 | Crowley Daniel T. | Cylindrical magnetron target and spindle apparatus |
| CN201942743U (en) * | 2010-12-13 | 2011-08-24 | 中国科学院沈阳科学仪器研制中心有限公司 | Magnetic control target air-distribution structure |
| CN102534521A (en) * | 2010-12-13 | 2012-07-04 | 中国科学院沈阳科学仪器研制中心有限公司 | Magnetron target gas distribution structure |
| CN103849843A (en) * | 2014-01-17 | 2014-06-11 | 中国科学院上海技术物理研究所 | Magnetron co-sputtering equipment with five target heads |
| CN208201109U (en) * | 2018-04-02 | 2018-12-07 | 杭州赛威斯真空技术有限公司 | Integral type for magnetron sputtering production line sputters round target |
| CN210560702U (en) * | 2019-01-30 | 2020-05-19 | 南京大学深圳研究院 | Magnetron sputtering target gun |
-
2021
- 2021-06-16 CN CN202110664482.0A patent/CN113373418A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4478701A (en) * | 1983-12-30 | 1984-10-23 | Rca Corporation | Target support adjusting fixture |
| JPS61110763A (en) * | 1984-11-02 | 1986-05-29 | Nec Corp | Sputtering electrode |
| US20040159539A1 (en) * | 2003-02-13 | 2004-08-19 | Crowley Daniel T. | Cylindrical magnetron target and spindle apparatus |
| CN201942743U (en) * | 2010-12-13 | 2011-08-24 | 中国科学院沈阳科学仪器研制中心有限公司 | Magnetic control target air-distribution structure |
| CN102534521A (en) * | 2010-12-13 | 2012-07-04 | 中国科学院沈阳科学仪器研制中心有限公司 | Magnetron target gas distribution structure |
| CN103849843A (en) * | 2014-01-17 | 2014-06-11 | 中国科学院上海技术物理研究所 | Magnetron co-sputtering equipment with five target heads |
| CN208201109U (en) * | 2018-04-02 | 2018-12-07 | 杭州赛威斯真空技术有限公司 | Integral type for magnetron sputtering production line sputters round target |
| CN210560702U (en) * | 2019-01-30 | 2020-05-19 | 南京大学深圳研究院 | Magnetron sputtering target gun |
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Application publication date: 20210910 |