CN113363730A - Super-surface type electromagnetic induction transparent resonance device of terahertz waveband - Google Patents
Super-surface type electromagnetic induction transparent resonance device of terahertz waveband Download PDFInfo
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- 230000005674 electromagnetic induction Effects 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 125000006850 spacer group Chemical group 0.000 claims abstract description 22
- 230000000737 periodic effect Effects 0.000 claims description 4
- 230000035945 sensitivity Effects 0.000 abstract description 8
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000002834 transmittance Methods 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 12
- 238000004364 calculation method Methods 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 6
- 238000005086 pumping Methods 0.000 description 5
- 230000001066 destructive effect Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000005445 natural material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
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Abstract
The invention discloses a super-surface type electromagnetic induction transparent resonance device in a terahertz waveband, wherein a resonance unit is formed by combining a dielectric plate spacer substrate, a first double-helix structure and a second double-helix structure, a plurality of groups of resonance units are periodically arranged to form the super-surface type resonance device, when the structural parameters of the resonance device are changed, because the sensitivity of the resonance frequency of the bright mode and the dark mode to the change of the structural parameters is basically kept consistent, EIT-like resonance can still be realized, compared with other super-surface electromagnetic induction transparent resonance devices, the robustness of the structural parameters is beneficial to device processing and practical engineering application, and the electromagnetic induction transparency-like resonance device insensitive to structural parameter change and the adjustable electromagnetic induction transparency-like phenomenon under the condition of unchanged super-surface structural parameters are realized.
Description
Technical Field
The invention relates to the technical field of terahertz, in particular to a super-surface type electromagnetic induction transparent resonance device in a terahertz waveband.
Background
The terahertz wave band is between infrared and microwave, and is generally defined to be 0-10 THz. The general natural material can not respond to terahertz waves, the artificial electromagnetic super surface is a periodic artificial micro-atomic structure, the transmission characteristic of the artificial electromagnetic super surface can be changed according to different special structure designs and environmental conditions, and a unique and novel functional device can be created, so that the electromagnetic wave transmission can be controlled at will. Electromagnetically induced Transparency phenomenon, known by the English name Electromagnetically induced Transparency, abbreviated as EIT. The quantum interference effect occurs in an atomic three-level system, and a narrow-band transparent window appears due to the quantum interference effect on the broadband absorption electromagnetic spectrum of the original opaque medium. The EIT effect can be generated only by extremely strict experimental conditions such as ultralow temperature, high energy and the like in the traditional EIT realization. The super surface can generate EIT-like effect under normal condition by mutual destructive interference of light mode and dark mode resonance.
However, when the structural parameters of the super-surface resonance device are changed, the sensitivity of the resonance frequencies of a bright mode and a dark mode to the parameter changes is different, so that the sensitivity between the resonance frequencies of the bright mode and the dark mode is greatly detuned, the EIT-like effect disappears, and most super-surface structures are not adjustable.
Disclosure of Invention
The invention aims to provide a super-surface type electromagnetic induction transparent resonance device in a terahertz waveband, which is an electromagnetic induction transparent phenomenon-like resonance device insensitive to structural parameter change and an adjustable electromagnetic induction transparent phenomenon under the condition of unchanged super-surface structural parameters.
In order to achieve the purpose, the terahertz waveband super-surface type electromagnetic induction transparent resonance device adopted by the invention comprises a plurality of groups of resonance units, wherein the plurality of groups of resonance units are periodically arranged, each group of resonance units comprises a dielectric plate spacer substrate, a first double-spiral structure and a second double-spiral structure, the first double-spiral structure and the second double-spiral structure are fixedly connected with the dielectric plate spacer substrate and are respectively positioned on the lateral sides of the dielectric plate spacer substrate, and the first double-spiral structure and the second double-spiral structure are symmetrically arranged by taking the dielectric plate spacer substrate as a center;
the first double-helix structure comprises a first medium helix structure and a second medium helix structure, the centers of the first medium helix structure and the second medium helix structure are on the same vertical line segment, the first medium helix structure is a counterclockwise helix extending from inside to outside, the number of turns N is 2.5, and the second medium helix structure is in a shape that the first medium helix structure rotates 180 degrees around the origin.
The second double-helix structure comprises a third medium helix structure and a fourth medium helix structure, the centers of the third medium helix structure and the fourth medium helix structure are on the same vertical line segment, the third medium helix structure is a counterclockwise helix extending from inside to outside, the number of turns N is 2.5, and the shape of the fourth medium helix structure is that the third medium helix structure rotates 180 degrees around the origin.
The number of the period p of the resonance units arranged along the x axis and the y axis is the same and is smaller than the terahertz wavelength of the working waveband, and the thicknesses of the first double-spiral structure and the second double-spiral structure are the same.
The range value of the distance g between adjacent spiral arms of the first medium spiral structure, the second medium spiral structure, the third medium spiral structure and the fourth medium spiral structure is 16-30 mu m, the range value of the arm width w of each spiral arm is 40-50 mu m, the range value of the inner radius R is 0-10 mu m, the range value of the outer radius R is 197-233 mu m, the spiral growth rate b is determined by dividing the sum of the distance g between the adjacent spiral arms and the arm width w of each spiral arm by 2 pi, the range of the distance between the central points of the two spirals on the same side is 400-420 mu m, the range of the spiral thickness is 130-150 mu m, and the thickness of the spacer substrate is 400-500 mu m.
The dielectric constant of the dielectric slab substrate is smaller than that of the first double-spiral structure and that of the second double-spiral structure, and the dielectric constant is larger than 1.5 and smaller than or equal to 3.
The invention relates to a super-surface type electromagnetic induction transparent resonance device of a terahertz waveband, which is characterized in that a resonance unit is formed by combining a dielectric plate spacer substrate, a first double-helix structure and a second double-helix structure, a plurality of groups of resonance units are periodically arranged to form the super-surface type resonance device, when the structural parameters of the resonance device are changed, such as the width of the spiral arm, the gap between the spiral leading arms or the height of the spiral are changed in a large range, because the sensitivity of the resonance frequency of the bright mode and the dark mode to the change of the structural parameters is basically kept consistent, EIT-like resonance can still be realized, compared with other super-surface electromagnetic induction transparent resonance devices, the robustness of the structural parameters is beneficial to device processing and practical engineering application, and the electromagnetic induction transparency-like resonance device insensitive to structural parameter change and the adjustable electromagnetic induction transparency-like phenomenon under the condition of unchanged super-surface structural parameters are realized.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a front view of a two-dimensional periodic unit structure of a terahertz waveband super-surface type electromagnetic induction transparent resonance device of the present invention.
FIG. 2 is a rear view of a two-dimensional periodic unit structure of a super-surface type electromagnetic induction transparent resonance device in a terahertz waveband.
Fig. 3 is a left side view of a resonance unit of the super-surface type electromagnetic induction transparent resonance device in the terahertz waveband of the present invention.
FIG. 4 is a graph of transmittance at 1120-.
FIG. 5 is a graph showing transmittance when the arm width w of the spiral medium of the embodiment of the present invention is changed within a certain range.
FIG. 6 is a graph showing transmittance when the distance g between adjacent arms of the spiral medium is changed within a certain range according to the embodiment of the present invention.
Fig. 7 is a graph showing transmittance when the thickness h of the spiral medium is changed within a certain range according to an embodiment of the present invention.
Fig. 8 is a graph of transmittance for a range of changes in spiral conductivity of photosensitive silicon in accordance with an embodiment of the present invention.
1-resonant cell, 11-dielectric slab spacer substrate, 12-first double helix structure, 121-first dielectric helix structure, 122-second dielectric helix structure, 13-second double helix structure, 131-third dielectric helix structure, 132-fourth dielectric helix structure.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
In the description of the present invention, it is to be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships illustrated in the drawings, and are used merely for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, are not to be construed as limiting the present invention. Further, in the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
Referring to fig. 1 to 3, the invention provides a terahertz waveband super-surface type electromagnetic induction transparent resonance device, which includes a plurality of groups of resonance units 1, wherein the plurality of groups of resonance units 1 are periodically arranged, each group of resonance units 1 includes a dielectric plate spacer substrate 11, a first double-spiral structure 12 and a second double-spiral structure 13, the first double-spiral structure 12 and the second double-spiral structure 13 are both fixedly connected with the dielectric plate spacer substrate 11 and are respectively located on the lateral sides of the dielectric plate spacer substrate 11, and the first double-spiral structure 12 and the second double-spiral structure 13 are symmetrically arranged with the dielectric plate spacer substrate 11 as the center;
the first double helix 12 includes a first medium helix 121 and a second medium helix 122, centers of the first medium helix 121 and the second medium helix 122 are on the same vertical line segment, the first medium helix 121 is a counterclockwise helix extending from inside to outside, the number of turns N is 2.5, and the second medium helix 122 is in a shape that the first medium helix 121 rotates 180 ° around an origin.
The second double helix structure 13 includes a third medium helix structure 131 and a fourth medium helix structure 132, centers of the third medium helix structure 131 and the fourth medium helix structure 132 are on the same vertical line segment, the third medium helix structure 131 is a counterclockwise helix extending from inside to outside, the number of turns N is 2.5, and the shape of the fourth medium helix structure 132 is that the third medium helix structure 131 rotates 180 ° around the origin.
The period p values of the resonance units 1 arranged along the x axis and the y axis are the same and smaller than the terahertz wavelength of the working waveband, and the thicknesses of the first double-helix structure 12 and the second double-helix structure 13 are the same.
The range value of the distance g between adjacent spiral arms of the first medium spiral structure 121, the second medium spiral structure 122, the third medium spiral structure 131 and the fourth medium spiral structure 132 is 16-30 μm, the range value of the arm width w of each spiral arm is 40-50 μm, the range value of the inner radius R is 0-10 μm, the range value of the outer radius R is 197-233 μm, the spiral growth rate b is determined by dividing the sum of the distance g between the adjacent spiral arms and the arm width w of each spiral arm by 2 pi, the distance between the central points of the two spirals on the same side is 400-420 μm, and the range of the spiral thickness is 130-150 μm.
The dielectric constant values of the first double-spiral structure 12 and the second double-spiral structure 13 are equal to each other and are larger than 10, the dielectric constant of the dielectric slab substrate is smaller than the dielectric constant of the first double-spiral structure 12 and the second double-spiral structure, the dielectric constant is larger than 1.5 and is smaller than or equal to 3, and the thickness of the spacer substrate is 400-500 mu m.
Referring to fig. 4 to 8, the present invention provides an embodiment of a super-surface type electromagnetic induction transparent resonance device in a terahertz waveband, which includes four dielectric photosensitive silicon spiral structures with high dielectric constants, disposed on two sides of a silicon dioxide glass spacer substrate to form a resonance device unit, wherein the unit silicon dielectric spiral includes a number 1, 2 silicon spiral and a number 3, 4 silicon spiral. The incident plane wave is perpendicularly incident on the resonant device with its electric field polarized in the x-direction and the wave vector k in the-z direction.
The super-surface type electromagnetic induction transparent resonance device with the terahertz waveband works near 1160 microns of the terahertz waveband, the material of the spacer substrate is quartz glass, and the dielectric constant is 2.1025; the spiral dielectric resonance unit is made of photosensitive silicon, the dielectric constant is 11.9, and the conductivity of the photosensitive silicon can be changed along with the change of the light intensity of the infrared pumping light source. When the conductivity of the photosensitive silicon is 0S/m, no infrared pumping light source is present. The period of the spiral dielectric silicon resonance unit along the x axis and the y axis is Px-Py-P-900 mum, less than the wavelength of the operating light wave. The width of the helix arm is 45 μm, the distance between the two arms is 21 μm, the inner radius is 5 μm, the outer radius is 215 μm, the distance between the two helix centers is 420 μm, the helix growth rate b is (w + g)/(2 pi), the height H of the helix medium is 120 μm, and the height H of the spacer medium is 500 μm. The transmittance curve at 1120-. As can be seen from fig. 4, the super-surface-like electromagnetically-induced transparent resonator generates an EIT-like phenomenon in the frequency range, the center wavelength of the transparent window is 1161.5 μm, the amplitude of the resonant peak can reach 0.983, and the resonance quality factor Q is calculated according to the formula Q ═ λ 0/Δ λ (where λ 0 is the resonant wavelength corresponding to the resonant peak, and Δ λ represents the width of the resonant frequency corresponding to the resonant peak reaching half of the maximum amplitude in the electromagnetically-induced transparent window, i.e., full width at half maximum FWHM). The figure of merit is calculated to be 4646. The value of the corresponding group index of refraction can be given by the formula ng ═ λ2(FWHM 4 h) (where ng denotes the group index, λ denotes the corresponding resonance wavelength at the resonance peak, FWHM denotes the width of the corresponding resonance wavelength at which the resonance peak in the EIT window reaches half the maximum amplitude, and h denotes the height of the helical dielectric resonant cell). The corresponding group refractive index at the resonance peak can be calculated to be 11242.
When r is 5 μm, d is 420 μm, H is 500 μm and p is 900 μm, and the electrical conductivity of the photosensitive silicon is 0S/m, different structural parameters of the super-surface resonance device are changed, and the influence of the change on the EIT-like result is studied. Firstly, other parameters of the structure are kept unchanged, only the size of the arm width w of the spiral medium is changed, and CST electromagnetic simulation calculation shows that when the parameter change range of the arm width w is between 40 and 48 mu m, because the sensitivity of the resonance wavelength of a light mode and a dark mode to the parameter change is basically consistent, namely the detuning is very small, and a good result of an EIT-like effect is always kept after destructive interference. Fig. 5 is a graph showing transmittance measured by CST electromagnetic calculation when the adjacent arm spacings w are selected to be 40, 45, and 48 μm, respectively. As can be seen from FIG. 5, as the distance w between adjacent arms increases, the EIT-like transmission resonance wavelength exhibits a red shift, but the EIT-like transparent window effect remains unchanged, and the transmittance is maintained at 94% or more.
Similarly, other parameters of the resonance unit are kept unchanged, only the size of the distance g between the adjacent arms of the spiral medium is changed, and CST electromagnetic simulation calculation shows that when the parameter change range of the distance g between the adjacent arms is 15-25 μm, because the sensitivity of the resonance wavelength of the bright mode and the sensitivity of the resonance wavelength of the dark mode to the parameter g change are basically consistent, namely the detuning is very small, and a good result of an EIT-like effect is always kept after destructive interference. Fig. 6 is a graph showing transmittance measured by CST electromagnetic calculation when the arm pitch g is 15, 20, and 25 μm, respectively. As can be seen from FIG. 6, with the linear increase of the arm width g, the EIT-like transmission resonance wavelength appears red-shifted, but the EIT-like transparent window effect remains unchanged, and the transmittance is kept above 95%.
Similarly, other parameters are unchanged, only the height h of the spiral medium is changed, and CST electromagnetic simulation calculation shows that when the parameter change range of the height h is 110-130 μm, because the sensitivity of the resonance frequency of the light mode and the resonance frequency of the dark mode to the parameter change is basically consistent, namely the detuning is very small, the good result of the EIT-like effect is always kept after destructive interference. Fig. 7 shows transmittance curves obtained by CST electromagnetic calculation when the heights h are 110, 120, and 130 μm, respectively. As can be seen from FIG. 7, with the linear increase of the height h, the EIT-like transmission resonance wavelength shows a red shift phenomenon, but the EIT-like transparent window effect remains unchanged, and the transmittance is maintained above 98%.
And finally, under the condition of keeping the structural parameters of the EIT-like device unchanged, researching the adjustability of EIT resonance, wherein when the spiral photosensitive silicon is irradiated by the infrared pumping light source, the conductivity of the spiral photosensitive silicon can be changed, and the conductivity of the spiral photosensitive silicon is increased along with the increase of the light intensity of the infrared pumping light source. CST electromagnetic simulation calculation shows that when the parameter variation range of the conductivity sigma is between 0S/m and 5S/m, due to the effect of loss absorption, the transmittance amplitude of an EIT window can be regulated and controlled, and the engineering application of a rapid optical switch can be realized. Fig. 8 is a graph showing transmittance curves obtained by CST electromagnetic calculation when the electric conductivity σ is selected to be 0, 1, 2, and 5S/m, respectively. As can be seen from fig. 8, as the electrical conductivity σ increases, the EIT-like transmission resonance wavelength remains unchanged, but the EIT-like transparent window transmittance amplitude is adjustable, with minimum and maximum transmittances of 5% and 98%, respectively.
In conclusion, the all-dielectric super-surface EIT resonance device has structural parameter robustness, namely when the structural parameters are changed in a large range, the EIT-like result is not influenced, and the light-sensitive silicon can be irradiated by the infrared pumping light source to realize dynamic adjustment of an EIT window. In addition, it is worth noting that the super-surface type electromagnetic induction transparent resonance device of the terahertz waveband can work in wavebands such as microwave and the like through the scaling theorem.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (5)
1. A super-surface type electromagnetic induction transparent resonance device with terahertz wave band is characterized in that,
the dielectric plate spacer substrate comprises a plurality of groups of resonance units, wherein the plurality of groups of resonance units are periodically arranged, each group of resonance units comprises a dielectric plate spacer substrate, a first double-spiral structure and a second double-spiral structure, the first double-spiral structure and the second double-spiral structure are fixedly connected with the dielectric plate spacer substrate and are respectively positioned on the lateral sides of the dielectric plate spacer substrate, and the first double-spiral structure and the second double-spiral structure are symmetrically arranged by taking the dielectric plate spacer substrate as the center;
the first double-helix structure comprises a first medium helix structure and a second medium helix structure, the centers of the first medium helix structure and the second medium helix structure are on the same vertical line segment, the first medium helix structure is a counterclockwise helix extending from inside to outside, the number of turns N is 2.5, and the second medium helix structure is in a shape that the first medium helix structure rotates 180 degrees around the origin.
2. The terahertz waveband super-surface type electromagnetic induction transparent resonance device as claimed in claim 1,
the second double-helix structure comprises a third medium helix structure and a fourth medium helix structure, the centers of the third medium helix structure and the fourth medium helix structure are on the same vertical line segment, the third medium helix structure is a counterclockwise helix extending from inside to outside, the number of turns N is 2.5, and the shape of the fourth medium helix structure is that the third medium helix structure rotates 180 degrees around the origin.
3. The terahertz waveband super-surface type electromagnetic induction transparent resonance device as claimed in claim 2,
the periodic p values of the resonance units arranged along the x axis and the y axis are the same and are smaller than the terahertz wavelength of the working waveband, and the thicknesses of the first double-spiral structure and the second double-spiral structure are the same.
4. The terahertz waveband super-surface type electromagnetic induction transparent resonance device as claimed in claim 3,
the range value of the distance g between adjacent spiral arms of the first medium spiral structure, the second medium spiral structure, the third medium spiral structure and the fourth medium spiral structure is 16-30 mu m, the range value of the arm width w of each spiral arm is 40-50 mu m, the range value of the inner radius R is 0-10 mu m, the range value of the outer radius R is 197-233 mu m, the spiral growth rate b is determined by dividing the sum of the distance g between the adjacent spiral arms and the arm width w of each spiral arm by 2 pi, the distance between the central points of the two spirals on the same side is 400-420 mu m, the range of the spiral thickness is 130-150 mu m, and the thickness of the spacer substrate is 400-500 mu m.
5. The terahertz waveband super-surface type electromagnetic induction transparent resonance device as claimed in claim 4,
the dielectric constant values of the first double-spiral structure and the second double-spiral structure are equal to each other and are larger than 10, the dielectric constant of the dielectric slab substrate is smaller than the dielectric constant of the first double-spiral structure and the second double-spiral structure, and the dielectric constant is larger than 1.5 and is smaller than or equal to 3.
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| US20100245820A1 (en) * | 2009-03-24 | 2010-09-30 | Schubert Mathias M | Mass Sensor |
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| CN215008587U (en) * | 2021-03-05 | 2021-12-03 | 桂林电子科技大学 | Super-surface type electromagnetic induction transparent resonance device of terahertz waveband |
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| US20100245820A1 (en) * | 2009-03-24 | 2010-09-30 | Schubert Mathias M | Mass Sensor |
| CN109059971A (en) * | 2018-09-25 | 2018-12-21 | 桂林电子科技大学 | A kind of sensor of three hole crack structure |
| CN110836862A (en) * | 2019-11-18 | 2020-02-25 | 南开大学 | Terahertz chiral super-surface polarization sensor and sensing method thereof |
| CN215008587U (en) * | 2021-03-05 | 2021-12-03 | 桂林电子科技大学 | Super-surface type electromagnetic induction transparent resonance device of terahertz waveband |
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| CN113948875A (en) * | 2021-10-19 | 2022-01-18 | 大连理工大学 | Fractal structure electromagnetic wave-absorbing metamaterial and preparation method thereof |
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