CN113359399A - Exposure method and exposure system - Google Patents
Exposure method and exposure system Download PDFInfo
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- CN113359399A CN113359399A CN202010147972.9A CN202010147972A CN113359399A CN 113359399 A CN113359399 A CN 113359399A CN 202010147972 A CN202010147972 A CN 202010147972A CN 113359399 A CN113359399 A CN 113359399A
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- alignment
- exposure
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7007—Alignment other than original with workpiece
- G03F9/7015—Reference, i.e. alignment of original or workpiece with respect to a reference not on the original or workpiece
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention provides an exposure method and an exposure system, before a substrate enters exposure equipment for exposure, measurement of each chip on the substrate is completed through the measurement equipment, and the exposure equipment only needs to execute an exposure process, so that the time of the substrate in the exposure equipment can be shortened, and the overall efficiency is improved; in addition, the measuring equipment and the exposure equipment adopt the same substrate alignment mark to carry out substrate alignment, and carry out the conversion of the relation between the alignment mark coordinate system of each chip and the coordinate system of the equipment according to the same substrate alignment mark coordinate system, so the exposure data for carrying out exposure on each chip is not influenced by the inconsistency of the coordinate systems of the measuring equipment and the exposure equipment, and the exposure precision can be improved.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing technologies, and in particular, to an exposure method and an exposure system.
Background
An exposure apparatus is an apparatus for exposing a pattern required by a user onto a chip, and is a key apparatus in the field of integrated circuit manufacturing. In the manufacture of integrated circuits, multiple layers of patterns are often exposed on the same chip. In order to enable an integrated circuit to exhibit desired circuit characteristics, it is necessary to ensure overlay accuracy of each layer pattern. The usual approach is to add alignment marks on the chip, measure the positions of the alignment marks on the table coordinate system, and based on this position information, calculate the correct exposure positions in order to accurately expose the desired pattern on the target position of the chip.
When the exposure device exposes the chip, generally, a plurality of chips on the substrate are measured step by step, and then compensation correction exposure step by step is performed, because the number of chips on the substrate is large (generally, tens of thousands), both the chip alignment mark measurement and the chip compensation correction exposure require a large amount of time, resulting in a low yield.
In a production line, after a chip is exposed by an exposure device, a measurement device is generally used to randomly and randomly inspect an output product of the exposure device, the measurement device uploads measurement result data to a monitoring system, the monitoring system manages all batches of data uniformly, abnormal data is adjusted and compensated for parameters of the exposure device after being analyzed artificially, and due to the fact that coordinate systems of the measurement device and the exposure device are not consistent, when exposure data of the exposure device is adjusted based on the measurement data of the measurement device, exposure accuracy is affected.
Disclosure of Invention
The invention aims to provide an exposure method and an exposure system, which are used for improving the exposure efficiency and the exposure precision.
In order to solve the above technical problem, the present invention provides an exposure method for exposing a plurality of chips on a substrate, the exposure method comprising:
before the substrate enters the exposure equipment, a first alignment measurement system of a measurement equipment is used for carrying out alignment measurement on the alignment mark of the substrate so as to establish a first relation between the alignment mark coordinate system of the substrate and the coordinate system of the first alignment measurement system; measuring the alignment mark of each chip by using the first alignment measurement system to establish a second relation between the alignment mark coordinate system of each chip and the coordinate system of the first alignment measurement system, and further obtaining a third relation between the coordinate system of each chip and the alignment mark coordinate system of the substrate according to the first relation and the second relation;
after a substrate enters the exposure equipment, a second alignment measurement system of the exposure equipment is used for carrying out alignment measurement on alignment marks of the substrate so as to establish a fourth relation between an alignment mark coordinate system of the substrate and a coordinate system of the second alignment measurement system, the position of each chip in the coordinate system of the second alignment measurement system is obtained according to the fourth relation and the third relation, and then the corresponding chip is exposed according to the position of each chip in the coordinate system of the second alignment measurement system.
The first alignment measurement system and the second alignment measurement system measure the same alignment mark when measuring the alignment mark of the substrate.
Optionally, in the exposure method, the exposure method further includes: correcting an error between the first and second alignment measurement systems using an alignment reference mark.
Optionally, in the exposure method, the substrate has at least two alignment marks distributed dispersedly, and when the first alignment measurement system and the second alignment measurement system are used to measure the alignment marks of the substrate, at least two identical alignment marks of the substrate are measured.
Optionally, in the exposure method, the substrate has four alignment marks, and the four alignment marks of the substrate are respectively located at four top corners of the substrate or on four scattered chips.
Optionally, in the exposure method, each of the chips has at least two alignment marks distributed dispersedly, and when the first alignment measurement system is used to measure the alignment mark of each of the chips, the at least two alignment marks of each of the chips are measured.
Optionally, in the exposure method, the exposing the corresponding chip according to the position of each chip in the coordinate system of the second alignment measurement system includes the following steps:
calculating exposure data of each chip according to the position of each chip in the coordinate system of the second alignment measurement system;
and exposing the corresponding chip according to the exposure data of each chip.
The present invention also provides an exposure system for exposing a plurality of chips on a substrate, the exposure system comprising: the system comprises a measuring device, a computing server and an exposure device, wherein the measuring device comprises a first alignment measurement system, and the exposure device comprises a second alignment measurement system; wherein the content of the first and second substances,
the measuring equipment is used for carrying out alignment measurement on the alignment mark of the substrate by using the first alignment measurement system before the substrate enters the exposure equipment so as to establish a first relation between an alignment mark coordinate system of the substrate and a coordinate system of the first alignment measurement system, and measuring the alignment mark of each chip by using the first alignment measurement system so as to establish a second relation between the alignment mark coordinate system of each chip and the coordinate system of the first alignment measurement system;
the calculation server is used for obtaining a third relation between the coordinate system of each chip and the alignment mark coordinate system of the substrate according to the first relation and the second relation;
the exposure equipment is used for carrying out alignment measurement on the alignment mark of the substrate by using the second alignment measurement system after the substrate enters so as to establish a fourth relation between the alignment mark coordinate system of the substrate and the coordinate system of the second alignment measurement system, and obtaining the position of each chip in the coordinate system of the second alignment measurement system according to the fourth relation and the third relation, and further exposing the corresponding chip according to the position of each chip in the coordinate system of the second alignment measurement system;
wherein the alignment marks of the substrate measured by the first alignment measurement system and the second alignment measurement system are the same.
Optionally, in the exposure system, the measuring device is a long and short dimension measuring device.
Optionally, in the exposure system, the measurement device, the calculation server, and the exposure device transmit data in real time through a data transmission channel and a data transmission protocol.
Optionally, in the exposure system, the exposure apparatus further includes an exposure model calculation module, where the exposure model calculation module is configured to calculate exposure data of each chip according to a position of each chip in a coordinate system of the second alignment measurement system, so as to expose the corresponding chip.
The exposure method and the exposure system provided by the invention comprise the following steps: before the substrate enters the exposure equipment, carrying out alignment measurement on the alignment mark of the substrate by using a first alignment measurement system so as to establish a first relation between the alignment mark coordinate system of the substrate and the coordinate system of the first alignment measurement system; measuring the alignment mark of each chip by using the first alignment measurement system to establish a second relation between the alignment mark coordinate system of each chip and the coordinate system of the first alignment measurement system, and further obtaining a third relation between the coordinate system of each chip and the alignment mark coordinate system of the substrate according to the first relation and the second relation; after a substrate enters an exposure device, a second alignment measurement system of the exposure device is used for performing alignment measurement on alignment marks of the substrate so as to establish a fourth relation between an alignment mark coordinate system of the substrate and a coordinate system of the second alignment measurement system, the position of each chip in the coordinate system of the second alignment measurement system is obtained according to the fourth relation and the third relation, and then the corresponding chip is exposed according to the position of each chip in the coordinate system of the second alignment measurement system. That is, compared with the prior art, the exposure apparatus does not need to measure the alignment mark of each chip of the substrate, and before the substrate enters the exposure machine, the measurement of the alignment mark of each chip is completed by the measuring apparatus in advance, so that the overall efficiency can be improved by shortening the time of the substrate in the exposure apparatus and simultaneously processing a plurality of substrates, and in addition, because the measuring apparatus and the exposure apparatus use the same substrate alignment mark to perform substrate alignment and perform conversion of the relationship between the alignment mark coordinate system of each chip and the coordinate system of the apparatus according to the same substrate alignment mark coordinate system, the exposure data for exposing each chip is not affected by the inconsistency of the coordinate systems of the measuring apparatus and the exposure apparatus, so that the exposure accuracy can be improved.
Drawings
FIG. 1 is a block diagram of an exposure system according to an embodiment of the present invention;
FIG. 2 is a schematic flow chart illustrating an exposure method according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of alignment marks of a substrate and a chip according to an embodiment of the present invention;
wherein the reference numerals are as follows:
11-a measuring device; 12-a computing server; 13-an exposure device; 111-a first alignment measurement system; 121-a data analysis module; 131-a second alignment measurement system; 132-an exposure model calculation module; 100-alignment marks of the substrate; 200-alignment marks of the chip.
Detailed Description
The exposure method and the exposure system according to the present invention will be described in detail with reference to the accompanying drawings and specific embodiments. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention. Further, the structures illustrated in the drawings are often part of actual structures. In particular, the drawings may have different emphasis points and may sometimes be scaled differently.
First, referring to fig. 1, the present invention provides an exposure system, which is used for exposing a plurality of chips on a substrate, where the substrate may be a glass plate, a metal plate, or silicon, sapphire, a mask plate, etc.; the exposure system includes: a metrology device 11, a computing server 12 and an exposure device 13, said metrology device 11 comprising a first alignment measurement system 111, said exposure device 13 comprising a second alignment measurement system 131, wherein,
the metrology equipment 11 is configured to perform alignment measurement on the alignment mark of the substrate by using the first alignment measurement system 111 before the substrate enters the exposure equipment 13 to establish a first relationship between the alignment mark coordinate system of the substrate and the coordinate system of the first alignment measurement system 111, and to perform measurement on the alignment mark of each of the chips by using the first alignment measurement system 111 to establish a second relationship between the alignment mark coordinate system of each of the chips and the coordinate system of the first alignment measurement system 111;
the calculation server 12 is configured to obtain a third relationship between the coordinate system of each chip and the alignment mark coordinate system of the substrate according to the first relationship and the second relationship;
the exposure device 13 is configured to perform alignment measurement on the alignment mark of the substrate by using the second alignment measurement system 131 after the substrate enters, so as to establish a fourth relationship between the alignment mark coordinate system of the substrate and the coordinate system of the second alignment measurement system 131, obtain the position of each chip in the coordinate system of the second alignment measurement system 131 according to the fourth relationship and the third relationship, and then expose the corresponding chip according to the position of each chip in the coordinate system of the second alignment measurement system 131.
With continuing reference to fig. 1, the exposure apparatus 13 further includes an exposure model calculation module 132, where the exposure model calculation module 132 is configured to calculate exposure data of each chip according to a position of each chip in the coordinate system of the second alignment measurement system 131, so as to expose the corresponding chip; the calculation server 12 may include a data analysis module 121, and the data analysis module 121 may specifically obtain the third relationship by a translation, a rotation, a reduction, and the like.
In this embodiment, the measuring device 11 may be a long and short dimension measuring device, but it should be understood that in fact, other measuring devices known to those skilled in the art may be used as the measuring device 11, and it is only necessary to ensure that the selected measuring device has an alignment measuring system having a mark measuring function.
In addition, the metrology equipment 11, the computing server 12, and the exposure equipment 13 may transmit data in real time through a data transmission channel and a data transmission protocol.
Next, referring to fig. 2, based on the exposure system provided in the embodiment of the present invention, the embodiment of the present invention further provides an exposure method, where the exposure method includes the following steps:
s11, performing alignment measurement on the alignment mark of the substrate by using a first alignment measurement system 111 of a metrology tool 11 to establish a first relationship between the alignment mark coordinate system of the substrate and the coordinate system of the first alignment measurement system 111;
s12, measuring the alignment mark of each of the chips by the first alignment measurement system 111 to establish a second relationship between the alignment mark coordinate system of each of the chips and the coordinate system of the first alignment measurement system 111;
s13, obtaining a third relation between the coordinate system of each chip and the alignment mark coordinate system of the substrate according to the first relation and the second relation;
s14, performing alignment measurement on the alignment mark of the substrate by using the second alignment measurement system 131 of the exposure apparatus 13 to establish a fourth relationship between the alignment mark coordinate system of the substrate and the coordinate system of the second alignment measurement system 131;
s15, obtaining the position of each chip in the coordinate system of the second alignment measurement system 131 according to the fourth relationship and the third relationship;
s16, exposing the corresponding chip according to the position of each chip in the coordinate system of the second alignment measurement system 131.
Wherein steps S11 to S13 are performed before the substrate enters the exposure apparatus 13, and steps S14 to S16 are performed within the exposure apparatus 13 after the substrate enters the exposure apparatus 13; in particular, steps S11-S12 are performed within the metrology tool 11, and step S13 may be performed by the computing server 12.
The step S16 may specifically include the following steps: calculating exposure data for each of the chips based on the position of each of the chips in the coordinate system of the second alignment measurement system 131; and exposing the corresponding chip according to the exposure data of each chip.
Further, before the measurement and exposure of the chip on the substrate, the exposure method may further include the steps of: an error between the first alignment measurement system 111 and the second alignment measurement system 131 is corrected by using an alignment mark, so that an error of establishing a coordinate system of the measurement device 11 and the exposure device 13 can be reduced, and the exposure accuracy can be improved.
In the prior art, the exposure equipment needs to measure the alignment marks of the chips and perform compensation correction exposure of the chips, and the time consumption is long, but the exposure system and the exposure method provided by the invention firstly measure the alignment marks of the chips through the measurement equipment 11, and then perform the exposure process through the exposure equipment 13, namely, before the substrate enters the exposure equipment 13 for exposure, the measurement of each chip on the substrate is completed through the measurement equipment 11, and the measurement result is shared with the exposure equipment 13, so that the exposure equipment 13 only needs to execute the exposure process, and then the measurement equipment 11 can measure the subsequent substrate while the exposure equipment 13 performs the exposure process, thereby shortening the time of the substrate in the exposure equipment and improving the overall efficiency.
In addition, in the exposure apparatus 13 and the exposure method provided in the embodiment of the present invention, the alignment marks of the substrates measured by the first alignment measurement system 111 and the second alignment measurement system 131 are the same, that is, the measurement apparatus 11 and the exposure apparatus 13 use the same substrate alignment mark to perform substrate alignment, and the relationship between the alignment mark coordinate system of each chip and the coordinate system of the apparatus (including the measurement apparatus 11 and the exposure apparatus 13) is converted according to the same substrate alignment mark coordinate system, so that the exposure data for exposing each chip is not affected by the inconsistency of the coordinate systems of the measurement apparatus 11 and the exposure apparatus 13, and therefore, the exposure accuracy can be improved.
In this embodiment, it is preferable that the substrate has at least two alignment marks distributed dispersedly, and when the alignment marks are distributed as dispersedly as possible, alignment errors can be reduced, and when the alignment marks of the substrate are measured by the first alignment measurement system 111 and the second alignment measurement system 131, at least two identical alignment marks of the substrate are measured, and the alignment marks coordinate system of the substrate is constituted by the measured alignment marks. It is further preferable that the substrate has four alignment marks 100, the four alignment marks 100 of the substrate are respectively located on four corners of the substrate (see fig. 3), or located on four scattered chips (not shown), and preferably, the four scattered chips are closer to the four corners of the substrate than the other chips.
Similarly, in this embodiment, each of the chips preferably has at least two alignment marks 200 distributed dispersedly, when the first alignment measurement system 111 is used to measure the alignment mark 200 of each of the chips, at least two alignment marks 200 of each of the chips are measured, and the measured alignment marks 200 form an alignment mark coordinate system of the chip. Fig. 3 illustrates a preferred embodiment, i.e. 4 alignment marks 200 per chip, but it should be understood that the specific number of alignment marks of the substrate and the specific number of chips should not be construed as a limitation of the present application.
In summary, the exposure method and the exposure system provided by the invention improve the exposure efficiency and the exposure precision.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (10)
1. An exposure method for exposing a plurality of chips on a substrate, the exposure method comprising:
before the substrate enters the exposure equipment, a first alignment measurement system of a measurement equipment is used for carrying out alignment measurement on the alignment mark of the substrate so as to establish a first relation between the alignment mark coordinate system of the substrate and the coordinate system of the first alignment measurement system; measuring the alignment mark of each chip by using the first alignment measurement system to establish a second relation between the alignment mark coordinate system of each chip and the coordinate system of the first alignment measurement system, and further obtaining a third relation between the coordinate system of each chip and the alignment mark coordinate system of the substrate according to the first relation and the second relation;
after a substrate enters the exposure equipment, a second alignment measurement system of the exposure equipment is used for carrying out alignment measurement on alignment marks of the substrate so as to establish a fourth relation between an alignment mark coordinate system of the substrate and a coordinate system of the second alignment measurement system, the position of each chip in the coordinate system of the second alignment measurement system is obtained according to the fourth relation and the third relation, and then the corresponding chip is exposed according to the position of each chip in the coordinate system of the second alignment measurement system.
The first alignment measurement system and the second alignment measurement system measure the same alignment mark when measuring the alignment mark of the substrate.
2. The exposure method according to claim 1, further comprising: correcting an error between the first and second alignment measurement systems using an alignment reference mark.
3. The exposure method according to claim 1, wherein the substrate has at least two alignment marks distributed dispersedly, and when the alignment marks of the substrate are measured by the first alignment measurement system and the second alignment measurement system, at least two identical alignment marks of the substrate are measured.
4. The exposure method according to claim 3, wherein the substrate has four alignment marks, and the four alignment marks of the substrate are located at four corners of the substrate, respectively, or on four scattered chips.
5. The exposure method according to claim 1, wherein each of the chips has at least two alignment marks distributed dispersedly, and the at least two alignment marks of each of the chips are measured while the alignment marks of each of the chips are measured by the first alignment measurement system.
6. The exposure method according to claim 1, wherein said exposing the corresponding chip based on the position of each of the chips in the coordinate system of the second alignment measurement system comprises the steps of:
calculating exposure data of each chip according to the position of each chip in the coordinate system of the second alignment measurement system;
and exposing the corresponding chip according to the exposure data of each chip.
7. An exposure system for exposing a plurality of chips on a substrate, the exposure system comprising: the system comprises a measuring device, a computing server and an exposure device, wherein the measuring device comprises a first alignment measurement system, and the exposure device comprises a second alignment measurement system; wherein the content of the first and second substances,
the measuring equipment is used for carrying out alignment measurement on the alignment mark of the substrate by using the first alignment measurement system before the substrate enters the exposure equipment so as to establish a first relation between an alignment mark coordinate system of the substrate and a coordinate system of the first alignment measurement system, and measuring the alignment mark of each chip by using the first alignment measurement system so as to establish a second relation between the alignment mark coordinate system of each chip and the coordinate system of the first alignment measurement system;
the calculation server is used for obtaining a third relation between the coordinate system of each chip and the alignment mark coordinate system of the substrate according to the first relation and the second relation;
the exposure equipment is used for carrying out alignment measurement on the alignment mark of the substrate by using the second alignment measurement system after the substrate enters so as to establish a fourth relation between the alignment mark coordinate system of the substrate and the coordinate system of the second alignment measurement system, and obtaining the position of each chip in the coordinate system of the second alignment measurement system according to the fourth relation and the third relation, and further exposing the corresponding chip according to the position of each chip in the coordinate system of the second alignment measurement system;
wherein the alignment marks of the substrate measured by the first alignment measurement system and the second alignment measurement system are the same.
8. The exposure system of claim 7, wherein the measurement device is a long and short dimension measurement device.
9. The exposure system according to claim 7 or 8, wherein data is transmitted in real time between the metrology device, the computing server and the exposure device via a data transmission channel and a data transmission protocol.
10. The exposure system according to claim 7, wherein the exposure apparatus further comprises an exposure model calculation module for calculating exposure data of each of the chips based on a position of the each of the chips in the coordinate system of the second alignment measurement system for exposing the corresponding chip.
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| CN108008608A (en) * | 2016-10-31 | 2018-05-08 | 上海微电子装备（集团）股份有限公司 | A kind of method of back side alignment |
| WO2019206579A1 (en) * | 2018-04-26 | 2019-10-31 | Asml Netherlands B.V. | Alignment method and apparatus |
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2020
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| JPH06120312A (en) * | 1992-10-08 | 1994-04-28 | Nikon Corp | Alignment method |
| JPH1027738A (en) * | 1996-07-09 | 1998-01-27 | Canon Inc | Scanning exposure method and manufacture of device thereby |
| US20010055117A1 (en) * | 2000-03-14 | 2001-12-27 | Nikon Corporation | Alignment method, exposure method, exposure apparatus and device manufacturing method |
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