CN113358557B

CN113358557B - Thrust measuring method and device

Info

Publication number: CN113358557B
Application number: CN202110569827.4A
Authority: CN
Inventors: 陈依籍
Original assignee: Shenzhen Absen Optoelectronic Co Ltd
Current assignee: Shenzhen Absen Optoelectronic Co Ltd
Priority date: 2021-05-24
Filing date: 2021-05-24
Publication date: 2023-04-28
Anticipated expiration: 2041-05-24
Also published as: CN113358557A

Abstract

The application discloses a thrust measurement method and a device, wherein the thrust measurement method comprises the steps of obtaining identification points on a target to be measured, and forming a coordinate system based on the identification points; acquiring coordinates of a wafer on the target to be measured in the coordinate system; and controlling a thrust probe to perform thrust measurement on the wafer based on the coordinates of the wafer. By establishing the coordinate system and identifying the coordinates of the chip in the coordinate system, the automatic alignment can be realized, the alignment accuracy is higher, and the measurement efficiency is greatly improved.

Description

Thrust measuring method and device

Technical Field

The application relates to the technical field of measuring equipment, in particular to a thrust measuring method and a thrust measuring device.

Background

The light emitting diode (light emitting diode, LED) display screen has advantages of wide color gamut, high brightness, large visual angle, low power consumption, long life span, and the like, so that the LED display screen is widely used in the display field. Such as more common stock exchange and financial information display, airport flight dynamic information display, port and station passenger guiding information display, stadium information display, road traffic information display, power dispatching and vehicle dynamic tracking and other dispatching command center information display, market shopping center and other service field business propaganda information display, advertisement media products and the like.

No matter which field the LED display screen is applied to, the pursuit of image definition and the higher and higher requirements on resolution are great development trend. The higher resolution means that the required LED pixel cells need to have smaller sizes and pitches. While conventional LED lamps are typically sized 1000 microns long, 1000 microns wide and 1000 microns thick, mini LED lamps are typically sized 200 microns long, 100 microns wide and 80 microns thick. Compared with the traditional LED lamp, the mini LED lamp with higher resolution has the advantages that the area is reduced by 50 times, the volume is reduced by 625 times, and the mini LED lamp enters a micron-sized product.

Under the general condition, the LED display screen is formed by splicing a plurality of display boxes, and each display box generally comprises a plurality of display modules, and each display module comprises a rear shell, a lamp panel and a cover plate. The lamp panel comprises a circuit board, and an LED lamp bead, an LED chip or an LED wafer which are fixed on the circuit board. LED lamp beads, LED chips or LED wafers are generally adhered to a circuit board by adhesive. Whether the LED lamp is a traditional large-size large-spacing LED lamp or a mini LED lamp with small-size small-spacing, the strength of the LED lamp beads, or the LED chips or the LED wafers adhered to the circuit board is an important standard for constant product quality.

Traditional LED display screen adopts traditional thrust meter to measure the thrust of LED lamp pearl, LED chip or LED wafer to adhesive strength. However, the conventional thrust meter automatically performs the thrust test by manual alignment, and because the conventional LED has a housing package, the conventional LED has a large volume, a large contact area, and low manual alignment and thrust requirements. However, if the thrust of the mini LED needs to be measured, the accuracy is very low and the measurement efficiency is very low by adopting the conventional thrust meter.

Disclosure of Invention

The purpose of the application is to provide a thrust measuring method and device, which realize automatic alignment, improve alignment accuracy and improve measuring efficiency.

A first aspect of the present application provides a thrust measurement method, including: acquiring an identification point on a target to be detected, and forming a coordinate system based on the identification point; acquiring coordinates of a wafer on the target to be measured in the coordinate system; and controlling a thrust probe to perform thrust measurement on the wafer based on the coordinates of the wafer.

In some embodiments, coordinates of a wafer on the target under test in the coordinate system are obtained; based on the coordinates of the wafer, controlling a thrust probe to perform thrust measurement on the wafer specifically includes: acquiring coordinates of a set number of wafers on the target to be measured in the coordinate system to acquire coordinates of the set number of wafers; and controlling the thrust probe to perform thrust measurement on the set number of wafers based on the coordinates of the set number of wafers corresponding to the set number of wafers.

In some embodiments, after controlling the thrust probe to perform thrust measurement on the set number of wafers based on coordinates of the set number of wafers corresponding to the set number of wafers, the method further includes: obtaining thrust values of a set number of wafers; and forming a thrust value distribution curve by utilizing the thrust values of the wafers with the set number and the coordinates of the wafers with the set number in one-to-one correspondence, and performing thrust analysis by utilizing the thrust value distribution curve.

In some embodiments, after the thrust probe is controlled to make a thrust measurement on the wafer, further comprising: the adsorption equipment is controlled to clean the wafer after the thrust measurement.

In some embodiments, controlling the thrust probe to make a thrust measurement on the wafer based on the coordinates of the wafer, specifically includes: controlling a thrust probe to move to correspond to the wafer based on the coordinates of the wafer; controlling a distance measuring device to measure the height of the wafer corresponding to the thrust probe; controlling the contact area of the wafer and the thrust probe to be in a set range based on the height of the wafer; and controlling the thrust probe to perform thrust measurement on the wafer under the condition that the contact area of the wafer and the thrust probe is in a set range.

In some embodiments, before acquiring the identification point on the target to be measured, the method further includes: controlling the transportation device to move the target to be detected to a target position; and under the condition that the target to be measured moves to the target position, controlling the fixing device to fix the target to be measured.

A second aspect of the present application provides a thrust measuring device, comprising: the device comprises a movable objective table, an image acquisition device, a movable platform, a thrust probe and a control system; the movable object stage is used for placing an object to be measured; the thrust probe is arranged on the mobile platform; the control system is used for: controlling the moving object stage to move so that the moving object stage drives the object to be detected to be positioned below a camera of the image acquisition equipment; after the object to be detected is positioned below a camera of the image acquisition equipment, controlling the image acquisition equipment to acquire an image of the object to be detected; after receiving the image from the image acquisition equipment, acquiring an identification point on the target to be detected based on the image, and forming a coordinate system based on the identification point; acquiring coordinates of a wafer on the target to be detected in the coordinate system based on the image; based on the coordinates of the wafer, controlling the moving platform to drive the thrust probe to move to a corresponding position, or controlling the moving object stage to drive the target to be detected to move to a corresponding position; the thrust probe is then controlled to make thrust measurements on the wafer.

In some embodiments, an adsorption device is also included; the adsorption equipment comprises a vacuum pump, a hose and an adsorption hole arranged on the thrust probe; the vacuum pump is connected with the adsorption hole through the hose; the control system is further configured to: and controlling the adsorption equipment to remove the wafer after the thrust measurement.

In some embodiments, the device further comprises a transportation device and a fixing device, wherein the fixing device is arranged on the mobile platform; the control system is further configured to: controlling the transportation device to move the target to be detected to a target position; and under the condition that the target to be measured moves to the target position, controlling the fixing device to fix the target to be measured.

In some embodiments, further comprising a ranging device connected to the thrust probe; the control system is used for controlling the thrust probe to measure the thrust of the wafer based on the coordinates of the wafer, and specifically comprises the following steps: controlling a thrust probe to move to correspond to the wafer based on the coordinates of the wafer; controlling a distance measuring device to measure the height of the wafer corresponding to the thrust probe; controlling the contact area of the wafer and the thrust probe to be in a set range based on the height of the wafer; and controlling the thrust probe to perform thrust measurement on the wafer under the condition that the contact area of the wafer and the thrust probe is in a set range.

In the method, the coordinate system is established, and the coordinates of the wafer in the coordinate system are identified, so that automatic alignment can be realized, the alignment accuracy is high, and the measurement efficiency is greatly improved.

Drawings

In order to more clearly illustrate the technical solutions of the present application, the drawings that are required to be used in the embodiments will be briefly described below.

FIG. 1 is a schematic diagram of the structure of a target to be measured in the present application;

fig. 2 is a schematic structural diagram of a thrust measuring device according to an embodiment of the present application;

FIG. 3 is a flow chart of a thrust measurement method provided by an embodiment of the present application;

fig. 4 is a schematic structural view of a thrust measuring device according to an embodiment of the present application;

fig. 5 is a schematic structural diagram of a control system according to an embodiment of the present application.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application.

Referring to fig. 1 and 2, fig. 1 is a schematic structural diagram of a target to be measured in the present application; fig. 2 is a schematic structural diagram of a thrust measuring device according to an embodiment of the present application. An embodiment of the present application provides a thrust measuring device, including: a moving stage 50, an image acquisition device 20, a moving platform 30, a thrust probe 40, and a control system 10; the moving object stage 50 is used for placing an object to be measured; the thrust probe 40 is disposed on the moving platform 30. Wherein the mobile stage 50 and the mobile platform 30 are each coupled to the control system 10 by a motor such that the control system 10 can control the movement of the mobile stage 50 and the mobile platform 30 by controlling the motor. The image acquisition device 20 and the thrust probe 40 are electrically connected to the control system 10, respectively, so that the control system 10 can acquire images taken by the image acquisition device 20 and can send working instructions to the thrust probe 40.

Specifically, the image pickup device 20 may be a camera or a video camera or the like. Wherein the image acquisition device 20 and the mobile platform 30 are disposed above the mobile stage 50, and the camera of the image acquisition device 20 faces the mobile stage 50. The thrust probe 40 is provided on the moving platform 30, and the thrust probe 40 faces the moving stage 50.

The entire thrust measuring device 100 is assumed to have an X direction in the longitudinal direction, a Y direction in the width direction, and a Z direction in the height direction. Then the movable stage 50 can be moved in the X-direction and the Y-direction and the movable stage 30 can be moved in the X-direction, the Y-direction, and the Z-direction.

The moving object stage 50 can be connected with the rotating shaft of the motor through a precise lead screw, the control system 10 is electrically connected with the motor, and the motor controls the precise lead screw to rotate, so that the moving object stage 50 is driven to move. Therefore, the moving object table 50 can be controlled to drive the targets to be measured with different types to move slightly, so that the targets to be measured with different types can be precisely moved to the position right below the camera of the image acquisition device 20.

The control system 10 may be an electronic device that may be a notebook, a desktop, a tablet, or the like, in which an application program may be installed. And then the corresponding application program is installed on the equipment, and when the equipment is used, the application program is opened, and other equipment can be controlled to perform corresponding operations automatically or manually.

Wherein, specifically, the control system 10 is configured to perform the following operations:

s11: the moving stage 50 is controlled to move, so that the moving stage 50 drives the object to be measured to be located below the camera of the image acquisition device 20. Specifically, the moving stage 50 may be controlled to perform micro-movement along the X-direction and/or the Y-direction to correct the position of the object to be measured, so that the object to be measured is located directly under the camera, so as to ensure that the captured image may include all the objects to be measured, and prevent a portion of the edge of the object to be measured from being not captured into the image.

S12: after the object to be measured is located below the camera of the image acquisition device 20, the image acquisition device 20 is controlled to acquire an image of the object to be measured.

S13: after receiving the image from the image acquisition device 20, the identification point 1 on the object to be measured is acquired based on the image, and a coordinate system is formed based on the identification point 1. Specifically, the target to be measured is preset with the identification point 1, taking the target to be measured as a rectangular plate as an example, and because three points can form a surface, one identification point 1 can be respectively arranged at three corner positions of the rectangular plate. Then the captured image will also contain three identification points 1 and the control system 10 can identify the three identification points 1 and then use the three identification points 1 to generate a coordinate system.

S14: and acquiring the coordinates of the wafer on the target to be detected in the coordinate system based on the image. The wafer may specifically be an LED chip. Those skilled in the art will appreciate that there will typically be tens of thousands of wafers on the target to be tested, taking for convenience of description the coordinates of the wafer in one pixel cell of the first column on the target to be tested as an example.

In detail, each pixel unit includes one RED (RED) LED chip, one GREEN (GREEN) LED chip, and one BLUE (BLUE) LED chip, i.e., three wafers. Then, referring to fig. 1, the coordinates of each wafer identified can be as follows: the first row and column of wafers 11 have 1-1-R coordinates, the second row and column of wafers 12 have 1-1-G coordinates, and the third row and column of wafers 13 have 1-1-B coordinates.

S15: based on the coordinates of the wafer, the moving platform 30 is controlled to drive the thrust probe 40 to move to a corresponding position, or the moving stage 50 is controlled to drive the target to be measured to move to a corresponding position; the thrust probe 40 is then controlled to perform a thrust measurement on the wafer.

Taking a wafer as a cuboid, the lower surface of the wafer is a surface fixed with a carrier such as a circuit board, the upper surface is opposite to the lower surface, and the side walls are the other four wall surfaces between the upper surface and the lower surface. During the thrust measurement, the thrust probe 40 is brought into contact with the side wall and applies a force to the side wall to peel the wafer off the carrier such as a circuit board, thereby obtaining a thrust value.

For example, when a thrust measurement is required for the first wafer in the first row and the first column, the moving platform 30 is controlled to move above the first wafer in the first row and the first column along the X direction and/or the Y direction, that is, the thrust probe 40 is driven to move to the coordinates 1-1-R. Then, the moving platform 30 is controlled to move downwards along the Z direction until the thrust probe 40 contacts with the side wall of the wafer, and then the moving platform 30 moves to drive the thrust probe 40 to push the wafer until the wafer falls. At this time, the thrust probe 40 will feed back the thrust value to the control system 10, and the control system 10 can obtain the thrust value of the wafer with coordinates of 1-1-R.

Then, when the thrust value of the wafer in the first row and the first column needs to be detected, the moving platform 30 is controlled to move along the X direction until the thrust probe 40 contacts the wafer in the first row and the first column, and then the moving platform 30 is controlled to move along the X direction until the thrust probe 40 pushes the wafer in the first row and the first column away. At this point, the thrust probe 40 will feed back the thrust value to the control system 10, and the control system 10 can obtain the thrust value of the wafer with coordinates of 1-1-G.

Of course, in other embodiments, the moving stage 50 may be controlled to move the object to be measured, so that the wafer in the first row and the first column is located under the thrust probe 40.

Of course, it can be understood that the moving platform 30 may be controlled to drive the thrust probe 40 to move to the origin of the coordinate system for alignment, and then the moving platform 30 may be controlled to drive the thrust probe 40 to move to the position for performing the thrust measurement on each wafer.

According to the thrust measuring device 100 provided by the embodiment of the application, the object to be measured is automatically moved by the moving object table 50, so that the image acquisition equipment 20 can acquire pictures; then identifying the identification point 1 in the image to establish a coordinate system; then, the coordinates of the wafer are identified based on the coordinate system, and then the thrust probe 40 is moved to a corresponding position according to the coordinates, so that the thrust measurement is performed on the wafer. From the above, the wafer can be automatically aligned by establishing the coordinate system and identifying the coordinates of the wafer in the coordinate system, the alignment accuracy is high, and the measurement efficiency is greatly improved.

In some embodiments, the thrust detection device includes: a moving stage 50, an image acquisition device 20, a moving platform 30, a thrust probe 40, and a control system 10; the moving object stage 50 is used for placing an object to be measured; the thrust probe 40 is disposed on the moving platform 30. In addition, the thrust measuring device 100 includes an adsorption apparatus; the adsorption equipment comprises a vacuum pump, a hose and an adsorption hole arranged on the thrust probe 40; the vacuum pump is connected with the adsorption hole through the hose.

In this embodiment, the control system 10 is configured to perform the following operations:

s21: the moving stage 50 is controlled to move, so that the moving stage 50 drives the object to be measured to be located below the camera of the image acquisition device 20.

S22: after the object to be measured is located below the camera of the image acquisition device 20, the image acquisition device 20 is controlled to acquire an image of the object to be measured.

S23: after receiving the image from the image acquisition device 20, the identification point 1 on the object to be measured is acquired based on the image, and a coordinate system is formed based on the identification point 1.

S24: and acquiring the coordinates of the wafer on the target to be detected in the coordinate system based on the image. The wafer may specifically be an LED chip.

S25: based on the coordinates of the wafer, the moving platform 30 is controlled to drive the thrust probe 40 to move to a corresponding position, and then the thrust probe 40 is controlled to perform thrust measurement on the wafer.

Steps S21 to S25 are the same as steps S11 to S15 in the above embodiment, and will not be repeated.

S26: and controlling the adsorption equipment to remove the wafer after the thrust measurement. Specifically, after the last one is subjected to the thrust measurement, the wafer is already detached from the carrier such as the circuit board, in order to prevent the detached wafer from interfering with the subsequent measurement, after the wafer is detached after the measurement is completed, the vacuum pump is controlled to be started, and then the detached wafer is adsorbed through the adsorption hole.

From the above, in this embodiment, the wafer after measurement is completed can be removed, so that the falling wafer is prevented from affecting the subsequent measurement, the measurement accuracy can be improved, and the measurement speed can be increased, thereby increasing the measurement efficiency.

In some embodiments, the thrust measuring device 100 includes: a moving stage 50, an image acquisition device 20, a moving platform 30, a thrust probe 40, and a control system 10; the moving object stage 50 is used for placing an object to be measured; the thrust probe 40 is disposed on the moving platform 30. In addition to this, the device comprises a transporting device and a fixing device, wherein the fixing device is arranged on the mobile platform 30; the control system 10 is also electrically connected to the transportation device and the fixture.

s30: controlling the transportation device to move the target to be detected to a target position; and under the condition that the target to be measured moves to the target position, controlling the fixing device to fix the target to be measured. The conveying device specifically comprises a screw rod, a motor and a conveying belt, wherein the screw rod is connected with a roller of the conveying belt, a rotating shaft of the motor is connected with the screw rod, and a control system 10 is electrically connected with the motor so as to control whether the motor works or not. When the target to be detected is transported, the motor is controlled to start, so that the conveyor belt is driven to run, and the target to be detected which is transported to the conveyor belt after the previous process is completed is driven to the target position. The target position is specifically a joint between the moving object table 50 and the conveyor belt, and the target to be measured moves from the conveyor belt to the moving object table 50 under the driving action of the conveyor belt.

The fixing device may specifically be a clamp, and after the object to be measured moves onto the moving stage 50, the clamp starts to process the object to be measured to clamp, so as to fix the object to be measured. Thereby facilitating the acquisition of the image of the target to be measured and facilitating the subsequent thrust measurement of the wafer on the target to be measured. The movement of the target to be measured in the measuring process is prevented, and the measuring precision can be improved.

S31: the moving stage 50 is controlled to move, so that the moving stage 50 drives the object to be measured to be located below the camera of the image acquisition device 20.

S32: after the object to be measured is located below the camera of the image acquisition device 20, the image acquisition device 20 is controlled to acquire an image of the object to be measured.

S33: after receiving the image from the image acquisition device 20, the identification point 1 on the object to be measured is acquired based on the image, and a coordinate system is formed based on the identification point 1.

S34: and acquiring the coordinates of the wafer on the target to be detected in the coordinate system based on the image. The wafer may specifically be an LED chip.

S35: based on the coordinates of the wafer, the moving platform 30 is controlled to drive the thrust probe 40 to move to a corresponding position, and then the thrust probe 40 is controlled to perform thrust measurement on the wafer.

Steps S31 to S35 are the same as steps S11 to S15 in the above embodiment, and will not be repeated.

In some embodiments, the thrust detection device includes: a moving stage 50, an image acquisition device 20, a moving platform 30, a thrust probe 40, and a control system 10; the moving object stage 50 is used for placing an object to be measured; the thrust probe 40 is disposed on the moving platform 30. In addition, the thrust detection device may further include a distance measuring device, which is connected to the thrust probe 40;

s41: the moving stage 50 is controlled to move, so that the moving stage 50 drives the object to be measured to be located below the camera of the image acquisition device 20.

S42: after the object to be measured is located below the camera of the image acquisition device 20, the image acquisition device 20 is controlled to acquire an image of the object to be measured.

S43: after receiving the image from the image acquisition device 20, the identification point 1 on the object to be measured is acquired based on the image, and a coordinate system is formed based on the identification point 1.

S44: and acquiring the coordinates of the wafer on the target to be detected in the coordinate system based on the image. The wafer may specifically be an LED chip.

Steps S41 to S44 are the same as steps S11 to S14 in the above embodiment, and will not be repeated.

S45: controlling the thrust probe 40 to move to correspond to the wafer based on the coordinates of the wafer; controlling a distance measuring device to measure the height of the wafer corresponding to the thrust probe 40; controlling the contact area of the wafer and the thrust probe 40 to be within a set range based on the height of the wafer; and controlling the thrust probe 40 to perform thrust measurement on the wafer under the condition that the contact area of the wafer and the thrust probe 40 is in a set range.

The distance measuring device is specifically a laser measurer, laser of the laser measurer irradiates onto the upper surface of the wafer, then the laser measurer can obtain measurement data based on feedback of the laser, the measurement data is compared with preset height data set in advance, a difference value is calculated, and the height of the thrust probe 40 is adjusted based on the difference value, so that the contact area between the thrust probe 40 and the side wall of the wafer is in a certain range.

For example, when the thrust measurement needs to be performed on the wafer in the first row and the first column shown in fig. 1, the moving platform 30 is controlled to move above the wafer in the first row and the first column along the X direction and/or the Y direction, that is, the thrust probe 40 is driven to move to the position of the coordinates 1-1-R, where the thrust probe 40 corresponds to the wafer.

The laser measurer then measures the wafer and obtains measurement data, then compares the measurement data with preset height data and calculates a difference value, determines the downward movement distance of the thrust probe 40 based on the difference value, and then controls the moving platform 30 to move downward along the Z direction until the thrust probe 40 contacts with the side wall of the wafer, and the contact area of the thrust probe 40 and the side wall of the wafer is in a certain range. The moving platform 30 then moves, driving the thrust probe 40 to push the wafer until the wafer drops. At this time, the thrust probe 40 will feed back the thrust value to the control system 10, and the control system 10 can obtain the thrust value of the wafer with coordinates of 1-1-R.

Thereby, the measured thrust value data is made more accurate. And when measuring a plurality of wafers, because the heights of the wafers have more or less certain errors, the contact areas of the thrust probes 40 and the wafers are basically consistent, so that the thrust values of the wafers can be compared, and the bonding strength of the whole object to be measured can be well evaluated through the thrust values of the wafers.

Referring to fig. 3, fig. 3 is a flowchart of a thrust measurement method according to an embodiment of the present application. With reference to fig. 1 and fig. 2, an embodiment of the present application further provides a thrust measurement method, including:

s011: and acquiring an identification point 1 on the target to be detected, and forming a coordinate system based on the identification point 1. Specifically, the identification point 1 may be set on the target to be measured in advance, then an image of the target to be measured is obtained by photographing or the like, the image is transmitted to the control system 10 such as a computer, the control system 10 recognizes the identification point 1 on the image, and then a coordinate system is generated.

S012: and acquiring the coordinates of the wafer on the target to be detected in the coordinate system. The wafer may specifically be an LED chip. Those skilled in the art will appreciate that there will typically be tens of thousands of wafers on the target to be tested, taking for convenience of description the coordinates of the wafer in one pixel cell of the first column on the target to be tested as an example.

S013: based on the coordinates of the wafer, the thrust probe 40 is controlled to perform thrust measurement on the wafer. Referring to fig. 1, when a thrust measurement is required for the first row and first column wafers, the moving platform 30 is controlled to move above the first row and first column wafers along the X direction and/or the Y direction, that is, the thrust probe 40 is driven to move to the coordinates 1-1-R. The thrust probe 40 is then controlled to contact the sidewall of the wafer so that the thrust probe 40 pushes the wafer until the wafer is dropped. At this time, the thrust probe 40 will feed back the thrust value to the control system 10, and the control system 10 can obtain the thrust value of the wafer with coordinates of 1-1-R.

For more specific embodiments of the method, reference may be made to the steps of the execution operation of the control system 10 in the thrust measuring device 100, which are not described herein.

From the above, the thrust measuring method provided by the embodiment of the application can automatically align, has higher alignment accuracy and greatly improves the measuring efficiency through the establishment of the coordinate system and the identification of the coordinates of the wafer in the coordinate system.

In some embodiments, a thrust measurement method is provided that includes the steps of:

s021: and acquiring a first mark point, a second mark point and a third mark point on the target to be detected, and forming a coordinate system based on the first mark point, the second mark point and the third mark point. Specifically, the first identification point, the second identification point and the third identification point are preset on the target to be measured, and the target to be measured is taken as a rectangular plate as an example, so that the first identification point, the second identification point and the third identification point can be respectively arranged at three corner positions of the rectangular plate. The captured image may also include a first identification point, a second identification point, and a third identification point, which may be identified by the control system 10 and then used to generate a coordinate system. Thus, a coordinate system can be quickly established.

S022: and acquiring the coordinates of the wafer on the target to be detected in the coordinate system.

S023: based on the coordinates of the wafer, the thrust probe 40 is controlled to perform thrust measurement on the wafer.

s031: and acquiring an identification point 1 on the target to be detected, and forming a coordinate system based on the identification point 1. Step S1 is the same as the above embodiment, and will not be described again.

S032: and acquiring coordinates of the set number of wafers on the target to be detected in the coordinate system to acquire the coordinates of the set number of wafers.

S033: the thrust probe 40 is controlled to perform thrust measurement on the set number of wafers based on the coordinates of the set number of wafers corresponding to the set number of wafers.

In this embodiment, coordinates of a set number of wafers are acquired, and thrust measurement is performed on the set number of wafers. The set number may be specifically set by an operator on the control system 10 before the measurement is performed on each batch of objects to be measured.

The set number is the number of samples to be sampled determined according to actual needs when measuring a certain batch of targets to be measured. For example, if the number of objects to be measured in a certain batch is very large, the number of sampled objects to be measured needs to be large, so that the adhesion condition of the objects to be measured in the batch can be better reflected. At this time, it is unnecessary to perform thrust measurement for all the wafers on each sampled target to be measured. The number of the sampled wafers on the target to be measured can be set. So that the detection efficiency can be increased with little influence on the detection accuracy.

The set number may be specifically between 50% and 70% of the total number of wafers on the target to be tested. Thus, the detection efficiency can be increased with little influence on the detection accuracy.

Those skilled in the art will appreciate that a set number of wafers may be selected from different areas on the object to be tested. Of course, the operator may preset how to divide the zones on the application software of the control system 10 and choose how much percent of the total number to measure in each zone before the batch of targets to be measured is detected. To increase the convenience of operation. The application software has a region division option and an input box for the percentage of each region detection. The area division options include three, the first: dividing into four edge areas and a middle area; second kind: divided into an upper region and a lower region; third kind: divided into a left side region and a right side region.

Specifically, for example: divided into four edge regions and a middle region located in the middle. Taking a set number of 60% of the total number of wafers as an example, 10% is selected at each of the four edge regions of the object to be measured, and 20% is selected at the middle of the object to be measured. Therefore, the wafer bonding strength of each area on the target to be tested can be evaluated, and the detection accuracy is increased.

For another example, the wafer is divided into an upper region and a lower region, and 30% of the total number of wafers is selected in each of the upper region and the lower region. For another example, the wafer is divided into a left side region and a right side region, and wafers of 30% total are selected in each of the left side region and the right side region. For another example, it is divided into an upper region where 40% of the total number of wafers are selected for measurement, a lower region where 20% of the total number of wafers are selected for measurement, and so on.

s041: and acquiring an identification point 1 on the target to be detected, and forming a coordinate system based on the identification point 1.

S042: and acquiring coordinates of the set number of wafers on the target to be detected in the coordinate system to acquire the coordinates of the set number of wafers.

S043: the thrust probe 40 is controlled to perform thrust measurement on the set number of wafers based on the coordinates of the set number of wafers corresponding to the set number of wafers.

S041 to S043 are the same as S031 to S033 in the above embodiments, and will not be described again.

S044: obtaining thrust values of a set number of wafers; and forming a thrust value distribution curve by utilizing the thrust values of the wafers with the set number and the coordinates of the wafers with the set number in one-to-one correspondence, and performing thrust analysis by utilizing the thrust value distribution curve. The thrust values of the wafers with the set number are utilized and are in one-to-one correspondence with the coordinates of the corresponding wafers to generate a thrust value distribution curve, so that the thrust value distribution curve can be analyzed, and the bonding strength of the whole wafer to be tested can be determined according to the analysis result.

Specifically, the thrust value distribution curve is compared with a pre-stored reference distribution curve, and if more than 98% of the thrust value distribution curve falls on the reference distribution curve, the thrust measurement of the target to be measured is proved to be qualified. And if more than 2% of the thrust value distribution curve falls below the reference distribution curve, confirming that the thrust measurement of the target to be measured is unqualified.

s051: and acquiring an identification point 1 on the target to be detected, and forming a coordinate system based on the identification point 1.

S052: and acquiring the coordinates of the wafer on the target to be detected in the coordinate system.

S053: based on the coordinates of the wafer, the thrust probe 40 is controlled to perform thrust measurement on the wafer.

Steps S051 to S053 are the same as steps S011 to S13 in the above embodiment, and will not be described again.

S054: the adsorption equipment is controlled to clean the wafer after the thrust measurement. The specific adsorption manner in this step is the same as that described in the thrust measuring device 100 in the above embodiment, and will not be described again.

s061: and acquiring an identification point 1 on the target to be detected, and forming a coordinate system based on the identification point 1.

S062: and acquiring the coordinates of the wafer on the target to be detected in the coordinate system.

Steps S061 to S062 are the same as steps S011 to S12 in the above embodiment, and will not be described again.

S063: controlling the thrust probe 40 to move to correspond to the wafer based on the coordinates of the wafer; controlling a distance measuring device to measure the height of the wafer corresponding to the thrust probe 40; controlling the contact area of the wafer and the thrust probe 40 to be within a set range based on the height of the wafer; and controlling the thrust probe 40 to perform thrust measurement on the wafer under the condition that the contact area of the wafer and the thrust probe 40 is in a set range. The specific implementation of this step is the same as the adsorption manner described in the thrust measuring device 100 in the above embodiment, and will not be repeated.

s070: controlling the transportation device to move the target to be detected to a target position; and under the condition that the target to be measured moves to the target position, controlling the fixing device to fix the target to be measured. The specific implementation of this step is the same as the adsorption manner described in the thrust measuring device 100 in the above embodiment, and will not be repeated.

S071: and acquiring an identification point 1 on the target to be detected, and forming a coordinate system based on the identification point 1.

S072: and acquiring the coordinates of the wafer on the target to be detected in the coordinate system.

S073: based on the coordinates of the wafer, the thrust probe 40 is controlled to perform thrust measurement on the wafer.

Steps S071 to S073 are the same as steps S011 to S13 in the above embodiment, and will not be repeated.

Referring to fig. 4, fig. 4 is a schematic structural diagram of a thrust measuring device according to an embodiment of the present disclosure. The embodiment of the application also provides a thrust measuring device 100, including: a first acquisition unit 110, a second acquisition unit 120, and a control unit 130. The first obtaining unit 110 is configured to obtain an identification point 1 on a target to be measured, and form a coordinate system based on the identification point 1. The second obtaining unit 120 is configured to obtain coordinates of the wafer on the target to be measured in the coordinate system. The control unit 130 is configured to control the thrust meter to perform thrust measurement on the wafer based on the coordinates of the wafer.

The first obtaining unit 110 is specifically configured to: and acquiring a first mark point, a second mark point and a third mark point on the target to be detected, and forming a coordinate system based on the first mark point, the second mark point and the third mark point.

The second acquisition unit 120 is specifically configured to: and acquiring coordinates of the set number of wafers on the target to be detected in the coordinate system to acquire the coordinates of the set number of wafers. The thrust probe 40 is controlled to perform thrust measurement on the set number of wafers based on the coordinates of the set number of wafers corresponding to the set number of wafers.

The control unit 130 is specifically configured to: controlling the thrust probe 40 to move to correspond to the wafer based on the coordinates of the wafer; controlling a distance measuring device to measure the height of the wafer corresponding to the thrust probe 40; controlling the contact area of the wafer and the thrust probe 40 to be within a set range based on the height of the wafer; and controlling the thrust probe 40 to perform thrust measurement on the wafer under the condition that the contact area of the wafer and the thrust probe 40 is in a set range.

In some embodiments, the thrust detecting device may further include a third acquiring unit for acquiring a thrust value of a set number of wafers. The control unit 130 is further configured to: and forming a thrust value distribution curve by utilizing the thrust values of the wafers with the set number and the coordinates of the wafers with the set number in one-to-one correspondence, and performing thrust analysis by utilizing the thrust value distribution curve.

In some embodiments, after controlling the thrust probe 40 to make a thrust measurement on the wafer, the control unit 130 is further configured to: the adsorption equipment is controlled to clean the wafer after the thrust measurement.

Referring to fig. 5, fig. 5 is a schematic structural diagram of a control system according to an embodiment of the present application. The control system 100 shown in the embodiments of the present application may include a memory 101, a processor 102. Further optionally, a communication interface 103 and a bus 104 may be included, wherein the memory 101, the processor 102 and the communication interface 103 are communicatively coupled to each other via the bus 104. The communication interface 103 is used for data interaction with the drive control device 60.

The memory 101 is used to provide a storage space, and data such as an operating system and a computer program may be stored in the storage space. Memory 101 includes, but is not limited to, random access memory (random access memory, RAM), read-only memory (ROM), erasable programmable read-only memory (erasable programmable read only memory, EPROM), or portable read-only memory (compact disc read-only memory, CD-ROM).

The processor 102 is a module for performing arithmetic operations and logical operations, and may be one or a combination of processing modules such as a central processing unit (central processing unit, CPU), a graphics card processor (graphics processing unit, GPU) or a microprocessor (microprocessor unit, MPU).

The memory 101 stores a computer program therein, and the processor 102 calls the computer program stored in the memory 101 to execute the thrust force measurement method shown in any of the above embodiments. The specific details of the execution method of the processor 102 may refer to the steps of the thrust measurement method, and are not described herein.

Accordingly, the processor 102 invokes the computer program stored in the memory 101, and may also be used to execute the method steps executed by the first acquiring unit 110, the second acquiring unit 120, and the control unit 130 in the thrust measuring device, which are not described herein.

The embodiments of the present application further provide a computer readable storage medium, where a computer program is stored, where the thrust measurement method shown in any of the embodiments may be implemented when the computer program runs on one or more processors.

Embodiments of the present application also provide a computer program product, which when executed on a processor, may implement the thrust force measurement method shown in any of the above embodiments.

The foregoing has outlined rather broadly the more detailed description of embodiments of the present application, wherein specific examples are provided herein to illustrate the principles and embodiments of the present application, and wherein the above examples may be used to facilitate an understanding of the methods and core concepts of the present application.

Claims

1. A thrust force measuring method, characterized by comprising:

acquiring an identification point on a target to be detected, and forming a coordinate system based on the identification point;

acquiring coordinates of a wafer on the target to be measured in the coordinate system;

controlling a thrust probe to measure thrust on the wafer based on the coordinates of the wafer;

the method comprises the steps of obtaining coordinates of a wafer on the target to be detected in the coordinate system; based on the coordinates of the wafer, controlling a thrust probe to perform thrust measurement on the wafer specifically includes:

acquiring coordinates of a set number of wafers on the target to be measured in the coordinate system to acquire coordinates of the set number of wafers;

controlling a thrust probe to perform thrust measurement on the wafers with the set number based on coordinates of the wafers with the set number corresponding to the wafers with the set number;

obtaining thrust values of a set number of wafers;

forming a thrust value distribution curve by utilizing the thrust values of the wafers with the set number and the coordinates of the wafers with the set number in one-to-one correspondence, performing thrust analysis by utilizing the thrust value distribution curve, specifically comparing the thrust value distribution curve with a pre-stored reference distribution curve, and if more than 98% of the thrust value distribution curve falls on the reference distribution curve, proving that the thrust measurement of the target to be measured is qualified; and if more than 2% of the thrust value distribution curve falls below the reference distribution curve, confirming that the thrust measurement of the target to be measured is unqualified.

2. The method of claim 1, further comprising, after controlling the thrust probe to perform thrust measurement on the wafer:

the adsorption equipment is controlled to clean the wafer after the thrust measurement.

3. The thrust measurement method according to claim 1, wherein controlling the thrust probe to perform thrust measurement on the wafer based on coordinates of the wafer, specifically comprises:

controlling a thrust probe to move to correspond to the wafer based on the coordinates of the wafer;

controlling a distance measuring device to measure the height of the wafer corresponding to the thrust probe;

controlling the contact area of the wafer and the thrust probe to be in a set range based on the height of the wafer;

and controlling the thrust probe to perform thrust measurement on the wafer under the condition that the contact area of the wafer and the thrust probe is in a set range.

4. A thrust measuring method according to any one of claims 1 to 3, further comprising, before acquiring the identification point on the object to be measured:

controlling the transportation device to move the target to be detected to a target position;

and under the condition that the target to be measured moves to the target position, controlling the fixing device to fix the target to be measured.

5. A thrust measuring device for performing the thrust measuring method according to any one of claims 1 to 4; characterized by comprising the following steps: the device comprises a movable objective table, an image acquisition device, a movable platform, a thrust probe and a control system; the movable object stage is used for placing an object to be measured; the thrust probe is arranged on the mobile platform;

the control system is used for:

controlling the moving object stage to move so that the moving object stage drives the object to be detected to be positioned below a camera of the image acquisition equipment;

after the object to be detected is positioned below a camera of the image acquisition equipment, controlling the image acquisition equipment to acquire an image of the object to be detected;

after receiving the image from the image acquisition equipment, acquiring an identification point on the target to be detected based on the image, and forming a coordinate system based on the identification point;

acquiring coordinates of a wafer on the target to be detected in the coordinate system based on the image;

based on the coordinates of the wafer, controlling the moving platform to drive the thrust probe to move to a corresponding position, or controlling the moving object stage to drive the target to be detected to move to a corresponding position; the thrust probe is then controlled to make thrust measurements on the wafer.

6. The thrust measuring device of claim 5, further comprising an adsorption apparatus; the adsorption equipment comprises a vacuum pump, a hose and an adsorption hole arranged on the thrust probe; the vacuum pump is connected with the adsorption hole through the hose;

the control system is further configured to: and controlling the adsorption equipment to remove the wafer after the thrust measurement.

7. The thrust measuring device of claim 6, further comprising a transport device and a securing device, the securing device being disposed on the mobile platform;

the control system is further configured to: controlling the transportation device to move the target to be detected to a target position; and under the condition that the target to be measured moves to the target position, controlling the fixing device to fix the target to be measured.

8. The thrust measurement device of any one of claims 5 to 7, further comprising a ranging device connected to the thrust probe;

the control system is used for controlling the thrust probe to measure the thrust of the wafer based on the coordinates of the wafer, and specifically comprises the following steps: