CN113358557A - Thrust measurement method and device - Google Patents
Thrust measurement method and device Download PDFInfo
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- CN113358557A CN113358557A CN202110569827.4A CN202110569827A CN113358557A CN 113358557 A CN113358557 A CN 113358557A CN 202110569827 A CN202110569827 A CN 202110569827A CN 113358557 A CN113358557 A CN 113358557A
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Abstract
The application discloses a thrust measurement method and a device, wherein the thrust measurement method comprises the steps of obtaining identification points on a target to be measured, and forming a coordinate system based on the identification points; acquiring the coordinates of the wafer on the target to be detected in the coordinate system; and controlling a thrust probe to perform thrust measurement on the wafer based on the coordinates of the wafer. Through the establishment of the coordinate system and the identification of the coordinates of the wafer in the coordinate system, the automatic alignment can be realized, the alignment accuracy is higher, and the measurement efficiency is greatly improved.
Description
Technical Field
The application relates to the technical field of measuring equipment, in particular to a thrust measuring method and device.
Background
Light Emitting Diode (LED) display screens have the advantages of wide color gamut, high brightness, large viewing angle, low power consumption, long service life, and the like, and therefore LED display screens are widely used in the display field. Such as the common stock exchange and financial information display, airport flight dynamic information display, port and station passenger guidance information display, stadium information display, road traffic information display, electric power scheduling, vehicle dynamic tracking and other scheduling command center information display, market shopping center and other service fields business propaganda information display, advertising media products and the like.
No matter which field the LED display screen is applied to, pursuing image definition is a great trend that the requirement for resolution is higher and higher. The higher resolution means that the required LED pixel cells need to have smaller size and pitch. A conventional LED lamp, typically 1000 microns long by 1000 microns wide by 1000 microns thick), while a Mini LED lamp, typically 200 microns long by 100 microns wide by 80 microns thick. Compared with the traditional LED lamp, the mini LED lamp with higher resolution has the advantages that the area is reduced by 50 times, the volume is reduced by 625 times, and the product is a micron-level product.
Under general condition, the LED display screen is formed by a plurality of display box body concatenations, and each display box body generally includes a plurality of display module assembly, and each display module assembly comprises backshell, lamp plate and apron. The lamp panel comprises a circuit board and LED lamp beads, LED chips or LED wafers fixed on the circuit board. LED beads, LED chips or LED chips are typically attached to the circuit board by adhesive. The intensity of LED lamp beads, LED chips or LED wafers, which are adhered on the circuit board, is a very important standard for constant product quality no matter the traditional large-size large-space LED lamp or the small-size small-space mini LED lamp.
Traditional LED display screen adopts traditional thrust gauge to measure the thrust of LED lamp pearl, LED chip or LED wafer to adhesive strength. However, the conventional thrustor automatically executes a thrust test through manual alignment, and because the conventional LED is packaged by a shell, the volume is large, the contact area is large, and the requirements for manual alignment and thrust are not high. However, if the thrust of the mini LED needs to be measured, the accuracy and the measurement efficiency are very low by using the conventional thrust meter.
Disclosure of Invention
The application aims to provide a thrust measuring method and device, which realize automatic alignment, improve alignment accuracy and improve measuring efficiency.
The present application provides, in a first aspect, a thrust measurement method, including: acquiring identification points on a target to be detected, and forming a coordinate system based on the identification points; acquiring the coordinates of the wafer on the target to be detected in the coordinate system; and controlling a thrust probe to perform thrust measurement on the wafer based on the coordinates of the wafer.
In some embodiments, coordinates of a wafer on the target to be measured in the coordinate system are acquired; based on the coordinates of the wafer, controlling a thrust probe to perform thrust measurement on the wafer, specifically comprising: acquiring the coordinates of a set number of wafers on the target to be detected in the coordinate system to obtain a set number of coordinates; and controlling the thrust probe to perform thrust measurement on the set number of wafers based on the set number of coordinates corresponding to the set number of wafers.
In some embodiments, after controlling the thrust probe to perform thrust measurement on a set number of wafers based on a set number of coordinates corresponding to the set number of wafers, the method further includes: acquiring the thrust values of a set number of wafers; and forming a thrust value distribution curve by utilizing the thrust values of the set number of wafers and the set number of coordinates in a one-to-one correspondence manner, and carrying out thrust analysis by utilizing the thrust value distribution curve.
In some embodiments, after controlling the thrust probe to perform the thrust measurement on the wafer, the method further includes: and controlling the adsorption equipment to clear the wafer after the thrust measurement.
In some embodiments, controlling a thrust probe to perform a thrust measurement on the wafer based on the coordinates of the wafer specifically includes: controlling a thrust probe to move to correspond to the wafer based on the coordinates of the wafer; controlling a distance measuring device to measure the height of the wafer corresponding to the thrust probe; controlling the contact area of the wafer and the thrust probe to be within a set range based on the height of the wafer; and controlling the thrust probe to perform thrust measurement on the wafer under the condition that the contact area of the wafer and the thrust probe is in a set range.
In some embodiments, before acquiring the identification point on the target to be measured, the method further includes: controlling the transportation device to move the target to be detected to a target position; and under the condition that the target to be detected moves to the target position, controlling a fixing device to fix the target to be detected.
The present application provides in a second aspect a thrust measuring device comprising: the device comprises a movable objective table, an image acquisition device, a movable platform, a thrust probe and a control system; the movable object stage is used for placing an object to be measured; the thrust probe is arranged on the moving platform; the control system is configured to: controlling the mobile object stage to move so that the mobile object stage drives the object to be measured to be positioned below a camera of the image acquisition equipment; after the target to be detected is positioned below the camera of the image acquisition equipment, controlling the image acquisition equipment to acquire an image of the target to be detected; after receiving the image from the image acquisition equipment, acquiring an identification point on the target to be detected based on the image, and forming a coordinate system based on the identification point; acquiring the coordinates of the wafer on the target to be detected in the coordinate system based on the image; based on the coordinates of the wafer, controlling the moving platform to drive the thrust probe to move to a corresponding position, or controlling the moving objective table to drive the target to be detected to move to a corresponding position; and controlling the thrust probe to perform thrust measurement on the wafer.
In some embodiments, further comprising an adsorption apparatus; the adsorption equipment comprises a vacuum pump, a hose and an adsorption hole arranged on the thrust probe; the vacuum pump is connected with the adsorption hole through the hose; the control system is further configured to: and controlling the adsorption equipment to clear the wafer after the thrust measurement.
In some embodiments, the mobile platform further comprises a transportation device and a fixing device, wherein the fixing device is arranged on the mobile platform; the control system is further configured to: controlling the transportation device to move the target to be detected to a target position; and under the condition that the target to be detected moves to the target position, controlling a fixing device to fix the target to be detected.
In some embodiments, the device further comprises a distance measuring device connected with the thrust probe; the control system is used for controlling the thrust probe to carry out thrust measurement on the wafer based on the coordinate of the wafer, and specifically comprises: controlling a thrust probe to move to correspond to the wafer based on the coordinates of the wafer; controlling a distance measuring device to measure the height of the wafer corresponding to the thrust probe; controlling the contact area of the wafer and the thrust probe to be within a set range based on the height of the wafer; and controlling the thrust probe to perform thrust measurement on the wafer under the condition that the contact area of the wafer and the thrust probe is in a set range.
In the application, through the establishment of the coordinate system and the identification of the coordinates of the wafer in the coordinate system, the automatic alignment can be realized, the alignment accuracy is higher, and the measurement efficiency is greatly improved.
Drawings
In order to more clearly explain the technical solution of the present application, the drawings used in the embodiments will be briefly described below.
FIG. 1 is a schematic diagram of the structure of a target under test in the present application;
FIG. 2 is a schematic structural diagram of a thrust measurement device provided in an embodiment of the present application;
FIG. 3 is a flow chart of a thrust measurement method provided by an embodiment of the present application;
FIG. 4 is a schematic structural diagram of a thrust measurement device provided in an embodiment of the present application;
fig. 5 is a schematic structural diagram of a control system according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application.
Referring to fig. 1 and fig. 2, fig. 1 is a schematic structural diagram of a target to be measured in the present application; fig. 2 is a schematic structural diagram of a thrust measuring device provided in an embodiment of the present application. An embodiment of the present application provides a thrust measurement device, including: a mobile object stage 50, an image acquisition device 20, a mobile platform 30, a thrust probe 40 and a control system 10; the movable object stage 50 is used for placing an object to be measured; the thrust probe 40 is disposed on the movable platform 30. Wherein the mobile object stage 50 and the mobile platform 30 are connected to the control system 10 by a motor, respectively, so that the control system 10 can control the movement of the mobile object stage 50 and the mobile platform 30 by controlling the motor. The image acquisition device 20 and the thrust probe 40 are electrically connected to the control system 10, respectively, so that the control system 10 can acquire images taken by the image acquisition device 20 and can send work instructions to the thrust probe 40.
Specifically, the image acquisition device 20 may be a camera or a video camera or the like. Wherein the image capturing apparatus 20 and the moving platform 30 are provided above the moving stage 50, and the camera of the image capturing apparatus 20 faces the moving stage 50. The thrust probe 40 is provided on the moving platform 30, and the thrust probe 40 faces the moving stage 50.
It is assumed that the longitudinal direction of the entire thrust measuring device 100 is the X direction, the width direction is the Y direction, and the height direction is the Z direction. The movable stage 50 can be moved in the X direction and the Y direction, and the movable platform 30 can be moved in the X direction, the Y direction, and the Z direction.
The moving object stage 50 can be connected with the rotating shaft of the motor through the precision lead screw, the control system 10 is electrically connected with the motor, and the motor controls the precision lead screw to rotate, so that the moving object stage 50 is driven to move. Therefore, the movable object stage 50 can be controlled to drive the objects to be measured of different models to move slightly, so that the objects to be measured of different models can accurately move to the position right below the camera of the image acquisition device 20.
The control system 10 may be a notebook, a desktop, a tablet computer, or other electronic devices that can be installed with an application program. And then installing the corresponding application program on the equipment, and opening the application program when in use, and automatically or manually controlling other equipment to perform corresponding operation.
Specifically, the control system 10 is configured to perform the following operations:
s11: and controlling the moving object stage 50 to move, so that the moving object stage 50 drives the object to be measured to be located below the camera of the image acquisition device 20. Specifically, the moving stage 50 may be controlled to move slightly along the X direction and/or the Y direction to correct the position of the target to be measured, so that the target to be measured is located under the camera, and the captured image may include all the target to be measured, thereby preventing a part of the edge of the target to be measured from being captured into the image.
S12: after the target to be measured is located below the camera of the image acquisition device 20, the image acquisition device 20 is controlled to acquire an image of the target to be measured.
S13: after receiving the image from the image acquisition device 20, acquiring the identification point 1 on the target to be detected based on the image, and forming a coordinate system based on the identification point 1. Specifically, the target to be measured is provided with the identification point 1 in advance, and as an example, the target to be measured is a rectangular plate, and a surface can be formed by three points, so that the identification points 1 can be respectively arranged at three corner positions of the rectangular plate. Three identification points 1 are also included in the captured image, and the control system 10 can recognize the three identification points 1 and then generate a coordinate system using the three identification points 1.
S14: and acquiring the coordinates of the wafer on the target to be detected in the coordinate system based on the image. The wafer may specifically be an LED chip. It will be appreciated by those skilled in the art that there are typically tens of thousands of wafers on the target, and for convenience of description, the coordinates of the wafer in one pixel unit in the first column on the target are identified as an example.
In detail, each pixel unit includes one RED (RED) LED chip, one GREEN (GREEN) LED chip, one BLUE (BLUE) LED chip, that is, three wafers. Then, referring to fig. 1, the coordinates of each identified wafer can be as follows: the first row and first column of wafers 11 have coordinates of 1-1-R, the second row and first column of wafers 12 have coordinates of 1-1-G, and the third row and first column of wafers 13 have coordinates of 1-1-B.
S15: based on the coordinates of the wafer, controlling the moving platform 30 to drive the thrust probe 40 to move to a corresponding position, or controlling the moving stage 50 to drive the target to be detected to move to a corresponding position; the thrust probe 40 is then controlled to make thrust measurements of the wafer.
In the case where the wafer is in a rectangular parallelepiped shape, the lower surface is a surface to be fixed to a carrier such as a circuit board, the upper surface is opposite to the lower surface, and the side walls are the remaining four wall surfaces located between the upper surface and the lower surface. In the thrust measurement, the thrust probe 40 is in contact with the side wall and applies a force to the side wall to cause the wafer to fall off from a carrier such as a circuit board, thereby obtaining a thrust value.
For example, when the thrust measurement is required for the first row and the first column of wafers, the moving platform 30 is controlled to move along the X direction and/or the Y direction to above the first row and the first column of wafers, i.e. to move the thrust probe 40 to the coordinate 1-1-R. Then the moving platform 30 is controlled to move downwards along the Z direction until the thrust probe 40 contacts with the side wall of the wafer, and then the moving platform 30 moves to drive the thrust probe 40 to push the wafer until the wafer drops. At this time, the thrust probe 40 will feed back the thrust value to the control system 10, and the control system 10 can obtain the thrust value of the wafer with the coordinate of 1-1-R.
And when the thrust value of the wafers in the second row and the first column needs to be detected, controlling the moving platform 30 to move along the X direction until the thrust probes 40 contact the wafers in the second row and the first column, and then continuously controlling the moving platform 30 to move along the X direction until the thrust probes 40 push away the wafers in the second row and the first column. At this time, the thrust probe 40 will feed back the thrust value to the control system 10, and the control system 10 can obtain the thrust value of the wafer with coordinates 1-1-G.
Of course, in other embodiments, the moving stage 50 may be controlled to move the target to be tested, so that the wafer in the first row and the first column is located below the thrust probe 40.
Of course, it is understood that the moving platform 30 may be controlled to move the thrust probe 40 to the origin of the coordinate system for alignment, and then the moving platform 30 may be controlled to move the thrust probe 40 to the position for thrust measurement of each wafer.
The thrust measuring device 100 provided in the embodiment of the present application automatically moves the target to be measured by moving the object stage 50, so as to facilitate the image obtaining device 20 to obtain the image; then identifying the identification point 1 in the image to establish a coordinate system; then, the coordinates of the wafer are identified based on the coordinate system, and then the thrust probe 40 is moved to the corresponding position according to the coordinates, and thrust measurement is performed on the wafer. Therefore, the coordinate system is established, and the coordinates of the wafer in the coordinate system are identified, so that the automatic alignment can be realized, the alignment accuracy is higher, and the measurement efficiency is greatly improved.
In some embodiments, the thrust detection device includes: a mobile object stage 50, an image acquisition device 20, a mobile platform 30, a thrust probe 40 and a control system 10; the movable object stage 50 is used for placing an object to be measured; the thrust probe 40 is disposed on the movable platform 30. In addition, the thrust measuring apparatus 100 includes an adsorption device; the adsorption equipment comprises a vacuum pump, a hose and an adsorption hole arranged on the thrust probe 40; the vacuum pump is connected with the adsorption hole through the hose.
In this embodiment, the control system 10 is configured to perform the following operations:
s21: and controlling the moving object stage 50 to move, so that the moving object stage 50 drives the object to be measured to be located below the camera of the image acquisition device 20.
S22: after the target to be measured is located below the camera of the image acquisition device 20, the image acquisition device 20 is controlled to acquire an image of the target to be measured.
S23: after receiving the image from the image acquisition device 20, acquiring the identification point 1 on the target to be detected based on the image, and forming a coordinate system based on the identification point 1.
S24: and acquiring the coordinates of the wafer on the target to be detected in the coordinate system based on the image. The wafer may specifically be an LED chip.
S25: based on the coordinates of the wafer, the moving platform 30 is controlled to drive the thrust probe 40 to move to a corresponding position, and then the thrust probe 40 is controlled to perform thrust measurement on the wafer.
Steps S21 to S25 are the same as steps S11 to S15 in the above embodiment, and are not repeated.
S26: and controlling the adsorption equipment to clear the wafer after the thrust measurement. Specifically, the last wafer is separated from a carrier such as a circuit board after the thrust measurement, and in order to prevent the separated wafer from interfering with the subsequent measurement, the vacuum pump is controlled to start after the wafer after the measurement is separated, and then the separated wafer is adsorbed through the adsorption hole.
Therefore, in the embodiment, the wafer after the measurement is finished can be removed, the falling-off wafer is prevented from influencing the subsequent measurement, the measurement precision can be improved, the measurement speed is accelerated, and the measurement efficiency is increased.
In some embodiments, the thrust measurement device 100 includes: a mobile object stage 50, an image acquisition device 20, a mobile platform 30, a thrust probe 40 and a control system 10; the movable object stage 50 is used for placing an object to be measured; the thrust probe 40 is disposed on the movable platform 30. Besides, the device also comprises a transportation device and a fixing device, wherein the fixing device is arranged on the mobile platform 30; the control system 10 is also electrically connected to the transportation device and the fixation device.
In this embodiment, the control system 10 is configured to perform the following operations:
s30: controlling the transportation device to move the target to be detected to a target position; and under the condition that the target to be detected moves to the target position, controlling a fixing device to fix the target to be detected. The conveying device specifically comprises a lead screw, a motor and a conveying belt, wherein the lead screw is connected with a roller of the conveying belt, a rotating shaft of the motor is connected with the lead screw, and the control system 10 is electrically connected with the motor so as to control whether the motor works or not. When the target to be detected is transported, the motor is controlled to be started, so that the conveying belt is driven to operate, and the target to be detected which is transmitted to the conveying belt after the previous process is completed is driven to the target position. The target position is specifically the joint of the movable objective table 50 and the conveying belt, and under the driving action of the conveying belt, the target to be measured moves from the conveying belt to the movable objective table 50.
The fixing device may be specifically a clamp, and after the target to be measured moves onto the moving stage 50, the clamp starts to process the target to be measured and clamp the target to be measured, so as to fix the target to be measured. Therefore, the image of the target to be measured can be conveniently acquired, and the subsequent thrust measurement of the wafer on the target to be measured can be conveniently carried out. The target to be measured is prevented from moving in the measuring process, and the measuring precision can be improved.
S31: and controlling the moving object stage 50 to move, so that the moving object stage 50 drives the object to be measured to be located below the camera of the image acquisition device 20.
S32: after the target to be measured is located below the camera of the image acquisition device 20, the image acquisition device 20 is controlled to acquire an image of the target to be measured.
S33: after receiving the image from the image acquisition device 20, acquiring the identification point 1 on the target to be detected based on the image, and forming a coordinate system based on the identification point 1.
S34: and acquiring the coordinates of the wafer on the target to be detected in the coordinate system based on the image. The wafer may specifically be an LED chip.
S35: based on the coordinates of the wafer, the moving platform 30 is controlled to drive the thrust probe 40 to move to a corresponding position, and then the thrust probe 40 is controlled to perform thrust measurement on the wafer.
Steps S31 to S35 are the same as steps S11 to S15 in the above embodiment, and are not repeated.
In some embodiments, the thrust detection device includes: a mobile object stage 50, an image acquisition device 20, a mobile platform 30, a thrust probe 40 and a control system 10; the movable object stage 50 is used for placing an object to be measured; the thrust probe 40 is disposed on the movable platform 30. Besides, the thrust detection device may further include a distance measuring device connected to the thrust probe 40;
in this embodiment, the control system 10 is configured to perform the following operations:
s41: and controlling the moving object stage 50 to move, so that the moving object stage 50 drives the object to be measured to be located below the camera of the image acquisition device 20.
S42: after the target to be measured is located below the camera of the image acquisition device 20, the image acquisition device 20 is controlled to acquire an image of the target to be measured.
S43: after receiving the image from the image acquisition device 20, acquiring the identification point 1 on the target to be detected based on the image, and forming a coordinate system based on the identification point 1.
S44: and acquiring the coordinates of the wafer on the target to be detected in the coordinate system based on the image. The wafer may specifically be an LED chip.
Steps S41 to S44 are the same as steps S11 to S14 in the above embodiment, and are not repeated.
S45: controlling the thrust probe 40 to move to correspond to the wafer based on the coordinates of the wafer; controlling a distance measuring device to measure the height of the wafer corresponding to the thrust probe 40; controlling a contact area of the wafer with the thrust probe 40 to be within a set range based on the height of the wafer; and controlling the thrust probe 40 to perform thrust measurement on the wafer under the condition that the contact area between the wafer and the thrust probe 40 is in a set range.
The distance measuring device is specifically a laser measurer, laser of the laser measurer is emitted onto the upper surface of the wafer, then the laser measurer can obtain measurement data based on feedback of the laser, the measurement data is compared with preset height data, a difference value is calculated, and the height of the thrust probe 40 is adjusted based on the difference value, so that the contact area of the thrust probe 40 and the side wall of the wafer is in a certain range.
For example, when the thrust measurement needs to be performed on the wafer in the first row and the first column shown in fig. 1, the moving platform 30 is controlled to move along the X direction and/or the Y direction to above the wafer in the first row and the first column, that is, the thrust probe 40 is driven to move to the coordinate 1-1-R, and at this time, the thrust probe 40 corresponds to the wafer.
Then, the laser measuring device measures the wafer to obtain measurement data, compares the measurement data with preset height data, calculates a difference value, determines a distance that the thrust probe 40 should move downward based on the difference value, and controls the moving platform 30 to move downward along the Z direction until the thrust probe 40 contacts with the sidewall of the wafer, where the contact area between the thrust probe 40 and the sidewall of the wafer is within a certain range. The movable platform 30 is then moved to drive the thrust probe 40 to push the wafer until the wafer falls. At this time, the thrust probe 40 will feed back the thrust value to the control system 10, and the control system 10 can obtain the thrust value of the wafer with the coordinate of 1-1-R.
Therefore, the measured thrust value data is more accurate. When a plurality of wafers are measured, because the heights of the plurality of wafers have certain errors, the contact areas of the thrust probes 40 and the wafers are controlled to be basically consistent, so that the thrust values of the plurality of wafers can be compared, and the bonding strength of the whole target to be measured can be evaluated well through the thrust values of the plurality of wafers.
Referring to fig. 3, fig. 3 is a flowchart of a thrust measurement method according to an embodiment of the present application. With reference to fig. 1 and fig. 2, an embodiment of the present application further provides a thrust measurement method, including:
s011: and acquiring an identification point 1 on the target to be detected, and forming a coordinate system based on the identification point 1. Specifically, the identification point 1 may be set on the target to be detected in advance, an image of the target to be detected is obtained by photographing or the like, the image is transmitted to the control system 10 such as a computer, the control system 10 identifies the identification point 1 on the image, and then a coordinate system is generated.
S012: and acquiring the coordinates of the wafer on the target to be detected in the coordinate system. The wafer may specifically be an LED chip. It will be appreciated by those skilled in the art that there are typically tens of thousands of wafers on the target, and for convenience of description, the coordinates of the wafer in one pixel unit in the first column on the target are identified as an example.
In detail, each pixel unit includes one RED (RED) LED chip, one GREEN (GREEN) LED chip, one BLUE (BLUE) LED chip, that is, three wafers. Then, referring to fig. 1, the coordinates of each identified wafer can be as follows: the first row and first column of wafers 11 have coordinates of 1-1-R, the second row and first column of wafers 12 have coordinates of 1-1-G, and the third row and first column of wafers 13 have coordinates of 1-1-B.
S013: based on the coordinates of the wafer, the thrust probe 40 is controlled to perform thrust measurements on the wafer. Referring to fig. 1, when the thrust measurement needs to be performed on the first row and the first column of the wafer, the moving platform 30 is controlled to move along the X direction and/or the Y direction to above the first row and the first column of the wafer, that is, the thrust probe 40 is driven to move to the coordinate 1-1-R. The thrust probe 40 is then controlled to contact the sidewall of the wafer such that the thrust probe 40 pushes the wafer until the wafer drops. At this time, the thrust probe 40 will feed back the thrust value to the control system 10, and the control system 10 can obtain the thrust value of the wafer with the coordinate of 1-1-R.
For a more specific implementation of the method, reference may be made to the step of executing the operation of the control system 10 in the thrust measuring device 100, which is not described in detail.
As can be seen from the above, the thrust measurement method provided in the embodiment of the present application can perform automatic alignment through the establishment of the coordinate system and the identification of the coordinates of the wafer in the coordinate system, so that the alignment accuracy is high, and the measurement efficiency is greatly improved.
In some embodiments, a thrust measurement method is provided that includes the steps of:
s021: the method comprises the steps of obtaining a first mark point, a second mark point and a third mark point on a target to be detected, and forming a coordinate system based on the first mark point, the second mark point and the third mark point. Specifically, the target to be detected is provided with a first identification point, a second identification point and a third identification point in advance, and the target to be detected is taken as a rectangular plate as an example, so that the first identification point, the second identification point and the third identification point can be respectively arranged at three corner positions of the rectangular plate. The captured image may also include the first identification point, the second identification point, and the third identification point, and the control system 10 may recognize the first identification point, the second identification point, and the third identification point and then generate the coordinate system using the first identification point, the second identification point, and the third identification point. Thereby, the coordinate system can be established quickly.
S022: and acquiring the coordinates of the wafer on the target to be detected in the coordinate system.
S023: based on the coordinates of the wafer, the thrust probe 40 is controlled to perform thrust measurements on the wafer.
In some embodiments, a thrust measurement method is provided that includes the steps of:
s031: and acquiring an identification point 1 on the target to be detected, and forming a coordinate system based on the identification point 1. Step S1 is the same as the above embodiment, and is not repeated.
S032: and acquiring the coordinates of the set number of wafers on the target to be detected in the coordinate system to obtain the set number of coordinates.
S033: the thrust probe 40 is controlled to perform thrust measurement on a set number of wafers based on a set number of coordinates corresponding to the set number of wafers.
In this embodiment, the coordinates of a set number of wafers are acquired, and thrust measurement is performed on the set number of wafers. The set number may be specifically set by an operator on the control system 10 before each batch of objects to be measured is measured.
The set quantity is the quantity to be sampled determined according to actual needs when a certain batch of targets to be measured is measured. For example, if the number of the targets to be measured in a certain batch is very large, the number of the sampled targets to be measured needs to be large, so that the bonding condition of the batches of the targets to be measured can be well reflected. In this case, it is not necessary to perform the thrust measurement on all the wafers on each sampled target to be measured. The measurement can be performed on a set number of wafers sampled from the target to be measured. Thereby, the detection efficiency can be increased with little influence on the detection accuracy.
The set number may be between 50% and 70% of the total number of wafers on the target. Thereby, the detection efficiency can be increased with little influence on the detection accuracy.
It will be appreciated by those skilled in the art that a set number of wafers may be selected from different areas of the target to be tested. Of course, the operator may set in advance how to perform the area division on the application software of the control system 10 before the batch of the target to be measured is detected, and select how many percent of the total number of the areas to perform the measurement. To increase the convenience of operation. The application has a region division option on it, and an input box for the percentage of each region detected. The region division options include three types, the first: dividing the image into four edge areas and a middle area; and the second method comprises the following steps: divided into an upper region and a lower region; and the third is that: divided into a left area and a right area.
Specifically, for example: divided into four edge regions and a central region located in the middle. For example, the set number is 60% of the total number of wafers, wherein 10% is selected for each of the four edge regions of the target to be tested, and 20% is selected for the middle of the target to be tested. Therefore, the wafer bonding strength of each area on the target to be detected can be evaluated, and the detection accuracy is increased.
As another example, the upper area and the lower area are divided, and 30% of the total number of wafers are selected in each of the upper area and the lower area. For another example, the wafer is divided into a left area and a right area, and 30% of the total number of wafers are selected in each of the left area and the right area. For another example, the wafer is divided into an upper area and a lower area, and a total number of wafers of 40% is selected in the upper area for measurement, and a total number of wafers of 20% is selected in the lower area for measurement, and so on.
In some embodiments, a thrust measurement method is provided that includes the steps of:
s041: and acquiring an identification point 1 on the target to be detected, and forming a coordinate system based on the identification point 1.
S042: and acquiring the coordinates of the set number of wafers on the target to be detected in the coordinate system to obtain the set number of coordinates.
S043: the thrust probe 40 is controlled to perform thrust measurement on a set number of wafers based on a set number of coordinates corresponding to the set number of wafers.
S041 to S043 are the same as S031 to S033 in the above embodiment, and are not described again.
S044: acquiring the thrust values of a set number of wafers; and forming a thrust value distribution curve by utilizing the thrust values of the set number of wafers and the set number of coordinates in a one-to-one correspondence manner, and carrying out thrust analysis by utilizing the thrust value distribution curve. And generating a thrust value distribution curve by utilizing the thrust values of the set number of wafers and corresponding the thrust values to the coordinates of the corresponding wafers one by one, so that the thrust value distribution curve can be analyzed, and the bonding strength of the whole wafer of the target to be detected is determined according to the analysis result.
Specifically, the thrust value distribution curve is compared with a pre-stored reference distribution curve, and if more than 98% of the thrust value distribution curve falls on the reference distribution curve, the thrust measurement of the target to be measured is qualified. And if more than 2% of the single multi-thrust-value distribution curve falls below the reference distribution curve, the thrust measurement of the target to be measured is proved to be unqualified.
In some embodiments, a thrust measurement method is provided that includes the steps of:
s051: and acquiring an identification point 1 on the target to be detected, and forming a coordinate system based on the identification point 1.
S052: and acquiring the coordinates of the wafer on the target to be detected in the coordinate system.
S053: based on the coordinates of the wafer, the thrust probe 40 is controlled to perform thrust measurements on the wafer.
Steps S051 to S053 are the same as steps S011 to S13 in the above embodiment, and are not described again.
S054: and controlling the adsorption equipment to clear the wafer after the thrust measurement. The specific adsorption manner of this step is the same as that described in the thrust measuring device 100 in the above embodiment, and is not described again.
In some embodiments, a thrust measurement method is provided that includes the steps of:
s061: and acquiring an identification point 1 on the target to be detected, and forming a coordinate system based on the identification point 1.
S062: and acquiring the coordinates of the wafer on the target to be detected in the coordinate system.
Steps S061 to S062 are the same as steps S011 to S12 in the above embodiment, and are not described again.
S063: controlling the thrust probe 40 to move to correspond to the wafer based on the coordinates of the wafer; controlling a distance measuring device to measure the height of the wafer corresponding to the thrust probe 40; controlling a contact area of the wafer with the thrust probe 40 to be within a set range based on the height of the wafer; and controlling the thrust probe 40 to perform thrust measurement on the wafer under the condition that the contact area between the wafer and the thrust probe 40 is in a set range. The specific implementation manner of this step is the same as the adsorption manner described in the thrust measuring device 100 in the above embodiment, and is not described again.
In some embodiments, a thrust measurement method is provided that includes the steps of:
s070: controlling the transportation device to move the target to be detected to a target position; and under the condition that the target to be detected moves to the target position, controlling a fixing device to fix the target to be detected. The specific implementation manner of this step is the same as the adsorption manner described in the thrust measuring device 100 in the above embodiment, and is not described again.
S071: and acquiring an identification point 1 on the target to be detected, and forming a coordinate system based on the identification point 1.
S072: and acquiring the coordinates of the wafer on the target to be detected in the coordinate system.
S073: based on the coordinates of the wafer, the thrust probe 40 is controlled to perform thrust measurements on the wafer.
Steps S071 to S073 are the same as steps S011 to S13 in the above embodiment, and are not described again.
Referring to fig. 4, fig. 4 is a schematic structural diagram of a thrust measurement device according to an embodiment of the present application. The embodiment of the present application further provides a thrust measurement apparatus 100, including: a first acquisition unit 110, a second acquisition unit 120, and a control unit 130. The first obtaining unit 110 is configured to obtain an identification point 1 on a target to be measured, and form a coordinate system based on the identification point 1. The second obtaining unit 120 is configured to obtain coordinates of a wafer on the target in the coordinate system. The control unit 130 is configured to control the thrust measurement instrument to perform thrust measurement on the wafer based on the coordinates of the wafer.
The first obtaining unit 110 is specifically configured to: the method comprises the steps of obtaining a first mark point, a second mark point and a third mark point on a target to be detected, and forming a coordinate system based on the first mark point, the second mark point and the third mark point.
The second obtaining unit 120 is specifically configured to: and acquiring the coordinates of the set number of wafers on the target to be detected in the coordinate system to obtain the set number of coordinates. The thrust probe 40 is controlled to perform thrust measurement on a set number of wafers based on a set number of coordinates corresponding to the set number of wafers.
The control unit 130 is specifically configured to: controlling the thrust probe 40 to move to correspond to the wafer based on the coordinates of the wafer; controlling a distance measuring device to measure the height of the wafer corresponding to the thrust probe 40; controlling a contact area of the wafer with the thrust probe 40 to be within a set range based on the height of the wafer; and controlling the thrust probe 40 to perform thrust measurement on the wafer under the condition that the contact area between the wafer and the thrust probe 40 is in a set range.
In some embodiments, the thrust force detection apparatus may further include a third acquisition unit configured to acquire a thrust force value for a set number of wafers. The control unit 130 is further configured to: and forming a thrust value distribution curve by utilizing the thrust values of the set number of wafers and the set number of coordinates in a one-to-one correspondence manner, and carrying out thrust analysis by utilizing the thrust value distribution curve.
In some embodiments, after controlling the thrust probe 40 to perform the thrust measurement on the wafer, the control unit 130 is further configured to: and controlling the adsorption equipment to clear the wafer after the thrust measurement.
Referring to fig. 5, fig. 5 is a schematic structural diagram of a control system according to an embodiment of the present disclosure. The control system 100 shown in the embodiments of the present application may include a memory 101 and a processor 102. Further optionally, a communication interface 103 and a bus 104 may be further included, wherein the memory 101, the processor 102 and the communication interface 103 are communicatively connected to each other through the bus 104. The communication interface 103 is used for data interaction with the drive control device 60.
The memory 101 is used to provide a storage space, and data such as an operating system and a computer program may be stored in the storage space. The memory 101 includes, but is not limited to, a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM), or a portable read-only memory (CD-ROM).
The processor 102 is a module for performing arithmetic operations and logical operations, and may be one or a combination of plural kinds of processing modules such as a Central Processing Unit (CPU), a Graphics Processing Unit (GPU), a microprocessor unit (MPU), or the like.
The memory 101 stores a computer program, and the processor 102 calls the computer program stored in the memory 101 to execute the thrust force measuring method according to any of the embodiments described above. The specific content of the method executed by the processor 102 may refer to the steps of the thrust measurement method, which is not described herein again.
Accordingly, the processor 102 calls the computer program stored in the memory 101, and may also be configured to execute the method steps executed by the first obtaining unit 110, the second obtaining unit 120, and the control unit 130 in the thrust measurement apparatus, which is not described herein again.
Embodiments of the present application further provide a computer-readable storage medium, where a computer program is stored in the computer-readable storage medium, and when the computer program runs on one or more processors, the thrust measurement method shown in any of the above embodiments may be implemented.
Embodiments of the present application further provide a computer program product, which when running on a processor, can implement the thrust measurement method shown in any of the above embodiments.
The foregoing detailed description of the embodiments of the present application has been presented to illustrate the principles and implementations of the present application and, therefore, the above description of the embodiments may be used to help understand the method and the core concepts of the present application.
Claims (10)
1. A thrust force measurement method, characterized by comprising:
acquiring identification points on a target to be detected, and forming a coordinate system based on the identification points;
acquiring the coordinates of the wafer on the target to be detected in the coordinate system;
and controlling a thrust probe to perform thrust measurement on the wafer based on the coordinates of the wafer.
2. The thrust force measurement method according to claim 1, wherein coordinates of a wafer on the object to be measured in the coordinate system are acquired; based on the coordinates of the wafer, controlling a thrust probe to perform thrust measurement on the wafer, specifically comprising:
acquiring the coordinates of a set number of wafers on the target to be detected in the coordinate system to obtain a set number of coordinates;
and controlling the thrust probe to perform thrust measurement on the set number of wafers based on the set number of coordinates corresponding to the set number of wafers.
3. The thrust force measuring method according to claim 2, wherein after controlling the thrust probe to perform thrust force measurement on a set number of wafers based on a set number of coordinates corresponding to the set number of wafers, further comprising:
acquiring the thrust values of a set number of wafers;
and forming a thrust value distribution curve by utilizing the thrust values of the set number of wafers and the set number of coordinates in a one-to-one correspondence manner, and carrying out thrust analysis by utilizing the thrust value distribution curve.
4. The thrust force measuring method according to claim 1, wherein after controlling the thrust probe to perform thrust force measurement on the wafer, the method further comprises:
and controlling the adsorption equipment to clear the wafer after the thrust measurement.
5. The thrust force measurement method according to claim 1, wherein the step of controlling a thrust probe to perform thrust force measurement on the wafer based on the coordinates of the wafer specifically comprises:
controlling a thrust probe to move to correspond to the wafer based on the coordinates of the wafer;
controlling a distance measuring device to measure the height of the wafer corresponding to the thrust probe;
controlling the contact area of the wafer and the thrust probe to be within a set range based on the height of the wafer;
and controlling the thrust probe to perform thrust measurement on the wafer under the condition that the contact area of the wafer and the thrust probe is in a set range.
6. The thrust force measurement method according to any one of claims 1 to 5, wherein before acquiring the identification point on the object to be measured, the method further comprises:
controlling the transportation device to move the target to be detected to a target position;
and under the condition that the target to be detected moves to the target position, controlling a fixing device to fix the target to be detected.
7. A thrust force measuring device, comprising: the device comprises a movable objective table, an image acquisition device, a movable platform, a thrust probe and a control system; the movable object stage is used for placing an object to be measured; the thrust probe is arranged on the moving platform;
the control system is configured to:
controlling the mobile object stage to move so that the mobile object stage drives the object to be measured to be positioned below a camera of the image acquisition equipment;
after the target to be detected is positioned below the camera of the image acquisition equipment, controlling the image acquisition equipment to acquire an image of the target to be detected;
after receiving the image from the image acquisition equipment, acquiring an identification point on the target to be detected based on the image, and forming a coordinate system based on the identification point;
acquiring the coordinates of the wafer on the target to be detected in the coordinate system based on the image;
based on the coordinates of the wafer, controlling the moving platform to drive the thrust probe to move to a corresponding position, or controlling the moving objective table to drive the target to be detected to move to a corresponding position; and controlling the thrust probe to perform thrust measurement on the wafer.
8. The thrust force measuring device of claim 7, further comprising an adsorption apparatus; the adsorption equipment comprises a vacuum pump, a hose and an adsorption hole arranged on the thrust probe; the vacuum pump is connected with the adsorption hole through the hose;
the control system is further configured to: and controlling the adsorption equipment to clear the wafer after the thrust measurement.
9. The thrust measuring device of claim 7, further comprising a transport device and a fixture device, said fixture device being disposed on said mobile platform;
the control system is further configured to: controlling the transportation device to move the target to be detected to a target position; and under the condition that the target to be detected moves to the target position, controlling a fixing device to fix the target to be detected.
10. The thrust force measuring device of any one of claims 7 to 9, further comprising a distance measuring device connected to the thrust probe;
the control system is used for controlling the thrust probe to carry out thrust measurement on the wafer based on the coordinate of the wafer, and specifically comprises:
controlling a thrust probe to move to correspond to the wafer based on the coordinates of the wafer;
controlling a distance measuring device to measure the height of the wafer corresponding to the thrust probe;
controlling the contact area of the wafer and the thrust probe to be within a set range based on the height of the wafer;
and controlling the thrust probe to perform thrust measurement on the wafer under the condition that the contact area of the wafer and the thrust probe is in a set range.
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