CN113351578A - Display module repairing method - Google Patents
Display module repairing method Download PDFInfo
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- CN113351578A CN113351578A CN202110623069.XA CN202110623069A CN113351578A CN 113351578 A CN113351578 A CN 113351578A CN 202110623069 A CN202110623069 A CN 202110623069A CN 113351578 A CN113351578 A CN 113351578A
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- chip
- display module
- substrate
- plasma
- working head
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 229910000679 solder Inorganic materials 0.000 claims abstract description 43
- 239000002313 adhesive film Substances 0.000 claims abstract description 42
- 238000001514 detection method Methods 0.000 claims abstract description 8
- 230000003287 optical effect Effects 0.000 claims abstract description 8
- 238000003466 welding Methods 0.000 claims abstract description 7
- 230000001502 supplementing effect Effects 0.000 claims abstract description 3
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000003825 pressing Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 230000008439 repair process Effects 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 6
- 238000003801 milling Methods 0.000 abstract description 4
- 239000003292 glue Substances 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 16
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- 239000013078 crystal Substances 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000013589 supplement Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention discloses a method for repairing a display module, wherein the display module comprises a substrate and a plurality of chips welded on the substrate, and a glue film is coated on the chips. The display module repairing method comprises the following steps: acquiring image information of a display module through an optical detection device to acquire the position of a fault chip on a substrate; providing a plasma generating device, wherein the plasma generating device is provided with a working head for outputting plasma, and the adhesive film on the periphery of the fault chip is removed by the plasma output by the working head; and removing the fault chip, and supplementing a new chip at the position of the fault chip. Because the gas reaction that plasma produced can not etch materials such as the pad on the base plate, can obtain better pad surface, do not have artifical/laser/milling cutter degumming mode and injure the pad by mistake, repair the crystalline substance welding of repairing and go up or the insufficient solder scheduling problem, repair the effect stable, reliable.
Description
Technical Field
The invention relates to the technical field of display module manufacturing, in particular to a method for repairing a display module.
Background
The Mini LED display module comprises a substrate and a plurality of chips welded on the substrate. In the production process of the Mini LED display module, a defective chip, such as a bad chip or a bad chip soldered to the display module, may exist due to defects generated by some processes, and the display module having the defective chip needs to be repaired.
For the display module fully coated with the adhesive film, during repair, the adhesive film on the periphery of the failed chip needs to be removed to expose the failed chip, and then the repair processes such as crystal removal, crystal supplement, welding, encapsulation and the like can be performed. At present, in order to avoid damaging a substrate bonding pad in the photoresist removing process, manual photoresist digging is mostly used, the problem that the photoresist repairing amount of a subsequent photoresist repairing process cannot be quantized due to inconsistent area of a photoresist digging region exists, and the photoresist removing efficiency is low. In addition, the photoresist is removed by adopting a milling cutter/laser, but due to the deformation of the substrate, the photoresist is removed in a milling cutter photoresist removing mode, so that the problems of inconsistent photoresist removal, no residual solder, damage to the surface layer of the substrate and the like caused by excessive photoresist removal exist; when the laser photoresist stripping method is adopted, carbide generated by the photoresist stripping remains on the surface of the substrate, which may result in that a newly repaired chip cannot be soldered.
Therefore, it is necessary to provide a new method for repairing a display module to solve the above problems.
Disclosure of Invention
The invention aims to provide a method for repairing a display module with stable and reliable repairing effect.
In order to achieve the purpose, the invention provides a method for repairing a display module, wherein the display module comprises a substrate and a plurality of chips welded on the substrate, and the chips are coated with adhesive films. The display module repairing method comprises the following steps: acquiring image information of the display module through an optical detection device to acquire the position of a fault chip on the substrate; providing a plasma generating device, wherein the plasma generating device is provided with a working head for outputting plasma, and the adhesive film on the periphery of the fault chip is removed through the plasma output by the working head; and removing the fault chip, and supplementing a new chip at the position of the fault chip.
Preferably, the step of removing the adhesive film around the faulty chip by the plasma output by the working head includes: moving the working head to a position right above the position of the fault chip; and enabling the working head to output plasma, and moving the working head towards the position of the fault chip until the adhesive film on the periphery of the fault chip is removed.
Preferably, the working head is vertically moved towards the position of the fault chip, after the adhesive film on the periphery of the fault chip is removed, the end surface of the residual adhesive film adjacent to the fault chip is a smooth surface vertical to the substrate.
Preferably, the working head is circular, and the diameter of the outlet end of the working head is 5 um-1 mm; or the working head is square, and the size of the outlet end of the working head is 5m 5 um-1 x 1 mm.
Preferably, the time of the plasma acting on the adhesive film around the fault chip is 1-20 mins.
Preferably, the gas for generating plasma is O2 and CF4, the flow ratio of O2 to CF4 is 5-20: 95-80, and the total gas flow is 50-250 sccm.
Preferably, the working pressure of the plasma generating device is set to be 300-350 mtorr, and the power is set to be 2-8 KW.
Specifically, after a new chip is added, the method further includes: and (5) coating an adhesive film on the periphery of the new chip.
Preferably, "removing the failed chip and adding a new chip at the position of the failed chip" includes: removing the failed chip; pressing the residual solder on the substrate after the fault chip is removed by using a pressing head, and heating the residual solder to level the welding surface of the residual solder; taking a new chip, aligning the electrode of the new chip to the corresponding solder area, and putting down the new chip; and melting the solder to ensure that the new chip is fixedly welded with the substrate.
More preferably, when the new chip is put down, a pressure is applied to the new chip toward the substrate.
Compared with the prior art, the method adopts the plasma to remove the adhesive film on the periphery of the fault chip, and because the gas generated by the plasma does not etch the bonding pad and other materials on the substrate, a better bonding pad surface can be obtained, and the problems of mistakenly damaging the bonding pad, repairing the non-crystal welding or insufficient welding and the like in a manual/laser/milling cutter photoresist removing mode do not exist. Finally, the repair effect of the invention is more stable and reliable.
Drawings
Fig. 1 a-1 g are schematic diagrams illustrating a module rework process according to an embodiment of the invention. Fig. 1a is a schematic diagram of a display module before repair, fig. 1b is a schematic diagram when a working head moves to a position right above a position of a fault chip, fig. 1c is a schematic diagram when the working head removes a peripheral adhesive film of the fault chip, fig. 1d is a schematic diagram of the display module after the peripheral adhesive film of the fault chip is removed, fig. 1e is a schematic diagram of the display module after the fault chip is removed, fig. 1f is a schematic diagram of the display module after a new chip is added, and fig. 1g is a schematic diagram of the display module after the adhesive film is added on the periphery of the new chip.
Fig. 2 a-2 g are schematic diagrams of a process of removing a failed chip and repairing a new chip according to an embodiment of the invention.
Fig. 2a is a schematic diagram of a failed chip soldered on a substrate, fig. 2b is a schematic diagram of a residual solder material after removing the failed chip and performing heating leveling, fig. 2c is a schematic diagram of the residual solder material in fig. 2b after leveling, fig. 2d is a schematic diagram of fig. 2c after adding a new solder material, fig. 2e is a schematic diagram of a new chip placed on fig. 2d, fig. 2f is a schematic diagram of the solder material in fig. 2e melted by a laser, and fig. 2g is a schematic diagram of the new chip soldered.
Detailed Description
For the purpose of illustrating the technical content and the structural features of the present invention in detail, the following description is further provided in conjunction with the embodiments and the accompanying drawings; like element numbers in the figures represent like elements. The repair method provided by the present invention is mainly suitable for repairing the display modules such as the Mini LED coated with the adhesive film, but not limited thereto.
In the description of the present invention, it should be understood that the terms "upper", "lower", "vertical", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of describing the present invention and simplifying the description, and thus, should not be construed as limiting the scope of the present invention.
Referring to fig. 1a to fig. 1g, the present embodiment discloses a method for repairing a display module, as shown in fig. 1a, the display module 100 includes a substrate 10 (PCB) and a plurality of chips soldered on the substrate 10, the plurality of chips are coated with an adhesive film 40, when the display module 100 has a failed chip 20 (as shown in fig. 1 b), for example, a bad chip, the repairing method of the present invention can be used to remove the failed chip 20 and replace with a new chip 30 (as shown in fig. 1f and fig. 1 g), so as to repair the display module 100. Specifically, the display module repairing method comprises the following steps:
image information of the display module 100 is collected by an optical detection device (not shown) to obtain the position of the faulty chip 20 on the substrate 10. The image information is an image of the display module 100 when each chip of the display module 100 is lit by a lighting tester (not shown), and when a certain chip is a bad chip or is in a bonding position offset or a cold joint on the substrate 10, the chip will appear as not bright or slightly bright in the image, at this time, the chip can be analyzed to be a faulty chip, and the position of the faulty chip 20 in the substrate 10 is calculated and obtained through the acquired image information. The Optical detection device is an AOI (automated Optical inspection) Optical automatic detection device, and how to implement position detection of the faulty chip 20 by using AOI is the prior art, and is not described herein again.
Providing a plasma generating device, wherein the plasma generating device has a working head 50 for outputting plasma, and the plasma outputted by the working head 50 removes the adhesive film around the faulty chip 20 (as shown in fig. 1c and 1 d). The working head 50 may be a film which is integrated with a high voltage electrode, a low voltage electrode, etc. to generate plasma, gas for generating plasma is input into the plasma generating device through an air inlet channel of the plasma generating device, and the gas passes through the working head 50 to generate plasma to act on the periphery of the fault chip 20. Of course, the working head 50 may be simply a plasma output structure, which is communicated with the plasma generating unit of the plasma generating device through a connecting structure such as a pipeline, and outputs the plasma generated by the plasma generating unit to act on the adhesive film around the faulty chip 20. The specific composition structure and operation principle of the plasma generator are the prior art, and are not described herein.
The faulty chip 20 is removed (as shown in fig. 1 e) and a new chip 30 is added to the location of the faulty chip 20 (as shown in fig. 1 f). Specifically, the faulty chip 20 may be peeled off from the substrate 10 using a cutter or the like, and then the faulty chip 20 may be removed using a suction nozzle or the like.
The adhesive film is applied to the periphery of the new chip 30 (as shown in fig. 1 g). Specifically, after the new chip 30 is supplemented, an image of a welding position of the new chip 30 and the substrate 10 is obtained through an optical detection device, so as to detect whether the new chip 30 is accurately welded with a corresponding pad on the substrate 10. If yes, a glue film is added on the periphery of the new chip 30; if not, the new chip 30 is welded with the corresponding bonding pad on the substrate 10 again until the new chip 30 and the corresponding bonding pad on the substrate 10 are accurately welded together, and then the adhesive film is coated on the periphery of the new chip 30.
The rework method of the present invention will be described in detail below with reference to fig. 1a to 1g and fig. 2a to 2g of the drawings.
In one embodiment, "removing the adhesive film around the faulty chip by the working head" includes: moving the working head 50 to a position right above the position of the faulty chip 20, as shown in fig. 1 b; then, the working head 50 is activated to make the working head 50 output plasma, and the working head 50 is moved toward the position of the faulty chip 20, as shown in fig. 1c, until the adhesive film around the faulty chip 20 is removed, as shown in fig. 1 d. In this embodiment, the working head 50 moves vertically towards the position of the faulty chip 20, and after the adhesive film on the periphery of the faulty chip 20 is removed, the end surface 41 of the remaining adhesive film adjacent to the faulty chip 20 is a smooth surface perpendicular to the substrate 10. Therefore, the adhesive film can be conveniently coated on the periphery of the new chip 30 in the subsequent process.
In some embodiments, a circular working head 50 is used, with an outlet end diameter of 5um to 1 mm. In other embodiments, the working head 50 is square with an outlet end dimension of 5 ANG 5um to 1 x 1 mm. Of course, the specific size and shape of the working head 50 used depends on the shape and size of the chips and the distribution of the chips on the display module 100, as long as the adhesive film around the faulty chip 20 can be completely removed and does not affect other chips.
Specifically, the time of the plasma acting on the adhesive film around the faulty chip 20 can be selected to be 1-20 mins, so that the adhesive film around the faulty chip 20 can be completely removed. The gas for generating plasma is O2 and CF4, the flow ratio of O2 to CF4 is 5-20: 95-80, and the total gas flow is 50-250 sccm. The working pressure of the plasma generating device is set to be 300-350 mtorr, and the power is set to be 2-8 KW. By the design, the adhesive film removing effect is better.
Preferably, the time of the plasma acting on the adhesive film around the faulty chip 20 is 8-12 mins, the working pressure of the plasma generator is 315-335 mtorr, the power is 4-6 KW, the flow ratio of O2 to CF4 is 10-15: 90-85, and the total gas flow is 130-180 sccm, so that a better adhesive film removing effect is obtained and the adhesive film removing efficiency is higher.
In an embodiment, "remove the failed chip and supplement a new chip at the location of the failed chip" specifically, a cutter is used to remove the failed chip 20; next, pressing the residual solder 71 of the substrate 10 after the faulty chip 20 is removed by using the pressing head 60, as shown in fig. 2b, and heating the residual solder 71 to level the bonding surface of the residual solder 71, wherein the leveled residual solder 71 is shown in fig. 2 c; next, new solder 72 (e.g., solder paste) is added to the leveled residual solder 71, as shown in fig. 2 d; then, a new chip 30 is taken by the suction nozzle 80, the new chip 30 is put down after the electrodes of the new chip 30 are respectively aligned with the corresponding solder areas (where the residual solders 71a and 71b are located), and a pressure is applied to the new chip 30 vertically toward the substrate 10; finally, the laser 90 is used to irradiate the solder to melt the solder so as to weld and fix the new chip 30 and the substrate 10, and after the solder is re-solidified, the new chip 30 is released.
Since the two electrodes 21, 22 of the failed chip 20 carry a variable amount of solder when the failed chip 20 is peeled off from the substrate 10 by the cutter, the heights of the residual solders 71a, 71b of the different electrodes 21, 22 of the failed chip 20 on the substrate 10 are different, and the bonding surface of the residual solder 71 is leveled by pressing the residual solder 71 on the residual solder 71 by the indenter 60 and heating the residual solder 71, so that the chip 30 to be newly bonded can be prevented from being tilted or shifted due to the uneven surface of the residual solder 71, and the repair effect can be ensured. Meanwhile, when the new chip 30 is put down, pressure towards the substrate 10 is applied to the new chip 30, so that the new chip 30 is prevented from inclining or position shifting due to tension difference of different solder areas in the solder melting process, and the repairing effect is more stable and reliable. Further, before the new chip is put down, new solder 72 is added to ensure that there is enough solder to solder-fix the electrodes 31, 32 of the new chip 30 to the pads 11 of the substrate 10.
As a preferred embodiment, the indenter 60 is a thermal pressing head having a heating unit, and when the indenter 60 is pressed against the residual solder 71, the residual solder 71 is flattened by heating the residual solder 71 by heating the indenter 60, without additionally heating the residual solder 71 by means of another mechanism.
In summary, the adhesive film around the failed chip 20 is removed by using the plasma in the present invention, since the gas generated by the plasma does not etch the pad 11 on the substrate 10, a better pad surface can be obtained, and the problems of accidentally damaging the pad 11, repairing the die-bonding failure or the cold joint in the manual/laser/milling-cutter photoresist removing manner do not exist. Finally, the repair effect of the invention is more stable and reliable.
The above disclosure is only a preferred embodiment of the present invention, and should not be taken as limiting the scope of the invention, so that the appended claims are intended to cover all such modifications and changes as fall within the true spirit of the invention.
Claims (10)
1. The display module comprises a substrate and a plurality of chips welded on the substrate, wherein the chips are coated with adhesive films, and the display module repairing method is characterized by comprising the following steps of:
acquiring image information of the display module through an optical detection device to acquire the position of a fault chip on the substrate;
providing a plasma generating device, wherein the plasma generating device is provided with a working head for outputting plasma, and the adhesive film on the periphery of the fault chip is removed through the plasma output by the working head;
and removing the fault chip, and supplementing a new chip at the position of the fault chip.
2. The method for repairing a display module as claimed in claim 1, wherein the removing the adhesive film around the faulty chip by the plasma output from the working head comprises:
moving the working head to a position right above the position of the fault chip;
and enabling the working head to output plasma, and moving the working head towards the position of the fault chip until the adhesive film on the periphery of the fault chip is removed.
3. The method for repairing a display module as claimed in claim 2, wherein the working head is moved vertically towards the location of the faulty chip, and after the adhesive film around the faulty chip is removed, the end surface of the remaining adhesive film adjacent to the faulty chip is a smooth surface perpendicular to the substrate.
4. The method of claim 2, wherein the working head is circular, and the diameter of the outlet end is 5um to 1 mm; or the working head is square, and the size of the outlet end of the working head is 5m 5 um-1 x 1 mm.
5. The method of any one of claims 1 to 4, wherein the plasma is applied to the adhesive film around the failed chip for 1-20 mins.
6. The method of claim 5, wherein the plasma generating gas is O2 and CF4, the flow ratio of O2 to CF4 is 5-20: 95-80, and the total gas flow is 50-250 sccm.
7. The method of claim 5, wherein the working pressure of the plasma generator is set to 300-350 mtorr and the power is set to 2-8 KW.
8. The method of repairing a display module of claim 1, further comprising, after repairing a new chip:
and (5) coating an adhesive film on the periphery of the new chip.
9. The method for repairing a display module as claimed in claim 1, wherein removing the failed chip and repairing a new chip at a location of the failed chip comprises:
removing the failed chip;
pressing the residual solder on the substrate after the fault chip is removed by using a pressing head, and heating the residual solder to level the welding surface of the residual solder;
taking a new chip, aligning the electrode of the new chip to the corresponding solder area, and putting down the new chip;
and melting the solder to ensure that the new chip is fixedly welded with the substrate.
10. The method of repairing a display module of claim 9, wherein a pressure is applied to the new chip toward the substrate while the new chip is being put down.
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CN202110623069.XA CN113351578A (en) | 2021-06-03 | 2021-06-03 | Display module repairing method |
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CN202110623069.XA CN113351578A (en) | 2021-06-03 | 2021-06-03 | Display module repairing method |
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Cited By (1)
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CN116230499A (en) * | 2023-05-11 | 2023-06-06 | 广东鸿浩半导体设备有限公司 | Positioning dry cleaning method after laser de-bonding based on micro-pliers |
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CN112735284A (en) * | 2020-12-30 | 2021-04-30 | 深圳市科伦特电子有限公司 | Micro LED module, Micro LED module production method and display |
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CN103578971A (en) * | 2013-10-18 | 2014-02-12 | 上海华力微电子有限公司 | Method for removing photoresist after high-energy ion implantation |
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Application publication date: 20210907 |