CN117727839A - Substrate dead pixel repairing method and device - Google Patents
Substrate dead pixel repairing method and device Download PDFInfo
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- CN117727839A CN117727839A CN202311514633.XA CN202311514633A CN117727839A CN 117727839 A CN117727839 A CN 117727839A CN 202311514633 A CN202311514633 A CN 202311514633A CN 117727839 A CN117727839 A CN 117727839A
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- adhesive film
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- 239000000758 substrate Substances 0.000 title claims abstract description 112
- 238000000034 method Methods 0.000 title claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 79
- 239000002184 metal Substances 0.000 claims abstract description 79
- 239000002313 adhesive film Substances 0.000 claims abstract description 72
- 229910000679 solder Inorganic materials 0.000 claims abstract description 44
- 230000002950 deficient Effects 0.000 claims abstract description 41
- 238000003466 welding Methods 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 12
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- 238000004528 spin coating Methods 0.000 claims description 5
- 230000008439 repair process Effects 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 13
- 239000003292 glue Substances 0.000 abstract description 11
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 230000001502 supplementing effect Effects 0.000 abstract description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012840 feeding operation Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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Abstract
The invention discloses a method and a device for repairing a defective pixel of a substrate, wherein the method comprises the following steps: performing lighting test on the chips on the substrate, removing bad chips, marking the positions of the bad chips, and obtaining a bad chip distribution image; preparing a temporary carrier plate, and covering an adhesive film on the temporary carrier plate; etching the adhesive film according to the bad chip distribution image to form a temporary carrier film on the temporary carrier plate; adhering a metal layer with preset thickness on the temporary carrier film; the temporary carrier plate is aligned and attached to the substrate, and a metal layer is supplemented on the mounting position corresponding to the bad chip through laser of a first preset wave band; and removing the temporary carrier film through laser of a second preset wave band. According to the repairing method, the temporary carrier film with the laser reaction glue is arranged, and the solder is adhered to the laser reaction glue to perform solder material supplementing on the vacant positions on the substrate, so that the welding stability of chip position supplementing is improved, and the overall reliability of the display module after dead pixel repairing is improved.
Description
Technical Field
The invention mainly relates to the technical field of display modules, in particular to a substrate defective pixel repairing method and a substrate defective pixel repairing device.
Background
After the bonding of the chip is completed by the conventional Micro LED full-color display module, the chip on the display module needs to be subjected to a lighting test, and for a bad chip which cannot be lighted and has an appearance defect, the bad chip needs to be removed by laser, and a new chip is complemented to a corresponding vacant position.
Because the welding and the removal of the chip cause loss to the metal solder, after the bad chip is removed by laser, the allowance of the metal solder on the formed vacant position is less, and when the chip is repaired subsequently, the welding stability of the chip and the substrate is insufficient, and the overall reliability of the display module after the bad point repair is reduced.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a method and a device for repairing a defective pixel of a substrate.
The invention provides a method for repairing a defective pixel of a substrate, which comprises the following steps:
performing lighting test on the chips on the substrate, removing bad chips, marking the positions of the bad chips, and obtaining a bad chip distribution image;
preparing a temporary carrier plate, and covering an adhesive film on the temporary carrier plate;
etching the adhesive film according to the bad chip distribution image to form a temporary carrier film on the temporary carrier plate;
adhering a metal layer with preset thickness on the temporary carrier film;
the temporary carrier plate is aligned and attached to the substrate, and a metal layer is supplemented on the mounting position corresponding to the bad chip through laser of a first preset wave band;
and removing the temporary carrier film through laser of a second preset wave band.
Further, the performing a lighting test on the chip on the substrate, removing the bad chip and marking the position of the bad chip, and obtaining the distribution image of the bad chip includes:
and carrying out appearance test and lighting test through the AOI equipment, judging the position of the bad chip, and outputting a bad chip distribution image aiming at the specific position of the bad chip.
Further, the repairing method further comprises the following steps:
the bad chip is removed by laser with a wavelength band between 248nm and 1064 nm.
Further, the preparing the temporary carrier plate, and covering the adhesive film on the temporary carrier plate includes:
spin coating and curing on the temporary carrier plate to form the adhesive film, wherein the thickness difference value of any two points on the adhesive film is delta h, and the range of the delta h is as follows: Δh is less than or equal to 3 μm:
further, the etching the adhesive film according to the bad chip distribution image, forming the temporary carrier film on the temporary carrier plate includes:
and forming a temporary carrier film through ICP etching, wherein the temporary carrier film comprises a plurality of adhesive film bosses.
Further, the size of the adhesive film boss is a, and the corresponding size of the bad chip is b;
the constraint relation between the a and the b is: a-b is less than or equal to 2 μm and less than or equal to 3 μm.
Furthermore, the adhesive film is made of gasified adhesive, and the light transmittance of the gasified adhesive is less than 5%.
Further, the adhering the metal layer with the preset thickness on the temporary carrier film comprises:
and carrying out hmds tackifying treatment on the adhesive film boss, and plating a metal layer on the adhesive film boss.
Further, the thickness of the metal layer is h1, the thickness of the residual solder at the poor chip welding position is h2, the thickness of the chip electrode is h3, and the constraint relation among h1, h2 and h3 is as follows: h3 is less than or equal to h1+h2 is less than or equal to 2h3.
Further, the thickness of the adhesive film is h4, the distance from the top surface of the chip to the surface of the substrate after bonding is h5, and the constraint relation among h1, h4 and h5 is as follows: h1+h4 > h5.
Further, the laser band of the first preset wave band is 980nm, or the laser band of the first preset wave is 1080nm.
Further, the second preset wave band is 355nm.
Further, the method for repairing the substrate dead pixel further comprises the following steps:
and realizing the secondary bonding of the chip and the substrate by a laser welding mode.
The invention also provides a device for repairing the defective pixel of the substrate, which is used for executing the repairing method and comprises the following steps: the device comprises a temporary carrier plate, a temporary carrier film positioned on the bottom surface of the temporary carrier plate and a metal layer arranged on the temporary carrier film;
the temporary carrier film is provided with a plurality of adhesive film bosses, and the adhesive film bosses form patterned array arrangement based on the substrate dead spots.
The invention provides a method and a device for repairing defective pixels of a substrate, wherein the method comprises the steps of setting a temporary carrier film with laser reaction glue, and carrying out solder material repairing on a vacant position on the substrate by attaching solder on the laser reaction glue, so that the welding stability of chip repairing positions is improved, and the overall reliability of a display module after defective pixels are repaired is improved.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings which are required in the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the description below are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flowchart of a method for repairing a defective pixel of a substrate according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a device for repairing a defective pixel of a substrate according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of repairing state of a bad spot welding material of a substrate in an embodiment of the invention;
fig. 4 is a schematic diagram of a repair process of a bad spot solder on a substrate in an embodiment of the invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Fig. 1 shows a flowchart of a method for repairing a substrate dead pixel in an embodiment of the present invention, where the method includes:
s11: and (3) performing a lighting test on the chip on the substrate, removing the bad chip, marking the position of the bad chip, and obtaining a bad chip distribution image.
The step of performing a lighting test on the chip on the substrate, removing the bad chip and marking the position of the bad chip, and the step of obtaining the distribution image of the bad chip comprises the following steps:
appearance test and lighting test are carried out through the AOI equipment, appearance images of the display module are obtained through the AOI equipment, image data of the display module when the display module is in lighting work are compared and analyzed with preset image data, distribution conditions of dead spots on a substrate of the display module are obtained, namely positions of bad chips are judged, and a bad chip distribution image is output aiming at specific positions of the bad chips.
Further, the AOI device is an optical automatic detector (Auto Optical Inspection), and the optical automatic detector compares whether the object to be detected meets the standard or not by utilizing an image technology to judge whether the object to be detected has an excessive difference from the standard image or not.
Specifically, the distribution positions of the bad chips on the display module substrate can be rapidly obtained through optical visual detection, and the positions of the bad chips on the display module substrate are determined based on the distribution positions of the bad chips on the display module substrate.
Specifically, the repairing method further comprises the following steps: the bad chip is removed through laser, and laser with a preset wave band acts on the welding part of the bad chip and the substrate, so that the solder on the bonding pad of the bad chip and the substrate is ablated, and the bad chip is separated from the substrate.
Further, the wave band of the laser is between 248nm and 1064nm, the wave band of the laser can be one of 248nm, 266nm, 355nm, 980nm, 1064nm and the like, different laser wave bands are selected according to the actual chip types to conduct pad ablation, the convenience of chip detachment can be improved, and meanwhile the risk of damage to the chip and the substrate is reduced.
S12: preparing a temporary carrier plate, and covering an adhesive film on the temporary carrier plate.
Specifically, the preparing the temporary carrier plate, covering the adhesive film on the temporary carrier plate includes:
spin coating and curing on the temporary carrier plate to form the adhesive film, clamping the temporary carrier plate on a spin coater, dripping a preset amount of laser reaction adhesive in the central area of the temporary carrier plate, rotating the temporary carrier plate at a high speed to enable the laser reaction adhesive to be uniformly coated on the temporary carrier plate, and curing to form the adhesive film.
Furthermore, the adhesive film is formed on the temporary carrier plate through a spin coating method, so that the adhesive film can be quickly prepared on the temporary carrier plate, and the consistency of the quality arrangement of the adhesive film is ensured, namely, the laser reaction adhesive can be uniformly arranged on the temporary carrier plate.
The thickness difference between any two points on the adhesive film is delta h, and the range of the delta h is as follows: and delta h is less than or equal to 3 mu m, namely the consistency of the thickness of the adhesive film is improved by a spin coating method, so that the surface of the adhesive film is flat, and the reliability of repairing the chip is ensured.
S13: and etching the adhesive film according to the bad chip distribution image to form a temporary carrier film on the temporary carrier plate.
Specifically, the adhesive film is etched according to the bad chip distribution image, a temporary carrier film is formed on the temporary carrier plate, the temporary carrier film is formed through ICP etching, and the temporary carrier film comprises a plurality of adhesive film bosses.
Further, the inductively coupled plasma ICP (Inductively coupled plasma) is etched by outputting the radio frequency generated by the ICP radio frequency power supply to the annular coupling coil under vacuum and low pressure, and generating high-density plasma by coupling discharge of a certain proportion of mixed etching gas.
Specifically, according to the distribution image of the bad chips, the corresponding distribution positions of the bad chips are displayed on the adhesive film of the temporary carrier plate, a plurality of adhesive film bosses are formed by etching the rest positions except the bad chips through ICP, and the plurality of adhesive film bosses are arranged in one-to-one correspondence with the positions of the plurality of bad chips.
Specifically, the size of the adhesive film boss is a, the size of the corresponding bad chip is b, and the constraint relation between a and b is as follows: the size of the adhesive film boss is less than or equal to 2 mu m and less than or equal to 3 mu m, namely the size of the adhesive film boss is slightly larger than the size of the bad chip, so that when the temporary carrier plate is oppositely attached to the base plate of the display module, the adhesive film boss is prevented from being deviated from the blank position of the base plate due to the opposite attaching error, and the stability of the adhesive film boss on the temporary carrier plate is ensured.
Furthermore, the adhesive film is made of gasified adhesive, and the gasified adhesive can be gasified and dissipated after reacting with laser of a preset wave band, so that the transfer of solder is realized.
Furthermore, the light transmittance of the gasified glue is less than 5%, so that laser directly acts on the glue film boss, the glue film boss can completely react with the laser, and the laser is prevented from penetrating the glue film boss to directly act on the display module substrate.
S14: and adhering a metal layer with a preset thickness on the temporary carrier film.
Specifically, adhering a metal layer with a preset thickness on the temporary carrier film comprises: and (3) performing hmds tackifying treatment on the adhesive film boss, and plating a metal layer on the adhesive film boss.
Further, the hexamethyldisilazane (Hexa methyl disilazane, hmds) treatment can increase the adhesion of the surface junction structure and the subsequent photoresist structure, and can improve the connection stability between the metal layer 3 and the adhesive film boss.
Specifically, the adhesive film boss is subjected to tackifying treatment, and a metal layer is deposited on the adhesive film boss subjected to the tackifying treatment in a vapor deposition mode, so that the adhesive film boss can be attached to a blank position of a substrate and the feeding operation of metal solder can be performed.
Specifically, the thickness of the metal layer is h1, the thickness of the residual solder at the poor chip welding position is h2, the thickness of the chip electrode is h3, and the constraint relation among h1, h2 and h3 is as follows: h3 is less than or equal to h1+h2 is less than or equal to 2h3, and the metal layer with preset thickness is arranged, so that after the metal layer is combined with residual solder at the vacant position on the display module substrate, sufficient metal solder can be ensured to be arranged in the vacant position on the substrate, and the chip can be welded and mounted.
Specifically, after the bad chip on the substrate of the display module is removed by laser, the thickness of the residual solder in the vacant position is measured by a laser focusing microscope, the thickness of the residual solder in the vacant position can be measured by a step instrument, and the evaporation thickness of the metal layer on the adhesive film boss can be calculated according to the thickness of the residual solder and the thickness of the chip electrode.
Further, in this embodiment, after the defective chip on the display module substrate is removed, the thickness h2 of the residual solder at the formed vacant position is between 0.5 μm and 1 μm, and the thickness h1 of the metal layer deposited on the adhesive film boss is between 2.5 μm and 3 μm.
Specifically, a metal layer is formed on the adhesive film boss by vapor deposition, and the material of the metal layer may be: one of metal solders such as aluminum Al, titanium Ti, platinum Pt, copper Au, silver Ag, nickel chromium alloy NiCr and the like, and the requirements of evaporation parameters of different solder materials are shown in table 1, and according to the different solder materials, the evaporation rate in evaporation is adjusted so as to deposit and form the metal layer on the adhesive film boss.
TABLE 1
Further, A is the thickness unit of Emeter, and the evaporation rate of 4A/s means that the solder material can deposit a metal layer with the thickness of 4 Emeter per second on the adhesive film.
Specifically, the thickness of the adhesive film is h4, the distance from the top surface of the chip to the surface of the substrate after bonding is h5, and the constraint relation among h1, h4 and h5 is as follows: when the temporary carrier plate is attached to the substrate of the display module, the thickness of the bonding of the adhesive film boss and the metal layer is larger than the height of the chip on the substrate of the display module, so that the temporary carrier plate is prevented from being in direct contact with the chip of the display module, and the damage risk of the chip of the display module is reduced.
S15: and (3) aligning and attaching the temporary carrier plate on the substrate, and supplementing a metal layer on the mounting position corresponding to the bad chip through laser of a first preset wave band.
Specifically, the laser wave band of the first preset wave band can be 980nm, the laser wave band of the first preset wave band can also be 1080nm, the temporary carrier plate pair is attached to the substrate of the display module assembly, a plurality of adhesive film bosses are correspondingly inserted in the vacant positions of the substrate of the display module assembly, laser in a high wave band penetrates through the adhesive film bosses, so that the laser can directly act on the metal layer, and the metal layer of the adhesive film bosses can be melted and combined with residual metal solder in the vacant positions.
Further, by setting the laser of the high wave band, the reaction of the temporary carrier film on the temporary carrier plate and the laser of the first preset wave band can be avoided, the laser of the first preset wave band can penetrate through the temporary carrier film, and the laser has larger energy to react with the metal layer on the temporary carrier film, so that the metal layer can be melted in the residual solder at the vacant position.
S16: and removing the temporary carrier film through laser of a second preset wave band.
Specifically, the second preset wave band is 355nm, namely, the laser with the wave band of 355nm acts on the temporary carrier film of the temporary carrier plate, the temporary carrier film can react with the laser with the wave band of 355nm and is gasified and dissipated under the action of the laser, the separation of the metal layer, the temporary carrier plate and the temporary carrier film is realized, the transfer of the metal layer is completed, the metal solder at the vacant position of the display module is repaired, and the metal solder in the vacant position on the substrate of the display module can meet the welding and attaching requirements of chips.
Specifically, the method for repairing the substrate dead pixel further comprises the following steps: and realizing the secondary bonding of the chip and the substrate by a laser welding mode. And bonding new chips on the transfer substrate corresponding to the distribution positions of the bad chips according to the distribution images of the bad chips, and bonding the transfer substrate and the substrate of the display module to each other, so that a plurality of new chips are correspondingly bonded on the vacant positions of the substrate of the display module, electrode pads of the chips are connected with metal solders on the vacant positions, and laser action of a third preset wave band is performed on the connection positions of the new chips and the metal solders on the vacant positions, so that the electrode pads of the new chips are welded on the vacant positions of the substrate of the display module based on the metal solders.
Further, the third preset wavelength band is between 980nm and 1064nm, and in this embodiment, the third preset wavelength band is preferably 980nm and 1064nm, that is, is consistent with the laser of the first preset wavelength band, so as to improve the convenience of equipment debugging.
Further, by selecting the metal solder with high-band laser acting in the vacant position, the metal solder can be melted and welded and fixed with the electrode pad of the new chip.
The embodiment of the invention provides a method for repairing defective pixels of a substrate, which comprises the steps of preparing and etching a temporary carrier film corresponding to a defective chip distribution image on a temporary carrier plate according to the defective chip distribution image on the display module substrate, and repairing metal solder at a vacant position on the display module substrate by depositing a metal layer on the carrier film so as to ensure the welding connection stability of a new chip and the substrate during secondary bonding.
Embodiment two:
fig. 2 shows a schematic structural diagram of a repairing device for a substrate defective spot according to an embodiment of the present invention, and fig. 3 shows a schematic repairing state of a substrate defective spot welding material according to an embodiment of the present invention, where the repairing device is configured to execute the repairing method, and includes: the device comprises a temporary carrier plate 1, a temporary carrier film 2 positioned on the bottom surface of the temporary carrier plate 1 and a metal layer 3 arranged on the temporary carrier film 2; the temporary carrier film 2 on the temporary carrier plate 1 is used for carrying the metal layer 3, and the metal layer 3 on the temporary carrier film 2 can be attached to the vacant position of the display module substrate 4 through the temporary carrier plate 1, so that the metal layer 3 of the temporary carrier film 2 is connected with the residual metal solder 41 on the vacant position.
Further, the metal layer 3 is formed on the temporary carrier film 2 of the temporary carrier plate 1 by deposition, corresponding metal materials are selected according to the material of the residual metal solder 41 at the vacant position of the substrate 4 of the display module, and the metal deposition rate is adjusted according to the metal materials, so that the metal solder is deposited on the temporary carrier film 2 to form the metal layer 3.
Specifically, the temporary carrier film 2 is provided with a plurality of adhesive film bosses, and the plurality of adhesive film bosses form patterned array arrangement based on the dead spots of the substrate 4, that is, the plurality of adhesive film bosses can be correspondingly attached to the positions of the display module substrate 4 corresponding to the dead spots, so that the metal layer 3 on the adhesive film bosses can be connected with the residual metal solder 41 at the vacant positions on the display module substrate 4.
Specifically, fig. 4 shows a schematic diagram of a repairing process of a bad spot welding material of a substrate in an embodiment of the present invention, where the temporary carrier plate 1 is attached to the substrate 4 of the display module, so that the temporary carrier film 2 on the temporary carrier plate 1 is attached to a vacant position of the substrate 4, and the metal layer 3 on the temporary carrier film 2 may be attached to a metal solder at the vacant position.
Further, the laser with the wave band of 1080nm acts on the metal layer 3 of the temporary carrier plate 1, so that the metal layer 3 can be fused and combined with the residual solder at the vacant position of the substrate 4, the laser with the high wave band acts on the metal layer 3, the metal layer 3 is heated and fused, and the fused metal material is combined with the residual metal solder 41 of the substrate 4, so that the repair and the material supplement of the residual metal solder 41 at the vacant position of the substrate 4 are realized.
Specifically, after the metal layer 3 is fused and combined at the vacant position of the substrate 4, laser with a wavelength band of 355nm acts on the temporary carrier film 2, so that the temporary carrier film 2 reacts with the laser, and separation between the metal layer 3 and the temporary carrier plate 1 is realized.
Furthermore, the temporary carrier film 2 on the temporary carrier plate 1 may be made of a gasified glue material, and the gasified glue material may react with laser with a wavelength band of 355nm and be gasified and dissipated under the action of the laser, so that the metal layer 3 may be disconnected from the temporary carrier film 2, thereby realizing the transfer of the metal layer 3.
Furthermore, by arranging the temporary carrier film 2 made of gasified glue, the influence on adjacent chips on the substrate 4 in the process of the reaction between the temporary carrier film 2 and laser can be avoided, so that the reliability of repairing the bad points of the substrate 4 is improved.
Specifically, the repairing device further comprises a transferring substrate, the transferring substrate is provided with a plurality of chips according to the defective pixel arrangement image on the display module substrate 4, the plurality of chips correspond to the defective pixel arrangement, the chips on the transferring substrate are attached to the corresponding defective pixel positions through the transferring substrate and the display module substrate 4, and the transfer of the chips is realized through a laser transfer mode.
Further, the laser with the wavelength band of 1080nm acts on the metal solder at the dead spot position of the display module substrate 4, so that the solder metal at the dead spot position is melted and welded and fixed with the chip electrode pad of the transfer substrate, and the welding and fixing of the chip and the display module substrate 4 are realized.
Further, the connection between the chip and the transfer substrate is stripped by laser, so that the chip is separated from the transfer substrate, and the laser transfer operation of the chip is completed.
The embodiment of the invention provides a substrate defective pixel repairing device, which is characterized in that a metal layer is arranged on a temporary carrier film of a temporary carrier plate, the patterned temporary carrier film corresponds to a substrate defective pixel, a metal layer is formed on the temporary carrier film by deposition, and metal solder at the defective pixel position on a display module substrate is repaired, so that the welding connection stability of a new chip and the substrate in secondary bonding is ensured.
In addition, the foregoing describes in detail a method and an apparatus for repairing a defective pixel on a substrate provided by the embodiments of the present invention, and specific examples should be adopted to illustrate the principles and embodiments of the present invention, where the foregoing description of the embodiments is only for helping to understand the method and core ideas of the present invention; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.
Claims (14)
1. The method for repairing the defective pixel of the substrate is characterized by comprising the following steps of:
performing lighting test on the chips on the substrate, removing bad chips, marking the positions of the bad chips, and obtaining a bad chip distribution image;
preparing a temporary carrier plate, and covering an adhesive film on the temporary carrier plate;
etching the adhesive film according to the bad chip distribution image to form a temporary carrier film on the temporary carrier plate;
adhering a metal layer with preset thickness on the temporary carrier film;
the temporary carrier plate is aligned and attached to the substrate, and a metal layer is supplemented on the mounting position corresponding to the bad chip through laser of a first preset wave band;
and removing the temporary carrier film through laser of a second preset wave band.
2. The method for repairing a defective pixel of a substrate according to claim 1, wherein the performing a lighting test on the chip on the substrate, removing the defective chip and marking the defective chip position, and obtaining the defective chip distribution image comprises:
and carrying out appearance test and lighting test through the AOI equipment, judging the position of the bad chip, and outputting a bad chip distribution image aiming at the specific position of the bad chip.
3. The repair method for a defective pixel of a substrate according to claim 1, further comprising:
the bad chip is removed by laser with a wavelength band between 248nm and 1064 nm.
4. The method for repairing a defective pixel of a substrate according to claim 1, wherein preparing the temporary carrier, and covering the temporary carrier with the adhesive film comprises:
spin-coating and curing on the temporary carrier plate to form the adhesive film, wherein the thickness difference value of any two points on the adhesive film is delta h, and the range of the delta h is as follows: Δh is less than or equal to 3 μm.
5. The method for repairing a defective pixel of a substrate according to claim 1, wherein etching the adhesive film according to the bad chip distribution image, forming a temporary carrier film on the temporary carrier plate comprises:
and forming a temporary carrier film through ICP etching, wherein the temporary carrier film comprises a plurality of adhesive film bosses.
6. The method for repairing a defective pixel of a substrate according to claim 5, wherein the size of the adhesive film boss is a, and the size of the corresponding defective chip is b;
the constraint relation between the a and the b is: a-b is less than or equal to 2 μm and less than or equal to 3 μm.
7. The method for repairing a defective pixel of a substrate according to claim 4, wherein the adhesive film is made of a gasified adhesive, and the light transmittance of the gasified adhesive is less than 5%.
8. The method for repairing a defective pixel of a substrate according to claim 5, wherein the adhering a metal layer of a predetermined thickness on the temporary carrier film comprises:
and carrying out hmds tackifying treatment on the adhesive film boss, and plating a metal layer on the adhesive film boss.
9. The method for repairing a defective pixel of a substrate according to claim 8, wherein the thickness of the metal layer is h1, the thickness of the residual solder at the defective die bonding site is h2, the thickness of the die electrode is h3, and the constraint relationship among h1, h2 and h3 is: h3 is less than or equal to h1+h2 is less than or equal to 2h3.
10. The method for repairing defective pixels on a substrate according to claim 9, wherein the thickness of the adhesive film is h4, the distance from the top surface of the bonded chip to the surface of the substrate is h5, and the constraint relationship among h1, h4 and h5 is: h1+h4 > h5.
11. The method for repairing a defective pixel of a substrate according to claim 1, wherein the laser band of the first preset band is 980nm or 1080nm.
12. The method for repairing a defective pixel of a substrate according to claim 1, wherein the second predetermined wavelength band is 355nm.
13. The method for repairing a defective pixel of a substrate according to claim 1, further comprising:
and realizing the secondary bonding of the chip and the substrate by a laser welding mode.
14. A substrate dead pixel repairing apparatus, wherein the repairing apparatus is configured to perform the repairing method according to any one of claims 1 to 13, and comprises: the device comprises a temporary carrier plate, a temporary carrier film positioned on the bottom surface of the temporary carrier plate and a metal layer arranged on the temporary carrier film;
the temporary carrier film is provided with a plurality of adhesive film bosses, and the adhesive film bosses form patterned array arrangement based on the substrate dead spots.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311514633.XA CN117727839A (en) | 2023-11-14 | 2023-11-14 | Substrate dead pixel repairing method and device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311514633.XA CN117727839A (en) | 2023-11-14 | 2023-11-14 | Substrate dead pixel repairing method and device |
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| CN117727839A true CN117727839A (en) | 2024-03-19 |
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| CN202311514633.XA Pending CN117727839A (en) | 2023-11-14 | 2023-11-14 | Substrate dead pixel repairing method and device |
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| CN (1) | CN117727839A (en) |
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- 2023-11-14 CN CN202311514633.XA patent/CN117727839A/en active Pending
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