CN113348539A - Film-like adhesive, adhesive sheet, and semiconductor device and method for manufacturing the same - Google Patents
Film-like adhesive, adhesive sheet, and semiconductor device and method for manufacturing the same Download PDFInfo
- Publication number
- CN113348539A CN113348539A CN202080011016.6A CN202080011016A CN113348539A CN 113348539 A CN113348539 A CN 113348539A CN 202080011016 A CN202080011016 A CN 202080011016A CN 113348539 A CN113348539 A CN 113348539A
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- Prior art keywords
- adhesive
- film
- semiconductor element
- semiconductor
- semiconductor device
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- 239000000853 adhesive Substances 0.000 title claims abstract description 190
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 190
- 239000004065 semiconductor Substances 0.000 title claims abstract description 156
- 238000000034 method Methods 0.000 title claims description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 26
- 229920005989 resin Polymers 0.000 claims abstract description 25
- 239000011347 resin Substances 0.000 claims abstract description 25
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims description 21
- -1 siloxane structure Chemical group 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 20
- 238000005520 cutting process Methods 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 7
- 229920001971 elastomer Polymers 0.000 claims description 6
- 239000000806 elastomer Substances 0.000 claims description 5
- 239000011230 binding agent Substances 0.000 abstract description 23
- 239000010408 film Substances 0.000 description 37
- 239000003822 epoxy resin Substances 0.000 description 32
- 229920000647 polyepoxide Polymers 0.000 description 32
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 29
- 229910001431 copper ion Inorganic materials 0.000 description 29
- 238000001723 curing Methods 0.000 description 20
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 15
- 238000007789 sealing Methods 0.000 description 15
- 239000000203 mixture Substances 0.000 description 14
- 239000005011 phenolic resin Substances 0.000 description 13
- 239000002966 varnish Substances 0.000 description 12
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 11
- 239000010410 layer Substances 0.000 description 11
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 10
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 10
- 229920003986 novolac Polymers 0.000 description 10
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 9
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229920000800 acrylic rubber Polymers 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 229920000058 polyacrylate Polymers 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000000470 constituent Substances 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 6
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 6
- 125000003700 epoxy group Chemical group 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 125000000524 functional group Chemical group 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 4
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 4
- 229910000365 copper sulfate Inorganic materials 0.000 description 4
- 239000007822 coupling agent Substances 0.000 description 4
- 239000013039 cover film Substances 0.000 description 4
- 229930003836 cresol Natural products 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000011256 inorganic filler Substances 0.000 description 4
- 229910003475 inorganic filler Inorganic materials 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000035515 penetration Effects 0.000 description 4
- 229920001568 phenolic resin Polymers 0.000 description 4
- 239000002985 plastic film Substances 0.000 description 4
- 229920006255 plastic film Polymers 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 239000003566 sealing material Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 239000004721 Polyphenylene oxide Substances 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000002313 adhesive film Substances 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 238000010348 incorporation Methods 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 150000002989 phenols Chemical class 0.000 description 3
- 229920000570 polyether Polymers 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 2
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 2
- BVYPJEBKDLFIDL-UHFFFAOYSA-N 3-(2-phenylimidazol-1-yl)propanenitrile Chemical compound N#CCCN1C=CN=C1C1=CC=CC=C1 BVYPJEBKDLFIDL-UHFFFAOYSA-N 0.000 description 2
- LVNLBBGBASVLLI-UHFFFAOYSA-N 3-triethoxysilylpropylurea Chemical compound CCO[Si](OCC)(OCC)CCCNC(N)=O LVNLBBGBASVLLI-UHFFFAOYSA-N 0.000 description 2
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 241001050985 Disco Species 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- 230000001476 alcoholic effect Effects 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000002788 crimping Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- NXPPAOGUKPJVDI-UHFFFAOYSA-N naphthalene-1,2-diol Chemical compound C1=CC=CC2=C(O)C(O)=CC=C21 NXPPAOGUKPJVDI-UHFFFAOYSA-N 0.000 description 2
- 150000004780 naphthols Chemical class 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229920000306 polymethylpentene Polymers 0.000 description 2
- 239000011116 polymethylpentene Substances 0.000 description 2
- 238000011417 postcuring Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 229960001755 resorcinol Drugs 0.000 description 2
- 229910052938 sodium sulfate Inorganic materials 0.000 description 2
- 235000011152 sodium sulphate Nutrition 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- MODAACUAXYPNJH-UHFFFAOYSA-N 1-(methoxymethyl)-4-[4-(methoxymethyl)phenyl]benzene Chemical group C1=CC(COC)=CC=C1C1=CC=C(COC)C=C1 MODAACUAXYPNJH-UHFFFAOYSA-N 0.000 description 1
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 1
- BLBVJHVRECUXKP-UHFFFAOYSA-N 2,3-dimethoxy-1,4-dimethylbenzene Chemical group COC1=C(C)C=CC(C)=C1OC BLBVJHVRECUXKP-UHFFFAOYSA-N 0.000 description 1
- CQOZJDNCADWEKH-UHFFFAOYSA-N 2-[3,3-bis(2-hydroxyphenyl)propyl]phenol Chemical compound OC1=CC=CC=C1CCC(C=1C(=CC=CC=1)O)C1=CC=CC=C1O CQOZJDNCADWEKH-UHFFFAOYSA-N 0.000 description 1
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- SESYNEDUKZDRJL-UHFFFAOYSA-N 3-(2-methylimidazol-1-yl)propanenitrile Chemical compound CC1=NC=CN1CCC#N SESYNEDUKZDRJL-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- 229920002126 Acrylic acid copolymer Polymers 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
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- 229910000831 Steel Inorganic materials 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 1
- 125000003172 aldehyde group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
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- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 238000007611 bar coating method Methods 0.000 description 1
- LLEMOWNGBBNAJR-UHFFFAOYSA-N biphenyl-2-ol Chemical compound OC1=CC=CC=C1C1=CC=CC=C1 LLEMOWNGBBNAJR-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
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- 238000011109 contamination Methods 0.000 description 1
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
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- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
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- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
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- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
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- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
- 125000005487 naphthalate group Chemical group 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- 239000004745 nonwoven fabric Substances 0.000 description 1
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- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
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- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
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- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 125000006839 xylylene group Chemical group 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/35—Heat-activated
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The invention discloses a film-shaped adhesive for bonding a semiconductor element and a supporting member on which the semiconductor element is mounted. The film-like binder contains a thermosetting resin component and a leveling agent.
Description
Technical Field
The invention relates to a film-like adhesive, an adhesive sheet, a semiconductor device and a method for manufacturing the same.
Background
In recent years, a stacked MCP (Multi Chip Package) in which semiconductor elements (semiconductor chips) are stacked in a plurality of layers has become widespread, and is mounted as a memory semiconductor Package for a mobile phone, a portable audio device, or the like. With the increase in the number of functions of mobile phones and the like, semiconductor packages are also being increased in speed, density, integration, and the like. In addition, the use of copper as a wiring material for a circuit of a semiconductor chip enables high-speed operation. In addition, from the viewpoint of improving the reliability of connection with a complicated mounting substrate and promoting heat dissipation from a semiconductor package, lead frames made of copper have been used.
However, since a coating material for securing insulation of a circuit surface also tends to be simplified from the viewpoint of copper having characteristics of being easily corroded and cost reduction, it tends to be difficult to secure electrical characteristics of a semiconductor package. In particular, in a semiconductor package in which a plurality of semiconductor chips are stacked, copper ions generated by corrosion tend to migrate inside the adhesive, and thus electrical signals tend to be easily lost in the semiconductor chips or between the semiconductor chips and the semiconductor chips.
In addition, from the viewpoint of high functionality, semiconductor elements are often connected to a complicated mounting board, and a lead frame made of copper tends to be preferred in order to improve connection reliability. Even in this case, there is a case where loss of an electric signal due to copper ions generated from the lead frame becomes a problem.
In addition, in a semiconductor package using a member made of copper, there is a high possibility that copper ions are generated from the member to cause an electrical failure, and sufficient HAST resistance may not be obtained.
In view of preventing the loss of electrical signals, etc., studies have been made on binders that trap copper ions generated in semiconductor packages. For example, patent document 1 discloses an adhesive sheet for manufacturing a semiconductor device, which comprises a thermoplastic resin having an epoxy group and no carboxyl group, and an organic complex-forming compound having a heterocyclic compound containing a tertiary nitrogen atom in a ring atom and forming a complex with a cation.
Prior art documents
Patent document
Patent document 1: japanese patent laid-open publication No. 2013-026566
Disclosure of Invention
Technical problem to be solved by the invention
However, the conventional binders are not sufficient in suppressing the problems associated with the movement of copper ions in the binders, and there is still room for improvement.
Accordingly, a main object of the present invention is to provide a film-like adhesive that can sufficiently suppress a failure accompanying migration of copper ions in the adhesive.
Means for solving the technical problem
The present inventors have conducted extensive studies and, as a result, have found that the use of a leveling agent can sufficiently suppress the defects accompanying the movement of copper ions in the binder, thereby completing the present invention.
One aspect of the present invention provides a film-like adhesive for bonding a semiconductor element and a support member on which the semiconductor element is mounted, the film-like adhesive containing a thermosetting resin component and a leveling agent.
The reason why the movement of copper ions in the binder can be sufficiently suppressed by using the leveling agent is not necessarily clear, but the inventors of the present invention considered that this is because the incorporation of copper ions into the binder surface layer can be suppressed by interposing the leveling agent in the binder surface layer.
The leveling agent may be a compound having a siloxane structure.
The thermosetting resin component may include a thermosetting resin, a curing agent, and an acrylic rubber.
The thickness of the film-like adhesive may be 50 μm or less.
Another aspect of the present invention provides an adhesive sheet including: a substrate; and the film-like adhesive provided on one surface of the substrate. The substrate may be a dicing tape.
Another aspect of the present invention provides a semiconductor device including: a semiconductor element; a support member on which a semiconductor element is mounted; and an adhesive member which is provided between the semiconductor element and the supporting member and bonds the semiconductor element and the supporting member, and which is a cured product of the film-like adhesive. The support member may comprise a member having copper as a material.
Another aspect of the present invention provides a method for manufacturing a semiconductor device, including the step of bonding a semiconductor element and a supporting member using the film-like adhesive.
Another aspect of the present invention provides a method for manufacturing a semiconductor device, including: attaching the film-like adhesive of the adhesive sheet to a semiconductor wafer; a step of cutting the semiconductor wafer to which the film-like adhesive is attached to produce a plurality of singulated semiconductor elements with the film-like adhesive; and a step of bonding the semiconductor element with the film-like adhesive to the support member. The method of manufacturing a semiconductor device may further include a step of heating the semiconductor element with the film-like adhesive bonded to the support member using a reflow furnace.
Effects of the invention
According to the present invention, a film-like adhesive that can sufficiently suppress a failure accompanying the movement of copper ions in the adhesive can be provided. Further, according to the present invention, an adhesive sheet and a semiconductor device using such a film-like adhesive can be provided. Further, according to the present invention, a method for manufacturing a semiconductor device using a film-like adhesive or an adhesive sheet can be provided.
Drawings
Fig. 1 is a schematic cross-sectional view showing one embodiment of a film-like adhesive.
Fig. 2 is a schematic cross-sectional view showing one embodiment of the adhesive sheet.
Fig. 3 is a schematic cross-sectional view showing another embodiment of the adhesive sheet.
Fig. 4 is a schematic cross-sectional view showing another embodiment of the adhesive sheet.
Fig. 5 is a schematic cross-sectional view showing another embodiment of the adhesive sheet.
Fig. 6 is a schematic cross-sectional view showing one embodiment of a semiconductor device.
Fig. 7 is a schematic cross-sectional view showing another embodiment of the semiconductor device.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings as appropriate. However, the present invention is not limited to the following embodiments. In the following embodiments, unless otherwise explicitly stated, constituent elements (including steps and the like) thereof are not essential. The sizes of the components in the drawings are conceptual sizes, and the relative relationship between the sizes of the components is not limited to the relationship shown in the drawings.
The same applies to numerical values and ranges thereof in the present specification, and the present invention is not limited thereto. In the present specification, a numerical range represented by "to" means a range in which numerical values before and after "to" are included as a minimum value and a maximum value, respectively. In the numerical ranges recited in the present specification, an upper limit or a lower limit recited in one numerical range may be replaced with an upper limit or a lower limit recited in another numerical range recited in a stepwise manner. In the numerical ranges described in the present specification, the upper limit or the lower limit of the numerical range may be replaced with the values shown in the examples.
In the present specification, (meth) acrylate means acrylate or methacrylate corresponding thereto. The same applies to other similar expressions such as (meth) acryloyl group and (meth) acrylic acid copolymer.
The film-like adhesive according to one embodiment is a film-like adhesive for bonding a semiconductor element and a support member on which the semiconductor element is mounted, and the film-like adhesive contains a thermosetting resin component and a leveling agent.
The film-shaped adhesive can be obtained by molding an adhesive composition containing (a) a thermosetting resin component and (B) a leveling agent into a film shape. The film-like adhesive and the adhesive composition may be those which are in a semi-cured (B-stage) state and which are capable of being in a fully cured (C-stage) state after curing treatment.
In one embodiment, (a) the thermosetting resin component may be a substance containing (a1) a thermosetting resin, (a2) a curing agent, and (A3) an elastomer.
(A1) The components: thermosetting resin
From the viewpoint of adhesiveness (adhesiveness), the component (a1) may be an epoxy resin. The epoxy resin can be used without any particular limitation as long as it has an epoxy group in the molecule. Examples of the epoxy resin include bisphenol a type epoxy resins, bisphenol F type epoxy resins, bisphenol S type epoxy resins, phenol novolac type epoxy resins, cresol novolac type epoxy resins, bisphenol a novolac type epoxy resins, bisphenol F novolac type epoxy resins, stilbene type epoxy resins, triazine skeleton-containing epoxy resins, fluorene skeleton-containing epoxy resins, triphenol methane type epoxy resins, biphenyl type epoxy resins, xylylene type epoxy resins, biphenyl aralkyl type epoxy resins, naphthalene type epoxy resins, polyfunctional phenols, polycyclic aromatic diglycidyl ether compounds such as anthracene, and the like. These may be used alone or in combination of two or more. Among them, the component (a1) may be a cresol novolac type epoxy resin, a phenol novolac type epoxy resin, a bisphenol F type epoxy resin, or a bisphenol a type epoxy resin from the viewpoint of the tackiness, flexibility, and the like of the film.
The epoxy equivalent of the epoxy resin is not particularly limited, and may be 90 to 300g/eq or 110 to 290 g/eq. When the epoxy equivalent of the epoxy resin is within these ranges, the bulk strength (bulk strength) of the film-like adhesive tends to be maintained and the fluidity tends to be ensured.
(A2) The components: curing agent
(A2) The component (b) may be a phenolic resin capable of acting as a curing agent for the epoxy resin. The phenol resin can be used without any particular limitation as long as it has a phenolic hydroxyl group in the molecule. Examples of the phenol resin include a novolak-type phenol resin obtained by condensing or co-condensing phenols such as phenol, cresol, resorcinol (resorcin), catechol, bisphenol a, bisphenol F, phenylphenol, and aminophenol and/or naphthols such as α -naphthol, β -naphthol, and dihydroxynaphthalene with a compound having an aldehyde group such as formaldehyde in the presence of an acidic catalyst; phenol aralkyl resins and naphthol aralkyl resins synthesized from phenols such as allylated bisphenol a, allylated bisphenol F, allylated naphthalene diol, phenol novolac and phenol and/or naphthols and dimethoxyp-xylene or bis (methoxymethyl) biphenyl. These may be used alone or in combination of two or more. Among them, the phenol resin may be a phenol novolac type phenol resin or a naphthol aralkyl resin.
The hydroxyl equivalent weight of the phenolic resin can be more than 70g/eq or between 70g/eq and 300 g/eq. When the hydroxyl equivalent weight of the phenolic resin is 70g/eq or more, the storage modulus of the film tends to be further improved, and when the hydroxyl equivalent weight of the phenolic resin is 300g/eq or less, problems due to the generation of bubbles, outgas, and the like can be prevented.
From the viewpoint of curability, the ratio of the epoxy equivalent of the epoxy resin to the hydroxyl equivalent of the phenol resin (epoxy equivalent of the epoxy resin/hydroxyl equivalent of the phenol resin) may be 0.30/0.70 to 0.70/0.30, 0.35/0.65 to 0.65/0.35, 0.40/0.60 to 0.60/0.40, or 0.45/0.55 to 0.55/0.45. When the equivalent ratio is 0.30/0.70 or more, more sufficient curability tends to be obtained. When the equivalent ratio is 0.70/0.30 or less, the viscosity can be prevented from becoming too high, and more sufficient fluidity can be obtained.
The total content of the component (a1) and the component (a2) may be 5 to 50 parts by mass, 10 to 40 parts by mass, or 15 to 30 parts by mass, relative to 100 parts by mass of the total mass of the component (a). When the total content of the component (a1) and the component (a2) is 5 parts by mass or more, the elastic modulus tends to be increased by crosslinking. When the total content of the component (a1) and the component (a2) is 50 parts by mass or less, the film workability tends to be maintained.
(A3) The components: elastic body
(A3) The component (b) may be an acrylic rubber having a constituent unit derived from a (meth) acrylate ester as a main component. The content of the constituent unit derived from a (meth) acrylate ester in the component (a3) may be, for example, 70 mass% or more, 80 mass% or more, or 90 mass% or more, based on the total amount of the constituent units. The acrylic rubber may contain a constituent unit derived from a (meth) acrylate having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxyl group.
(A3) The glass transition temperature (Tg) of the component may be from-50 ℃ to 50 ℃ or from-30 ℃ to 30 ℃. When the Tg of the component (A3) is-50 ℃ or higher, the adhesive tends to be prevented from excessively increasing in flexibility. This makes it easy to cut the film-like adhesive when dicing the wafer, and prevents the occurrence of burrs (burr). When the Tg of the (a3) component is 50 ℃ or less, the flexibility of the adhesive tends to be reduced. Therefore, when the film-like adhesive is attached to a wafer, the voids tend to be easily and sufficiently filled. Further, chipping (chipping) during dicing due to a decrease in the adhesion of the wafer can be prevented. Here, the glass transition temperature (Tg) refers to a value measured using a DSC (differential thermal scanning calorimeter) (for example, manufactured by Rigaku Corporation, Thermo Plus 2).
(A3) The weight average molecular weight (Mw) of the component (B) may be from 10 to 300 to 20 to 200 ten thousand. When the Mw of the component (a3) is within these ranges, the film formability, strength in the form of a film, flexibility, tackiness, and the like can be appropriately controlled, and the reflow property is excellent, and the embeddability can be improved. Here, Mw is a value measured by Gel Permeation Chromatography (GPC) and converted using a calibration curve based on standard polystyrene.
As commercially available products of component (A3), there may be mentioned, for example, SG-P3 and SG-80H, HTR-860P-3CSP (all manufactured by Nagase Chemtex Corporation).
The content of the component (a3) may be 50 to 95 parts by mass, 60 to 90 parts by mass, or 70 to 85 parts by mass, relative to 100 parts by mass of the total mass of the component (a). When the content of the component (a3) is within these ranges, migration (penetration) of copper ions in the binder tends to be more sufficiently suppressed.
In another embodiment, the thermosetting resin component (a) may contain an elastomer having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxyl group, and a curing agent capable of reacting with the crosslinkable functional group. Examples of the combination of the elastomer having a crosslinkable functional group and the curing agent capable of reacting with the crosslinkable functional group include a combination of an acrylic rubber having an epoxy group and a phenol resin.
(B) The components: flatting agent (surface regulator)
The film-like binder contains the component (B), whereby the incorporation of copper ions into the surface layer of the binder can be suppressed. (B) The component (c) is not particularly limited as long as the surface tension of the film-like adhesive can be adjusted, and may be a compound having a siloxane structure (in other words, polysiloxane or silicone). Examples of the component (B) include polysiloxanes (silicones) such as polyether modification, polyester modification, aralkyl modification, and phenyl modification. These may be used alone or in combination of two or more.
Examples of commercially available compounds having a siloxane structure include BYK-307, BYK-310, BYK-333, BYK-377, BYK-378 (all trade names, manufactured by BYK CHEMIE CO., LTD.), KF-945, KF-6204 (all trade names, manufactured by Shin-Etsu Chemical Co., Ltd.), and the like.
The content of the component (B) may be 0.1 to 5.0 parts by mass, 0.15 to 2.0 parts by mass, or 0.2 to 1.5 parts by mass, relative to 100 parts by mass of the total of the components (A). When the content of the component (B) is 0.1 parts by mass or more, the incorporation of copper ions into the surface layer of the binder tends to be further suppressed.
The film-like adhesive (adhesive composition) may further contain (C) an inorganic filler, (D) a coupling agent, (E) a curing accelerator, and the like.
(C) The components: inorganic filler
Examples of the component (C) include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum nitride, aluminum borate whisker, boron nitride, and silica. These may be used alone or in combination of two or more. Among them, the component (C) may be silica from the viewpoint of adjusting the melt viscosity. (C) The shape of the component is not particularly limited, and may be spherical.
The average particle diameter of the component (C) may be 0.01 to 1 μm, 0.01 to 0.8 μm, or 0.03 to 0.5 μm from the viewpoint of fluidity. Here, the average particle diameter is a value obtained by conversion from the BET specific surface area.
The content of the component (C) may be 0.1 to 50 parts by mass, 0.1 to 30 parts by mass, or 0.1 to 20 parts by mass, relative to 100 parts by mass of the total of the components (A).
(D) The components: coupling agent
(D) The component (b) may be a silane coupling agent. Examples of the silane coupling agent include gamma-ureidopropyltriethoxysilane, gamma-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, and 3- (2-aminoethyl) aminopropyltrimethoxysilane. These may be used alone or in combination of two or more.
(E) The components: curing accelerator
(E) The component (b) is not particularly limited, and a generally used one can be used. Examples of the component (E) include imidazoles and derivatives thereof, organophosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts, and the like. These may be used alone or in combination of two or more. Among them, from the viewpoint of reactivity, the component (E) may be an imidazole and a derivative thereof.
Examples of the imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-methylimidazole. These may be used alone or in combination of two or more.
The film-like adhesive (adhesive composition) may further contain other components. Examples of the other components include pigments, ion collectors, and antioxidants.
The content of the component (D), the component (E) and other components may be 0 to 30 parts by mass relative to 100 parts by mass of the total mass of the component (A).
Fig. 1 is a schematic cross-sectional view showing one embodiment of a film-like adhesive. The film-shaped adhesive 1 (adhesive film) shown in fig. 1 is formed by molding an adhesive composition into a film shape. The film-like adhesive 1 may be in a semi-cured (B-stage) state. Such a film-like adhesive 1 can be formed by applying an adhesive composition to a support film. When the varnish of the adhesive composition (adhesive varnish) is used, the film-shaped adhesive 1 can be formed by mixing the component (a), the component (B), and other components added as needed in a solvent, mixing or kneading the mixture to prepare an adhesive varnish, applying the adhesive varnish to a support film, and removing the solvent by heating and drying.
The support film is not particularly limited as long as it can withstand the above-mentioned heat drying, and examples thereof include a polyester film, a polypropylene film, a polyethylene terephthalate film, a polyimide film, a polyetherimide film, a polyether naphthalate film, and a polymethylpentene film. The support film may be a multilayer film in which two or more kinds of films are combined, or may be a film whose surface is treated with a release agent such as a silicone-based or silica-based release agent. The thickness of the support film may be, for example, 10 to 200 μm or 20 to 170 μm.
The mixing or kneading can be carried out by appropriately combining them using a dispersing machine such as a general mixer, a mill (raikai mixer), a three-roll mill, or a ball mill.
The solvent used for the preparation of the binder varnish is not limited as long as it can uniformly dissolve, knead or disperse the respective components, and conventionally known solvents can be used. Examples of such solvents include ketone solvents such as acetone, methyl ethyl ketone, and cyclohexanone, dimethylformamide, dimethylacetamide, N-methyl-2-pyrrolidone, toluene, and xylene. The solvent may be methyl ethyl ketone, cyclohexanone or the like from the viewpoint of high drying rate and low cost.
As a method for applying the adhesive varnish to the support film, a known method can be used, and examples thereof include a blade coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, a curtain coating method, and the like. The conditions for the heat drying are not particularly limited as long as the solvent used can be sufficiently volatilized, and the heat drying can be performed by heating at 50 to 150 ℃ for 1 to 30 minutes.
The thickness of the film-like adhesive may be 50 μm or less. When the thickness of the film-like adhesive is 50 μm or less, the distance between the semiconductor element and the support member on which the semiconductor element is mounted is close, and thus defects due to copper ions tend to easily occur. The film-shaped binder according to the present embodiment can sufficiently suppress migration (penetration) of copper ions in the binder, and therefore the thickness thereof can be set to 50 μm or less. The thickness of the film-like adhesive 1 may be 40 μm or less, 30 μm or less, 20 μm or less, or 15 μm or less. The lower limit of the thickness of the film-like adhesive 1 is not particularly limited, and may be, for example, 1 μm or more.
The copper ion penetration time of the film-shaped adhesive 1 (i.e., the cured product of the film-shaped adhesive) in the completely cured (C-stage) state may be 200 minutes or more, or 200 minutes or more, 300 minutes or more, or 500 minutes or more. The defects caused by copper ions tend to be easily generated during high-temperature treatment such as a reflow step. Therefore, when the state of complete curing (C-stage) is 200 minutes or more, it is predicted that defects due to copper ions are less likely to occur.
Fig. 2 is a schematic cross-sectional view showing one embodiment of the adhesive sheet. The adhesive sheet 100 shown in fig. 2 includes a substrate 2 and a film-like adhesive 1 provided on the substrate 2. Fig. 3 is a schematic cross-sectional view showing another embodiment of the adhesive sheet. The adhesive sheet 110 shown in fig. 3 includes a substrate 2, a film-like adhesive 1 provided on the substrate 2, and a cover film 3 provided on the surface of the film-like adhesive 1 opposite to the substrate 2.
The substrate 2 is not particularly limited and may be a substrate film. The substrate film may be the same as the support film described above.
The cover film 3 is used to prevent damage or contamination of the film-shaped adhesive, and may be, for example, a polyethylene film, a polypropylene film, a film whose surface is treated with a release agent, or the like. The thickness of the cover film 3 may be, for example, 15 to 200 μm or 70 to 170 μm.
The adhesive sheets 100 and 110 can be formed by applying an adhesive composition to a substrate film in the same manner as the method of forming the film-shaped adhesive. The method of applying the adhesive composition to the substrate 2 may be the same as the method of applying the adhesive composition to the support film described above.
The adhesive sheet 110 can be obtained by further laminating a cover film 3 on the film-like adhesive 1.
The adhesive sheets 100 and 110 may be formed using a film-like adhesive prepared in advance. In this case, the adhesive sheet 100 can be formed by laminating under predetermined conditions (for example, room temperature (20 ℃) or a heated state) using a roll laminator (roll laminator), a vacuum laminator, or the like. The adhesive sheet 100 can be continuously manufactured, and can be formed by using a roll laminator in a heated state from the viewpoint of excellent efficiency.
Another embodiment of the adhesive sheet is a dicing/die-bonding (dicing/die-bonding) integrated adhesive sheet in which the base material 2 is a dicing tape. When the dicing die-bonding integrated adhesive sheet is used, the semiconductor wafer can be laminated at one time, and thus the work efficiency can be improved.
Examples of the dicing tape include plastic films such as a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, and a polyimide film. The dicing tape may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment as needed. The dicing tape may have an adhesive property (adhesiveness). The dicing tape may be a tape obtained by imparting tackiness to the plastic film, or a tape obtained by providing a pressure-sensitive adhesive layer on one surface of the plastic film. The pressure-sensitive adhesive layer may be of any of a pressure-sensitive type and a radiation-curable type, and any conventionally known pressure-sensitive adhesive layer can be used without particular limitation as long as it has a sufficient adhesive force (adhesive force) that does not scatter the semiconductor element at the time of dicing and has a low adhesive force to such an extent that the semiconductor element is not damaged in the subsequent semiconductor element pickup step.
The thickness of the dicing tape may be 60 to 150 μm or 70 to 130 μm from the viewpoint of economy and handling of the film.
Examples of such a dicing die-bonding integrated adhesive sheet include a dicing die-bonding integrated adhesive sheet having a structure shown in fig. 4, and a dicing die-bonding integrated adhesive sheet having a structure shown in fig. 5. Fig. 4 is a schematic cross-sectional view showing another embodiment of the adhesive sheet. Fig. 5 is a schematic cross-sectional view showing another embodiment of the adhesive sheet. The adhesive sheet 120 shown in fig. 4 includes a dicing tape 7, a pressure-sensitive adhesive layer 6, and a film-like adhesive 1 in this order. The adhesive sheet 130 shown in fig. 5 may include a dicing tape 7 and a film-like adhesive 1 provided on the dicing tape 7.
The adhesive sheet 120 can be obtained by, for example, providing a pressure-sensitive adhesive layer 6 on a dicing tape 7, and further laminating a film-like adhesive 1 on the pressure-sensitive adhesive layer 6. The adhesive sheet 130 can be obtained by bonding the dicing tape 7 and the film-like adhesive 1, for example.
The film-like adhesive and the adhesive sheet can be used for manufacturing a semiconductor device, and can be used for manufacturing a semiconductor device including the steps of: after a film-like adhesive and a dicing tape are bonded to a semiconductor wafer or a singulated semiconductor element (semiconductor chip) at 0 to 90 ℃, a semiconductor element with a film-like adhesive is obtained by dicing using a rotary blade, a laser, or stretching, and then the semiconductor element with a film-like adhesive is bonded to an organic substrate, a lead frame, or another semiconductor element.
Examples of the semiconductor wafer include compound semiconductors such as single crystal silicon, polycrystalline silicon, various ceramics, and gallium arsenide.
The film-like adhesive and the adhesive sheet can be used for bonding semiconductor elements such as IC and LSI and lead frames such as 42 alloy lead frames and copper lead frames; plastic films such as polyimide resin and epoxy resin; a material obtained by impregnating a base material such as glass nonwoven fabric with a plastic such as polyimide resin or epoxy resin and curing the plastic; a crystal grain bonding adhesive for a semiconductor mounting support member such as alumina or the like.
The film-like adhesive and the adhesive sheet are also suitable as an adhesive for bonding a semiconductor element and a semiconductor element in a Stacked-PKG (Stacked-PKG) structure in which a plurality of semiconductor elements are Stacked. In this case, one of the semiconductor elements serves as a support member for mounting the semiconductor element.
The film-like adhesive and the adhesive sheet can be used as a protective sheet for protecting the back surface of a semiconductor element of a flip-chip semiconductor device, a sealing sheet for sealing between the front surface of a semiconductor element of a flip-chip semiconductor device and an adherend, and the like.
A semiconductor device manufactured using a film-like adhesive will be specifically described with reference to the drawings. In addition, in recent years, semiconductor devices having various structures have been proposed, and the use of the film-like adhesive according to the present embodiment is not limited to the semiconductor devices having the structures described below.
Fig. 6 is a schematic cross-sectional view showing one embodiment of a semiconductor device. The semiconductor device 200 shown in fig. 6 includes: a semiconductor element 9; a support member 10 on which the semiconductor element 9 is mounted; and an adhesive member (cured product 1c of a film-like adhesive) which is provided between the semiconductor element 9 and the supporting member 10 and bonds the semiconductor element 9 and the supporting member 10 together. Connection terminals (not shown) of the semiconductor element 9 are electrically connected to external connection terminals (not shown) via wires 11, and are sealed with a sealing material 12.
Fig. 7 is a schematic cross-sectional view showing another embodiment of the semiconductor device. In the semiconductor device 210 shown in fig. 7, the first-stage semiconductor element 9a is bonded to the support member 10 on which the terminal 13 is formed by a bonding member (cured product 1c of a film-like adhesive), and the second-stage semiconductor element 9b is further bonded to the first-stage semiconductor element 9a by a bonding member (cured product 1c of a film-like adhesive). Connection terminals (not shown) of the first-stage semiconductor element 9a and the second-stage semiconductor element 9b are electrically connected to external connection terminals via lead wires 11, and are sealed with a sealing material 12. As described above, the film-like adhesive according to the present embodiment can be suitably used for a semiconductor device having a structure in which a plurality of semiconductor elements are stacked.
The semiconductor device (semiconductor package) shown in fig. 6 and 7 is obtained, for example, by performing the following steps: a film-like adhesive is provided between the semiconductor element and the supporting member or between the semiconductor element and the semiconductor element, and these are bonded by heat-pressure bonding, and then, if necessary, a wire bonding step, a sealing step using a sealing material, a heat-melting step including reflow using solder, and the like are performed. The heating temperature in the heating and crimping step is usually 20 to 250 ℃, the load is usually 0.1 to 200N, and the heating time is usually 0.1 to 300 seconds.
As a method of providing the film-like adhesive between the semiconductor element and the supporting member or between the semiconductor element and the semiconductor element, as described above, a method of manufacturing a semiconductor element with a film-like adhesive in advance and then attaching the semiconductor element to the supporting member or the semiconductor element may be used.
The support member may include a member having copper as a material. In the semiconductor device according to the present embodiment, since the semiconductor element and the supporting member are bonded to each other by the cured product 1c of the film-like adhesive, even when a member made of copper is used as a constituent member of the semiconductor device, the influence of copper ions generated from the member can be reduced, and occurrence of electrical failure due to the copper ions can be sufficiently suppressed.
Here, as the member made of copper, for example, a lead frame, a wiring, a lead wire, a heat dissipating material, and the like can be given, and in any case where copper is used, the influence of copper ions can be reduced.
Next, an embodiment of a method for manufacturing a semiconductor device when the die-bonding integrated adhesive sheet shown in fig. 4 is used will be described. The method for manufacturing a semiconductor device using the dicing die-bonding integrated adhesive sheet is not limited to the method for manufacturing a semiconductor device described below.
First, the semiconductor wafer is pressure bonded to the film-like adhesive 1 in the adhesive sheet 120 (dicing die-bonding integrated adhesive sheet), and is bonded and held to be fixed (mounting step). This step can be performed while pressing with a pressing mechanism such as a pressure roller.
Then, the semiconductor wafer is diced. In this way, the semiconductor wafer is cut into a predetermined size, and a plurality of singulated semiconductor elements (semiconductor chips) with the film-like adhesive are manufactured. Dicing can be performed, for example, by a conventional method from the circuit surface side of the semiconductor wafer. In this step, for example, a cutting method called full cut (full cut) in which cutting is performed up to a dicing tape, a method of cutting a semiconductor wafer into a half cut and stretching the cut while cooling, a cutting method using a laser, or the like can be employed. The cutting device used in this step is not particularly limited, and a conventionally known cutting device can be used.
In order to peel off the semiconductor element adhesively fixed on the dicing die-bond integrated adhesive sheet, pickup of the semiconductor element is performed. The pickup method is not particularly limited, and various conventionally known methods can be used. For example, there is a method in which each semiconductor element is pushed from the dicing die-bonding integrated adhesive sheet side by a pin, and the pushed semiconductor element is picked up by a pickup device.
Here, when the pressure-sensitive adhesive layer is of a radiation (e.g., ultraviolet) curing type, the pressure-sensitive adhesive layer is irradiated with radiation and then picked up. Thus, the adhesive strength of the pressure-sensitive adhesive layer to the film-like adhesive is reduced, and the semiconductor element is easily peeled. As a result, the semiconductor element can be picked up without being damaged.
Then, the semiconductor element with the film-like adhesive formed by dicing is bonded to a support member for mounting the semiconductor element through the film-like adhesive. The bonding may be performed by crimping. The conditions for the die bonding are not particularly limited, and can be set as appropriate as needed. Specifically, the bonding can be performed at a die bonding temperature of 80 to 160 ℃, a bonding load of 5 to 15N, and a bonding time of 1 to 10 seconds.
If necessary, a step of thermally curing the film-like adhesive may be provided. By thermally curing the film-like adhesive that bonds the support member and the semiconductor element through the bonding step, the bonding and fixing can be performed more firmly. When the heat curing is performed, the curing may be performed while applying pressure. The heating temperature in this step can be appropriately changed depending on the constituent components of the film-like adhesive. The heating temperature may be, for example, 60 to 200 ℃. Further, the present step may be performed while changing the temperature or pressure in stages.
Next, a wire bonding step of electrically connecting the tip of the terminal portion (inner lead) of the supporting member and the electrode pad on the semiconductor element with a bonding wire is performed. As the bonding wire, for example, a gold wire, an aluminum wire, a copper wire, or the like is used. The temperature for wire bonding may be in the range of 80 to 250 ℃ or 80 to 220 ℃. The heating time may be several seconds to several minutes. The connection may be performed by using both vibration energy generated by ultrasonic waves and pressure bonding energy generated by applying pressure in a state where the heating is performed in the temperature range.
Next, a sealing step of sealing the semiconductor element with a sealing resin is performed. This step is performed to protect the semiconductor element or the bonding wire mounted on the support member. This step is performed by molding the sealing resin with a mold. The sealing resin may be, for example, an epoxy resin. The substrate and the residue are buried by heat and pressure at the time of sealing, and peeling caused by bubbles at the bonding interface can be prevented.
Next, in the post-curing step, the sealing resin that was not cured sufficiently in the sealing step is completely cured. Even when the film-shaped adhesive is not thermally cured in the sealing step, the film-shaped adhesive can be thermally cured to be bonded and fixed while the sealing resin is cured in this step. The heating temperature in this step can be appropriately set according to the type of the sealing resin, and for example, the heating temperature can be in the range of 165 to 185 ℃, and the heating time can be about 0.5 to 8 hours.
Then, the semiconductor element with the film-like adhesive bonded to the support member is heated in a reflow furnace. In this step, the semiconductor device sealed with the resin may be surface-mounted on the support member. As a method of surface mounting, for example, reflow soldering in which solder is supplied to a printed wiring board in advance and then heated and melted by warm air or the like to perform soldering is given. Examples of the heating method include hot air reflux and infrared reflux. The heating method may be a method of heating the entire structure or a method of heating a part of the structure. The heating temperature may be, for example, 240 to 280 ℃.
When semiconductor elements are stacked in multiple layers, the thermal history of the wire bonding process or the like increases, and there is a possibility that the peeling effect due to air bubbles existing at the interface between the film-like adhesive and the semiconductor elements is increased. However, the film-like adhesive according to the present embodiment tends to have a reduced cohesive force and an improved embeddability by using a specific acrylic rubber. Therefore, bubbles are less likely to be taken into the semiconductor device, and bubbles can be easily diffused in the sealing step, thereby preventing peeling caused by bubbles at the bonding interface.
Examples
The present invention will be specifically described below with reference to examples, but the present invention is not limited to these examples.
[ production of film-like adhesive ]
(examples 1 to 3 and comparative example 1)
< preparation of adhesive varnish >
Cyclohexanone was added to a composition comprising an epoxy resin as a thermosetting resin (a1), a phenol resin as a curing agent (a2), and an inorganic filler (C) under the brand names and the composition ratios (unit: parts by mass) shown in table 1, and the mixture was stirred and mixed. To this, acrylic rubber as an elastomer (a3) shown in table 1 was added and stirred, and further, (D) a coupling agent, (E) a curing accelerator, and (B) a leveling agent shown in table 1 were added and stirred until the components became uniform, thereby preparing an adhesive varnish. The numerical values of the component (a3) and the component (C) shown in table 1 refer to parts by mass of the solid content.
(A) Thermosetting resin composition
(A1) Thermosetting resin
(A1-1) YDCN-700-10 (trade name, NIPPON STEEL & SUMIKIN CHEMICAL CO., LTD., manufactured by O.cresol novolak type epoxy resin, epoxy equivalent: 209g/eq)
(A2) Curing agent
(A2-1) PSM4326 (trade name, manufactured by Guinei Chemical Industry Co., Ltd., phenol novolac resin, hydroxyl equivalent: 105g/eq)
(A3) Elastic body
(A3-1) SG-P3 (trade name, manufactured by Nagase Chemtex Corporation, methyl ethyl ketone solution of acrylic rubber having epoxy group, weight average molecular weight of acrylic rubber: 85 ten thousand)
(B) Leveling agent
(B1) BYK-333 (trade name, BYK CHEMIE CO, LTD, manufactured by polyether modified polydimethylsiloxane)
(C) Inorganic filler
(C1) SC2050-HLG (trade name, manufactured by Admatech corporation, silica Filler Dispersion having an average particle diameter of 0.50 μm)
(D) Coupling agent
(D1) A-189 (trade name,. gamma. -mercaptopropyltrimethoxysilane, manufactured by ENEOS NUC Corporation)
(D2) A-1160 (trade name,. gamma. -ureidopropyltriethoxysilane, manufactured by ENEOS NUC Corporation)
(E) Curing accelerator
(E1)2PZ-CN (trade name, SHIKOKU CHEMICALS CORPORATION, 1-cyanoethyl-2-phenylimidazole)
< preparation of film-like adhesive >
The prepared binder varnish was filtered with a 100-mesh filter and subjected to vacuum defoaming. As a base film, a release-treated polyethylene terephthalate (PET) film having a thickness of 38 μm was prepared, and the binder varnish after vacuum defoaming was applied to the PET film. The applied adhesive varnish was dried by heating at 2 stages of 5 minutes at 90 ℃ and then 5 minutes at 130 ℃ to obtain the film-like adhesives of examples 1 to 3 and comparative example 1 in a B-stage state. In the film-like adhesive, the thickness was adjusted to 10 μm depending on the amount of the adhesive varnish applied.
[ measurement of copper ion permeation time ]
< preparation of solution A >
2.0g of anhydrous copper sulfate (II) was dissolved in 1020g of distilled water, and stirred until the copper sulfate was completely dissolved, thereby preparing an aqueous copper sulfate solution having a copper ion concentration of 500mg/kg in terms of Cu element. The resulting copper sulfate aqueous solution was used as solution A.
< preparation of solution B >
1.0g of anhydrous sodium sulfate was dissolved in 1000g of distilled water, and stirred until the sodium sulfate was completely dissolved. 1000g of N-methyl-2-pyrrolidone (NMP) was further added thereto, and stirring was performed. Then, air cooling was performed until the temperature became room temperature, thereby obtaining an aqueous sodium sulfate solution. The resulting solution was defined as solution B.
< determination of copper ion permeation time >
The film-shaped adhesives of examples 1 to 3 and comparative example 1 in the B-stage state were further dried by heating at 170 ℃ for 1 hour to prepare film-shaped adhesives of examples 1 to 3 and comparative example 1 in the C-stage state. The film-like adhesives of examples 1 to 3 and comparative example 1 (thickness: 10 μm) in the C-stage state were each cut into a circular shape having a diameter of about 3 cm. Next, two silicon packing sheets (silicon packing sheets) having a thickness of 1.5mm, an outer diameter of about 3cm and an inner diameter of 1.8cm were prepared. The adhesive film cut into a circular shape was sandwiched between two silicon liner sheets, and the adhesive film was sandwiched between flange portions of two glass grooves (cells) having a volume of 50mL, and fixed by rubber bands.
Then, 50g of the A liquid was poured into one of the glass tanks, and 50g of the B liquid was poured into the other glass tank. Mixing Mars Carbon (STAEDTLER Mars GmbH)&The preparation of Co, the preparation of KG,
) As carbon electrodes, were inserted into the respective tanks. The liquid A side was set as an anode, the liquid B side was set as a cathode, and the anode and a DC power supply were connected (A)&D Company, manufactured by Limited, DC Power supply AD-9723D). The cathode and the dc power supply were connected in series via an ammeter (digital multimeter PC-720M manufactured by Sanwa Electric Instrument co., ltd.). At room temperature, a voltage was applied at an applied voltage of 24.0V, and after the application, the current value measurement was started. The measurement was carried out until the current value exceeded 5. mu.A, and the time until the current value became 1. mu.A was taken as the copper ion penetration time. The results are shown in table 1. In this evaluation, it can be said that the longer the permeation time, the more the movement (permeation) of copper ions is suppressed.
[ measurement of shear Strength of Crystal grains after curing ]
< fabrication of semiconductor device >
A dicing tape (110 μm thick, manufactured by hitachi chemical corporation) was prepared, and the film-like adhesives of examples 1 to 3 and comparative example 1 (10 μm thick) in a B-stage state were attached to the tape, thereby producing a dicing die-bonding integrated adhesive sheet including the dicing tape and the film-like adhesive. A dicing sample was prepared by laminating a semiconductor wafer 400 μm thick on the film-like adhesive side of the dicing die-bonding integrated adhesive sheet at a stage temperature of 70 ℃.
The resulting cut sample was cut using a full-automatic microtome DFD-6361 (manufactured by DISCO Corporation). The cutting was carried out in a stepwise manner using two blades, and cutting blades ZH05-SD3500-N1-xx-DD and ZH05-SD4000-N1-xx-BB (both manufactured by DISCO Corporation) were used. The cutting conditions were a blade rotation speed of 4000rpm, a cutting speed of 50mm/sec, and a chip size of 5 mm. times.5 mm. The cutting is performed in a first stage so that the semiconductor wafer remains about 200 μm, and then, in a second stage, the dicing tape cuts a notch of about 20 μm.
Then, the semiconductor chip obtained by cutting was thermally pressed against a solder resist (TAIYO HOLDINGS CO., LTD., trade name: AUS-308). The pressure conditions were 120 ℃ for 1 second and 0.1 MPa. Subsequently, the sample obtained by pressure bonding was put into a dryer and cured at 170 ℃ for 1 hour. The semiconductor chip pressure-bonded to the solder resist was cured, and stretched while hooking the semiconductor chip with a universal bond tester (manufactured by Nordson Advanced Technology, trade name: series 4000), to thereby measure the post-curing die shear strength of the semiconductor chip and the solder resist. The stage temperature was set to 250 ℃ for the measurement conditions. The results are shown in table 1.
[ Table 1]
As shown in table 1, the film-shaped binders of examples 1 to 3 were less permeable to copper ions than the film-shaped binder of comparative example 1. The reason is presumed to be: the surface tension of the binder is reduced by the leveling agent, and the taking-in of copper ions into the surface layer of the binder is suppressed.
From the above, it was confirmed that the film-shaped binder of the present invention can sufficiently suppress the defects accompanying the movement of copper ions in the binder.
Description of the symbols
1-film-like adhesive, 2-substrate, 3-coverlay film, 6-pressure-sensitive adhesive layer, 7-dicing tape, 9a, 9 b-semiconductor element, 10-support member, 11-wire, 12-sealing material, 13-terminal, 100, 110, 120, 130-adhesive sheet, 200, 210-semiconductor device.
Claims (11)
1. A film-like adhesive for bonding a semiconductor element and a supporting member on which the semiconductor element is mounted, wherein,
the film-shaped adhesive contains a thermosetting resin component and a leveling agent.
2. The film-like adhesive of claim 1,
the leveling agent is a compound with a siloxane structure.
3. The film-like adhesive according to claim 1 or 2,
the thermosetting resin component comprises a thermosetting resin, a curing agent and an elastomer.
4. The film-like adhesive according to any one of claims 1 to 3,
the film-like adhesive has a thickness of 50 μm or less.
5. An adhesive sheet, comprising:
a substrate; and
the film-like adhesive according to any one of claims 1 to 4, which is provided on one surface of the substrate.
6. The adhesive sheet according to claim 5,
the substrate is a dicing tape.
7. A semiconductor device includes:
a semiconductor element;
a support member on which the semiconductor element is mounted; and
an adhesive member disposed between the semiconductor element and the support member and adhering the semiconductor element and the support member,
the adhesive member is a cured product of the film-like adhesive according to any one of claims 1 to 4.
8. The semiconductor device according to claim 7,
the support member includes a member made of copper.
9. A method for manufacturing a semiconductor device, comprising the step of bonding a semiconductor element and a supporting member using the film-like adhesive according to any one of claims 1 to 4.
10. A method for manufacturing a semiconductor device includes the steps of:
a step of attaching the film-like adhesive of the adhesive sheet according to claim 5 or 6 to a semiconductor wafer;
a step of cutting the semiconductor wafer to which the film-like adhesive is attached to produce a plurality of singulated semiconductor elements with the film-like adhesive; and
and bonding the semiconductor element with the film-like adhesive to a support member.
11. The method for manufacturing a semiconductor device according to claim 10, further comprising a step of heating the semiconductor element with the film-like adhesive bonded to the support member using a reflow furnace.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019-012270 | 2019-01-28 | ||
| JP2019012270A JP7251167B2 (en) | 2019-01-28 | 2019-01-28 | FILM ADHESIVE, ADHESIVE SHEET, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
| PCT/JP2020/001788 WO2020158490A1 (en) | 2019-01-28 | 2020-01-20 | Filmy adhesive, adhesive sheet, semiconductor device, and method for manufacturing same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113348539A true CN113348539A (en) | 2021-09-03 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080011016.6A Pending CN113348539A (en) | 2019-01-28 | 2020-01-20 | Film-like adhesive, adhesive sheet, and semiconductor device and method for manufacturing the same |
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| JP (1) | JP7251167B2 (en) |
| KR (1) | KR20210114010A (en) |
| CN (1) | CN113348539A (en) |
| SG (1) | SG11202108023SA (en) |
| TW (1) | TWI830861B (en) |
| WO (1) | WO2020158490A1 (en) |
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| KR102466644B1 (en) * | 2021-03-23 | 2022-11-16 | 주식회사 엘엠에스 | Resin composition and optically clear adhesive |
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- 2019-01-28 JP JP2019012270A patent/JP7251167B2/en active Active
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- 2020-01-20 WO PCT/JP2020/001788 patent/WO2020158490A1/en active Application Filing
- 2020-01-20 CN CN202080011016.6A patent/CN113348539A/en active Pending
- 2020-01-20 KR KR1020217024426A patent/KR20210114010A/en not_active Application Discontinuation
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| JP2011052109A (en) * | 2009-09-01 | 2011-03-17 | Hitachi Chem Co Ltd | Film-like adhesive, adhesive sheet, and semiconductor device |
| US20120193817A1 (en) * | 2011-01-31 | 2012-08-02 | Shin-Etsu Chemical Co., Ltd. | Epoxy resin composition, die attach method using same, and semiconductor device containing cured product thereof |
| JP2015081269A (en) * | 2013-10-21 | 2015-04-27 | 信越化学工業株式会社 | Conductive epoxy resin composition for screen printing, die-attach method using the same, and semiconductor device having cured product of the composition |
| JP2016190964A (en) * | 2015-03-31 | 2016-11-10 | 日立化成株式会社 | Adhesive film |
| US20170158926A1 (en) * | 2015-12-07 | 2017-06-08 | Shin-Etsu Chemical Co., Ltd. | Liquid resin composition, die attaching method using same and semiconductor device having cured product of same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7251167B2 (en) | 2023-04-04 |
| TW202037696A (en) | 2020-10-16 |
| KR20210114010A (en) | 2021-09-17 |
| SG11202108023SA (en) | 2021-08-30 |
| TWI830861B (en) | 2024-02-01 |
| JP2020120073A (en) | 2020-08-06 |
| WO2020158490A1 (en) | 2020-08-06 |
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