CN113348145A - Mems设备及其制备方法、电子设备 - Google Patents
Mems设备及其制备方法、电子设备 Download PDFInfo
- Publication number
- CN113348145A CN113348145A CN201980086980.2A CN201980086980A CN113348145A CN 113348145 A CN113348145 A CN 113348145A CN 201980086980 A CN201980086980 A CN 201980086980A CN 113348145 A CN113348145 A CN 113348145A
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- mems device
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- rigid
- film structure
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- 238000002360 preparation method Methods 0.000 title description 5
- 239000010409 thin film Substances 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 239000010408 film Substances 0.000 claims abstract description 34
- 239000012528 membrane Substances 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 31
- 230000008569 process Effects 0.000 claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 2
- 230000008859 change Effects 0.000 description 9
- 238000001514 detection method Methods 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 210000000988 bone and bone Anatomy 0.000 description 2
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
Abstract
一种MEMS设备、包括该MEMS设备的电子设备以及该MEMS设备的制备方法，该MEMS设备的薄膜结构(10)包括位于中间区域的具有第一刚性的第一刚性区域(110)和位于边缘区域的具有第二刚性的第二刚性区域(120)，第一刚性小于第二刚性，第二刚性区域包括至少一个从薄膜结构(10)表面向外延伸的凸起(122)。MEMS设备的制备方法包括提供基板(210)；在基板(210)上形成沟槽(212)；提供薄膜结构(10)。该MEMS设备通过增加支撑结构扩孔时的制程裕度，不会因为扩孔误差导致薄膜结构的第一刚性区域(110)的刚性发生实质性变化，从而避免影响MEMS设备的性能。
Description
PCT国内申请，说明书已公开。
Claims (20)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2019/089575 WO2020237640A1 (zh) | 2019-05-31 | 2019-05-31 | Mems设备及其制备方法、电子设备 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113348145A true CN113348145A (zh) | 2021-09-03 |
Family
ID=73551950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980086980.2A Pending CN113348145A (zh) | 2019-05-31 | 2019-05-31 | Mems设备及其制备方法、电子设备 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN113348145A (zh) |
| WO (1) | WO2020237640A1 (zh) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104113810A (zh) * | 2014-07-18 | 2014-10-22 | 瑞声声学科技(深圳)有限公司 | Mems麦克风及其制备方法与电子设备 |
| CN204014058U (zh) * | 2014-07-31 | 2014-12-10 | 歌尔声学股份有限公司 | 一种mems麦克风 |
| US20160373874A1 (en) * | 2015-06-17 | 2016-12-22 | Robert Bosch Gmbh | In-plane overtravel stops for mems microphone |
| US20170081176A1 (en) * | 2015-09-22 | 2017-03-23 | Hangzhou Silan Microelectronics Co., Ltd. | Mems device, semiconductor device and method for manufacturing the same |
| US20180007474A1 (en) * | 2016-06-30 | 2018-01-04 | Cirrus Logic International Semiconductor Ltd. | Mems devices and processes |
| US20180148315A1 (en) * | 2016-11-29 | 2018-05-31 | Cirrus Logic International Semiconductor Ltd. | Mems devices and processes |
| US20190052976A1 (en) * | 2017-08-09 | 2019-02-14 | Db Hitek Co., Ltd. | Mems microphone and method of manufacturing the same |
-
2019
- 2019-05-31 WO PCT/CN2019/089575 patent/WO2020237640A1/zh active Application Filing
- 2019-05-31 CN CN201980086980.2A patent/CN113348145A/zh active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104113810A (zh) * | 2014-07-18 | 2014-10-22 | 瑞声声学科技(深圳)有限公司 | Mems麦克风及其制备方法与电子设备 |
| CN204014058U (zh) * | 2014-07-31 | 2014-12-10 | 歌尔声学股份有限公司 | 一种mems麦克风 |
| US20160373874A1 (en) * | 2015-06-17 | 2016-12-22 | Robert Bosch Gmbh | In-plane overtravel stops for mems microphone |
| US20170081176A1 (en) * | 2015-09-22 | 2017-03-23 | Hangzhou Silan Microelectronics Co., Ltd. | Mems device, semiconductor device and method for manufacturing the same |
| US20180007474A1 (en) * | 2016-06-30 | 2018-01-04 | Cirrus Logic International Semiconductor Ltd. | Mems devices and processes |
| US20180148315A1 (en) * | 2016-11-29 | 2018-05-31 | Cirrus Logic International Semiconductor Ltd. | Mems devices and processes |
| US20190052976A1 (en) * | 2017-08-09 | 2019-02-14 | Db Hitek Co., Ltd. | Mems microphone and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020237640A1 (zh) | 2020-12-03 |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |