CN113346887A - Power supply change-over switch, power supply change-over switch circuit and chip - Google Patents
Power supply change-over switch, power supply change-over switch circuit and chip Download PDFInfo
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- CN113346887A CN113346887A CN202110648680.8A CN202110648680A CN113346887A CN 113346887 A CN113346887 A CN 113346887A CN 202110648680 A CN202110648680 A CN 202110648680A CN 113346887 A CN113346887 A CN 113346887A
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- 239000000758 substrate Substances 0.000 claims description 80
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 238000012795 verification Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
Abstract
The embodiment of the invention discloses a power supply change-over switch, a power supply change-over switch circuit and a chip. The power supply changeover switch includes: the switching module comprises a first control end, a second control end, a first power supply input end and a second power supply input end, and is used for switching the output of the first power supply or the second power supply according to gating signals of the first control end and the second control end; and the discharging module is used for grounding the first control end and the second control end when the output voltage of the switching module is zero. The embodiment of the invention solves the problem that the traditional power supply change-over switch is low in reliability and stability due to latch-up possibly caused in use.
Description
Technical Field
The embodiment of the invention relates to the electronic circuit technology, in particular to a power supply change-over switch, a power supply change-over switch circuit and a chip.
Background
With the increase of the scale of integrated circuits and the complexity of circuit structures, people have increasingly high requirements on power supply switching circuits.
The conventional power supply switch generally adopts a structure that two MOS transistors are connected with each other.
When two MOS tube substrates of the traditional power supply change-over switch are both connected with the power supply output end, latch-up effect is possibly caused in the power-on process, so that the circuit cannot work normally and even is burnt.
Disclosure of Invention
The invention provides a power supply change-over switch, a power supply change-over switch circuit and a chip, which are used for avoiding latch-up effect and improving the reliability of the power supply change-over switch.
In a first aspect, an embodiment of the present invention provides a power switch, including a switching module, including a first control end, a second control end, a first power input end, and a second power input end, where the switching module is configured to switch output of a first power or a second power according to gating signals of the first control end and the second control end; and the discharging module is used for grounding the first control end and the second control end when the output voltage of the switching module is zero.
Further, the switching module comprises a first MOS transistor, a second MOS transistor, a first substrate voltage input end and a second substrate voltage input end, and the discharging module comprises a third MOS transistor, a fourth MOS transistor, a first resistor and a second resistor; the drain electrode of the first MOS tube, the drain electrode of the second MOS tube and the grid electrode of the fourth MOS tube are all connected with the grid electrode of the third MOS tube, and the grid electrode of the third MOS tube is used as the output end of the power supply switching circuit; the source electrode of the third MOS tube is connected with the first end of the first resistor, the grid electrode of the first MOS tube is connected with the second end of the first resistor, the grid electrode of the first MOS tube is used as a first control end, and the source electrode of the first MOS tube is used as a first power supply input end; the substrate of the first MOS tube is used as a first substrate voltage input end; a source electrode of the fourth MOS tube is connected with the first end of the second resistor, a grid electrode of the second MOS tube is connected with the second end of the second resistor, the grid electrode of the second MOS tube is used as a second control end, and the source electrode of the second MOS tube is used as a second power supply input end; the substrate of the second MOS tube is used as a second substrate voltage input end; the first MOS tube, the second MOS tube, the third MOS tube and the fourth MOS tube are PMOS tubes.
Further, the first resistor has a resistance of 1-2 mega ohms.
In a second aspect, an embodiment of the present invention further provides a power supply changeover switch circuit, including any one of the power supply changeover switches described above, and further including a first substrate changeover circuit, where the first substrate changeover circuit includes a first input terminal, a first power supply output terminal, and a first substrate voltage output terminal, the first power supply output terminal is connected to the first power supply input terminal, and the first substrate voltage output terminal is connected to the first substrate voltage input terminal; and the second substrate switching circuit comprises a second input end, a second power supply output end and a second substrate voltage output end, the second power supply output end is connected with the second power supply input end, and the second substrate voltage output end is connected with the second substrate voltage input end.
Further, the first substrate switching circuit comprises a fifth MOS transistor, a sixth MOS transistor, a seventh MOS transistor and an eighth MOS transistor; the source electrode of the fifth MOS tube is connected with the source electrode of the sixth MOS tube and serves as a first input end, the source electrode of the seventh MOS tube, the grid electrode of the fifth MOS tube and the grid electrode of the sixth MOS tube are connected and serve as a first output end, the substrate of the fifth MOS tube, the drain electrode of the sixth MOS tube and the drain electrode of the seventh MOS tube are connected and serve as a first substrate voltage output end, the drain electrode of the fifth MOS tube, the grid electrode of the seventh MOS tube and the drain electrode of the eighth MOS tube are connected, and the grid electrode of the eighth MOS tube is grounded; the fifth MOS tube, the sixth MOS tube and the seventh MOS tube are PMOS tubes, and the eighth MOS tube is an NMOS tube.
Further, the second substrate switching circuit has the same composition and structure as the first substrate switching circuit.
Further, the resistance value of the first resistor is the same as that of the second resistor.
Further, the gating signal of the first control terminal is a high-low level signal.
Further, the gating signal of the second control terminal is a high-low level signal.
In a third aspect, an embodiment of the present invention further provides a chip, which is characterized by including any one of the power supply changeover switch circuits described above.
The switching module is used for switching the output of the first power supply or the second power supply according to gating signals of the first control end and the second control end; and the discharging module is used for grounding the first control end and the second control end when the output voltage of the switching module is zero. The discharging module enables the switching module to recover the stable state under the condition that the potential state of the switching module is unstable. The latch-up effect is avoided, and the stability and the reliability of the power supply change-over switch are greatly improved.
Drawings
Fig. 1 is a schematic structural diagram of a power supply switch according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a power supply changeover switch circuit according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a first substrate switching circuit according to an embodiment of the present invention;
fig. 4 is a functional verification diagram of a power switch circuit according to an embodiment of the invention;
description of the drawings:
11-switching module, 12-discharging module, 21-first substrate switching circuit, 22-second substrate switching circuit
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Fig. 1 is a schematic structural diagram of a power supply switch according to an embodiment of the present invention. Referring to fig. 1, the power supply changeover switch includes:
a switching module 11, including a first control terminal SW1, a second control terminal SW2, a first power input terminal IN1 and a second power input terminal IN2, the switching module 11 being configured to switch the output of the first power supply or the second power supply according to the gate signals of the first control terminal SW1 and the second control terminal SW 2;
and a discharging module 12 for grounding the first control terminal SW1 and the second control terminal SW2 when the output voltage of the switching module 11 is zero.
The switching module 11 may be any circuit capable of switching between two power supplies, and the embodiment of the present invention is not limited to a specific configuration. For example, the structure may be obtained by connecting the drains of two PMOS transistors to each other. The discharge module 12 may be any circuit capable of returning the switching module 11 to the stable state when the potential state of the switching module 11 is unstable, and the embodiment of the present invention is not limited to a specific configuration thereof. And a switching module 11 and a discharging module 12 will be disclosed below. In the embodiment of the present invention, the discharge module 12 enables the switching module 11 to recover the stable state when the potential state of the switching module 11 is unstable. The latch-up effect is avoided, and the stability and the reliability of the power supply change-over switch are greatly improved.
With continued reference to fig. 1, in other embodiments, the switching module 11 includes a first MOS transistor M1, a second MOS transistor M2, a first substrate voltage input terminal CD1, and a second substrate voltage input terminal CD2, and the discharging module 12 includes a third MOS transistor M3, a fourth MOS transistor M4, a first resistor R1, and a second resistor R2;
the drain electrode of the first MOS transistor M1, the drain electrode of the second MOS transistor M2 and the gate electrode of the fourth MOS transistor M4 are all connected with the gate electrode of the third MOS transistor M3, and the gate electrode of the third MOS transistor M3 is used as the output end of the power switching circuit;
the source of the third MOS transistor M3 is connected to the first end of the first resistor R1, the gate of the first MOS transistor M1 is connected to the second end of the first resistor R1, the gate of the first MOS transistor M1 serves as the first control terminal SW1, and the source of the first MOS transistor M1 serves as the first power input terminal IN 1; the substrate of the first MOS transistor M1 is used as a first substrate voltage input end CD 1; a source electrode of the fourth MOS transistor M4 is connected to the first end of the second resistor R2, a gate electrode of the second MOS transistor M2 is connected to the second end of the second resistor R2, a gate electrode of the second MOS transistor M2 serves as the second control terminal SW2, and a source electrode of the second MOS transistor M2 serves as the second power input terminal; the substrate of the second MOS transistor M2 is used as a second substrate voltage input end; the first MOS transistor M1, the second MOS transistor M2, the third MOS transistor M3, and the fourth MOS transistor M4 are PMOS transistors, and the substrate is connected to the source.
In order to avoid the influence of the latch-up effect of the switching module 11 on the circuit, the discharge module 12 including the third MOS transistor M3, the fourth MOS transistor M4, the first resistor R1 and the second resistor R2 can ensure that the circuit can work normally even if the gate potentials of the first MOS transistor M1 and the second MOS transistor M2 are not constant during the power-on process. If the first MOS transistor M1 and the second MOS transistor M2 are not normally turned on, the output end potential is a low potential, so that the third MOS transistor M3 and the fourth MOS transistor M4 are turned on, and the gate potentials of the first MOS transistor M1 and the second MOS transistor M2 are pulled low, so that the first MOS transistor M1 and the second MOS transistor M2 are turned on, and thus the discharge module 12 releases the latch state of the switching module 11, and the switching module 11 returns to the normal working state.
In other embodiments, the first resistor R1 has a resistance of 1-2 Mega ohms.
Since the switching module 11 has the first resistor R1 and the second resistor R2 with proper resistance values, the current of the discharging module 12 can be proper in the discharging process of the MOS transistor gate of the switching module 11, the MOS transistor of the discharging module 12 is not damaged due to excessive instantaneous current, and the charge of the MOS transistor gate of the switching module 11 can be quickly released, so that the switching module 11 is recovered to be normal.
The embodiment of the invention also discloses a power supply change-over switch circuit, which comprises any one of the power supply change-over switches, and fig. 2 is a schematic structural diagram of the power supply change-over switch circuit provided by the embodiment of the invention; referring to fig. 2, the power switching circuit further includes:
a first substrate switching circuit 21, the first substrate switching circuit 21 including a first input terminal a1, a first power output terminal B1 and a first substrate voltage output terminal C1, the first power output terminal B1 being connected to the first power input terminal IN1, the first substrate voltage output terminal C1 being connected to the first substrate voltage input terminal CD 1;
and a second substrate switching circuit 22, the second substrate switching circuit 22 including a second input terminal a2, a second power output terminal B2, and a second substrate voltage output terminal C2, the second power output terminal B2 being connected to the second power input terminal, and the second substrate voltage output terminal C2 being connected to the second substrate voltage input terminal.
The conventional power supply switch circuit only has a switching module, and may be, for example, a structure in which drains of two PMOS transistors are connected to each other, that is, a circuit composed of a first MOS transistor M1 and a second MOS transistor M2, where source terminals of the two PMOS transistors are connected to two power supply input terminals, and drain terminals of the two PMOS transistors are connected together to form an output terminal. Since the PMOS transistor is generally built in the N-well layer, and the potential of the N-well layer needs to be connected to the highest potential of the chip to prevent the parasitic diode of the PMOS transistor from turning on. However, for a multi-power system or a complex power switching application scenario, the substrate of the power switch PMOS needs to be connected to different potentials according to requirements, and therefore, the PMOS transistor power switch circuit needs to realize connection of different potentials of the substrate.
Fig. 3 is a schematic structural diagram of a first substrate switching circuit according to an embodiment of the present invention. Referring to fig. 3, in other embodiments, the first substrate switching circuit includes a fifth MOS transistor M5, a sixth MOS transistor M6, a seventh MOS transistor M7, and an eighth MOS transistor M8;
a source electrode of the fifth MOS transistor M5 is connected with a source electrode of the sixth MOS transistor M6 and serves as a first input end a1, a source electrode of the seventh MOS transistor M7, a gate electrode of the fifth MOS transistor M5 and a gate electrode of the sixth MOS transistor M6 are connected and serve as a first output end, a substrate of the fifth MOS transistor M5, a drain electrode of the sixth MOS transistor M6 and a drain electrode of the seventh MOS transistor M7 are connected and serve as a first substrate voltage output end C1, a drain electrode of the fifth MOS transistor M5, a gate electrode of the seventh MOS transistor M7 and a drain electrode of the eighth MOS transistor M8 are connected, and a gate electrode of the eighth MOS transistor M8 is grounded;
the fifth MOS transistor M5, the sixth MOS transistor M6, and the seventh MOS transistor M7 are PMOS transistors, and the eighth MOS transistor M8 is an NMOS transistor.
The source of the eighth MOS transistor M8 is grounded, the gate of the eighth MOS transistor M8 is connected to a bias voltage providing terminal, which is used for providing a bias voltage to the gate, so that a target pull-down current is formed between the source and the drain of the eighth MOS transistor M8, and the specific magnitude of the target pull-down current can be determined by adjusting the magnitude of the bias voltage according to actual needs.
When the power voltage of the power supply connected to the first input terminal a1 is greater than the voltage of the first output terminal, the fifth MOS transistor M5 is turned on, and the gate potential of the seventh MOS transistor M7 is pulled high, so that the seventh MOS transistor M7 is turned off, the sixth MOS transistor M6 is turned on, and finally the potential of the first substrate voltage output terminal C1 is equal to the potential of the first input terminal a 1.
When the power voltage of the power supply connected to the first input terminal a1 is less than the voltage of the first output terminal, the fifth MOS transistor M5 is turned off, the gate potential of the seventh MOS transistor M7 is pulled low, so that the seventh MOS transistor M7 is turned on, the sixth MOS transistor M6 is turned off, and finally, the potential of the first substrate voltage output terminal C1 is equal to the potential of the first output terminal.
Therefore, the circuit can realize that the potential of the first substrate voltage output terminal C1 is always equal to the voltage of the power supply with higher potential.
With continued reference to fig. 2, in other embodiments, the second substrate switching circuit 22 is identical in composition and structure to the first substrate switching circuit 21.
The power supply switch is disposed outside the dashed line frame, the first substrate switching circuit 21 and the second substrate switching circuit 22 may have the same composition and structure, and when the first substrate switching circuit 21 and the second substrate switching circuit 22 have the same composition and structure, the parameters of the first substrate switching circuit 21 and the second substrate switching circuit 22 are the same.
In other embodiments, the first resistor R1 has the same resistance as the second resistor R2.
Since the resistance of the first resistor R1 is the same as the resistance of the second resistor R2, the uniformity of the parameters of the first substrate switching circuit 21 and the second substrate switching circuit 22 is higher.
In other embodiments, the gating signal of the first control terminal SW1 is a high-low signal.
In other embodiments, the gating signal of the second control terminal SW2 is a high-low signal.
Fig. 4 is a functional verification diagram of a power supply switch circuit according to an embodiment of the invention. See fig. 4, where the ordinate is voltage and the abscissa is time. The output end of the power supply changeover switch circuit can output the power supply voltage connected with the first power supply input end or the power supply voltage connected with the second power supply input end through the first control end and the second control end to select. When the first control end is at low level and the second control end is at high level, the output end of the power supply changeover switch circuit outputs the power supply voltage connected with the first power supply input end; when the first control end is at high level and the second control end is at low level, the output end of the power supply changeover switch circuit outputs the power supply voltage connected with the second power supply input end.
The embodiment of the invention also provides a chip which comprises the power supply changeover switch circuit. Therefore, the power supply stability and reliability of the chip are improved.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious modifications, rearrangements, combinations and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. A power transfer switch, comprising:
the switching module comprises a first control end, a second control end, a first power supply input end and a second power supply input end, and is used for switching a first power supply or a second power supply to output according to gating signals of the first control end and the second control end;
and the discharging module is used for grounding the first control end and the second control end when the output voltage of the switching module is zero.
2. The power supply changeover switch according to claim 1, wherein the switching module comprises a first MOS transistor, a second MOS transistor, a first substrate voltage input terminal and a second substrate voltage input terminal, and the discharging module comprises a third MOS transistor, a fourth MOS transistor, a first resistor and a second resistor;
the drain electrode of the first MOS tube, the drain electrode of the second MOS tube and the grid electrode of the fourth MOS tube are all connected with the grid electrode of the third MOS tube, and the grid electrode of the third MOS tube is used as the output end of the power supply switching circuit;
the source electrode of the third MOS tube is connected with the first end of the first resistor, the grid electrode of the first MOS tube is connected with the second end of the first resistor, the grid electrode of the first MOS tube is used as the first control end, and the source electrode of the first MOS tube is used as the first power supply input end; the substrate of the first MOS tube is used as the voltage input end of the first substrate; the source electrode of the fourth MOS tube is connected with the first end of the second resistor, the grid electrode of the second MOS tube is connected with the second end of the second resistor, the grid electrode of the second MOS tube is used as the second control end, and the source electrode of the second MOS tube is used as the second power supply input end; the substrate of the second MOS tube is used as the voltage input end of the second substrate; the first MOS tube, the second MOS tube, the third MOS tube and the fourth MOS tube are PMOS tubes.
3. The power switch of claim 2, wherein the first resistor has a resistance of 1-2 mega ohms.
4. A power supply changeover switch circuit comprising the power supply changeover switch according to any one of claims 1 to 3, further comprising:
a first substrate switching circuit, the first substrate switching circuit comprising a first input terminal, a first power supply output terminal and a first substrate voltage output terminal, the first power supply output terminal being connected to the first power supply input terminal, the first substrate voltage output terminal being connected to the first substrate voltage input terminal;
and the second substrate switching circuit comprises a second input end, a second power supply output end and a second substrate voltage output end, wherein the second power supply output end is connected with the second power supply input end, and the second substrate voltage output end is connected with the second substrate voltage input end.
5. The power switching switch circuit according to claim 4, wherein the first substrate switching circuit comprises a fifth MOS transistor, a sixth MOS transistor, a seventh MOS transistor and an eighth MOS transistor;
the source electrode of the fifth MOS tube is connected with the source electrode of the sixth MOS tube and serves as the first input end, the source electrode of the seventh MOS tube, the grid electrode of the fifth MOS tube and the grid electrode of the sixth MOS tube are connected and serve as the first output end, the substrate of the fifth MOS tube, the drain electrode of the sixth MOS tube and the drain electrode of the seventh MOS tube are connected and serve as the first substrate voltage output end, the drain electrode of the fifth MOS tube, the grid electrode of the seventh MOS tube and the drain electrode of the eighth MOS tube are connected, and the grid electrode of the eighth MOS tube is grounded;
the fifth MOS transistor, the sixth MOS transistor and the seventh MOS transistor are PMOS transistors, and the eighth MOS transistor is an NMOS transistor.
6. The power switching circuit according to claim 4, wherein the second substrate switching circuit is identical in composition and structure to the first substrate switching circuit.
7. The power switching switch circuit according to claim 4, wherein the first resistor has the same resistance as the second resistor.
8. The power switching circuit of claim 4, wherein the gating signal of the first control terminal is a high-low signal.
9. The power switching circuit of claim 4, wherein the gating signal of the second control terminal is a high-low signal.
10. A chip comprising a power supply changeover switch circuit according to any one of claims 4 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110648680.8A CN113346887B (en) | 2021-06-10 | Power supply change-over switch, power supply change-over switch circuit and chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110648680.8A CN113346887B (en) | 2021-06-10 | Power supply change-over switch, power supply change-over switch circuit and chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113346887A true CN113346887A (en) | 2021-09-03 |
| CN113346887B CN113346887B (en) | 2024-05-14 |
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| CN101247076A (en) * | 2008-03-01 | 2008-08-20 | 炬力集成电路设计有限公司 | Signal output equipment, charge pump, voltage doubler and method for outputting current |
| CN102064815A (en) * | 2009-11-18 | 2011-05-18 | 上海宏力半导体制造有限公司 | Latch-up resistant circuit |
| CN109599387A (en) * | 2017-09-30 | 2019-04-09 | 中芯国际集成电路制造(上海)有限公司 | ESD protection circuit and its structure and working method |
| WO2020125669A1 (en) * | 2018-12-20 | 2020-06-25 | 上海艾为电子技术股份有限公司 | Analog switch circuit and charge pump circuit |
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101247076A (en) * | 2008-03-01 | 2008-08-20 | 炬力集成电路设计有限公司 | Signal output equipment, charge pump, voltage doubler and method for outputting current |
| CN102064815A (en) * | 2009-11-18 | 2011-05-18 | 上海宏力半导体制造有限公司 | Latch-up resistant circuit |
| CN109599387A (en) * | 2017-09-30 | 2019-04-09 | 中芯国际集成电路制造(上海)有限公司 | ESD protection circuit and its structure and working method |
| WO2020125669A1 (en) * | 2018-12-20 | 2020-06-25 | 上海艾为电子技术股份有限公司 | Analog switch circuit and charge pump circuit |
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