CN113346870A - Multi-state single-stage broadband digital attenuator and multi-state multi-stage broadband digital attenuator - Google Patents

Multi-state single-stage broadband digital attenuator and multi-state multi-stage broadband digital attenuator Download PDF

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CN113346870A
CN113346870A CN202110900804.7A CN202110900804A CN113346870A CN 113346870 A CN113346870 A CN 113346870A CN 202110900804 A CN202110900804 A CN 202110900804A CN 113346870 A CN113346870 A CN 113346870A
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resistor
state
parallel
series
port
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CN113346870B (en
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张侨
陆建华
朱伟强
韩婷婷
田密
李志坚
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Shanghai Archiwave Electronic Technology Co ltd
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Nanjing Suirui Technology Co ltd
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00Networks using active elements
    • H03H11/02Multiple-port networks
    • H03H11/24Frequency-independent attenuators

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Abstract

The application discloses a multi-state single-stage broadband digital attenuator and a multi-state multi-stage broadband digital attenuator, and belongs to the field of microwave integrated circuits. The multi-state single-stage broadband digital attenuator comprises an input end, n parallel branches of a resistance attenuation network, m series branches and an output end; the resistance attenuation network is a pi-type attenuation network or a bridge T-type attenuation network or a T-type attenuation network; when the n parallel branches are all in a pass state and the m series branches are all in an open circuit state, the multi-state single-stage broadband digital attenuator is in an insertion loss state; when at least one parallel branch is in an open circuit state and the one-to-one corresponding serial branch is in a closed circuit state, the multi-state single-stage broadband digital attenuator is in an attenuation state. The application can ensure that each state of the multi-state single-stage broadband digital attenuator is equivalent to a pi-type attenuation network or a bridge T-type attenuation network or a T-type attenuation network, and each state is a 50-ohm matching system.

Description

Multi-state single-stage broadband digital attenuator and multi-state multi-stage broadband digital attenuator
Technical Field
The embodiment of the invention relates to the field of microwave integrated circuits, in particular to a multi-state single-stage broadband digital attenuator and a multi-state multi-stage broadband digital attenuator.
Background
The common topological structures of the digital attenuator comprise four types, namely a switch type topological structure, a T type topological structure, a bridge T type topological structure and a pi type topological structure, and different topological structures can be selected according to technical indexes and available device types to form the single-stage digital attenuator. The T-type, bridge T-type and pi-type topological structures have good symmetrical structures and high-frequency characteristics and have the characteristic of small size, so the three topological structures are commonly used in the design of a radio-frequency digital attenuator.
Fig. 1 shows a topology of a pi-type digital attenuator, which is composed of a R1 resistor, a R2 resistor and a R3 resistor, wherein the resistances of R2 and R3 are equal. If the reflection coefficient of the port of the 50 ohm system is desired to be the best, the absolute value S of the attenuation can be determined according to the port characteristics of the 50 ohm system and the required attenuation21Obtaining formulas (1) and (2), and calculating resistance values of R1, R2 and R3 according to the formulas (1) and (2), wherein R0 is characteristic impedance.
Figure 28886DEST_PATH_IMAGE002
(1)
Figure 241693DEST_PATH_IMAGE004
(2)
Figure 72114DEST_PATH_IMAGE006
(3)
The classical single-stage digital attenuator changes the resistance value of a resistor in a topological structure in a switch switching mode, so that an attenuation state and an insertion loss state are formed. The attenuation state and the insertion loss state are explained below by taking a pi-type digital attenuator as an example, and the design ideas of the T-type digital attenuator and the bridge T-type digital attenuator are consistent with those of the pi-type digital attenuator, and are not described in detail herein.
In fig. 2, a switching element is used to implement a classic single-stage pi-type digital attenuator, wherein the left-hand drawing shows that the pi-type digital attenuator is in an insertion loss state, and the right-hand drawing shows that the pi-type digital attenuator is in an attenuation state. In fig. 3, the switching element is a Metal-Oxide-Semiconductor (MOS) switch, and a gate of the MOS switch is connected to a high level H to indicate that the switch is on, and a gate of the MOS switch is connected to a low level L to indicate that the switch is off, and parasitic resistance and parasitic capacitance may exist in the on and off states of the switch. Wherein, the left side attached chart shows that the pi-type digital attenuator is in an insertion loss state, and the right side attached chart shows that the pi-type digital attenuator is in an attenuation state.
When the pi-type digital attenuator shown in fig. 2 is in an attenuation state, it may be equivalent to the resistance network shown in fig. 1, and the resistance value of the resistor formed by connecting the switch S2 and the resistor R2 in series, the resistance value of the resistor formed by connecting the switch S3 and the resistor R3 in series, and the resistance value of R1 are calculated according to equations (1) to (3), so that a certain attenuation amount can be realized while matching with the port of a 50 ohm system. When the pi-type digital attenuator shown IN fig. 2 is IN an insertion loss state, it may be equivalent to a parallel resistor of S1 and R1 connected IN series between the input IN and the output OUT, so that the source terminal and the load terminal of the 50 ohm system no longer form a 50 ohm system. If the on-resistance of M1 needs to be small enough to maintain good reflectance and insertion loss, the size of M1 is large enough and the parasitic capacitance of M1 is more significant. For a multi-stage digital attenuator, the more attenuation stages are connected in series, the larger the equivalent series resistance between the input and output in the insertion loss state, and the worse the reflection coefficient and the insertion loss. When each stage IN the multi-stage digital attenuator is IN an insertion loss state and an attenuation state or distribution, the front input port and the rear input port of each stage are no longer IN good 50-ohm impedance matching, and finally the bandwidth, the reflection coefficient, the insertion loss and the like between the input IN and the output OUT are all deteriorated.
Disclosure of Invention
The embodiment of the invention provides a multi-state single-stage broadband digital attenuator and a multi-state multi-stage broadband digital attenuator, which are used for solving the problem that the broadband digital attenuator does not meet impedance matching in an insertion loss state. The technical scheme is as follows:
in a first aspect, a multi-state single-stage broadband digital attenuator is provided, and comprises an input end, a resistance attenuation network, n parallel branches, m series branches and an output end, wherein the resistance attenuation network is a pi-type attenuation network or a bridge T-type attenuation network or a T-type attenuation network; n and m are both positive integers;
when the resistance attenuation network is the pi-type attenuation network, m =2n, and the resistance attenuation network includes a first resistor, a second resistor and a third resistor, the n parallel branches are respectively connected in parallel with the first resistor, n series branches of the m series branches are respectively connected in parallel with the second resistor, the rest n series branches are respectively connected in parallel with the third resistor, the first resistor is connected with the input end and the output end, one ends of the second resistor and the third resistor are respectively grounded, and the resistance values of the second resistor and the third resistor are equal;
when the resistance attenuation network is the bridge T-shaped attenuation network, m = n, the resistance attenuation network comprises a fourth resistor, a fifth resistor, a sixth resistor and a seventh resistor, the n parallel branches are respectively connected with the fourth resistor in parallel, the m series branches are respectively connected with the fifth resistor in parallel, the fourth resistor is respectively connected with the input end and the output end, one end of the fifth resistor is grounded, the sixth resistor and the seventh resistor are connected with the input end and the output end after being connected in series, and the resistance values of the sixth resistor and the seventh resistor are equal;
when the resistance attenuation network is the T-type attenuation network, n =2m, the resistance attenuation network includes an eighth resistor, a ninth resistor and a tenth resistor, m parallel branches of the n parallel branches are respectively connected in parallel with the eighth resistor, the rest m parallel branches are respectively connected in parallel with the ninth resistor, the m series branches are respectively connected in parallel with the tenth resistor, the eighth resistor and the ninth resistor are connected in series and then connected with the input end and the output end, one end of the tenth resistor is grounded, and the resistance values of the eighth resistor and the ninth resistor are equal;
when the n parallel branches are all in a pass state and the m series branches are all in an open circuit state, the multi-state single-stage broadband digital attenuator is in an insertion loss state;
when at least one of the parallel branches is in an open circuit state and the serial branches corresponding to one another are in a pass state, the multi-state single-stage broadband digital attenuator is in a specific attenuation state.
In an alternative embodiment, the parallel branch comprises a first switch with an on-resistance, or the parallel branch comprises a second switch with an equivalent resistance and no on-resistance connected in series; the series branch comprises an eleventh resistor and a third switch with an on-resistor which are connected in series.
In an optional embodiment, the resistance attenuation network is the pi-type attenuation network, and the m series branches include n first series branches and n second series branches;
a first port of the first resistor is connected with the input end, and a second port of the first resistor is connected with the output end;
a first port of the second resistor is connected with the input end, and a second port of the second resistor is grounded;
the first port of the third resistor is connected with the output end, and the second port of the third resistor is grounded;
a first port of the first series branch is connected with the input end, and a second port of the first series branch is grounded;
and the first port of the second series branch is connected with the output end, and the second port of the second series branch is grounded.
In an optional embodiment, when the k parallel branches are in an open circuit state, and the corresponding k first series branches and the corresponding k second series branches are in a pass state, the multi-state single-stage broadband digital attenuator is in a kth attenuation state, where k is a positive integer, and k is less than or equal to n.
In an alternative embodiment, the resistive attenuation network is the bridge T-shaped attenuation network;
a first port of the fourth resistor is connected with the input end, and a second port of the fourth resistor is connected with the output end;
a first port of the sixth resistor is connected with the input end, a second port of the sixth resistor is connected with a first port of the seventh resistor to form a first connection intersection point, and a second port of the seventh resistor is connected with the output end;
a first port of the fifth resistor is connected with the first connection intersection point, and a second port of the fifth resistor is grounded;
and a first port of the series branch is connected with the first connection intersection point, and a second port of the series branch is grounded.
In an optional embodiment, when k parallel branches are in an open circuit state and corresponding k series branches are in a pass state, the multi-state single-stage broadband digital attenuator is in a kth attenuation state, where k is a positive integer and k is less than or equal to n.
In an optional embodiment, the resistance attenuation network is the T-type attenuation network, and the n parallel branches include m first parallel branches and m second parallel branches;
a first port of the eighth resistor is connected with the input end, a second port of the eighth resistor is connected with a first port of the ninth resistor to form a second connection intersection point, and a second port of the ninth resistor is connected with the output end;
a first port of the tenth resistor is connected with the second connection intersection point, and a second port of the tenth resistor is grounded;
the first parallel branch circuits are respectively connected with the eighth resistors in parallel, and the second parallel branch circuits are respectively connected with the ninth resistors in parallel;
and the first port of the series branch is connected with the second connection intersection point, and the second port of the series branch is grounded.
In an optional embodiment, when the k first parallel branches and the k second parallel branches are in an open circuit state, and the corresponding k series branches are in a pass state, the multi-state single-stage broadband digital attenuator is in a kth attenuation state, where k is a positive integer, and k is less than or equal to n.
In an alternative embodiment, the first switch is a metal-oxide semiconductor switch or a bipolar junction transistor switch or a micro-electro-mechanical system switch; the second switch is a metal-oxide semiconductor switch or a bipolar junction transistor switch or a micro-electro-mechanical system switch; the third switch is a metal-oxide semiconductor switch or a bipolar junction transistor switch or a micro-electro-mechanical system switch.
In a second aspect, a multi-state multi-stage broadband digital attenuator is provided, and the multi-state multi-stage broadband digital attenuator comprises at least two cascaded multi-state single-stage broadband digital attenuators, and the multi-state single-stage broadband digital attenuator is the multi-state single-stage broadband digital attenuator.
The technical scheme provided by the embodiment of the invention has the beneficial effects that at least:
each parallel branch is connected with one resistor in parallel, and each series branch is connected with one resistor in parallel, so that the multi-state single-stage broadband digital attenuator can be controlled to be in an insertion loss state when n parallel branches are in a pass state and m series branches are in a break state; when at least one parallel branch is in an open circuit state and the one-to-one corresponding serial branches are in a pass state, the multi-state single-stage broadband digital attenuator is controlled to be in a specific attenuation state, and therefore state conversion of the broadband digital attenuator is achieved. In addition, as long as the serial branch and the parallel branch are reasonably controlled, each state of the multi-state single-stage broadband digital attenuator can be equal to a pi-type attenuation network or a bridge T-type attenuation network or a T-type attenuation network, and a 50-ohm matching system is satisfied in each state.
By controlling the number of the parallel branches in the open circuit state and the number of the series branches in the open circuit state, the multi-state single-stage broadband digital attenuator can be controlled to be in different attenuation states, that is, the multi-state single-stage broadband digital attenuator can be controlled to have different attenuation values.
The multi-state multi-stage broadband digital attenuator can be formed by at least two cascaded multi-state single-stage broadband digital attenuators, and one multi-state single-stage broadband digital attenuator can have different attenuation values, so that the number of the required multi-state single-stage broadband digital attenuators can be reduced, and the structure of the multi-state multi-stage broadband digital attenuator is simplified. In addition, each multi-state single-stage broadband digital attenuator is a 50-ohm matching system, so that each stage of the cascaded multi-state single-stage broadband digital attenuator is a broadband impedance matching system no matter in a plug-in loss state or an attenuation state, and has a good reflection coefficient.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic diagram of a prototype of a pi-type attenuator;
FIG. 2 is a schematic diagram of a prior art pi-type digital attenuator implemented as a classical single stage using switching elements;
FIG. 3 is a schematic diagram of a prior art implementation of a classic single-stage pi-type digital attenuator using MOS switches;
FIG. 4 is a schematic diagram of a multi-state single-stage broadband digital attenuator in one embodiment of the present invention;
FIG. 5 is a schematic diagram of a pi-type multi-state single-stage broadband digital attenuator in an insertion loss state according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a pi-type multi-state single-stage broadband digital attenuator in a first attenuation state, in accordance with an embodiment of the present invention;
FIG. 7 is a schematic diagram of a pi-type multi-state single-stage broadband digital attenuator in a second attenuation state, in accordance with an embodiment of the present invention;
FIG. 8 is a schematic diagram of a pi-type multi-state single-stage broadband digital attenuator in a third attenuation state, in accordance with an embodiment of the present invention;
FIG. 9 is a schematic diagram of a prototype of a bridge T-type attenuator;
fig. 10 is a schematic diagram of a bridge T-type multi-state single-stage broadband digital attenuator in an insertion loss state according to an embodiment of the present invention;
fig. 11 is a schematic diagram of a bridge T-type multi-state single-stage broadband digital attenuator in a first attenuation state according to an embodiment of the present invention;
fig. 12 is a schematic diagram of a bridge T-type multi-state single-stage broadband digital attenuator in a second attenuation state according to an embodiment of the present invention;
fig. 13 is a schematic diagram of a bridge T-type multi-state single-stage broadband digital attenuator in a third attenuation state according to an embodiment of the present invention;
FIG. 14 is a schematic diagram of a prototype of a T-type attenuator;
fig. 15 is a schematic diagram of a T-type multi-state single-stage broadband digital attenuator in an insertion loss state according to an embodiment of the present invention;
fig. 16 is a schematic diagram of a T-type multi-state single-stage broadband digital attenuator in a first attenuation state, in accordance with an embodiment of the present invention;
fig. 17 is a schematic diagram of a T-type multi-state single-stage broadband digital attenuator in a second attenuation state, in accordance with an embodiment of the present invention;
fig. 18 is a schematic diagram of a T-type multi-state single-stage broadband digital attenuator in a third attenuation state, in accordance with an embodiment of the present invention;
fig. 19 is a schematic diagram of a multi-state multi-stage wideband digital attenuator, in accordance with an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the embodiments of the present invention will be described in further detail with reference to the accompanying drawings.
The embodiment provides a multi-state single-stage broadband digital attenuator, which comprises an input end, a resistance attenuation network, n parallel branches, m series branches and an output end. The resistance attenuation network can be a pi-type attenuation network or a bridge T-type attenuation network or a T-type attenuation network, n and m are positive integers, and the values of n and m are related to the type of the resistance attenuation network.
When the resistance attenuation network is a pi-type attenuation network, m =2n, the resistance attenuation network comprises a first resistor, a second resistor and a third resistor, n parallel branches are respectively connected with the first resistor in parallel, n series branches in the m series branches are respectively connected with the second resistor in parallel, the rest n series branches are respectively connected with the third resistor in parallel, the first resistor is connected with an input end and an output end, one ends of the second resistor and the third resistor are respectively grounded, and the resistance values of the second resistor and the third resistor are equal;
when the resistance attenuation network is a bridge T-shaped attenuation network, m = n, the resistance attenuation network comprises a fourth resistor, a fifth resistor, a sixth resistor and a seventh resistor, n parallel branches are respectively connected with the fourth resistor in parallel, m series branches are respectively connected with the fifth resistor in parallel, the fourth resistor is respectively connected with an input end and an output end, one end of the fifth resistor is grounded, the sixth resistor and the seventh resistor are connected with the input end and the output end after being connected in series, and the resistance values of the sixth resistor and the seventh resistor are equal;
when the resistance attenuation network is a T-shaped attenuation network, n =2m, the resistance attenuation network comprises an eighth resistor, a ninth resistor and a tenth resistor, m parallel branches in the n parallel branches are respectively connected with the eighth resistor in parallel, the rest m parallel branches are respectively connected with the ninth resistor in parallel, m series branches are respectively connected with the tenth resistor in parallel, the eighth resistor and the ninth resistor are connected with the input end and the output end in series, one end of the tenth resistor is grounded, and the resistance values of the eighth resistor and the ninth resistor are equal.
When the n parallel branches are all in a pass state and the m series branches are all in an open circuit state, the multi-state single-stage broadband digital attenuator is in an insertion loss state; when at least one parallel branch is in an open circuit state and the one-to-one corresponding serial branch is in a closed circuit state, the multi-state single-stage broadband digital attenuator is in a specific attenuation state.
In an alternative embodiment, the parallel branch may comprise a first switch with an on-resistance, or the parallel branch may comprise a second switch with an equivalent resistance and no on-resistance in series. Among them, the first switch may be a MOS switch, a BJT (Bipolar Junction Transistor) switch, a MEMS (Micro Electro Mechanical Systems) switch, and the like, and the second switch may be a MOS switch, a BJT switch, a MEMS switch, and the like.
In an alternative embodiment, the series branch may comprise an eleventh resistor and a third switch with an on-resistance connected in series, i.e. the first port of the eleventh resistor is connected to the first port of the third switch. Wherein, the third switch can be a MOS switch, a BJT switch, a MEMS switch, and so on.
In summary, in the multi-state single-stage broadband digital attenuator of this embodiment, each parallel branch is connected in parallel with one resistor, and each series branch is connected in parallel with one resistor, so that when all n parallel branches are in the on state and all m series branches are in the off state, the multi-state single-stage broadband digital attenuator can be controlled to be in the insertion loss state; when at least one parallel branch is in an open circuit state and the one-to-one corresponding serial branches are in a pass state, the multi-state single-stage broadband digital attenuator is controlled to be in a specific attenuation state, and therefore state conversion of the broadband digital attenuator is achieved. In addition, as long as the serial branch and the parallel branch are reasonably controlled, each state of the multi-state single-stage broadband digital attenuator can be equal to a pi-type attenuation network or a bridge T-type attenuation network or a T-type attenuation network, and a 50-ohm matching system is satisfied in each state.
The resistance attenuation network can be a pi-type attenuation network or a bridge T-type attenuation network or a T-type attenuation network, and the structures of the multi-state single-stage broadband digital attenuator with the three network structures are respectively described below.
1) Pi-type attenuation network
The pi-type attenuation network comprises a first resistor, a second resistor and a third resistor, wherein a first port of the first resistor is connected with the input end, and a second port of the first resistor is connected with the output end; the first port of the second resistor is connected with the input end, and the second port of the second resistor is grounded; the first port of the third resistor is connected with the output end, and the second port of the third resistor is grounded.
In this implementation, each parallel branch is connected in parallel with a first resistor. Taking the example that the parallel branch comprises the first switch with the on-resistance, the first port of the first switch is connected to the input terminal, and the second port of the first switch is connected to the output terminal. The m series branches comprise n first series branches and n second series branches, a second port of an eleventh resistor in each first series branch is connected with the input end, a first port of the eleventh resistor is connected with a first port of a third switch, and a second port of the third switch is grounded; and a second port of an eleventh resistor in the second series branch is connected with the output end, a first port of the eleventh resistor is connected with a first port of a third switch, and a second port of the third switch is grounded.
It should be noted that the multi-state single-stage broadband digital attenuator has n attenuation states. Specifically, when k parallel branches are in an open circuit state, and the corresponding k first series branches and the corresponding k second series branches are in a pass state, the multi-state single-stage broadband digital attenuator is in a kth attenuation state, k is a positive integer, and k is less than or equal to n.
For the convenience of understanding, the multi-state single-stage broadband digital attenuator is described below by taking n =1 and n =3 as examples.
When n =1, please refer to fig. 4, R1 in fig. 4 represents a first resistor, R4 represents a second resistor, R5 represents a third resistor, R2 represents an eleventh resistor in the first series branch, R3 represents an eleventh resistor in the second series branch, S1 represents a first switch with an on-resistance, S2 represents a third switch in the first series branch, S3 represents a third switch in the second series branch, and S1 is connected in parallel with R1, R2 and S2 are connected in series and then connected in parallel with R4, and R3 and S3 are connected in series and then connected in parallel with R5.
a) When the parallel branch is in a pass state and the first series branch and the second series branch are in an open state, i.e., S1 is closed and S2 and S3 are open, the multi-state single-stage broadband digital attenuator is in an insertion loss state. At this time, (the resistor RT1 formed by connecting R1 and S1 in parallel), R4 and R5 are equivalent to a pi-type attenuation network together. Suppose it is a prioriIf the insertion loss value in the insertion loss state is set to IL, S in the equations (1) to (3)21For IL, the resistance value of R4 can be calculated according to formula (1), the resistance value of R5 can be calculated according to formula (2), and the resistance value of RT1 can be calculated according to formula (3).
b) When the parallel branch is in the open state and the first series branch and the second series branch are in the pass state, i.e., S1 is open and S2 and S3 are closed, the multi-state single-stage broadband digital attenuator is in the attenuation state. At this time, R1, a resistor RT2 formed by connecting R4 in parallel after R2 and S2 are connected in series, and a resistor RT3 formed by connecting R5 in parallel after R3 and S3 are connected in series are equivalent to a pi-type attenuation network together. Assuming that the insertion loss value in the insertion loss state set in advance is IL plus the relative attenuation value ATT of the current attenuation level, S in equations (1) to (3)21For IL + ATT, the resistance value of RT2 can be calculated according to equation (1), the resistance value of RT3 can be calculated according to equation (2), and the resistance value of R1 can be calculated according to equation (3).
From the resistance value of RT1 and the resistance value of R1, the resistance value at S1 closing time can be calculated, and the size of the S1 switching tube can be calculated from the resistance values. According to the resistance value of RT2 and the resistance value of R4, the resistance value of R2 and S2 after being connected in series can be calculated, and then the resistance values of R2 and S2 are determined according to comprehensive factors such as the value range, the area size and the manufacturing reliability of a process device. According to the resistance value of RT3 and the resistance value of R5, the resistance value of R3 and S3 after being connected in series can be calculated, and then the resistance values of R3 and S3 are determined according to comprehensive factors such as the value range, the area size and the manufacturing reliability of a process device.
It should be noted that, no matter in the insertion loss state or the attenuation state, the equivalent pi-type attenuation network of the multi-state single-stage broadband digital attenuator can satisfy the equations (1) - (3) at the same time, so that the multi-state single-stage broadband digital attenuator can satisfy the condition that each state is a 50 ohm matching system and has a good reflection coefficient.
When n =3, m =6, please refer to fig. 5-8, RS1 in fig. 5-8 represents a first resistor, RP7 represents a second resistor, RP8 represents a third resistor, RP1-3 represents an eleventh resistor in each first series branch, RP4-6 represents an eleventh resistor in each second series branch, SS1-3 represents a first switch with an on-resistance, SP1-3 represents a third switch in each first series branch, SP4-6 represents a third switch in each second series branch, and SS1-3 is in parallel with RS1, RP1 and SP1 in series, RP2 and SP2 in series, RP3 and SP3 in series and RP7 in series, RP4 and SP4 in series, RP5 and SP5 in series, RP6 and SP6 in series and 8 in series.
a) When the 3 parallel branches are in a pass state, and the 3 first series branches and the 3 second series branches are in an open state, namely the SS1-3 is closed, and the SP1-6 is opened, the multi-state single-stage broadband digital attenuator is in a loss-insertion state. At the moment, (the resistor RT4 formed by connecting RS1 and SS1-3 in parallel), RP7 and RP8 are equivalent to a pi-type attenuation network together. Assuming that the insertion loss value in the insertion loss state is set in advance to IL, S in equations (1) to (3)21For IL, the resistance value of RP7 can be calculated according to formula (1), the resistance value of RP8 can be calculated according to formula (2), and the resistance value of RT4 can be calculated according to formula (3).
b) When the 2 parallel branches, the 1 first series branch and the 1 second series branch are in a pass state, and the 1 parallel branch, the 2 first series branch and the 2 second series branches are in an open circuit state, namely, the SS1-2, the SP3 and the SP6 are closed, and the SP1-2, the SP4-5 and the SS3 are opened, the multi-state single-stage broadband digital attenuator is in a first attenuation state. At this time, (a resistor RT5 formed by connecting RS1 and SS1-2 in parallel), (a resistor RT6 formed by connecting RP3 and SP3 in series and then connecting RP7 in parallel), (a resistor RT7 formed by connecting RP6 and SP6 in series and then connecting RP8 in parallel) are equivalent to a pi-type attenuation network. Assuming that the insertion loss value in the insertion loss state set in advance is IL plus the relative attenuation ATT1 of the current attenuation level, S in equations (1) to (3)21For IL + ATT1, the resistance value of RT6 can be calculated according to equation (1), the resistance value of RT7 can be calculated according to equation (2), and the resistance value of RT5 can be calculated according to equation (3).
c) When 1 parallel branch, 2 first series branches and 2 second series branches are in a pass state,And when the 2 parallel branches, the 1 first series branch and the 1 second series branch are in the open circuit state, namely SS1, SP2-3 and SP5-6 are closed, and SP1, SP4 and SS2-3 are opened, the multi-state single-stage broadband digital attenuator is in a second attenuation state. At the moment, (a resistor RT8 formed by connecting RS1 and SS1 in parallel), (a resistor RT9 formed by connecting RP3 and SP3 in series, a resistor RP2 and SP2 in series and then connecting RP7 in parallel), (a resistor RT10 formed by connecting RP5 and SP5 in series, a resistor RP6 and SP6 in series and then connecting RP8 in parallel) are equivalent to a pi-type attenuation network. Assuming that the insertion loss value in the insertion loss state set in advance is IL plus the relative attenuation ATT2 of the current attenuation level, S in equations (1) to (3)21For IL + ATT2, the resistance value of RT9 can be calculated according to equation (1), the resistance value of RT10 can be calculated according to equation (2), and the resistance value of RT8 can be calculated according to equation (3).
d) When the 3 first series branches and the 3 second series branches are in a pass state and the 3 parallel branches are in an open circuit state, namely the SP1-6 is closed and the SS1-3 is open, the multi-state single-stage broadband digital attenuator is in a third attenuation state. At this time, RS1, (resistor RT12 formed by connecting RP3 and SP3 in series, connecting RP2 and SP2 in series, connecting RP1 and SP1 in series, and connecting RP7 in parallel), (resistor RT11 formed by connecting RP6 and SP6 in series, connecting RP5 and SP5 in series, and connecting RP4 and SP4 in series, and connecting RP8 in parallel) are equivalent to a pi-type attenuation network. Assuming that the insertion loss value in the insertion loss state set in advance is IL plus the relative attenuation ATT3 of the current attenuation level, S in equations (1) to (3)21For IL + ATT3, the resistance value of RT11 can be calculated according to equation (1), the resistance value of RT12 can be calculated according to equation (2), and the resistance value of RS1 can be calculated according to equation (3).
Since RT4 represents the resistance formed by RS1 connected with SS1-3 in parallel, RT5 represents the resistance formed by RS1 connected with SS1-2 in parallel, RT8 represents the resistance formed by RS1 connected with SS1 in parallel, and the resistance value of RS1 has been calculated, the resistance values when SS1, SS2 and SS3 are closed can be calculated respectively, so that the sizes of SS1, SS2 and SS3 switching tubes are calculated respectively according to the corresponding resistance values. Similarly, the resistance values of RP1 and SP1 in series, RP2 and SP2 in series, RP3 and SP3 in series, RP4 and SP4 in series, RP5 and SP5 in series and RP6 and SP6 in series can be respectively calculated, and the resistance values of RP1-6 and SP1-6 can be determined according to the comprehensive factors such as the value range, the area size and the manufacturing reliability of the process devices.
2) Bridge T-shaped attenuation network
The bridge T-shaped attenuation network comprises a fourth resistor, a fifth resistor, a sixth resistor and a seventh resistor, at the moment, a first port of the fourth resistor is connected with the input end, and a second port of the fourth resistor is connected with the output end; a first port of the sixth resistor is connected with the input end, a second port of the sixth resistor is connected with a first port of the seventh resistor to form a first connection intersection point, and a second port of the seventh resistor is connected with the output end; and a first port of the fifth resistor is connected with the first connection intersection point, and a second port of the fifth resistor is grounded. Referring to fig. 9, in fig. 9, R1 represents a fourth resistor, R2 represents a fifth resistor, Z0 represents a sixth resistor, and Z1 represents a seventh resistor. Wherein the resistances of Z0 and Z1 are equal and known.
In this implementation, the parallel branches are connected in parallel with the fourth resistors, respectively. Taking the example that the parallel branch comprises the first switch with the on-resistance, the first port of the first switch is connected to the input terminal, and the second port of the first switch is connected to the output terminal. The first port of the series branch is connected with the first connection intersection point, and the second port of the series branch is grounded.
It should be noted that the multi-state single-stage broadband digital attenuator has n attenuation states. Specifically, when k parallel branches are in an open circuit state and corresponding k series branches are in a closed circuit state, the multi-state single-stage broadband digital attenuator is in a kth attenuation state, k is a positive integer, and k is less than or equal to n.
For the convenience of understanding, the multi-state single-stage broadband digital attenuator is described below by taking n =3 as an example.
Referring to fig. 10-13, RS1 in fig. 10-13 represents a fourth resistor, RP4 represents a fifth resistor, RP1-3 represents an eleventh resistor in each series branch, Z0 represents a sixth resistor, Z1 represents a seventh resistor, SS1-3 represents a first switch with an on-resistance, SP1-3 represents a third switch in each series branch, and SS1-3 is connected in parallel with RS1, series RP1 and SP1, series RP2 and SP2, series RP3 and SP3 are connected in parallel with RP 4.
a) When the 3 parallel branches are in a pass state and the 3 series branches are in an open state, namely SS1-3 is closed and SP1-3 is opened, the multi-state single-stage broadband digital attenuator is in an insertion loss state. At the moment, the resistor RT13 formed by connecting the RS1 and the SS1-3 in parallel, the Z0, the Z1 and the RP4 are equivalent to a bridge T-shaped attenuation network together. Assuming that the insertion loss value in the insertion loss state is set in advance to IL, S in equations (4) and (5)21For IL, the resistance value of RP4 can be calculated according to equation (4), and the resistance value of RT13 can be calculated according to equation (5). Wherein, the formula (4) is
Figure 672860DEST_PATH_IMAGE008
The formula (5) is
Figure 339464DEST_PATH_IMAGE009
b) When the 2 parallel branches and the 1 series branch are in a pass state and the 1 parallel branch and the 2 series branches are in an open state, namely SS1-2 and SP3 are closed and SP1-2 and SS3 are opened, the multi-state single-stage broadband digital attenuator is in a first attenuation state. At the moment, (a resistor RT14 formed by connecting RS1 and SS1-2 in parallel), Z0, Z1, (a resistor RT15 formed by connecting RP3 and SP3 in series and connecting RP4 in parallel) are equivalent to a bridge T-shaped attenuation network. Assuming that the insertion loss value in the insertion loss state set in advance is IL plus the relative attenuation value ATT1 of the current attenuation level, S in equations (4) and (5)21For IL + ATT1, the resistance value of RT15 can be calculated according to equation (4), and the resistance value of RT14 can be calculated according to equation (5).
c) When the 1 parallel branch and the 2 series branches are in a pass state and the 2 parallel branches and the 1 series branch are in an open state, namely the SS1 and the SP2-3 are closed and the SP1 and the SS2-3 are opened, the multi-state single-stage broadband digital attenuator is in a second attenuation state. At this time, (a resistor RT16 formed by connecting RS1 and SS1 in parallel), Z0, Z1, and,(the resistor RT17 formed by connecting RP3 and SP3 in series and connecting RP2 and SP2 in series and connecting RP4 in parallel) together is equivalent to a bridge T-shaped attenuation network. Assuming that the insertion loss value in the insertion loss state set in advance is IL plus the relative attenuation value ATT2 of the current attenuation level, S in equations (4) and (5)21For IL + ATT2, the resistance value of RT17 can be calculated according to equation (4), and the resistance value of RT16 can be calculated according to equation (5).
d) When the 3 serial branches are in a pass state and the 3 parallel branches are in an open state, namely the SP1-3 is closed and the SS1-3 is opened, the multi-state single-stage broadband digital attenuator is in a third attenuation state. At the moment, RS1, Z0, Z1, (resistor RT18 formed by connecting RP3 and SP3 in series, RP2 and SP2 in series, and RP1 and SP1 in series and connecting RP4 in parallel) are equivalent to a bridge T-shaped attenuation network. Assuming that the insertion loss value in the insertion loss state set in advance is IL plus the relative attenuation value ATT3 of the current attenuation level, S in equations (4) and (5)21For IL + ATT3, the resistance value of RT18 can be calculated according to equation (4), and the resistance value of RS1 can be calculated according to equation (5).
Since RT13 represents the resistance formed by RS1 connected with SS1-3 in parallel, RT14 represents the resistance formed by RS1 connected with SS1-2 in parallel, RT16 represents the resistance formed by RS1 connected with SS1 in parallel, and the resistance value of RS1 has been calculated, the resistance values when SS1, SS2 and SS3 are closed can be calculated respectively, so that the sizes of SS1, SS2 and SS3 switching tubes are calculated respectively according to the corresponding resistance values. Similarly, the resistance values of RP1 and SP1 in series connection, RP2 and SP2 in series connection and RP3 and SP3 in series connection can be respectively calculated, and the resistance values of RP1-3 and SP1-3 can be determined according to the comprehensive factors of the value range, the area size, the manufacturing reliability and the like of the process device.
3) T-shaped attenuation network
The T-type attenuation network comprises an eighth resistor, a ninth resistor and a tenth resistor, at the moment, a first port of the eighth resistor is connected with the input end, a second port of the eighth resistor is connected with a first port of the ninth resistor to form a second connection intersection point, and a second port of the ninth resistor is connected with the output end; and a first port of the tenth resistor is connected with the second connection intersection point, and a second port of the tenth resistor is grounded.
In this implementation, the n parallel branches include m first parallel branches and m second parallel branches, each of the first parallel branches is connected in parallel with the eighth resistor, and each of the second parallel branches is connected in parallel with the ninth resistor. Namely, a first port of the first parallel branch is connected with the input end, and a second port of the first parallel branch is connected with the second connection intersection point; and a first port of the second parallel branch is connected with the second connection intersection point, and a second port of the second parallel branch is connected with the output end. The first port of the series branch is connected with the second connection intersection point, and the second port of the series branch is grounded.
It should be noted that the multi-state single-stage broadband digital attenuator has n attenuation states. Specifically, when the k first parallel branches and the k second parallel branches are in an open circuit state and the corresponding k series branches are in a pass state, the multi-state single-stage broadband digital attenuator is in a kth attenuation state, k is a positive integer, and k is not more than n.
For the convenience of understanding, the multi-state single-stage broadband digital attenuator is described below by taking n =3 as an example.
Referring to fig. 15-18, RS1 in fig. 15-18 represents an eighth resistor, RS2 represents a ninth resistor, RP4 represents a tenth resistor, RP1-3 represents an eleventh resistor in each series branch, respectively, SS1-3 represents a first switch with on-resistance in each first parallel branch, SS4-6 represents a first switch with on-resistance in each second parallel branch, SP1-3 represents a third switch in each series circuit, respectively, and SS1-3 is connected in parallel with RS1, SS4-6 is connected in parallel with RS2, series RP1 and SP1, series RP2 and SP2, series RP3 and SP3 are connected in parallel with RP 4. Wherein the resistance values of RS1 and RS2 are equal.
a) When the 3 first parallel branches and the 3 second parallel branches are in a pass state, and the 3 series branches are in an open circuit state, namely SS1-6 is closed, and SP1-3 is opened, the multi-state single-stage broadband digital attenuator is in an insertion loss state. At the moment, (the resistor RT19 formed by connecting RS1 and SS1-3 in parallel), (the resistor RT20 formed by connecting RS2 and SS4-6 in parallel), and RP4 are equivalent to a T-shaped attenuation net togetherLinking the collaterals. Assuming that the insertion loss value in the insertion loss state is set in advance to IL, S in equations (6) to (8)21For IL, the resistance value of RP4 can be calculated according to formula (6), the resistance value of RT19 can be calculated according to formula (7), and the resistance value of RT20 can be calculated according to formula (8). Wherein, the formula (6) is
Figure 605230DEST_PATH_IMAGE010
Formula (7) is
Figure DEST_PATH_IMAGE011
Formula (8) is
Figure DEST_PATH_IMAGE013
b) When the 2 first parallel branches, the 2 second parallel branches and the 1 series branch are in a pass state, and the 1 first parallel branch, the 1 second parallel branch and the 2 series branches are in an open circuit state, namely the SS1-2, the SS4-5 and the SP3 are closed, and the SP1-2, the SS3 and the SS6 are opened, the multi-state single-stage broadband digital attenuator is in a first attenuation state. At the moment, (a resistor RT21 formed by connecting RS1 and SS1-2 in parallel), (a resistor RT22 formed by connecting RS2 and SS4-5 in parallel), (a resistor RT23 formed by connecting RP3 and SP3 in series and connecting RP4 in parallel) are equivalent to a T-shaped attenuation network. Assuming that the insertion loss value in the insertion loss state set in advance is IL plus the relative attenuation ATT1 of the current attenuation level, S in equations (6) to (8)21For IL + ATT1, the resistance value of RT23 can be calculated according to equation (6), the resistance value of RT21 can be calculated according to equation (7), and the resistance value of RT22 can be calculated according to equation (8).
c) When the 1 first parallel branch, the 1 second parallel branch and the 2 series branches are in a pass state, and the 2 first parallel branches, the 2 second parallel branches and the 1 series branch are in an open circuit state, namely the SS1, the SS4 and the SP2-3 are closed, and the SP1, the SS2-3 and the SS5-6 are opened, the multi-state single-stage broadband digital attenuator is in a second attenuation state. At this time, (resistor RT24 formed by parallel connection of RS1 and SS 1), (resistor RT25 formed by parallel connection of RS2 and SS 4), (RP 3 and SP3 seriesAnd after the series connection, the resistor RT26 formed by connecting RP2 and SP2 in series and connecting RP4 in parallel) together is equivalent to a T-shaped attenuation network. Assuming that the insertion loss value in the insertion loss state set in advance is IL plus the relative attenuation ATT2 of the current attenuation level, S in equations (6) to (8)21For IL + ATT2, the resistance value of RT26 can be calculated according to equation (6), the resistance value of RT24 can be calculated according to equation (7), and the resistance value of RT25 can be calculated according to equation (8).
d) When the 3 serial branches are in a pass state, the 3 first parallel branches and the 3 second parallel branches are in an open circuit state, namely the SP1-3 is closed, and the SS1-6 is opened, the multi-state single-stage broadband digital attenuator is in a third attenuation state. At this time, RS1, RS2, (resistor RT27 formed by connecting RP3 and SP3 in series, RP2 and SP2 in series, and RP1 and SP1 in series and connecting RP4 in parallel) are equivalent to a T-type attenuation network. Assuming that the insertion loss value in the insertion loss state set in advance is IL plus the relative attenuation ATT3 of the current attenuation level, S in equations (6) to (8)21For IL + ATT3, the resistance value of RT27 can be calculated according to equation (6), the resistance value of RS1 can be calculated according to equation (7), and the resistance value of RS2 can be calculated according to equation (8).
Since RT19 represents the resistance formed by RS1 connected with SS1-3 in parallel, RT21 represents the resistance formed by RS1 connected with SS1-2 in parallel, RT24 represents the resistance formed by RS1 connected with SS1 in parallel, and the resistance value of RS1 has been calculated, the resistance values when SS1, SS2 and SS3 are closed can be calculated respectively, so that the sizes of SS1, SS2 and SS3 switching tubes are calculated respectively according to the corresponding resistance values. Similarly, the resistance values of RP1 and SP1 in series connection, RP2 and SP2 in series connection and RP3 and SP3 in series connection can be respectively calculated, and the resistance values of RP1-3 and SP1-3 can be determined according to the comprehensive factors of the value range, the area size, the manufacturing reliability and the like of the process device.
One embodiment of the present application provides a multi-state multi-stage broadband digital attenuator, which includes at least two cascaded multi-state single-stage broadband digital attenuators, where the multi-state single-stage broadband digital attenuator is the multi-state single-stage broadband digital attenuator shown in fig. 4-8, fig. 10-13, and fig. 15-18.
As each state of the multi-state single-stage broadband digital attenuator can be equal to a pi-type attenuation network or a bridge T-type attenuation network or a T-type attenuation network by reasonably controlling the serial branch and the parallel branch, and each state is a 50-ohm matching system, each stage of the cascaded multi-state single-stage broadband digital attenuator is a broadband impedance matching system no matter in an insertion loss state or an attenuation state, and the bandwidth and the reflection coefficient between input and output can be kept to the maximum extent.
Because the multi-state single-stage broadband digital attenuator can have different attenuation values, compared with the digital attenuator in the prior art, fewer stages can be adopted when the same attenuation range is realized, and therefore the influence caused by parasitic resistance and parasitic capacitance generated between the stages is reduced.
For the convenience of understanding, the attenuation range of the multi-state multi-stage broadband digital attenuator is exemplified as 0.0dB to 7.5 dB. If the digital attenuator with 0.5dB step shown in fig. 2 is used, four digital attenuators need to be cascaded, as shown in (a) original scheme in fig. 19; if the multi-state single-stage broadband digital attenuator with 0.5dB step is implemented as shown in this embodiment, two multi-state single-stage broadband digital attenuators need to be cascaded, as shown in the new scheme (b) in fig. 19.
The above description should not be taken as limiting the embodiments of the invention, and any modifications, equivalents, improvements and the like which are within the spirit and principle of the embodiments of the invention should be included in the scope of the embodiments of the invention.

Claims (10)

1. The polymorphic single-stage broadband digital attenuator is characterized by comprising an input end, a resistance attenuation network, n parallel branches, m series branches and an output end, wherein the resistance attenuation network is a pi-type attenuation network or a bridge T-type attenuation network or a T-type attenuation network; n and m are both positive integers;
when the resistance attenuation network is the pi-type attenuation network, m =2n, and the resistance attenuation network includes a first resistor, a second resistor and a third resistor, the n parallel branches are respectively connected in parallel with the first resistor, n series branches of the m series branches are respectively connected in parallel with the second resistor, the rest n series branches are respectively connected in parallel with the third resistor, the first resistor is connected with the input end and the output end, one ends of the second resistor and the third resistor are respectively grounded, and the resistance values of the second resistor and the third resistor are equal;
when the resistance attenuation network is the bridge T-shaped attenuation network, m = n, the resistance attenuation network comprises a fourth resistor, a fifth resistor, a sixth resistor and a seventh resistor, the n parallel branches are respectively connected with the fourth resistor in parallel, the m series branches are respectively connected with the fifth resistor in parallel, the fourth resistor is respectively connected with the input end and the output end, one end of the fifth resistor is grounded, the sixth resistor and the seventh resistor are connected with the input end and the output end after being connected in series, and the resistance values of the sixth resistor and the seventh resistor are equal;
when the resistance attenuation network is the T-type attenuation network, n =2m, the resistance attenuation network includes an eighth resistor, a ninth resistor and a tenth resistor, m parallel branches of the n parallel branches are respectively connected in parallel with the eighth resistor, the rest m parallel branches are respectively connected in parallel with the ninth resistor, the m series branches are respectively connected in parallel with the tenth resistor, the eighth resistor and the ninth resistor are connected in series and then connected with the input end and the output end, one end of the tenth resistor is grounded, and the resistance values of the eighth resistor and the ninth resistor are equal;
when the n parallel branches are all in a pass state and the m series branches are all in an open circuit state, the multi-state single-stage broadband digital attenuator is in an insertion loss state;
when at least one of the parallel branches is in an open circuit state and the serial branches corresponding to one another are in a pass state, the multi-state single-stage broadband digital attenuator is in a specific attenuation state.
2. A multi-state single-stage broadband digital attenuator according to claim 1,
the parallel branch comprises a first switch with an on-resistance, or the parallel branch comprises an equivalent resistance and a second switch without the on-resistance which are connected in series;
the series branch comprises an eleventh resistor and a third switch with an on-resistor which are connected in series.
3. The multi-state single-stage broadband digital attenuator according to claim 1 or 2, wherein the resistive attenuation network is the pi-type attenuation network, and the m series branches comprise n first series branches and n second series branches;
a first port of the first resistor is connected with the input end, and a second port of the first resistor is connected with the output end;
a first port of the second resistor is connected with the input end, and a second port of the second resistor is grounded;
the first port of the third resistor is connected with the output end, and the second port of the third resistor is grounded;
a first port of the first series branch is connected with the input end, and a second port of the first series branch is grounded;
and the first port of the second series branch is connected with the output end, and the second port of the second series branch is grounded.
4. A multi-state single-stage broadband digital attenuator according to claim 3,
when the k parallel branches are in an open circuit state, and the corresponding k first series branches and the corresponding k second series branches are in a pass state, the multi-state single-stage broadband digital attenuator is in a kth attenuation state, wherein k is a positive integer, and k is less than or equal to n.
5. The multi-state single-stage broadband digital attenuator of claim 1 or 2, wherein the resistive attenuation network is the bridge T-type attenuation network;
a first port of the fourth resistor is connected with the input end, and a second port of the fourth resistor is connected with the output end;
a first port of the sixth resistor is connected with the input end, a second port of the sixth resistor is connected with a first port of the seventh resistor to form a first connection intersection point, and a second port of the seventh resistor is connected with the output end;
a first port of the fifth resistor is connected with the first connection intersection point, and a second port of the fifth resistor is grounded;
and a first port of the series branch is connected with the first connection intersection point, and a second port of the series branch is grounded.
6. A multi-state single-stage broadband digital attenuator according to claim 5,
when the k parallel branches are in an open circuit state and the corresponding k series branches are in a pass state, the multi-state single-stage broadband digital attenuator is in a kth attenuation state, k is a positive integer and is less than or equal to n.
7. The multi-state single-stage broadband digital attenuator according to claim 1 or 2, wherein the resistive attenuation network is the T-type attenuation network, and the n parallel branches comprise m first parallel branches and m second parallel branches;
a first port of the eighth resistor is connected with the input end, a second port of the eighth resistor is connected with a first port of the ninth resistor to form a second connection intersection point, and a second port of the ninth resistor is connected with the output end;
a first port of the tenth resistor is connected with the second connection intersection point, and a second port of the tenth resistor is grounded;
the first parallel branch circuits are respectively connected with the eighth resistors in parallel, and the second parallel branch circuits are respectively connected with the ninth resistors in parallel;
and the first port of the series branch is connected with the second connection intersection point, and the second port of the series branch is grounded.
8. A multi-state single-stage broadband digital attenuator according to claim 7,
when the k first parallel branches and the k second parallel branches are in an open circuit state and the corresponding k series branches are in a pass state, the multi-state single-stage broadband digital attenuator is in a kth attenuation state, wherein k is a positive integer and is not more than n.
9. A multi-state single-stage broadband digital attenuator according to claim 2,
the first switch is a metal-oxide semiconductor switch or a bipolar junction transistor switch or a micro-electro-mechanical system switch;
the second switch is a metal-oxide semiconductor switch or a bipolar junction transistor switch or a micro-electro-mechanical system switch;
the third switch is a metal-oxide semiconductor switch or a bipolar junction transistor switch or a micro-electro-mechanical system switch.
10. A multi-state multi-stage broadband digital attenuator, characterized in that the multi-state multi-stage broadband digital attenuator comprises at least two cascaded multi-state single-stage broadband digital attenuators, and the multi-state single-stage broadband digital attenuator is the multi-state single-stage broadband digital attenuator according to any one of claims 1 to 9.
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