JP4789873B2

JP4789873B2 - Attenuators and electronic devices

Info

Publication number: JP4789873B2
Application number: JP2007160201A
Authority: JP
Inventors: 善之畑; 慎中西
Original assignee: Advantest Corp
Current assignee: Advantest Corp
Priority date: 2007-06-18
Filing date: 2007-06-18
Publication date: 2011-10-12
Anticipated expiration: 2027-06-18
Also published as: JP2008312121A

Description

本発明は、減衰器および電子デバイスに関する。特に本発明は、周波数特性に優れ、高耐電力、高減衰を実現する減衰器および電子デバイスに関する。 The present invention relates to an attenuator and an electronic device. In particular, the present invention relates to an attenuator and an electronic device that have excellent frequency characteristics and realize high power resistance and high attenuation.

半導体集積回路装置等の電子デバイスを試験する試験装置では、当該電子デバイスの機能試験、性能試験または耐電流もしくは耐電圧等の限界試験等、多くの試験項目に対応することが要請される。このため試験装置の試験端子から被試験デバイスに出力する試験信号あるいは被試験デバイスから入力される応答信号を減衰してまたは減衰せずに出力または入力したいことがある。よって、電子デバイスの試験装置には、試験端子等に適用できる適切な減衰器を備えることが要請される。 A test apparatus for testing an electronic device such as a semiconductor integrated circuit device is required to cope with many test items such as a function test, a performance test, and a limit test such as a withstand voltage or a withstand voltage. For this reason, it may be desired to output or input a test signal output from the test terminal of the test apparatus to the device under test or a response signal input from the device under test with or without attenuation. Therefore, it is required that a test apparatus for an electronic device includes an appropriate attenuator that can be applied to a test terminal or the like.

たとえば特許文献１は、基板上に複数の抵抗体を配置して直列に接続するπ型回路のチップ型抵抗器を開示する。当該文献には、各抵抗体の接続部に電極を設けることにより、実装面積を少なくして配線による浮遊キャパシタを低減すると共に高周波特性を改善できることが記載されている。
特開平５−２５８９２４号公報 For example, Patent Document 1 discloses a π-type circuit chip resistor in which a plurality of resistors are arranged on a substrate and connected in series. This document describes that by providing an electrode at the connection portion of each resistor, the mounting area can be reduced, the floating capacitor by wiring can be reduced, and the high frequency characteristics can be improved.
JP-A-5-258924

しかし、電子デバイスを試験する試験装置における減衰器には、電子デバイスの応答周波数と同等もしくはそれ以上の周波数特性が期待される。また、高い耐電圧試験および耐電流試験を実現するには、大きな電力の入力信号に対応できる減衰器が要請される。さらに、減衰器本来に期待される性能として、高い減衰率が期待される。 However, an attenuator in a test apparatus for testing an electronic device is expected to have a frequency characteristic equal to or higher than the response frequency of the electronic device. Further, in order to realize a high withstand voltage test and withstand current test, an attenuator capable of handling an input signal with a large power is required. Furthermore, a high attenuation factor is expected as the performance expected from the attenuator.

上記課題を解決するために、本発明の第１の形態においては、基板上に設けられた減衰器であって、信号の入力側の第１接点とグランドとの間に設けられた第１配線抵抗と、第１接点より信号の出力側の第２接点とグランドとの間に設けられた第２配線抵抗と、第１接点および第２接点の間に設けられた第３配線抵抗と、を備え、第１配線抵抗は、第２配線抵抗と比較して断面積が大きい、減衰器が提供される。 In order to solve the above-described problem, according to a first embodiment of the present invention, there is provided an attenuator provided on a substrate, the first wiring provided between the first contact on the signal input side and the ground. A resistance, a second wiring resistance provided between the second contact on the signal output side of the first contact and the ground, and a third wiring resistance provided between the first contact and the second contact. An attenuator is provided in which the first wiring resistance has a larger cross-sectional area than the second wiring resistance.

なお、上記の発明の概要は、本発明の必要な特徴の全てを列挙したものではない。また、これらの特徴群のサブコンビネーションもまた、発明となりうる。 It should be noted that the above summary of the invention does not enumerate all the necessary features of the present invention. In addition, a sub-combination of these feature groups can also be an invention.

以下、発明の実施の形態を通じて本発明を説明するが、以下の実施形態は特許請求の範囲にかかる発明を限定するものではない。また、実施形態の中で説明されている特徴の組み合わせの全てが発明の解決手段に必須であるとは限らない。 Hereinafter, the present invention will be described through embodiments of the invention, but the following embodiments do not limit the invention according to the claims. In addition, not all the combinations of features described in the embodiments are essential for the solving means of the invention.

図１は、減衰器１００のレイアウトの一例を示す。減衰器１００は、基板１０２上に設けられ、入力側配線抵抗１０４と、出力側配線抵抗１０６と、中間配線抵抗１０８と、入力側配線１２０と、出力側配線１２２と、入力側接地配線１２４と、出力側接地配線１２６とを備える。 FIG. 1 shows an example of the layout of the attenuator 100. The attenuator 100 is provided on the substrate 102, and includes an input side wiring resistance 104, an output side wiring resistance 106, an intermediate wiring resistance 108, an input side wiring 120, an output side wiring 122, and an input side ground wiring 124. , And output side ground wiring 126.

基板１０２は、半導体基板上にシリコン酸化膜もしくはシリコン窒化膜等の誘電体薄膜を堆積したものであってよく、あるいはセラミックス等の絶縁体基板であってもよい。誘電体薄膜の下層の半導体基板上には、トランジスタ等の電子デバイスが形成されてもよい。 The substrate 102 may be obtained by depositing a dielectric thin film such as a silicon oxide film or a silicon nitride film on a semiconductor substrate, or may be an insulating substrate such as ceramics. An electronic device such as a transistor may be formed on the semiconductor substrate below the dielectric thin film.

入力側配線抵抗１０４は、第１接点の一例である入力側配線１２０とグランドの一例である入力側接地配線１２４との間に設けられた第１配線抵抗の一例である。入力側配線抵抗１０４は、基板１０２上に堆積した抵抗材料膜をパターニングして形成できる。入力側配線抵抗１０４は、材料の抵抗率と幾何学的形状とで抵抗値が決定される。入力側配線抵抗１０４の幾何学的形状は、抵抗材料膜の膜厚とパターニング後の線幅および長さとで規定される。 The input-side wiring resistance 104 is an example of a first wiring resistance provided between an input-side wiring 120 that is an example of a first contact and an input-side ground wiring 124 that is an example of ground. The input-side wiring resistor 104 can be formed by patterning a resistive material film deposited on the substrate 102. The resistance value of the input side wiring resistance 104 is determined by the resistivity and geometric shape of the material. The geometric shape of the input-side wiring resistor 104 is defined by the thickness of the resistive material film and the line width and length after patterning.

入力側配線抵抗１０４の材料として、ニッケル−クロム合金、タングステンまたは不純物がドープされた多結晶シリコン等が例示できる。抵抗材料膜の堆積法として、スパッタリング法、蒸着法、化学気相成長法等が例示できる。抵抗材料膜のパターン形成方法として、レジスト塗布後にパターンマスクを適用した光露光および現像によって当該レジストをパターニングして、さらにレジストパターンをマスクとしたケミカルエッチングまたはドライエッチングによるパターニング方法を例示できる。 Examples of the material for the input-side wiring resistor 104 include nickel-chromium alloy, tungsten, or polycrystalline silicon doped with impurities. Examples of the deposition method of the resistive material film include a sputtering method, a vapor deposition method, and a chemical vapor deposition method. Examples of the pattern forming method for the resistive material film include a patterning method by chemical etching or dry etching using the resist pattern as a mask by patterning the resist by light exposure and development using a pattern mask after applying the resist.

出力側配線抵抗１０６は、第２接点の一例である出力側配線１２２とグランドの一例である出力側接地配線１２６との間に設けられた第２配線抵抗の一例である。出力側配線抵抗１０６は、入力側配線抵抗１０４と同様に、基板１０２上に堆積した抵抗材料膜をパターニングして形成できる。出力側配線抵抗１０６の抵抗値が材料の抵抗率と幾何学的形状とで決定されること、および幾何学的形状が抵抗材料膜の膜厚とパターニング後の線幅および長さとで規定されることは、入力側配線抵抗１０４の場合と同様であってよい。出力側配線抵抗１０６の材料および代表的な作成方法は入力側配線抵抗１０４と同様であってよい。 The output-side wiring resistance 106 is an example of a second wiring resistance provided between an output-side wiring 122 that is an example of a second contact and an output-side ground wiring 126 that is an example of ground. Similarly to the input-side wiring resistor 104, the output-side wiring resistor 106 can be formed by patterning a resistive material film deposited on the substrate 102. The resistance value of the output side wiring resistor 106 is determined by the resistivity and geometric shape of the material, and the geometric shape is defined by the film thickness of the resistive material film and the line width and length after patterning. This may be the same as in the case of the input side wiring resistor 104. The material of the output side wiring resistor 106 and a typical production method may be the same as those of the input side wiring resistor 104.

中間配線抵抗１０８は、入力側配線１２０および出力側配線１２２の間に設けられた第３配線抵抗の一例である。中間配線抵抗１０８は、入力側配線抵抗１０４と同様に、基板１０２上に堆積した抵抗材料膜をパターニングして形成できる。中間配線抵抗１０８の抵抗値が材料の抵抗率と幾何学的形状とで決定されること、および幾何学的形状が抵抗材料膜の膜厚とパターニング後の線幅および長さとで規定されることは、入力側配線抵抗１０４等の場合と同様であってよい。中間配線抵抗１０８の材料および代表的な作成方法は入力側配線抵抗１０４等と同様であってよい。 The intermediate wiring resistance 108 is an example of a third wiring resistance provided between the input side wiring 120 and the output side wiring 122. The intermediate wiring resistor 108 can be formed by patterning a resistive material film deposited on the substrate 102, similarly to the input-side wiring resistor 104. The resistance value of the intermediate wiring resistor 108 is determined by the resistivity and geometric shape of the material, and the geometric shape is defined by the film thickness of the resistive material film and the line width and length after patterning. May be the same as in the case of the input-side wiring resistor 104 or the like. The material of the intermediate wiring resistor 108 and a typical production method may be the same as those of the input-side wiring resistor 104 and the like.

入力側配線１２０は、信号の入力端として配置され、入力側配線抵抗１０４と中間配線抵抗１０８とを接続する接点として機能する。入力側配線１２０は、信号の入力側に配置される。入力側配線１２０は、基板１０２上に堆積した導電材料膜をパターニングして形成できる。入力側配線１２０のパターニング方法は、入力側配線抵抗１０４等と同様であってよい。入力側配線１２０の材料として、金、銅等の導電率の高い金属材料が例示できる。 The input-side wiring 120 is disposed as a signal input end, and functions as a contact for connecting the input-side wiring resistance 104 and the intermediate wiring resistance 108. The input-side wiring 120 is disposed on the signal input side. The input-side wiring 120 can be formed by patterning a conductive material film deposited on the substrate 102. The patterning method of the input side wiring 120 may be the same as that of the input side wiring resistance 104 and the like. Examples of the material of the input-side wiring 120 include metal materials having high conductivity such as gold and copper.

出力側配線１２２は、信号の出力端として配置され、出力側配線抵抗１０６と中間配線抵抗１０８とを接続する接点として機能する。出力側配線１２２は、入力側配線１２０より信号の出力側に配置される。出力側配線１２２は、基板１０２上に堆積した導電材料膜をパターニングして形成できる。出力側配線１２２の材料および代表的な作成方法は入力側配線１２０と同様であってよい。 The output side wiring 122 is disposed as a signal output end and functions as a contact point for connecting the output side wiring resistance 106 and the intermediate wiring resistance 108. The output side wiring 122 is arranged on the signal output side from the input side wiring 120. The output side wiring 122 can be formed by patterning a conductive material film deposited on the substrate 102. The material of the output side wiring 122 and a typical production method may be the same as those of the input side wiring 120.

入力側接地配線１２４および出力側接地配線１２６は、入力側配線１２０等と同様の材料および方法で作成されるが、その電位は接地電位（グランド）に維持される。よって入力側接地配線１２４および出力側接地配線１２６は、入力側配線抵抗１０４および出力側配線抵抗１０６の一端を接地する接点としてのグランドの一例である。入力側接地配線１２４および出力側接地配線１２６は、基板１０２上に堆積した導電材料膜をパターニングして形成できる。 The input-side ground wiring 124 and the output-side ground wiring 126 are made of the same material and method as the input-side wiring 120 and the like, but their potentials are maintained at the ground potential (ground). Therefore, the input-side ground wiring 124 and the output-side ground wiring 126 are an example of a ground as a contact for grounding one end of the input-side wiring resistance 104 and the output-side wiring resistance 106. The input side ground wiring 124 and the output side ground wiring 126 can be formed by patterning a conductive material film deposited on the substrate 102.

図２は、減衰器１００のＡ−Ａ線断面を示す。本実施形態において、入力側配線抵抗１０４および出力側配線抵抗１０６は、同じ膜厚で基板１０２上に形成される。すなわち、第１配線抵抗の一例である入力側配線抵抗１０４および第２配線抵抗の一例である出力側配線抵抗１０６の厚さが等しい。そして入力側配線抵抗１０４は線幅ｄ１１を有すると共に、出力側配線抵抗１０６は線幅ｄ１１より小さい線幅ｄ１２を有する。すなわち、第１配線抵抗の一例である入力側配線抵抗１０４は、第２配線抵抗の一例である出力側配線抵抗１０６と比較して断面積が大きい。 FIG. 2 shows a cross section of the attenuator 100 taken along the line AA. In this embodiment, the input side wiring resistor 104 and the output side wiring resistor 106 are formed on the substrate 102 with the same film thickness. That is, the thicknesses of the input-side wiring resistance 104 that is an example of the first wiring resistance and the output-side wiring resistance 106 that is an example of the second wiring resistance are equal. The input side wiring resistance 104 has a line width d11, and the output side wiring resistance 106 has a line width d12 smaller than the line width d11. That is, the input side wiring resistance 104 that is an example of the first wiring resistance has a larger cross-sectional area than the output side wiring resistance 106 that is an example of the second wiring resistance.

ここで断面積は、配線抵抗に流れる電流の方向に垂直な断面での面積を意味する。入力側配線抵抗１０４の断面積が出力側配線抵抗１０６の断面積より大きいので、入力側配線抵抗１０４には出力側配線抵抗１０６より多くの電流を流すことができる。減衰器１００の減衰率を大きく設計する場合、入力側配線抵抗１０４の抵抗値に比較して中間配線抵抗１０８の抵抗値が大きくなる。入力信号として１Ｗ程度の大きな電力の信号が入力されると、入力側配線抵抗１０４には大きな電流が流れることになる。しかし、本実施形態の減衰器１００では入力側配線抵抗１０４に大きな電流を流すことができるので、大きな減衰率と大電力入力の両方に対応することができる。 Here, the cross-sectional area means an area in a cross section perpendicular to the direction of the current flowing through the wiring resistance. Since the cross-sectional area of the input-side wiring resistor 104 is larger than the cross-sectional area of the output-side wiring resistor 106, more current can flow through the input-side wiring resistor 104 than the output-side wiring resistor 106. When the attenuation factor of the attenuator 100 is designed to be large, the resistance value of the intermediate wiring resistor 108 is larger than the resistance value of the input-side wiring resistor 104. When a signal with a large power of about 1 W is input as an input signal, a large current flows through the input side wiring resistor 104. However, since the attenuator 100 of the present embodiment can flow a large current through the input-side wiring resistor 104, it can cope with both a large attenuation factor and a large power input.

図３は、減衰器１００の等価回路を負荷抵抗ＲＬとともに示す。信号の入力端ＩＮは信号を受信する。入力端ＩＮは接点１５０に接続され、接点１５０は、抵抗Ｒｉｎと抵抗Ｒｍとを接続する。抵抗Ｒｉｎは入力側配線抵抗１０４であってよく、抵抗Ｒｍは中間配線抵抗１０８であってよい。 FIG. 3 shows an equivalent circuit of the attenuator 100 together with the load resistance RL. The signal input terminal IN receives the signal. The input terminal IN is connected to the contact 150, and the contact 150 connects the resistor Rin and the resistor Rm. The resistor Rin may be the input-side wiring resistor 104, and the resistor Rm may be the intermediate wiring resistor 108.

接点１５０の出力側には接点１５２が配置され、接点１５２は、抵抗Ｒｏｕｔと抵抗Ｒｍとを接続する。抵抗Ｒｏｕｔは出力側配線抵抗１０６であってよい。接点１５２は、信号の出力端ＯＵＴに接続され、出力端ＯＵＴは負荷抵抗ＲＬに接続される。なお、ここでは負荷として純抵抗の負荷抵抗ＲＬを例示しているが、値が複素数で表されるインピーダンスであってもよい。 A contact 152 is disposed on the output side of the contact 150, and the contact 152 connects the resistor Rout and the resistor Rm. The resistor Rout may be the output side wiring resistor 106. The contact 152 is connected to the signal output terminal OUT, and the output terminal OUT is connected to the load resistor RL. In addition, although load resistance RL of pure resistance is illustrated here as a load, the impedance whose value is represented by a complex number may be used.

上記の通り、本実施形態の減衰器１００は、入力側配線抵抗１０４、出力側配線抵抗１０６および中間配線抵抗１０８を含むπ型回路になる。入力側配線抵抗１０４、出力側配線抵抗１０６および中間配線抵抗１０８のそれぞれは、等価回路における抵抗Ｒｉｎ、抵抗Ｒｏｕｔおよび抵抗Ｒｍとなる。 As described above, the attenuator 100 according to this embodiment is a π-type circuit including the input-side wiring resistance 104, the output-side wiring resistance 106, and the intermediate wiring resistance 108. Each of the input side wiring resistance 104, the output side wiring resistance 106, and the intermediate wiring resistance 108 becomes the resistance Rin, the resistance Rout, and the resistance Rm in the equivalent circuit.

減衰率を２０ｄＢとする場合、Ｒｉｎ、ＲｍおよびＲｏｕｔの各抵抗の抵抗値は、各々６１．１Ω、２４７．５Ωおよび６１．１Ωになる。１Ｗの入力信号が入力された場合、負荷抵抗ＲＬを５０Ωと仮定すると、Ｒｉｎ、ＲｍおよびＲｏｕｔの各抵抗で消費される電力は、各々０．８１８Ｗ、０．１６４Ｗおよび０．００８Ｗ、各抵抗に流れる電流は、各々０．１１６Ａ、０．０２６Ａおよび０．０１２Ａになる。各抵抗に流すことが可能な許容電流として１ｍＡ／１μｍのルールを適用すると、入力側配線抵抗１０４、中間配線抵抗１０８および出力側配線抵抗１０６の設計線幅は各々１２０μｍ、３０μｍおよび１２μｍにできる。配線抵抗材料のシート抵抗として７３Ω／□を仮定すると、入力側配線抵抗１０４、中間配線抵抗１０８および出力側配線抵抗１０６の長さは各々１００．５μｍ、１０１．７μｍおよび１０．１μｍになる。 When the attenuation factor is 20 dB, the resistance values of the Rin, Rm, and Rout resistors are 61.1Ω, 247.5Ω, and 61.1Ω, respectively. When a 1 W input signal is input, assuming that the load resistance RL is 50 Ω, the power consumed by the Rin, Rm and Rout resistors is 0.818 W, 0.164 W and 0.008 W, respectively. The flowing currents are 0.116A, 0.026A and 0.012A, respectively. When the rule of 1 mA / 1 μm is applied as the allowable current that can flow through each resistor, the design line widths of the input-side wiring resistance 104, the intermediate wiring resistance 108, and the output-side wiring resistance 106 can be 120 μm, 30 μm, and 12 μm, respectively. Assuming that the sheet resistance of the wiring resistance material is 73Ω / □, the lengths of the input side wiring resistance 104, the intermediate wiring resistance 108, and the output side wiring resistance 106 are 100.5 μm, 101.7 μm, and 10.1 μm, respectively.

上記の通り、入力側配線抵抗１０４の長さ１００．５μｍと比較して中間配線抵抗１０８の長さは１０１．７μｍと同等になる。よって、入力端ＩＮおよび出力端ＯＵＴ間の周波数特性は特に悪化せず、良好な周波数特性を実現できる。また、入力側配線抵抗１０４および出力側配線抵抗１０６の膜厚は等しく、その線幅は各々１２０μｍおよび１２μｍとその比がほぼ１０になるから、入力側配線抵抗１０４および出力側配線抵抗１０６の断面積の比もほぼ１０になる。 As described above, the length of the intermediate wiring resistor 108 is equal to 101.7 μm compared to the length of the input wiring resistance 104 of 100.5 μm. Therefore, the frequency characteristic between the input terminal IN and the output terminal OUT is not particularly deteriorated, and a good frequency characteristic can be realized. Further, the input side wiring resistor 104 and the output side wiring resistor 106 have the same film thickness, and the line widths thereof are 120 μm and 12 μm, respectively, and the ratio thereof is approximately 10, so that the input side wiring resistor 104 and the output side wiring resistor 106 are disconnected. The area ratio is also approximately 10.

一方、信号の出力端ＯＵＴとグランドとの間に予め規定されたインピーダンスの回路である負荷抵抗ＲＬが接続された場合における入力側配線抵抗１０４および出力側配線抵抗１０６に流れる電流の比はほぼ１０になる。よって、入力側配線抵抗１０４および出力側配線抵抗１０６の断面積の比と、信号の出力端ＯＵＴとグランドとの間に負荷抵抗ＲＬが接続された場合における入力側配線抵抗１０４および出力側配線抵抗１０６に流れる電流の比は実質的に等しいといえる。 On the other hand, when a load resistor RL, which is a circuit having a predetermined impedance, is connected between the signal output terminal OUT and the ground, the ratio of the currents flowing through the input-side wiring resistor 104 and the output-side wiring resistor 106 is approximately 10. become. Therefore, the ratio of the cross-sectional area of the input side wiring resistance 104 and the output side wiring resistance 106 and the input side wiring resistance 104 and the output side wiring resistance when the load resistance RL is connected between the signal output terminal OUT and the ground. It can be said that the ratio of the currents flowing through 106 is substantially equal.

従って、本実施形態の減衰器１００は、入力側配線抵抗１０４および出力側配線抵抗１０６の断面積の比を流れる電流の比と実質的に同じとすることにより、各抵抗で消費される電力に応じた断面積を確保して、大きな電力の入力信号に対応できる。なお、各配線抵抗の膜厚が等しい場合には、断面積の比に代えて線幅の比が流れる電流の比と実質的に同じとなる。 Therefore, the attenuator 100 according to the present embodiment can reduce the power consumed by each resistor by making the ratio of the current flowing through the ratio of the cross-sectional areas of the input-side wiring resistor 104 and the output-side wiring resistor 106 substantially the same. A corresponding cross-sectional area can be ensured to cope with a large power input signal. In addition, when the film thickness of each wiring resistance is equal, it replaces with the ratio of a cross-sectional area, and the ratio of the line width becomes substantially the same as the ratio of the flowing current.

以上説明の通り、本実施形態の減衰器１００では、入力側配線抵抗１０４の断面積を出力側配線抵抗１０６の断面積より大きくする。また、入力側配線抵抗１０４と出力側配線抵抗１０６の断面積の比を、入力側配線抵抗１０４と出力側配線抵抗１０６に流れる電流の比と実質的に等しくする。この結果、大きな減衰率を要求される場合においても、大電力の入力信号に対応できる。また、２０ｄＢ程度の減衰率においては周波数特性を良好に維持できる。 As described above, in the attenuator 100 of this embodiment, the cross-sectional area of the input-side wiring resistance 104 is made larger than the cross-sectional area of the output-side wiring resistance 106. Further, the ratio of the cross-sectional areas of the input side wiring resistance 104 and the output side wiring resistance 106 is made substantially equal to the ratio of the current flowing through the input side wiring resistance 104 and the output side wiring resistance 106. As a result, even when a large attenuation rate is required, it is possible to cope with a high power input signal. Also, the frequency characteristics can be maintained satisfactorily at an attenuation factor of about 20 dB.

図４は、減衰器１００の変形例である減衰器２００のレイアウトの一例を示す。減衰器２００は、基板１０２上に設けられ、入力側配線抵抗２０４と、出力側配線抵抗１０６と、中間配線抵抗１０８と、入力側配線２２０と、出力側配線１２２と、入力側接地配線２２４と、出力側接地配線１２６とを備える。基板１０２と、出力側配線抵抗１０６と、中間配線抵抗１０８と、出力側配線１２２と、出力側接地配線１２６とは、減衰器１００の場合と同様であるから説明を省略する。 FIG. 4 shows an example of the layout of an attenuator 200 that is a modification of the attenuator 100. The attenuator 200 is provided on the substrate 102, and includes an input side wiring resistance 204, an output side wiring resistance 106, an intermediate wiring resistance 108, an input side wiring 220, an output side wiring 122, and an input side ground wiring 224. , And output side ground wiring 126. The substrate 102, the output-side wiring resistor 106, the intermediate wiring resistor 108, the output-side wiring 122, and the output-side ground wiring 126 are the same as in the case of the attenuator 100, and thus description thereof is omitted.

入力側配線抵抗２０４は、第１接点の一例である入力側配線２２０とグランドの一例である入力側接地配線２２４との間に設けられた第１配線抵抗の一例である。入力側配線２２０および入力側接地配線２２４は、減衰器１００の入力側配線１２０および入力側接地配線１２４と同様であるが、入力側配線抵抗２０４の線幅の変更に伴いサイズの変更を施している。 The input side wiring resistance 204 is an example of a first wiring resistance provided between an input side wiring 220 that is an example of a first contact and an input side ground wiring 224 that is an example of a ground. The input-side wiring 220 and the input-side ground wiring 224 are the same as the input-side wiring 120 and the input-side ground wiring 124 of the attenuator 100, but the size is changed in accordance with the change of the line width of the input-side wiring resistance 204. Yes.

入力側配線抵抗２０４の材料は、減衰器１００の入力側配線抵抗１０４と同様であるが、膜厚が厚く形成される点が相違する。入力側配線抵抗２０４の形成方法として、減衰器１００の場合と同様に抵抗材料膜の堆積およびそのパターニングが例示できる。ただし、減衰器２００の場合、入力側配線抵抗２０４となる領域を厚く形成するので、所定の膜厚の抵抗材料膜を堆積した後に、出力側配線抵抗１０６となる領域をマスクして入力側配線抵抗２０４となる領域にさらに追加の抵抗材料膜を堆積することができる。 The material of the input-side wiring resistance 204 is the same as that of the input-side wiring resistance 104 of the attenuator 100, but is different in that it is formed thick. As a method for forming the input-side wiring resistor 204, the deposition of a resistive material film and its patterning can be exemplified as in the case of the attenuator 100. However, in the case of the attenuator 200, since the region that becomes the input side wiring resistance 204 is formed thickly, the region that becomes the output side wiring resistance 106 is masked after depositing a resistance material film having a predetermined thickness. An additional resistive material film can be deposited in the region that will become the resistor 204.

図５は、減衰器２００のＢ−Ｂ線断面を示す。入力側配線抵抗２０４は、出力側配線抵抗１０６よりも厚く形成される。図示する例では、入力側配線抵抗２０４の膜厚は出力側配線抵抗１０６の膜厚のほぼ２倍となる。 FIG. 5 shows a cross section of the attenuator 200 along the line BB. The input side wiring resistance 204 is formed thicker than the output side wiring resistance 106. In the illustrated example, the film thickness of the input side wiring resistor 204 is approximately twice the film thickness of the output side wiring resistor 106.

以上の通り、本変形例の減衰器２００では、入力側配線抵抗２０４と出力側配線抵抗１０６の膜厚は相違する。減衰器２００では、入力側配線抵抗２０４の膜厚を厚くしているので、入力側配線抵抗２０４の線幅ｄ２１を細くできる。この結果、減衰器２００の形成面積を小さくして小型化できる。また、入力側配線抵抗２０４を小型化することにより、減衰器２００の周波数特性をよくすることができる。 As described above, in the attenuator 200 of this modification, the film thicknesses of the input-side wiring resistance 204 and the output-side wiring resistance 106 are different. In the attenuator 200, since the film thickness of the input side wiring resistance 204 is increased, the line width d21 of the input side wiring resistance 204 can be reduced. As a result, the formation area of the attenuator 200 can be reduced and the size can be reduced. Further, the frequency characteristics of the attenuator 200 can be improved by reducing the size of the input side wiring resistor 204.

図６は、減衰器１００の第２変形例である減衰器３００のレイアウトの一例を示す。減衰器３００は、基板１０２上に設けられ、入力側配線抵抗３０４と、出力側配線抵抗１０６と、中間配線抵抗１０８と、入力側付加配線抵抗３１０と、入力側配線３２０と、出力側配線１２２と、入力側接地配線３２４と、出力側接地配線１２６と、入力側付加接地配線３２８とを備える。基板１０２と、出力側配線抵抗１０６と、中間配線抵抗１０８と、出力側配線１２２と、出力側接地配線１２６とは減衰器１００の場合と同様であるから説明を省略する。 FIG. 6 shows an example of the layout of an attenuator 300 that is a second modification of the attenuator 100. The attenuator 300 is provided on the substrate 102, and includes an input side wiring resistance 304, an output side wiring resistance 106, an intermediate wiring resistance 108, an input side additional wiring resistance 310, an input side wiring 320, and an output side wiring 122. An input-side ground wiring 324, an output-side ground wiring 126, and an input-side additional ground wiring 328. Since the substrate 102, the output side wiring resistor 106, the intermediate wiring resistor 108, the output side wiring 122, and the output side ground wiring 126 are the same as those of the attenuator 100, description thereof is omitted.

入力側配線抵抗３０４は、第１接点の一例である入力側配線３２０とグランドの一例である入力側接地配線３２４との間に設けられた第１配線抵抗の一例である。また、入力側付加配線抵抗３１０は、第１接点の一例である入力側配線３２０とグランドの一例である入力側付加接地配線３２８との間に設けられた第４配線抵抗の一例である。入力側配線３２０および入力側接地配線３２４は、減衰器１００の入力側配線１２０および入力側接地配線１２４と同様であるが、入力側配線抵抗３０４の線幅の変更に伴いサイズの変更を施している。また、入力側配線３２０は入力側付加配線抵抗３１０を接続する。入力側付加接地配線３２８は、入力側付加配線抵抗３１０の付加に伴い追加された接地配線であって、入力側付加配線抵抗３１０の一端を接地する。 The input-side wiring resistance 304 is an example of a first wiring resistance provided between an input-side wiring 320 that is an example of a first contact and an input-side ground wiring 324 that is an example of ground. The input side additional wiring resistance 310 is an example of a fourth wiring resistance provided between the input side wiring 320 that is an example of the first contact and an input side additional ground wiring 328 that is an example of the ground. The input-side wiring 320 and the input-side ground wiring 324 are the same as the input-side wiring 120 and the input-side ground wiring 124 of the attenuator 100, but the size is changed in accordance with the change in the line width of the input-side wiring resistance 304. Yes. The input side wiring 320 is connected to the input side additional wiring resistance 310. The input side additional ground wiring 328 is a ground wiring added with the addition of the input side additional wiring resistance 310, and grounds one end of the input side additional wiring resistance 310.

減衰器３００では、入力側配線抵抗３０４および入力側付加配線抵抗３１０は入力端とグランドとの間に並列に配置される。そして入力側配線抵抗３０４および入力側付加配線抵抗３１０の断面積の和は、出力側配線抵抗１０６の断面積と比較して大きい。このように入力側配線抵抗３０４および入力側付加配線抵抗３１０の断面積の和を出力側配線抵抗１０６の断面積と比較して大きくすることにより、減衰器３００を減衰器１００と同様に機能させることができる。 In the attenuator 300, the input side wiring resistance 304 and the input side additional wiring resistance 310 are arranged in parallel between the input terminal and the ground. The sum of the cross-sectional areas of the input-side wiring resistance 304 and the input-side additional wiring resistance 310 is larger than the cross-sectional area of the output-side wiring resistance 106. As described above, the sum of the cross-sectional areas of the input-side wiring resistance 304 and the input-side additional wiring resistance 310 is made larger than the cross-sectional area of the output-side wiring resistance 106, so that the attenuator 300 functions similarly to the attenuator 100. be able to.

減衰器３００は、入力側配線抵抗３０４および入力側付加配線抵抗３１０を入力端とグランドとの間に並列に配置する。このため、減衰器１００の入力側配線抵抗１０４と比較して抵抗値を２倍にできる。つまり入力側配線抵抗１０４と比較して線幅を半分にできる。この結果、入力側配線抵抗３０４および入力側付加配線抵抗３１０を小型化して周波数特性を向上できる。 In the attenuator 300, the input side wiring resistance 304 and the input side additional wiring resistance 310 are arranged in parallel between the input end and the ground. For this reason, compared with the input side wiring resistance 104 of the attenuator 100, a resistance value can be doubled. That is, the line width can be halved compared to the input side wiring resistance 104. As a result, the input side wiring resistance 304 and the input side additional wiring resistance 310 can be downsized to improve the frequency characteristics.

上記の通り、本変形例に係る減衰器３００では、中間配線抵抗１０８に沿った軸を対称軸として入力側配線抵抗３０４および入力側接地配線３２４の対称な位置に入力側付加配線抵抗３１０および入力側付加接地配線３２８を付加する。入力側付加配線抵抗３１０および入力側付加接地配線３２８の付加に加えて、出力側配線抵抗１０６および出力側接地配線１２６の前記対称位置に出力側付加配線抵抗および出力側付加接地配線を付加するＨ型回路も例示できる。 As described above, in the attenuator 300 according to this modification, the input-side additional wiring resistance 310 and the input are arranged at symmetrical positions of the input-side wiring resistance 304 and the input-side ground wiring 324 with the axis along the intermediate wiring resistance 108 as the axis of symmetry. Side additional ground wiring 328 is added. In addition to the addition of the input side additional wiring resistance 310 and the input side additional ground wiring 328, the output side additional wiring resistance and the output side additional ground wiring are added to the symmetrical positions of the output side wiring resistance 106 and the output side ground wiring 126. A type circuit can also be illustrated.

図７は、減衰器１００の第３変形例である減衰器４００のレイアウトの一例を示す。減衰器４００は、基板１０２上に設けられ、前段Ｐのπ型回路および後段Ｓのπ型回路を備える。前段Ｐのπ型回路は、入力側配線抵抗１０４、出力側配線抵抗１０６、中間配線抵抗１０８、入力側配線１２０、出力側配線１２２、入力側接地配線１２４および出力側接地配線１２６を有する。後段Ｓのπ型回路は、入力側配線抵抗４１２、出力側配線抵抗４１４、中間配線抵抗４１６、入力側配線４３０、出力側配線４３２、入力側接地配線４３４および出力側接地配線４３６を有する。基板１０２と、前段Ｐのπ型回路は、減衰器１００と同様であるから説明を省略する。 FIG. 7 shows an example of the layout of an attenuator 400 that is a third modification of the attenuator 100. The attenuator 400 is provided on the substrate 102 and includes a π-type circuit at the front stage P and a π-type circuit at the rear stage S. The π-type circuit of the previous stage P includes an input side wiring resistance 104, an output side wiring resistance 106, an intermediate wiring resistance 108, an input side wiring 120, an output side wiring 122, an input side ground wiring 124, and an output side ground wiring 126. The π-type circuit in the subsequent stage S includes an input side wiring resistance 412, an output side wiring resistance 414, an intermediate wiring resistance 416, an input side wiring 430, an output side wiring 432, an input side ground wiring 434, and an output side ground wiring 436. Since the substrate 102 and the π-type circuit of the previous stage P are the same as those of the attenuator 100, the description thereof is omitted.

入力側配線抵抗４１２は、第３接点の一例である入力側配線４３０とグランドの一例である入力側接地配線４３４との間に設けられた第５配線抵抗の一例である。出力側配線抵抗４１４は、第４接点の一例である出力側配線４３２とグランドの一例である出力側接地配線４３６との間に設けられた第６配線抵抗の一例である。中間配線抵抗４１６は、入力側配線４３０および出力側配線４３２の間に設けられた第７配線抵抗の一例である。 The input side wiring resistance 412 is an example of a fifth wiring resistance provided between an input side wiring 430 that is an example of a third contact and an input side ground wiring 434 that is an example of ground. The output-side wiring resistance 414 is an example of a sixth wiring resistance provided between an output-side wiring 432 that is an example of a fourth contact and an output-side ground wiring 436 that is an example of ground. The intermediate wiring resistance 416 is an example of a seventh wiring resistance provided between the input side wiring 430 and the output side wiring 432.

入力側配線抵抗４１２、出力側配線抵抗４１４および中間配線抵抗４１６は、基板１０２上に堆積した抵抗材料膜をパターニングして形成できる。入力側配線抵抗４１２、出力側配線抵抗４１４および中間配線抵抗４１６の抵抗値が材料の抵抗率と幾何学的形状とで決定されること、および幾何学的形状が抵抗材料膜の膜厚とパターニング後の線幅および長さとで規定されることは、入力側配線抵抗１０４等の場合と同様であってよい。入力側配線抵抗４１２、出力側配線抵抗４１４および中間配線抵抗４１６の材料および代表的な作成方法は入力側配線抵抗１０４等と同様であってよい。 The input wiring resistance 412, the output wiring resistance 414, and the intermediate wiring resistance 416 can be formed by patterning a resistance material film deposited on the substrate 102. The resistance values of the input-side wiring resistance 412, the output-side wiring resistance 414, and the intermediate wiring resistance 416 are determined by the material resistivity and the geometric shape, and the geometric shape is determined by the film thickness and patterning of the resistive material film. What is defined by the subsequent line width and length may be the same as in the case of the input-side wiring resistance 104 or the like. The materials of the input-side wiring resistance 412, the output-side wiring resistance 414, and the intermediate wiring resistance 416 and a typical production method may be the same as those of the input-side wiring resistance 104 and the like.

入力側配線４３０は、第２接点の一例である出力側配線１２２より信号の出力側に配置される第３接点の一例である。入力側配線４３０は、前段Ｐの出力側配線１２２と接続され、出力側配線１２２と一体に形成される。入力側配線４３０は、第２接点の一例である出力側配線１２２の出力側に配置され、入力側配線抵抗４１２と中間配線抵抗４１６とを接続する接点として機能する。 The input side wiring 430 is an example of a third contact disposed on the signal output side from the output side wiring 122 which is an example of a second contact. The input side wiring 430 is connected to the output side wiring 122 of the previous stage P and is formed integrally with the output side wiring 122. The input-side wiring 430 is disposed on the output side of the output-side wiring 122 that is an example of the second contact, and functions as a contact that connects the input-side wiring resistance 412 and the intermediate wiring resistance 416.

出力側配線４３２は、第３接点の一例である入力側配線４３０より信号の出力側に配置される第４接点の一例である。出力側配線４３２は、信号の出力端として配置され、出力側配線抵抗４１４と中間配線抵抗４１６とを接続する接点として機能する。入力側接地配線４３４および出力側接地配線４３６は、その電位は接地電位（グランド）に維持されるから、入力側配線抵抗４１２および出力側配線抵抗４１４の一端を接地する接点としてのグランドの一例である。入力側配線４３０、出力側配線４３２、入力側接地配線４３４および出力側接地配線４３６は、基板１０２上に堆積した導電材料膜をパターニングして形成でき、その材料および代表的な作成方法は入力側配線１２０等と同様であってよい。 The output side wiring 432 is an example of a fourth contact disposed on the signal output side of the input side wiring 430 which is an example of a third contact. The output side wiring 432 is disposed as a signal output end, and functions as a contact point connecting the output side wiring resistance 414 and the intermediate wiring resistance 416. Since the input-side ground wiring 434 and the output-side ground wiring 436 are maintained at the ground potential (ground), the input-side ground wiring 434 and the output-side ground wiring 436 are examples of ground as a contact point for grounding one end of the input-side wiring resistance 412 and the output-side wiring resistance 414. is there. The input-side wiring 430, the output-side wiring 432, the input-side ground wiring 434, and the output-side ground wiring 436 can be formed by patterning a conductive material film deposited on the substrate 102. It may be the same as the wiring 120 or the like.

減衰器４００における入力側配線抵抗４１２は、その線幅が前段Ｐの入力側配線抵抗１０４と比較して小さい。なお、入力側配線抵抗４１２と入力側配線抵抗１０４とは膜厚が等しいとしている。すなわち、第１配線抵抗の一例である入力側配線抵抗１０４は、第５配線抵抗の一例である入力側配線抵抗４１２と比較して断面積が大きい。 The input side wiring resistance 412 in the attenuator 400 has a smaller line width than the input side wiring resistance 104 of the previous stage P. The input side wiring resistance 412 and the input side wiring resistance 104 are assumed to have the same film thickness. That is, the input-side wiring resistance 104 that is an example of the first wiring resistance has a larger cross-sectional area than the input-side wiring resistance 412 that is an example of the fifth wiring resistance.

図８は、減衰器４００の等価回路を示す。入力端ＩＮは信号を受信して、出力端ＯＵＴは信号を出力する。前段Ｐの抵抗Ｒｉｎ、抵抗Ｒｍ、抵抗Ｒｏｕｔ、接点１５０および接点１５２は、減衰器１００の場合と同様であってよい。接点４５４は接点１５２の出力側に配置されて接点１５２に接続される。 FIG. 8 shows an equivalent circuit of the attenuator 400. The input terminal IN receives a signal, and the output terminal OUT outputs a signal. The resistor Rin, resistor Rm, resistor Rout, contact 150 and contact 152 in the previous stage P may be the same as those of the attenuator 100. The contact 454 is disposed on the output side of the contact 152 and connected to the contact 152.

また接点４５４は、抵抗Ｒｉｎ２と抵抗Ｒｍ２とを接続する。抵抗Ｒｉｎ２は後段の入力側配線抵抗４１２であってよく、抵抗Ｒｍは後段の中間配線抵抗４１６であってよい。接点４５４の出力側には接点４５６が配置され、接点２５６は、抵抗Ｒｏｕｔ２と抵抗Ｒｍ２とを接続する。抵抗Ｒｏｕｔ２は後段の出力側配線抵抗４１４であってよい。 The contact 454 connects the resistor Rin2 and the resistor Rm2. The resistor Rin2 may be the input wiring resistance 412 at the subsequent stage, and the resistor Rm may be the intermediate wiring resistance 416 at the subsequent stage. A contact 456 is disposed on the output side of the contact 454, and the contact 256 connects the resistor Rout2 and the resistor Rm2. The resistor Rout2 may be the output-side wiring resistor 414 at the subsequent stage.

減衰器４００では、前段Ｐにおいて入力信号が十分に減衰されるから、後段Ｓの入力側配線抵抗４１２の線幅を小さくできる。この結果、減衰器４００のサイズを小さくして周波数特性を向上できる。また減衰器４００は前段Ｐと後段Ｓの２段の減衰回路を備えるから、大きな減衰率にすることができる。たとえば前段Ｐの減衰回路で２０ｄＢ、後段Ｓの減衰回路で２０ｄＢの減衰率を得れば、減衰器４００の減衰率は４０ｄＢになる。 In the attenuator 400, since the input signal is sufficiently attenuated in the front stage P, the line width of the input side wiring resistance 412 in the rear stage S can be reduced. As a result, the frequency characteristics can be improved by reducing the size of the attenuator 400. Further, since the attenuator 400 includes a two-stage attenuation circuit of the front stage P and the rear stage S, a large attenuation rate can be achieved. For example, if the attenuation rate of 20 dB is obtained by the attenuation circuit of the front stage P and 20 dB is obtained by the attenuation circuit of the rear stage S, the attenuation rate of the attenuator 400 is 40 dB.

また前段Ｐの入力側配線抵抗１０４は十分大きな線幅を有するから、減衰器４００は大きな電力の入力信号にも対応できる。なお、減衰器４００は２段の減衰器を備える場合に限られず、３段以上の複数段の減衰器を備えてもよい。 Further, since the input-side wiring resistance 104 of the previous stage P has a sufficiently large line width, the attenuator 400 can cope with an input signal with a large power. Note that the attenuator 400 is not limited to the case of including a two-stage attenuator, and may include a plurality of stages of attenuators of three or more stages.

図９は、減衰器１００の第４変形例である減衰器５００のレイアウトの一例を示す。減衰器５００は、基板１０２上に設けられ、前段Ｐのπ型回路および後段Ｓの２段のπ型回路を備える。前段Ｐのπ型回路は、入力側配線抵抗５０４、出力側配線抵抗５０６、中間配線抵抗５０８、入力側配線５２０、出力側配線５２２、入力側接地配線５２４および出力側接地配線５２６を有する。後段Ｓのπ型回路は、入力側配線抵抗５１２、出力側配線抵抗５１４、中間配線抵抗５１６、入力側配線５３０、出力側配線５３２、入力側接地配線５３４および出力側接地配線５３６を有する。基板１０２は減衰器１００と同様であるから説明を省略する。 FIG. 9 shows an example of the layout of an attenuator 500 that is a fourth modification of the attenuator 100. The attenuator 500 is provided on the substrate 102 and includes a π-type circuit at the front stage P and a two-stage π-type circuit at the rear stage S. The π-type circuit of the previous stage P includes an input side wiring resistance 504, an output side wiring resistance 506, an intermediate wiring resistance 508, an input side wiring 520, an output side wiring 522, an input side ground wiring 524, and an output side ground wiring 526. The π-type circuit of the latter stage S includes an input side wiring resistance 512, an output side wiring resistance 514, an intermediate wiring resistance 516, an input side wiring 530, an output side wiring 532, an input side ground wiring 534, and an output side ground wiring 536. Since the substrate 102 is the same as the attenuator 100, description thereof is omitted.

前段Ｐの入力側配線抵抗５０４、出力側配線抵抗５０６、中間配線抵抗５０８、入力側配線５２０、出力側配線５２２、入力側接地配線５２４および出力側接地配線５２６は、減衰器４００の前段Ｐの各配線抵抗および配線と同様であってよい。すなわち、入力側配線抵抗５０４は第１配線抵抗の一例であり、出力側配線抵抗５０６は第２配線抵抗の一例であり、中間配線抵抗５０８は第３配線抵抗の一例である。 The input-side wiring resistance 504, the output-side wiring resistance 506, the intermediate wiring resistance 508, the input-side wiring 520, the output-side wiring 522, the input-side ground wiring 524, and the output-side ground wiring 526 of the preceding stage P It may be the same as each wiring resistance and wiring. That is, the input side wiring resistance 504 is an example of a first wiring resistance, the output side wiring resistance 506 is an example of a second wiring resistance, and the intermediate wiring resistance 508 is an example of a third wiring resistance.

また入力側配線５２０は第１接点の一例であり、出力側配線５２２は第２接点の一例であり、入力側接地配線５２４および出力側接地配線５２６はグランドの一例である。よって、前段Ｐのπ型回路は、第１配線抵抗の一例である入力側配線抵抗５０４と、第２配線抵抗の一例である出力側配線抵抗５０６と、第３配線抵抗の一例である中間配線抵抗５０８とを備える第１段減衰器の一例である。 The input side wiring 520 is an example of a first contact, the output side wiring 522 is an example of a second contact, and the input side ground wiring 524 and the output side ground wiring 526 are examples of ground. Therefore, the π-type circuit in the previous stage P includes an input-side wiring resistance 504 that is an example of a first wiring resistance, an output-side wiring resistance 506 that is an example of a second wiring resistance, and an intermediate wiring that is an example of a third wiring resistance. It is an example of a first stage attenuator including a resistor 508.

後段Ｓの入力側配線抵抗５１２、出力側配線抵抗５１４、中間配線抵抗５１６、入力側配線５３０、出力側配線５３２、入力側接地配線５３４および出力側接地配線５３６は、減衰器４００の後段Ｓの各配線抵抗および配線と同様であってよい。すなわち、入力側配線抵抗５１２は第５配線抵抗の一例であり、出力側配線抵抗５１４は第６配線抵抗の一例であり、中間配線抵抗５１６は第７配線抵抗の一例である。 The input-side wiring resistance 512, the output-side wiring resistance 514, the intermediate wiring resistance 516, the input-side wiring 530, the output-side wiring 532, the input-side ground wiring 534, and the output-side ground wiring 536 of the rear stage S are It may be the same as each wiring resistance and wiring. That is, the input side wiring resistance 512 is an example of a fifth wiring resistance, the output side wiring resistance 514 is an example of a sixth wiring resistance, and the intermediate wiring resistance 516 is an example of a seventh wiring resistance.

また入力側配線５３０は第３接点の一例であり、出力側配線５３２は第４接点の一例であり、入力側接地配線５３４および出力側接地配線５３６はグランドの一例である。よって、後段Ｓのπ型回路は、第５配線抵抗の一例である入力側配線抵抗５１２と、第６配線抵抗の一例である出力側配線抵抗５１４と、第７配線抵抗の一例である中間配線抵抗５１６とを備える第２段減衰器の一例である。 The input side wiring 530 is an example of a third contact, the output side wiring 532 is an example of a fourth contact, and the input side ground wiring 534 and the output side ground wiring 536 are examples of ground. Therefore, the π-type circuit in the rear stage S includes an input-side wiring resistance 512 that is an example of a fifth wiring resistance, an output-side wiring resistance 514 that is an example of a sixth wiring resistance, and an intermediate wiring that is an example of a seventh wiring resistance. It is an example of a second stage attenuator including a resistor 516.

減衰器５００では、第１段減衰器の一例である前段Ｐのπ型回路は、第２段減衰器の一例である後段Ｓのπ型回路と比較して減衰率が小さい。たとえば前段Ｐの減衰率を１５ｄＢ、後段Ｓの減衰率を２５ｄＢとして減衰器５００の減衰率を４０ｄＢにすることができる。あるいは前段Ｐの減衰率を１０ｄＢ、後段Ｓの減衰率を３０ｄＢとして減衰器５００の減衰率を４０ｄＢにすることができる。なお、前段Ｐおよび後段Ｓの減衰率は、前段Ｐが後段Ｓに比較して減衰率が小さい条件を満たす限り任意であってよい。 In the attenuator 500, the π-type circuit at the front stage P, which is an example of the first-stage attenuator, has a smaller attenuation rate than the π-type circuit at the rear stage S, which is an example of the second-stage attenuator. For example, the attenuation rate of the front stage P can be 15 dB, the attenuation rate of the rear stage S can be 25 dB, and the attenuation rate of the attenuator 500 can be 40 dB. Alternatively, the attenuation rate of the attenuator 500 can be 40 dB by setting the attenuation rate of the front stage P to 10 dB, the attenuation rate of the rear stage S to 30 dB. The attenuation rate of the front stage P and the rear stage S may be arbitrary as long as the front stage P satisfies the condition that the attenuation rate is smaller than that of the rear stage S.

減衰器の減衰率は、π型回路の場合は主に入力側配線抵抗と中間配線抵抗との比に依存する。すなわち、入力側配線抵抗に比較して中間配線抵抗の抵抗値が大きいと減衰率は大きくなる。周波数特性の要請から中間配線抵抗の抵抗値はあまり大きくできないから、入力側配線抵抗の抵抗値を小さくすることになる。ところが入力側配線抵抗の抵抗値が小さいと多くの電流が流れることになるから、大電力の入力信号に対応できなくなる。つまり、減衰器の減衰率と周波数特性および大電力対応とはトレードオフの関係にあり、周波数特性と大電力対応を優先すれば減衰率は小さくならざるを得ない。 In the case of a π-type circuit, the attenuation factor of the attenuator mainly depends on the ratio of the input side wiring resistance and the intermediate wiring resistance. That is, when the resistance value of the intermediate wiring resistance is larger than the input side wiring resistance, the attenuation factor increases. Since the resistance value of the intermediate wiring resistance cannot be increased so much due to the requirement of frequency characteristics, the resistance value of the input side wiring resistance is reduced. However, if the resistance value of the input-side wiring resistance is small, a large amount of current flows, so that it becomes impossible to cope with a high-power input signal. That is, there is a trade-off relationship between the attenuation factor of the attenuator, the frequency characteristic, and the high power response, and if the frequency characteristic and the high power response are prioritized, the attenuation factor must be reduced.

しかし、減衰器５００では、前段Ｐのπ型回路では減衰率を小さくしているから周波数特性と大電力対応を優先できる。一方、後段Ｓのπ型回路では前段Ｐで信号がある程度減衰されているので、大電力の入力信号に対応する要請は小さく、高い減衰率を優先できる。結果として減衰器５００は、高い減衰率と周波数特性および大電力対応の要請を両立できる。なお、減衰器５００は２段のπ型回路を備える場合に限られず、３段以上の複数段のπ型回路を備えてもよい。 However, in the attenuator 500, since the attenuation rate is reduced in the π-type circuit of the previous stage P, priority can be given to frequency characteristics and high power handling. On the other hand, since the signal is attenuated to some extent in the former stage P in the π-type circuit of the latter stage S, the demand for a high-power input signal is small, and a high attenuation rate can be prioritized. As a result, the attenuator 500 can satisfy both a high attenuation rate, a frequency characteristic, and a demand for high power. The attenuator 500 is not limited to the case of including a two-stage π-type circuit, and may include a plurality of stages of π-type circuits of three or more stages.

図１０は、減衰器１００の第５変形例である減衰器６００のレイアウトの一例を示す。減衰器６００は、基板１０２上に設けられ、前段Ｐのπ型回路および後段Ｓの２段のπ型回路を備える。前段Ｐのπ型回路および後段Ｓのπ型回路はその中央部分に仮想的に存在する中心線に対し対称に配置される。よって減衰器６００は、すでに説明した減衰器１００等とは相違して、前段Ｐの側に限らず、後段Ｓの側からも信号の入力が可能になっている。 FIG. 10 shows an example of the layout of an attenuator 600 that is a fifth modification of the attenuator 100. The attenuator 600 is provided on the substrate 102 and includes a π-type circuit at the front stage P and a two-stage π-type circuit at the rear stage S. The π-type circuit at the front stage P and the π-type circuit at the rear stage S are arranged symmetrically with respect to the center line virtually existing in the central portion. Therefore, unlike the attenuator 100 described above, the attenuator 600 can input signals not only from the front stage P side but also from the rear stage S side.

前段Ｐのπ型回路は、入力側配線抵抗１０４、出力側配線抵抗１０６、中間配線抵抗１０８、入力側配線１２０、出力側配線１２２、入力側接地配線１２４および出力側接地配線１２６を有する。後段Ｓのπ型回路は、入力側配線抵抗６１２、出力側配線抵抗６１４、中間配線抵抗６１６、入力側配線６３０、出力側配線６３２、入力側接地配線６３４および出力側接地配線６３６を有する。基板１０２と、前段Ｐのπ型回路は、減衰器１００と同様であるから説明を省略する。 The π-type circuit of the previous stage P includes an input side wiring resistance 104, an output side wiring resistance 106, an intermediate wiring resistance 108, an input side wiring 120, an output side wiring 122, an input side ground wiring 124, and an output side ground wiring 126. The π-type circuit in the subsequent stage S includes an input side wiring resistance 612, an output side wiring resistance 614, an intermediate wiring resistance 616, an input side wiring 630, an output side wiring 632, an input side ground wiring 634, and an output side ground wiring 636. Since the substrate 102 and the π-type circuit of the previous stage P are the same as those of the attenuator 100, the description thereof is omitted.

入力側配線抵抗１０４は、第１接点の一例である入力側配線１２０とグランドの一例である入力側接地配線１２４との間に設けられた第１配線抵抗の一例である。出力側配線抵抗１０６は、第２接点の一例である出力側配線１２２とグランドの一例である出力側接地配線１２６との間に設けられた第２配線抵抗の一例である。中間配線抵抗１０８は、入力側配線１２０および出力側配線１２２の間に設けられた第３配線抵抗の一例である。 The input-side wiring resistance 104 is an example of a first wiring resistance provided between an input-side wiring 120 that is an example of a first contact and an input-side ground wiring 124 that is an example of ground. The output-side wiring resistance 106 is an example of a second wiring resistance provided between an output-side wiring 122 that is an example of a second contact and an output-side ground wiring 126 that is an example of ground. The intermediate wiring resistance 108 is an example of a third wiring resistance provided between the input side wiring 120 and the output side wiring 122.

入力側配線１２０は、前段Ｐ側からの信号における入力側の第１接点の一例であり、出力側配線１２２は、第１接点より前段Ｐ側からの信号における出力側に配置される第２接点の一例である。入力側接地配線１２４および出力側接地配線１２６はグランドの一例である。入力側配線１２０は、前段Ｐ側からの信号の入力端であってよい。 The input side wiring 120 is an example of the first contact on the input side in the signal from the previous stage P side, and the output side wiring 122 is the second contact disposed on the output side in the signal from the previous stage P side than the first contact. It is an example. The input side ground wiring 124 and the output side ground wiring 126 are examples of the ground. The input side wiring 120 may be an input end of a signal from the previous stage P side.

入力側配線抵抗６１２は、第３接点の一例である入力側配線６３０とグランドの一例である入力側接地配線６３４との間に設けられた第４配線抵抗の一例である。出力側配線抵抗６１４は、第４接点の一例である出力側配線６３２とグランドの一例である出力側接地配線６３６との間に設けられた第５配線抵抗の一例である。中間配線抵抗６１６は、入力側配線６３０および出力側配線６３２の間に設けられた第６配線抵抗の一例である。 The input side wiring resistance 612 is an example of a fourth wiring resistance provided between an input side wiring 630 that is an example of a third contact and an input side ground wiring 634 that is an example of ground. The output side wiring resistance 614 is an example of a fifth wiring resistance provided between an output side wiring 632 that is an example of a fourth contact and an output side ground wiring 636 that is an example of ground. The intermediate wiring resistance 616 is an example of a sixth wiring resistance provided between the input side wiring 630 and the output side wiring 632.

入力側配線６３０は、後段Ｓ側からの信号における入力側の第３接点の一例であり、出力側配線６３２は、第３接点より後段Ｓ側からの信号における出力側に配置される第４接点の一例である。入力側接地配線６３４および出力側接地配線６３６はグランドの一例である。後段Ｓの出力側配線６３２は、前段Ｐの出力側配線１２２と接続されて、前段Ｐの出力側配線１２２と一体に形成される。入力側配線６３０は、後段Ｓ側からの信号の入力端であってよい。 The input side wiring 630 is an example of a third contact on the input side in the signal from the subsequent stage S side, and the output side wiring 632 is a fourth contact disposed on the output side in the signal from the subsequent stage S side than the third contact. It is an example. The input side ground wiring 634 and the output side ground wiring 636 are examples of the ground. The output S wiring 632 of the rear stage S is connected to the output side wiring 122 of the front stage P and is formed integrally with the output side wiring 122 of the front stage P. The input side wiring 630 may be an input end of a signal from the subsequent stage S side.

減衰器６００では、第１配線抵抗の一例である入力側配線抵抗１０４は、第２配線抵抗の一例である出力側配線抵抗１０６と比較して断面積が大きい。また第４配線抵抗の一例である入力側配線抵抗６１２は、第５配線抵抗の一例である出力側配線抵抗６１４と比較して断面積が大きい。このため、前段Ｐの側から信号を入力する場合および後段Ｓの側から信号を入力する場合の何れの場合でも大電力の入力信号に対応できる。また減衰器６００ではπ型回路を２段備えるので大きな減衰率を得ることができる。なお、減衰器６００は２段のπ型回路を備える場合に限られず、３段以上の複数段のπ型回路を備えてもよい。 In the attenuator 600, the input-side wiring resistance 104, which is an example of the first wiring resistance, has a larger cross-sectional area than the output-side wiring resistance 106, which is an example of the second wiring resistance. Further, the input-side wiring resistance 612 that is an example of the fourth wiring resistance has a larger cross-sectional area than the output-side wiring resistance 614 that is an example of the fifth wiring resistance. For this reason, it is possible to deal with a high-power input signal in any case of inputting a signal from the front stage P side and inputting a signal from the rear stage S side. Further, since the attenuator 600 includes two stages of π-type circuits, a large attenuation rate can be obtained. The attenuator 600 is not limited to the case of including a two-stage π-type circuit, and may include a plurality of stages of π-type circuits of three or more stages.

以上、本発明を実施の形態を用いて説明したが、本発明の技術的範囲は上記実施の形態に記載の範囲には限定されない。上記実施の形態に、多様な変更または改良を加えることができることは当業者に明らかである。その様な変更または改良を加えた形態も本発明の技術的範囲に含まれ得ることが、請求の範囲の記載から明らかである。 As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. It will be apparent to those skilled in the art that various modifications or improvements can be added to the above-described embodiment. It is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention.

たとえば、上記した減衰器１００等は、基板１０２上に形成された電子素子とともに基板１０２上に形成されて、電子デバイスに含まれるものであってもよい。特に高周波特性に優れた化合物半導体トランジスタとともに基板１０２上に減衰器１００等を形成してＭＭＩＣ（ＭｉｃｒｏｗａｖｅＭｏｎｏｌｉｔｈｉｃＩＣ）を形成してもよい。 For example, the attenuator 100 and the like described above may be formed on the substrate 102 together with the electronic element formed on the substrate 102 and included in the electronic device. In particular, an attenuator 100 or the like may be formed on the substrate 102 together with a compound semiconductor transistor having excellent high frequency characteristics to form an MMIC (Microwave Monolithic IC).

図１１は、電子デバイス７００の一例を示す。電子デバイス７００は、入力端ＩＮおよび出力端ＯＵＴの間を、減衰器７１０を介して接続するトランジスタ７２０およびトランジスタ７２２を備える。また入力端ＩＮおよび出力端ＯＵＴの間を直結するトランジスタ７２４およびトランジスタ７２６を備える。トランジスタ７２０およびトランジスタ７２２とトランジスタ７２４およびトランジスタ７２６とは、入力端ＩＮおよび出力端ＯＵＴの間を、減衰器７１０を介して接続するか直結するかを切り替える。 FIG. 11 shows an example of the electronic device 700. The electronic device 700 includes a transistor 720 and a transistor 722 that connect the input terminal IN and the output terminal OUT via an attenuator 710. Further, a transistor 724 and a transistor 726 that directly connect the input terminal IN and the output terminal OUT are provided. The transistor 720 and the transistor 722, and the transistor 724 and the transistor 726 are switched between connecting the input terminal IN and the output terminal OUT via the attenuator 710 or directly connecting them.

トランジスタ７２０およびトランジスタ７２２と、トランジスタ７２４およびトランジスタ７２６とは、選択回路７３０によりオンまたはオフが選択される。トランジスタ７２０およびトランジスタ７２２がオンのとき、トランジスタ７２４およびトランジスタ７２６はオフであり、またその逆であってよい。トランジスタ７２０、トランジスタ７２２、トランジスタ７２４およびトランジスタ７２６は、高周波特性に優れた、たとえば化合物半導体のヘテロ接合電界効果トランジスタが好ましい。選択回路７３０は電子デバイス７００に含まれてもよい。 The selection circuit 730 selects on or off of the transistors 720 and 722 and the transistors 724 and 726. When transistor 720 and transistor 722 are on, transistor 724 and transistor 726 may be off and vice versa. The transistor 720, the transistor 722, the transistor 724, and the transistor 726 are preferably compound semiconductor heterojunction field effect transistors having excellent high-frequency characteristics. The selection circuit 730 may be included in the electronic device 700.

減衰器１００のレイアウトの一例を示す。An example of the layout of the attenuator 100 is shown. 減衰器１００のＡ−Ａ線断面を示す。The AA line cross section of the attenuator 100 is shown. 減衰器１００の等価回路を負荷抵抗ＲＬとともに示す。An equivalent circuit of the attenuator 100 is shown together with a load resistance RL. 減衰器１００の変形例であってよい減衰器２００のレイアウトの一例を示す。An example of the layout of the attenuator 200 which may be a modification of the attenuator 100 is shown. 減衰器２００のＢ−Ｂ線断面を示す。The BB line cross section of the attenuator 200 is shown. 減衰器１００の変形例であってよい減衰器３００のレイアウトの一例を示す。An example of the layout of the attenuator 300 which may be a modification of the attenuator 100 is shown. 前段Ｐおよび後段Ｓの２段のπ型回路を備える減衰器４００のレイアウトの一例を示す。An example of a layout of an attenuator 400 including a two-stage π-type circuit of a front stage P and a rear stage S is shown. 減衰器４００の等価回路を示す。An equivalent circuit of the attenuator 400 is shown. 前段Ｐおよび後段Ｓの２段のπ型回路を備える減衰器５００のレイアウトの一例を示す。An example of a layout of an attenuator 500 including a two-stage π-type circuit of a front stage P and a rear stage S is shown. 前段Ｐおよび後段Ｓの２段のπ型回路を備える減衰器６００のレイアウトの一例を示す。An example of the layout of an attenuator 600 including a two-stage π-type circuit of a front stage P and a rear stage S is shown. 電子デバイス７００の一例を示す。An example of the electronic device 700 is shown.

Explanation of symbols

１００減衰器
１０２基板
１０４入力側配線抵抗
１０６出力側配線抵抗
１０８中間配線抵抗
１２０入力側配線
１２２出力側配線
１２４入力側接地配線
１２６出力側接地配線
１５０接点
１５２接点
２００減衰器
２０４入力側配線抵抗
２２０入力側配線
２２４入力側接地配線
２５６接点
３００減衰器
３０４入力側配線抵抗
３１０入力側付加配線抵抗
３２０入力側配線
３２４入力側接地配線
３２８入力側付加接地配線
４００減衰器
４１２入力側配線抵抗
４１４出力側配線抵抗
４１６中間配線抵抗
４３０入力側配線
４３２出力側配線
４３４入力側接地配線
４３６出力側接地配線
４５４接点
４５６接点
５００減衰器
５０４入力側配線抵抗
５０６出力側配線抵抗
５０８中間配線抵抗
５１２入力側配線抵抗
５１４出力側配線抵抗
５１６中間配線抵抗
５２０入力側配線
５２２出力側配線
５２４入力側接地配線
５２６出力側接地配線
５３０入力側配線
５３２出力側配線
５３４入力側接地配線
５３６出力側接地配線
６００減衰器
６１２入力側配線抵抗
６１４出力側配線抵抗
６１６中間配線抵抗
６３０入力側配線
６３２出力側配線
６３４入力側接地配線
６３６出力側接地配線
７００電子デバイス
７１０減衰器
７２０トランジスタ
７２２トランジスタ
７２４トランジスタ
７２６トランジスタ
７３０選択回路 100 attenuator 102 substrate 104 input side wiring resistance 106 output side wiring resistance 108 intermediate wiring resistance 120 input side wiring 122 output side wiring 124 input side ground wiring 126 output side ground wiring 150 contact 152 contact 200 attenuator 204 input side wiring resistance 220 Input side wiring 224 Input side ground wiring 256 Contact 300 Attenuator 304 Input side wiring resistance 310 Input side additional wiring resistance 320 Input side wiring 324 Input side ground wiring 328 Input side additional ground wiring 400 Attenuator 412 Input side wiring resistance 414 Output side Wiring resistance 416 Intermediate wiring resistance 430 Input side wiring 432 Output side wiring 434 Input side ground wiring 436 Output side ground wiring 454 Contact 456 Contact 500 Attenuator 504 Input side wiring resistance 506 Output side wiring resistance 508 Intermediate wiring resistance 512 Input side wiring resistance 514 Output side wiring resistance 5 6 Intermediate wiring resistance 520 Input side wiring 522 Output side wiring 524 Input side ground wiring 526 Output side ground wiring 530 Input side wiring 532 Output side wiring 534 Input side ground wiring 536 Output side ground wiring 600 Attenuator 612 Input side wiring resistance 614 Output Side wiring resistance 616 Intermediate wiring resistance 630 Input side wiring 632 Output side wiring 634 Input side ground wiring 636 Output side ground wiring 700 Electronic device 710 Attenuator 720 Transistor 722 Transistor 724 Transistor 726 Transistor 730 Selection circuit

Claims

An attenuator provided on a substrate,
A first wiring resistance provided between the first contact on the signal input side and the ground;
A second wiring resistor provided between the second contact on the signal output side of the first contact and the ground;
A third wiring resistance provided between the first contact and the second contact;
A fourth wiring resistance provided between the first contact and the ground;
With
The sum of the cross-sectional areas of the first wiring resistance and the fourth wiring resistance is larger than the cross-sectional area of the second wiring resistance,
The fourth wiring resistance is provided at a position symmetrical to the first wiring resistance with an axis along the third wiring resistance as an axis of symmetry, and has the same line width as the first wiring resistance,
A resistance value of the third wiring resistance is larger than an input-side wiring resistance formed by the first wiring resistance and the fourth wiring resistance;
Attenuator.

The input side wiring resistance and the second wiring resistance are equal in resistance value,
The ratio of the sum of the cross-sectional areas of the first wiring resistance and the fourth wiring resistance and the ratio of the cross-sectional area of the second wiring resistance is a circuit having an impedance defined in advance between the signal output terminal and the ground. Is equal to the ratio of the current flowing through the input wiring resistance and the second wiring resistance when
The attenuator according to claim 1.

The first wiring resistance , the second wiring resistance, and the fourth wiring resistance are equal in thickness,
The attenuator according to claim 1 or 2 .

An attenuator provided on a substrate,
A first wiring resistance provided between the first contact on the signal input side and the ground;
A second wiring resistor provided between the second contact on the signal output side of the first contact and the ground;
A third wiring resistance provided between the first contact and the second contact;
A fourth wiring resistance provided between the third contact on the signal output side of the second contact and the ground;
A fifth wiring resistor provided between the fourth contact on the signal output side of the third contact and the ground;
A sixth wiring resistance provided between the third contact and the fourth contact;
With
The first wiring resistance has a larger cross-sectional area than the second wiring resistance,
The first wiring resistance and the second wiring resistance have the same resistance value,
Said first wiring resistance, the cross-sectional area rather large as compared to the fourth wiring resistance,
The third contact is connected to the second contact;
The first-stage attenuator including the first wiring resistance, the second wiring resistance, and the third wiring resistance includes the fourth wiring resistance, the fifth wiring resistance, and the sixth wiring resistance. Attenuation rate is small compared to the second stage attenuator provided,
Attenuator.

An attenuator provided on a substrate and capable of inputting a signal from both the first direction and the second direction,
A first wiring resistance provided between the first contact on the input side of the first signal input from the first direction and the ground;
A second wiring resistance provided between the second contact on the output side of the first signal and the ground from the first contact;
A third wiring resistance provided between the first contact and the second contact;
A fourth wiring resistance provided between the third contact on the input side of the second signal input from the second direction and the ground;
A fifth wiring resistor provided between the fourth contact on the output side of the second signal and the ground from the third contact;
A sixth wiring resistor provided between the third contact and the fourth contact;
The fourth contact is connected to the second contact;
The first wiring resistance has a larger cross-sectional area than the second wiring resistance,
The first wiring resistance and the second wiring resistance have the same resistance value,
The resistance value of the third wiring resistance is larger than the first wiring resistance,
The fourth wiring resistance has a larger cross-sectional area than the fifth wiring resistance.
Attenuator.

A first stage attenuator comprising the first wiring resistance, the second wiring resistance and the third wiring resistance; and a second stage attenuator comprising the fourth wiring resistance, the fifth wiring resistance and the sixth wiring resistance. Is provided on the substrate symmetrically about the center line,
The attenuator according to claim 5 .

An electronic device comprising the attenuator according to any one of claims 1 to 6 .

A switch for switching whether the input end and the output end of the electronic device are connected or directly connected via the attenuator,
The electronic device according to claim 7 , further comprising: