CN113345993A - Light emitting diode and preparation method thereof - Google Patents
Light emitting diode and preparation method thereof Download PDFInfo
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- CN113345993A CN113345993A CN202110604191.2A CN202110604191A CN113345993A CN 113345993 A CN113345993 A CN 113345993A CN 202110604191 A CN202110604191 A CN 202110604191A CN 113345993 A CN113345993 A CN 113345993A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
Abstract
The invention discloses a light-emitting diode and a preparation method thereof, wherein the light-emitting diode sequentially comprises: the light-emitting diode comprises a substrate, a first reflecting layer, a first insulating layer, a metal barrier layer, a second reflecting layer and an epitaxial layer, wherein an active layer in the epitaxial layer forms a light-emitting region, the metal barrier layer comprises a first part and a second part, the first part is positioned below the light-emitting region of the epitaxial layer forming the light-emitting diode, and the second part is positioned below an electrode region forming an electrode of the light-emitting diode. In the projection of the first surface of the substrate, at least part of the edge line of the first part of the metal barrier layer is positioned inside the edge line of the light emitting area, and the edge line of the second part of the metal barrier layer is positioned outside the edge line of the light emitting area. The invention can solve the problems of light absorption and shielding of the metal barrier layer, and can prevent the etching liquid from leaking to the bottom layer beyond the blocking range of the metal barrier layer when an electrode is formed at the later stage, thereby being beneficial to the reliability of the device.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a light-emitting diode and a preparation method thereof.
Background
Currently, the structure of GaN-based LEDs is divided into a front-mount structure, a flip-chip structure, and a vertical structure. Because the P, N electrodes of the LED with the forward mounting structure are positioned on the same side, current needs to transversely flow through the n-GaN layer, so that the current is crowded, the local heating amount is high, the driving current is limited, and the heat dissipation is difficult. The flip-chip structure can improve the radiating effect to a certain extent, but GaN base flip-chip structure still is lateral structure, and the crowded phenomenon of electric current still exists, has still restricted drive current's further promotion. Compared with the traditional GaN-based LED forward mounting and inverted mounting structure, the LED chip with the vertical structure has good heat dissipation, can bear large current, has high luminous intensity, and is widely applied to the fields of general illumination, landscape illumination, special illumination and the like.
An Ag reflecting layer is generally arranged on an ohmic contact part of a P-GaN layer of the conventional GaN-based LED vertical structure chip and used for reflecting light emitted by an epitaxial layer to a light-emitting surface, so that the reflection efficiency is improved. In the prior art, since Ag is easy to diffuse, a blocking layer is generally arranged below the Ag reflective layer to prevent the diffusion of Ag, but the blocking layer can block the reflected light of the lower N-electrode of the chip with the vertical structure, thereby affecting the light extraction efficiency of the LED chip.
Disclosure of Invention
In order to solve at least one technical problem in the background art, the invention provides a light emitting diode and a preparation method thereof, which can solve the problems of light absorption and shielding of a metal barrier layer, and can prevent etching liquid from leaking to a bottom layer beyond the blocking range of the metal barrier layer when an electrode is formed at a later stage, so that the device is damaged, and the reliability of the device is facilitated.
The technical scheme adopted by the invention is as follows:
according to an aspect of the present invention, there is provided a light emitting diode including:
a substrate having a first surface and a second surface oppositely disposed;
the first reflecting layer is arranged above the substrate;
the first insulating layer is arranged above part of the first reflecting layer;
the metal barrier layer is arranged above part of the first insulating layer and comprises a first part and a second part, the first part is positioned below a light emitting area forming an epitaxial layer of the light emitting diode, the second part is positioned below an electrode area forming an electrode of the light emitting diode, and the first part and the second part form a continuous structure;
the second reflecting layer is arranged on part of the surface of the first part of the metal barrier layer and is coated by the first part of the metal barrier layer;
the epitaxial layer is positioned above the second reflecting layer and the first part of the metal barrier layer except the second reflecting layer, the epitaxial layer sequentially comprises a second semiconductor layer, an active layer and a first semiconductor layer, and the first reflecting layer penetrates through the second semiconductor layer, the active layer and part of the first semiconductor layer and is electrically connected with the first semiconductor layer; the active layer forms a light emitting area of the light emitting diode;
in the projection of the first surface of the substrate, at least part of the edge line of the first part of the metal barrier layer is positioned inside the edge line of the light emitting area, and the edge line of the second part of the metal barrier layer is positioned outside the edge line of the light emitting area.
Optionally, in a projection of the first surface of the substrate, an edge line of the second portion of the metal barrier layer is located outside an edge line of the electrode region.
Optionally, the distance between the edge line of the second part of the metal barrier layer and the edge line of the electrode region is 3-15 μm.
Optionally, in a projection of the first surface of the substrate, an edge line of the first portion of the metal barrier layer is located outside an edge line of the second reflective layer.
Optionally, in the projection of the first surface of the substrate, the distance between the edge line of the first portion of the metal barrier layer and the edge line of the second reflective layer is between 2 μm and 4 μm.
Optionally, a groove is formed in a region of the first portion of the metal barrier layer except for the region covering the second reflective layer, the groove penetrates through the metal barrier layer, and at least a portion of the first reflective layer is disposed right below the groove.
Optionally, the recess is provided in an edge region of the first portion of the metallic barrier layer.
Optionally, the groove is disposed at an edge position of the first portion of the metal barrier layer, and the groove is formed as a plurality of independent grooves.
Optionally, the plurality of grooves are uniformly distributed at the edge position of the first portion of the metal barrier layer.
Optionally, the first reflective layer includes a first portion and a second portion, the first portion of the first reflective layer is in electrical contact with the first semiconductor layer, and the second portion of the first reflective layer is disposed right below the groove.
Optionally, the material of the metal barrier layer includes one or an alloy of at least two of Ti, Pt, Au, or Cr, and a metal bonding layer is disposed between the substrate and the first reflective layer.
Optionally, the method further comprises: the second insulating layer is arranged above the second reflecting layer, and a transparent conducting layer is embedded in the second insulating layer and connected with the second reflecting layer. According to another aspect of the present invention, there is provided a method of manufacturing a light emitting diode, including:
providing a growth substrate, and forming an epitaxial layer on the growth substrate, wherein the epitaxial layer sequentially comprises a first semiconductor layer, an active layer and a second semiconductor layer, and the active layer forms a light emitting region of the light emitting diode;
forming an electrode hole in the epitaxial layer, wherein the electrode hole penetrates through the second semiconductor layer, the active layer and part of the first semiconductor layer;
forming a second reflective layer over a portion of the second semiconductor layer;
forming a metal barrier layer above the second reflecting layer and part of the second semiconductor layer, wherein a first part of the metal barrier layer corresponds to a light emitting region of the light emitting diode epitaxial layer, a second part of the metal barrier layer corresponds to an electrode region of an electrode of the light emitting diode, the first part and the second part form a continuous structure, in the projection of the first surface of the substrate, at least part of edge lines of the first part of the metal barrier layer are positioned on the inner side of edge lines of the light emitting region, and edge lines of the second part of the metal barrier layer are positioned on the outer side of the edge lines of the light emitting region;
forming a first insulating layer, wherein the first insulating layer is formed above the metal barrier layer and on the side wall of the electrode hole;
forming a first reflecting layer, wherein at least part of the first reflecting layer is formed above the first insulating layer, covers the first insulating layer on the side wall of the electrode hole and the bottom of the electrode hole, and is electrically connected with the first semiconductor layer;
and providing a substrate, forming the structure formed in the step to the first surface of the substrate, and removing the growth substrate.
Optionally, in a projection of the first surface of the substrate, the edge line of the second portion of the metal barrier layer is located outside the edge line of the electrode region.
Optionally, the distance between the edge line of the second part of the metal barrier layer and the edge line of the electrode region is 3-15 μm.
Compared with the prior art, the light-emitting diode and the preparation method thereof have the following beneficial effects:
the metal barrier layer of the light-emitting diode comprises a first part and a second part, wherein the metal barrier layer comprises the first part and the second part, the first part is positioned below a light-emitting area of an epitaxial layer of the light-emitting diode, the second part is positioned below an electrode area of an electrode of the light-emitting diode, and the first part and the second part form a continuous structure; in the projection of the first surface of the substrate, the edge line of the second part of the metal barrier layer is located on the outer side of the edge line of the light emitting area, at least part of the edge line of the first part of the metal barrier layer is located on the inner side of the edge line of the light emitting area, so that the projection area of the light emitting area is larger than that of the metal barrier layer, and the part of the light emitting area, which is larger than that of the metal barrier layer, can transmit light emitted downwards through the epitaxial layer due to the fact that the metal barrier layer is not shielded, and can also transmit the light reflected to the light emitting surface through the lower electrode or the first reflecting layer, and the metal barrier layer is prevented from absorbing and shielding the light.
Furthermore, in the projection of the first surface of the substrate, the edge line of the second part of the metal barrier layer is positioned outside the edge line of the electrode region, the distance between the edge line of the second part of the metal barrier layer and the edge line of the electrode region is 3-15 μm, and the metal barrier layer positioned outside the electrode region can effectively block the etching liquid when the electrode region is over-etched, so that the etching liquid is prevented from leaking to the bottom layer, and the reliability of the device is facilitated.
Furthermore, a groove is formed in the first part of the metal barrier layer in a region except for the region which wraps the second reflection layer, the groove penetrates through the metal barrier layer, and at least part of the first reflection layer is formed right below the groove.
The preparation method of the light-emitting diode comprises the structure of the light-emitting diode, and the light-emitting efficiency and the reliability of the light-emitting diode can be improved.
Drawings
FIG. 1a is a schematic structural diagram of a light emitting diode in the prior art;
FIGS. 1b-1c are plan views of the substrate, metal barrier layer, epitaxial layer, reflective layer and electrode layer of a prior art LED;
FIG. 2 is a top view of an LED according to an embodiment of the present invention;
FIG. 3 is a cross-sectional view taken along line A-A of FIG. 2;
fig. 4 is a plan view of the substrate, the metal barrier layer, the light-emitting region, the electrode region and the reflective layer of the led shown in fig. 2 or 3;
FIG. 5 is a top view of an LED according to an embodiment of the present invention;
FIG. 6 is a cross-sectional view taken along line B-B of FIG. 5;
fig. 7a is a schematic plane structure diagram of a metal barrier layer in the light emitting diode in fig. 5 or fig. 6;
FIG. 7b is a schematic plane structure diagram of the first reflective layer in the LED of FIG. 5 or FIG. 6;
FIG. 8 is a schematic structural diagram of an epitaxial layer grown on a growth substrate in an embodiment of the invention;
FIG. 9 is a schematic diagram of the formation of electrode holes in an epitaxial layer in accordance with one embodiment of the present invention;
FIG. 10 is a schematic diagram of a transparent conductive layer formed on the epitaxial layer according to an embodiment of the present invention;
FIG. 11 is a schematic view of a second insulating layer formed on the epitaxial layer in accordance with one embodiment of the present invention;
FIG. 12 is a schematic structural diagram illustrating a second reflective layer formed on a portion of the surface of the transparent conductive layer and a portion of the second insulating layer according to an embodiment of the present invention;
FIG. 13 is a schematic structural diagram illustrating a metal barrier layer formed on a portion of the surfaces of the second reflective layer and the second insulating layer according to an embodiment of the present invention;
FIG. 14 is a schematic structural diagram illustrating a first insulating layer formed on the surface of the metal barrier layer, the grooves and the sidewalls of the electrode holes in accordance with an embodiment of the present invention;
FIG. 15 is a schematic structural diagram illustrating a first electrode layer formed on the surface of the first insulating layer and at the bottom of the electrode hole according to an embodiment of the present invention;
FIG. 16 is a diagram illustrating a structure of a metal bonding layer formed on a surface of a first electrode layer according to an embodiment of the present invention;
FIG. 17 is a diagram illustrating a structure of a substrate bonded on a metal bonding layer according to an embodiment of the present invention;
FIG. 18 is a schematic view of the structure after the growth substrate has been removed in one embodiment of the present invention;
FIG. 19 is a schematic diagram of a second electrode formed on a metal barrier layer in accordance with an embodiment of the present invention;
fig. 20 is a flow chart illustrating a process for manufacturing a light emitting diode according to an embodiment of the present invention.
List of reference numerals:
1 substrate
2 metal bonding layer
3 first electrode layer
4 insulating layer
5 Metal Barrier layer
6 reflective layer
7 epitaxial layer
8 second electrode
001 growth substrate
100 substrate
200 metal bonding layer
301 first reflective layer
3011 first part
3012 second part
302 second electrode
302-1 electrode region
400 first insulating layer
500 metal barrier layer
501 first part
5011 groove
502 second part
600 second reflective layer
700 transparent conductive layer
800 second insulating layer
900 epitaxial layer
900-1 luminous zone
901 first semiconductor layer
902 active layer
903 second semiconductor layer
904 electrode hole
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1a provides a light emitting diode, which sequentially includes, from bottom to top: referring to fig. 1b, since the area of the metal barrier layer 5 is larger than that of the epitaxial layer 7, and the area of the metal barrier layer 5, which is larger than that of the epitaxial layer 7, can absorb light emitted from the epitaxial layer 7, and can also block light reflected by the first electrode layer 3 below, which is not favorable for the light-emitting efficiency of the light-emitting diode. In order to reduce the absorption and shielding of the metal barrier layer on light, referring to fig. 1c, in the prior art, the coverage area of the metal barrier layer 5 is generally reduced as a whole to avoid the absorption and shielding of the metal barrier layer 5 on light, however, the reduction of the area of the metal barrier layer 5 can reduce the 8 line width distance between the metal barrier layer 5 and the second electrode, when the second electrode 8 is formed to be over-etched, the etching solution easily exceeds the blocking range of the metal barrier layer 5 and leaks to the bottom layer, which is not beneficial to the protection of the bottom layer structure.
In order to solve the above technical problems, this embodiment provides a light emitting diode and a method for manufacturing the same, which not only can reduce absorption and shielding of a metal barrier layer to light, but also can avoid the problems that over-etching occurs when a second electrode is formed, and etching liquid leaks to a bottom layer.
Example 1
The present embodiment provides a light emitting diode, which sequentially includes: a substrate having a first surface and a second surface oppositely disposed;
the first reflecting layer is arranged above the substrate;
the first insulating layer is arranged above part of the first reflecting layer;
the metal barrier layer is arranged above part of the first insulating layer and comprises a first part and a second part, the first part is positioned below a light emitting area of an epitaxial layer of the light emitting diode, the second part is positioned below an electrode area of an electrode of the light emitting diode, and the first part and the second part form a continuous structure;
the second reflecting layer is arranged on part of the surface of the first part of the metal barrier layer and is coated by the first part of the metal barrier layer;
the epitaxial layer is positioned above the second reflecting layer and the first part of the metal barrier layer except the second reflecting layer, the epitaxial layer sequentially comprises a second semiconductor layer, an active layer and a first semiconductor layer, and the first reflecting layer penetrates through the second semiconductor layer, the active layer and part of the first semiconductor layer and is electrically connected with the first semiconductor layer; the active layer forms a light emitting area of the light emitting diode;
in the projection of the first surface of the substrate, at least part of the edge line of the first part of the metal barrier layer is positioned inside the edge line of the light emitting area, and the edge line of the second part of the metal barrier layer is positioned outside the edge line of the light emitting area. Therefore, the part without the metal barrier layer below the light emitting area can transmit the light emitted downwards by the epitaxial layer, and the light reflected to the light emitting surface by the first reflecting layer can be used for avoiding the absorption and the shielding of the metal barrier layer on the light.
Specifically, referring to fig. 2 and 3, the substrate 100 has a first surface and a second surface which are oppositely disposed, alternatively, the substrate 100 may be a conductive substrate, which may be a metal substrate such as a Si substrate or a CuW substrate, or an insulating substrate such as an AlN substrate, and the Si substrate is used in this embodiment. In an alternative embodiment, a metal bonding layer 200 is disposed on the first surface of the substrate 100, and the metal bonding layer 200 is used for tight connection between the substrate 100 and other layers.
The metal bonding layer 200 is disposed on the first surface of the substrate 100, and a portion of the metal bonding layer 200 penetrates through a portion of the epitaxial layer and extends to the first semiconductor layer of the epitaxial layer.
The first reflective layer 301 is disposed above the metal bonding layer 200. Alternatively, the material of the first reflective layer 301 may be a metal material with high reflectivity such as Ag or Al, and in this embodiment, a portion of the first reflective layer 301 penetrates through a portion of the epitaxial layer, extends to the first semiconductor layer in the epitaxial layer, and can be used as a first electrode electrically connected to the epitaxial layer.
A first insulating layer 400 disposed above a portion of the first reflective layer 301, wherein the first insulating layer 400 may be made of SiO2、Si3N4、TiO2、Ti2O3、Ti3O5、Ta2O5、ZrO2Etc. of one or more of the materials.
Referring to fig. 4, the metal barrier layer 500 is disposed above a portion of the first insulating layer 400, and the metal barrier layer 500 includes a first portion 501 and a second portion 502, where the first portion 501 and the second portion 502 are continuous structures. The first portion 501 is located below a light emitting region 900-1 of an epitaxial layer forming the light emitting diode, the second portion 502 is located below an electrode region 302-1 forming an electrode of the light emitting diode, and in a projection of the first surface of the substrate 100, the first portion 501 corresponds to the position of the light emitting region 900-1, and the second portion 502 corresponds to the position of the electrode region 302-1. In the present embodiment, the metal barrier layer 500 corresponds to a portion under the electrode region 302-1 of the second electrode on one side of the epitaxial layer. Alternatively, the material of the metal barrier layer 500 is a low-reflectivity metal material, and for example, may be one of Ti, Pt, Au, or Cr or an alloy of at least two of Ti, Pt, Au, or Cr.
The second reflective layer 600 is disposed on a portion of the surface of the first portion 501 of the metal barrier layer 500, and is covered by the first portion of the metal barrier layer 500. The second reflective layer 600 may be made of a metal material with high reflectivity such as Ag or Al. In this embodiment, the material of the second reflective layer 600 is Ag.
In an alternative embodiment, a second insulating layer 800 is further disposed above the second reflective layer 600, a transparent conductive layer 700 is embedded in the second insulating layer 800, and the transparent conductive layer 700 is disposed above the second reflective layer 600 and is in contact with the second reflective layer 600. In the present embodiment, it is preferable that the material of the second insulating layer 800 is the same as the material of the first insulating layer 400. In some embodiments, the material of the second insulating layer 800 may not be the same as the material of the first insulating layer 400.
An epitaxial layer 900 located above the second reflective layer 600 and the first portion 501 of the metal barrier layer 500 except the second reflective layer 600, and the epitaxial layer 900 sequentially includes a second semiconductor layer 903, an active layer 902, and a first semiconductor layer 901; the first reflective layer 301 penetrates through the second semiconductor layer 903, the active layer 902 and a part of the first semiconductor layer 901, and is electrically connected with the first semiconductor layer 901; the active layer 902 forms a light emitting region 900-1 of the light emitting diode; more specifically, the epitaxial layer 900 is positioned on the surface of the second insulating layer 800 above the second reflective layer 600, and forms a connection with the transparent conductive layer 700 within the second insulating layer 800. In this embodiment, the epitaxial layer 900 is a GaN-based epitaxial layer 900, the first semiconductor layer 901 is an N-GaN layer, the second semiconductor layer 903 is a P-GaN layer, and the active layer 902 is a GaN-based material layer.
In order to improve the light extraction efficiency of the light emitting diode and avoid the absorption and shielding of the metal barrier layer 500 by light, in this embodiment, referring to fig. 4, in the projection of the first surface of the substrate 100, the edge line of the second portion 502 of the metal barrier layer 500 is located outside the edge line of the light emitting region 900-1 (i.e., the epitaxial layer 900), and the edge line of the first portion 501 of the metal barrier layer 500 is located inside the edge line of the light emitting region 900-1 (i.e., the epitaxial layer 900), so that the projected area of the light emitting region 900-1 is larger than the projected area of the metal barrier layer 500, and thus, the portion of the light emitting region 900-1 having a projected area larger than the projected area of the metal barrier layer 500 can transmit light emitted by the epitaxial layer and can avoid the absorption and shielding of the metal barrier layer 500 by light reflected to the light exit surface by the first reflective layer 301. Optionally, the edge line of the second portion 502 of the metal barrier layer 500 is located outside the edge line of the electrode region 302-1, so that the projected area of the second portion 502 is larger than the projected area of the electrode region 302-1, and one portion of the second portion 502 larger than the electrode region 302-1 is used for blocking the etching solution from leaking to the lower layer when forming an electrode, and the other portion is used for connecting the first portion 501. Optionally, the distance D1 between the edge line of the second portion 502 of the metal barrier layer 500 and the edge line of the electrode region 302-1 is between 3 μm and 15 μm, so as to prevent the etching solution from leaking to the bottom layer beyond the blocking range of the metal barrier layer during over-etching. Optionally, in the projection of the first surface of the substrate 100, the edge line of the first portion 501 of the metal barrier layer 500 is located outside the edge line of the second reflective layer 600, and the distance D2 between the edge line of the first portion 501 of the metal barrier layer 500 and the edge line of the second reflective layer 600 is between 2 μm and 4 μm.
In an alternative embodiment, the first portion 501 of the metal barrier layer 500 is formed with a groove 5011 on an area other than the area surrounding the second reflective layer 600, the groove 5011 penetrates through the metal barrier layer 500, and at least a portion of the first reflective layer 301 is formed directly below the groove 5011. The slot 5011 can further transmit the light emitted downward from the epitaxial layer 900, and can prevent the blocking layer 500 from absorbing and blocking the light by the light reflected from the first reflective layer 301 to the light-emitting surface.
Example 2
The embodiment discloses a method for manufacturing a light emitting diode, and referring to fig. 20, the method for manufacturing a light emitting diode includes the steps of:
s101: providing a growth substrate, and forming an epitaxial layer on the growth substrate, wherein the epitaxial layer sequentially comprises a first semiconductor layer, an active layer and a second semiconductor layer, and the active layer forms a light emitting region of the light emitting diode.
Specifically, referring to fig. 8, a growth substrate 001 is provided, and a first semiconductor layer 901, an active layer 902 and a second semiconductor layer 903 are sequentially grown on the surface of the growth substrate 001 by using a chemical vapor deposition or physical vapor deposition method, wherein the growth substrate 001 may be one of a sapphire substrate, a Si substrate and a SiC substrate. In this embodiment, the epitaxial layer 900 is a GaN-based epitaxial layer 900, the first semiconductor layer 901 is an N-GaN layer, the second semiconductor layer 903 is a P-GaN layer, and the active layer 902 is a GaN-based material layer.
S102: an electrode hole is formed in the epitaxial layer, the electrode hole penetrating through the second semiconductor layer, the active layer, and a portion of the first semiconductor layer.
Specifically, referring to fig. 9, an electrode hole 904 is etched on a surface of the second semiconductor layer 903 such that the electrode hole 904 penetrates the second semiconductor layer 903, the active layer 902, and a portion of the first semiconductor layer 901; referring to fig. 10, a transparent conductive layer is formed on the surface of the second semiconductor layer 903, and a portion of the transparent conductive layer 700 is etched and left on the surface of the second semiconductor layer 903; referring to fig. 11, a second insulating layer 800 is formed on the surface of the remaining second semiconductor layer 903 and the sidewalls and bottom of the electrode hole 904, and the second insulating layer 800 is etched to remove a portion of the second insulating layer at the bottom of the electrode hole 904.
S103: a second reflective layer is formed over a portion of the second semiconductor layer.
Specifically, referring to fig. 12, the second reflective layer 600 is formed over the transparent conductive layer 700 and covers the transparent conductive layer 700.
S104: and in the projection of the first surface of the substrate, at least part of the edge line of the first part of the metal barrier layer is positioned at the inner side of the edge line of the light emitting region, and the edge line of the second part of the metal barrier layer is positioned at the outer side of the edge line of the light emitting region.
Specifically, referring to fig. 13, a metal barrier layer 500 is formed on a portion of the surface of the second reflective layer 600 and the second semiconductor layer 903, and referring to fig. 4, the metal barrier layer 500 includes a first portion 501 and a second portion 502, and the first portion 501 and the second portion 502 are continuous structures. The first portion 501 is located below a light emitting region 900-1 of an epitaxial layer forming the light emitting diode, the second portion 502 is located below an electrode region 302-1 forming an electrode of the light emitting diode, and in a projection of the first surface of the substrate 100, the first portion 501 corresponds to the position of the light emitting region 900-1, and the second portion 502 corresponds to the position of the electrode region 302-1. In the present embodiment, the metal barrier layer 500 corresponds to a portion under the electrode region 302-1 of the second electrode on one side of the epitaxial layer.
In the projection of the first surface of the substrate 100, the edge line of the first portion 501 of the metal barrier layer 500 is located inside the edge line of the light emitting region 900-1 (i.e., the epitaxial layer 900), and the edge line of the second portion 502 of the metal barrier layer 500 is located outside the edge line of the light emitting region 900-1 (i.e., the epitaxial layer 900). Optionally, the edge line of the second portion 502 of the metal barrier layer 500 is located outside the edge line of the electrode region 302-1, and the distance D1 between the edge line of the second portion 502 of the metal barrier layer 500 and the edge line of the electrode region 302-1 is between 3 μm and 15 μm. Optionally, in the projection of the first surface of the substrate 100, the edge line of the first portion 501 of the metal barrier layer 500 is located outside the edge line of the second reflective layer 600, and the distance D2 between the edge line of the first portion 501 of the metal barrier layer 500 and the edge line of the second reflective layer 600 is between 2 μm and 4 μm.
Alternatively, the material of the metal barrier layer 500 is a low-reflectivity metal material, and for example, may be one of Ti, Pt, Au, or Cr or an alloy of at least two components.
S105: and forming a first insulating layer, wherein the first insulating layer is formed above the metal barrier layer and on the side wall of the electrode hole.
Specifically, referring to fig. 14, the first insulating layer 400 may be deposited on the surface of the metal barrier layer 500, the grooves 5011, the bottom of the electrode hole 904, and the sidewalls by using a chemical vapor deposition method, and the first insulating layer 400 located at the bottom of the electrode hole 904 may be removed.
Alternatively, the material of the first insulating layer 400 may be SiO2、Si3N4、TiO2、Ti2O3、Ti3O5、Ta2O5、ZrO2Etc. of one or more of the materials.
S106: and forming a first reflecting layer, wherein at least part of the first reflecting layer is formed above the first insulating layer, and the first reflecting layer covers the first insulating layer on the side wall of the electrode hole and the bottom of the electrode hole and is electrically connected with the first semiconductor layer.
Specifically, referring to fig. 15, a first reflective layer 301 is deposited on the surface of the first insulating layer 400 and in the electrode hole 904, wherein the first reflective layer 301 covers the surface of the first insulating layer 400 and completely covers the bottom and the sidewall of the electrode hole 904.
Referring to fig. 16, a metal bonding layer 200 is formed on a surface of the first reflective layer 301, the metal bonding layer 200 fills the electrode hole 904, and a bonding surface is formed.
S107: and providing a substrate, forming the structure formed in the step to the first surface of the substrate, and removing the growth substrate.
Specifically, referring to fig. 17 and 18, a substrate 100 is provided, the structure formed in the above step is bonded to the first surface of the substrate 100 through the bonding surface of the metal bonding layer 200, and the growth substrate 001 is removed.
In an alternative embodiment, the method for manufacturing the light emitting diode further comprises: referring to fig. 19, the epitaxial layer 900 is etched to expose a portion of the metal barrier layer 500, and a second electrode 302 is formed on a second portion of the exposed metal barrier layer 500, the second electrode 302 being formed on one side of the epitaxial layer 900, as shown in fig. 3.
Example 3
The present embodiment discloses a light emitting diode, which has the same points as those in embodiment 1, and is not repeated herein, and the differences thereof are:
in this embodiment, referring to fig. 5, the epitaxial layer 900 has a circular shape, and a plurality of second electrodes 302 are formed around the epitaxial layer 900. To further reduce the shadowing and absorption of the light emitted by the epitaxial layer by the metal barrier layer, referring to fig. 6 and 7a, a groove 5011 is formed in the first portion 501 of the metal barrier layer 500 except for the region surrounding the second reflective layer 600. In order to achieve the conduction of current between the respective second electrodes 302 through the metal barrier layer 500, the present embodiment provides the grooves as a plurality of independent grooves 5011, and is formed in a discontinuous structure. In order to achieve uniform conduction of current, the respective recesses 5011 are uniformly provided at edge positions of the first portion 501 of the metal barrier 500.
In an alternative embodiment of the present embodiment, referring to fig. 6 and fig. 7a, the first reflective layer 301 includes a first portion 3011 and a second portion 3012, wherein the first portion 3011 is electrically contacted to the first semiconductor layer 901, and the second portion 3012 is disposed right below the slot 5011 and is formed as a metal ring, and the metal ring has an effect of reflecting light emitted from the upper epitaxial layer 900 to the light-emitting surface.
Example 4
The present embodiment discloses a method for manufacturing a light emitting diode, which is the same as that in embodiment 2 and is not repeated herein, except that:
in step S101, referring to fig. 5, after the epitaxial layer 900 is formed on the growth substrate 001, the method further includes: the epitaxial layer 900 is etched to form the epitaxial layer 900 in a circular shape.
In step S104, referring to fig. 6 and also referring to fig. 7a, when the metal barrier layer 500 is formed, a plurality of grooves 5011 are formed in the first portion 501 of the metal barrier layer 500 except for the region covering the second reflective layer 600, and the plurality of grooves 5011 are uniformly distributed at the edge position of the first portion of the metal barrier layer 500.
In step S107, referring to fig. 6 and also to fig. 7b, after the first reflective layer 301 is formed, the method further includes: the first reflective layer 301 is etched such that the first reflective layer 301 forms a discontinuous first portion 3011 and a discontinuous second portion 3012, the first portion 3011 is formed on the bottom of the electrode hole 904, the sidewall of the electrode hole 904, and a portion of the surface of the first insulating layer 400, and the second portion 3012 of the first reflective layer 301 is formed on a portion of the surface of the first insulating layer 400 and directly above the recess 5011.
In this embodiment, the method for manufacturing a light emitting diode further includes: referring to fig. 5 or 6, a plurality of uniformly distributed second electrodes 302 are formed on the surface of the metal barrier layer 500, and the second electrodes 302 are uniformly distributed around the epitaxial layer 900. Specifically, the number of the second electrodes 302 is 4.
In summary, the metal blocking layer of the light emitting diode of the present invention includes a first portion and a second portion, the metal blocking layer includes a first portion and a second portion, the first portion is located below a light emitting region of an epitaxial layer forming the light emitting diode, the second portion is located below an electrode region forming an electrode of the light emitting diode, and the first portion and the second portion form a continuous structure; in the projection of the first surface of the substrate, the edge line of the second part of the metal barrier layer is located on the outer side of the edge line of the light emitting area, at least part of the edge line of the first part of the metal barrier layer is located on the inner side of the edge line of the light emitting area, so that the projection area of the light emitting area is larger than that of the metal barrier layer, and the part of the light emitting area, which is larger than that of the metal barrier layer, can transmit light emitted downwards through the epitaxial layer due to the fact that the metal barrier layer is not shielded, and can also transmit the light reflected to the light emitting surface through the lower electrode or the first reflecting layer, and the metal barrier layer is prevented from absorbing and shielding the light.
Furthermore, in the projection of the first surface of the substrate, the edge line of the second part of the metal barrier layer is positioned outside the edge line of the electrode region, the distance between the edge line of the second part of the metal barrier layer and the edge line of the electrode region is 3-15 μm, and the metal barrier layer positioned outside the electrode region can effectively block the etching liquid when the electrode region is over-etched, so that the etching liquid is prevented from leaking to the bottom layer, and the reliability of the device is facilitated.
Furthermore, a groove is formed in the first part of the metal barrier layer in a region except for the region which wraps the second reflection layer, the groove penetrates through the metal barrier layer, and at least part of the first reflection layer is formed right below the groove.
The preparation method of the light-emitting diode comprises the structure of the light-emitting diode, and the light-emitting efficiency and the reliability of the light-emitting diode can be improved.
The specific embodiments are only for explaining the invention, not for limiting the invention, and the skilled in the art can modify the embodiments as required after reading the description, but only by the protection of the patent law within the scope of the claims of the present invention.
Claims (15)
1. A light emitting diode, comprising:
a substrate having a first surface and a second surface oppositely disposed;
the first reflecting layer is arranged above the substrate;
the first insulating layer is arranged above part of the first reflecting layer;
the metal barrier layer is arranged above part of the first insulating layer and comprises a first part and a second part, the first part is positioned below a light emitting area of an epitaxial layer of the light emitting diode, the second part is positioned below an electrode area of an electrode of the light emitting diode, and the first part and the second part form a continuous structure;
the second reflecting layer is arranged on part of the surface of the first part of the metal barrier layer and is coated by the first part of the metal barrier layer;
the epitaxial layer is positioned above the second reflecting layer and the first part of the metal barrier layer except the second reflecting layer, the epitaxial layer sequentially comprises a second semiconductor layer, an active layer and a first semiconductor layer, and the first reflecting layer penetrates through the second semiconductor layer, the active layer and part of the first semiconductor layer and is electrically connected with the first semiconductor layer; the active layer forms a light emitting area of the light emitting diode;
in the projection of the first surface of the substrate, at least part of the edge line of the first part of the metal barrier layer is positioned inside the edge line of the light emitting area, and the edge line of the second part of the metal barrier layer is positioned outside the edge line of the light emitting area.
2. The light-emitting diode according to claim 1, wherein in a projection of the first surface of the substrate, an edge line of the second portion of the metal barrier layer is located outside an edge line of the electrode region.
3. The LED of claim 2, wherein the distance between the edge line of the second portion of the metal barrier layer and the edge line of the electrode region is 3-15 μm.
4. The led of claim 1, wherein in a projection of the first surface of the substrate, an edge line of the first portion of the metal barrier layer is located outside an edge line of the second reflective layer.
5. The LED of claim 4, wherein in the projection of the first surface of the substrate, the distance between the edge line of the first portion of the metal barrier layer and the edge line of the second reflective layer is 2-4 μm.
6. The led of claim 1, wherein the first portion of the metal barrier layer has a groove formed in a region except for the region surrounding the second reflective layer, the groove penetrates the metal barrier layer, and at least a portion of the first reflective layer is disposed directly below the groove.
7. The LED of claim 6, wherein the recess is disposed in an edge region of the first portion of the metal barrier layer.
8. The LED of claim 6, wherein the recess is disposed at an edge of the first portion of the metal barrier layer, and wherein the recess is formed as a plurality of separate recesses.
9. The led of claim 7, wherein the plurality of grooves are uniformly distributed at the edge of the first portion of the metal barrier layer.
10. The LED of claim 6, wherein the first reflective layer comprises a first portion and a second portion, the first portion of the first reflective layer being in electrical contact with the first semiconductor layer, the second portion of the first reflective layer being disposed directly below the recess.
11. The LED of claim 1, wherein the material of the metal barrier layer comprises one or an alloy of at least two of Ti, Pt, Au, or Cr, and a metal bonding layer is disposed between the substrate and the first reflective layer.
12. The light-emitting diode according to claim 1, further comprising: the second insulating layer is arranged above the second reflecting layer, a transparent conducting layer is embedded in the second insulating layer, and the transparent conducting layer is connected with the second reflecting layer.
13. A method for manufacturing a light emitting diode, comprising:
providing a growth substrate, and forming an epitaxial layer on the growth substrate, wherein the epitaxial layer sequentially comprises a first semiconductor layer, an active layer and a second semiconductor layer, and the active layer forms a light emitting region of the light emitting diode;
forming an electrode hole in the epitaxial layer, wherein the electrode hole penetrates through the second semiconductor layer, the active layer and part of the first semiconductor layer;
forming a second reflective layer over a portion of the second semiconductor layer;
forming a metal barrier layer above the second reflecting layer and part of the second semiconductor layer, wherein a first part of the metal barrier layer corresponds to a light emitting area of the light emitting diode epitaxial layer, a second part of the metal barrier layer corresponds to an electrode area of an electrode of the light emitting diode, the first part and the second part form a continuous structure, in the projection of the first surface of the substrate, at least part of edge lines of the first part of the metal barrier layer are positioned on the inner side of edge lines of the light emitting area, and edge lines of the second part of the metal barrier layer are positioned on the outer side of the edge lines of the light emitting area;
forming a first insulating layer over the metal barrier layer and on sidewalls of the electrode hole;
forming a first reflecting layer, wherein at least part of the first reflecting layer is formed above the first insulating layer, covers the first insulating layer on the side wall of the electrode hole and the bottom of the electrode hole, and is electrically connected with the first semiconductor layer;
and providing a base plate, forming the structure formed in the step to the first surface of the base plate, and removing the growth substrate.
14. The method of claim 13, wherein in the projection of the first surface of the substrate, the edge line of the second portion of the metal barrier layer is located outside the edge line of the electrode region.
15. The method of claim 14, wherein a distance between an edge line of the second portion of the metal barrier layer and an edge line of the electrode region is 3 to 15 μm.
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Effective date of registration: 20231020 Address after: Yuanqian village, Shijing Town, Nan'an City, Quanzhou City, Fujian Province Patentee after: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 361009 no.1721-1725, Luling Road, Siming District, Xiamen City, Fujian Province Patentee before: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |