CN113345829B - 微型发光二极管的巨量转移方法、显示装置及其制作方法 - Google Patents
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Abstract
本发明提供了一种微型发光二极管的巨量转移方法、显示装置及其制作方法,通过在各所述LED芯粒背离所述生长基板的一侧表面覆盖有粘附层,并在转移基板的表面形成感应层;在转移过程中,通过键合使所述粘附层与所述感应层形成粘接,且感应层位于粘附层的上方;从而在后续通过掩膜并结合相应的感应源选择性破坏所述感应层和粘附层,使对应的LED芯粒自然掉落至目标基板时,破坏所示感应层所产生的多余能量可被所述粘附层吸收,继而有效保护LED芯粒不受感应源如光、热、电磁波等的伤害。
Description
技术领域
本发明涉及发光二极管领域,尤其涉及一种微型发光二极管的巨量转移方法、显示装置及其制作方法。
背景技术
微元件技术是指在衬底上以高密度集成的微小尺寸的元件阵列。目前,微间距发光二极管(Micro LED)技术逐渐成为研究热门,工业界期待有高品质的微元件产品进入市场。高品质微间距发光二极管产品会对市场上已有的诸如LCD/OLED的传统显示产品产生深刻影响。Micro-Led技术,即LED微缩化和矩阵化技术,指的是在一个芯片上集成高密度、微小尺寸的LED阵列的技术,以将像素点的距离从毫米级降低至微米级。由于Micro-Led性能上表现优越,继承了无机LED的高亮度、高良率、高可靠性、体积小、寿命长等优势,在显示领域的应用越来越广泛。
在制造微元件的过程中,首先在施体基板上形成微元件,接着将微元件转移到接收基板上。接收基板例如是显示屏。在微型发光二极管的制作过程中,巨量转移是微型发光二极管实现产业化的主要瓶颈,如何解决这一技术难题,成为微型发光二极管成本降低和量产的关键环节。
有鉴于此,本发明人专门设计了一种微型发光二极管的巨量转移方法、显示装置及其制作方法,本案由此产生。
发明内容
本发明的目的在于提供一种微型发光二极管的巨量转移方法、显示装置及其制作方法,以降低微型发光二极管巨量转移的工艺难度和成本。
为了实现上述目的,本发明采用的技术方案如下:
一种微型发光二极管的巨量转移方法,包括如下步骤:
步骤S01、提供一LED阵列结构,所述LED阵列结构包括生长基板及在所述生长基板表面形成的若干个呈阵列排布的LED芯粒,各所述LED芯粒包括水平结构LED芯粒或垂直结构LED芯粒;
步骤S02、沉积一粘附层,所述粘附层覆盖各所述LED芯粒背离所述生长基板的一侧表面,并填充相邻LED芯粒之间的间隙;
步骤S03、提供一转移基板,并在所述转移基板的表面形成感应层;
步骤S04、将步骤S03所述的转移基板与步骤S02所形成的LED阵列结构键合,使所述粘附层与所述感应层形成粘接;
步骤S05、去除所述生长基板;
步骤S06、通过掩膜并结合相应的感应源选择性破坏所述感应层和粘附层,使对应的LED芯粒自然掉落至目标基板。
优选地,所述粘附层的厚度为H,所述LED芯粒的高度为H1,则H1<H<2H1。
优选地,所述粘附层包括添加有感光剂和/或热敏剂的黏性材料。
优选地,所述粘附层包括紫外感光胶、硅胶、光刻胶、热熔胶、玻璃胶中的任意一种。
优选地,所述感应层包括热感应材料、紫外光感应材料、激光感应材料、辐射感应材料、等离子体感应材料、微波感应材料中的任意一种。
优选地,所述目标基板为自带粘性的材料层,包括蓝膜、薄膜、UV膜、热解粘膜、硅胶中的任意一种。
优选地,所述步骤S05还包括通过掩膜工艺将缺陷LED芯粒与所述生长基板同时去除。
优选地,所述生长基板包括蓝宝石、碳化硅、硅、氮化镓、氮化铝、砷化镓中的任意一种。
优选地,所述LED芯粒至少包括在所述生长基板表面依次堆叠的第一型半导体层、有源区及第二型半导体层,与所述第一型半导体层形成欧姆接触的第一电极,以及与所述第二型半导体层形成欧姆接触的第二电极。
本发明还提供了一种LED显示装置的制作方法,其采用上述任一项所述的微型发光二极管的巨量转移方法实现巨量转移。
本发明还提供了一种LED显示装置,其采用上述的LED显示装置制作方法而制作形成。
经由上述的技术方案可知,本发明提供的微型发光二极管的巨量转移方法,通过在各所述LED芯粒背离所述生长基板的一侧表面覆盖有粘附层,并在转移基板的表面形成感应层;在转移过程中,通过键合使所述粘附层与所述感应层形成粘接,且感应层位于粘附层的上方;从而在后续通过掩膜并结合相应的感应源选择性破坏所述感应层和粘附层,使对应的LED芯粒自然掉落至目标基板时,破坏所示感应层所产生的多余能量可被所述粘附层吸收,继而有效保护LED芯粒不受感应源如光、热、电磁波等的伤害。
同时,由于感应层的材料结构较为致密,在后续的清洗过程中需选择苛刻的物理、化学条件方可洗净LED芯粒,然而苛刻的物理、化学条件势必会影响LED芯粒的良率和电性;本发明提供的微型发光二极管的巨量转移方法,通过将粘附层直接接触并覆盖LED芯粒可有效避免感应层清洗的麻烦。
其次,本发明采用分开涂布感应层和粘附层,再利用粘附层本身的粘力,结合物理键合的方式,一方面对感应层和粘结层的涂布均匀性要求不高,生产成本低;另一方面可消除两者在涂布过程中产生的气泡。
然后,通过设置所述粘附层的厚度为H,所述LED芯粒的高度为H1,则H1<H<2H1,在确保LED阵列结构可通过粘附层与感应层有效键合的同时,避免在通过掩膜并结合相应的感应源选择性破坏所述感应层和粘附层时,因粘附层过厚导致LED芯粒脱落时受损。
进一步地,所述粘附层包括添加有感光剂和/或热敏剂的黏性材料,有利于吸收多余的光或热能,保护LED芯粒不受损伤,使其维持原有的光电性质。
本发明还提供一种LED显示装置的制作方法,在实现上述技术效果的同时,其操作简单,易于实现。
本发明还提供一种LED显示装置,采用上述转移方法形成,其结构简单、便于操作与实现。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据提供的附图获得其他的附图。
图1为本发明实施例所提供的微型发光二极管的巨量转移方法的流程示意图;
图2至图13为本发明实施例所提供的微型发光二极管的巨量转移方法所对应的结构示意图;
图中符号说明:100、生长基板;110、LED芯粒,170、掩膜,200、转移基板,210、第一光刻胶层,310、粘附层,320、感应层,500、目标基板,H、粘附层的厚度,H1、LED芯粒的高度,Y、感应源。
具体实施方式
为使本发明的内容更加清晰,下面结合附图对本发明的内容作进一步说明。本发明不局限于该具体实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
如图1所示,一种微型发光二极管的巨量转移方法,包括如下步骤:
步骤S01、如图2或图3所示,提供一LED阵列结构,LED阵列结构包括生长基板100及在生长基板100表面形成的若干个呈阵列排布的LED芯粒110,各LED芯粒110包括水平结构LED芯粒110或垂直结构LED芯粒110;
其中,图2示意了垂直结构LED芯粒110的阵列结构,图3示意了水平结构LED芯粒110的阵列结构;
值得一提的是,生长基板100的类型在本实施例中不受限制,例如,生长基板100包括蓝宝石、碳化硅、硅、氮化镓、氮化铝、砷化镓中的任意一种;同时,LED芯粒110的具体结构及材料构成在本实施例中不受限制。
在上述实施例的基础上,在本申请一个实施例中,LED芯粒110至少包括在生长基板100表面依次堆叠的第一型半导体层、有源区及第二型半导体层,与第一型半导体层形成欧姆接触的第一电极,以及与第二型半导体层形成欧姆接触的第二电极;需要说明的是,第一型半导体层、有源区、第二型半导体层的具体材料类型在本实施例中也可以不受限制,例如,第一型半导体层可以是但不限于N-GaN层,相应地,第二型半导体层可以是但不限于P-GaN层;同时,第一电极和第二电极的具体设置位置亦不受限制,只要满足第一电极与第一型半导体层形成欧姆接触,第二电极与第二型半导体层形成欧姆接触即可;
在上述实施例的基础上,在本申请一个实施例中,LED芯粒110为垂直结构LED芯粒110,此时,可通过导电性的生长基板100作为LED芯粒110的第一电极,如图2所示。
步骤S02、如图4或图5所示,沉积一粘附层310,粘附层310覆盖各LED芯粒110背离生长基板100的一侧表面,并填充相邻LED芯粒110之间的间隙;
其中,图4示意了在垂直结构LED芯粒110阵列表面沉积粘附层310,图5示意了在水平结构LED芯粒110阵列表面沉积粘附层310;
值得一提的是,粘附层310的类型在本实施例中不受限制,例如,粘附层310包括紫外感光胶、硅胶、光刻胶、热熔胶、玻璃胶中的任意一种。
在上述实施例的基础上,在本申请一个实施例中,粘附层310包括添加有感光剂和/或热敏剂的黏性材料。
步骤S03、如图6所示,提供一转移基板200,并在转移基板200的表面形成感应层320;
值得一提的是,转移基板200的类型在本实施例中不受限制,例如,材料为蓝宝石、氮化镓、二氧化硅等中的任意一种,其中转移基板200的材料与生长基板100的材料可以相同亦可以不同。
需要说明的是,感应层320的类型在本实施例中不受限制,例如,感应层320包括热感应材料、紫外光感应材料、激光感应材料、辐射感应材料、等离子体感应材料、微波感应材料中的任意一种。
步骤S04、如图7、图8所示,将步骤S03的转移基板200与步骤S02所形成的LED阵列结构键合,使粘附层310与感应层320形成粘接;
其中,图7示意了将图4所示的垂直结构LED芯粒110阵列与图6所示的转移基板200进行对位键合;图8示意了将图5所示的水平结构LED芯粒110阵列与图6所示的转移基板200进行对位键合。
需要说明的是,键合工艺在本实施例中不受限制,例如,静电键合、热键合等。
步骤S05、如图9、图10所示,去除生长基板100;
其中,图9示意了去除垂直结构LED芯粒110阵列的生长基板100;图10示意了去除水平结构LED芯粒110阵列的生长基板100。
在上述实施例的基础上,在本申请一个实施例中,去除生长基板100包括:利用激光剥离工艺,去除生长基板100,但本申请对此并不限定,在本申请其他实施例中,还可以利用其他去除工艺,去除生长基板100,具体视情况而定。
步骤S06、如图13所示,通过掩膜并结合相应的感应源Y选择性破坏感应层320和粘附层310,使对应的LED芯粒110自然掉落至目标基板500。
需要说明的是,目标基板500的具体材料类型在本实施例中不受限制,只要满足自带粘性的材料层即可,例如,目标基板500包括蓝膜、薄膜、UV膜、热解粘膜、硅胶中的任意一种。
在上述实施例的基础上,在本申请一个实施例中,在第一衬底背离LED阵列一侧形成第一掩膜版,包括:
如图13所示,在转移基板200背离LED芯粒110的一侧涂抹一层光刻胶,形成第一光刻胶层210;
对第一光刻胶层210进行曝光、显影,在转移基板200背离LED芯粒110一侧形成第一光刻胶图形作为第一掩膜版。
在本申请实施例中,第一掩膜版包括透光区域和不透光区域,以便于后续通过第一掩膜版的透光区域对光感应材料层进行照射,使得光感应材料层对应第一掩膜版的透光区域的部分分解。
需要说明的是,图13仅示意了对垂直结构LED芯粒110阵列进行掩膜并结合相应的感应源Y选择性破坏感应层320和粘附层310,使对应的LED芯粒110自然掉落至目标基板500;在本申请的其他实施例中,亦可对水平结构LED芯粒110阵列执行对应操作,不受限制。
同时,本申请的实施例中并不限制感应源Y的类型,只要满足与感应层320的材料敏度对应,通过感应源Y可实现对感应层320破坏即可。
在上述实施例的基础上,在本申请一个实施例中,粘附层310的厚度为H,LED芯粒110的高度为H1,则H1<H<2H1。
在上述实施例的基础上,在本申请一个实施例中,步骤S05还包括通过掩膜工艺将缺陷LED芯粒110与生长基板100同时去除,如图11、图12所示,其中对垂直结构LED芯粒110阵列进行掩膜170标记缺陷LED芯粒110后,将缺陷LED芯粒110与生长基板100同时去除;需要说明的是,在本申请的其他实施例中,亦可对水平结构LED芯粒110阵列进行掩膜将缺陷LED芯粒110与生长基板100同时去除,不受限制。同时,掩膜标记缺陷LED芯粒110的具体工艺亦不受限制,具体可参考步骤S06所示的掩膜工艺。
本实施例还提供了一种LED显示装置的制作方法,其采用上述任一项的微型发光二极管的巨量转移方法实现巨量转移。
本实施例还提供了一种LED显示装置,其采用上述的LED显示装置制作方法而制作形成。
经由上述的技术方案可知,本实施例提供的微型发光二极管的巨量转移方法,通过在各LED芯粒110背离生长基板100的一侧表面覆盖有粘附层310,并在转移基板200的表面形成感应层320;在转移过程中,通过键合使粘附层310与感应层320形成粘接,且感应层320位于粘附层310的上方;从而在后续通过掩膜并结合相应的感应源选择性破坏感应层320和粘附层310,使对应的LED芯粒110自然掉落至目标基板500时,破坏所示感应层320所产生的多余能量可被粘附层310吸收,继而有效保护LED芯粒110不受感应源如光、热、电磁波等的伤害。
同时,由于感应层320的材料结构较为致密,在后续的清洗过程中需选择苛刻的物理、化学条件方可洗净LED芯粒110,然而苛刻的物理、化学条件势必会影响LED芯粒110的良率和电性;本发明提供的微型发光二极管的巨量转移方法,通过将粘附层310直接接触并覆盖LED芯粒110可有效避免感应层320清洗的麻烦。
其次,本实施例采用分开涂布感应层320和粘附层310,再利用粘附层310本身的粘力,结合物理键合的方式,一方面对感应层320和粘结层的涂布均匀性要求不高,生产成本低;另一方面可消除两者在涂布过程中产生的气泡。
然后,通过设置粘附层310的厚度为H,LED芯粒110的高度为H1,则H1<H<2H1,在确保LED阵列结构可通过粘附层310与感应层320有效键合的同时,避免在通过掩膜并结合相应的感应源选择性破坏感应层320和粘附层310时,因粘附层310过厚导致LED芯粒110脱落时受损。
进一步地,粘附层310包括添加有感光剂和/或热敏剂的黏性材料,有利于吸收多余的光或热能,保护LED芯粒110不受损伤,使其维持原有的光电性质。
本实施例还提供一种LED显示装置的制作方法,在实现上述技术效果的同时,其操作简单,易于实现。
本实施例还提供一种LED显示装置,采用上述转移方法形成,其结构简单、便于操作与实现。
本说明书中各个实施例采用递进的方式描述,每个实施例重点说明的都是与其他实施例的不同之处,各个实施例之间相同相似部分互相参见即可。
还需要说明的是,在本文中,诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来,而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的物品或者设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种物品或者设备所固有的要素。在没有更多限制的情况下,由语句“包括一个……”限定的要素,并不排除在包括上述要素的物品或者设备中还存在另外的相同要素。
对所公开的实施例的上述说明,使本领域专业技术人员能够实现或使用本申请。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的,本文中所定义的一般原理可以在不脱离本申请的精神或范围的情况下,在其它实施例中实现。因此,本申请将不会被限制于本文所示的这些实施例,而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。
Claims (11)
1.一种微型发光二极管的巨量转移方法,其特征在于,包括如下步骤:
步骤S01、提供一LED阵列结构,所述LED阵列结构包括生长基板及在所述生长基板表面形成的若干个呈阵列排布的LED芯粒,各所述LED芯粒包括水平结构LED芯粒或垂直结构LED芯粒;
步骤S02、沉积一粘附层,所述粘附层覆盖各所述LED芯粒背离所述生长基板的一侧表面,并填充相邻LED芯粒之间的间隙;
步骤S03、提供一转移基板,并在所述转移基板的表面形成感应层;
步骤S04、将步骤S03所述的转移基板与步骤S02所形成的LED阵列结构键合,使所述粘附层与所述感应层形成粘接;
步骤S05、去除所述生长基板;
步骤S06、通过掩膜并结合相应的感应源选择性破坏所述感应层和粘附层,使对应的LED芯粒自然掉落至目标基板,且在破坏所述感应层时所产生的多余能量可被所述粘附层吸收。
2.根据权利要求1所述的微型发光二极管的巨量转移方法,其特征在于,所述粘附层的厚度为H,所述LED芯粒的高度为H1,则H1<H<2H1。
3.根据权利要求1所述的微型发光二极管的巨量转移方法,其特征在于,所述粘附层包括添加有感光剂和/或热敏剂的黏性材料。
4.根据权利要求1所述的微型发光二极管的巨量转移方法,其特征在于,所述粘附层包括紫外感光胶、硅胶、光刻胶、热熔胶、玻璃胶中的任意一种。
5.根据权利要求1所述的微型发光二极管的巨量转移方法,其特征在于,所述感应层包括热感应材料、紫外光感应材料、激光感应材料、辐射感应材料、等离子体感应材料、微波感应材料中的任意一种。
6.根据权利要求1所述的微型发光二极管的巨量转移方法,其特征在于,所述目标基板为自带粘性的材料层,包括蓝膜、薄膜、UV膜、热解粘膜、硅胶中的任意一种。
7.根据权利要求1所述的微型发光二极管的巨量转移方法,其特征在于,所述步骤S05还包括通过掩膜工艺将缺陷LED芯粒与所述生长基板同时去除。
8.根据权利要求1所述的微型发光二极管的巨量转移方法,其特征在于,所述生长基板包括蓝宝石、碳化硅、硅、氮化镓、氮化铝、砷化镓中的任意一种。
9.根据权利要求1所述的微型发光二极管的巨量转移方法,其特征在于,所述LED芯粒至少包括在所述生长基板表面依次堆叠的第一型半导体层、有源区及第二型半导体层,与所述第一型半导体层形成欧姆接触的第一电极,以及与所述第二型半导体层形成欧姆接触的第二电极。
10.一种LED显示装置的制作方法,其特征在于,采用权利要求1至9任一项所述的微型发光二极管的巨量转移方法实现巨量转移。
11.一种LED显示装置,其特征在于,采用权利要求10所述的LED显示装置的 制作方法而制作形成。
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WO2023108450A1 (zh) * | 2021-12-15 | 2023-06-22 | 厦门市芯颖显示科技有限公司 | 寻址转移设备 |
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CN111430405A (zh) * | 2020-04-27 | 2020-07-17 | 厦门乾照半导体科技有限公司 | 一种led结构及led阵列的巨量转移方法 |
CN111725124A (zh) * | 2020-05-27 | 2020-09-29 | 南京中电熊猫液晶显示科技有限公司 | 一种微型发光二极管的转移方法 |
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CN112582520B (zh) * | 2020-12-29 | 2021-10-08 | 苏州芯聚半导体有限公司 | 微发光二极管转移方法及显示面板 |
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