CN113327908A - 用于微电子组件的导电元件以及相关方法、组合件和电子系统 - Google Patents

用于微电子组件的导电元件以及相关方法、组合件和电子系统 Download PDF

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CN113327908A
CN113327908A CN202110204327.0A CN202110204327A CN113327908A CN 113327908 A CN113327908 A CN 113327908A CN 202110204327 A CN202110204327 A CN 202110204327A CN 113327908 A CN113327908 A CN 113327908A
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Prior art keywords
metal
solder
metal pillar
microelectronic
nickel
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CN202110204327.0A
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S·U·阿里芬
C·格兰西
K·辛哈
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Micron Technology Inc
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Micron Technology Inc
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Abstract

本申请案涉及用于微电子组件的导电元件以及相关方法、组合件和电子系统。一种微电子组件包括衬底，其表面上具有至少一个接合衬垫；和金属柱结构，其处于所述至少一个接合衬垫上，所述金属柱结构包括：金属柱，其处于所述至少一个接合衬垫上；和焊接材料，其有一部分处于所述金属柱内的储集层内且另一部分从所述金属柱的与所述至少一个接合衬垫相对的末端突出。还公开用于形成所述金属柱结构的方法、金属柱结构、并入有所述金属柱结构的组合件和系统。

Description

用于微电子组件的导电元件以及相关方法、组合件和电子 系统
优先权主张
本申请案主张2020年2月28日申请的标题为“用于形成用于微电子组件的元件的方法、相关导电元件以及并入有此类导电元件的微电子组件、组合件和电子系统(METHODSFOR FORMING ELEMENTS FOR MICROELECTRONIC COMPONENTS,RELATED CONDUCTIVEELEMENTS,AND MICROELECTRONIC COMPONENTS,ASSEMBLIES AND ELECTRONIC SYSTEMSINCORPORATING SUCH CONDUCTIVE ELEMENTS)”的美国专利申请序列号16/804,413的申请日的权益。
技术领域
本文公开的实施例涉及用于微电子组件的导电元件以及用于形成此类导电元件的方法。更具体地说，本文中所公开的实施例涉及呈包括焊料的导电柱结构形式的导电元件、形成此类导电柱结构的方法，以及并入有此类导电柱结构的微电子组件、组合件和电子系统。
背景技术
呈用焊料封盖的导电柱形式的导电元件广泛用于将微电子组件物理电连接到彼此并且在所谓的“倒装芯片”取向中物理电连接到衬底，所述用焊料封端的导电柱包括顶部覆有焊料团块的实心金属(例如，铜)柱，在所述“倒装芯片”取向中，微电子组件(例如，半导体裸片)倒转并且通过质量回流焊或热压接合以作用表面向下的方式接合到另一组件。虽然提供用于电力、接地/偏压和数据信号通信的相对稳健连接，但由于在热循环中的温度摆动增加方面的操作需求，在电子系统的操作寿命期间的热循环数目不断增加，这会增加焊点失效的可能性。此外，微电子组件外观尺寸日益变小并且随之而来地接合线(即，两个叠置组件之间的空间)厚度变小以适应封装高度限制，导电柱大小和节距变小并且每一柱的焊料体积随之减小以适应衬底设计的较大柱数量以及较小线间距需求，这些都会增加焊料体积不足(即，“焊料匮乏”)的可能性，从而导致在焊料和开放线路的表面上或焊料和断开电路内形成空隙。
图1A和1B说明顶部覆有焊接材料(例如，Sn/Ag焊接材料)盖层的圆筒形金属柱的实例。图2A展现铜柱P上的焊料盖层S与具有Ni涂层以防止电迁移的铜端子衬垫T之间的断开电路，其说明归因于不足焊料而从未达成焊点。另一方面，图2B展现在封盖铜柱P并且接触铜衬底迹线的一部分上方的Ni涂层的焊料S中呈空隙V形式的断开电路的可能性。虽然焊料S确实在铜柱P与Ni迹线涂层之间延伸，但这类连接在操作期间(如果不是在烧机和特征化为“早期失败(infant mortality)”期间)的热循环下非常容易发生失效。
发明内容
在实施例中，一种微电子组件包括衬底，其表面上具有至少一个接合衬垫；和金属柱结构，其处于所述至少一个接合衬垫上。所述金属柱结构包括：金属柱，其处于所述至少一个接合衬垫上；和焊接材料，其有一部分处于所述金属柱内的储集层内且另一部分从所述金属柱的与所述至少一个接合衬垫相对的末端突出。
在实施例中，一种工艺包括清洁微电子组件的上面具有接合衬垫的表面并且将晶种材料沉积于所述表面上；施加并图案化第一光致抗蚀剂材料以暴露所述接合衬垫上的晶种材料并且将焊接材料立柱电镀到所述暴露的晶种材料上并移除所述第一光致抗蚀剂材料。施加并图案化第二光致抗蚀剂材料以使环绕所述焊料立柱的晶种材料区域暴露；在所述接合衬垫上电镀镍管达大约所述焊料立柱的高度并且移除所述第二光致抗蚀剂材料。施加并图案化第三光致抗蚀剂材料以使环绕所述镍管的所述接合衬垫上的晶种材料区域暴露；在所述接合衬垫上电镀铜套管达大约所述镍管的高度并且移除所述第三光致抗蚀剂材料。施加并图案化第四光致抗蚀剂材料以使所述镍管和铜套管的上部末端暴露；在所述镍管和铜套管的所述上部末端上方电镀镍套环并且移除所述第四光致抗蚀剂材料。施加并图案化第五光致抗蚀剂材料以使所述焊料立柱和所述镍套环的顶部暴露；将焊接材料头电镀到所述焊料立柱和所述镍套环上以形成金属柱结构；并且清洁所述金属柱结构和周围表面。
在实施例中，一种工艺包括清洁微电子组件的上面具有接合衬垫的表面并且将晶种材料沉积于所述表面上；施加并图案化第一光致抗蚀剂材料以暴露所述接合衬垫上的晶种材料；将焊接材料立柱电镀到所述暴露的晶种材料上并且移除所述第一光致抗蚀剂材料。施加并图案化第二光致抗蚀剂材料以使环绕所述焊料立柱的晶种材料区域暴露；在所述接合衬垫上电镀镍管达大约所述焊料立柱的高度并且移除所述第二光致抗蚀剂材料。施加并图案化第三光致抗蚀剂材料以使所述焊料立柱的顶部和所述镍管的上部末端暴露；将焊接材料头电镀到所述焊料立柱和所述镍管的上部末端上以形成金属柱结构；和清洁所述金属柱结构和周围表面。
在实施例中，一种微电子组件组合件包括第一微电子组件；第二微电子组件，其至少部分地叠置在所述第一微电子组件上；和金属柱结构，其在所述第一微电子组件和所述第二微电子组件之间延伸。所述金属柱结构包括所述第一微电子组件的接合衬垫上的管状金属柱和焊接材料，每一金属柱结构的所述焊接材料的一部分位于所述管状金属柱的内部提供的储集层内且所述焊接材料的另一部分从所述管状金属柱的末端突出并且固定到所述第二微电子组件的端子结构。
在实施例中，一种用于微电子组件的金属柱结构，其包括：金属管，其固定到接合衬垫；和焊接材料，其处于所述金属管内并且从所述金属管的与所述接合衬垫相对的末端延伸。
在实施例中，一种结合微电子组件的导电结构的方法包括：将第一微电子组件放置于第二微电子组件上方；使从所述第一微电子组件突出的金属柱结构与所述第二微电子组件的端子结构对齐；和将所述第一和第二微电子组件加热到高于处于所述金属柱结构的金属柱内并且从所述金属柱突出的焊接材料的熔点的温度以致使从所述金属柱突出的熔融焊接材料芯吸到所述端子结构并且从所述金属柱内拉吸熔融焊接材料。将所述第一和第二微电子组件的温度降低到低于所述焊接材料的所述熔点以固化所述焊接材料从而接合到所述金属柱的内表面并且接合到所述端子结构。
在实施例中，一种电子系统包括一或多个输入装置；一或多个输出装置；一或多个微处理器装置；和一或多个存储器装置；所述输入装置、输出装置、微处理器装置和存储器装置中的至少一个配置为微电子组件。所述输入装置、输出装置、微处理器装置和存储器装置中的至少一个配置有衬底，其中至少一个微电子组件包括通到另一微电子组件或通到衬底的电连接，所述电连接配置为具有焊接材料的管状金属柱，所述焊接材料接合到所述管状金属柱的内部，从所述内部延伸并且接合到所述另一微电子组件或所述衬底。
附图说明
图1A和1B是用焊料封盖的圆筒形金属柱的实例的显微照片；
图2A是归因于焊料体积不足引起的用焊料封端的圆筒形金属柱与末端衬垫之间的断开电路的显微照片；
图2B是圆筒形金属柱与导电迹线之间的焊点的显微照片，所述焊点归因于焊料体积不足而存在内部空隙；
图3是其上具有用焊料封盖的圆筒形金属柱结构的衬底的示意性侧面立视图；
图4A-4C是使用用焊料封盖的圆筒形金属柱结构形成焊点以及后续发生失效的进程的示意图侧面立视图；
图5是呈金属柱结构形式的导电元件的实施例的示意性侧面立视图，且图5A是在图5的截面线A-A上所取的横截面，其中所述金属柱结构包含封盖金属柱并且延伸到金属柱的内部储集层中的焊料；
图6A和6B是使用图5和5A的金属柱结构形成焊点的示意图横截面立视图；
图7是呈包含焊料盖层并且延伸到金属柱的内部储集层中的金属柱结构形式的导电元件的实施例的示意性侧面立视图，且图7A是在图7的截面线A-A上所取的横截面；
图8A和8B是使用图7和7A的金属柱结构形成焊点的示意图横截面立视图；
图9是根据本公开的实施例的用于形成图5和5A的金属柱结构的工艺的流程图；
图10是根据本公开的实施例的用于形成图7和7A的金属柱结构的工艺的流程图；和
图11是根据本公开的实施例的包含微电子组件的基于处理器的系统的框图，所述微电子组件包含包括呈金属柱结构形式的导电元件的互连件。
具体实施方式
描述呈包括金属柱的金属柱结构形式的导电元件，以及用于制造此类金属柱结构的工艺、配备有此类金属柱结构的微电子组件和包括如此配备的微电子组件的电子系统，所述金属柱具有封盖所述金属柱并且延伸到金属柱的内部储集层中的焊料。
以下描述提供具体细节例如大小、形状、材料成分和定向以便提供对本公开的实施例的充分描述。然而，所属领域的技术人员应理解且了解，可在未必使用这些具体细节的情况下实践本公开的实施例，因为本公开的实施例可结合行业中使用的常规制造技术来实践。另外，下文提供的描述可能不形成用于制造具有封盖柱并延伸到柱的内部储集层中的焊料的金属柱结构、配备有此类金属柱结构的微电子组件或包含此类金属柱结构的设备(例如，微电子组件组合件、电子系统等)的完整工艺流。下文仅详细地描述理解本公开的实施例所必需的那些工艺动作和结构。可通过常规制造工艺来执行额外动作以形成如本文所描述的完整金属柱结构、配备有此类金属柱结构的完整微电子组件或包含金属柱结构的完整设备(例如完整微电子组件组合件、电子系统等)。
本文中呈现的图式仅出于说明性目的，且并不意图为任何特定材料、组件、结构、装置或系统的实际视图。预期图中所描绘的形状将因例如制造技术和/或公差而有变化。因此，本文中所描述的实施例不应解释为限于如所说明的特定形状或区，而是包含例如由制造引起的形状偏离。举例来说，说明或被描述为箱形的区可具有粗糙和/或非线性特征，且说明或描述为圆形的区可包含一些粗糙和/或线性特征。此外，所说明表面之间的锐角可以是圆角，且反之亦然。因此，图中所说明的区在性质上是示意性的，且其形状并不意图说明区的精确形状并且不限制本发明权利要求的范围。各图未必按比例绘制。
如本文中所使用，术语“纵向”、“竖直”、“横向”和“水平”是参考其中或其上形成一或多个结构和/或特征的衬底(例如，基底材料、基底结构、基底构造等)的主平面并且不一定由地球重力场界定。“横向”或“水平”方向是基本上平行于衬底的主平面的方向，而“纵向”或“竖直”方向是基本上垂直于衬底的主平面的方向。衬底的主平面由与衬底的其它表面相比具有相对大的面积的衬底表面界定。
如本文中所使用，例如“下面”、“下方”、“下部”、“底部”、“上面”、“上方”、“上部”、“顶部”、“前面”、“后部”、“左侧”、“右侧”等等空间相对术语可为了便于描述而用于描述一个元件或特征与如图中所说明的另一或多个元件或特征的关系。除非另外指定，否则除图中所描绘的取向之外，空间相对术语还意图涵盖材料的不同取向。举例来说，如果图式中的材料倒置，那么被描述为在其它元件或特征“上方”或“上面”或“上”或“顶部上”的元件将定向于所述其它元件或特征的“下方”或“下面”或“下”或“底部”。因此，术语“上”可取决于使用术语的上下文而涵盖上方和下方两种取向，这对于所属领域的技术人员来说将是显而易见的。材料可以其它方式定向(例如，旋转90度、倒置、翻转)，且本文中所用的空间相对描述词可相应地进行解释。
如本文中所使用，除非上下文另外明确指示，否则单数形式“一(a/an)”和“所述(the)”意图同样包含复数形式。
如本文中所使用，术语“被配置成”和“配置”指代以预定方式促进至少一个结构和至少一个设备中的一或多个的操作的所述结构和所述设备中的一或多个的大小、形状、材料成分、定向和布置。
如本文中所使用，关于给定参数、性质或条件的术语“基本上”意指且包含在所属领域的一般技术人员将理解的给定参数、性质或条件满足方差度(如在可接受制造公差内)的程度。借助于实例，视大体上满足的特定参数、性质或条件而定，所述参数、性质或条件可至少90.0％满足、至少95.0％满足、至少99.0％满足或甚至至少99.9％满足。
如本文中所使用，关于特定参数的数值的“约”或“大致”包含所属领域的一般技术人员将理解在特定参数的可接受公差内的数值和数值的变化程度。举例来说，关于数值的“约”或“大致”可包含额外数值，所述额外数值处于数值的90.0％到110.0％范围内，例如处于数值的95.0％到105.0％范围内，处于数值的97.5％到102.5％范围内，处于数值的99.0％到101.0％范围内，处于数值的99.5％到100.5％范围内，或处于数值的99.9％到100.1％范围内。
如本文所使用，除非另有指示，否则术语“层”和“膜”意指且包含驻留于结构上的材料层级、片材或涂层，所述层级或涂层在材料各部分之间可以是连续或不连续的，且其可为共形或非共形的。
如本文中所使用，术语“衬底”意指且包含其上形成额外材料的基底材料或构造。所述衬底可为半导体衬底、支撑结构上的基底半导体层、金属电极、具有一或多种材料、层、结构或区形成于其上的半导体衬底。半导体衬底上的材料可包含但不限于半导电材料、绝缘材料、导电材料等。所述衬底可为常规硅衬底或包括一层半导电材料的其它块状衬底。如本文所用，术语“块状衬底”不仅意指并包含硅晶片，而且还意指并包含绝缘体上硅(“SOI”)衬底，如蓝宝石上硅(“SOS”)衬底和玻璃上硅(“SOG”)衬底、基底半导体基础上的硅外延层和其它半导体或光电材料，如硅锗、锗、砷化镓、氮化镓和磷化铟。所述衬底可经掺杂或未经掺杂。术语“衬底”还意指且包含有机衬底，例如具有呈迹线形式且插入介电层(例如，树脂-玻璃编织聚合物)的多个金属层的衬底。举例来说,常规BGA封装包含组织衬底一侧上的多个裸片和包封体(例如环氧模塑料(EMC))以及另一侧上的焊球阵列。
如本文所使用，术语“包括”、“包含”、“含有”、“其特征在于”和其语法等同物是包含性的或开放的术语，不排除额外的未列出元件或方法步骤，且还包含更具限制性的术语“由…组成”和“基本上由…组成”以及其语法等同物。
如本文中所使用，关于材料、结构、特征或方法动作的术语“可”指示此类预期供在实施本公开的实施例时使用，且此类术语优先于在更具界定性术语“是”意义上使用以便避免对于应或必须排除可与其组合使用的其它兼容材料、结构、特征和方法的任何暗示。
如本文所使用，术语“微电子组件”意指且包含(借助于非限制性实例)：半导体裸片；通过除半导电活动之外呈现功能的裸片；微机电系统(MEMs)装置；包括多个裸片的衬底，包含常规晶片以及上文所提及的其它块状衬底；和包含多于一个裸片方位的部分晶片和衬底。
可在描绘为流程图、流图、结构图或框图的工艺方面描述实施例。虽然流程图可将操作动作描述为顺序工艺，但这些动作中的许多可以另一顺序、并行地或基本上同时执行。另外，可重新布置动作的次序。工艺可对应于方法、线程、函数、程序、子例程、子程序、其它结构或其组合。此外，本文公开的方法可以硬件、软件或这两者实施。如果以软件来实施，那么可将功能作为一或多个指令或代码存储在计算机可读媒体上或经由计算机可读媒体传输。计算机可读媒体包含计算机存储媒体和通信媒体两者，通信媒体包含促进将计算机程序从一处传送到另一处的任何媒体。
在本说明书中且为方便起见，相同或类似的附图标记可用于标识各附图之间共同的特征和元件。
现在参考图3和4A-4C的图式，用焊料封盖的金属(例如，铜)柱结构100的实例可包括圆筒形实心铜柱102，其安装到呈半导体裸片SD形式的微电子组件的接合衬垫B，并且以焊接材料(例如，SnAg)104封盖并且在铜柱102和焊接材料104之间具有镍阻障层106以防止铜溶解于焊料中。如图4A所示，为将金属柱结构100接合到另一微电子组件110(例如另一半导体裸片或内插件)的端子衬垫，或接合到某一其它衬底的端子衬垫或导电迹线(一般在本文中被称作“端子结构”)，在所谓的“倒装芯片”取向中倒转半导体裸片SD。接着将金属柱结构100与其它微电子组件110的端子结构108对准，并且加热组合件以及附近的焊接材料104和端子结构108。举例来说，可通过使用接合头施加法向力和热量对组合件进行热压接合来实现加热，或通过在质量回流焊工艺中传送组合件通过烘箱来实现加热。如图4B中所示，当组合件的温度超过焊接材料104的熔点时，组合件转变到液相焊料状态并且在存在助焊剂材料的情况下芯吸到端子结构108的材料(例如，铜)。理想地，当组合件冷却时，焊接材料104在固态中接合到端子结构并且形成稳健的物理电连接。然而，如图4C中所描绘，随着柱大小、柱之间的节距和接合线粗细变得越来越小，焊接材料104的体积可不足，造成预期焊点区中的上述焊料匮乏。因此，焊接材料104未能形成或维持大部分焊接材料104m之间的接合，且焊接材料104r的剩余部分芯吸到端子结构108。当此情境发生时，断开电路可立即形成或在烧机和特征化为早期失败期间形成，或可在组合件的正常操作期间经历数个热循环之后的稍后时间形成。因此，可损害电力、接地/偏压和/或数据信号发射完整性。
现在参考图5、5A、6A和6B，说明根据本公开的呈用焊料封盖的金属柱结构200形式的导电元件的实施例。参考图5和5A，管状金属柱结构200安装到半导体裸片SD的接合衬垫B。管状金属柱结构200包括阻隔材料(例如镍)管202T，其在上部在金属(例如铜)外部套管202S上方延伸的范围上具有一体式套环202C。可采用其它金属材料作为阻隔，例如钨、钯、铂、金，以及例如镍合金，例如用钴、锌、铜或铁合金化的镍。此外，可采用例如金的其它金属材料用于外部套管202S。一般来说，容易发生电镀的金属可用于管202T和外部套管202S，受镀覆时间、对焊料的反应和成本影响。管202T和外部套管202S的壁厚可不同，如图5和5A中所描绘，或大体相同，如图6A和6B中所描绘。壁厚对于本公开的实施例并非关键的，只要维持管状金属柱结构200的结构完整性即可，且管202T的阻隔材料具有足以防止外部套管202S的材料与焊接材料反应的厚度。管202T的内部在底部敞开，暴露接合衬垫的一部分，并且提供以接合衬垫和管202T的内侧壁为界的储集层R。焊接材料(例如，SnAg)204延伸到储集层R中同时突出到高于管202T并且在套环202C上方横向延伸，这也可表征为具有套环202C的凸缘管202T以防止外部套管202S的金属溶解于焊接材料204中。因此，对于相同的柱宽度和高度以及相同的设计接合线粗细，套环202C上方的焊接材料204的体积可相当于如上文关于图3和4A-4C所描述的实例金属柱结构中的焊接材料的总体积。然而，管202T内存在含有焊接材料204的补充体积204S的储集层R可取决于管202T和外部套管202S的组合壁厚T而允许焊接材料体积增加例如约百分之五十(50％)到约百分之八十(80％)。
参考图6A和6B，为了将金属柱结构200接合到另一微电子组件210(例如另一半导体裸片或内插件)的端子衬垫，或接合到某一其它衬底的端子衬垫或导电迹线(一般在本文中被称作“端子结构”)，在所谓的“倒装芯片”取向中倒转半导体裸片SD。接着将金属柱结构200与如图6A中所示的其它微电子组件的端子结构208对准，并且加热组合件以及附近的焊接材料204和端子结构208。举例来说，可通过使用接合头施加法向力和热量对组合件进行热压接合来实现加热，或通过在质量回流焊工艺中传送组合件通过烘箱来实现加热。如图6B中所示，当组合件的温度超过焊接材料204的熔点时，组合件转变到液相焊料状态并且在存在助焊剂材料的情况下芯吸到端子结构208的材料(例如，铜)，朝向并亲密接触端子结构208，其中归因于焊料分子的内聚力，端子结构208的可润湿性拉吸熔融焊接材料204的头端204H，同时初始含于储集层R中的焊接材料204的补充体积204S2的一部分在焊接材料204的可润湿性提供的对铜端子结构208的粘合力下从储集层R向下向外流动，且残存于管202T内的焊接材料204的补充体积204S1的另一部分维持与管202T的内壁212的连续接触。当组合件冷却时，焊接材料固化且焊接材料204的头端204H在固态中接合到端子结构208且补充体积204S1中的一些保持于管202T内并且接合到管202T的内壁212以归因于可用于焊点的焊接材料204体积增加而形成稳健的物理电连接。因此，在储集层R内存在一或多个空隙V不会不利地影响焊点，且组件之间的电力、接地/偏压和/或数据信号完整性增强。
现在参考图7、7A、8A和8B，说明根据本公开的呈用焊料封盖的金属柱结构300形式的导电元件的另一实施例。参考图7和7A，金属柱结构300安装到半导体裸片SD的接合衬垫(未示出)。金属柱结构300包括不与焊料反应的阻隔材料(例如镍、钨、钯、铂、金，或用钴、锌、铜或铁合金化的镍)管302。管302可具有大于管202T的壁厚的壁厚(但并不如此要求)，所述壁厚可近似管202T和外部套管202S的壁组合壁厚。管302T的内部在底部敞开，暴露接合衬垫的一部分，并且提供储集层R，焊接材料(例如，SnAg)304延伸到所述储集层R中同时突出到高于管302并且在管302的壁302W上方横向延伸。因此，对于相同的柱宽度和高度以及相同的设计接合线粗细，管302的顶部上方的焊接材料304的体积可相当于如上文关于图3和4A-4C所描述的常规金属柱结构中的焊接材料的总体积。然而，管302内存在含有焊接材料304的补充体积304S的储集层R可取决于管302的壁厚而允许焊接材料体积增加例如约百分之五十(50％)到约百分之八十(80％)。
参考图8A和8B，为了将金属柱结构300接合到另一微电子组件310(例如另一半导体裸片或内插件)的端子衬垫，或接合到某一其它衬底的端子衬垫或导电迹线(一般在本文中被称作“端子结构”)，在所谓的“倒装芯片”取向中倒转半导体裸片SD。接着将金属柱结构300与如图8A中所示的其它微电子组件310的端子结构308对准，并且加热组合件以及附近的焊接材料304和端子结构308。举例来说，可通过使用接合头施加法向力和热量对组合件进行热压接合来实现加热，或通过在质量回流焊工艺中传送组合件通过烘箱来实现加热。如图8B中所示，当组合件的温度超过焊接材料304的熔点时，组合件转变到液相状态并且在存在助焊剂材料的情况下芯吸到端子结构308的材料(例如，铜)，朝向并亲密接触端子结构308，其中端子结构308的可润湿性拉吸熔融焊接材料304的头端304H，同时初始含于储集层R中的焊接材料304的补充体积304S2的一部分归因于焊料分子的内聚力而从储集层R向下向外流动，且焊接材料304的补充体积304S1的另一部分保持于管302内从而维持与管302的内壁312的连续接触。当组合件冷却时，焊接材料固化且焊接材料304的头端304H在固态中接合到端子结构308且焊接材料304的补充体积304S1中的一些接合到管302的内壁312，从而归因于可用于焊点的焊接材料304体积的增加而形成稳健的物理电连接。因此，在储集层R内存在一或多个空隙V不会不利地影响焊点，且组件之间的电力、接地/偏压和/或数据信号完整性增强。
所属领域的一般技术人员应了解，本公开的实施例的实施方案独立于所采用的特定焊接材料，或独立于所采用的金属柱的材料、高度、宽度或形状，只要金属柱结构的组件的材料、焊接材料和焊接材料将接合到的端子结构为了相互接合而兼容即可。还应了解，可使用现有材料、工艺和设备实施呈本公开的实施例的金属柱结构形式的导电元件。金属柱结构的实施例的实施方案可增加在内部和外部检核工艺期间的产品(即，微电子组件)良率，并且降低在烧机和热循环测试期间的早期失败。焊料体积所得焊点稳健性的增加也可增加配备有金属柱结构的微电子组件的耐久性，尤其是在例如汽车和服务应用等高热应力环境中。在维持产品可靠性下，可在适应和促进越来越小的外观尺寸、柱节距和大小以及越来越低的接合线粗细的同时实现上述和其它优点。
此外，虽然已在出于相邻微电子组件之间的电力、接地/偏压和数据信号发射目的而连接柱和接合衬垫的上下文中描绘和描述了形成为用焊料封盖的金属柱结构200和300的导电元件，但此类导电元件也可具有作为组件之间的支腿元件或支座元件的实用性，此类支腿或支座元件与相邻组件(即，连接到虚设接合衬垫的虚设柱)的电路系统隔离并且放置于适当方位以提供堆叠式微电子组件的结构支撑并且提供叠置组件之间的介电材料(例如，不导电膜(NCF)、晶片级底部填充物(WLUF)、毛细底部填充物)厚度的经增强接合线均匀性。
图9描绘用于制作呈图5和5A的实施例的金属柱结构形式的导电元件的实例工艺流400。在动作402中，清洁微电子组件(例如，半导体裸片)的表面(例如，作用表面)，并且将金属晶种材料沉积(例如，溅镀)到表面上。在动作404中，用第一光致抗蚀剂材料覆盖金属晶种材料，接着进行图案化(此类项目包含暴露和显影，这与常规技术一样)，暴露组件的表面上的接合衬垫的中心区上的晶种材料。在动作406中，将焊接材料立柱电镀到暴露的晶种材料上并且移除第一光致抗蚀剂材料。在动作408中，施加并图案化第二光致抗蚀剂材料以使接合衬垫上的环绕焊料立柱的晶种材料区域暴露，并且在动作410中，在接合衬垫上电镀镍管达大约焊料立柱的高度并且移除第二光致抗蚀剂材料。在动作412中，施加并图案化第三光致抗蚀剂材料以使接合衬垫上的环绕镍管的晶种材料区域暴露。在动作414中，在接合衬垫上电镀铜套管达大约镍管的高度并且移除第三光致抗蚀剂材料。在动作416中，施加并图案化第四光致抗蚀剂材料以使镍管和铜套管的上部末端暴露。在动作418中，在镍管和铜套管的上部末端上方电镀镍套环并且移除第四光致抗蚀剂材料。在动作420中，施加并图案化第五光致抗蚀剂材料以使焊料立柱和镍套环的顶部暴露。在动作422中，将焊接材料头电镀到焊料立柱和镍套环上以完成金属柱结构。在动作424中，通过例如湿剥离、除渣和湿蚀刻来清洁金属柱结构和环绕表面，并且在动作426中，可执行计量以确定金属柱结构的高度、宽度、节距和恰当方位。相应光致抗蚀剂可各自具有相同配制物，或不同配制物，其选择并非用以工艺的材料选择。在另一工艺方法中，铜柱可电镀到晶种材料上，接着进行蚀刻以形成底部与接合衬垫相邻的杯部，并且接着在铜杯部上方电镀例如镍的阻隔材料以形成另一杯部，其中阻隔材料套环在铜杯部的壁上方延伸。作为另一替代方案，并非将焊接材料电镀为初始立柱，而是可通过适当掩模和电镀首先形成柱结构的剩余部分，将柱浸入助焊剂并且用例如熔融状态的焊接材料填充储集层，焊接材料芯吸到储集层中，柱上方的多余焊接材料的表面张力在凝固后即刻形成柱上的头端。
图10描绘用于制作呈图7和7A的实施例的金属柱结构形式的导电元件的实例工艺流500。在动作502中，清洁微电子组件(例如，半导体裸片)的表面(例如，作用表面)，并且将金属晶种材料沉积(例如，溅镀)到表面上。在动作504中，用第一光致抗蚀剂材料覆盖金属晶种材料，接着进行图案化(此类项目包含暴露和显影，这与常规技术一样)，以暴露组件的表面上的接合衬垫的中心区上的晶种材料。在动作506中，将焊接材料立柱电镀到暴露的晶种材料上并且移除第一光致抗蚀剂材料。在动作508中，施加并图案化第二光致抗蚀剂材料以使环绕焊料立柱的接合衬垫区域上的晶种材料暴露，并且在动作510中，在接合衬垫上电镀镍管达大约焊料立柱的高度并且移除第二光致抗蚀剂。在动作512中，施加并图案化第三光致抗蚀剂材料以使焊料立柱的顶部和镍管的上部末端暴露。在动作514中，将焊接材料头电镀到焊料立柱和镍管的上部末端以完成金属柱结构。在动作516中，通过例如湿剥离、除渣和湿蚀刻来清洁金属柱结构和环绕表面，并且在动作518中，可执行计量以确定金属柱结构的高度、宽度、节距和恰当方位。相应光致抗蚀剂可各自具有相同配制物，或不同配制物，其选择并非用以工艺的材料选择。作为另一替代方案，并非将焊接材料电镀为初始立柱，而是可通过适当掩模和电镀首先形成柱结构的剩余部分，将柱浸入焊料并且用焊接材料填充储集层，例如焊接材料在熔融状态中芯吸到储集层中，柱上方的多余焊接材料的表面张力在凝固后即刻形成柱上的头端。
包含根据本公开的实施例的金属柱结构的微电子组件可用于电子系统中。举例来说，图11是根据本公开的实施例的电子系统603的框图。电子系统603可包括例如计算机或计算机硬件组件、服务器或其它网络连接硬件组件、蜂窝电话、数码相机、个人数字助理(PDA)、便携式媒体(例如，音乐)播放器、具Wi-Fi或蜂窝功能的平板计算机(例如
Figure BDA0002949251400000111
或
Figure BDA0002949251400000112
平板计算机)、电子书、导航装置、汽车信息娱乐系统、自动驾驶车辆控制系统等。电子系统603包含至少一个存储器装置605。所述至少一个存储器装置605可包含例如根据本公开的实施例的金属柱结构。
电子系统603可另外包含至少一个电子信号处理器装置607(通常被称为“微处理器”)。电子信号处理器装置607可包含根据本公开的实施例的金属柱结构。电子系统603可另外包含用于供用户将信息输入到电子系统603中的一或多个输入装置609，例如鼠标或其它指标装置、键盘、触摸板、按钮或控制面板。电子系统603可另外包含用于将信息(例如，视觉或音频输出)输出到用户的一或多个输出装置611，例如监视器、显示器、打印机、音频输出插孔、扬声器等。在一些实施例中，输入装置609和输出装置611可包括可用于将信息输入到电子系统603以及将视觉信息输出到用户两者的单一触摸屏装置。输入装置609和输出装置611可与存储器装置605和电子信号处理器装置607中的一或多个电通信。上述装置中的至少一些可使用根据本公开的实施例的金属柱结构安装到一或多个衬底，例如内插件、主板或其它电路板。
在实施例中，一种微电子组件包括衬底，其表面上具有至少一个接合衬垫；和金属柱结构，其处于所述至少一个接合衬垫上。所述金属柱结构包括：金属柱，其处于所述至少一个接合衬垫上；和焊接材料，其有一部分处于所述金属柱内的储集层内且另一部分从所述金属柱的与所述至少一个接合衬垫相对的末端突出。
在实施例中，一种工艺包括清洁微电子组件的上面具有接合衬垫的表面并且将晶种材料沉积于所述表面上；施加并图案化第一光致抗蚀剂材料以暴露所述接合衬垫上的晶种材料并且将焊接材料立柱电镀到所述暴露的晶种材料上并移除所述第一光致抗蚀剂材料。施加并图案化第二光致抗蚀剂材料以使环绕所述焊料立柱的晶种材料区域暴露；在所述接合衬垫上电镀镍管达大约所述焊料立柱的高度并且移除所述第二光致抗蚀剂材料。施加并图案化第三光致抗蚀剂材料以使环绕所述镍管的所述接合衬垫上的晶种材料区域暴露；在所述接合衬垫上电镀铜套管达大约所述镍管的高度并且移除所述第三光致抗蚀剂材料。施加并图案化第四光致抗蚀剂材料以使所述镍管和铜套管的上部末端暴露；在所述镍管和铜套管的所述上部末端上方电镀镍套环并且移除所述第四光致抗蚀剂材料。施加并图案化第五光致抗蚀剂材料以使所述焊料立柱和所述镍套环的顶部暴露；将焊接材料头电镀到所述焊料立柱和所述镍套环上以形成金属柱结构；并且清洁所述金属柱结构和周围表面。
在实施例中，一种工艺包括清洁微电子组件的上面具有接合衬垫的表面并且将晶种材料沉积于所述表面上；施加并图案化第一光致抗蚀剂材料以暴露所述接合衬垫上的晶种材料；将焊接材料立柱电镀到所述暴露的晶种材料上并且移除所述第一光致抗蚀剂材料。施加并图案化第二光致抗蚀剂材料以使环绕所述焊料立柱的晶种材料区域暴露；在所述接合衬垫上电镀镍管达大约所述焊料立柱的高度并且移除所述第二光致抗蚀剂材料。施加并图案化第三光致抗蚀剂材料以使所述焊料立柱的顶部和所述镍管的上部末端暴露；将焊接材料头电镀到所述焊料立柱和所述镍管的上部末端上以形成金属柱结构；和清洁所述金属柱结构和周围表面。
在实施例中，一种微电子组件组合件包括第一微电子组件；第二微电子组件，其至少部分地叠置在所述第一微电子组件上；和金属柱结构，其在所述第一微电子组件和所述第二微电子组件之间延伸。所述金属柱结构包括所述第一微电子组件的接合衬垫上的管状金属柱和焊接材料，每一金属柱结构的所述焊接材料的一部分位于所述管状金属柱的内部提供的储集层内且所述焊接材料的另一部分从所述管状金属柱的末端突出并且固定到所述第二微电子组件的端子结构。
在实施例中，一种用于微电子组件的金属柱结构，其包括：金属管，其固定到接合衬垫；和焊接材料，其处于所述金属管内并且从所述金属管的与所述接合衬垫相对的末端延伸。
在实施例中，一种结合微电子组件的导电结构的方法包括：将第一微电子组件放置于第二微电子组件上方；使从所述第一微电子组件突出的金属柱结构与所述第二微电子组件的端子结构对齐；和将所述第一和第二微电子组件加热到高于处于所述金属柱结构的金属柱内并且从所述金属柱突出的焊接材料的熔点的温度以致使从所述金属柱突出的熔融焊接材料芯吸到所述端子结构并且从所述金属柱内拉吸熔融焊接材料。将所述第一和第二微电子组件的温度降低到低于所述焊接材料的所述熔点以固化所述焊接材料从而接合到所述金属柱的内表面并且接合到所述端子结构。
在实施例中，一种电子系统包括一或多个输入装置；一或多个输出装置；一或多个微处理器装置；和一或多个存储器装置；所述输入装置、输出装置、微处理器装置和存储器装置中的至少一个配置为微电子组件。所述输入装置、输出装置、微处理器装置和存储器装置中的至少一个配置有衬底，其中至少一个微电子组件包括通到另一微电子组件或通到衬底的电连接，所述电连接配置为具有焊接材料的管状金属柱，所述焊接材料接合到所述管状金属柱的内部，从所述内部延伸并且接合到所述另一微电子组件或所述衬底。
另外的非限制性实施例包含：
实施例1.一种微电子组件，其包括：
衬底，其表面上具有至少一个接合衬垫；和
金属柱结构，其处于所述至少一个接合衬垫上，所述金属柱结构包括：
属柱，其处于所述至少一个接合衬垫上；和
焊接材料，其有一部分处于所述金属柱内的储集层内且另一部分从所述金属柱的与所述至少一个接合衬垫相对的末端突出。
实施例2.根据实施例1所述的微电子组件，其中所述焊接材料的所述另一部分在与所述至少一个接合衬垫相对的末端于所述金属柱的壁上方横向延伸。
实施例3.根据实施例1或2所述的微电子组件，其中所述金属柱包括第一金属材料套管和所述套管内的第二不同金属材料管并且包含在所述金属套管的末端上方向外横向延伸的一体式套环。
实施例4.根据实施例3所述的微电子组件，其中所述第一金属材料包括铜或金，且所述第二金属材料包括镍、钨、钯、铂、金或包含钴、锌、铜或铁的镍合金。
实施例5.根据实施例1到4中任一实施例所述的微电子组件，其中所述金属柱包括单一金属材料管。
实施例6.根据实施例5所述的微电子组件，其中所述单一金属材料包括铜或金。
实施例7.一种工艺，其包括：
清洁微电子组件的上面具有接合衬垫的表面并且将晶种材料沉积于所述表面上；
施加并图案化第一光致抗蚀剂材料以暴露所述接合衬垫上的晶种材料；
将焊接材料立柱电镀到所述暴露的晶种材料上并且移除所述第一光致抗蚀剂材料；
施加并图案化第二光致抗蚀剂材料以使环绕所述焊料立柱的晶种材料区域暴露；
在所述接合衬垫上电镀镍管达大约所述焊料立柱的高度并且移除所述第二光致抗蚀剂材料；
施加并图案化第三光致抗蚀剂材料以使环绕所述镍管的所述接合衬垫上的晶种材料区域暴露；
在所述接合衬垫上电镀铜套管达大约所述镍管的高度并且移除所述第三光致抗蚀剂材料；
施加并图案化第四光致抗蚀剂材料以使所述镍管和铜套管的上部末端暴露；
在所述镍管和铜套管的所述上部末端上方电镀镍套环并且移除所述第四光致抗蚀剂材料；
施加并图案化第五光致抗蚀剂材料以使所述焊料立柱和所述镍套环的顶部暴露；
将焊接材料头电镀到所述焊料立柱和所述镍套环上以形成金属柱结构；和
清洁所述金属柱结构和周围表面。
实施例8.一种工艺，其包括：
清洁微电子组件的上面具有接合衬垫的表面并且将晶种材料沉积于所述表面上；
施加并图案化第一光致抗蚀剂材料以暴露所述接合衬垫上的晶种材料；
将焊接材料立柱电镀到所述暴露的晶种材料上并且移除所述第一光致抗蚀剂材料；
施加并图案化第二光致抗蚀剂材料以使环绕所述焊料立柱的晶种材料区域暴露；
在所述接合衬垫上电镀镍管达大约所述焊料立柱的高度并且移除所述第二光致抗蚀剂材料；
施加并图案化第三光致抗蚀剂材料以使所述焊料立柱的顶部和所述镍管的上部末端暴露；
将焊接材料头电镀到所述焊料立柱和所述镍管的上部末端上以形成金属柱结构；和
清洁所述金属柱结构和周围表面。
实施例9.一种微电子组件组合件，其包括：
第一微电子组件；
第二微电子组件，其至少部分地叠置在所述第一微电子组件上；和
金属柱结构，其在所述第一微电子组件和所述第二微电子组件之间延伸，所述金属柱结构包括所述第一微电子组件的接合衬垫上的管状金属柱和焊接材料，每一金属柱结构的所述焊接材料的一部分位于所述管状金属柱的内部提供的储集层内且所述焊接材料的另一部分从所述管状金属柱的末端突出并且固定到所述第二微电子组件的端子结构。
实施例10.根据实施例9所述的微电子组件组合件，其中所述储集层的处于所述焊接材料的位于所述储集层内的所述部分与所述接合衬垫之间的部分包括一或多个空隙。
实施例11.一种用于微电子组件的金属柱结构，其包括：
金属管，其固定到接合衬垫；和
焊接材料，其处于所述金属管内并且从所述金属管的与所述接合衬垫相对的末端延伸。
实施例12.根据实施例11所述的金属柱结构，其中从所述金属管的与所述接合衬垫相对的所述末端延伸的所述焊接材料在所述管的壁上方延伸。
实施例13.根据实施例11或12所述的金属柱结构，其中所述金属管环绕金属套管且所述金属管另外包括在所述金属套管的末端上方延伸的套环。
实施例14.根据实施例13所述的金属柱结构，其中填充所述金属管并且从所述金属管的与所述接合衬垫相对的末端延伸的所述焊接材料在所述套环上方延伸。
实施例15.根据实施例13或14所述的金属柱结构，其中所述金属管包括镍、钨、钯、铂、金或具有钴、锌、铜或铁的镍合金，且所述金属套管包括铜或金。
实施例16.根据实施例13或14所述的金属柱结构，其中所述金属管包括镍且所述金属套管包括铜。
实施例17.一种结合微电子组件的导电结构的方法，其包括：
将第一微电子组件放置于第二微电子组件上方；
使从所述第一微电子组件突出的金属柱结构与所述第二微电子组件的端子结构对齐；
将所述第一和第二微电子组件加热到高于处于所述金属柱结构的金属柱内并且从所述金属柱突出的焊接材料的熔点的温度以致使从所述金属柱突出的熔融焊接材料芯吸到所述端子结构并且从所述金属柱内拉吸熔融焊接材料；和
将所述第一和第二微电子组件的温度降低到低于所述焊接材料的所述熔点以固化所述焊接材料从而接合到所述金属柱的内表面并且接合到所述端子结构。
实施例18.一种电子系统，其包括：
一或多个输入装置；
一或多个输出装置；
一或多个微处理器装置；和
一或多个存储器装置；
所述输入装置、输出装置、微处理器装置和存储器装置中的至少一个配置为微电子组件；
所述输入装置、输出装置、微处理器装置和存储器装置中的至少一个配置有衬底；且
其中至少一个微电子组件包括通到另一微电子组件或通到衬底的电连接，所述电连接配置为具有焊接材料的管状金属柱，所述焊接材料接合到所述管状金属柱的内部，从所述内部延伸并且接合到所述另一微电子组件或所述衬底。
虽然已结合图式描述了某些说明性实施例，但所属领域的一般技术人员将认识到且理解，本公开所涵盖的实施例不限于在本文中明确地展示且描述的那些实施例。确切地说，可在不脱离本公开所涵盖的实施例(如本文中所主张的那些实施例，包含合法等效物)的范围的情况下，对本文中所描述的实施例做出多种添加、删除和修改。另外，一个公开实施例的特征可与另一公开实施例的特征组合，而仍然涵盖在本公开的范围内。

Claims (18)

1.一种微电子组件，其包括：
衬底，其表面上具有至少一个接合衬垫；和
金属柱结构，其处于所述至少一个接合衬垫上，所述金属柱结构包括：
金属柱，其处于所述至少一个接合衬垫上；和
焊接材料，其有一部分处于所述金属柱内的储集层内且另一部分从所述金属柱的与所述至少一个接合衬垫相对的末端突出。
2.根据权利要求1所述的微电子组件，其中所述焊接材料的所述另一部分在与所述至少一个接合衬垫相对的末端于所述金属柱的壁上方横向延伸。
3.根据权利要求1所述的微电子组件，其中所述金属柱包括第一金属材料套管和所述套管内的第二不同金属材料管并且包含在所述金属套管的末端上方向外横向延伸的一体式套环。
4.根据权利要求3所述的微电子组件，其中所述第一金属材料包括铜或金，且所述第二金属材料包括镍、钨、钯、铂、金或包含钴、锌、铜或铁的镍合金。
5.根据权利要求1所述的微电子组件，其中所述金属柱包括单一金属材料管。
6.根据权利要求5所述的微电子组件，其中所述单一金属材料包括铜或金。
7.一种工艺，其包括：
清洁微电子组件的上面具有接合衬垫的表面并且将晶种材料沉积于所述表面上；
施加并图案化第一光致抗蚀剂材料以暴露所述接合衬垫上的晶种材料；
将焊接材料立柱电镀到所述暴露的晶种材料上并且移除所述第一光致抗蚀剂材料；
施加并图案化第二光致抗蚀剂材料以使环绕所述焊料立柱的晶种材料区域暴露；在所述接合衬垫上电镀镍管达大约所述焊料立柱的高度并且移除所述第二光致抗蚀剂材料；
施加并图案化第三光致抗蚀剂材料以使环绕所述镍管的所述接合衬垫上的晶种材料区域暴露；
在所述接合衬垫上电镀铜套管达大约所述镍管的高度并且移除所述第三光致抗蚀剂材料；
施加并图案化第四光致抗蚀剂材料以使所述镍管和铜套管的上部末端暴露；
在所述镍管和铜套管的所述上部末端上方电镀镍套环并且移除所述第四光致抗蚀剂材料；
施加并图案化第五光致抗蚀剂材料以使所述焊料立柱和所述镍套环的顶部暴露；
将焊接材料头电镀到所述焊料立柱和所述镍套环上以形成金属柱结构；和
清洁所述金属柱结构和周围表面。
8.一种工艺，其包括：
清洁微电子组件的上面具有接合衬垫的表面并且将晶种材料沉积于所述表面上；
施加并图案化第一光致抗蚀剂材料以暴露所述接合衬垫上的晶种材料；
将焊接材料立柱电镀到所述暴露的晶种材料上并且移除所述第一光致抗蚀剂材料；
施加并图案化第二光致抗蚀剂材料以使环绕所述焊料立柱的晶种材料区域暴露；在所述接合衬垫上电镀镍管达大约所述焊料立柱的高度并且移除所述第二光致抗蚀剂材料；
施加并图案化第三光致抗蚀剂材料以使所述焊料立柱的顶部和所述镍管的上部末端暴露；
将焊接材料头电镀到所述焊料立柱和所述镍管的上部末端上以形成金属柱结构；和
清洁所述金属柱结构和周围表面。
9.一种微电子组件组合件，其包括：
第一微电子组件；
第二微电子组件，其至少部分地叠置在所述第一微电子组件上；和
金属柱结构，其在所述第一微电子组件和所述第二微电子组件之间延伸，所述金属柱结构包括所述第一微电子组件的接合衬垫上的管状金属柱和焊接材料，每一金属柱结构的所述焊接材料的一部分位于所述管状金属柱的内部提供的储集层内且所述焊接材料的另一部分从所述管状金属柱的末端突出并且固定到所述第二微电子组件的端子结构。
10.根据权利要求9所述的微电子组件组合件，其中所述储集层的处于所述焊接材料的位于所述储集层内的所述部分与所述接合衬垫之间的部分包括一或多个空隙。
11.一种用于微电子组件的金属柱结构，其包括：
金属管，其固定到接合衬垫；和
焊接材料，其处于所述金属管内并且从所述金属管的与所述接合衬垫相对的末端延伸。
12.根据权利要求11所述的金属柱结构，其中从所述金属管的与所述接合衬垫相对的所述末端延伸的所述焊接材料在所述管的壁上方延伸。
13.根据权利要求11所述的金属柱结构，其中所述金属管环绕金属套管且所述金属管另外包括在所述金属套管的末端上方延伸的套环。
14.根据权利要求13所述的金属柱结构，其中填充所述金属管并且从所述金属管的与所述接合衬垫相对的末端延伸的所述焊接材料在所述套环上方延伸。
15.根据权利要求13所述的金属柱结构，其中所述金属管包括镍、钨、钯、铂、金或具有钴、锌、铜或铁的镍合金，且所述金属套管包括铜或金。
16.根据权利要求13所述的金属柱结构，其中所述金属管包括镍且所述金属套管包括铜。
17.一种结合微电子组件的导电结构的方法，其包括：
将第一微电子组件放置于第二微电子组件上方；
使从所述第一微电子组件突出的金属柱结构与所述第二微电子组件的端子结构对齐；
将所述第一和第二微电子组件加热到高于处于所述金属柱结构的金属柱内并且从所述金属柱突出的焊接材料的熔点的温度以致使从所述金属柱突出的熔融焊接材料芯吸到所述端子结构并且从所述金属柱内拉吸熔融焊接材料；和
将所述第一和第二微电子组件的温度降低到低于所述焊接材料的所述熔点以固化所述焊接材料从而接合到所述金属柱的内表面并且接合到所述端子结构。
18.一种电子系统，其包括：
一或多个输入装置；
一或多个输出装置；
一或多个微处理器装置；和
一或多个存储器装置；
所述输入装置、输出装置、微处理器装置和存储器装置中的至少一个配置为微电子组件；
所述输入装置、输出装置、微处理器装置和存储器装置中的至少一个配置有衬底；且
其中至少一个微电子组件包括通到另一微电子组件或通到衬底的电连接，所述电连接配置为具有焊接材料的管状金属柱，所述焊接材料接合到所述管状金属柱的内部，从所述内部延伸并且接合到所述另一微电子组件或所述衬底。
CN202110204327.0A 2020-02-28 2021-02-23 用于微电子组件的导电元件以及相关方法、组合件和电子系统 Pending CN113327908A (zh)

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