CN113300731A

CN113300731A - S-band antenna array surface piece based on chip type assembly

Info

Publication number: CN113300731A
Application number: CN202110589673.5A
Authority: CN
Inventors: 曾玲玲; 王漕; 祝忠明
Original assignee: Chengdu Univeristy of Technology
Current assignee: Chengdu Univeristy of Technology
Priority date: 2021-05-28
Filing date: 2021-05-28
Publication date: 2021-08-24

Abstract

The invention provides an S-band antenna array element based on a chip component, which mainly includes a radio frequency front end, a primary power supply and a comprehensive board. The RF front-end includes power amplifiers, circulators, limiting low-noise amplifiers, and frequency conversion modules. The comprehensive board includes secondary power supply, control protection, power supply modulation, etc. 16 channels per sample, 4x4 layout, unit digitization. The invention uses miniaturized vertical interconnection technology and miniaturized cooling technology to design an anti-vibration and impact system with less coupling vibration, no resonance amplification, and good buffering effect in a small deformation space.

Description

S-band antenna array surface piece based on chip type assembly

Technical Field

The invention provides an S-band antenna array surface piece based on a sheet type assembly, and particularly relates to an antenna array surface piece.

Background

Communication electronic equipment is developed towards miniaturization and miniaturization, and in the development of aircrafts which move at high speed, such as early warning airplanes and missiles, in order to achieve low air resistance, smaller load and improve the effect of resisting the natural world, an antenna and a carrier surface are required to be conformal, low in weight and good in mechanical stability.

Not only is there significant theoretical research value in developing miniaturized designs for antennas, but there is also a large commercial space for the design of an antenna front-end with the ideal result of minimizing any parameter that degrades the performance of the antenna front-end. This is also a leading and hot topic in modern communications.

Disclosure of Invention

The transceiver unit comprises a power amplifier, an amplitude limiting low-noise amplifier, a circulator, an energy storage capacitor and a liquid cooling structure, and is divided into two parts, namely a radio frequency part requiring air sealing and an energy storage capacitor part not requiring air sealing but occupying a large space.

As one improvement of the scheme, the transceiver unit (radio frequency layer) adopts a liquid-cooled double-sided cavity and local air sealing structure, and the design size is 170mm multiplied by 15 mm; the transceiver unit (capacitor layer) adopts a double-panel non-sealing structure, and the design size is 170mm multiplied by 18 mm; the design effect of the chip component transceiver unit is shown in fig. 5 and 6, respectively.

As one improvement of the scheme, the transceiver unit (radio frequency layer) adopts a double-sided cavity structure, the shell facing the antenna layer is used for arranging amplitude limiting low-noise amplifier, the shell facing the antenna surface is used for arranging circuits such as a power amplifier, a circulator and the like, in order to improve the assembly design convenience of the assembly and improve the modularization degree of the system, the power amplifier and the amplitude limiting low-noise amplifier function circuit at the position are both designed in a support plate type, and because the heat consumption of the power amplifier at the position is larger, in order to reduce the junction temperature of a power amplifier chip, a refrigerant flow channel for unit cooling is designed in an interlayer in the inner part of the double-sided cavity.

The frequency conversion unit comprises an up/down converter, a filter, a local oscillator circuit and the like, the frequency conversion unit adopts a double-sided cavity non-airtight structure, and the size of a shell of the frequency conversion unit is 170mm multiplied by 12mm according to the circuit characteristics.

As one improvement of the scheme, the frequency conversion unit adopts a double-sided cavity structure, the two sides are respectively used for arranging circuits such as an up-converter, a down-converter, a filter, a local oscillator and the like, the frequency conversion unit adopts full-page design, and the circuit installation can adopt an SMT process with extremely high automation degree. Since the heat consumption of each device is small, the cooling only considers the way of heat dissipation.

The integrated unit internally comprises functional circuits such as control, radio frequency conversion, a secondary power supply and the like, and the layer does not need to be hermetically sealed and has heat dissipation requirements, so that a single-face cavity non-airtight structure is adopted. According to the circuit characteristics, the size of the comprehensive unit shell is 170mm multiplied by 10 mm.

As one improvement of the scheme, the integrated unit internally comprises functional circuits such as control, radio frequency conversion, a secondary power supply and the like, the layer does not need to be hermetically sealed, the heat dissipation requirement is met, a single-face cavity non-airtight structure is adopted, and according to the circuit characteristics, the size of the shell of the integrated unit is 170mm multiplied by 10 mm.

The power supply unit internally comprises a primary power supply functional circuit and a refrigerant flow channel structure, the layer does not need to be hermetically sealed, but has a heat dissipation requirement, so that a single-face cavity non-airtight structure with a built-in flow channel is adopted, and according to the circuit characteristics, the overall dimension of the power supply unit is 208mm multiplied by 180mm multiplied by 35mm (no splicing array overlapping dimension).

As one of the improvement of the scheme, the power supply unit adopts a single-sided cavity structure, namely all the electric functions of the functional unit are completed in the same-sided shell, in order to improve the convenience of assembly design of components and the modularization degree of a system, the circuit installation can adopt an SMT (surface mount technology) process with extremely high automation degree, and as the power supply module in the power supply unit has larger heat consumption, a liquid cooling flow channel is designed in the power supply shell at the position for heat dissipation of the power supply module.

Drawings

Fig. 1 is a schematic structural diagram of an S-band antenna array surface element based on a chip component according to the present invention.

FIG. 2 is a three-dimensional view of the TR assembly

Fig. 3 is a schematic diagram of a frequency conversion unit structure.

Fig. 4 is a schematic diagram of an integrated unit structure.

FIG. 5 is a schematic of the integrated unit heat flow direction.

Fig. 6 is a comprehensive schematic diagram of a power supply unit.

The power supply unit heat flow diagram of fig. 7.

Detailed Description

The invention will now be further described with reference to the accompanying drawings.

The utility model provides a S wave band antenna array face spare based on piece formula subassembly, its characterized in that includes receiving and dispatching unit (radio frequency layer), receiving and dispatching unit (electric capacity layer), frequency conversion unit, synthesizes unit, the electrical unit, receiving and dispatching unit (radio frequency layer) internal integration power amplifier, amplitude limiting low noise are put, circulator, liquid cooling structure, receiving and dispatching unit (electric capacity layer) is inside mainly to be the required energy storage electric capacity of power amplifier radio frequency, radio frequency circuits and control circuit such as frequency conversion unit internal integration up/down converter, wave filter, this layer adopt the non-airtight structure of two-sided chamber, synthesize functional circuits such as the internal integrated control of unit, radio frequency switching, secondary power, this layer adopts single face cavity structure, the internal integration primary power of electrical unit, cooling structure, this layer adopt single face chamber shell structure.

As an improvement of the above scheme, the transceiver unit (radio frequency layer) adopts a double-sided cavity structure, the shell facing the antenna layer is used for arranging amplitude limiting and low noise amplification, and the shell facing away from the antenna layer is used for arranging circuits such as a power amplifier, a circulator and the like. In order to improve the convenience of assembly design of the components and the modularization degree of the system, the power amplifier and the amplitude limiting low-noise amplifier function circuit are designed in a carrier plate mode. Because the heat consumption of the local power amplifier is larger, in order to reduce the junction temperature of the power amplifier chip, a coolant channel for cooling the unit is designed in the interlayer in the double-sided cavity.

The frequency conversion unit comprises an up/down converter, a filter, a local oscillator circuit and the like, and adopts a double-sided cavity non-airtight structure. According to the circuit characteristics, the shell size of the frequency conversion unit is 170mm multiplied by 12 mm.

As an improvement of the scheme, the frequency conversion unit adopts a double-sided cavity structure, and two sides of the frequency conversion unit are respectively used for arranging circuits such as an up-converter, a down-converter, a filter, a local oscillator and the like. The frequency conversion unit adopts the full-page design, the circuit installation can adopt the SMT process with extremely high automation degree, and because the heat consumption of each device is less, the cooling only considers the mode of heat dissipation.

As one improvement of the scheme, the integrated unit internally comprises functional circuits such as control, radio frequency conversion, a secondary power supply and the like, the integrated unit does not need to be hermetically sealed, has the heat dissipation requirement and adopts a non-airtight structure with a single-sided cavity. According to the circuit characteristics, the size of the comprehensive unit shell is 170mm multiplied by 10 mm.

The power supply unit internally comprises a primary power supply functional circuit and a refrigerant flow channel structure, and the layer does not need to be hermetically sealed, but has a heat dissipation requirement, so that a single-side cavity non-airtight structure with a built-in flow channel is adopted. According to circuit characteristics, the external dimension of the power supply unit is 208mm multiplied by 180mm multiplied by 35mm (the mosaic overlapping dimension is not included).

As one improvement of the scheme, the power supply unit adopts a single-face cavity structure, namely all the electric functions of the functional unit are completed in the same face shell. In order to improve the convenience of assembly design of the components and the modularization degree of a system, an SMT (surface mount technology) process with extremely high automation degree can be adopted for circuit installation. Because the power module has larger heat consumption in the power unit, a liquid cooling flow passage is designed in the power shell at the position and used for heat dissipation of the power module.

Finally, it should be noted that the above embodiments are only used for expressing the technical requirements of the invention and not limiting the requirements, the invention is designed in detail, and the same professions should understand the meaning, and the modification without departing the basic requirements, is covered by the protection scope of the invention.

Claims

1. An S-band antenna array element based on a chip component, characterized in that it comprises a transceiver unit (radio frequency layer), a transceiver unit (capacitance layer), a frequency conversion unit, an integrated unit, a power supply unit, and the transceiver unit (radio frequency layer) ) internal integrated power amplifier, limiting low noise amplifier, circulator, liquid cooling structure, the inside of the transceiver unit (capacitor layer) is mainly the energy storage capacitor required by the power amplifier radio frequency, the frequency conversion unit integrates up/down converter, Filters and other radio frequency circuits and control circuits. This layer adopts a double-sided cavity non-airtight structure. The integrated unit integrates functional circuits such as control, radio frequency switching, and secondary power supply. This layer adopts a single-sided cavity structure. The power supply The unit integrates a primary power supply and cooling structure, and this layer adopts a single-sided cavity shell structure.

2. the S-band antenna array element based on the chip component as claimed in claim 1, because the intermediate frequency frequency is low, the radio frequency bandwidth is wide, part of the local oscillator frequency is in the radio frequency band, and the radio frequency has three frequency points The instantaneous bandwidth is 300MHz, We divide the radio frequency into three sections, overlapping 75MHz, and select a certain radio frequency filter to conduct through the switch according to the actual radio frequency operating frequency.

3. The S-band antenna element based on chip components as claimed in claim 1, because the ADC input power is at most 10dBm, and the channel gain is relatively high, if the RF input power is too high, the RF signal will be attenuated by STC to avoid Post-stage saturation.

4. The S-band antenna array element based on the chip component as claimed in claim 1, because the small structure and the rigid structure generally have higher strength and natural frequency, when the natural frequency is higher, the amplitude of the component is also smaller, Therefore, the stress during vibration is also small, and its anti-vibration and impact force is strong. Therefore, in the design of components, we mostly adopt miniaturized design to enhance its anti-vibration and anti-shock performance.

5. the S-band antenna array element based on chip assembly as claimed in claim 1, this chip radio frequency front-end mainly comprises three parts: TR assembly, frequency conversion assembly and power module, and reserved the position of digital board, In order to achieve the purpose of being thin and light, the overall tile design is adopted, which increases the design difficulty of the RF front-end.

6. The S-band antenna array element based on the chip component as claimed in claim 1, the TR component is the core part of the radio frequency front end, and realizes the amplitude limiting of the antenna received signal, low noise amplification, the filtering of the transmitted signal and power amplification, power supply. Modulation and transceiver switching, the key parameters of components are power, efficiency, noise and heat dissipation.

7. The S-band antenna array element based on the chip component as claimed in claim 1, the total energy storage capacitor capacitance value of 16 channels is 5555uF×16=88880uF, the selected capacitor is a multilayer ceramic capacitor, and a single capacitor The capacity is 220uF, the withstand voltage is 50V, the volume is 11.1mm×12.5mm×5.8mm, the energy storage capacitor is placed on the top of the power amplifier, and a separate layer is designed. part of the storage capacitor.

8. The S-band antenna array element based on the chip component as claimed in claim 1, the frequency conversion component realizes up-conversion, filtering, amplification and power division amplification of the local oscillator signal, because the radio frequency and the intermediate frequency frequency gap is not large, using a In the way of frequency conversion, the key parameters of the components are the amplitude and phase consistency under spurious suppression and attenuation.

9. The S-band antenna front element based on chip components as claimed in claim 1, the power module converts the 710V input voltage into the voltage required by each component within a limited volume, and the key parameters are efficiency, ripple, voltage stability and heat dissipation.

10. The S-band antenna front element based on the chip component as claimed in claim 1, the TR realizes power amplification of transmission, limit amplification of reception and switching of transmission and reception, and the signal power is strong during transmission, and leakage to the received signal will cause The low-noise amplifier was burnt out. In order to protect the low-noise amplifier, a limiter was placed in the front stage.