CN113300589A - Filtering, surge and power supply integrated module - Google Patents
Filtering, surge and power supply integrated module Download PDFInfo
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- CN113300589A CN113300589A CN202110596741.0A CN202110596741A CN113300589A CN 113300589 A CN113300589 A CN 113300589A CN 202110596741 A CN202110596741 A CN 202110596741A CN 113300589 A CN113300589 A CN 113300589A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/38—Cooling arrangements using the Peltier effect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0652—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/14—Arrangements for reducing ripples from dc input or output
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Power Conversion In General (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The invention belongs to the technical field of power supply conversion, and relates to a novel filtering, surge and power supply integrated module; the integrated module internally comprises an anti-reverse connection circuit, a lightning protection circuit, a filter circuit, a slow start circuit, a surge suppression circuit, a power failure protection circuit and a power conversion circuit; power MOS tubes of the anti-reverse-connection circuit are all arranged on the bottom layer, key signals are processed by a pure gold cross-linking process, and the parasitic inductance of the circuit is below 0.5 nH; the lightning protection circuit is arranged on the bottom layer, and the unprocessed electric signals enter the circuit to be processed; the anti-reverse connection circuit, the lightning protection circuit, the surge suppression circuit, the power failure protection circuit and the power conversion circuit are integrated on one chip by adopting semiconductor packaging technologies such as a 3D chip stacking technology, an embedded multimode interconnection bridge and the like, and due to the high integration level, the high-frequency working can be realized, the volumes of a magnetic device and a capacitor are reduced, and the cross-linking of the internal chip, the magnetic device and the capacitor can be realized through a thick film or PCB process.
Description
Technical Field
The invention belongs to the technical field of power supply conversion, relates to a secondary power supply conversion technology of military finished products and airworthiness products, and particularly relates to a novel filtering, surge and power supply integrated module.
Background
At present, series requirements of GJB-181/GJB-181A/GJB-181B airplane power supply characteristic, series requirements of GJB-151A, GJB-151B military equipment and subsystem electromagnetic emission and sensitivity requirements and measurements, and series requirements of RTCA DO-160 airborne equipment environmental conditions and test regulations are gradually improved, electromagnetic compatibility and power supply characteristic design are required to be carried out on airborne finished product power supply input ends, and the aircraft is large, complex in system and high in failure rate.
The front end of a common aviation airborne product passes through an anti-reverse connection circuit, a filter, a lightning protection circuit, a slow start circuit, a surge suppression circuit, a power failure protection circuit, a power conversion circuit and the like. The circuit is integrated on a circuit board or integrated with other input communication signals, hidden dangers are easy to occur in the production and use processes in consideration of the dispersion, the consistency is difficult to guarantee, and the circuit is large in size, heavy in weight and poor in heat dissipation.
The front end of the power supply of the same type of aviation airborne product is limited by the design of different people, so that the design differentiation is caused, the time and labor are wasted in the experiment rectification, the standard module and the complete set of design requirements are not formed, the integration level of a semiconductor device is higher and higher, and the 3D chip stacking technology, the embedded multimode interconnection bridge and other semiconductor packaging technologies are promoted and popularized. The original product design mode is changed, the product reliability is further improved along with the technical progress, and the reduction of the volume and the weight is the central importance of the future development.
Disclosure of Invention
The purpose of the invention is: the standardized filtering, surge and power supply integrated module is provided to solve the problems that various circuits are integrated on a circuit board or are integrated with other input communication signals, consistency is difficult to guarantee due to dispersity, the size is large, the weight is heavy, and heat dissipation performance is poor.
In order to solve the technical problem, the technical scheme of the invention is as follows: .
A filtering, surge and power supply integrated module is characterized in that an anti-reverse connection circuit, a filtering circuit, a lightning protection circuit, a slow start circuit, a surge suppression circuit, a power failure protection circuit and a power supply conversion circuit are sequentially designed inside the integrated module;
the anti-reverse connection circuit, the filter circuit, the slow start circuit, the surge suppression circuit, the power failure protection circuit and the power conversion circuit are fixed on a plane through a plane substrate and connected through an embedded multimode interconnection bridge;
the anti-reverse connection circuit and the lightning protection circuit adopt a 3D stacking technology to ensure that front-end surge and peak voltage cannot be transmitted to the rear end;
the power MOS tubes of the anti-reverse connection circuit are all arranged on the bottom layer, the line distance from the control signal to the MOS tubes is controlled to be 0.1mm by utilizing the stacking space advantage, and the drive-stage control signal is processed by a bonding and crosslinking process between different chips by adopting pure gold wires, so that the parasitic inductance of the line is below 0.5 nH;
the lightning protection circuit is arranged on the bottom layer, so that an unprocessed electric signal enters the circuit to be processed, and picosecond-level reaction processing is realized;
the surge suppression circuit and the power conversion circuit are both provided with power MOS tubes, so that power devices are on the bottom layer, the line distance from a driving and control signal to the MOS tubes is reduced to be within 0.1mm by utilizing the advantage of stacking space, the driving and control signal is processed by adopting a bonding and crosslinking process between different chips by adopting pure gold wires, the parasitic inductance of the line is below 0.5nH, and the parasitic resistance is below 1n omega;
the anti-reverse connection circuit, the lightning protection circuit and the filter circuit adopt a one-way metal bonding mode, and crosstalk cannot interfere to a post-stage circuit through other media through spatial physical isolation; the filter circuit, the surge suppression circuit, the power failure protection circuit and the power conversion circuit also adopt a metal bonding process, and the crosstalk problem is avoided through spatial physical isolation;
the power conversion circuit is a switch circuit and comprises a transformer and a plurality of inductors, so that the transformer and the inductors are required to be arranged in a circuit area, good heat dissipation is ensured, meanwhile, the transformer and the inductors adopt a gold wire process and metal bonding, sufficient flow rate is ensured, and parasitic capacitance is ensured to be below 3 nF;
the power conversion circuit is a switching circuit, the switching frequency can work above 5MHz, therefore, the distance of a processing line of a key signal is controlled to be 0.1mm by adopting a pure gold cross-linking process, so that the parasitic inductance of the line between a driving signal and an MOS (metal oxide semiconductor) tube is below 0.5nH, the parasitic resistance is below 1n omega, and the parasitic capacitance is below 0.5 nF;
the distance between the whole substrate and the shell pins is controlled to be 0.5mm by adopting a metal bonding process, parasitic parameters are reduced, and the inside of the encapsulated inert gas is sealed and welded in parallel, so that the reliability is ensured;
the integrated module size is 37 x 29 x 8.5mm to address the power supply requirements in the 15-25W power range commonly used on the market. The input working voltage range is 9-50V, and the output voltage is +5V and +/-15V multi-path voltage.
The invention has the beneficial effects that: the invention adopts the semiconductor packaging technology to convert the original complex system into a professional customized module with a specific scene,
and forming a standard module and a set of design requirements, and designing according to the sequence of a standard anti-reverse connection circuit, a filter, a lightning protection circuit, a slow start, a surge suppression circuit, a power failure protection circuit and a power conversion circuit.
The product consistency, the electromagnetic compatibility, the power supply characteristic, the reliability and the service life are improved, the volumes of magnetic devices and capacitors in the module are reduced, and the output ripple wave fluctuation is smaller. And finally, the product has smaller volume, lighter weight and longer service life.
The anti-reverse-connection circuit, the lightning protection circuit, the surge suppression circuit, the power-down protection circuit and the power switching circuit are integrated on one chip by adopting a 3D chip stacking technology, an embedded multimode interconnection bridge and other semiconductor packaging technologies, higher-frequency work (MHZ and GHZ) can be realized due to high integration level, the volumes of a magnetic device and a capacitor are reduced, and the cross-linking of an internal chip, the magnetic device and the capacitor can be realized through a thick film or PCB process.
1. Aiming at the requirement of being fixed relative to the airplane power supply, the complex system design can be integrated into a certain standard volume by refining the requirement and using the semiconductor packaging technologies such as the 3D chip stacking technology, the embedded multimode interconnection bridge and the like.
2. By adopting a semiconductor packaging technology, discrete parameters on a PCB are eliminated, parasitic inductance and capacitance are reduced by 1-2 orders of magnitude, the conventional switching power supply can work at higher frequencies (MHZ and GHZ), the volumes of magnetic devices and capacitors in the switching power supply are reduced, and output ripple wave fluctuation is smaller.
3. Aiming at the power supply requirement in the power range of 15-25W commonly used in the market, the input requirements of electromagnetic compatibility, power supply characteristics, lightning stroke and the like can be integrated in the range of 37 x 29 x 8.5mm, the power supply can work in the input voltage range of 9-50V, and multi-path voltages of +5V, +/-15V and the like are output.
4. By adopting the method, the physical space enables the product to be internally and independently divided into the cavities, the electromagnetic compatibility characteristic is superior, the quality characteristic of the product is improved due to the adoption of the standard line unified packaging, the internal heat dissipation condition of the product by utilizing the Peltier effect is better than that of the product during separation, and the service life of the product is longer.
5. The 3D stacking key signals are processed by a pure gold cross-linking process, so that parasitic parameters are reduced; the transformer or the inductor adopts a gold thread process, so that the flux is ensured, and parasitic parameters are reduced.
Drawings
In order to more clearly illustrate the technical solution of the present invention, the drawings used in the embodiment of the present invention will be briefly explained. It is obvious that the drawings described below are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be obtained from these drawings without inventive effort.
FIG. 1 is a schematic circuit diagram of the present invention;
FIG. 2 is a schematic diagram of a 3D chip stacking technique of the present invention;
FIG. 3 is a schematic diagram of an embedded multimode interconnect bridge of the present invention;
FIG. 4 is a schematic diagram of a circuit integration scheme and sequence of the present invention; wherein (a) is a schematic side view, (b) is a schematic bottom cross-sectional view, and (c) is a schematic middle passive device layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Features of various aspects of embodiments of the invention will be described in detail below. In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without these specific details. The following description of the embodiments is merely intended to better understand the present invention by illustrating examples thereof. The present invention is not limited to any particular arrangement or method provided below, but rather covers all product structures, any modifications, alterations, etc. of the method covered without departing from the spirit of the invention.
In the drawings and the following description, well-known structures and techniques are not shown to avoid unnecessarily obscuring the present invention.
The circuit schematic diagram of the invention is shown in fig. 1, and the integrated module aims at the power supply requirement in the power range of 15-25W commonly used in the market, the input working voltage range is 9-50V, and the output voltage is +5V and +/-15V multi-path voltage.
The filtering, surge and power supply integrated module comprises an anti-reverse connection circuit, a lightning protection circuit, a filter circuit, a slow start, a surge suppression circuit, a power failure protection circuit and a power supply conversion circuit, wherein power devices are arranged in the filtering, surge and power supply integrated module and need to dissipate heat, the layout of the power devices is reasonably distributed, MOS (metal oxide semiconductor) tubes, transformers and inductors of the heat dissipation devices are placed at a substrate to dissipate heat, and a control chip and a capacitor which cannot be placed at the substrate due to control reasons are arranged.
The Peltier effect principle can be utilized, and a semiconductor PN node is arranged between the chip and the substrate, so that heat is absorbed to the substrate. The anti-reverse connection circuit, the lightning protection circuit, the surge suppression circuit, the power failure protection circuit and the power conversion circuit are integrated on one chip by adopting a 3D chip stacking technology, an embedded multimode interconnection bridge and other semiconductor packaging technologies, the principle of the 3D chip stacking technology is shown in figure 2, and the principle of the embedded multimode interconnection bridge is shown in figure 3;
FIG. 4 is a schematic diagram of the circuit integration method and sequence, the size of the integrated module is 37 × 29 × 8.5mm, the internal structure is divided into three layers,
the bottom layer is a heat dissipation power device MOS tube, a TVS (transient suppression diode), a transformer and an inductor, the line distance from a control signal to the MOS tube is controlled to be 0.1mm by utilizing the advantage of stacking space, and a drive level control signal is processed by bonding and crosslinking processes between different chips by adopting pure gold wires, so that the parasitic inductance of the line is below 0.5 nH;
the middle layer is a passive device layer with an anti-reverse connection circuit, a filter, a lightning protection circuit, a slow start circuit, a surge suppression circuit, a power failure protection circuit and a power conversion circuit in sequence, and an unprocessed electric signal enters the lightning protection circuit to be processed to realize picosecond-level reaction processing;
the surge suppression circuit and the power conversion circuit are both provided with power MOS tubes, so that power devices are on the bottom layer, the line distance from a driving and control signal to the MOS tubes is reduced to be within 0.1mm by utilizing the advantage of stacking space, the driving and control signal is processed by adopting a bonding and crosslinking process between different chips by adopting pure gold wires, the parasitic inductance of the line is below 0.5nH, and the parasitic resistance is below 1n omega;
the anti-reverse connection circuit, the lightning protection circuit and the filter circuit adopt a one-way metal bonding mode, and crosstalk cannot interfere to a post-stage circuit through other media through spatial physical isolation; the filter circuit, the surge suppression circuit, the power failure protection circuit and the power conversion circuit also adopt a metal bonding process, and the crosstalk problem is avoided through spatial physical isolation;
the power conversion circuit is a switch circuit and comprises a transformer and a plurality of inductors, so that the transformer and the inductors are required to be arranged in a circuit area, good heat dissipation is ensured, meanwhile, the transformer and the inductors adopt a gold wire process and metal bonding, sufficient flow rate is ensured, and parasitic capacitance is ensured to be below 3 nF; the switching frequency of the switching circuit can work above 5MHz, therefore, the distance of a processing line of a key signal by adopting a pure gold cross-linking process is controlled to be 0.1mm, so that the parasitic inductance of the line between a driving signal and an MOS (metal oxide semiconductor) tube is below 0.5nH, the parasitic resistance is below 1n omega, and the parasitic capacitance is below 0.5 nF;
the topmost layer is a basic calculation control chip.
The distance between the whole substrate and the shell pins is controlled to be 0.5mm by adopting a metal bonding process, parasitic parameters are reduced, and the inside of the encapsulated inert gas is sealed and welded in parallel, so that the reliability is ensured.
The integrated power supply module can meet the series requirements of GJB-181/GJB-181A/GJB-181B airplane power supply characteristic, GJB-151A, GJB-151B military equipment and subsystem electromagnetic emission and sensitivity requirements and measurement, and RTCA DO-160 airborne equipment environmental conditions and test regulations.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solutions of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive various equivalent modifications or substitutions within the technical scope of the present invention, and these modifications or substitutions should be covered within the scope of the present invention.
Claims (8)
1. A filtering, surge, power supply integrated module, its characterized in that: an anti-reverse connection circuit, a filter circuit, a lightning protection circuit, a slow start circuit, a surge suppression circuit, a power failure protection circuit and a power conversion circuit are sequentially designed in the integrated module;
the anti-reverse connection circuit, the filter circuit, the slow start circuit, the surge suppression circuit, the power failure protection circuit and the power conversion circuit are fixed on a plane through a plane substrate and connected through an embedded multimode interconnection bridge;
the anti-reverse connection circuit and the lightning protection circuit adopt a 3D stacking technology to ensure that front-end surge and peak voltage cannot be transmitted to the rear end;
the power MOS tubes of the anti-reverse connection circuit are all arranged on the bottom layer, the line distance from a control signal to the MOS tubes is controlled to be 0.1mm by utilizing the advantage of stacking space, and the drive and control signals are processed by bonding and crosslinking processes between different chips by adopting pure gold wires, so that the parasitic inductance of the line is below 0.5 nH;
the lightning protection circuit is arranged on the bottom layer, so that an unprocessed electric signal enters the circuit to be processed, and picosecond-level reaction processing is realized;
the power conversion circuit is a switch circuit.
2. The integrated module of claim 1, wherein: the surge suppression circuit and the power conversion circuit are both provided with power MOS tubes, so that power devices are on the bottom layer, the line distance from a driving and control signal to the MOS tubes is reduced to be within 0.1mm by utilizing the advantage of stacking space, the driving and control signal is processed by adopting a bonding and crosslinking process between different chips by adopting pure gold wires, the parasitic inductance of the line is below 0.5nH, and the parasitic resistance is below 1n omega.
3. The integrated module of claim 1, wherein: the anti-reverse connection circuit, the lightning protection circuit and the filter circuit adopt a one-way metal bonding mode, and crosstalk cannot interfere to a post-stage circuit through other media through spatial physical isolation; the filter circuit, the surge suppression circuit, the power failure protection circuit and the power conversion circuit also adopt a metal bonding process, and the crosstalk problem is avoided through spatial physical isolation.
4. The integrated module of claim 1, wherein: the power conversion circuit is a switch circuit, the switch circuit comprises a transformer and a plurality of inductors, so that the transformer and the inductors are required to be arranged in a circuit area, the transformer and the inductors are bonded by a gold wire process and metal, and the parasitic capacitance is below 3 nF.
5. The integrated module of claim 4, wherein: the switch working frequency of the switch circuit is above 5MHz, the distance of a key signal processing line by adopting a pure gold cross-linking process is controlled to be 0.1mm, so that the parasitic inductance of the line between a driving signal and an MOS tube is below 0.5nH, the parasitic resistance is below 1n omega, and the parasitic capacitance is below 0.5 nF.
6. The integrated module of claim 1, wherein: the distance between the planar substrate and the shell pins is controlled to be 0.5mm by adopting a metal bonding process, and the planar substrate and the shell pins are sealed and welded in parallel in an encapsulating inert gas.
7. The integrated module of claim 1, wherein: the integrated module size is 37 × 29 × 8.5 mm.
8. The integrated module of claim 1, wherein: the input working voltage range of the integrated module is 9-50V, and the output voltage is +5V and +/-15V multi-path voltage.
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| CN115177879A (en) * | 2022-07-13 | 2022-10-14 | 应急管理部上海消防研究所 | Solid oxygen generating device |
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| CN210956661U (en) * | 2019-12-25 | 2020-07-07 | 力特半导体（无锡）有限公司 | Stacked chip structure |
| CN110957901A (en) * | 2019-12-31 | 2020-04-03 | 成都国翼电子技术有限公司 | Power supply protection circuit meeting GJB181A standard |
| CN111640682A (en) * | 2020-05-31 | 2020-09-08 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Gold wire bonding transition structure of separation device |
| CN212413040U (en) * | 2020-07-23 | 2021-01-26 | 广东美的制冷设备有限公司 | Intelligent power module and air conditioner |
| CN112072910A (en) * | 2020-07-27 | 2020-12-11 | 恒宇信通航空装备(北京)股份有限公司 | Small-power supply meeting national military standard airborne equipment |
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| CN113982728A (en) * | 2021-11-19 | 2022-01-28 | 一汽解放汽车有限公司 | Engine tail gas detection system and method |
| CN115177879A (en) * | 2022-07-13 | 2022-10-14 | 应急管理部上海消防研究所 | Solid oxygen generating device |
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