CN113300117A - Reflecting plate and reflector with switchable working states - Google Patents
Reflecting plate and reflector with switchable working states Download PDFInfo
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- CN113300117A CN113300117A CN202110596946.9A CN202110596946A CN113300117A CN 113300117 A CN113300117 A CN 113300117A CN 202110596946 A CN202110596946 A CN 202110596946A CN 113300117 A CN113300117 A CN 113300117A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/23—Combinations of reflecting surfaces with refracting or diffracting devices
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Abstract
The invention relates to a reflecting plate with switchable working states, which comprises a reflecting plate body, wherein a plurality of AFSS units are arranged on the reflecting plate body, and each AFSS unit comprises a first metal sheet layer, a second metal sheet layer, a first PIN diode and a second PIN diode; the first metal sheet layer and the second metal sheet layer respectively comprise a first metal patch, a second metal patch, a third metal patch and a fourth metal patch; one end of the first PIN diode is conducted with the first metal patch of the first metal sheet layer, and the other end of the first PIN diode is conducted with the third metal patch of the first metal sheet layer; one end of the second PIN diode is conducted with the second metal patch of the second metal sheet layer, and the other end of the second PIN diode is conducted with the fourth metal patch of the second metal sheet layer. The reflecting plate with the switchable working state has the characteristics of simple structure, scientific design, wide application range, good use effect and the like, and can realize the switching between two states of reflecting electromagnetic waves and transmitting electromagnetic waves. The invention also relates to a reflector.
Description
Technical Field
The invention relates to the technical field of communication equipment, in particular to a reflecting plate with switchable working states; the invention also relates to a reflector.
Background
The traditional luneberg lens reflector is characterized in that a single metal reflecting layer is coated on one part of the surface of a luneberg lens ball, or a single metal plate is adhered to the electromagnetic wave convergence position to serve as a reflecting plate, and the luneberg lens reflector applying the reflecting plate with the structure can reflect the collected electromagnetic waves back through the luneberg lens after passing through the reflecting surface of the reflecting plate. Due to the concentration of the energy, the intensity of the reflected electromagnetic wave is enhanced, thereby obtaining enhanced RCS, i.e., a change in operating state. In the prior aircraft, especially, a luneberg lens reflector is generally installed on an invisible fighter, under the training condition, a command center needs to monitor the actual condition of the fighter all the time, under the condition, the invisible fighter exposes the luneberg lens reflector, so that electromagnetic waves emitted by a radar pass through a reflecting plate of the luneberg lens reflector and then are reflected back through the luneberg lens, and the radar receives enhanced RCS (radar cross-section), so that the command center can clearly know the position of the fighter; however, in a battle scene, in order to avoid an enemy radar from finding a fighter, the reflection of electromagnetic waves by the fighter needs to be reduced as much as possible in the situation, but the reflecting plate of the existing luneberg lens reflector only has the function of reflecting the electromagnetic waves, so that the exposed luneberg lens reflector can enhance and reflect the electromagnetic waves and then easily expose the position of the electromagnetic waves in the battle scene, and the possibility of the fighter being knocked down is increased. Based on the defects of the existing reflector for the luneberg lens in use, it is urgently needed to design a reflector which can be switched between a reflection state and a transmission state so as to meet the use requirement.
Disclosure of Invention
The invention aims to provide a reflecting plate with switchable working states, which has the advantages of simple structure, scientific design, wide application range, good use effect and the like, and can realize switching between two states of reflecting electromagnetic waves and transmitting electromagnetic waves.
The technical scheme of the reflecting plate with switchable working states is realized as follows: a reflecting plate with switchable working states comprises a reflecting plate body and is characterized in that a plurality of AFSS units are arranged on the reflecting plate body, and the AFSS units are arranged in a rectangular array; the AFSS unit comprises a first metal sheet layer, a second metal sheet layer, a first PIN diode, a second PIN diode, an array center A and an array center B, wherein:
the first metal sheet layer and the array center A are arranged on the front surface of the reflector body, and the second metal sheet layer and the array center B are arranged on the back surface of the reflector body; the first metal sheet layer and the second metal sheet layer respectively comprise a first metal patch, a second metal patch, a third metal patch and a fourth metal patch; the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the first metal sheet layer are sequentially arranged in an annular array by taking an array center A as a center, the distance between the first metal patch of the first metal sheet layer and the third metal patch of the first metal sheet layer is in the range of 0.7-0.9 mm, and the distance between the second metal patch of the first metal sheet layer and the fourth metal patch of the first metal sheet layer is in the range of 0.7-0.9 mm; the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the second metal sheet layer are sequentially arranged in an annular array by taking the array center B as the center, the distance between the first metal patch of the second metal sheet layer and the third metal patch of the second metal sheet layer is in the range of 0.7-0.9 mm, and the distance between the second metal patch of the second metal sheet layer and the fourth metal patch of the second metal sheet layer is in the range of 0.7-0.9 mm; the first metal patch of the first metal sheet layer is opposite to and mutually communicated with the first metal patch of the second metal sheet layer, the second metal patch of the first metal sheet layer is opposite to and mutually communicated with the second metal patch of the second metal sheet layer, the third metal patch of the first metal sheet layer is opposite to and mutually communicated with the third metal patch of the second metal sheet layer, and the fourth metal patch of the first metal sheet layer is opposite to and mutually communicated with the fourth metal patch of the second metal sheet layer;
the first PIN diode is arranged on the front face of the reflecting plate body, one end of the first PIN diode is conducted with the first metal patch of the first metal sheet layer, and the other end of the first PIN diode is conducted with the third metal patch of the first metal sheet layer;
the second PIN diode is arranged on the back face of the reflecting plate body, one end of the second PIN diode is conducted with the second metal patch of the second metal sheet layer, and the other end of the second PIN diode is conducted with the fourth metal patch of the second metal sheet layer.
The AFSS cell is a source frequency selective surface, which is an artificial control of the Frequency Selective Surface (FSS) filter characteristics by loading active devices (e.g., PIN diodes, varactors, etc.).
Furthermore, the structures of the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the first metal sheet layer and the second metal sheet layer are the same, and the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the first metal sheet layer and the second metal sheet layer are all of a snakelike bent strip-shaped structure.
Furthermore, the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the first metal sheet layer and the second metal sheet layer respectively comprise a first linear belt, a plurality of second linear belts and a third linear belt, the length directions of the first linear belt, the plurality of second linear belts and the third linear belt are mutually parallel, the length of the first linear belt is less than that of the third linear belt, the plurality of second linear belts are positioned between the first linear belt and the third linear belt, and the length of the plurality of second linear belts is greater than that of the first linear belt and less than that of the third linear belt; in a number of second linear zones: the shorter the length of the second linear band closer to the first linear band, the longer the length of the second linear band closer to the third linear band; the first straight-line strips of the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the first metal sheet layer are all arranged close to the center A of the array; the first straight-line strips of the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the second metal sheet layer are all arranged close to the center B of the array.
Further, the tape width of the first linear tape of each of the first metal sheet layer, the first metal patch of the second metal sheet layer, the second metal patch, the third metal patch, and the fourth metal patch is D1; the belt widths of a plurality of second straight belts of the first metal sheet layer, the first metal patch of the second metal sheet layer, the second metal patch, the third metal patch and the fourth metal patch are all D2; the tape width of the third linear tape of each of the first metal sheet layer, the first metal patch of the second metal sheet layer, the second metal patch, the third metal patch, and the fourth metal patch is D3; the belt width D1 and the belt width D2 are both in the range of 0.4 mm-0.8 mm, and the belt width D3 is in the range of 0.2 mm-0.4 mm; the gap width between the first linear belt of each of the first metal sheet layer, the first metal patch of the second metal sheet layer, the second metal patch, the third metal patch and the fourth metal patch and the second linear belt closest to the first linear belt is D4; in the respective a plurality of second linear zones of first metal sheet layer, the first metal paster, second metal paster, third metal paster, the fourth metal paster of second metal sheet layer: the gap width between every two adjacent 2 second straight belts is D5; the width of a gap between each third linear strip of the first metal sheet layer, the first metal patch of the second metal sheet layer, the second metal patch, the third metal patch and the fourth metal patch and the second linear strip closest to the third linear strip is D6; the gap width D4, the gap width D5 and the gap width D6 are all in the range of 0.4 mm-0.8 mm; the strip length L of the third straight strip of each of the first metal sheet layer, the first metal patch of the second metal sheet layer, the second metal patch, the third metal patch and the fourth metal patch is within the range of 6-10 mm.
Furthermore, the lengths of the first PIN diode and the second PIN diode are both in the range of 0.7 mm-0.9 mm.
Furthermore, the reflecting plate body is a dielectric plate, the first metal patch of the first metal sheet layer and the first metal patch of the second metal sheet layer, the second metal patch of the first metal sheet layer and the second metal patch of the second metal sheet layer, the third metal patch of the first metal sheet layer and the third metal patch of the second metal sheet layer, and the fourth metal patch of the first metal sheet layer and the fourth metal patch of the second metal sheet layer are all conducted through the metallization hole formed in the reflecting plate body.
The switchable reflecting plate of this operating condition's beneficial effect: when in use, the first PIN diode and the second PIN diode of each AFSS unit on the reflecting plate body are controlled by an external bias voltage, when the input bias voltage is greater than the voltage required by the switching state, the first PIN diode and the second PIN diode are in the conducting state, so that the first metal patch of the first metal sheet layer, the third metal patch of the first metal sheet layer, the first metal patch of the second metal sheet layer and the third metal patch of the second metal sheet layer of each AFSS unit are in the conducting state, and the second metal patch of the first metal sheet layer, the fourth metal patch of the first metal sheet layer, the second metal patch of the second metal sheet layer and the fourth metal patch of the second metal sheet layer are in the conducting state, so that each switchable AFSS unit is in the transmission characteristic, and electromagnetic waves can be transmitted out after touching the reflecting plate in the working state; when the bias voltage is 0, the first PIN diode and the second PIN diode of each AFSS unit on the reflecting plate body are both in a cut-off state, so that each AFSS unit has a reflection characteristic, electromagnetic waves touching the reflecting plate with the switchable working state can be reflected, the reflecting plate with the switchable working state can be switched between two states of reflecting the electromagnetic waves and transmitting the electromagnetic waves through the design, and the reflecting plate with the switchable working state has the advantages of simple structure, scientific design, capability of realizing switching between two states of reflecting the electromagnetic waves and transmitting the electromagnetic waves, wide application range, good use effect and the like.
The invention also provides a reflector which has the advantages of simple structure, scientific design, wide application range, good use effect and the like, can realize switching between two states of reflecting electromagnetic waves and transmitting electromagnetic waves, and has the advantages of wide application range
The technical scheme of the reflector is realized as follows: a reflector is characterized by comprising a Luneberg lens and a reflecting plate, wherein the reflecting plate is the reflecting plate with switchable working states in the previous scheme, and the front surface of the reflecting plate is opposite to the Luneberg lens.
The luneberg lens is of a spherical structure and comprises a first dielectric constant layer, a second dielectric constant layer, a third dielectric constant layer and a fourth dielectric constant layer, wherein the first dielectric constant layer, the second dielectric constant layer, the third dielectric constant layer and the fourth dielectric constant layer are sequentially wrapped layer by layer, the dielectric constant of the first dielectric constant layer is within a range of 1.8-1.9, the dielectric constant of the second dielectric constant layer is within a range of 1.5-1.6, the dielectric constant of the third dielectric constant layer is within a range of 1.2-1.3, and the dielectric constant of the fourth dielectric constant layer is within a range of 1-1.1.
Further, the thickness H1 of the first dielectric constant layer is in the range of 190mm to 230mm, the thickness H2 of the second dielectric constant layer is in the range of 30mm to 55mm, the thickness H3 of the third dielectric constant layer is in the range of 20mm to 45mm, and the thickness H4 of the fourth dielectric constant layer is in the range of 10mm to 30 mm.
Furthermore, the reflecting plate is a plane plate, and a connecting line of the spherical center of the luneberg lens and the center of the front surface of the reflecting plate is perpendicular to the front surface of the reflecting plate.
Still further, the radius of the luneberg lens is in the range of 180mm to 230mm, the distance between the front surface of the reflection plate and the surface of the luneberg lens is D7, and the length of the distance D7 is in the range of 1mm to 5 mm.
Still further, the reflector is curved into a spherical panel, and the center of the reflector overlaps the center of the luneberg lens.
The reflector has the beneficial effects that: when in use, the first PIN diode and the second PIN diode of each AFSS unit on the reflecting plate are controlled by an external bias voltage, when the input bias voltage is greater than the voltage required by the switching state, the first PIN diode and the second PIN diode are in a conducting state, so that the first metal patch of the first metal sheet layer, the third metal patch of the first metal sheet layer, the first metal patch of the second metal sheet layer and the third metal patch of the second metal sheet layer of each AFSS unit on the reflecting plate are in a conducting state, and the second metal patch of the first metal sheet layer, the fourth metal patch of the first metal sheet layer, the second metal patch of the second metal sheet layer and the fourth metal patch of the second metal sheet layer are in a conducting state, so that each AFSS unit on the reflecting plate is in a transmission characteristic, and electromagnetic waves passing through the Luneberg lens of the reflector can be emitted out through the reflecting plate; when the bias voltage is 0, the first PIN diode and the second PIN diode of each AFSS unit on the reflecting plate are both in a cut-off state, so that each AFSS unit on the reflecting plate has a reflection characteristic, and electromagnetic waves penetrating through the luneberg lens of the reflector can be reflected by the reflecting plate and then emitted out again through the luneberg lens, and the reflector can be switched between two states of reflecting the electromagnetic waves and transmitting the electromagnetic waves through the design, so that the working state of the reflector can be switched within 2GHz-6 GHz by combining the luneberg lens with the AFSS units, and the change of RCS size is variable by means of externally applying the bias voltage; the reflector has the advantages of simple structure, scientific design, wide application range, good use effect and the like, and can realize the switching between two states of reflecting electromagnetic waves and transmitting electromagnetic waves.
Drawings
Fig. 1 is a partial structural schematic diagram of the front surface of embodiment 1.
Fig. 2 is a schematic front view of one of the AFSS units of fig. 1.
Fig. 3 is a schematic diagram of a back structure of one of the AFSS units in fig. 1.
FIG. 4 is a schematic sectional view showing the structure of embodiment 2.
Fig. 5 is a graph showing the state of the scattering parameter S11 when the first PIN diode and the second PIN diode of each AFSS cell on the reflector plate are turned on and off in use according to example 2.
Figure 6 is the RCS curve state diagram of example 2 in use.
Description of reference numerals: 2-a reflector plate; 3-AFSS unit; 4-a first metal sheet layer; 5-a second metal sheet layer; 6-a first PIN diode; 7-a second PIN diode; 8-a first metal patch; 9-a second metal patch; 10-a third metal patch; 20-a fourth metal patch; 30-a first linear belt; 40-a second linear band; 50-a third linear band; 60-metallized holes;
1-a luneberg lens; 11-a first dielectric constant layer; 12-a second dielectric constant layer; 13-a third dielectric constant layer; 14-a fourth dielectric constant layer; 100-reflecting plate.
Detailed Description
Example 1
As shown in fig. 1, fig. 2, and fig. 3, the present embodiment is a reflective plate with switchable working states, which includes a reflective plate body 2, a plurality of AFSS units 3 are disposed on the reflective plate body 2, the AFSS units 3 are arranged in a rectangular array, the AFSS units 3 on the reflective plate body 2 in the present embodiment are 20 × 20 rectangular arrays, a gap between two adjacent AFSS units 3 is less than 1mm, the reflective plate body 2 is a square-shaped plate body, a thickness of the reflective plate body 2 is 0.254mm, and each side length of the reflective plate body 2 is 220 mm; the AFSS unit 3 comprises a first sheet metal layer 4, a second sheet metal layer 5, a first PIN diode 6, a second PIN diode 7, an array center A and an array center B, wherein:
the first metal sheet layer 4 and the array center A are arranged on the front surface of the reflector body 2, and the second metal sheet layer 5 and the array center B are arranged on the back surface of the reflector body 2; the first metal sheet layer 4 and the second metal sheet layer 5 respectively comprise a first metal patch 8, a second metal patch 9, a third metal patch 10 and a fourth metal patch 20, the first metal patch 8, the second metal patch 9, the third metal patch 10 and the fourth metal patch 20 of the first metal sheet layer 4 and the second metal sheet layer 5 are manufactured on the front surface and the back surface of the reflector body 2 correspondingly by adopting a standard PCB (printed circuit board) processing technology, and the first metal patch 8, the second metal patch 9, the third metal patch 10 and the fourth metal patch 20 of the first metal sheet layer 4 and the second metal sheet layer 5 are made of copper with the thickness of 35 mu m; the first metal patch 8, the second metal patch 9, the third metal patch 10 and the fourth metal patch 20 of the first metal sheet layer 4 are sequentially arranged in an annular array by taking an array center A as a center, the distance between the first metal patch 8 of the first metal sheet layer 4 and the third metal patch 10 of the first metal sheet layer 4 is in the range of 0.7 mm-0.9 mm, and the distance between the second metal patch 9 of the first metal sheet layer 4 and the fourth metal patch 20 of the first metal sheet layer 4 is in the range of 0.7 mm-0.9 mm; the first metal patch 8, the second metal patch 9, the third metal patch 10 and the fourth metal patch 20 of the second metal sheet layer 5 are sequentially arranged in an annular array with the array center B as the center, the distance between the first metal patch 8 of the second metal sheet layer 5 and the third metal patch 10 of the second metal sheet layer 5 is in the range of 0.7 mm-0.9 mm, the distance between the second metal patch 9 of the second metal sheet layer 5 and the fourth metal patch 20 of the second metal sheet layer 5 is in the range of 0.7 mm-0.9 mm, and the array of the first metal sheet layer 4 and the second metal sheet layer 5 has geometric characteristics that the polarization stability under the incidence of electromagnetic waves is further improved; the first metal patch 8 of the first metal sheet layer 4 is opposite to and mutually communicated with the first metal patch 8 of the second metal sheet layer 5, the second metal patch 9 of the first metal sheet layer 4 is opposite to and mutually communicated with the second metal patch 9 of the second metal sheet layer 5, the third metal patch 10 of the first metal sheet layer 4 is opposite to and mutually communicated with the third metal patch 10 of the second metal sheet layer 5, and the fourth metal patch 20 of the first metal sheet layer 4 is opposite to and mutually communicated with the fourth metal patch 20 of the second metal sheet layer 5;
the first PIN diode 6 is arranged on the front face of the reflector body 2, one end of the first PIN diode 6 is communicated with the first metal patch 8 of the first metal sheet layer 4, and the other end of the first PIN diode 6 is communicated with the third metal patch 10 of the first metal sheet layer 4;
the second PIN diode 7 is arranged on the back of the reflecting plate body 2, one end of the second PIN diode 7 is communicated with the second metal patch 9 of the second metal sheet layer 5, and the other end of the second PIN diode 7 is communicated with the fourth metal patch 20 of the second metal sheet layer 5; the first PIN diode 6 and the second PIN diode 7 of the embodiment are practically implemented by PIN diodes packaged by BAR50-02L model TSLP-2-1 of INFINeon manufacturer.
As shown in fig. 1, 2 and 3, when the reflective plate with the switchable working state is in use, the first PIN diode 6 and the second PIN diode 7 of each AFSS cell 3 on the reflective plate body 2 are controlled by an applied bias voltage, when the input bias voltage is greater than the voltage required by the switching state, the first PIN diode 6 and the second PIN diode 7 are both in a conducting state, so that the first metal patch 8 of the first metal sheet layer 4, the third metal patch 10 of the first metal sheet layer 4, the first metal patch 8 of the second metal sheet layer 5 and the third metal patch 10 of the second metal sheet layer 5 of each AFSS cell 3 are in a conducting state, the second metal patch 9 of the first metal sheet layer 4, the fourth metal patch 20 of the first metal sheet layer 4, the second metal patch 9 of the second metal sheet layer 5 and the fourth metal patch 20 of the second metal sheet layer 5 are in a conducting state, each AFSS unit 3 is made to be in a transmission characteristic, so that electromagnetic waves can penetrate and be emitted after touching the reflecting plate with the switchable working state; when the bias voltage is 0, the first PIN diode 6 and the second PIN diode 7 of each AFSS unit 3 on the reflection plate body 2 are both in a cut-off state, so that each AFSS unit 3 has a reflection characteristic, and the electromagnetic wave touching the reflection plate switchable in the working state can be reflected.
In order to make the using effect of the switchable reflecting plate in the working state better, the structure of the switchable reflecting plate in the working state is more compact, the miniaturization is realized, and the angle stability of the incident electromagnetic wave is improved, as shown in fig. 1, fig. 2, and fig. 3, the structures of the first metal patch 8, the second metal patch 9, the third metal patch 10, and the fourth metal patch 20 of the first metal sheet layer 4 and the second metal sheet layer 5 are the same, and the first metal patch 8, the second metal patch 9, the third metal patch 10, and the fourth metal patch 20 of the first metal sheet layer 4 and the second metal sheet layer 5 are all in a snake-shaped bent strip-shaped structure.
In order to make the structures of the first metal sheet layer 4 and the second metal sheet layer 5 more reasonable, as shown in fig. 1, fig. 2 and fig. 3, the first metal patch 8, the second metal patch 9, the third metal patch 10 and the fourth metal patch 20 of each of the first metal sheet layer 4 and the second metal sheet layer 5 respectively include a first linear belt 30, a plurality of second linear belts 40 and a third linear belt 50, the length directions of the first linear belt 30, the plurality of second linear belts 40 and the third linear belt 50 are parallel to each other, the length of the first linear belt 30 is smaller than that of the third linear belt 50, the plurality of second linear belts 40 are located between the first linear belt 30 and the third linear belt 50, and the lengths of the plurality of second linear belts 40 are both larger than that of the first linear belt 30 and smaller than that of the third linear belt 50; of the second plurality of linear strips 40: the shorter the length of the second linear strip 40 closer to the first linear strip 30, the longer the length of the second linear strip 40 closer to the third linear strip 50; the first straight-line belts 30 of the first metal patch 8, the second metal patch 9, the third metal patch 10 and the fourth metal patch 20 of the first metal sheet layer 4 are all arranged close to the center A of the array; the first straight-line strips 30 of the first metal patch 8, the second metal patch 9, the third metal patch 10 and the fourth metal patch 20 of the second metal sheet layer 5 are all arranged close to the center B of the array.
Further, in order to make the reflection plate switchable in the present operation state more excellent in transmittance and reflectance against electromagnetic waves when in use, as shown in fig. 2 and 3, the first linear tapes 30 of the first metal sheet layer 4, the first metal patch 8 of the second metal sheet layer 5, the second metal patch 9, the third metal patch 10, and the fourth metal patch 20 have a tape width D1; the tape widths of the plurality of second straight tapes 40 of the first metal sheet layer 4, the first metal patch 8, the second metal patch 9, the third metal patch 10 and the fourth metal patch 20 of the second metal sheet layer 5 are all D2; the tape width of the third linear tape 50 of each of the first metal sheet layer 4, the first metal patch 8 of the second metal sheet layer 5, the second metal patch 9, the third metal patch 10, and the fourth metal patch 20 is D3; the belt width D1 and the belt width D2 are both in the range of 0.4 mm-0.8 mm, the belt width D3 is in the range of 0.2 mm-0.4 mm, the belt width D1 and the belt width D2 in the embodiment are both 0.6mm, and the belt width D3 is 0.3 mm; the gap width between the first straight-line strap 30 of each of the first metal sheet layer 4, the first metal patch 8 of the second metal sheet layer 5, the second metal patch 9, the third metal patch 10 and the fourth metal patch 20 and the second straight-line strap 40 closest to the first straight-line strap is D4; in a plurality of second linear bands 40 of each of the first metal patch 8, the second metal patch 9, the third metal patch 10, and the fourth metal patch 20 of the first metal sheet layer 4 and the second metal sheet layer 5: the gap width between the adjacent 2 second straight strips 40 is D5; the gap width between the third linear tape 50 of each of the first metal sheet layer 4, the first metal patch 8 of the second metal sheet layer 5, the second metal patch 9, the third metal patch 10 and the fourth metal patch 20 and the second linear tape 40 closest to the third linear tape is D6; the gap width D4, the gap width D5 and the gap width D6 are all in the range of 0.4mm to 0.8mm, and the gap width D4, the gap width D5 and the gap width D6 in the embodiment are all specifically 0.6 mm; the strip lengths L of the third linear strips 50 of the first metal patch 8, the second metal patch 9, the third metal patch 10, and the fourth metal patch 20 of the first metal sheet layer 4 and the second metal sheet layer 5 are all within the range of 6-10 mm, and the strip lengths L of the third linear strips 50 of the first metal patch 8, the second metal patch 9, the third metal patch 10, and the fourth metal patch 20 of the first metal sheet layer 4 and the second metal sheet layer 5 in this embodiment are specifically 9.2 mm.
In order to make the structure of the AFSS unit 3 of the reflecting plate switchable in the working state more compact, the reflecting plate switchable in the working state can improve the reflection and transmission efficiency of electromagnetic waves; as shown in fig. 2 and 3, the lengths of the first PIN diode 6 and the second PIN diode 7 are both in the range of 0.7mm to 0.9 mm. In this embodiment, a distance between the first metal patch 8 of the first metal sheet layer 4 and the third metal patch 10 of the first metal sheet layer 4, a distance between the second metal patch 9 of the first metal sheet layer 4 and the fourth metal patch 20 of the first metal sheet layer 4, a distance between the first metal patch 8 of the second metal sheet layer 5 and the third metal patch 10 of the second metal sheet layer 5, a distance between the second metal patch 9 of the second metal sheet layer 5 and the fourth metal patch 20 of the second metal sheet layer 5, a length of the first PIN diode 6, and a length of the second PIN diode 7 are all specifically 0.8 mm.
For more convenient production, as shown in fig. 1, 2 and 3, the reflector body 2 is a dielectric plate, and F4BME (polytetrafluoroethylene) is specifically selected as the dielectric plate, so that the loss tangent value of the electromagnetic wave transmitted through the reflector body 2 is 0.0007; the first metal patch 8 of the first metal sheet layer 4 and the first metal patch 8 of the second metal sheet layer 5, the second metal patch 9 of the first metal sheet layer 4 and the second metal patch 9 of the second metal sheet layer 5, the third metal patch 10 of the first metal sheet layer 4 and the third metal patch 10 of the second metal sheet layer 5, the fourth metal patch 20 of the first metal sheet layer 4 and the fourth metal patch 20 of the second metal sheet layer 5 are all conducted through the metallization hole 60 formed in the reflection plate body 2. When the external bias voltage is connected, the wires of the external bias voltage are connected with the back surface of the reflector body 2, the wires connected with one end of the first PIN diode 6 are connected in the metalized holes 60 for conducting the first metal patch 8 of the first metal sheet layer 4 and the first metal patch 8 of the second metal sheet layer 5, and the wires connected with the other end of the first PIN diode 6 are connected in the metalized holes 60 for conducting the third metal patch 10 of the first metal sheet layer 4 and the third metal patch 10 of the second metal sheet layer 5; the wire connected to one end of the second PIN diode 7 is connected to the metalized hole 60 that connects the second metal patch 9 of the first metal sheet layer 4 to the second metal patch 9 of the second metal sheet layer 5, and the wire connected to the other end of the second PIN diode 7 is connected to the metalized hole 60 that connects the fourth metal patch 20 of the first metal sheet layer 4 to the fourth metal patch 20 of the second metal sheet layer 5.
Example 2
As shown in fig. 4, this embodiment is a reflector, which includes a luneberg lens 1 and a reflection plate 100, where the reflection plate 100 is the reflection plate with switchable working states described in embodiment 1, and a front surface of the reflection plate 100 is opposite to the luneberg lens 1. When the reflector is used, the first PIN diode and the second PIN diode of each AFSS unit on the reflecting plate 100 are controlled by an applied bias voltage, when the input bias voltage is greater than the voltage required by the switching state, the first PIN diode and the second PIN diode are both in the conducting state, so that the first metal patch of the first metal sheet layer, the third metal patch of the first metal sheet layer, the first metal patch of the second metal sheet layer and the third metal patch of the second metal sheet layer of each AFSS unit on the reflecting plate 100 are in the conducting state, the second metal patch of the first metal sheet layer, the fourth metal patch of the first metal sheet layer, the second metal patch of the second metal sheet layer and the fourth metal patch of the second metal sheet layer are in the conducting state, so that each AFSS unit on the reflecting plate 100 is in the transmission characteristic, so that the electromagnetic wave passing through the luneberg lens 1 of the reflector can be emitted through the reflecting plate 100; when the bias voltage is 0, the first PIN diode and the second PIN diode of each AFSS unit on the reflecting plate 100 are both in a cut-off state, so that each AFSS unit on the reflecting plate 100 has a reflection characteristic, and electromagnetic waves penetrating through the luneberg lens 1 of the reflector can be reflected by the reflecting plate 100 and then emitted out again through the luneberg lens 1, the reflector can be switched between two states of reflecting the electromagnetic waves and transmitting the electromagnetic waves through the design, the working state of the reflector can be switched within 2GHz-6 GHz by combining the luneberg lens 1 with the AFSS units, and the change of RCS size can be changed by means of externally applying the bias voltage; the reflector has the advantages of simple structure, scientific design, wide application range, good use effect and the like, and can realize the switching between two states of reflecting electromagnetic waves and transmitting electromagnetic waves.
In order to make the reflector more effective, as shown in fig. 4, the luneberg lens 1 is a spherical structure, the luneberg lens 1 includes a first dielectric constant layer 11, a second dielectric constant layer 12, a third dielectric constant layer 13 and a fourth dielectric constant layer 14, the first dielectric constant layer 11, the second dielectric constant layer 12, the third dielectric constant layer 13 and the fourth dielectric constant layer 14 are sequentially wrapped layer by layer, the dielectric constant of the first dielectric constant layer 11 is in a range of 1.8 to 1.9, the dielectric constant of the second dielectric constant layer 12 is in a range of 1.5 to 1.6, the dielectric constant of the third dielectric constant layer 13 is in a range of 1.2 to 1.3, the dielectric constant of the fourth dielectric constant layer 14 is in a range of 1 to 1.1, the dielectric constant of the first dielectric constant layer 11 of the luneberg lens 1 in this embodiment is specifically 1.85, the dielectric constant of the second dielectric constant layer 12 is specifically 1.58, the dielectric constant of third dielectric constant layer 13 is specifically 1.28, and the dielectric constant of fourth dielectric constant layer 14 is specifically 1.05. In order to meet the requirements of the manufacturing process, a layer of polystyrene with a thickness of 1mm is disposed between the first dielectric constant layer 11 and the second dielectric constant layer 12, between the second dielectric constant layer 12 and the third dielectric constant layer 13, and between the third dielectric constant layer 13 and the fourth dielectric constant layer 14.
In order to make the structure of the luneberg lens 1 more reasonable, as shown in fig. 4, the thickness H1 of the first dielectric constant layer 11 is in the range of 190mm to 230mm, the thickness H2 of the second dielectric constant layer 12 is in the range of 30mm to 55mm, the thickness H3 of the third dielectric constant layer 13 is in the range of 20mm to 45mm, and the thickness H4 of the fourth dielectric constant layer 14 is in the range of 10mm to 30mm, in this embodiment, the thickness H1 of the first dielectric constant layer 11 is specifically 213mm, the thickness H2 of the second dielectric constant layer 12 is specifically 43.5mm, the thickness H3 of the third dielectric constant layer 13 is specifically 34mm, and the thickness H4 of the fourth dielectric constant layer 14 is specifically 15 mm.
As shown in fig. 4, the reflection plate 100 is a flat plate, and a line connecting the center of the luneberg lens 1 and the center of the front surface of the reflection plate 100 is perpendicular to the front surface of the reflection plate 100.
As shown in fig. 4, the radius of the luneberg lens 1 is in the range of 180mm to 230mm, the radius of the luneberg lens 1 in this embodiment is 202mm, the distance between the front surface of the reflection plate 100 and the surface of the luneberg lens 1 is D7, the length of the distance D7 is in the range of 1mm to 5mm, and the length of the distance D7 is 3 mm.
In the application of the present embodiment, as can be seen from fig. 5, when the first PIN diode and the second PIN diode of each AFSS unit on the reflection plate 100 are cut off and the operating frequency is 4.2GHz, the value of the scattering parameter S11 is above-3 dB; when the first PIN diode and the second PIN diode of each AFSS unit on the reflection plate 100 are turned on, the scattering parameter S11 is below-10 dB, and these two conditions correspond to the reflection and transmission operating states.
As shown in fig. 6, when the applied bias voltage is greater than the voltage required for switching the state, the first PIN diode and the second PIN diode of each AFSS cell on the reflector 100 are both in the conducting state, and the reflector 100 has the transmission characteristic, and the overall RCS of the reflector is below-5 dB. When the reflector 100 is not loaded, that is, in a bare ball state, the size of the bare ball RCS is-6 dB, the overall trends of the RCS characteristic curves of the two are the same, and the difference between the RCS values is not large, which indicates that the reflector 100 of the reflector does not work when the first PIN diode and the second PIN diode of each AFSS unit on the reflector 100 are in a conducting state.
As shown in fig. 6, when the applied bias voltage is 0v, the first PIN diode and the second PIN diode of each AFSS cell on the reflection plate 100 are both in the off state, and the reflection plate 100 has the reflection characteristic, and at this time, the overall RCS of the reflector is enhanced to 15dB in the angle range of-32 ° to 32 °, and the value of the RCS is enhanced by 21dB when the first PIN diode and the second PIN diode of each AFSS cell on the reflection plate 100 are in the on state. The RCS of the reflector when the first PIN diode and the second PIN diode of each AFSS unit on the reflecting plate 100 are both in the off state is 15dB in the angle range from-32 ° to 32 ° as compared with the RCS of the conventional luneberg lens reflector using a metal reflecting plate, and the RCS characteristic curves of the two are substantially identical.
Claims (10)
1. The utility model provides a switchable reflecting plate of operating condition, includes the reflecting plate body which characterized in that: the reflecting plate body is provided with a plurality of AFSS units which are arranged in a rectangular array; the AFSS unit comprises a first metal sheet layer, a second metal sheet layer, a first PIN diode, a second PIN diode, an array center A and an array center B, wherein:
the first metal sheet layer and the array center A are arranged on the front surface of the reflector body, and the second metal sheet layer and the array center B are arranged on the back surface of the reflector body; the first metal sheet layer and the second metal sheet layer respectively comprise a first metal patch, a second metal patch, a third metal patch and a fourth metal patch; the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the first metal sheet layer are sequentially arranged in an annular array by taking an array center A as a center, the distance between the first metal patch of the first metal sheet layer and the third metal patch of the first metal sheet layer is in the range of 0.7-0.9 mm, and the distance between the second metal patch of the first metal sheet layer and the fourth metal patch of the first metal sheet layer is in the range of 0.7-0.9 mm; the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the second metal sheet layer are sequentially arranged in an annular array by taking the array center B as the center, the distance between the first metal patch of the second metal sheet layer and the third metal patch of the second metal sheet layer is in the range of 0.7-0.9 mm, and the distance between the second metal patch of the second metal sheet layer and the fourth metal patch of the second metal sheet layer is in the range of 0.7-0.9 mm; the first metal patch of the first metal sheet layer is opposite to and mutually communicated with the first metal patch of the second metal sheet layer, the second metal patch of the first metal sheet layer is opposite to and mutually communicated with the second metal patch of the second metal sheet layer, the third metal patch of the first metal sheet layer is opposite to and mutually communicated with the third metal patch of the second metal sheet layer, and the fourth metal patch of the first metal sheet layer is opposite to and mutually communicated with the fourth metal patch of the second metal sheet layer;
the first PIN diode is arranged on the front face of the reflecting plate body, one end of the first PIN diode is conducted with the first metal patch of the first metal sheet layer, and the other end of the first PIN diode is conducted with the third metal patch of the first metal sheet layer;
the second PIN diode is arranged on the back face of the reflecting plate body, one end of the second PIN diode is conducted with the second metal patch of the second metal sheet layer, and the other end of the second PIN diode is conducted with the fourth metal patch of the second metal sheet layer.
2. A switchable reflective panel as claimed in claim 1, wherein: the structure of the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the first metal sheet layer and the second metal sheet layer are the same, and the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the first metal sheet layer and the second metal sheet layer are all of a snakelike bent strip-shaped structure.
3. A switchable reflective panel as claimed in claim 2, wherein: the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the first metal sheet layer and the second metal sheet layer respectively comprise a first linear belt, a plurality of second linear belts and a third linear belt, the length directions of the first linear belt, the plurality of second linear belts and the third linear belt are mutually parallel, the length of the first linear belt is smaller than that of the third linear belt, the plurality of second linear belts are positioned between the first linear belt and the third linear belt, and the length of the plurality of second linear belts is larger than that of the first linear belt and smaller than that of the third linear belt; in a number of second linear zones: the shorter the length of the second linear band closer to the first linear band, the longer the length of the second linear band closer to the third linear band; the first straight-line strips of the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the first metal sheet layer are all arranged close to the center A of the array; the first straight-line strips of the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the second metal sheet layer are all arranged close to the center B of the array.
4. A switchable reflective panel as claimed in claim 3, wherein: the tape width of the first linear tape of each of the first metal sheet layer, the first metal patch of the second metal sheet layer, the second metal patch, the third metal patch, and the fourth metal patch is D1; the belt widths of a plurality of second straight belts of the first metal sheet layer, the first metal patch of the second metal sheet layer, the second metal patch, the third metal patch and the fourth metal patch are all D2; the tape width of the third linear tape of each of the first metal sheet layer, the first metal patch of the second metal sheet layer, the second metal patch, the third metal patch, and the fourth metal patch is D3; the belt width D1 and the belt width D2 are both in the range of 0.4 mm-0.8 mm, and the belt width D3 is in the range of 0.2 mm-0.4 mm; the gap width between the first linear belt of each of the first metal sheet layer, the first metal patch of the second metal sheet layer, the second metal patch, the third metal patch and the fourth metal patch and the second linear belt closest to the first linear belt is D4; in the respective a plurality of second linear zones of first metal sheet layer, the first metal paster, second metal paster, third metal paster, the fourth metal paster of second metal sheet layer: the gap width between every two adjacent 2 second straight belts is D5; the width of a gap between each third linear strip of the first metal sheet layer, the first metal patch of the second metal sheet layer, the second metal patch, the third metal patch and the fourth metal patch and the second linear strip closest to the third linear strip is D6; the gap width D4, the gap width D5 and the gap width D6 are all in the range of 0.4 mm-0.8 mm; the strip length L of the third straight strip of each of the first metal sheet layer, the first metal patch of the second metal sheet layer, the second metal patch, the third metal patch and the fourth metal patch is within the range of 6-10 mm.
5. A switchable reflective panel according to claim 2, 3 or 4, wherein: the lengths of the first PIN diode and the second PIN diode are both in the range of 0.7 mm-0.9 mm.
6. A reflector, characterized by: the reflection plate comprises a luneberg lens and a reflection plate, wherein the reflection plate is the reflection plate with switchable working states as claimed in any one of claims 1 to 5, and the front surface of the reflection plate is opposite to the luneberg lens.
7. A reflector according to claim 6, characterized in that: the luneberg lens is of a spherical structure and comprises a first dielectric constant layer, a second dielectric constant layer, a third dielectric constant layer and a fourth dielectric constant layer, wherein the first dielectric constant layer, the second dielectric constant layer, the third dielectric constant layer and the fourth dielectric constant layer are sequentially wrapped layer by layer, the dielectric constant of the first dielectric constant layer is within a range of 1.8-1.9, the dielectric constant of the second dielectric constant layer is within a range of 1.5-1.6, the dielectric constant of the third dielectric constant layer is within a range of 1.2-1.3, and the dielectric constant of the fourth dielectric constant layer is within a range of 1-1.1.
8. A reflector according to claim 7, characterized in that: the thickness H1 of the first dielectric constant layer is in the range of 190mm to 230mm, the thickness H2 of the second dielectric constant layer is in the range of 30mm to 55mm, the thickness H3 of the third dielectric constant layer is in the range of 20mm to 45mm, and the thickness H4 of the fourth dielectric constant layer is in the range of 10mm to 30 mm.
9. A reflector according to claim 8, characterized in that: the reflecting plate is a plane plate, and a connecting line of the spherical center of the luneberg lens and the center of the front surface of the reflecting plate is vertical to the front surface of the reflecting plate.
10. A reflector according to claim 9, characterized in that: the radius of the luneberg lens is in the range of 180 mm-230 mm, the distance between the front surface of the reflecting plate and the surface of the luneberg lens is D7, and the length of the distance D7 is in the range of 1 mm-5 mm.
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| CN113871888A (en) * | 2021-09-03 | 2021-12-31 | 广东福顺天际通信有限公司 | Digital programmable luneberg lens reflector |
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