CN113300117B - Reflecting plate and reflector with switchable working states - Google Patents
Reflecting plate and reflector with switchable working states Download PDFInfo
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- CN113300117B CN113300117B CN202110596946.9A CN202110596946A CN113300117B CN 113300117 B CN113300117 B CN 113300117B CN 202110596946 A CN202110596946 A CN 202110596946A CN 113300117 B CN113300117 B CN 113300117B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/23—Combinations of reflecting surfaces with refracting or diffracting devices
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Abstract
The invention relates to a reflecting plate with switchable working states, which comprises a reflecting plate body, wherein a plurality of AFSS units are arranged on the reflecting plate body, and each AFSS unit comprises a first metal sheet layer, a second metal sheet layer, a first PIN diode and a second PIN diode; the first metal sheet layer and the second metal sheet layer comprise a first metal patch, a second metal patch, a third metal patch and a fourth metal patch; one end of the first PIN diode is communicated with the first metal patch of the first metal sheet layer, and the other end of the first PIN diode is communicated with the third metal patch of the first metal sheet layer; one end of the second PIN diode is conducted with the second metal patch of the second metal sheet layer, and the other end of the second PIN diode is conducted with the fourth metal patch of the second metal sheet layer. The reflecting plate with switchable working states has the characteristics of simple structure, scientific design, wide application range, good use effect and the like, and can realize the switching between the two states of reflecting electromagnetic waves and transmitting electromagnetic waves. The invention also relates to a reflector.
Description
Technical Field
The invention relates to the technical field of communication equipment, in particular to a reflecting plate with switchable working states; the invention also relates to a reflector.
Background
The traditional Roxburgh lens reflector is characterized in that a part of the surface of a Robert lens ball is coated with a single metal reflecting layer, or a single metal plate is attached to an electromagnetic wave converging position to serve as a reflecting plate, and the Robert lens reflector with the reflecting plate can reflect the gathered electromagnetic waves back through the Robert lens through the reflecting surface of the reflecting plate. The intensity of the reflected electromagnetic wave is enhanced due to the convergence of energy, thereby obtaining an enhanced RCS, i.e. a change of the operating state. The existing aircraft is provided with a Robert lens reflector, particularly on an invisible fighter, under the condition that training is carried out, a command center needs to monitor the actual condition of the fighter at any time, and under the condition, the invisible fighter exposes the Robert lens reflector, so that electromagnetic waves emitted by a radar pass through a reflecting plate of the Robert lens reflector and then are reflected back through the Robert lens, and further the radar receives enhanced RCS, so that the command center can clearly know the position of the fighter; however, in a fight scene, in order to avoid that the radar of an enemy finds a fighter plane, reflection of electromagnetic waves needs to be reduced as far as possible in the fighter plane, but the reflection plate of the existing luneberg lens reflector only has the function of reflecting the electromagnetic waves, so that the exposed luneberg lens reflector can easily expose the position after enhancing and reflecting the electromagnetic waves in the fighter plane scene, and the possibility of the fighter plane being knocked down is increased. Based on the shortcomings of the existing reflector for the luneberg lens reflector during use, it is highly desirable to design a reflector that can be switched between reflective and transmissive states to meet the use requirements.
Disclosure of Invention
The invention aims to provide the reflecting plate with the switchable working state, which has the advantages of simple structure, scientific design, wide application range, good use effect and the like, and can realize the switching between the two states of reflecting electromagnetic waves and transmitting electromagnetic waves.
The technical scheme of the reflecting plate with switchable working states is realized as follows: the reflecting plate with switchable working states comprises a reflecting plate body and is characterized in that a plurality of AFSS units are arranged on the reflecting plate body and are distributed in a rectangular array; the AFSS unit comprises a first metal sheet layer, a second metal sheet layer, a first PIN diode, a second PIN diode, an array center A and an array center B, wherein:
the first metal sheet layer and the array center A are arranged on the front surface of the reflecting plate body, and the second metal sheet layer and the array center B are arranged on the back surface of the reflecting plate body; the first metal sheet layer and the second metal sheet layer comprise a first metal patch, a second metal patch, a third metal patch and a fourth metal patch; the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the first metal sheet layer are sequentially arranged in an annular array with the array center A as the center, the distance between the first metal patch of the first metal sheet layer and the third metal patch of the first metal sheet layer is in the range of 0.7 mm-0.9 mm, and the distance between the second metal patch of the first metal sheet layer and the fourth metal patch of the first metal sheet layer is in the range of 0.7 mm-0.9 mm; the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the second metal sheet layer are sequentially arranged in an annular array with the array center B as the center, the distance between the first metal patch of the second metal sheet layer and the third metal patch of the second metal sheet layer is in the range of 0.7 mm-0.9 mm, and the distance between the second metal patch of the second metal sheet layer and the fourth metal patch of the second metal sheet layer is in the range of 0.7 mm-0.9 mm; the first metal patch of the first metal sheet layer is opposite to and communicated with the first metal patch of the second metal sheet layer, the second metal patch of the first metal sheet layer is opposite to and communicated with the second metal patch of the second metal sheet layer, the third metal patch of the first metal sheet layer is opposite to and communicated with the third metal patch of the second metal sheet layer, and the fourth metal patch of the first metal sheet layer is opposite to and communicated with the fourth metal patch of the second metal sheet layer;
the first PIN diode is arranged on the front surface of the reflecting plate body, one end of the first PIN diode is communicated with the first metal patch of the first metal sheet layer, and the other end of the first PIN diode is communicated with the third metal patch of the first metal sheet layer;
the second PIN diode is arranged on the back surface of the reflecting plate body, one end of the second PIN diode is conducted with the second metal patch of the second metal sheet layer, and the other end of the second PIN diode is conducted with the fourth metal patch of the second metal sheet layer.
The AFSS unit, i.e. the source frequency selective surface, is manually controlled by loading active devices such as PIN diodes, varactors, etc. to achieve the Frequency Selective Surface (FSS) filtering characteristics.
Further, the structures of the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the first metal sheet layer and the second metal sheet layer are the same, and the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the first metal sheet layer and the second metal sheet layer are all in a serpentine bent strip-shaped structure.
Further, the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the first metal sheet layer and the second metal sheet layer respectively comprise a first linear belt, a plurality of second linear belts and a third linear belt, the length directions of the first linear belt, the plurality of second linear belts and the third linear belt are mutually parallel, the length of the first linear belt is smaller than that of the third linear belt, the plurality of second linear belts are positioned between the first linear belt and the third linear belt, and the lengths of the plurality of second linear belts are larger than that of the first linear belt and smaller than that of the third linear belt; in several second linear bands: the shorter the length of the second linear belt, the closer to the first linear belt, the longer the length of the second linear belt, the closer to the third linear belt; the first linear belts of the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the first metal sheet layer are all close to the array center A; the first linear belts of the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the second metal sheet layer are all close to the array center B.
Further, the bandwidths of the first linear bands of the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the first metal sheet layer and the second metal sheet layer are D1; the bandwidths of a plurality of second linear belts of the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the first metal sheet layer and the second metal sheet layer are D2; the bandwidths of the third linear belts of the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the first metal sheet layer and the second metal sheet layer are D3; the band width D1 and the band width D2 are both in the range of 0.4 mm-0.8 mm, and the band width D3 is in the range of 0.2 mm-0.4 mm; the gap width between the first linear belt of each of the first metal sheet layer, the first metal patch of the second metal sheet layer, the second metal patch, the third metal patch and the fourth metal patch and the second linear belt nearest to the first linear belt is D4; in a plurality of second linear bands of the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the first metal sheet layer and the second metal sheet layer respectively: the gap width between the adjacent 2 second straight lines is D5; the gap width between the third linear belt of each of the first metal sheet layer, the first metal patch of the second metal sheet layer, the second metal patch, the third metal patch and the fourth metal patch and the second linear belt nearest to the third linear belt is D6; the gap width D4, the gap width D5 and the gap width D6 are all in the range of 0.4 mm-0.8 mm; the length L of the third linear belt of each of the first metal sheet layer, the first metal patch of the second metal sheet layer, the second metal patch, the third metal patch and the fourth metal patch is in the range of 6-10 mm.
Further, the lengths of the first PIN diode and the second PIN diode are in the range of 0.7-0.9 mm.
Further, the reflecting plate body is a dielectric plate, the first metal patch of the first metal sheet layer and the first metal patch of the second metal sheet layer, the second metal patch of the first metal sheet layer and the second metal patch of the second metal sheet layer, the third metal patch of the first metal sheet layer and the third metal patch of the second metal sheet layer, and the fourth metal patch of the first metal sheet layer and the fourth metal patch of the second metal sheet layer are all conducted through metallized holes arranged on the reflecting plate body.
The reflecting plate with switchable working states has the beneficial effects that: when the reflection plate is used, the first PIN diode and the second PIN diode of each AFSS unit on the reflection plate body are controlled by externally applied bias voltage, and when the input bias voltage is larger than the voltage required by the switching state in use, the first PIN diode and the second PIN diode are in a conducting state, so that the first metal patch of the first metal sheet layer, the third metal patch of the first metal sheet layer, the first metal patch of the second metal sheet layer and the third metal patch of the second metal sheet layer of each AFSS unit are in a conducting state, and the second metal patch of the first metal sheet layer, the fourth metal patch of the first metal sheet layer, the second metal patch of the second metal sheet layer and the fourth metal patch of the second metal sheet layer are in a conducting state, and each AFSS unit is in a transmission characteristic, so that electromagnetic waves can be transmitted after touching the reflection plate with the switchable working state; when the bias voltage is 0, the first PIN diode and the second PIN diode of each AFSS unit on the reflecting plate body are in a cut-off state, so that each AFSS unit has reflection characteristics, electromagnetic waves touching the reflecting plate with the switchable working state can be reflected, the reflecting plate with the switchable working state can be switched between the two states of reflected electromagnetic waves and transmitted electromagnetic waves through the design, and the reflecting plate with the switchable working state has the advantages of simple structure, scientific design, wide application range, good use effect and the like.
The invention also provides a reflector which has the advantages of simple structure, scientific design, wide application range, good use effect and the like, and can realize the switching between the two states of the reflected electromagnetic wave and the transmitted electromagnetic wave
The technical scheme of the reflector is realized as follows: the reflector is characterized by comprising a Robert lens and a reflecting plate, wherein the reflecting plate is a reflecting plate with a switchable working state according to the previous scheme, and the front surface of the reflecting plate is opposite to the Robert lens.
Further, the primary lens is of a sphere structure, and comprises a first dielectric constant layer, a second dielectric constant layer, a third dielectric constant layer and a fourth dielectric constant layer, wherein the first dielectric constant layer, the second dielectric constant layer, the third dielectric constant layer and the fourth dielectric constant layer are sequentially wrapped layer by layer, the dielectric constant of the first dielectric constant layer is in the range of 1.8-1.9, the dielectric constant of the second dielectric constant layer is in the range of 1.5-1.6, the dielectric constant of the third dielectric constant layer is in the range of 1.2-1.3, and the dielectric constant of the fourth dielectric constant layer is in the range of 1-1.1.
Further, the thickness H1 of the first dielectric constant layer is in the range of 190mm to 230mm, the thickness H2 of the second dielectric constant layer is in the range of 30mm to 55mm, the thickness H3 of the third dielectric constant layer is in the range of 20mm to 45mm, and the thickness H4 of the fourth dielectric constant layer is in the range of 10mm to 30 mm.
Still further, the reflecting plate is a plane plate, and the connecting line between the spherical center of the luneberg lens and the center of the front surface of the reflecting plate is perpendicular to the front surface of the reflecting plate.
Still further, the radius of the Robert lens is in the range of 180 mm-230 mm, the distance from the front surface of the reflecting plate to the surface of the Robert lens is D7, and the length of the distance D7 is in the range of 1 mm-5 mm.
Still further, the reflecting plate is bent into a sphere panel, and the sphere center of the reflecting plate is overlapped with the sphere center of the luneberg lens.
The beneficial effect of this reflector: when the LED reflector is used, the first PIN diode and the second PIN diode of each AFSS unit on the reflector are controlled by externally applied bias voltage, and when the input bias voltage is larger than the voltage required by the switching state in use, the first PIN diode and the second PIN diode are in a conducting state, so that the first metal patch, the third metal patch, the first metal patch and the third metal patch of the first metal sheet layer and the fourth metal patch of the second metal sheet layer of each AFSS unit on the reflector are in a conducting state, and the second metal patch, the fourth metal patch and the fourth metal patch of the first metal sheet layer and the second metal sheet layer of the first metal sheet layer are in a conducting state, and each AFSS unit on the reflector is in a transmission characteristic, so that electromagnetic waves passing through the primary lens of the reflector can penetrate the reflector; when the bias voltage is 0, the first PIN diode and the second PIN diode of each AFSS unit on the reflecting plate are in a cut-off state, so that each AFSS unit on the reflecting plate has reflection characteristics, electromagnetic waves passing through the Robert lens of the reflector can be reflected by the reflecting plate and then re-emitted by the Robert lens, the reflector can be switched between two states of reflected electromagnetic waves and transmitted electromagnetic waves through the design, the reflector can be switched in a working state within 2GHz-6 GHz by combining the Robert lens with the AFSS unit, and RCS size change is variable by externally applying bias voltage; the reflector has the advantages of simple structure, scientific design, wide application range, good use effect and the like, and can realize the switching between the two states of reflected electromagnetic waves and transmitted electromagnetic waves.
Drawings
Fig. 1 is a schematic view of a partial structure of the front surface of embodiment 1.
Fig. 2 is a schematic diagram of the front structure of one of the AFSS units in fig. 1.
Fig. 3 is a schematic diagram of the back structure of one of the AFSS units in fig. 1.
Fig. 4 is a schematic cross-sectional structure of embodiment 2.
Fig. 5 is a graph showing the scattering parameter S11 when the first PIN diode and the second PIN diode of each AFSS unit on the reflection plate are turned on and off when example 2 is used.
Fig. 6 is a state diagram of the RCS curve of example 2 in use.
Reference numerals illustrate: 2-reflecting plates; a 3-AFSS unit; 4-a first sheet metal layer; 5-a second sheet metal layer; 6-a first PIN diode; 7-a second PIN diode; 8-a first metal patch; 9-a second metal patch; 10-a third metal patch; 20-fourth metal patch; 30-a first linear belt; 40-a second linear belt; 50-a third linear belt; 60-metallizing the holes;
1-a luneberg lens; 11-a first dielectric constant layer; 12-a second dielectric constant layer; 13-a third dielectric constant layer; 14-a fourth dielectric constant layer; 100-reflecting plate.
Detailed Description
Example 1
As shown in fig. 1, fig. 2 and fig. 3, the embodiment is a switchable-working-state reflecting plate, and includes a reflecting plate body 2, a plurality of AFSS units 3 are arranged on the reflecting plate body 2, the AFSS units 3 are arranged in a rectangular array, the AFSS units 3 on the reflecting plate body 2 in the embodiment are rectangular arrays of 20 x 20, the gap between every two adjacent 2 AFSS units 3 is smaller than 1mm, the reflecting plate body 2 is a square-shaped structural plate body, the thickness of the reflecting plate body 2 is 0.254mm, and the side lengths of the reflecting plate body 2 are 220mm; the AFSS unit 3 comprises a first sheet metal layer 4, a second sheet metal layer 5, a first PIN diode 6, a second PIN diode 7, an array center a and an array center B, wherein:
the first metal sheet layer 4 and the array center A are arranged on the front surface of the reflecting plate body 2, and the second metal sheet layer 5 and the array center B are arranged on the back surface of the reflecting plate body 2; the first metal sheet layer 4 and the second metal sheet layer 5 respectively comprise a first metal patch 8, a second metal patch 9, a third metal patch 10 and a fourth metal patch 20, the first metal patch 8, the second metal patch 9, the third metal patch 10 and the fourth metal patch 20 of the first metal sheet layer 4 and the second metal sheet layer 5 are respectively manufactured on the front surface and the back surface of the reflecting plate body 2 by adopting a standard PCB processing technology, and the first metal patch 8, the second metal patch 9, the third metal patch 10 and the fourth metal patch 20 of the first metal sheet layer 4 and the second metal sheet layer 5 are respectively manufactured by adopting copper with the thickness of 35 mu m; the first metal patch 8, the second metal patch 9, the third metal patch 10 and the fourth metal patch 20 of the first metal sheet layer 4 are sequentially arranged in an annular array with the array center A as the center, the distance between the first metal patch 8 of the first metal sheet layer 4 and the third metal patch 10 of the first metal sheet layer 4 is in the range of 0.7 mm-0.9 mm, and the distance between the second metal patch 9 of the first metal sheet layer 4 and the fourth metal patch 20 of the first metal sheet layer 4 is in the range of 0.7 mm-0.9 mm; the first metal patch 8, the second metal patch 9, the third metal patch 10 and the fourth metal patch 20 of the second metal sheet layer 5 are sequentially arranged in an annular array with the array center B as the center, the distance between the first metal patch 8 of the second metal sheet layer 5 and the third metal patch 10 of the second metal sheet layer 5 is in the range of 0.7 mm-0.9 mm, the distance between the second metal patch 9 of the second metal sheet layer 5 and the fourth metal patch 20 of the second metal sheet layer 5 is in the range of 0.7 mm-0.9 mm, and the geometric characteristic of the array of the first metal sheet layer 4 and the second metal sheet layer 5 further improves the polarization stability under the incidence of electromagnetic waves; the first metal patch 8 of the first metal sheet layer 4 is opposite to and communicated with the first metal patch 8 of the second metal sheet layer 5, the second metal patch 9 of the first metal sheet layer 4 is opposite to and communicated with the second metal patch 9 of the second metal sheet layer 5, the third metal patch 10 of the first metal sheet layer 4 is opposite to and communicated with the third metal patch 10 of the second metal sheet layer 5, and the fourth metal patch 20 of the first metal sheet layer 4 is opposite to and communicated with the fourth metal patch 20 of the second metal sheet layer 5;
the first PIN diode 6 is arranged on the front surface of the reflecting plate body 2, one end of the first PIN diode 6 is conducted with the first metal patch 8 of the first metal sheet layer 4, and the other end of the first PIN diode 6 is conducted with the third metal patch 10 of the first metal sheet layer 4;
the second PIN diode 7 is arranged on the back surface of the reflecting plate body 2, one end of the second PIN diode 7 is conducted with the second metal patch 9 of the second metal sheet layer 5, and the other end of the second PIN diode 7 is conducted with the fourth metal patch 20 of the second metal sheet layer 5; the first PIN diode 6 and the second PIN diode 7 of the embodiment are packaged by the BAR50-02L model TSLP-2-1 of INFINEON manufacturer.
As shown in fig. 1, 2 and 3, when the switchable reflecting plate in the working state is used, the first PIN diode 6 and the second PIN diode 7 of each AFSS unit 3 on the reflecting plate body 2 are controlled by externally applied bias voltage, and when the input bias voltage is greater than the voltage required by the switching state in use, the first PIN diode 6 and the second PIN diode 7 are in a conducting state, so that the first metal patch 8 of the first metal sheet layer 4, the third metal patch 10 of the first metal sheet layer 4, the first metal patch 8 of the second metal sheet layer 5 and the third metal patch 10 of the second metal sheet layer 5 of each AFSS unit 3 are in a conducting state, and the second metal patch 9 of the first metal sheet layer 4, the fourth metal patch 20 of the first metal sheet layer 4, the second metal patch 9 of the second metal sheet layer 5 and the fourth metal patch 20 of the second metal sheet layer 5 are in a conducting state, so that each AFSS unit 3 is in a transmission characteristic, and the electromagnetic wave can be emitted out after being contacted with the switchable reflecting plate in the working state; when the bias voltage is 0, the first PIN diode 6 and the second PIN diode 7 of each AFSS unit 3 on the reflecting plate body 2 are in a cut-off state, so that each AFSS unit 3 has reflection characteristics, electromagnetic waves touching the reflecting plate with the switchable working state can be reflected, the reflecting plate with the switchable working state can be switched between the two states of reflected electromagnetic waves and transmitted electromagnetic waves through the design, and the reflecting plate with the switchable working state has the advantages of simple structure, scientific design, capability of realizing the switching between the two states of reflected electromagnetic waves and transmitted electromagnetic waves, wide application range, good use effect and the like.
In order to make the use effect of the reflecting plate with switchable working state better, the structure of the reflecting plate with switchable working state is more compact, miniaturization is realized, and the angle stability under the incidence of electromagnetic waves is improved, as shown in fig. 1, 2 and 3, the structures of the first metal patch 8, the second metal patch 9, the third metal patch 10 and the fourth metal patch 20 of the first metal sheet layer 4 and the second metal sheet layer 5 are the same, and the first metal patch 8, the second metal patch 9, the third metal patch 10 and the fourth metal patch 20 of the first metal sheet layer 4 and the second metal sheet layer 5 are all in a serpentine and bent strip-shaped structure.
In order to make the structures of the first metal sheet layer 4 and the second metal sheet layer 5 more reasonable, as shown in fig. 1, 2 and 3, each of the first metal sheet layer 4, the second metal sheet layer 5, the first metal sheet 8, the second metal sheet 9, the third metal sheet 10 and the fourth metal sheet 20 includes a first linear belt 30, a plurality of second linear belts 40 and a third linear belt 50, the lengths of the first linear belt 30, the plurality of second linear belts 40 and the third linear belt 50 are parallel to each other, the length of the first linear belt 30 is smaller than the length of the third linear belt 50, the plurality of second linear belts 40 are located between the first linear belt 30 and the third linear belt 50, and the lengths of the plurality of second linear belts 40 are both larger than the length of the first linear belt 30 and smaller than the length of the third linear belt 50; in the number of second linear belts 40: the shorter the length of the second linear belt 40 closer to the first linear belt 30, the longer the length of the second linear belt 40 closer to the third linear belt 50; the first linear belts 30 of the first metal patch 8, the second metal patch 9, the third metal patch 10 and the fourth metal patch 20 of the first metal sheet layer 4 are all arranged near the array center A; the first linear strips 30 of the first metal patch 8, the second metal patch 9, the third metal patch 10, and the fourth metal patch 20 of the second metal sheet layer 5 are all disposed near the array center B.
Further, in order to make the transmittance and reflectance of electromagnetic waves better when the reflection plate with switchable working state is used, as shown in fig. 2 and 3, the bandwidths of the first linear belts 30 of the first metal sheet layer 4, the first metal patch 8, the second metal patch 9, the third metal patch 10 and the fourth metal patch 20 of the second metal sheet layer 5 are D1; the bandwidths of the second linear belts 40 of the first metal sheet layer 4, the first metal patch 8, the second metal patch 9, the third metal patch 10 and the fourth metal patch 20 of the second metal sheet layer 5 are all D2; the strip width of the third linear strip 50 of each of the first metal sheet layer 4, the first metal patch 8, the second metal patch 9, the third metal patch 10, and the fourth metal patch 20 of the second metal sheet layer 5 is D3; the band width D1 and the band width D2 are both in the range of 0.4 mm-0.8 mm, the band width D3 is in the range of 0.2 mm-0.4 mm, and the band width D1 and the band width D2 in the embodiment are both 0.6mm, and the band width D3 is 0.3mm; the gap width between the first linear belt 30 of each of the first metal sheet layer 4, the first metal patch 8, the second metal patch 9, the third metal patch 10 and the fourth metal patch 20 and the second linear belt 40 nearest to the first metal sheet layer 4, the second metal sheet layer 5 is D4; the first metal patch 8, the second metal patch 9, the third metal patch 10 and the fourth metal patch 20 of the first metal sheet layer 4 and the second metal sheet layer 5 are respectively arranged in a plurality of second linear belts 40: the gap width between the adjacent 2 second linear belts 40 is D5; the gap width between the third linear belt 50 of each of the first metal sheet layer 4, the first metal patch 8, the second metal patch 9, the third metal patch 10 and the fourth metal patch 20 and the second linear belt 40 nearest to the third metal patch layer 4, the second metal patch 5 is D6; the gap width D4, the gap width D5 and the gap width D6 are all in the range of 0.4mm to 0.8mm, and the gap width D4, the gap width D5 and the gap width D6 in the embodiment are all specifically 0.6mm; the length L of the third linear belt 50 of each of the first metal patch 8, the second metal patch 9, the third metal patch 10, and the fourth metal patch 20 of the first metal sheet layer 4, the second metal patch 5, and the first metal patch 8, the second metal patch 9, the third metal patch 10, and the fourth metal patch 20 of the present embodiment is in the range of 6 to 10mm, and the length L of the third linear belt 50 of each of the first metal sheet layer 4, the second metal patch 5, and the third metal patch 10 is specifically 9.2mm.
In order to make the structure of the AFSS unit 3 of the reflecting plate with the switchable working state more compact, the reflecting plate with the switchable working state can reflect and transmit electromagnetic waves more efficiently; as shown in fig. 2 and 3, the lengths of the first PIN diode 6 and the second PIN diode 7 are each in the range of 0.7mm to 0.9 mm. The spacing between the first metal patch 8 of the first metal sheet layer 4 and the third metal patch 10 of the first metal sheet layer 4, the spacing between the second metal patch 9 of the first metal sheet layer 4 and the fourth metal patch 20 of the first metal sheet layer 4, the spacing between the first metal patch 8 of the second metal sheet layer 5 and the third metal patch 10 of the second metal sheet layer 5, the spacing between the second metal patch 9 of the second metal sheet layer 5 and the fourth metal patch 20 of the second metal sheet layer 5, the length of the first PIN diode 6, and the length of the second PIN diode 7 are all specifically 0.8mm.
For convenience in production, as shown in fig. 1, 2 and 3, the reflecting plate body 2 is a dielectric plate, and the dielectric plate specifically selects F4BME (polytetrafluoroethylene), so that the loss tangent value of electromagnetic waves transmitted through the reflecting plate body 2 is 0.0007; the first metal patch 8 of the first metal sheet layer 4 and the first metal patch 8 of the second metal sheet layer 5, the second metal patch 9 of the first metal sheet layer 4 and the second metal patch 9 of the second metal sheet layer 5, the third metal patch 10 of the first metal sheet layer 4 and the third metal patch 10 of the second metal sheet layer 5, and the fourth metal patch 20 of the first metal sheet layer 4 and the fourth metal patch 20 of the second metal sheet layer 5 are all conducted through the metallized holes 60 provided on the reflecting plate body 2. When the bias voltage is applied, the wires for applying the bias voltage are connected with the back surface of the reflecting plate body 2, the wires connected with one end of the first PIN diode 6 are connected in the metallized holes 60 for conducting the first metal patch 8 of the first metal sheet layer 4 and the first metal patch 8 of the second metal sheet layer 5, and the wires connected with the other end of the first PIN diode 6 are connected in the metallized holes 60 for conducting the third metal patch 10 of the first metal sheet layer 4 and the third metal patch 10 of the second metal sheet layer 5; the electric wire connected to one end of the second PIN diode 7 is connected to the metallized hole 60 for conducting the second metal patch 9 of the first metal sheet layer 4 and the second metal patch 9 of the second metal sheet layer 5, and the electric wire connected to the other end of the second PIN diode 7 is connected to the metallized hole 60 for conducting the fourth metal patch 20 of the first metal sheet layer 4 and the fourth metal patch 20 of the second metal sheet layer 5.
Example 2
As shown in fig. 4, this embodiment is a reflector, which includes a luneberg lens 1 and a reflecting plate 100, where the reflecting plate 100 is a reflecting plate whose operation state is switchable as described in embodiment 1, and the front surface of the reflecting plate 100 is opposite to the luneberg lens 1. When the reflector is used, the first PIN diode and the second PIN diode of each AFSS unit on the reflector plate 100 are controlled by externally applied bias voltage, and when the input bias voltage is larger than the voltage required by the switching state in use, the first PIN diode and the second PIN diode are in a conducting state, so that the first metal patch, the third metal patch, the first metal patch and the third metal patch of each AFSS unit on the reflector plate 100 are in a conducting state, and the second metal patch, the fourth metal patch and the fourth metal patch of each AFSS unit on the reflector plate 100 are in a conducting state, so that electromagnetic waves passing through the primary lens 1 of the reflector can penetrate through the reflector plate 100; when the bias voltage is 0, the first PIN diode and the second PIN diode of each AFSS unit on the reflecting plate 100 are in a cut-off state, so that each AFSS unit on the reflecting plate 100 has reflection characteristics, electromagnetic waves passing through the Robert lens 1 of the reflector can be reflected by the reflecting plate 100 and then re-emitted by the Robert lens 1, the reflector can be switched between two states of reflected electromagnetic waves and transmitted electromagnetic waves through the design, the working state of the reflector can be switched within 2GHz-6 GHz by combining the Robert lens 1 with the AFSS unit, and RCS size change can be changed by externally applying the bias voltage; the reflector has the advantages of simple structure, scientific design, wide application range, good use effect and the like, and can realize the switching between the two states of reflected electromagnetic waves and transmitted electromagnetic waves.
In order to make the use effect of the reflector better, as shown in fig. 4, the primary lens 1 is a spherical structure, the primary lens 1 includes a first dielectric constant layer 11, a second dielectric constant layer 12, a third dielectric constant layer 13 and a fourth dielectric constant layer 14, the first dielectric constant layer 11, the second dielectric constant layer 12, the third dielectric constant layer 13 and the fourth dielectric constant layer 14 are sequentially wrapped and arranged layer by layer, the dielectric constant of the first dielectric constant layer 11 is in the range of 1.8-1.9, the dielectric constant of the second dielectric constant layer 12 is in the range of 1.5-1.6, the dielectric constant of the third dielectric constant layer 13 is in the range of 1.2-1.3, the dielectric constant of the fourth dielectric constant layer 14 is in the range of 1-1.1, the dielectric constant of the first dielectric constant layer 11 of the primary lens 1 in this embodiment is specifically 1.85, the dielectric constant of the second dielectric constant layer 12 is specifically 1.58, the dielectric constant of the third dielectric constant layer 13 is specifically 1.28, and the dielectric constant of the fourth dielectric constant layer 14 is specifically 1.05. In order to meet the requirements of the manufacturing process, a polystyrene layer with a thickness of 1mm is arranged between the first dielectric constant layer 11 and the second dielectric constant layer 12, between the second dielectric constant layer 12 and the third dielectric constant layer 13, and between the third dielectric constant layer 13 and the fourth dielectric constant layer 14.
In order to make the structure of the luneberg lens 1 more reasonable, as shown in fig. 4, the thickness H1 of the first dielectric constant layer 11 is in the range of 190mm to 230mm, the thickness H2 of the second dielectric constant layer 12 is in the range of 30mm to 55mm, the thickness H3 of the third dielectric constant layer 13 is in the range of 20mm to 45mm, the thickness H4 of the fourth dielectric constant layer 14 is in the range of 10mm to 30mm, the thickness H1 of the first dielectric constant layer 11 is specifically 213mm, the thickness H2 of the second dielectric constant layer 12 is specifically 43.5mm, the thickness H3 of the third dielectric constant layer 13 is specifically 34mm, and the thickness H4 of the fourth dielectric constant layer 14 is specifically 15mm.
As shown in fig. 4, the reflecting plate 100 is a planar plate, and a line connecting the center of the sphere of the luneberg lens 1 and the center of the front surface of the reflecting plate 100 is perpendicular to the front surface of the reflecting plate 100.
As shown in fig. 4, the radius of the primary lens 1 is in the range of 180mm to 230mm, the radius of the primary lens 1 in this embodiment is specifically 202mm, the distance from the front surface of the reflecting plate 100 to the surface of the primary lens 1 is D7, the length of the distance D7 is in the range of 1mm to 5mm, and the length of the distance D7 is specifically 3mm.
When the embodiment is applied, as can be seen from fig. 5, when the first PIN diode and the second PIN diode of each AFSS unit on the reflecting plate 100 are cut off and the working frequency is 4.2GHz, the value of the scattering parameter S11 is above-3 dB; when the first PIN diode and the second PIN diode of each AFSS unit on the reflecting plate 100 are conducted, the value of the scattering parameter S11 is below-10 dB, and the two conditions correspond to the reflecting and transmitting working states.
As shown in fig. 6, when the applied bias voltage is greater than the voltage required for switching the state, both the first PIN diode and the second PIN diode of each AFSS unit on the reflecting plate 100 are in the on state, and the reflecting plate 100 has the transmission characteristic, and the overall RCS of the reflector is at most-5 dB. When the reflecting plate 100 is not loaded, namely, the size of the bare ball RCS is-6 dB, the overall trend of the RCS characteristic curves of the bare ball RCS and the bare ball RCS is the same, and the RCS values are not greatly different, which indicates that the reflecting plate 100 of the reflector does not work when the first PIN diode and the second PIN diode of each AFSS unit on the reflecting plate 100 are in a conducting state.
As shown in fig. 6, when the bias voltage applied is 0v, the first PIN diode and the second PIN diode of each AFSS unit on the reflecting plate 100 are in the off state, the reflecting plate 100 has the reflection characteristic, and the overall RCS of the reflector is enhanced to 15dB within the angle range of-32 ° to 32 °, and the value of RCS is enhanced by 21dB when the first PIN diode and the second PIN diode of each AFSS unit on the reflecting plate 100 are in the on state. The RCS of the reflector in the cut-off state of the first PIN diode and the second PIN diode of each AFSS unit on the reflecting plate 100 is 15dB in the angle range of-32 DEG to 32 DEG, and the characteristic curves of the RCS of the first PIN diode and the second PIN diode are basically consistent with those of the RCS of the traditional Boss lens reflector adopting the metal reflecting plate.
Claims (8)
1. The utility model provides a reflecting plate that operating condition is changeable, includes reflecting plate body, its characterized in that: a plurality of AFSS units are arranged on the reflecting plate body and are arranged in a rectangular array; the AFSS unit comprises a first metal sheet layer, a second metal sheet layer, a first PIN diode, a second PIN diode, an array center A and an array center B, wherein:
the first metal sheet layer and the array center A are arranged on the front surface of the reflecting plate body, and the second metal sheet layer and the array center B are arranged on the back surface of the reflecting plate body; the first metal sheet layer and the second metal sheet layer comprise a first metal patch, a second metal patch, a third metal patch and a fourth metal patch; the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the first metal sheet layer are sequentially arranged in an annular array with the array center A as the center, the distance between the first metal patch of the first metal sheet layer and the third metal patch of the first metal sheet layer is in the range of 0.7 mm-0.9 mm, and the distance between the second metal patch of the first metal sheet layer and the fourth metal patch of the first metal sheet layer is in the range of 0.7 mm-0.9 mm; the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the second metal sheet layer are sequentially arranged in an annular array with the array center B as the center, the distance between the first metal patch of the second metal sheet layer and the third metal patch of the second metal sheet layer is in the range of 0.7 mm-0.9 mm, and the distance between the second metal patch of the second metal sheet layer and the fourth metal patch of the second metal sheet layer is in the range of 0.7 mm-0.9 mm; the first metal patch of the first metal sheet layer is opposite to and communicated with the first metal patch of the second metal sheet layer, the second metal patch of the first metal sheet layer is opposite to and communicated with the second metal patch of the second metal sheet layer, the third metal patch of the first metal sheet layer is opposite to and communicated with the third metal patch of the second metal sheet layer, and the fourth metal patch of the first metal sheet layer is opposite to and communicated with the fourth metal patch of the second metal sheet layer;
the first PIN diode is arranged on the front surface of the reflecting plate body, one end of the first PIN diode is communicated with the first metal patch of the first metal sheet layer, and the other end of the first PIN diode is communicated with the third metal patch of the first metal sheet layer;
the second PIN diode is arranged on the back surface of the reflecting plate body, one end of the second PIN diode is communicated with the second metal patch of the second metal sheet layer, and the other end of the second PIN diode is communicated with the fourth metal patch of the second metal sheet layer;
the structures of the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the first metal sheet layer and the second metal sheet layer are the same, and the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the first metal sheet layer and the second metal sheet layer are all in a serpentine bent strip-shaped structure;
the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the first metal sheet layer and the second metal sheet layer respectively comprise a first linear belt, a plurality of second linear belts and a third linear belt, the length directions of the first linear belt, the plurality of second linear belts and the third linear belt are mutually parallel, the length of the first linear belt is smaller than that of the third linear belt, the plurality of second linear belts are positioned between the first linear belt and the third linear belt, and the lengths of the plurality of second linear belts are both larger than that of the first linear belt and smaller than that of the third linear belt; in several second linear bands: the shorter the length of the second linear belt, the closer to the first linear belt, the longer the length of the second linear belt, the closer to the third linear belt; the first linear belts of the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the first metal sheet layer are all close to the array center A; the first linear belts of the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the second metal sheet layer are all close to the array center B.
2. The switchable operating condition reflector of claim 1, wherein: the bandwidths of the first linear bands of the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the first metal sheet layer and the second metal sheet layer are D1; the bandwidths of a plurality of second linear belts of the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the first metal sheet layer and the second metal sheet layer are D2; the bandwidths of the third linear belts of the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the first metal sheet layer and the second metal sheet layer are D3; the band width D1 and the band width D2 are both in the range of 0.4 mm-0.8 mm, and the band width D3 is in the range of 0.2 mm-0.4 mm; the gap width between the first linear belt of each of the first metal sheet layer, the first metal patch of the second metal sheet layer, the second metal patch, the third metal patch and the fourth metal patch and the second linear belt nearest to the first linear belt is D4; in a plurality of second linear bands of the first metal patch, the second metal patch, the third metal patch and the fourth metal patch of the first metal sheet layer and the second metal sheet layer respectively: the gap width between the adjacent 2 second straight lines is D5; the gap width between the third linear belt of each of the first metal sheet layer, the first metal patch of the second metal sheet layer, the second metal patch, the third metal patch and the fourth metal patch and the second linear belt nearest to the third linear belt is D6; the gap width D4, the gap width D5 and the gap width D6 are all in the range of 0.4 mm-0.8 mm; the length L of the third linear belt of each of the first metal sheet layer, the first metal patch of the second metal sheet layer, the second metal patch, the third metal patch and the fourth metal patch is in the range of 6-10 mm.
3. The switchable operating condition reflector of claim 2, wherein: the lengths of the first PIN diode and the second PIN diode are in the range of 0.7 mm-0.9 mm.
4. A reflector, characterized by: comprising a luneberg lens and a reflecting plate, wherein the reflecting plate is a switchable operating state reflecting plate according to any one of claims 1 to 3, and the front surface of the reflecting plate is opposite to the luneberg lens.
5. A reflector as defined in claim 4, wherein: the primary lens is of a sphere structure and comprises a first dielectric constant layer, a second dielectric constant layer, a third dielectric constant layer and a fourth dielectric constant layer, wherein the first dielectric constant layer, the second dielectric constant layer, the third dielectric constant layer and the fourth dielectric constant layer are sequentially wrapped layer by layer, the dielectric constant of the first dielectric constant layer is in the range of 1.8-1.9, the dielectric constant of the second dielectric constant layer is in the range of 1.5-1.6, the dielectric constant of the third dielectric constant layer is in the range of 1.2-1.3, and the dielectric constant of the fourth dielectric constant layer is in the range of 1-1.1.
6. A reflector as defined in claim 5, wherein: the thickness H1 of the first dielectric constant layer is in the range of 190mm to 230mm, the thickness H2 of the second dielectric constant layer is in the range of 30mm to 55mm, the thickness H3 of the third dielectric constant layer is in the range of 20mm to 45mm, and the thickness H4 of the fourth dielectric constant layer is in the range of 10mm to 30 mm.
7. A reflector as claimed in claim 6, wherein: the reflecting plate is a plane plate, and the connecting line of the spherical center of the luneberg lens and the center of the front surface of the reflecting plate is vertical to the front surface of the reflecting plate.
8. A reflector as claimed in claim 7, wherein: the radius of the Robert lens is in the range of 180 mm-230 mm, the distance from the front surface of the reflecting plate to the surface of the Robert lens is D7, and the length of the distance D7 is in the range of 1 mm-5 mm.
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| CN108767487A (en) * | 2018-07-20 | 2018-11-06 | 电子科技大学 | A kind of restructural frequency-selective surfaces of bandpass-type Wide stop bands |
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| CN108767487A (en) * | 2018-07-20 | 2018-11-06 | 电子科技大学 | A kind of restructural frequency-selective surfaces of bandpass-type Wide stop bands |
| CN111983741A (en) * | 2020-07-27 | 2020-11-24 | 南京航空航天大学 | RCS (radar cross section) controllable luneberg lens reflector based on active frequency selective surface |
| CN111987439A (en) * | 2020-07-27 | 2020-11-24 | 南京航空航天大学 | Miniaturized passive flexible band-pass frequency selection surface for antenna housing |
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