CN113296293A - Vertical groove type graphene optical modulator structure based on ultrathin cover layer - Google Patents
Vertical groove type graphene optical modulator structure based on ultrathin cover layer Download PDFInfo
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- CN113296293A CN113296293A CN202110562864.2A CN202110562864A CN113296293A CN 113296293 A CN113296293 A CN 113296293A CN 202110562864 A CN202110562864 A CN 202110562864A CN 113296293 A CN113296293 A CN 113296293A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/011—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour in optical waveguides, not otherwise provided for in this subclass
Abstract
The invention discloses a vertical groove type graphene optical modulator structure based on an ultrathin cover layer. The invention belongs to the field of integrated photonics and silicon-based photonics. The modulator sequentially comprises an ultrathin cover layer, a double-layer graphene layer, a vertical groove type optical waveguide and a substrate layer from top to bottom. The vertical groove type optical waveguide is composed of a silicon-based waveguide and a slit. According to the invention, an asymmetric waveguide structure design is adopted, the thickness of the vertical groove type optical waveguide is reduced, and the ultrathin cover layer is introduced to be arranged on the upper layer of the double-layer graphene, so that an optical field can be better limited in the double-layer graphene layer on the slit, the interaction between the optical field and the graphene is effectively improved, and the modulation efficiency of the device is improved. The ultrathin cover layer is a silicon waveguide layer, only one silicon layer is grown on the double-layer graphene layer in the manufacturing process, and the subsequent waveguide structure process is not needed, so that the manufacturing process of the device is greatly simplified. The ultrathin-cover-layer-based vertical-slot graphene optical modulator has the advantages of high modulation rate, compact structure, simple process compatible with CMOS and the like, and can be widely applied to batch high-speed high-density silicon-based optoelectronic integrated systems.
Description
Technical Field
The invention relates to the field of integrated optics and silicon-based photonics, in particular to a vertical groove type graphene optical modulator structure of an ultrathin cover layer, and more particularly, the interaction between graphene and an optical field is enhanced by utilizing the asymmetric structural design of the ultrathin cover layer and a vertical groove type optical waveguide, so that the modulation efficiency of a modulator is improved.
Background
Silicon-based optoelectronic technology has become one of the most promising key technologies in optoelectronic integration generally accepted in the industry because of its advantages compatible with the conventional CMOS process. The optical modulator has important research significance as a core device of a photoelectric device. The silicon-based graphene photoelectric device fully utilizes the excellent optical performance and electrical performance of graphene, and realizes intensity modulation and phase modulation with large bandwidth and ultrahigh speed. In recent years, the research on silicon-based graphene has gained wide attention, and a great deal of research work has been carried out around the modulation rate and modulation efficiency of the modulator. The modulator effectively improves the modulation efficiency and is one of the key technologies for realizing silicon-based photoelectric integration.
In order to improve the modulation efficiency of the modulator, the invention provides a vertical groove type graphene optical modulator structure based on an ultrathin cover layer. The modulator sequentially comprises an ultrathin cover layer, a double-layer graphene layer, a vertical groove type optical waveguide and a substrate layer from top to bottom. The vertical groove type optical waveguide is composed of a silicon waveguide and a slit. The modulator structure adopts an asymmetric waveguide structure design, and an ultrathin cover layer is introduced to be arranged on the upper layer of the double-layer graphene while the thickness of the vertical groove type optical waveguide is reduced. Through the structure, the light field above the slit can be better limited in the double-layer graphene layer, the interaction between the light field and the graphene is effectively improved, and therefore the modulation efficiency of the device is improved. The ultrathin cover layer is a layer of thin silicon waveguide, and only one layer of silicon is grown on the double-layer graphene in the device manufacturing process without a subsequent waveguide structure process, so that the device performance can be improved, and the device manufacturing process can be simplified. The ultrathin-cover-layer-based vertical-slot graphene optical modulator has the advantages of high modulation rate, compact structure, simple process compatible with CMOS and the like, and can be widely applied to batch high-speed high-density silicon-based optoelectronic integrated systems. .
Disclosure of Invention
The silicon optical modulator has the advantages of high speed, large bandwidth, high integration and the like because the manufacturing process of the silicon optical modulator is compatible with the traditional COMS process, thereby having important research significance in an on-chip integrated system. The invention provides a vertical groove type graphene optical modulator structure based on an ultrathin cover layer.
The invention relates to a vertical groove type graphene optical modulator structure based on an ultrathin cover layer, which comprises the ultrathin cover layer (1), a double-layer graphene layer (2), a vertical groove type optical waveguide (3), a substrate layer (4), a first electrode (5) and a second electrode (6); the device comprises an ultrathin cover layer (1), a double-layer graphene layer (2), a vertical groove type optical waveguide (3) and a substrate layer (4) from top to bottom in sequence.
The ultrathin cover layer (1) is positioned between the first electrode (5) and the second electrode (6), and the whole ultrathin cover layer (1) covers the double-layer graphene layer (2). The material of the ultrathin cover layer (1) is silicon material, and the thickness of the ultrathin cover layer (1) is not more than 100nm, because the ultrathin cover layer (1) with the thickness has smaller limiting factor when being used as an optical waveguide alone, the transmission loss in the optical waveguide ultrathin cover layer (1) is larger.
The double-layer graphene layer (2) comprises a first graphene layer (21), a second graphene layer (22) and a medium filling layer (23), wherein the first graphene layer (21) and the second graphene layer (22) are embedded in the medium filling layer (23).
The vertical groove type optical waveguide (3) is buried in the substrate layer (4), the thickness of the vertical groove type optical waveguide (3) is reduced in the design, so that the waveguide limiting factor is reduced, the energy of an evanescent field outside the waveguide is increased, the interaction between an optical field and graphene is improved, the thickness of the thin vertical groove type optical waveguide (3) cannot be too small, and the transmission loss of the optical field mode needs to be ensured to be small.
Preferably, the thickness of the vertical groove type optical waveguide (3) is 140nm to 200nm for an operating wavelength of 1550 nm.
The vertical groove type optical waveguide (3) consists of a slit (32) and a silicon optical waveguide (31), the slit (32) is vertically embedded in the silicon optical waveguide (31), and the height of the slit (32) is the same as that of the silicon optical waveguide (31). The slit is used for controlling the distribution of the light field energy, and the light field energy is concentrated in the slit, so that the energy density of the light field is improved. The slot (32) embedded in the silicon optical waveguide (32) may be a single slot or a plurality of slots.
Preferably, the width of the slit (32) is between 20 and 80nm for an operating wavelength of 1550 nm.
The first graphene layer (21) and the second graphene layer (22) are overlapped above the vertical groove type optical waveguide (3), and the overlapping width is consistent with the width of the vertical groove type optical waveguide (3).
The material of the dielectric filling layer (23) is an insulating material.
Preferably, the thickness of the medium filling layer (23) is 10 nm-50 nm for the working wavelength of 1550nm, and the material of the medium filling layer (23) is Al2O3、TiO2Or hBN.
The first electrode (5) is deposited on the upper end face of the extension of the first graphene layer (21); the second electrode (6) is deposited on the upper end face of the extension on the second graphene layer (22).
Preferably, the material of the first electrode (6) and the second electrode (7) is gold, platinum or palladium.
The invention has the advantages that:
the asymmetric waveguide structure design realized by introducing the ultrathin cover layer better limits the optical field in the double-layer graphene layer above the slit, thereby enhancing the interaction between the optical field and the graphene and improving the modulation efficiency of the device. Meanwhile, in the manufacturing process of the device, the ultrathin cover layer is a silicon waveguide layer, only one layer of silicon is required to grow on the double-layer graphene in the manufacturing process, and a subsequent waveguide structure process is not required, so that the manufacturing process of the device is simplified, the batch and high-density integration is convenient to realize, and the silicon-based optoelectronic integrated system can be widely applied to the silicon-based optoelectronic integrated system.
Drawings
Fig. 1 is a schematic structural diagram of a vertical trench type graphene optical modulator based on an ultra-thin cover layer;
FIG. 2 is a schematic diagram of a vertical-slot optical waveguide structure according to the present invention, in which FIG. 2(a) is a schematic diagram of a single-slot optical waveguide structure, FIG. 2(b) is a schematic diagram of a double-slot optical waveguide structure, FIG. 2(c) is a schematic diagram of a triple-slot optical waveguide structure, and FIG. 2(d) is a schematic diagram of a multi-slot optical waveguide structure
The figure shows that: the silicon optical waveguide comprises an ultrathin cover layer (1), a double-layer graphene layer (2), a vertical groove type optical waveguide (3), a substrate layer (4), a first electrode (5), a second electrode (6), a first graphene layer (21), a second graphene layer (22), a medium filling layer (23), a slit (32) and a silicon optical waveguide (31).
FIG. 3 is a diagram showing a simulation result of optical field distribution according to an embodiment of the present invention, in which FIG. 3(a) is a diagram showing a simulation result of optical field distribution in a single-slot optical waveguide without an ultra-thin cap layer, and FIG. 3(b) is a diagram showing a simulation result of optical field distribution in a single-slot optical waveguide with an ultra-thin cap layer; FIG. 3(c) is a diagram showing the simulation result of optical field distribution of the double-slot optical waveguide without the ultra-thin cap layer; FIG. 3(d) is a diagram showing the simulation result of optical field distribution of the double-groove optical waveguide with the ultra-thin cover layer; FIG. 3(e) is a diagram showing a simulation result of optical field distribution of the tri-groove optical waveguide without the ultra-thin capping layer; FIG. 3(f) is a diagram showing the simulation result of optical field distribution of the tri-groove optical waveguide with the ultra-thin cover layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments.
As shown in fig. 1, the vertical trench type graphene optical modulator structure based on the ultra-thin cover layer mainly comprises the ultra-thin cover layer (1), a double-layer graphene layer (2), a vertical trench type optical waveguide (3), a substrate layer (4), a first electrode (5) and a second electrode (6); in the design, an asymmetric waveguide structure design is adopted, so that stronger optical field distribution can be obtained in the double-layer graphene layer (2) between the ultrathin cover layer (1) and the vertical groove type optical waveguide (3) to increaseThe efficiency of the interaction of graphene and the optical field. Wherein: the ultrathin cover layer (1) is positioned between the first electrode (5) and the second electrode (6) and entirely covers the double-layer graphene layer (2), and the ultrathin cover layer (1) is made of silicon materials usually, the thickness of the ultrathin cover layer is not more than 100nm, so that the limiting factor of light in the ultrathin cover layer (2) is small, and the limiting effect of the inner part of the ultrathin cover layer (1) on the light is reduced; bilayer graphene layer (2) includes first graphene layer (21), second graphene layer (22) and medium filling layer (23), wherein first graphene layer (21) and second graphene layer (22) are embedded perpendicularly in medium filling layer (23), and first graphene layer (21) and second graphene layer (22) overlap in the top of erecting slot type optical waveguide (3), and the width that overlaps is unanimous with the width that erects slot type optical waveguide (3). The dielectric filling layer (23) with the thickness of 10 nm-50 nm for the working wavelength of 1550nm is made of Al2O3、TiO2Or hBN; the vertical groove type optical waveguide (3) is embedded in the substrate layer (4); a first electrode (5) is deposited on the upper end face of the extension of the first graphene layer (21); the second electrode (6) is deposited on the upper end face of the extension on the second graphene layer (22).
As shown in FIG. 2, in the vertical groove type optical waveguide (3) of the present invention, a slit (21) is vertically embedded in a silicon optical waveguide (32) to limit the optical field energy distribution in the slit, the slit (22) in the vertical groove type optical waveguide (3) may be a single slit or a plurality of slits, and the designed width of the slit (32) is between 20 nm and 60nm for an operating wavelength of 1550 nm. Because the double-layer graphene layer (2) is positioned above the vertical groove type optical waveguide (3), the action zone of the graphene and the optical field is positioned above the slit, and in order to increase the optical field energy in the action zone, the optical limiting factor of the vertical groove type optical waveguide (3) is reduced by slightly thinning the vertical groove type optical waveguide (3), the thickness of the vertical groove type optical waveguide (3) is 140 nm-200 nm for the working wavelength of 1550 nm.
In the embodiment, the optical field distribution is simulated and researched, the working wavelength is 1550nm, the thickness (1) of the ultrathin silicon waveguide is 90nm, the thickness (3) of the vertical groove type optical waveguide is 160nm, and the material of the medium filling layer (23) is Al2O3Width of slit (32) 50nm, simulationThe result graph is shown in FIG. 3. Wherein, fig. 3(a) is a simulation result diagram of optical field distribution in the single-groove optical waveguide without the ultra-thin cap layer, and fig. 3(b) is a simulation result diagram of optical field distribution in the single-groove optical waveguide with the ultra-thin cap layer; FIG. 3(c) is a diagram showing the simulation result of optical field distribution of the double-slot optical waveguide without the ultra-thin cap layer; FIG. 3(d) is a diagram showing the simulation result of optical field distribution of the double-groove optical waveguide with the ultra-thin cover layer; FIG. 3(e) is a diagram showing a simulation result of optical field distribution of the tri-groove optical waveguide without the ultra-thin capping layer; FIG. 3(f) is a diagram showing the simulation result of optical field distribution of the tri-groove optical waveguide with the ultra-thin cover layer. Comparing the light field distribution diagram with or without the ultra-thin cover layer in fig. 3, it can be seen that the light field distribution with the ultra-thin cover layer is asymmetric, and the light field energy density in the double-layer graphene layer is significantly improved.
In summary, according to the vertical trench type graphene optical modulator structure based on the ultrathin cover layer, the limitation of the optical field intensity on the double-layer graphene layer is enhanced by using the asymmetric waveguide structure design, so that the interaction efficiency of graphene and an optical field is improved to improve the modulation efficiency of the modulator. The device performance is improved through the ultrathin cover layer, the ultrathin cover layer covers the surface of the double-layer graphene layer, the manufacturing process is simple, and the ultrathin graphene layer is suitable for large-scale integration. Therefore, the vertical groove type graphene optical modulator structure based on the ultrathin cover layer has the advantages of compact structure, high modulation rate, compatibility with a CMOS (complementary metal oxide semiconductor) and simple process, and has an important application prospect in a low-cost and high-density integrated silicon-based optoelectronic integrated system.
The above description is only a preferred embodiment of the present invention, and it will be apparent to those skilled in the art that modifications and adaptations can be made without departing from the principle of the present invention, and such modifications and adaptations are also considered to be within the scope of the present invention.
Claims (9)
1. The utility model provides a erect groove type graphite alkene light modulator structure based on ultra-thin cap layer which characterized in that: the structure comprises an ultrathin cover layer (1), a double-layer graphene layer (2), a vertical groove type optical waveguide (3), a substrate layer (4), a first electrode (5) and a second electrode (6); the device comprises an ultrathin cover layer (1), a double-layer graphene layer (2), a vertical groove type optical waveguide (3) and a substrate layer (4) from top to bottom in sequence.
2. The ultra-thin cap layer-based vertical trench graphene optical modulator structure of claim 1, wherein: the ultrathin cover layer (1) is positioned between the first electrode (5) and the second electrode (6) and the ultrathin cover layer (1); the whole part is covered on the double-layer graphene layer (2); the thickness of the ultrathin cover layer (2) is not more than 100nm, and the material of the ultrathin cover layer (1) is silicon.
3. The ultra-thin cap layer-based vertical trench graphene optical modulator structure of claim 1, wherein: bilayer graphene layer (2) include first graphene layer (21), second graphene layer (22) and medium filling layer (23), wherein first graphene layer (21) and second graphene layer (22) are embedded in medium filling layer (23).
4. The ultra-thin cap layer-based vertical trench graphene optical modulator structure of claim 1, wherein: the vertical groove type optical waveguide (3) is buried in the substrate layer (4), and the thickness of the vertical groove type optical waveguide (3) is 140 nm-200 nm.
5. The ultra-thin cap layer-based vertical trench graphene optical modulator structure of claim 1, wherein: the vertical groove type optical waveguide (3) is composed of a slit (32) and a silicon optical waveguide (31), the slit (32) is vertically embedded in the silicon optical waveguide (31), the height of the slit (32) is the same as that of the silicon optical waveguide (31), and the width of the slit (32) is 20-80 nm.
6. The ultra-thin cap layer-based vertical trench graphene optical modulator structure of claim 3, wherein: the first graphene layer (21) and the second graphene layer (22) are overlapped above the vertical groove type optical waveguide (3), and the overlapping width is consistent with the width of the vertical groove type optical waveguide (3).
7. The ultra-thin cap layer-based vertical trench graphene light modulator structure according to claim 3,the method is characterized in that: the dielectric filling layer (23) is made of an insulating material, the thickness of the dielectric filling layer (23) is 10 nm-50 nm, and the material of the dielectric filling layer (23) is Al2O3、TiO2Or hBN.
8. The ultra-thin cap layer-based vertical trench graphene optical modulator structure according to claims 1 and 3, wherein: the first electrode (5) is deposited on the upper end face of the extending part of the first graphene layer (21); the second electrode (6) is deposited on the upper end face of the extension on the second graphene layer (22).
9. The ultra-thin cap layer-based vertical trench graphene optical modulator structure of claim 1, wherein: the first electrode (6) and the second electrode (7) are made of gold, platinum or palladium.
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| JP2014063098A (en) * | 2012-09-24 | 2014-04-10 | Kochi Univ Of Technology | Optical modulator |
| CN108181735A (en) * | 2017-12-25 | 2018-06-19 | 武汉邮电科学研究院 | A kind of graphene electro-optical modulator and preparation method thereof |
| CN109387956A (en) * | 2018-11-14 | 2019-02-26 | 北京邮电大学 | Graphene electro-optical modulator based on narrow slit wave-guide |
| CN109870832A (en) * | 2019-04-10 | 2019-06-11 | 电子科技大学 | Graphene H-type narrow slit wave-guide polarizes unrelated electrooptical modulator structure design |
| CN110989216A (en) * | 2019-12-30 | 2020-04-10 | 北京邮电大学 | Novel graphene optical modulator structural design |
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- 2021-05-21 CN CN202110562864.2A patent/CN113296293A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014063098A (en) * | 2012-09-24 | 2014-04-10 | Kochi Univ Of Technology | Optical modulator |
| CN108181735A (en) * | 2017-12-25 | 2018-06-19 | 武汉邮电科学研究院 | A kind of graphene electro-optical modulator and preparation method thereof |
| CN109387956A (en) * | 2018-11-14 | 2019-02-26 | 北京邮电大学 | Graphene electro-optical modulator based on narrow slit wave-guide |
| CN109870832A (en) * | 2019-04-10 | 2019-06-11 | 电子科技大学 | Graphene H-type narrow slit wave-guide polarizes unrelated electrooptical modulator structure design |
| CN110989216A (en) * | 2019-12-30 | 2020-04-10 | 北京邮电大学 | Novel graphene optical modulator structural design |
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