CN113285678A - Transconductance amplifier - Google Patents
Transconductance amplifier Download PDFInfo
- Publication number
- CN113285678A CN113285678A CN202110776033.5A CN202110776033A CN113285678A CN 113285678 A CN113285678 A CN 113285678A CN 202110776033 A CN202110776033 A CN 202110776033A CN 113285678 A CN113285678 A CN 113285678A
- Authority
- CN
- China
- Prior art keywords
- circuit
- transconductance
- signal
- output
- amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 31
- 238000002955 isolation Methods 0.000 claims abstract description 23
- 239000003990 capacitor Substances 0.000 claims description 4
- 230000001131 transforming effect Effects 0.000 claims 5
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
- H03F1/48—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a transconductance amplifier, which comprises a buffer isolation circuit, a feedback circuit and a feedback circuit, wherein the buffer isolation circuit is used for isolating an input signal and an output signal; the signal distribution circuit is used for matching the transconductance coefficient to evenly distribute the voltage signals output by the buffer isolation circuit; the transconductance conversion circuit is used for amplifying the voltage signals output by the signal distribution circuit into current signals in equal proportion; the buffer isolation circuit is connected with the signal distribution circuit, and the signal distribution circuit is connected with the transconductance conversion circuit, so that the beneficial effects are that a large current of hundreds of amperes can be output to a load, and when the frequency is from direct current to 40 kilohertz, the precision is within 0.3 percent, and when the frequency is from 40 kilohertz to 200 kilohertz, the precision is within 3 percent.
Description
Technical Field
The invention belongs to the technical field of amplifiers, and particularly relates to a transconductance amplifier.
Background
In a common electronic circuit, a transconductance amplifier can only output dozens of milliamperes generally, and in practical application and theoretical research, particularly in the occasions of circuit simulation, power system simulation and transient analysis, test of various passive devices, calibration test of current sensors, electromagnetic analysis, radio frequency and plasma, low-frequency communication and the like, a verification tool which can output dozens or hundreds of amperes and has the frequency of more than 100K is needed, namely the transconductance amplifier.
The currently commonly used power system simulation amplifier has the following defects: firstly, the current which is output in a broadband mode and cannot be output in hundreds of amperes is met; secondly, the output of a wide frequency band of 100K or more cannot be satisfied in satisfying the large current output. At present, no transconductance amplifier capable of simultaneously outputting large current and wide frequency band exists in the market. The nominal bandwidth of the American Clarke-Hess8100 transconductance amplifier is 0-100K, the output current can reach 100A, but the maximum output voltage is 7V effective value, and the impedance of the output 100A can only be a load below 0.07 ohm, so that the practicability is not realized.
Disclosure of Invention
The present invention provides a transconductance amplifier to solve the technical problem that the transconductance amplifier in the prior art cannot output a wide frequency band and a large current at the same time.
In order to achieve the technical purpose, the technical scheme adopted by the invention is as follows:
a transconductance amplifier, comprising:
the buffer isolation circuit is used for isolating an input signal and an output signal, wherein the input signal and the output signal are both voltage signals;
the signal distribution circuit is used for matching the transconductance coefficient to evenly distribute the voltage signals output by the buffer isolation circuit;
the transconductance conversion circuit is used for amplifying the voltage signals output by the signal distribution circuit into current signals in equal proportion;
the buffer isolation circuit is connected with the signal distribution circuit, and the signal distribution circuit is connected with the transconductance conversion circuit.
Preferably, the buffer isolation circuit includes a first operational amplifier, the first operational amplifier includes a non-inverting input terminal, an inverting input terminal and an output terminal, the non-inverting input terminal is used for inputting the voltage signal, and the output terminal is connected to the inverting input terminal.
Preferably, the signal distribution circuit comprises a plurality of sets of resistors.
Preferably, the number of the transconductance conversion circuits is multiple groups, and the transconductance conversion circuits are connected in parallel.
Preferably, the transconductance conversion circuit includes a second operational amplifier and a third operational amplifier, the second operational amplifier is connected to the signal distribution circuit, and the third operational amplifier is connected to the second operational amplifier.
Preferably, the transconductance conversion circuit further includes a high-frequency channel unit and a current boost circuit, and the high-frequency channel unit is connected to the current boost circuit.
Preferably, the high frequency channel unit includes a first diode, a second diode, and a resistor, and the resistor is connected to the first diode and the second diode, respectively.
Preferably, the current push circuit includes a plurality of NPN transistors and a plurality of PNP transistors, and the number of the NPN transistors is plural.
Preferably, the current driving circuit employs discrete components.
Preferably, the transconductance conversion circuit further comprises a positive power supply, a negative power supply and a first capacitor.
The invention has the following beneficial effects:
1. the invention realizes the isolation of the input signal and the output signal through the isolation buffer circuit, so that the interference and the intermodulation distortion are not easy to generate between the input signal and the output signal, the load capacity of the signal distribution circuit is improved, and the disproportion of the voltage of the output signal caused by the pulling-down of the voltage of the input signal when the signal distribution circuit and the transconductance conversion circuit need higher input power is avoided.
2. The invention realizes that the voltage signal output by the buffer isolation circuit is proportionally distributed to the transconductance conversion circuit through the signal distribution circuit for matching the transconductance coefficient, so that the proportion of the input voltage signal value and the output current value is in a design range.
3. The invention realizes that voltage signals output by the signal distribution circuit are amplified into current signals in equal proportion through the transconductance conversion circuits, the number of the transconductance conversion circuits is multiple, the transconductance conversion circuits are in a parallel connection structure, the current signals output by the multiple groups of the transconductance conversion circuits after being connected in parallel are doubled, hundreds of amperes of heavy current can be output to a load, the frequency is within 0.3 percent when the frequency is from direct current to 40 kilohertz, and the precision is within 3 percent when the frequency is from 40 kilohertz to 200 kilohertz.
4. The invention comprises a high-frequency channel unit and a current pushing circuit, wherein the high-frequency linearity is improved through the high-frequency channel unit, the power on a single transistor is reduced through the current pushing circuit, the multi-transistor parallel connection mode is adopted, and the complementary symmetry mode is adopted, and the current output is improved through the multi-transistor parallel connection mode.
5. The current driving circuit adopts discrete components, which are more beneficial to heat dissipation and uniform heat dissipation on one hand, and can obtain wider frequency band on the other hand.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
FIG. 1 is a schematic flow diagram of a transconductance amplifier;
FIG. 2 is a schematic diagram of a buffer isolation circuit;
fig. 3 is a schematic structural view of a signal distributing unit;
fig. 4 is a schematic diagram of a transconductance conversion circuit.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The present embodiment includes a transconductance amplifier, as shown in fig. 1, including a buffer isolation circuit for isolating an input signal and an output signal, where the input signal and the output signal are both voltage signals; the signal distribution circuit is used for matching the transconductance coefficient to evenly distribute the voltage signals output by the buffer isolation circuit; the transconductance conversion circuit is used for amplifying the voltage signals output by the signal distribution circuit into current signals in equal proportion; the buffer isolation circuit is connected with the signal distribution circuit, and the signal distribution circuit is connected with the transconductance conversion circuit.
As shown in fig. 2, the buffer isolation circuit includes a first operational amplifier AR1, the first operational amplifier AR1 includes a non-inverting input terminal for inputting a voltage signal, an inverting input terminal, and an output terminal connected to the inverting input terminal.
The isolation buffer circuit is a voltage follower constituted by the first operational amplifier AR1, and since the operational amplifier has an extremely high open-loop gain, the voltage follower constituted by the operational amplifier does not require peripheral components, and at the same time, is close to an ideal state in performance, and specifically, the voltage follower constituted by the first operational amplifier AR1 has an extremely high input impedance, draws little current from an input signal, that is, a voltage signal, and at the same time, has an extremely low output impedance, and causes little voltage drop inside when outputting current.
Therefore, the method can be used for isolating the input signal and the output signal, so that interference and intermodulation distortion are not easily generated between the input signal and the output signal, the load carrying capacity of the signal distribution circuit is improved, and the condition that the voltage of the output signal is not proportional due to the fact that the voltage of the input signal is reduced when the signal distribution circuit and the transconductance conversion circuit need high input power is avoided.
The signal distribution circuit comprises a plurality of groups of resistors and is used for proportionally distributing the voltage signals output by the buffer isolation circuit to the transconductance conversion circuit. Specifically, as shown in fig. 3, in this embodiment, the signal distribution unit includes four sets of resistors, a parallel structure is formed between the four sets of resistors, each set of resistors includes two resistors connected in series, and the two resistors connected in series form a series voltage divider circuit for matching a transconductance coefficient, so that a ratio of an input voltage signal value to an output current value is within a design range, where the transconductance coefficient is a ratio between a variation value of an output end current and a variation value of an input end voltage.
Specifically, taking two sets of resistors as an example, a twenty-first resistor R21 and a twenty-second resistor R22 are connected in series to form a first set of resistors, a twenty-third resistor R23 and a twenty-fourth resistor R24 are connected in series to form a second set of resistors, the first set of resistors and the second set of resistors are connected in parallel, and taking an input voltage of 5V as an example, after passing through a signal distribution circuit, an output voltage of each set is 0.5 times of the input voltage, namely 2.5V. The signal distribution circuit completely uses the resistor to carry out voltage division, so that the output signal of the isolation buffer circuit passes through the signal distribution circuit and is output to the transconductance conversion circuit in proportion.
As shown in fig. 4, the transconductance conversion circuit includes a second operational amplifier AR2 and a third operational amplifier AR3, the second operational amplifier AR2 is connected to the signal distribution circuit, and the third operational amplifier AR3 is connected to the second operational amplifier AR 2. And the voltage follower formed by the second operational amplifier AR2 is used for isolating the input signal from the output signal and improving the current output precision under different load conditions. Since the second operational amplifier AR2 is substantially similar to the first operational amplifier AR1, the description is simple, and the relevant points can be found in the partial description of the first operational amplifier AR 1.
The transconductance conversion circuit further comprises a high-frequency channel unit and a current pushing circuit, and the high-frequency channel unit is connected with the current pushing circuit. Since the third operational amplifier AR3 cannot output a large current of hundreds of amperes, the current driving circuit is connected, and the third operational amplifier AR3 is connected with the current driving circuit.
The current pushing circuit comprises NPN transistors and PNP transistors, in order to reduce the power on a single transistor, a multi-transistor parallel connection mode is adopted, and meanwhile, a complementary symmetry mode is adopted, and the current output is improved through the multi-transistor parallel connection mode, so that the number of the NPN transistors is multiple, and the number of the PNP transistors is multiple. The current driving circuit adopts discrete components, which are more favorable for heat dissipation and uniform heat dissipation on one hand, and can obtain wider frequency band on the other hand. The high-frequency channel unit comprises a first diode D1, a second diode D2 and a resistor, wherein the resistor is respectively connected with the first diode D1 and the second diode D2, and the high-frequency channel unit is used for improving high-frequency linearity.
In this embodiment, the transconductance conversion circuit further includes a positive power supply VCC2, a negative power supply VEE2, a first capacitor C1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, an eleventh resistor R11, a twelfth resistor R12, a thirteenth resistor R13, a fourteenth resistor R14, a fifteenth resistor R15, a sixteenth resistor R16, a seventeenth resistor 17, an eighteenth resistor 18, a nineteenth resistor R19, and a twentieth resistor R20.
As a preferred embodiment, the number of NPN transistors is 5, and the number of PNP transistors is 5, specifically, the NPN transistors include a first transistor Q1, a second transistor Q2, a third transistor Q3, a fourth transistor Q4, and a fifth transistor Q5, and the PNP transistors include a sixth transistor Q6, a seventh transistor Q7, an eighth transistor Q8, a ninth transistor Q9, and a thirteenth diode Q10.
The base of the fourth triode Q4 is connected with the fourth resistor R4, the collector of the fourth triode Q4 is connected with the third resistor R3, the emitter of the fourth triode Q4 is connected with the base of the fifth triode Q5, the collector of the fifth triode Q5 is connected with the first resistor R1, the emitter of the fifth triode Q5 is connected with the base of the first triode Q1, the base of the second triode Q2 and the base of the third triode Q3, the collector of the first triode Q1, the collector of the second triode Q2 and the collector of the third triode Q3 are all connected with the positive power supply VCC2, and the emitter of the first triode Q1, the emitter of the second triode Q2 and the emitter of the third triode Q3 are all connected with the seventh resistor R7.
A base of the seventh transistor Q7 is connected to a seventeenth resistor R17, a collector of the seventh transistor Q7 is connected to an eighteenth resistor R18, an emitter of the seventh transistor Q7 is connected to a base of the sixth transistor Q6, a collector of the sixth transistor Q6 is connected to a nineteenth resistor R19, an emitter of the sixth transistor Q6 is connected to a base of the eighth transistor Q8, a base of the ninth transistor Q9 and a base of the thirteenth diode Q10, respectively, a collector of the eighth transistor Q8, a collector of the ninth transistor Q9 and a collector of the thirteenth diode Q10 are connected to a negative power source VEE2, an emitter of the eighth transistor Q8, an emitter of the ninth Q9 and an emitter of the thirteenth Q10 are connected to a fourteenth resistor R14, an anode of the first diode D1 is connected to a positive power source 2, a cathode of the first diode D1 is connected to a twelfth resistor R12, the anode of the second diode D2 is connected to the fifteenth resistor R15, the cathode of the second diode D2 is connected to the negative power supply VEE2, and the first capacitor C1 is connected to the sixth resistor R6.
By changing the value of the eighth resistor R8, different coefficients of the voltage conversion current, i.e., transconductance coefficients, can be obtained. As shown in fig. 1, the number of the transconductance conversion circuits is multiple, a parallel structure is formed between the transconductance conversion circuits, the transconductance conversion circuits are used for amplifying voltage signals output by the signal distribution circuit into current signals in equal proportion, the current signals output by the multiple groups of transconductance conversion circuits after being connected in parallel are doubled, a large current of hundreds of amperes can be output to a load, and when the frequency is from direct current to 40 kilohertz, the precision is within 0.3%, and when the frequency is from 40 kilohertz to 200 kilohertz, the precision is within 3%.
It should be noted that:
reference in the specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. Thus, the appearances of the phrase "one embodiment" or "an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
In addition, it should be noted that the specific embodiments described in the present specification may differ in the shape of the components, the names of the components, and the like. All equivalent or simple changes of the structure, the characteristics and the principle of the invention which are described in the patent conception of the invention are included in the protection scope of the patent of the invention. Various modifications, additions and substitutions for the specific embodiments described may be made by those skilled in the art without departing from the scope of the invention as defined in the accompanying claims.
Claims (10)
1. A transconductance amplifier, comprising:
the buffer isolation circuit is used for isolating an input signal and an output signal, wherein the input signal and the output signal are both voltage signals;
the signal distribution circuit is used for matching the transconductance coefficient to evenly distribute the voltage signals output by the buffer isolation circuit;
the transconductance conversion circuit is used for amplifying the voltage signals output by the signal distribution circuit into current signals in equal proportion;
the buffer isolation circuit is connected with the signal distribution circuit, and the signal distribution circuit is connected with the transconductance conversion circuit.
2. A transconductance amplifier as claimed in claim 1, wherein said buffer isolation circuit comprises a first operational amplifier, said first operational amplifier comprising a non-inverting input for inputting said voltage signal, an inverting input and an output, said output being connected to said inverting input.
3. A transconductance amplifier as claimed in claim 1, characterized in that said signal distribution circuit comprises a plurality of sets of resistors.
4. A transconductance amplifier as claimed in claim 1, characterized in that said transconductance transforming circuits are in a plurality of groups, and said transconductance transforming circuits are connected in parallel.
5. A transconductance amplifier as claimed in claim 1, wherein said transconductance transforming circuit includes a second operational amplifier and a third operational amplifier, said second operational amplifier being connected to said signal splitting circuit, said third operational amplifier being connected to said second operational amplifier.
6. A transconductance amplifier as claimed in claim 1, characterized in that said transconductance transforming circuit further comprises a high frequency channel unit and a current boosting circuit, said high frequency channel unit and said current boosting circuit being connected.
7. A transconductance amplifier as claimed in claim 6, characterized in that said high-frequency channel unit comprises a first diode, a second diode and a resistor, said resistor being connected to said first diode and said second diode, respectively.
8. A transconductance amplifier as claimed in claim 6, wherein said current driving circuit includes a plurality of NPN transistors and a plurality of PNP transistors.
9. A transconductance amplifier as claimed in claim 6, characterized in that said current driving circuit employs discrete components.
10. A transconductance amplifier as claimed in claim 1, characterized in that said transconductance transforming circuit further comprises a positive supply, a negative supply and a first capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110776033.5A CN113285678A (en) | 2021-07-08 | 2021-07-08 | Transconductance amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110776033.5A CN113285678A (en) | 2021-07-08 | 2021-07-08 | Transconductance amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113285678A true CN113285678A (en) | 2021-08-20 |
Family
ID=77286565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110776033.5A Pending CN113285678A (en) | 2021-07-08 | 2021-07-08 | Transconductance amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113285678A (en) |
-
2021
- 2021-07-08 CN CN202110776033.5A patent/CN113285678A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Ulusoy et al. | A SiGe D-band low-noise amplifier utilizing gain-boosting technique | |
| CN106330107B (en) | Low noise amplifier circuit | |
| WO2004049556A2 (en) | Direct coupled distributed amplifier | |
| WO2023040474A1 (en) | Radio frequency power amplifier | |
| CN215990714U (en) | Radio frequency power amplifier and radio frequency front end architecture applied to 5G communication system | |
| CN104617905B (en) | Radio frequency amplifier and radio frequency amplification method | |
| WO2023061089A1 (en) | Radio frequency power amplifier applied to 5g-sub6g frequency band communication system | |
| US11848650B2 (en) | Differential power amplifier | |
| CN114679140B (en) | High linearity radio frequency power amplifier | |
| CN112653402A (en) | Low-voltage medium-power radio frequency amplifier based on silicon-based BJT (bipolar junction transistor) process | |
| CN113114164A (en) | Impedance transformation network circuit structure | |
| CN103856172A (en) | Electronic system, radio frequency power amplifier and temperature compensation method of amplifier | |
| CN217063683U (en) | Transconductance amplifier | |
| CN113285678A (en) | Transconductance amplifier | |
| CN111193477A (en) | Composite amplifier | |
| WO2023065843A1 (en) | Transformer matching-based three-power synthesis radio frequency power amplifier | |
| WO2003098795A1 (en) | Rf power amplifier | |
| GB1516190A (en) | Wideband transistor amplifier | |
| CN214851165U (en) | Impedance transformation network circuit structure | |
| CN113346848A (en) | HBT (heterojunction bipolar transistor) process-based high-three-order intermodulation point medium-power radio-frequency amplification circuit | |
| CN213990615U (en) | Power amplification module and circuit | |
| KR100645012B1 (en) | Differential amplifier | |
| CN211046877U (en) | High-power cascode broadband amplifier | |
| WO2003107529A2 (en) | High voltage-wide band amplifier | |
| CN218217310U (en) | Input matching circuit and radio frequency circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |