CN113270560A

CN113270560A - Display panel, preparation method thereof and display device

Info

Publication number: CN113270560A
Application number: CN202110545462.1A
Authority: CN
Inventors: 周炟; 张陶然; 刘传奇; 李云彬; 金凤阳
Original assignee: BOE Technology Group Co Ltd; Chengdu BOE Optoelectronics Technology Co Ltd
Current assignee: BOE Technology Group Co Ltd; Chengdu BOE Optoelectronics Technology Co Ltd
Priority date: 2021-05-19
Filing date: 2021-05-19
Publication date: 2021-08-17
Anticipated expiration: 2041-05-19
Also published as: CN113270560B

Abstract

The application discloses a display panel, a preparation method thereof and a display device, and relates to the technical field of display. The inorganic material layer in the display panel covers the binding region of the flexible substrate, so that when the display panel is prepared, the inorganic material layer can block gas generated by the flexible substrate, the gas is prevented from diffusing between the first protection film and the organic material layer, the first protection film can be prevented from generating bubbles, and the yield of the display panel is high.

Description

Display panel, preparation method thereof and display device

Technical Field

The application relates to the technical field of display, in particular to a display panel, a preparation method of the display panel and a display device.

Background

Flexible display panels have been widely used because they are bendable. When a flexible display panel is manufactured, a flexible substrate of the flexible display panel, a film layer in a pixel, and a protective film need to be formed on a substrate. And then peeling the flexible display panel from the substrate.

However, bubbles are generated on the protective film of the flexible display panel prepared by the above preparation method, and the yield of the flexible display panel is low.

Disclosure of Invention

The application provides a display panel, a preparation method thereof and a display device, which can solve the problem that the yield of a flexible display panel in the related art is low. The technical scheme is as follows:

in one aspect, there is provided a display panel including:

a flexible substrate having a display area and a binding area at one side of the display area, the binding area having a target boundary extending in a first direction, the display area extending in a second direction near the boundary of the binding area, the first direction intersecting the second direction;

the inorganic material layer is positioned on one side of the flexible substrate, the inorganic material layer covers the binding region, and the thickness of the part, close to the target boundary, of the inorganic material layer is smaller than that of the part, far away from the target boundary, of the inorganic material layer;

the organic material layer is positioned on one side, away from the flexible substrate, of the inorganic material layer;

and a first protective film positioned on one side of the organic material layer away from the flexible substrate.

Optionally, a thickness of a portion of the inorganic material layer near the target boundary is 1500 to 8000 angstroms.

Optionally, a thickness of a portion of the inorganic material layer near the target boundary is 2000 angstroms.

In another aspect, a method for manufacturing a display panel is provided, the method including:

forming a flexible substrate on one side of a substrate, wherein the flexible substrate is provided with a display area and a binding area positioned on one side of the display area, the binding area comprises a cutting area and a non-cutting area, and the cutting area is close to the edge of the flexible substrate relative to the non-cutting area;

forming an inorganic material layer covering the binding region on one side of the flexible substrate far away from the substrate, wherein the thickness of the part of the inorganic material layer positioned in the cutting region is smaller than that of the part positioned in the non-cutting region;

sequentially forming an organic material layer and a first protective film on one side, far away from the flexible substrate, of the inorganic material layer;

peeling the flexible substrate from the substrate base plate;

cutting the flexible substrate, the inorganic material layer, the organic material layer, and the first protective film along a cutting line within the cutting region, wherein the cutting line extends in a first direction, the display region extends in a second direction near a boundary of the binding region, and the first direction intersects the second direction.

Optionally, forming an inorganic material layer covering the binding region on a side of the flexible substrate away from the substrate base plate, including:

forming an inorganic material film covering the binding region on one side of the flexible substrate far away from the substrate base plate;

and etching the part of the inorganic material film, which is positioned in the cutting area, so as to obtain the inorganic material layer.

Optionally, the flexible substrate further has a bending region located between the display region and the binding region; the etching the part, located in the cutting area, of the inorganic material film to obtain the inorganic material layer includes:

and etching the part of the inorganic material film, which is positioned in the bending area, and the part of the inorganic material film, which is positioned in the cutting area, so as to obtain the inorganic material layer.

Optionally, the etching a portion of the inorganic material film located in the bending region and a portion of the cutting region to obtain the inorganic material layer includes:

sequentially etching the inorganic material film by adopting a first etching process and a second etching process to obtain the inorganic material layer;

and at least one of the first etching process and the second etching process is used for etching the part, located in the cutting area, of the inorganic material film.

Optionally, the etching the inorganic material film by sequentially adopting a first etching process and a second etching process to obtain the inorganic material layer includes:

exposing the inorganic material film by adopting a first mask plate, wherein the first mask plate is provided with a first mask area and a second mask area which have different light transmittance;

etching a region, corresponding to the first mask region, in the exposed inorganic material film by adopting a first etching process to obtain an initial inorganic material layer, wherein the etching thickness of the first etching process is a first thickness;

exposing the initial inorganic material layer by using a second mask plate, wherein the second mask plate is provided with a third mask area and a fourth mask area which have different light transmittance;

etching a region corresponding to the third mask region in the exposed initial inorganic material layer by adopting a second etching process to obtain the inorganic material layer, wherein the etching thickness of the second etching process is a second thickness;

wherein an orthographic projection of the first mask region on the flexible substrate does not overlap the cut region and overlaps the bend region; an orthographic projection of the third mask region on the flexible substrate overlaps the cut region and overlaps the bend region; the second thickness is less than the thickness of the inorganic material film, and the sum of the first thickness and the second thickness is greater than or equal to the thickness of the inorganic material film.

exposing the inorganic material film by adopting a third mask plate, wherein the third mask plate is provided with a fifth mask area and a sixth mask area which have different light transmittance;

etching a region, corresponding to the fifth mask region, in the exposed inorganic material film by adopting a first etching process to obtain an initial inorganic material layer, wherein the etching thickness of the first etching process is a first thickness;

exposing the initial inorganic material layer by using a fourth mask plate, wherein the second mask plate is provided with a seventh mask area and an eighth mask area which are different in light transmittance;

etching a region corresponding to the seventh mask region in the exposed initial inorganic material layer by adopting a second etching process to obtain the inorganic material layer, wherein the etching thickness of the second etching process is a second thickness;

wherein an orthographic projection of the fifth mask region on the flexible substrate overlaps the cut region and overlaps the bend region; an orthographic projection of the seventh mask region on the flexible substrate overlaps the cut region and overlaps the bend region; the sum of the first thickness and the second thickness is smaller than the thickness of the inorganic material film.

Optionally, the etching a portion of the inorganic material thin film located in the target region to obtain the inorganic material layer includes:

exposing the inorganic material film by adopting a fifth mask plate, wherein the fifth mask plate is provided with a ninth mask area and a tenth mask area which have different light transmittance;

etching a region, corresponding to the ninth mask region, in the exposed inorganic material film by adopting a third etching process to obtain the inorganic material layer, wherein the etching thickness of the third etching process is a third thickness;

wherein an orthographic projection of the ninth mask region on the flexible substrate overlaps the cut region and overlaps the bend region; the third thickness is less than the thickness of the inorganic material film.

Optionally, the thickness of the portion of the inorganic material layer located in the bending region is less than or equal to the thickness of the portion located in the cutting region.

Optionally, the thickness of the part of the inorganic material layer located in the cutting region is 1500 to 8000 angstroms.

Optionally, after the peeling the flexible substrate from the substrate base plate, the method further includes:

and forming a second protective film on one side of the flexible substrate far away from the inorganic material layer.

Optionally, the peeling the flexible substrate from the substrate base plate includes:

and peeling the flexible substrate from the substrate base plate by adopting a laser peeling process.

In still another aspect, there is provided a display device including: a power supply assembly and a display panel as described in the above aspects;

the power supply assembly is used for supplying power to the display panel.

The beneficial effect that technical scheme that this application provided brought includes at least:

the application provides a display panel, a preparation method thereof and a display device, wherein an inorganic material layer in the display panel covers a binding region of a flexible substrate, so that when the display panel is prepared, the inorganic material layer can block gas generated by the flexible substrate, the gas is prevented from diffusing between a first protection film and an organic material layer, the first protection film can be prevented from generating bubbles, and the yield of the display panel is high.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present disclosure;

FIG. 2 is a top view of a flexible substrate provided by an embodiment of the present application;

FIG. 3 is a schematic diagram of a display panel with a thickness of 0 angstroms for a portion of an inorganic material layer near a target boundary according to an embodiment of the present disclosure;

FIG. 4 is a schematic diagram of a 1500 angstroms thick display panel with a portion of inorganic material layer near the target boundary according to an embodiment of the present disclosure;

FIG. 5 is a schematic diagram of a display panel with an inorganic material layer having a thickness of 8000 angstroms near a target boundary according to an embodiment of the present disclosure;

fig. 6 is a schematic cross-sectional view of an inorganic material layer of a display panel provided in an embodiment of the present application, taken along direction BB in fig. 2;

FIG. 7 is a schematic cross-sectional view of an inorganic material layer of another display panel provided in the embodiment of the present application, taken along direction BB in FIG. 2;

fig. 8 is a schematic structural diagram of another display panel provided in an embodiment of the present application;

fig. 9 is a schematic structural diagram of another display panel provided in an embodiment of the present application;

fig. 10 is a flowchart of a method for manufacturing a display panel according to an embodiment of the present disclosure;

FIG. 11 is a top view of a flexible substrate prior to cutting as provided by an embodiment of the present application;

FIG. 12 is a schematic diagram of a flexible substrate being peeled from a base substrate according to an embodiment of the present disclosure;

fig. 13 is a flowchart of another method for manufacturing a display panel according to an embodiment of the present disclosure;

FIG. 14 is a flow chart of forming an inorganic material layer according to an embodiment of the present disclosure;

fig. 15 is a schematic view of a first mask provided in an embodiment of the present application;

fig. 16 is a schematic view of a second mask provided in the embodiment of the present application;

fig. 17 is a flow chart of another process for forming an inorganic material layer provided in an embodiment of the present application;

fig. 18 is a schematic view of a third mask provided in the embodiment of the present application;

fig. 19 is a schematic view of a fourth mask provided in an embodiment of the present application;

FIG. 20 is a flow chart of another process for forming an inorganic material layer according to an embodiment of the present disclosure;

fig. 21 is a schematic view of a fifth mask provided in an embodiment of the present application;

fig. 22 is a schematic structural diagram of a display device according to an embodiment of the present application.

Detailed Description

To make the objects, technical solutions and advantages of the present application more clear, embodiments of the present application will be described in further detail below with reference to the accompanying drawings.

A laser lift-off (LLO) process is a key process for peeling the flexible display panel from the substrate base plate to obtain the flexible display panel. In the process of peeling the flexible display panel from the substrate by using the laser peeling process, the flexible substrate in the flexible display panel generates gas to form impact between the flexible substrate and the substrate, so that the flexible substrate and the substrate are separated.

However, in the area of the flexible display panel where the film layer is weak and the effect of blocking gas is poor, the gas generated by the flexible substrate can pass through the film layer on the flexible substrate where the film layer is weak and the effect of blocking gas is poor, and enter between the protective film on the side of the film layer away from the flexible substrate and the film layer, so that the protective film forms bubbles, which affects the yield of the flexible display panel.

Wherein, in the process of forming the flexible display panel, the boundary of the flexible display panel is formed by cutting after forming other film layers of the flexible display panel on the flexible substrate. Since the inorganic material layer is likely to cause cracks in the flexible display panel during cutting, referring to fig. 1, in order to facilitate cutting, only the organic material layer is disposed in a cutting region where a cut line (cut line) is located in the flexible display panel. The film layer of the organic material layer is weak and the gas barrier effect is poor, so that in the cutting area, gas generated by the flexible substrate can pass through the organic material layer and enter between the protection film on the side, away from the flexible substrate, of the organic material layer and the organic material layer, and the protection film forms bubbles in the cutting area.

Since the cutting region is closer to the bending region of the flexible substrate, the bubbles in the cutting region may cause the flexible display panel to generate a crack (crack) in the bending region. The bending crack may cause corrosion of the metal trace in the bending region, and further cause black spots on the boundary of the metal trace. The gradual increase of the black spot (GDS) may cause the flexible display panel to fail, and affect the display effect of the flexible display panel.

The embodiment of the application provides a display panel, which can solve the problem that the yield of a flexible display panel in the related art is low. Referring to fig. 1, the display panel 10 may include: a flexible substrate 101, an inorganic material layer 102, an organic material layer 103, and a first protective film 104. The display panel 10 may be a flexible display panel.

Fig. 2 is a top view of a flexible substrate provided in an embodiment of the present application. Referring to fig. 2, the flexible substrate 101 may have a display region 101a and a binding region 101b located at one side of the display region 101 a. The bound region 101b has an object boundary 101b1 extending along the first direction X. The display area 101a extends in the second direction Y near the boundary of the binding area 101b, and the first direction X intersects the second direction Y. For example, the first direction X is perpendicular to the second direction Y. Referring to fig. 1 and 2, fig. 1 may be a cross-sectional view of the display panel along the direction AA in fig. 2.

Referring to fig. 1 and 2, the inorganic material layer 102 is disposed on a side of the flexible substrate 101, the organic material layer 103 is disposed on a side of the inorganic material layer 102 away from the flexible substrate 101, and the first protective film 104 is disposed on a side of the organic material layer 103 away from the flexible substrate 101. That is, the inorganic material layer 102, the organic material layer 103, and the first protective film 104 are sequentially stacked in a direction away from the flexible substrate 101.

Wherein the inorganic material layer 102 covers the binding region 101 b. The organic material layer 103 and the first protective film 104 both cover the binding region 101 b. The thickness h1 of the portion of the inorganic material layer 102 near the target boundary 101b1 is less than the thickness h2 of the portion away from the target boundary 101b 1.

Since the inorganic material layer 102 has a good gas blocking effect with respect to the organic material layer 103, the inorganic material layer 102 covers the binding region 101b, so that when the display panel 10 is manufactured, the inorganic material layer 102 can block gas generated by the flexible substrate 101, and prevent the gas from diffusing between the first protection film 104 and the organic material layer 103, thereby preventing the first protection film 104 from generating bubbles, and the yield of the display panel 10 is high.

Moreover, since the target boundary 101b1 is formed by cutting, in order to avoid a large influence of the part of the inorganic material layer 102 close to the target boundary 101b1 on the cutting process, the thickness of the part of the inorganic material layer 102 close to the target boundary 101b1 is smaller than that of the part far from the target boundary 101b1, so that the probability of generating cracks in the display panel 10 is reduced, and the display effect of the display panel 10 is ensured.

To sum up, the embodiment of the present application provides a display panel, wherein an inorganic material layer in the display panel covers a binding region of a flexible substrate, so that when the display panel is manufactured, the inorganic material layer can block gas generated by the flexible substrate, and prevent the gas from diffusing between a first protection film and an organic material layer, so as to prevent the first protection film from generating bubbles, and the yield of the display panel is high.

As can be seen from fig. 1, the organic material layer 103 in the display panel 10 may include a Planarization Layer (PLN) 1031 and a Pixel Definition Layer (PDL) 1032.

Fig. 3 is a schematic diagram of a display panel with a thickness of 0 a at a portion of an inorganic material layer near a target boundary according to an embodiment of the present application. Fig. 4 is a schematic diagram of a 1500 angstrom thick display panel of a portion of an inorganic material layer near a target boundary according to an embodiment of the present disclosure. Fig. 5 is a schematic diagram of a display panel with a thickness of 8000 a at a portion of an inorganic material layer close to a target boundary according to an embodiment of the present disclosure.

Experimental verification was performed on the display panels shown in fig. 3 to 5, and the experimental verification results showed that the probability of generating bubbles was 1.4% in the display panel shown in fig. 3, 0.2% in the display panel shown in fig. 4, and 0% in the display panel shown in fig. 5.

From the experimental verification results, it is understood that the probability of the display panel generating bubbles is inversely related to the thickness h1 of the portion of the inorganic material layer 102 in the display panel near the target boundary 101b 1. That is, the thicker the thickness h1 of the portion of the inorganic material layer 102 in the display panel 10 near the target boundary 101b1, the smaller the probability that the display panel 10 generates bubbles; the thinner the thickness h1 of the portion of the inorganic material layer 102 in the display panel 10 near the target boundary 101b1, the greater the probability that bubbles will be generated by the display panel 10.

In the embodiment of the present application, in order to reduce the probability of bubbles being generated in the display panel 10 while avoiding the large influence on the cutting process caused by the portion of the inorganic material layer 102 close to the target boundary 101b1, the thickness of the portion of the inorganic material layer 102 close to the target boundary 101b1 may be 1500 angstroms (a) to 8000 angstroms. For example, the thickness of the portion of the inorganic material layer 102 near the target boundary 101b1 may be 2000 angstroms, 4000 angstroms, 5000 angstroms, 6000 angstroms, or the like.

Here, although bubbles may be generated in the display panel 10 when the thickness of the portion of the inorganic material layer 102 near the target boundary 101b1 is 1500 angstroms, the probability (0.2%) is already small, and when the manufacturing accuracy of the display panel is not high, the thickness of the portion of the inorganic material layer 102 near the target boundary 101b1 may be 1500 angstroms.

As can also be seen with reference to fig. 2, the flexible substrate 101 may further include a bending region 101c between the display region 101a and the binding region 101 b. The display panel may bend the binding region 101b to the back side along the bending region 101c to reduce the width of the bezel of the display panel.

In addition, since the inorganic material layer 102 is likely to have a crack during bending, the thickness of the inorganic material layer 102 of the display panel 10 at the bending region 101c can be reduced. For example, the thickness of the inorganic material layer 102 of the display panel 10 in the portion located in the bending region 101c is 0. Or the thickness of the portion of the inorganic material layer 102 of the display panel 10 located in the bending region 101c is smaller than the thickness h1 of the portion close to the target boundary 101b 1.

Fig. 6 is a schematic cross-sectional view of an inorganic material layer of a display panel provided in an embodiment of the present application, taken along direction BB in fig. 2. As can be seen with reference to fig. 6, the flexible substrate 101 of the display panel 10 includes: a first substrate 1011 and a second substrate 1012. The display panel 10 may further include: a first barrier layer 105 positioned between the first substrate 1011 and the second substrate 1012. The inorganic material layer 102 of the display panel 10 may include: a second barrier layer (barrier)1021, a first buffer layer (buffer)1022, a second buffer layer 1023, a first Gate Insulator (GI) 1024, a second gate insulator 1025, a first interlayer dielectric (ILD) 1026, and a second interlayer dielectric 1027, which are sequentially stacked in a direction of the second substrate 1012 away from the first substrate 1011. Here, the organic material layer 103 and the first protective film 104 are not shown in fig. 6.

Alternatively, the material of the first substrate 1011 and the second substrate 1012 may be Polyimide (PI). The material of the first barrier layer 105 may include at least one of silicon oxide (SiOx) and amorphous silicon (a-Si). The materials of the second barrier layer 1021, the second buffer layer 1023, the first gate insulating layer 1024, and the first interlayer dielectric layer 1026 are silicon oxide. The first buffer layer 1022, the second gate insulating layer 1025, and the second interlayer dielectric layer 1027 are all made of silicon nitride (SiNx). Of course, the material of the film layer may also be other materials, which is not limited in this application.

Optionally, the first substrate 1011 of the flexible substrate 101 has a thickness of 85000 angstroms and the second substrate 1012 has a thickness of 85000 angstroms. The first barrier layer 105 has a thickness of 6000 angstroms and the second barrier layer 1021 has a thickness of 5500 angstroms. The material of the first buffer layer 1022 is 1000 angstroms, and the thickness of the second buffer layer 1023 is 3000 angstroms. The thickness of the first gate insulating layer 1024 is 1200 angstroms, and the thickness of the second gate insulating layer 1025 is 1300 angstroms. The thickness of the first interlayer dielectric 1026 is 2000 angstroms, and the thickness of the second interlayer dielectric 1027 is 3000 angstroms. In this case, the total thickness H of the inorganic material layer 102 may be 5500 angstroms +1000 angstroms +3000 angstroms +1200 angstroms +1300 angstroms +2000 angstroms +3000 angstroms which is 17000 angstroms. Of course, the thickness of the film layer may also be other thicknesses, which is not limited in this application.

Referring to fig. 6, the thickness of the inorganic material layer 102 at the bending region 101c may be 0. Alternatively, referring to fig. 7, the thickness of the portion of the inorganic material layer 102 located in the bending region 101c may be greater than 0.

In the embodiment of the present application, the portion of the inorganic material layer 102 located in the bending region 101c may be etched during the manufacturing process. For example, the portion of inflection region 101c in fig. 6 and 7 may be etched using two etching processes. Alternatively, a single etching process may be used to etch the portion of the inorganic material layer 102 located in the bending region 101 c. Alternatively, three or more etching processes may be used to etch the portion of the inorganic material layer 102 in the bending region 101 c. The embodiment of the present application does not limit this.

If two etching processes are used for etching, the first etching process may be referred to as edge one-step etching plus interlayer dielectric Etching (EBI), and the second etching process may be referred to as edge two-step Etching (EBB).

For example, assuming that the total thickness of the inorganic material layer 102 is 14000 angstroms, and the etching thickness of the first etching process and the etching thickness of the second etching process are both 7000 angstroms, the thickness of the portion of the inorganic material layer 102 of the display panel located in the bending region 101c is 0. Of course, the etching thickness of the first etching process and the etching thickness of the second etching process may also be different, which is not limited in this application.

Wherein, the etching thickness of each etching process can be controlled by adjusting the etching time. The etching thickness is positively correlated with the etching time, and the longer the etching time is, the thicker the etching thickness is, the shorter the etching time is, and the thinner the etching thickness is.

Fig. 8 is a schematic structural diagram of another display panel provided in the embodiment of the present application. As can be seen with reference to fig. 8, the display panel 10 may further include: and the second protective film 106 is positioned on one side of the flexible substrate 101 away from the inorganic material layer 102. The second protection film 106 corresponds to the first protection film 104, and is used for protecting the film layer between the first protection film 104 and the second protection film 106, avoiding damage to the film layer, and ensuring the quality of the flexible display panel 10.

Fig. 9 is a schematic structural diagram of another display panel provided in the embodiment of the present application. Referring to fig. 9, the display panel 10 may further include: another inorganic material layer 107 between the organic material layer 103 and the first protective film 104, and another organic material layer 108 between the another inorganic material layer 107 and the first protective film 104. The another inorganic material layer 107 may be an inorganic material layer in a touch structure of the display panel 10, and the another organic material layer 108 may be an organic material layer in the touch structure.

Fig. 10 is a flowchart of a method for manufacturing a display panel according to an embodiment of the present disclosure. The method can be used for preparing the display panel provided by the embodiment. As can be seen with reference to fig. 10, the method may include:

step 201, forming a flexible substrate on one side of a substrate base plate.

In the embodiment of the present application, when the display panel 10 is manufactured, a substrate may be obtained first, and then the flexible substrate 101 may be formed on one side of the substrate. Wherein the material of the substrate base plate can be a rigid material. For example, the base substrate may be a glass (glass) substrate. The material of the flexible substrate 101 may be a flexible material, for example, PI.

FIG. 11 is a top view of a flexible substrate prior to cutting as provided by an embodiment of the present application. Referring to fig. 11, the flexible substrate 101 before cutting has a display region 101a and a binding region 101b located at one side of the display region 101 a. The binding region 101b may include a cutting region b1 and a non-cutting region b 2. The cut region b1 is near the edge of the flexible substrate 101 relative to the non-cut region b 2. Therein, two cut regions b1 and a non-cut region b2 located between the two cut regions b1 are shown in fig. 11.

Step 202, forming an inorganic material layer covering the binding region on one side of the flexible substrate far away from the substrate base plate.

In the embodiment of the present application, after the flexible base 101 is formed on one side of the substrate, the inorganic material layer 102 may be formed on one side of the flexible base 101 away from the substrate. The inorganic material layer 102 may cover the bonding region 101b, and a thickness h1 of a portion of the inorganic material layer 102 located in the cutting region b1 is less than a thickness h2 of a portion located in the non-cutting region b 2.

Step 203, forming an organic material layer and a first protective film in sequence on the side of the inorganic material layer far away from the flexible substrate.

In the embodiment of the present application, after the inorganic material layer 102 is formed on the side of the flexible base 101 away from the substrate, the organic material layer 103 and the first protective film 104 may be sequentially formed on the side of the inorganic material layer 102 away from the flexible base 101. The first protective film 104 may be used to protect the inorganic material layer 102 and the organic material layer 103 formed on the flexible substrate 101.

And step 204, peeling the flexible base from the substrate base plate.

Fig. 12 is a schematic diagram after the flexible base is peeled off from the base substrate according to the embodiment of the present application. Referring to fig. 12, the inorganic material layer 102 may cover the binding region 101b, and a thickness h1 of a portion of the inorganic material layer 102 located at the cutting region b1 is less than a thickness h2 of a portion located at the non-cutting region b 2.

Since the inorganic material layer 102 formed on the flexible substrate 101 has a good gas-blocking effect with respect to the organic material layer 103, the inorganic material layer 102 covers the binding region 101b, so that when the flexible substrate 101 is peeled off from the substrate, the inorganic material layer 102 can block the gas generated by the flexible substrate 101, and prevent the gas from diffusing between the first protection film 104 and the organic material layer 103, thereby preventing the first protection film 104 from generating bubbles and improving the yield of the display panel.

Step 205, cutting the flexible substrate, the inorganic material layer, the organic material layer and the first protective film along the cutting lines in the cutting region.

After the flexible base 101 is peeled off from the base substrate, the flexible base 101, and the inorganic material layer 102, the organic material layer 103, and the first protective film 104 formed on one side of the flexible base 101 may be integrated. Thereby, the flexible substrate 101, the inorganic material layer 102, the organic material layer 103, and the first protective film 104 may be cut along the cutting line b11 within the cutting region b 1.

Alternatively, the cutting line b11 extends in the first direction X, and the display area 101a extends in the second direction Y near the boundary of the binding area 101 b. The first direction X intersects the second direction Y. Illustratively, the first direction X is perpendicular to the second direction Y.

In the embodiment of the present application, in conjunction with fig. 2 and 11, after the cutting along the cutting line b11 is completed, the side of the cutting line b11 in the cutting region b1 away from the non-cutting region b2 may be cut away. Since the cut line b11 is located in the cut region b1, a part of the cut region b1 may be cut away and another part may be left.

For example, in fig. 11, the flexible substrate 101 has two cut regions b1, and the non-cut region b2 is located between the two cut regions b 1. After the cutting b11 is completed along the cutting line of each cutting region b1 of the two cutting regions b1, the upper left corner and the upper right corner of the flexible substrate 101 may be cut off.

In the embodiment of the present application, in order to avoid that the part of the inorganic material layer 102 located in the cutting region b1 has a great influence on the cutting process, the thickness of the part of the inorganic material layer 102 located in the cutting region b1 may be smaller than that of the part of the non-cutting region b2, so as to reduce the probability of generating cracks in the display panel 10 and ensure the display effect of the display panel 10.

In summary, the embodiment of the present application provides a method for manufacturing a display panel, in which an inorganic material layer in the display panel manufactured by the method covers a binding region of a flexible substrate, so that when the flexible substrate in the display panel is peeled off from a substrate, the inorganic material layer can block gas generated by the flexible substrate, and prevent the gas from diffusing between a first protection film and an organic material layer, so as to prevent the first protection film from generating bubbles, and the yield of the display panel is high.

Fig. 13 is a flowchart of another method for manufacturing a display panel according to an embodiment of the present disclosure. The method may be used to prepare the display panel 10 provided in the above embodiments. Referring to fig. 13, the method may include:

step 301, forming a flexible substrate on one side of a substrate base plate.

In the embodiment of the present application, when the display panel 10 is manufactured, a substrate may be obtained first, and then the flexible substrate 101 may be formed on one side of the substrate. Wherein the material of the substrate base plate can be a rigid material. For example, the base substrate may be a glass substrate. The material of the flexible substrate 101 may be a flexible material, for example, PI.

Referring to fig. 11, the flexible substrate before cutting has a display region 101a, a binding region 101b located at one side of the display region 101a, and a bending region 101c located between the display region 101a and the binding region 101 b. The bonded region 101b includes a cut region b1 and a non-cut region b2, and the cut region b1 is adjacent to the edge of the flexible substrate 101 relative to the non-cut region b 2.

And 302, forming an inorganic material film covering the binding region on one side of the flexible substrate far away from the substrate.

In the embodiment of the present application, after the flexible base 101 is formed on one side of the substrate, a thin film of an inorganic material may be formed on one side of the flexible base 101 away from the substrate. The inorganic material film may cover the bonding region 101b, and the inorganic material film may be located in the bending region 101c and the display region 101 a.

Step 303, etching the part of the inorganic material film, which is located in the bending area, and the part of the inorganic material film, which is located in the cutting area, to obtain an inorganic material layer.

In the present embodiment, the thickness of the inorganic material layer 102 in the portion of the cutting region b1 is less than the thickness of the portion in the non-cutting region b 2. The thickness of the inorganic material layer 102 in the bending region 101c is smaller than or equal to the thickness of the portion in the cutting region b 1.

Optionally, the thickness of the portion of the inorganic material layer 102 located in the non-cutting region b2 is 12000 angstroms to 17000 angstroms, for example 14000 angstroms. The thickness of the portion of the inorganic material layer 102 located at the cutting region b1 is 1500 angstroms to 8000 angstroms, such as 2000 angstroms, 4000 angstroms, 5000 angstroms, or 6000 angstroms.

In this embodiment, the inorganic material film may be etched by sequentially using a first etching process and a second etching process to obtain the inorganic material layer 102, and at least one of the first etching process and the second etching process may be used to etch a portion of the inorganic material film located in the cutting region b 1. That is, the inorganic material film may be etched using two etching processes to obtain the inorganic material layer 102.

As an alternative implementation, referring to fig. 14, obtaining the inorganic material layer 102 by using a two-time etching process includes the following steps:

3031a, exposing the inorganic material film by adopting a first mask plate.

In this embodiment, before the first mask is used to expose the inorganic material thin film, a photoresist may be coated on a side of the inorganic material thin film away from the flexible substrate 101. And then, exposing the photoresist on the side, away from the flexible substrate 101, of the inorganic material film by using a first mask plate.

Referring to fig. 15, the first mask 401 has a first mask region 401a and a second mask region 401b having different transmittances. The orthographic projection of the first mask region 401a on the flexible substrate 101 does not overlap the cut region b1 and overlaps the bend region 101 c. The orthographic projection of this second mask region 401b on the flexible substrate 101 overlaps the non-cut region b2 and overlaps the cut region b 1. The first mask 401 of fig. 15 shows only masked regions corresponding to the binding region 101b and the bending region 101c, and does not show masked regions corresponding to the display region 101 a.

In the embodiment of the present application, if the photoresist coated on the side of the inorganic material film away from the flexible substrate 101 is a positive photoresist, the first mask region 401a of the first mask 401 may be an opening, and the second mask region 401b may be a region having a solid material. If the photoresist applied to the side of the inorganic material film away from the flexible substrate 101 is a negative photoresist, the first mask region 401a of the first mask may be a region having a solid material, and the second mask region 401b may be an opening.

3032a, etching the area corresponding to the first mask area in the exposed inorganic material film by adopting a first etching process to obtain an initial inorganic material layer.

In this embodiment of the application, after the photoresist on the side of the inorganic material film away from the flexible substrate 101 is exposed by using the first mask 401, the photoresist may be developed by using a developing solution. And then, etching the area, corresponding to the first mask area 401a, of the exposed inorganic material film by adopting a first etching process to obtain an initial inorganic material layer.

After the photoresist is developed, the portions of the photoresist corresponding to the first mask region 401a are dissolved in the developing solution, and the portions of the photoresist corresponding to the second mask region 401b are not dissolved in the developing solution. Thus, portions of the inorganic material film corresponding to the first mask region 401a can be etched, and portions of the regions corresponding to the second mask region 401b can remain. The etching thickness of the first etching process is the first thickness.

Since the orthographic projection of the first mask region 401a on the flexible substrate 101 does not overlap the cutting region b1 and overlaps the bending region 101c, after the etching of the first etching process is completed, the portion of the inorganic material film located in the cutting region b1 can remain and the portion located in the bending region 101c can be etched. That is, after the step 3032a is performed, the thickness of the portion of the initial inorganic material layer located in the binding region 101b (the cutting region b1 and the non-cutting region b2) is still the thickness of the inorganic material film, and the thickness of the portion of the initial inorganic material layer located in the bending region 101c is the difference between the thickness of the inorganic material film minus the first thickness.

3033a, exposing the initial inorganic material layer by using a second mask plate.

In the embodiment of the present application, before exposing the initial inorganic material layer by using the second mask 402, a photoresist may be coated on a side of the initial inorganic material layer away from the flexible substrate 101. And then, exposing the photoresist on the side of the initial inorganic material layer far away from the flexible substrate 101 by using a second mask 402.

Referring to fig. 16, the second mask 402 has third and

fourth mask regions

402a and 402b having different transmittances. The orthographic projection of this third mask region 402a on the flexible substrate 101 overlaps the cut region b1 and overlaps the bend region 101 c. The orthographic projection of this second mask region 401b on the flexible substrate 101 overlaps the non-cut region b 2. The second mask 402 in fig. 16 shows only mask regions corresponding to the binding region 101b and the bending region 101c, and does not show a mask region corresponding to the display region 101 a.

In the embodiment of the present application, if the photoresist applied on the side of the initial inorganic material layer away from the flexible substrate 101 is a positive photoresist, the third mask region 402a of the second mask 402 may be an opening, and the fourth mask region 402b may be a region having a solid material. If the photoresist applied on the side of the initial inorganic material layer away from the flexible substrate 101 is a negative photoresist, the third mask region 402a of the second mask 402 may be a region having a solid material, and the fourth mask region 402b may be an opening.

3034a, etching the region corresponding to the third mask region in the exposed initial inorganic material layer by adopting a second etching process to obtain the inorganic material layer.

In this embodiment of the application, after exposing the photoresist on the side of the initial inorganic material layer away from the flexible substrate 101 by using the second mask 402, the photoresist may be developed by using a developing solution. And then etching the region of the exposed initial inorganic material layer corresponding to the third mask region 402a by a second etching process. Finally, the photoresist is removed to obtain the inorganic material layer 102.

After the photoresist is developed, the portions of the photoresist corresponding to the third mask region 402a are dissolved in the developing solution, and the portions of the photoresist corresponding to the fourth mask region 402b are not dissolved in the developing solution. Thus, portions of the initial inorganic material layer corresponding to the third mask region 402a may be etched, and portions of the regions corresponding to the fourth mask region 402b may remain. The etching thickness of the second etching process is the second thickness.

Since the orthographic projection of the third mask region 402a on the flexible substrate 101 overlaps the cut region b1 and overlaps the bending region 101c, after the etching of the second etching process is completed, the portion of the initial inorganic material layer located in the cut region b1 and the portion located in the bending region 101c can be etched. That is, after step 3034a is performed, the thickness of the portion of the inorganic material layer 102 located in the cutting region b1 is the difference between the thickness of the inorganic material thin film minus the second thickness, and the thickness of the portion of the inorganic material layer 102 located in the bending region 101c is the difference between the thickness of the inorganic material thin film minus the first thickness minus the second thickness.

In this implementation, since the portion of the inorganic material thin film located in the cutting region b1 is etched once and the portion located in the bending region 101c is etched twice, the thickness of the portion of the inorganic material layer 102 located in the bending region 101c is smaller than the thickness of the portion located in the cutting region b 1.

For example, if the thickness of the inorganic material thin film is 14000 angstroms, the first thickness is 7000 angstroms, and the second thickness is 7000 angstroms, the thickness of the portion of the inorganic material layer 102 located in the bending region 101c is 14000 angstroms to 7000 angstroms to 0 angstroms, and the thickness of the portion located in the cutting region b1 is 14000 angstroms to 7000 angstroms.

As can be seen from fig. 15 and 16, the width d1 of the region of the first mask region 401a corresponding to the bending region 101c in the first mask 401 is greater than the width d1 of the region of the third mask region 403a corresponding to the bending region 101c in the second mask 402. Therefore, the area of the orthographic projection of the opening of the inorganic material layer 102 formed by the second etching process on the flexible substrate 101 can be smaller than the area of the orthographic projection of the opening of the inorganic material layer 102 formed by the first etching process on the flexible substrate 101 (for example, fig. 6 and 7). And the orthographic projection of the opening of the inorganic material layer 102 formed by the second etching process on the flexible substrate 101 is located in the orthographic projection of the opening of the inorganic material layer 102 formed by the first etching process on the flexible substrate 101.

Alternatively, as another alternative implementation, referring to fig. 17, obtaining the inorganic material layer 102 by using two etching processes includes the following steps:

3031b, exposing the inorganic material film by adopting a third mask plate.

In this embodiment, before the third mask is used to expose the inorganic material thin film, a photoresist may be coated on a side of the inorganic material thin film away from the flexible substrate 101. And then, exposing the photoresist on the side, away from the flexible substrate 101, of the inorganic material film by using a first mask plate.

Referring to fig. 18, the third mask 403 has fifth and

sixth mask regions

403a and 403b having different transmittances. An orthographic projection of the fifth mask region 403a on the flexible substrate 101 overlaps the cut region b1 and overlaps the bend region 101 c. The orthographic projection of this sixth mask region 403b on the flexible substrate 101 overlaps the non-cut region b 2. The third mask 403 in fig. 18 shows only masked regions corresponding to the binding region 101b and the bending region 101c, and does not show masked regions corresponding to the display region 101 a.

In the embodiment of the present application, if the photoresist coated on the side of the inorganic material film away from the flexible substrate 101 is a positive photoresist, the fifth mask region 403a of the third mask 403 may be an opening, and the sixth mask region 403b may be a region having a solid material. If the photoresist applied on the side of the inorganic material film away from the flexible substrate 101 is a negative photoresist, the fifth mask region 403a of the third mask 403 may be a region having a solid material, and the sixth mask region 403b may be an opening.

3032b, etching the region, corresponding to the fifth mask region, in the exposed inorganic material film by adopting a first etching process to obtain an initial inorganic material layer.

In this embodiment of the application, after the photoresist on the side of the inorganic material film away from the flexible substrate 101 is exposed by using the third mask, the photoresist may be developed by using a developing solution. And then etching the area, corresponding to the third mask area 402a, in the exposed inorganic material film by adopting a second etching process to obtain an initial inorganic material layer.

After the photoresist is developed, the portions of the photoresist corresponding to the third mask region 402a are dissolved in the developing solution, and the portions of the photoresist corresponding to the fourth mask region 402b are not dissolved in the developing solution. Thus, portions of the inorganic material film corresponding to the third mask region 402a may be etched, and portions of the regions corresponding to the fourth mask region 402b may remain. The etching thickness of the first etching process is a first thickness.

Since the orthographic projection of the first mask region 401a on the flexible substrate 101 overlaps the cutting region b1 and overlaps the bending region 101c, after the etching of the first etching process is completed, the portion of the inorganic material thin film located in the cutting region b1 and the portion located in the bending region 101c can be etched. That is, after the step 3032b is performed, the thickness of the portion of the initial inorganic material layer located in the non-cutting region b2 of the binding region 101b is still the thickness of the inorganic material film, and the thickness of the portion of the initial inorganic material layer located in the cutting region b1 of the binding region 101b and the thickness of the portion located in the bending region 101c are the difference of the thickness of the inorganic material film minus the first thickness.

3033b, exposing the initial inorganic material layer by adopting a fourth mask plate.

In the embodiment of the present application, before exposing the initial inorganic material layer by using the fourth mask 404, a photoresist may be coated on a side of the initial inorganic material layer away from the flexible substrate 101. Then, the fourth mask 404 is used to expose the photoresist on the side of the initial inorganic material layer away from the flexible substrate 101.

Referring to fig. 19, the fourth mask 404 has seventh and

eighth mask regions

404a and 404b having different transmittances. The orthographic projection of this seventh mask region 404a on the flexible substrate 101 overlaps the cut region b1 and overlaps the bend region 101 c. The orthographic projection of this eighth mask region 404b on the flexible substrate 101 overlaps the non-cut region b 2. The fourth mask 404 in fig. 19 shows only mask regions corresponding to the binding region 101b and the bending region 101c, and does not show mask regions corresponding to the display region 101 a.

In the embodiment of the present application, if the photoresist coated on the side of the initial inorganic material layer away from the flexible substrate 101 is a positive photoresist, the seventh mask region 404a of the fourth mask 404 may be an opening, and the eighth mask region 404b may be a region having a solid material. If the photoresist applied on the side of the initial inorganic material layer away from the flexible substrate 101 is a negative photoresist, the seventh mask region 404a of the fourth mask 404 may be a region having a solid material, and the eighth mask region 404b may be an opening.

3034b, etching the region corresponding to the seventh mask region in the exposed initial inorganic material layer by adopting a second etching process to obtain the inorganic material layer.

In this embodiment of the application, after the photoresist on the side of the initial inorganic material layer away from the flexible substrate 101 is exposed by using the fourth mask 404, the photoresist may be developed by using a developing solution. The exposed regions of the initial inorganic material layer corresponding to the seventh mask region 404a are then etched using a second etching process. Finally, the photoresist is removed to obtain the inorganic material layer 102.

After the photoresist is developed, the portions of the photoresist corresponding to the seventh mask region 404a are dissolved in the developing solution, and the portions of the photoresist corresponding to the eighth mask region 404b are not dissolved in the developing solution. Thus, portions of the initial inorganic material layer corresponding to the seventh mask region 404a may be etched, and portions of the regions corresponding to the eighth mask region 404b may remain. The etching thickness of the second etching process is the second thickness.

Since the orthographic projection of the seventh mask region 404a on the flexible substrate 101 overlaps the cutting region b1 and overlaps the bending region 101c, after the etching of the second etching process is completed, the portion of the initial inorganic material layer located in the cutting region b1 and the portion located in the bending region 101c can be etched. That is, after step 3034b is performed, the thickness of the portion of the inorganic material layer 102 located in the cutting region b1 and the thickness of the portion located in the bending region 101c are the difference between the inorganic material film minus the first thickness and minus the second thickness.

In this implementation, since the portions of the inorganic material layer 102 located in the cutting regions b1 and the portions located in the bending regions 101c are both etched twice, the thickness of the portions of the inorganic material layer 102 located in the bending regions 101c is formed to be equal to the thickness of the portions located in the cutting regions b 1. Further, in order to form the inorganic material layer 102 in which the portion located in the cutting region b1 has a certain thickness, the sum of the first thickness and the second thickness is smaller than the thickness of the inorganic material thin film.

For example, assuming that the thickness of the inorganic material thin film is 14000 angstroms, the first thickness is 7000 angstroms, and the second thickness is 5000 angstroms, the thickness of the portion of the inorganic material layer 102 located in the bending region 101c and the thickness of the portion located in the cutting region b1 are 14000 angstroms to 7000 angstroms to 5000 angstroms, which is 2000 angstroms.

As can be seen from fig. 18 and 19, the width d3 of the region of the fifth mask region 403a of the third mask 403 corresponding to the bending region 101c is greater than the width d4 of the region of the seventh mask region 404a of the fourth mask 404 corresponding to the bending region 101 c. Therefore, the area of the orthographic projection of the opening of the inorganic material layer 102 formed by the second etching process on the flexible substrate 101 can be smaller than the area of the orthographic projection of the opening of the inorganic material layer 102 formed by the first etching process on the flexible substrate 101 (for example, fig. 6 and 7). And the orthographic projection of the opening of the inorganic material layer 102 formed by the second etching process on the flexible substrate 101 is located in the orthographic projection of the opening of the inorganic material layer 102 formed by the first etching process on the flexible substrate 101.

In this embodiment, the third etching process may be used to etch the inorganic material film, so as to obtain the inorganic material layer 102. That is, the inorganic material film may be etched by using a single etching process to obtain the inorganic material layer 102.

For example, referring to fig. 20, obtaining the inorganic material layer 102 by using a single etching process includes the following steps:

3031c, exposing the inorganic material film by adopting a fifth mask plate.

In this embodiment, before the fifth mask 505 is used to expose the inorganic material thin film, a photoresist may be coated on a side of the inorganic material thin film away from the flexible substrate 101. And then, exposing the photoresist on the side, away from the flexible substrate 101, of the inorganic material film by using a fifth mask plate.

Referring to fig. 21, the fifth mask 505 has ninth and

tenth mask regions

405a and 405b having different transmittances. An orthographic projection of the ninth mask region 405a on the flexible substrate 101 overlaps the cut region b1 and overlaps the bend region 101 c. The orthographic projection of the tenth mask region 405b on the flexible substrate 101 overlaps the non-cut region b 2. The fifth mask 505 in fig. 21 shows only masked regions corresponding to the binding region 101b and the bending region 101c, and does not show masked regions corresponding to the display region 101 a.

In the embodiment of the present application, if the photoresist coated on the side of the inorganic material film away from the flexible substrate 101 is a positive photoresist, the ninth mask region 405a of the fifth mask plate 505 may be an opening, and the tenth mask region 405b may be an area with a solid material. If the photoresist coated on the side of the inorganic material film away from the flexible substrate 101 is a negative photoresist, the ninth mask region 405a of the fifth mask 505 may be a region having a solid material, and the tenth mask region 405b may be an opening.

3032c, etching the region, corresponding to the ninth mask region, in the exposed inorganic material film by adopting a third etching process to obtain an inorganic material layer.

In this embodiment of the application, after the photoresist on the side of the inorganic material film away from the flexible substrate 101 is exposed by using the fifth mask 505, the photoresist may be developed by using a developing solution. And then etching the area of the exposed inorganic material film corresponding to the ninth mask area 405a by adopting a second etching process. Finally, the photoresist is removed to obtain the inorganic material layer 102.

After the photoresist is developed, a portion of the photoresist corresponding to the ninth mask region 405a is dissolved in the developing solution, and a portion of the photoresist corresponding to the tenth mask region 405b is not dissolved in the developing solution. Thus, portions of the inorganic material film corresponding to the ninth mask region 405a may be etched, and portions of the regions corresponding to the tenth mask region 405b may remain. The etching thickness of the third etching process is a third thickness.

Since the orthographic projection of the ninth mask region 405a on the flexible substrate 101 overlaps the cutting region b1 and overlaps the bending region 101c, after the etching of the third etching process is completed, the portion of the inorganic material thin film located in the cutting region b1 and the portion located in the bending region 101c can be etched. That is, after step 3032c is performed, the thickness of the portion of the inorganic material layer 102 located in the cutting region b1 and the thickness of the portion located in the bending region 101c are the difference between the inorganic material film and the third thickness.

In this implementation, since the portion of the inorganic material layer 102 located in the cutting region b1 and the portion located in the bending region 101c are both subjected to the primary etching, the thickness of the portion of the inorganic material layer 102 located in the bending region 101c is formed to be equal to the thickness of the portion located in the cutting region b 1. In order to form the inorganic material layer 102 in which the inorganic material is retained in a certain thickness at the cutting region b1, the third thickness is smaller than the thickness of the inorganic material film.

For example, assuming that the thickness of the inorganic material thin film is 14000 angstroms and the third thickness is 9000 angstroms, the thickness of the portion of the inorganic material layer 102 located in the bending region 101c and the thickness of the portion located in the cutting region b1 are 14000 angstroms to 9000 angstroms, which is 5000 angstroms.

Optionally, the shapes and sizes of the second mask 402, the fourth mask 404, and the fifth mask 405 may be the same. For example, the second mask 402, the fourth mask 404, and the fifth mask 405 may be the same mask. Alternatively, the second mask 402, the fourth mask 404, and the fifth mask 405 may also be different masks. Of course, the shapes and sizes of the second mask 402, the fourth mask 404, and the fifth mask 405 may also be different. The embodiment of the present application does not limit this.

In the embodiment of the present application, in addition to etching the inorganic material film by using two etching processes or one etching process to obtain the inorganic material layer 102, the inorganic material film may also be etched by using three etching processes or more etching processes. The thickness of the inorganic material layer 102 in the cutting region b1 is smaller than that in the non-cutting region b2, and the thickness of the bending region 101c is smaller than or equal to that in the cutting region b 1.

And 304, sequentially forming an organic material layer and a first protective film on the side, away from the flexible substrate, of the inorganic material layer.

In the embodiment of the present application, after obtaining the inorganic material layer 102, the organic material layer 103 and the first protective film 104 may be sequentially formed on the side of the inorganic material layer 102 away from the flexible substrate 101. The first protective film 104 may be used to protect the inorganic material layer 102 and the organic material layer 103 formed on the flexible substrate 101.

Step 305, the flexible base is stripped from the base substrate by a laser stripping process.

In the embodiment of the present application, since the inorganic material layer 102 formed on the flexible substrate 101 has a good gas-blocking effect with respect to the organic material layer 103, the inorganic material layer 102 covers the binding region 101b (the cutting region b1 and the non-cutting region b2), so that when the flexible substrate 101 is peeled off from the substrate, the inorganic material layer 102 can block the gas generated by the flexible substrate 101, prevent the gas from diffusing between the first protection film 104 and the organic material layer 103, further prevent the first protection film 104 from generating bubbles, and improve the yield of the display panel.

Step 306, forming a second protective film 106 on the side of the flexible substrate 101 away from the inorganic material layer 102.

In the embodiment of the present application, after the flexible base 101 is peeled off from the base substrate, the second protective film 106 may be formed on the side of the flexible base 101 away from the inorganic material layer 102. The second protection film 106 corresponds to the first protection film 104, and is used for protecting a film layer located between the first protection film 104 and the second protection film 106, avoiding damage of the film layer, and ensuring the quality of the flexible display panel.

Step 307, cutting the second protective film 106, the flexible substrate 101, the inorganic material layer 102, the organic material layer 103 and the first protective film 104 along the cutting lines in the cutting region b 1.

In the embodiment of the present application, the flexible substrate 101, the inorganic material layer 102, the organic material layer 103, the first protective film 104 and the second protective film 106 formed on the flexible substrate 101 may be an integral body. Thereby, the flexible substrate 101, the inorganic material layer 102, the organic material layer 103, the first protective film 104, and the second protective film 106 may be cut along the cutting line b11 within the cutting region b 1.

Alternatively, the cutting line b11 extends along a first direction X, and the display region 101a extends along a second direction Y near the boundary of the binding region 101b, the first direction X intersecting the second direction Y. Illustratively, the first direction X is perpendicular to the second direction Y.

In the present embodiment, after the cutting along the cutting line b11 is completed, the side of the cutting line b11 in the cutting region b1 away from the non-cutting region b2 may be cut away. Since the cut line b11 is located in the cut region b1, a part of the cut region b1 may be cut away and another part may be left.

For example, in fig. 11, the flexible substrate 101 has two cut regions b1, and the non-cut region b2 is located between the two cut regions b 1. After the cutting along the cutting line of each cutting region b1 of the two cutting regions b1 is completed, the upper left corner and the upper right corner of the flexible substrate 101 may be cut off.

In the embodiment of the present application, in order to avoid that the part of the inorganic material layer 102 located in the cutting region b1 has a great influence on the cutting process, the thickness of the part of the inorganic material layer 102 located in the cutting region b1 formed in the step 303 is smaller than that of the part of the non-cutting region b2, so that the probability of generating cracks in the display panel can be reduced, and the display effect of the display panel can be ensured.

Fig. 22 is a schematic structural diagram of a display device according to an embodiment of the present application. Referring to fig. 22, the display device may include: a power supply assembly 50 and the display panel 10 provided in the above embodiments. The power supply assembly 50 may be used to supply power to the display panel 10.

Alternatively, the display device may be any product or component having a display function and a fingerprint recognition function, such as an organic light-emitting diode (OLED) display panel, electronic paper, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, or a navigator.

The above description is only exemplary of the present application and should not be taken as limiting, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims

1. A display panel, comprising:

2. The display panel according to claim 1, wherein a thickness of a portion of the inorganic material layer near the target boundary is 1500 to 8000 angstroms.

3. The display panel according to claim 2, wherein a thickness of a portion of the inorganic material layer near the target boundary is 2000 angstroms.

4. A method for manufacturing a display panel, the method comprising:

peeling the flexible substrate from the substrate base plate;

5. The method for preparing the substrate of claim 4, wherein forming the inorganic material layer covering the binding region on the side of the flexible substrate away from the substrate base plate comprises:

6. The manufacturing method according to claim 5, wherein the flexible substrate further has a bending region between the display region and the binding region; the etching the part, located in the cutting area, of the inorganic material film to obtain the inorganic material layer includes:

7. The manufacturing method according to claim 6, wherein the etching the portion of the inorganic material film located in the bending region and the portion of the cutting region to obtain the inorganic material layer includes:

8. The method according to claim 7, wherein the etching the inorganic material film by sequentially using a first etching process and a second etching process to obtain the inorganic material layer comprises:

9. The method according to claim 7, wherein the etching the inorganic material film by sequentially using a first etching process and a second etching process to obtain the inorganic material layer comprises:

10. The method according to claim 6, wherein the etching a portion of the inorganic material thin film located in the target area to obtain the inorganic material layer comprises:

11. The manufacturing method according to any one of claims 6 to 10, wherein a thickness of a portion of the inorganic material layer located in the bending region is smaller than or equal to a thickness of a portion located in the cutting region.

12. The production method according to any one of claims 4 to 10, wherein a thickness of a portion of the inorganic material layer located in the cutting region is 1500 angstroms to 8000 angstroms.

13. The production method according to any one of claims 4 to 10, wherein after the peeling of the flexible base from the base substrate, the method further comprises:

14. The production method according to any one of claims 4 to 10, wherein the peeling of the flexible base from the base substrate comprises:

15. A display device, characterized in that the display device comprises: a power supply assembly and a display panel as claimed in any one of claims 1 to 3;

the power supply assembly is used for supplying power to the display panel.