CN113265637A - Method for binding rotating target with spacer, computer-readable storage medium and binding device - Google Patents
Method for binding rotating target with spacer, computer-readable storage medium and binding device Download PDFInfo
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- CN113265637A CN113265637A CN202110605654.7A CN202110605654A CN113265637A CN 113265637 A CN113265637 A CN 113265637A CN 202110605654 A CN202110605654 A CN 202110605654A CN 113265637 A CN113265637 A CN 113265637A
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- tube
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- gap
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- 238000000034 method Methods 0.000 title claims abstract description 30
- 125000006850 spacer group Chemical group 0.000 title claims abstract description 14
- 238000003860 storage Methods 0.000 title claims abstract description 9
- 229910052738 indium Inorganic materials 0.000 claims abstract description 67
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 67
- 229910052751 metal Inorganic materials 0.000 claims abstract description 46
- 239000002184 metal Substances 0.000 claims abstract description 46
- 239000007788 liquid Substances 0.000 claims abstract description 38
- 239000013077 target material Substances 0.000 claims abstract description 20
- 238000002347 injection Methods 0.000 claims abstract description 13
- 239000007924 injection Substances 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims description 33
- 238000007790 scraping Methods 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 238000009434 installation Methods 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000004590 computer program Methods 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 4
- 238000002203 pretreatment Methods 0.000 claims description 3
- 239000000243 solution Substances 0.000 claims 1
- 229910003437 indium oxide Inorganic materials 0.000 abstract description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract description 3
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 3
- 238000002360 preparation method Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000024121 nodulation Effects 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D19/00—Casting in, on, or around objects which form part of the product
- B22D19/0081—Casting in, on, or around objects which form part of the product pretreatment of the insert, e.g. for enhancing the bonding between insert and surrounding cast metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D19/00—Casting in, on, or around objects which form part of the product
- B22D19/04—Casting in, on, or around objects which form part of the product for joining parts
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to the technical field of magnetron sputtering target preparation, in particular to a rotary target binding method with a spacer, a target binding device and a computer readable storage medium. According to the method for binding the oxide-removed objects of the rotary target material, indium liquid is injected from bottom to top, the metal screen is firstly stretched into a gap between the back tube and the target tube before the indium liquid is injected, the outer surface of the back tube and the inner surface of the target tube are scraped by using the surface of the metal screen, indium oxide layers (or other oxides) on the back tube and the target tube are removed, and the bonding rate of indium and the target material/the back tube is improved. After the indium injection is finished, the metal screen is arranged back in the gap, the existence of the metal screen can improve the electric conduction and heat conduction performance of the indium liquid connecting layer, the needed indium liquid is less, and the cost is reduced.
Description
Technical Field
The invention relates to the technical field of magnetron sputtering target preparation, in particular to a rotary target binding method with a spacer, a computer-readable storage medium and a binding device for realizing binding by applying the oxide removing method.
Background
In recent years, thin film materials prepared by sputtering are favored by industries such as flat panel displays, electronic controllers, glass coating, optical films and the like because of their advantages such as high density and excellent adhesion. With the rapid development of the above-mentioned fields, the demand for sputtering targets has sharply increased. The target material is generally classified into a planar target material, a rotary target material and a profile target material according to the shape of the sputtering surface. The sputtering usage of the planar target can reach 30% -40%, the sputtering usage rate of the rotary target can reach 80%, the rotary target is in a hollow round tube shape and can rotate around a fixed magnetron sputtering device, the target surface can be uniformly etched by 360 degrees, the surface of the target is smooth due to the uniform usage, the generation of a 'nodulation' phenomenon is reduced, the coating uniformity is improved, the utilization rate of the target is improved, and the coating cost is reduced, so that the rotary target is a great trend for future development.
In the preparation process of the rotary target, for ceramic targets and certain metal targets which cannot be produced by a spraying and pouring mode, a binding and adhering method (binding) is used for binding the targets to be sputtered with the back tube. At present, most of the binding methods are to sleeve an outer tube target with a larger diameter on a back tube with a relatively smaller diameter, fill a gap between the outer tube target and the back tube with a solder with good electric and thermal conductivity, such as metal indium or conductive adhesive, and weld the outer tube target and the back tube. The method for binding with the metal indium needs to inject the indium when the indium is heated and maintained in a state of being higher than a melting point, and the metal indium is easily oxidized in the air, so that the bonding rate of the indium and the target material/the back tube is low.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the method for binding the rotary target with the spacer can improve the bonding rate of indium and the target/a back tube in a binding link.
The method for binding the rotating target provided with the spacer comprises the following steps:
the method comprises the following steps that a base of a binding device is provided with an indium injection device and a back tube installation position, a back tube is installed at the back tube installation position, a plurality of target tubes are sleeved on the periphery of the back tube in an aligned mode, and in the state, a gap between the back tube and a target tube at the bottommost layer is aligned with an output port of the indium injection device;
stretching the metal screen into a gap between the back tube and the target tube, and pulling the metal screen to scrape the outer surface of the back tube and/or the inner surface of the target tube;
injecting indium liquid into a gap between the back tube and the bottommost target tube from the bottom of the gap upwards;
and assembling, namely filling indium liquid into the gap, and then assembling the metal screen back into the gap.
Preferably, the method comprises a pretreatment step which is carried out on the metal screen before the scraping step, and the indium liquid is coated on the surface of the metal screen.
Preferably, the pre-treatment step is specifically achieved by ultrasonic coating.
Preferably, the metal mesh is a copper mesh.
Preferably, the copper mesh is 50-120 meshes.
Preferably, the scraping step and the binding step are performed simultaneously.
Preferably, in the scraping step, the metal screen is lifted, specifically, the metal screen is lifted and pressed down reciprocally in the gap in the radial direction.
Preferably, a cleaning step is included, performed before the assembly step: and pulling out the metal screen to clean the oxide attached to the surface of the metal screen.
A computer-readable storage medium is also provided, which stores a computer program that, when being executed by a processor, is able to carry out the above-mentioned method of rotating target binding with spacers.
The binding device comprises a base, an indium injection device, a back tube installation position, an outer heating structure covering the periphery of the rotary target, a plurality of sections of annular heating covers, heating pipes respectively installed on the inner walls of the sections of heating covers, a sealing cover detachably installed at the top of the annular heating cover on the uppermost layer, and a processor capable of executing computer programs on the computer readable storage medium.
Has the advantages that: according to the method for binding the rotary target with the spacer, the indium liquid is injected from bottom to top, the metal screen is firstly stretched into the gap between the back tube and the target tube before the indium liquid is injected, the outer surface of the back tube and the inner surface of the target tube are scraped by using the surface of the metal screen, the indium oxide layers (or other oxides) on the back tube and the target tube are removed, and the bonding rate of indium and the target/back tube is improved. After the indium injection is finished, the metal screen is arranged back in the gap, the existence of the metal screen can improve the electric conduction and heat conduction performance of the indium liquid connecting layer, the needed indium liquid is less, and the cost is reduced.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of a binding apparatus for a rotary target according to the present invention.
Fig. 2 is a schematic view of a target tube and backing tube mounting structure of one embodiment of fig. 1.
Fig. 3 is a schematic structural diagram of an indium injection device according to an embodiment in fig. 1.
Fig. 4 is a schematic view of a screen mounting structure.
Fig. 5 is a schematic structural diagram of another embodiment of the binding apparatus for a rotary target according to the present invention.
Detailed Description
The invention is described in further detail below with reference to specific embodiments.
Example one
As shown in fig. 1 and 2, the binding heating device for a rotary target in this embodiment includes a backing tube 5 and multiple target tubes 6, and the binding process is a process of fixing each target tube 6 to the outer wall of the backing tube 5 in a heat-conducting and electrically-conducting manner. The present embodiment adopts a mode of pouring indium liquid (binding material) between the back tube 5 and the target tube 6 to realize binding, wherein the indium liquid needs to be heated to keep flowing, and the binding heating device adopted in the present embodiment is an external heating structure shown in fig. 1. The outer heating structure comprises a plurality of sections of annular heating hoods 3 and heating pipes which are respectively arranged on the inner walls of the sections of heating hoods 3, the heating hoods 3 are coaxially stacked through a support 1 and a rotatable clamping piece 2, the outer heating structure preferably comprises an installation base for fixing the lowermost annular heating hood 3, the outer heating structure further comprises a sealing cover 4, and the sealing cover 4 is detachably arranged at the top of the uppermost annular heating hood 3. The more target tubes 6 to be bonded, the more annular heating mantles 3 to be stacked, and the more adjacent annular heating mantles 3 are sealed by a gasket. Be equipped with many places target pipe temperature-detecting device in the heating mantle 3, be equipped with the observation window 31 that is used for observing target pipe temperature-detecting device testing result on the heating mantle 3.
The specific implementation steps of the method for binding the rotating target with the spacer are as follows.
A pretreatment step: uniformly coating indium on the outer wall of the back tube and the inner wall of the target material, and smearing the whole welding surface by using an ultrasonic soft welding machine and a steel wire brush; after finishing smearing, the surface of the metal indium is cleaned by using a steel wire brush, impurities such as raised indium slag and the like are removed, so that the back tube and the target material are smooth and have no nodular protrusion, and the connection strength between the target material and the back tube is ensured.
A target material mounting step: an indium injection device and a back tube installation position are arranged on a base of the binding device, after a back tube coated with metal indium and a target material are naturally cooled to room temperature, the back tube is installed at the back tube installation position, a plurality of target tubes are sleeved on the periphery of the back tube in an aligned mode, and in the state, a gap between the back tube and the target tube at the bottommost layer (the gap width is determined according to the gap requirement between the back tube of a rotary target material finished product and the target tube, for example, 10-100 mm) is aligned with an output port of the indium injection device; specifically, the mounting base is further fixed with a binding material feeding device 83 shown in fig. 3, the binding material feeding device 83 feeds from a side opening 831 and discharges from a top opening 832, and the top opening 832 of the binding material feeding device 83 aligns with a gap between the target tube 6 and the backing tube 5 in a state that the target tube 6 is sleeved outside the backing tube 5 in a segmented manner.
The pretreatment steps performed on the metal screen mesh are as follows: the indium liquid was applied to the surface of a copper mesh as a metal mesh by ultrasonic coating. During binding, the copper mesh is subjected to ultrasonic coating before the indium liquid is injected, so that indium is well combined with the copper mesh, and the copper mesh has good wettability.
A scraping step: the mesh 9 is extended into the gap between the backing tube and the target tube (see fig. 4), and the mesh 9 is pulled to scrape the outer surface of the backing tube and the inner surface of the target tube. Specifically, the screen mesh 9 is extended into the gap between the back tube and the target tube until the lowest part of the screen mesh 9 abuts against the base of the binding device, and the screen mesh 9 is continuously pressed downwards to be vertically bent to form a plurality of folds until the edges of the plurality of folds in all the folds of the screen mesh 9 are contacted with the outer surface of the back tube and the inner surface of the target tube; the screen 9 is pulled upward and the edges of the screen 9 scrape the indium oxide (or other oxide) against the outer surface of the backing tube and the inner surface of the target tube. In the scraping step, the screen 9 may be lifted up and down in the gap in a reciprocating manner in the radial direction, and the screen 9 may also be lowered in the gap in a reciprocating manner in the circumferential direction, so that the scraping strength of the screen 9 on the oxide is enhanced and the oxide is removed as much as possible. Wherein a push-pull member (not shown) is installed at the upper end of the metal mesh so that the metal mesh can extend to the gap between the target tube and the backing tube.
And pulling the bottom of the back tube upwards for a certain distance after scraping in the scraping step, and then synchronously performing the scraping step and the binding step. The binding step is carried out under the state that the external heating structure works to heat the target material, indium liquid is injected into the gap from the bottom of the gap between the back tube and the target tube at the bottommost layer upwards, the speed of injecting the indium liquid is controlled so that the highest point of the indium liquid in the gap is lower than the lowest point of the screen 9 until the screen 9 leaves the gap, and the metal indium liquid fills the whole gap. Wherein the scraping step comprises a pulse injection step: the rapid injection of indium liquid is performed at intervals to allow the indium liquid to have a bump-up condition that allows the indium liquid to scrub away the oxides that adhere to the walls.
Cleaning: and after the gap is filled with the indium liquid, pulling out the metal screen to clean the oxide attached to the surface of the metal screen.
Assembling: after the cleaning step is performed, the metal mesh is fitted back into the gap between the backing tube and the target tube.
And heating the outer wall of the target tube and/or the inner wall of the backing tube in the binding step, stopping heating after the indium liquid is injected, cooling and shrinking the indium liquid at the moment, allowing the highest part of the indium liquid to fall, performing the heating step at intervals, and heating again at intervals of a short time T (such as half an hour) after the heating is stopped, so that the falling indium liquid can fully contact the outer wall of the backing tube and the inner wall of the target tube.
And finally, cooling the back tube, the target tube and the metal indium liquid between the back tube and the target tube to room temperature, and then removing the clamp for relatively fixing the target material and the back tube. And detecting the processed rotary target material by adopting ultrasonic waves, judging whether a gap is contained in the metal indium or not according to data returned by the ultrasonic waves, so as to determine whether the binding of the target material is qualified or not, and if the gap influencing the connection strength between the target material and the back tube exists, binding again.
In this embodiment, the metal mesh 9 is a copper mesh made of copper material as shown in fig. 4, and the mesh number of the copper mesh is 50-200 mesh. Before scraping, the copper mesh is coated with ultrasonic waves to enable the indium liquid to be well combined with the screen mesh 9, the copper mesh has good wettability, then other materials (such as aluminum) are sprayed on the surface of the screen mesh 9 in an arc melting mode to increase the roughness of the screen mesh 9, and in the scraping step, the screen mesh 9 is pulled to rub the target material and the surface of the back tube to bring out oxides. The screen 9 which has performed the scraping step can be put back into the gap between the backing tube and the target tube to serve as a spacer after being cleaned, and the binding method utilizes the characteristics of copper and good electric conduction and heat conduction, reduces the using amount of indium and saves the cost.
The back tube has good electrical and thermal conductivity, and can be made of metal or alloy, such as stainless steel, Ti, Cu, etc. The target tube can be made of ceramic or metal, such as ITO, AZO, Si, SiO, SiP, MoNb, ZnO, Al, Cr, Co, etc.
Example two
The present embodiment differs from the first embodiment in that another binding device, see fig. 5, is used, which has a large volume of excess indium liquid holding chamber 7 at the top. In the binding step, excess indium liquid is injected so that the flushed indium liquid containing oxides floats on the uppermost layer and enters the accommodating cavity 7, the indium liquid falls back to the gap or pure indium without oxides after the temperature of the indium liquid falls, and impurities containing oxides and/or other impurities floating on the upper layer of the indium liquid are left in the excess indium liquid accommodating cavity 7.
The above description is only the embodiments of the present invention, and the scope of protection is not limited thereto. The insubstantial changes or substitutions will now be made by those skilled in the art based on the teachings of the present invention, which fall within the scope of the claims.
Claims (10)
1. The binding method of the rotary target material with the spacer is characterized by comprising the following steps of:
the method comprises the following steps that a base of a binding device is provided with an indium injection device and a back tube installation position, a back tube is installed at the back tube installation position, a plurality of target tubes are sleeved on the periphery of the back tube in an aligned mode, and in the state, a gap between the back tube and a target tube at the bottommost layer is aligned with an output port of the indium injection device;
stretching the metal screen into a gap between the back tube and the target tube, and pulling the metal screen to scrape the outer surface of the back tube and/or the inner surface of the target tube;
injecting indium liquid into a gap between the back tube and the bottommost target tube from the bottom of the gap upwards;
and assembling, namely filling indium liquid into the gap, and then assembling the metal screen back into the gap.
2. The method of claim 1, wherein the method further comprises a pre-treatment step of coating the metal mesh with an indium solution before the scraping step.
3. The method for binding a rotating target with a spacer according to claim 2, wherein the pre-treatment step is performed by ultrasonic coating.
4. The method of claim 1, wherein the metal mesh is a copper mesh.
5. The method for binding a rotating target with a spacer according to claim 4, wherein the copper mesh is 50-120 mesh.
6. The method of claim 1, wherein the scraping step and the binding step are performed simultaneously.
7. The method according to claim 1, wherein in the scraping step, the metal screen is lifted, in particular, the metal screen is lifted and pressed down in the gap in a reciprocating manner up and down in the radial direction.
8. The method of claim 1, comprising a cleaning step performed before the assembling step, wherein the cleaning step comprises: and pulling out the metal screen to clean the oxide attached to the surface of the metal screen.
9. Computer-readable storage medium, in which a computer program is stored which, when being executed by a processor, is capable of carrying out the method for rotating target binding with spacers according to any one of claims 1 to 8.
10. The binding apparatus, the rotary target includes a backing tube and a plurality of sections of annular target tubes, the binding apparatus includes a base, an indium injection device and a backing tube mounting position, and is characterized by further including an external heating structure covering the periphery of the rotary target, the external heating structure includes a plurality of sections of annular heating covers and heating tubes respectively mounted on the inner walls of the heating covers, and a sealing cover detachably mounted on the top of the uppermost annular heating cover, and further including a processor and the computer-readable storage medium according to claim 9, wherein the computer program stored in the computer-readable storage medium is executable by the processor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110605654.7A CN113265637A (en) | 2021-05-31 | 2021-05-31 | Method for binding rotating target with spacer, computer-readable storage medium and binding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110605654.7A CN113265637A (en) | 2021-05-31 | 2021-05-31 | Method for binding rotating target with spacer, computer-readable storage medium and binding device |
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| CN113265637A true CN113265637A (en) | 2021-08-17 |
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| CN202110605654.7A Pending CN113265637A (en) | 2021-05-31 | 2021-05-31 | Method for binding rotating target with spacer, computer-readable storage medium and binding device |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140129677A (en) * | 2013-04-30 | 2014-11-07 | 한순석 | Rotary for sputtering target assembly manufactured by the bonding method for rotary sputtering target assembly and bonding method thereof |
| WO2020236396A1 (en) * | 2019-05-22 | 2020-11-26 | Sci Engineered Materials, Inc. | High efficiency rotatable sputter target |
-
2021
- 2021-05-31 CN CN202110605654.7A patent/CN113265637A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140129677A (en) * | 2013-04-30 | 2014-11-07 | 한순석 | Rotary for sputtering target assembly manufactured by the bonding method for rotary sputtering target assembly and bonding method thereof |
| WO2020236396A1 (en) * | 2019-05-22 | 2020-11-26 | Sci Engineered Materials, Inc. | High efficiency rotatable sputter target |
Non-Patent Citations (1)
| Title |
|---|
| 邹僖 等, 机械工业出版社 * |
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Application publication date: 20210817 |