CN106222619A - A kind of substrate, substrate and preparation method thereof, electronic device - Google Patents
A kind of substrate, substrate and preparation method thereof, electronic device Download PDFInfo
- Publication number
- CN106222619A CN106222619A CN201610675157.3A CN201610675157A CN106222619A CN 106222619 A CN106222619 A CN 106222619A CN 201610675157 A CN201610675157 A CN 201610675157A CN 106222619 A CN106222619 A CN 106222619A
- Authority
- CN
- China
- Prior art keywords
- substrate
- cushion
- manufacture method
- sub
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 156
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 78
- 238000001816 cooling Methods 0.000 claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 claims description 37
- 238000010884 ion-beam technique Methods 0.000 claims description 23
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 238000013517 stratification Methods 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 230000003139 buffering effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 39
- 239000010409 thin film Substances 0.000 abstract description 9
- 230000007423 decrease Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 71
- 238000000151 deposition Methods 0.000 description 15
- 230000008021 deposition Effects 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 6
- 229920006254 polymer film Polymers 0.000 description 6
- 229920005570 flexible polymer Polymers 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- -1 HIZO Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000002153 concerted effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000005457 ice water Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The present invention relates to technical field of electronic devices, disclose a kind of substrate, substrate and preparation method thereof, electronic device.The substrate of the present invention includes that the surface of a substrate forms the step of cushion, and the cushion of desired thickness is formed by repeatedly film-forming process, the thinner thickness of the sub-cushion that film-forming process is formed every time, and all carry out cooling process after forming each sub-cushion, the bulk temperature making substrate is the most relatively low, decreases the generation of internal stress.Simultaneously, thermal coefficient of expansion due to cushion is less than the thermal coefficient of expansion of substrate, cushion is made to have preferable thermostability, it is thus possible to make each function film of electronic device the most on the buffer layer, ensure quality of forming film, and reduce the generation of stress in thin films, improve the quality of electronic device.
Description
Technical field
The present invention relates to technical field of electronic devices, particularly relate to a kind of substrate, substrate and preparation method thereof, electronics device
Part.
Background technology
In recent years, constantly develop to lightweight, slimming and flexibility direction along with electronic device, flexible device, such as:
LCD display and OLED display, flexible thin-film solar cell, cause people and pay high attention to.At flexible polymer thin
Deposit transparency conducting layer in film substrate and make flexible transparent conductive substrate, thus replace traditional hard glass electrically-conductive backing plate and be
Realize the core technology of electronic device flexibility.
But, polymer film base material thermal resistance is poor, and transparency conducting layer can only sink at a lower temperature
Long-pending, it is difficult to obtain the transparency conducting layer with good deposition quality.Meanwhile, at relatively high temperatures during deposition transparency conducting layer, by
Differing relatively big in transparency conducting layer with the thermal coefficient of expansion of thin polymer film, easily produce bigger internal stress, above-mentioned factor is equal
The correlated performance of flexible device can be had a negative impact.
Summary of the invention
The present invention provides a kind of substrate, substrate and preparation method thereof, electronic device, and in order to solve, how thermostability is preferable
The problem of substrate.
For solving above-mentioned technical problem, the embodiment of the present invention provides the manufacture method of a kind of substrate, is included in a substrate
Surface formed cushion step, formed cushion step include:
Form sub-cushion on the surface of described substrate, and described sub-cushion is carried out cooling process；
Repeat the above steps, forms many sub-cushions, by cushion described in the plurality of sub-cushion stratification, institute
State the thermal coefficient of expansion thermal coefficient of expansion less than described substrate of cushion.
The embodiment of the present invention also provides for the manufacture method of a kind of transparent conductive substrate, uses manufacture method as above
Form substrate, the cushion of described substrate is formed transparency conducting layer.
The embodiment of the present invention also provides for the manufacture method of a kind of display base plate, including:
Manufacture method as above is used to form substrate；
The cushion of described substrate is formed each film layer structure of display.
Also providing for a kind of substrate in the embodiment of the present invention, use manufacture method as above to prepare, described substrate includes
Substrate arranges cushion over the substrate with contacting, and described cushion includes the sub-cushion that multiple stacking is arranged, described
The thermal coefficient of expansion of cushion is less than the thermal coefficient of expansion of described substrate.
The embodiment of the present invention also provides for a kind of transparent conductive substrate, including:
Substrate as above；
It is formed at the transparency conducting layer on the cushion of described substrate.
The embodiment of the present invention also provides for a kind of display base plate, it is characterised in that including:
Substrate as above；
Each film layer structure of the display being arranged on the cushion of described substrate.
The embodiment of the present invention also provides for a kind of electronic device, uses substrate as above.
Having the beneficial effect that of the technique scheme of the present invention:
In technique scheme, being formed the cushion of desired thickness by repeatedly film-forming process, each film-forming process is formed
The thinner thickness of sub-cushion, and all carry out cooling process after forming each sub-cushion so that the overall temperature of substrate
Spend the most relatively low, decrease the generation of internal stress.Simultaneously as the thermal coefficient of expansion of cushion is less than the thermal expansion system of substrate
Number so that cushion has preferable thermostability such that it is able to make each of electronic device the most on the buffer layer
Function film, it is ensured that quality of forming film, and reduce the generation of stress in thin films, improve the quality of electronic device.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
In having technology to describe, the required accompanying drawing used is briefly described, it should be apparent that, the accompanying drawing in describing below is only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, also may be used
To obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 represents the axonometric chart of substrate in the embodiment of the present invention；
Fig. 2 represents the front view of Fig. 1；
Fig. 3-Fig. 5 represents the manufacturing process schematic diagram of substrate in the embodiment of the present invention；
Fig. 6 represents the axonometric chart of transparent conductive substrate in the embodiment of the present invention；
Fig. 7 represents the front view of Fig. 6；
Fig. 8 represents the manufacture method flow chart of transparent conductive substrate in the embodiment of the present invention.
Detailed description of the invention
Below in conjunction with drawings and Examples, the detailed description of the invention of the present invention is described in further detail.Following reality
Execute example for the present invention is described, but be not limited to the scope of the present invention.
Embodiment one
For electronic device, such as: display device, solaode etc., it is desirable to provide carry each functional film layer structure
Substrate, the quality of substrate has directly impact to the quality of electronic device.
In the present invention, the quality of substrate specifically refers to the thermostability of substrate, and higher thermostability ensure that in hot environment
Under film forming on the substrate, improve quality of forming film, and reduce the generation of internal stress.
The present embodiment provides a kind of substrate and preparation method thereof, i.e. in order to improve the thermostability of substrate.
Shown in Fig. 1-Fig. 5, described manufacture method is included in the step of the surface formation cushion 1 of a substrate 10, shape
The step becoming cushion 1 includes:
Form sub-cushion 11 on the surface of substrate 10, and antithetical phrase cushion 11 carries out cooling process；
Repeat the above steps, forms many sub-cushions 11, many sub-cushions 11 form cushion 1, cushion 1
Thermal coefficient of expansion is less than the thermal coefficient of expansion of substrate 10.
Above-mentioned manufacture method, forms cushion by repeatedly film-forming process on substrate, until the thickness of cushion reaches
Requirement.Wherein, the thickness of cushion is it is known that then the thickness of film forming is less than the final thickness of cushion, repeatedly film forming stacking every time
Accumulation forms final thickness.That is, the thickness of sub-cushion is less than the thickness of cushion 1, the thickness after many sub-cushion 11 stackings
Degree is the thickness of cushion 1.
It should be noted that the thermal coefficient of expansion of material is the least, its deformation quantity being heated is the least, and thermostability is the best.
Shown in Fig. 1 and Fig. 2, the substrate prepared by above-mentioned manufacture method is included substrate 10 and is arranged on substrate with contacting
Cushion 1 on 10, cushion 1 includes the sub-cushion 11 that multiple stacking is arranged, and the thermal coefficient of expansion of cushion 1 is less than substrate
The thermal coefficient of expansion of 10.
Technical scheme forms the cushion of desired thickness by repeatedly film-forming process, and each film-forming process is formed
The thinner thickness of sub-cushion, and all carry out cooling process after forming each sub-cushion so that the overall temperature of substrate
Spend the most relatively low, decrease the generation of internal stress.Simultaneously as the thermal coefficient of expansion of cushion is less than the thermal expansion system of substrate
Number so that cushion has preferable thermostability such that it is able to make each of electronic device the most on the buffer layer
Function film, it is ensured that quality of forming film, and reduce the generation of stress in thin films, improve the quality of electronic device.
Wherein, the thickness of many sub-cushions 11 can be consistent or inconsistent.The present embodiment arranges many sub-cushions
The consistency of thickness of 11, becomes film parameters identical, such as: film formation time, simplifies the processing technology of cushion.In actual application,
The thickness of sub-cushion 11 can be set according to the thickness of temperature requirements and cushion 1, prevent from forming each sub-cushion
After 11, the bulk temperature of substrate is higher, produces bigger internal stress.Such as: cushion 1 is set and includes at least 4 sub-cushions
11。
Specifically can form sub-cushion 11 by magnetron sputtering film-forming process, because magnetron sputtering film-forming process has height
The advantages such as speed, low temperature, plated film area be big and adhesive force is strong, it is possible to realize fast filming under lower temperature environments, subtract further
The generation of few internal stress.And the adhesive force of film forming is strong, by increasing capacitance it is possible to increase substrate 10 and the adhesion of cushion 1, make cushion 1 not
Easily peel off from substrate 10.
Technical scheme is particularly suited for flexible substrates and making thereof, because the substrate of flexible substrates is polymer
Thin film, its thermostability is poor, limits the film-forming temperature of each function film of electronic device, reduces quality of forming film, and can produce
Raw bigger internal stress, affects the quality of electronic device, can solve this technology well by technical scheme and ask
Topic.Certainly, technical scheme is also applied for the non-flexible substrates such as substrate of glass, quartz substrate and making thereof.
For flexible substrates, substrate 10 is flexible substrate, and its material can select the one in PET, PC, PEN, PI.
In order to improve the thermostability of substrate, cushion 1 selects the material that thermal coefficient of expansion is less, such as: SiO2、TiO2、
CeO2In one.Optionally, the material of each sub-cushion 11 is identical, to reduce cost, simplifies the making work of cushion 1
Skill.
After forming multiple each sub-cushions 11, it is both needed to antithetical phrase cushion 11 and carries out cooling process, reduce internal stress
Produce.Wherein, it is achieved the mode of cooling has a variety of, such as: ice-water bath, ventilation.
Shown in Fig. 3-Fig. 5, in the present embodiment antithetical phrase cushion 11 carry out cooling process step particularly as follows:
The surface using ion beam (line of band arrow in respective figure) antithetical phrase cushion 11 processes.
Specifically can use Ar+The surface of ion beam antithetical phrase cushion 11 processes.
Above-mentioned steps is processed by the surface of ion beam antithetical phrase cushion 11, realizes cooling, can complete into
After film, lower the temperature immediately, there is the advantages such as efficient, quick and easy.And Multiple depositions, each sub-cushion 11 all passes through
The process of ion beam, it is possible to obtain the cushion 1 of dense uniform.Meanwhile, after ion beam surface processes, cushion 1 surface
Effective surface area increases, and arranges the interlocking between thin film on the buffer layer 1 and cushion 1 interface and strengthens, and increases interlayer knot
Make a concerted effort so that each function film of electronic device is difficult to from substrate peel off.For flexible device, bigger inter-layer bonding force is also
Buckle resistance can be improved.When contact arranges conductive layer on the buffer layer 1, due to after Ion Beam Treatment, cushion 1 with lead
There is the interaction between electric dipole in the interface of electric layer, it is possible to promotes that conductive layer forms polycrystalline state, improve leading of conductive layer
Electrically.
In a specific embodiment, shown in Fig. 1, Fig. 3-Fig. 5, the manufacture method of flexible substrates is specifically wrapped
Include:
Step S11, cleaning flexible polymer film substrate 10；
Step S12 is as it is shown on figure 3, utilize magnetron sputtering film-forming process to deposit a son on thin polymer film substrate 10 and delay
Rushing layer 11, depositing temperature is 100 DEG C, and air pressure is 1Pa, and deposition power is 200W.When the thickness of this sub-cushion 11 is about 20nm
Time, utilize Ar+Ion beam antithetical phrase cushion 11 surface process, the energy of ion beam is 150eV, and angle of incidence is 80 °,
Time is 10s；
Step S13, repetition step S12, see shown in Fig. 4 and Fig. 5, until the thickness of cushion 1 reaches 100nm, such as Fig. 1
Shown in.
In another particular embodiment of the invention, shown in Fig. 1, Fig. 3-Fig. 5, the manufacture method of flexible substrates is specifically wrapped
Include:
Step S21, cleaning flexible polymer film substrate 10；
Step S22 is as it is shown on figure 3, utilize magnetron sputtering film-forming process to deposit a son on thin polymer film substrate 10 and delay
Rushing layer 11, depositing temperature is 100 DEG C, and air pressure is 1Pa, and deposition power is 200W.When this sub-cushion 11 thickness is about 20nm,
Utilize Ar+The surface of ion beam antithetical phrase cushion 11 processes, and ion beam energy is 100eV, and angle of incidence is 80 °, and the time is
13s；
Step S23, repetition step S22, see shown in Fig. 4 and Fig. 5, upper until the thickness of cushion 1 reaches 100nm, as
Shown in Fig. 1.
Above-mentioned two embodiment only provides two kinds of concrete combination of process parameters, in actual application, ability
Field technique personnel it is readily conceivable that and each technological parameter can also be carried out Reasonable adjustment, and it broadly falls into protection scope of the present invention,
If the purpose of the present invention of being capable of.
Those skilled in the art are easy to release, and the material of described cushion can also select metal material or electrically conducting transparent
Material, utilizes above-mentioned manufacture method to prepare the cushion of conduction.Magnetron sputtering film-forming process is specifically utilized to form described conduction
Cushion.When described substrate is transparent substrates, described conductive layer selects transparent conductive material, such as: HIZO, ZnO, TiO2、
CdSnO, MgZnO, IGO, IZO, ITO or IGZO.
Embodiment two
Shown in Fig. 6-Fig. 8, the manufacture method of a kind of transparent conductive substrate in the present embodiment, including:
The manufacture method in embodiment one is used to form substrate；
The cushion 1 of described substrate is formed transparency conducting layer 2.
The transparent conductive substrate prepared by above-mentioned manufacture method includes the substrate in embodiment one, and is arranged on described
Transparency conducting layer 2 on the cushion 1 of substrate.
The present embodiment is arranged on the cushion 1 of substrate due to transparency conducting layer 2 contact, and the thermal expansion of cushion 1
Coefficient is relatively big, has preferable thermostability such that it is able to form transparency conducting layer 2 in high temperature environments, it is ensured that transparency conducting layer 2
There is the performance of excellence.And cushion 1 is less with the difference of thermal expansion coefficient of transparency conducting layer 2, decreases the product of internal stress
Raw, improve the quality of transparent conductive substrate.
Technical scheme is particularly suited for transparent conductive substrate and the making thereof of flexibility, because the making of cushion
The thermostability of substrate can be greatly improved, it is ensured that the film-forming temperature of transparency conducting layer, improve the performance of transparency conducting layer.Certainly,
Technical scheme is also applied for transparent conductive substrate and the making thereof of inflexibility, and the transparent conductive substrate of inflexibility is permissible
Select glass substrate, quartz substrate etc..
As for substrate and manufacturing process thereof, may refer to the description in embodiment one, be not described in detail in this.
Optionally, after each sub-cushion 11 forming cushion 1, the surface of ion beam antithetical phrase cushion 11 is used to enter
Row processes, it is possible to increase the effective surface area on cushion 1 surface, strengthens cushion 1 and is engaged work between transparency conducting layer 2 interface
With, increase the adhesion of cushion 1 and transparency conducting layer 2 so that transparency conducting layer 2 is difficult to from substrate peel off.For flexibility
Device, bigger inter-layer bonding force can also improve buckle resistance.When contact arranges transparency conducting layer 2 on the buffer layer 1, by
In after Ion Beam Treatment, there is the interaction between electric dipole in the interface of cushion 1 and transparency conducting layer 2, it is possible to promotees
Enter transparency conducting layer 2 and form polycrystalline state, improve the electric conductivity of transparency conducting layer 2.
In a specific embodiment, shown in Fig. 1, Fig. 3-Fig. 5, the manufacture method of transparent conductive substrate is concrete
Including:
Step S11, cleaning flexible polymer film substrate 10；
Step S12 is as it is shown on figure 3, utilize magnetron sputtering film-forming process to deposit a son on thin polymer film substrate 10 and delay
Rushing layer 11, depositing temperature is 100 DEG C, and air pressure is 1Pa, and deposition power is 200W.When the thickness of this sub-cushion 11 is about 20nm
Time, utilize Ar+Ion beam antithetical phrase cushion 11 surface process, the energy of ion beam is 150eV, and angle of incidence is 80 °,
Time is 10s；
Step S13, repetition step S12, see shown in Fig. 4 and Fig. 5, until the thickness of cushion 1 reaches 100nm, such as Fig. 1
Shown in.
Step S14, magnetron sputtering film-forming process is utilized to deposit transparency conducting layer 2 on the buffer layer 1.Depositing temperature is 100
DEG C, air pressure is 0.5Pa, and deposition power is 100W, and the thickness of transparency conducting layer 2 is 70nm.
The sheet resistance of flexible and transparent conductive substrate prepared by above-mentioned steps S11-S14 is 19 Ω/sq, and light passes through
Rate is 88%.
In another particular embodiment of the invention, shown in Fig. 1, Fig. 3-Fig. 5, the manufacture method tool of transparent conductive substrate
Body includes:
Step S21, cleaning flexible polymer film substrate 10；
Step S22 is as it is shown on figure 3, utilize magnetron sputtering film-forming process to deposit a son on thin polymer film substrate 10 and delay
Rushing layer 11, depositing temperature is 100 DEG C, and air pressure is 1Pa, and deposition power is 200W.When this sub-cushion 11 thickness is about 20nm,
Utilize Ar+The surface of ion beam antithetical phrase cushion 11 processes, and ion beam energy is 100eV, and angle of incidence is 80 °, and the time is
13s；
Step S23, repetition step S22, see shown in Fig. 4 and Fig. 5, upper until the thickness of cushion 1 reaches 100nm, as
Shown in Fig. 1；
Step S24, magnetron sputtering film-forming process is utilized to deposit transparency conducting layer 2 on the buffer layer 1.Depositing temperature is 100
DEG C, air pressure is 0.5Pa, and deposition power is 100W, and the thickness of transparency conducting layer 2 is 70nm.
The sheet resistance of flexible and transparent conductive substrate prepared by above-mentioned steps S21-S24 is 27 Ω/sq, and light passes through
Rate is 86%.
Relatively above-mentioned two embodiment it appeared that: the power (energy/process time) of Ion Beam Treatment can affect
The sheet resistance of bright electrically-conductive backing plate and light penetration.Because the power of Ion Beam Treatment is the biggest, cushion 1 and transparency conducting layer
Interaction between the electric dipole at 2 interfaces is the strongest, may advantageously facilitate transparency conducting layer 2 and forms polycrystalline state, improves transparent leading
The electric conductivity of electric layer 2.And the power of Ion Beam Treatment is the biggest, more advantageously forms the cushion 1 of dense uniform, light can be reduced
The transmitance of line.
Above-mentioned two embodiment only provides two kinds of concrete combination of process parameters, in actual application, ability
Field technique personnel it is readily conceivable that and each technological parameter can also be carried out Reasonable adjustment, and it broadly falls into protection scope of the present invention,
If the purpose of the present invention of being capable of.
Embodiment three
The present embodiment provides the manufacture method of a kind of display base plate, including:
The manufacture method in embodiment one is used to form substrate；
The cushion of described substrate is formed each film layer structure of display.
The display base plate prepared by above-mentioned manufacture method includes the substrate in embodiment one, and is arranged on described substrate
Cushion on each film layer structure of display.
In the present embodiment, each film layer structure contact due to display is arranged on the cushion of substrate, and the heat of cushion
The coefficient of expansion is relatively big, has preferable thermostability, when the conductive layers make contact of display is arranged on the buffer layer, it is possible at high temperature
The conductive layer of display is formed, it is ensured that the conductive layer of display has the performance of excellence under environment.And cushion is used with display
The difference of thermal expansion coefficient of conductive layer less, decrease the generation of internal stress, improve the quality of display base plate.
Technical scheme is particularly suited for flexible display substrates and making thereof, because the making of cushion can be big
The big thermostability improving substrate, it is ensured that the film-forming temperature of each film layer structure of display, improves each film layer structure of display
Performance.Certainly, technical scheme is also applied for display base plate and the making thereof of inflexibility, and the display base plate of inflexibility can
To select glass substrate, quartz substrate etc..
As a example by flexible organic light-emitting diode display substrate, each film layer structure of display includes organic light-emitting diodes
Pipe, then the step of each film layer structure forming display on the cushion of described substrate specifically includes:
The cushion of described substrate is formed Organic Light Emitting Diode, the hearth electrode of described Organic Light Emitting Diode and institute
State buffer layer contacts to arrange.
The organic light-emitting diode display substrate formed by above-mentioned steps, the hearth electrode contact of Organic Light Emitting Diode sets
Put on the cushion of substrate, it is possible to form described hearth electrode in high temperature environments, it is ensured that hearth electrode has the performance of excellence.
Further, after each sub-cushion forming described cushion, use the surface of ion beam antithetical phrase cushion
Process, it is possible to increase the effective surface area of buffer-layer surface, strengthen the interlocking between cushion and bottom electrode interface, increase
Add the adhesion of cushion and hearth electrode so that hearth electrode is difficult to from substrate peel off, and improves the buckle resistance of display base plate.With
Time, owing to, after Ion Beam Treatment, there is the interaction between electric dipole in the interface of cushion and hearth electrode, it is possible to promote
Hearth electrode forms polycrystalline state, improves the electric conductivity of hearth electrode.
As for substrate and manufacturing process thereof, may refer to the description in embodiment one, be not described in detail in this.
Embodiment four
Thering is provided a kind of electronic device in the present embodiment, described electronic device can be touch screen, display device, solar-electricity
Ponds etc., described electronic device uses the substrate in embodiment one, improves the quality of forming film of each functional film layer of electronic device, protects
Demonstrate,prove the performance of electronic device, and reduce the generation of stress in thin films.
Concrete, for display device, it also includes each film layer of the display being arranged on the cushion of described substrate
Structure.Owing to the setting of cushion improves the thermostability of substrate such that it is able to make each film of display in high temperature environments
Rotating fields, it is ensured that each film layer structure has the performance of excellence, especially ensures the film layer structure that the buffer layer contacts with substrate is arranged
There is the performance of excellence.Meanwhile, also reduce the generation of stress in thin films, improve the quality of display product.
Described display device is: liquid crystal display device, OLED display device, Electronic Paper, mobile phone, panel computer, television set
Any product with display function or the parts such as notebook computer, DPF, navigator.
For solaode, it also includes that transparent front electrode, described front electrode contact are arranged on the slow of described substrate
Rush on layer such that it is able to form described front electrode in high temperature environments, it is ensured that front electrode has the performance of excellence, and reduces thin film
The generation of internal stress, improves the quality of solaode.Then on described front electrode, it is sequentially prepared electron transfer layer, photosensitive
Layer, hole transmission layer and back electrode etc..
Certainly, technical scheme applies also for other electronic devices, will not enumerate at this.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For Yuan, on the premise of without departing from the technology of the present invention principle, it is also possible to make some improvement and replacement, these improve and replace
Also should be regarded as protection scope of the present invention.
Claims (17)
1. the manufacture method of a substrate, it is characterised in that the surface being included in a substrate forms the step of cushion, is formed slow
The step rushing layer includes:
Form sub-cushion on the surface of described substrate, and described sub-cushion is carried out cooling process；
Repeat the above steps, forms many sub-cushions, by cushion described in the plurality of sub-cushion stratification, described slow
Rush the thermal coefficient of expansion thermal coefficient of expansion less than described substrate of layer.
Manufacture method the most according to claim 1, it is characterised in that described sub-cushion is carried out the step of cooling process
Particularly as follows:
Use ion beam that the surface of described sub-cushion is processed.
Manufacture method the most according to claim 2, it is characterised in that specifically use Ar+Ion beam is to described sub-cushion
Surface processes.
Manufacture method the most according to claim 1, it is characterised in that form described son by magnetron sputtering film-forming process and delay
Rush layer.
5. according to the manufacture method described in any one of claim 1-4, it is characterised in that the material of described cushion selects SiO2、
TiO2、CeO2In one.
6. according to the manufacture method described in any one of claim 1-4, it is characterised in that described substrate is flexible substrate.
Manufacture method the most according to claim 6, it is characterised in that the material of described flexible substrate select PET, PC,
One in PEN, PI.
8. the manufacture method of a transparent conductive substrate, it is characterised in that use the manufacture method described in claim 1-7 to be formed
Substrate, forms transparency conducting layer on the cushion of described substrate.
9. the manufacture method of a display base plate, it is characterised in that including:
The manufacture method described in claim 1-7 is used to form substrate；
The cushion of described substrate is formed each film layer structure of display.
Manufacture method the most according to claim 9, it is characterised in that described display base plate is that Organic Light Emitting Diode shows
Show substrate；
The step of each film layer structure forming display on the cushion of described substrate specifically includes:
Forming Organic Light Emitting Diode on the cushion of described substrate, the hearth electrode of described Organic Light Emitting Diode is slow with described
Rush layer contact to arrange.
11. 1 kinds of substrates, it is characterised in that using the manufacture method described in claim 1-7 to prepare, described substrate includes substrate
Arranging cushion over the substrate with contacting, described cushion includes the sub-cushion that multiple stacking is arranged, described buffering
The thermal coefficient of expansion of layer is less than the thermal coefficient of expansion of described substrate.
12. substrates according to claim 11, it is characterised in that the consistency of thickness of the plurality of sub-cushion.
13. 1 kinds of transparent conductive substrates, it is characterised in that including:
Substrate as described in claim 11 or 12；
It is formed at the transparency conducting layer on the cushion of described substrate.
14. 1 kinds of display base plates, it is characterised in that including:
Substrate as described in claim 11 or 12；
Each film layer structure of the display being arranged on the cushion of described substrate.
15. 1 kinds of electronic devices, it is characterised in that use the substrate described in claim 11 or 12.
16. electronic devices according to claim 15, it is characterised in that described electronic device is display base plate, also includes
Each film layer structure of the display being arranged on the cushion of described substrate.
17. electronic devices according to claim 15, it is characterised in that described electronic device is solaode, also wraps
Including transparent front electrode, described front electrode contact is arranged on the cushion of described substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610675157.3A CN106222619A (en) | 2016-08-16 | 2016-08-16 | A kind of substrate, substrate and preparation method thereof, electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610675157.3A CN106222619A (en) | 2016-08-16 | 2016-08-16 | A kind of substrate, substrate and preparation method thereof, electronic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106222619A true CN106222619A (en) | 2016-12-14 |
Family
ID=57552716
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610675157.3A Pending CN106222619A (en) | 2016-08-16 | 2016-08-16 | A kind of substrate, substrate and preparation method thereof, electronic device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106222619A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106783934A (en) * | 2017-01-06 | 2017-05-31 | 昆山工研院新型平板显示技术中心有限公司 | Film forming method and oled panel forming method |
| CN109166786A (en) * | 2018-07-26 | 2019-01-08 | 信利半导体有限公司 | A kind of coating process of flexibility TFT substrate |
| WO2019206216A1 (en) * | 2018-04-25 | 2019-10-31 | 京东方科技集团股份有限公司 | Pre-stretched substrate and manufacturing method thereof, and electronic component and manufacturing method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101017855A (en) * | 2006-12-25 | 2007-08-15 | 刘津平 | Photoelectricity conversion device and its making method |
| CN102651309A (en) * | 2012-04-09 | 2012-08-29 | 中国电子科技集团公司第五十五研究所 | Structure and preparation method of low-cost wide bandgap single crystal film |
| CN103296164A (en) * | 2013-05-30 | 2013-09-11 | 光垒光电科技（上海）有限公司 | Semiconductor light-emitting structure |
| CN103500745A (en) * | 2013-09-25 | 2014-01-08 | 京东方科技集团股份有限公司 | Flexible display substrate and preparation method thereof as well as flexible display device |
| CN103531683A (en) * | 2013-09-23 | 2014-01-22 | 华灿光电股份有限公司 | Gallium nitride light emitting diode and preparation method thereof |
| CN104637438A (en) * | 2013-11-06 | 2015-05-20 | 三星显示有限公司 | Flexible display and manufacturing method thereof |
| CN105575998A (en) * | 2014-10-31 | 2016-05-11 | 乐金显示有限公司 | Organic light emitting display device and method for manufacturing the same |
-
2016
- 2016-08-16 CN CN201610675157.3A patent/CN106222619A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101017855A (en) * | 2006-12-25 | 2007-08-15 | 刘津平 | Photoelectricity conversion device and its making method |
| CN102651309A (en) * | 2012-04-09 | 2012-08-29 | 中国电子科技集团公司第五十五研究所 | Structure and preparation method of low-cost wide bandgap single crystal film |
| CN103296164A (en) * | 2013-05-30 | 2013-09-11 | 光垒光电科技（上海）有限公司 | Semiconductor light-emitting structure |
| CN103531683A (en) * | 2013-09-23 | 2014-01-22 | 华灿光电股份有限公司 | Gallium nitride light emitting diode and preparation method thereof |
| CN103500745A (en) * | 2013-09-25 | 2014-01-08 | 京东方科技集团股份有限公司 | Flexible display substrate and preparation method thereof as well as flexible display device |
| CN104637438A (en) * | 2013-11-06 | 2015-05-20 | 三星显示有限公司 | Flexible display and manufacturing method thereof |
| CN105575998A (en) * | 2014-10-31 | 2016-05-11 | 乐金显示有限公司 | Organic light emitting display device and method for manufacturing the same |
Non-Patent Citations (4)
| Title |
|---|
| 刘银春: "《平板显示技术基础》", 31 August 2013, 浙江大学出版社 * |
| 史保华等: "《材料微分析技术》", 30 June 1991, 西安电子科技大学出版社 * |
| 张通和等: "《离子注入表面优化技术》", 31 December 1993, 冶金工业出版社 * |
| 李景镇: "《光学手册 上卷》", 31 July 2010, 陕西科学技术出版社 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106783934A (en) * | 2017-01-06 | 2017-05-31 | 昆山工研院新型平板显示技术中心有限公司 | Film forming method and oled panel forming method |
| WO2019206216A1 (en) * | 2018-04-25 | 2019-10-31 | 京东方科技集团股份有限公司 | Pre-stretched substrate and manufacturing method thereof, and electronic component and manufacturing method thereof |
| US11315962B2 (en) | 2018-04-25 | 2022-04-26 | Boe Technology Group Co., Ltd. | Pre-stretched substrate and method for manufacturing the same, electronic device and method for manufacturing the same |
| CN109166786A (en) * | 2018-07-26 | 2019-01-08 | 信利半导体有限公司 | A kind of coating process of flexibility TFT substrate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9711664B2 (en) | Flexible transparent solar cell and production process of the same | |
| CN105449010B (en) | Stainless steel lining bottom flexible CIGS thin-film solar cell barrier layer preparation method | |
| CN106601382B (en) | A kind of preparation method of flexible transparent conducting film | |
| CN102938262A (en) | Transparent conducting thin film and preparation method thereof | |
| JP5796202B2 (en) | Transparent electrode and manufacturing method thereof | |
| CN103606535B (en) | The manufacture method of flexible display assembly and the flexible display assembly of making thereof | |
| KR101145916B1 (en) | Method for manufacturing flexible multilayer transparent eletrode | |
| CN106222619A (en) | A kind of substrate, substrate and preparation method thereof, electronic device | |
| KR20090070471A (en) | Conductive glass for dye sensitive solar cell and method of preparing the same | |
| CN103107286A (en) | Method of producing imaged indium tin oxides (ITO) electrode with non-photoetching technology | |
| CN204189776U (en) | A kind of support plate for PVD sputtering | |
| CN204884600U (en) | A flexible conductive film of ITO for intelligent light -adjusting glass | |
| KR20150048944A (en) | Flexible transparent electrode and manufacturing method thereof | |
| CN103367479A (en) | Conducting substrate of flexible solar cell texture and preparation method thereof | |
| CN108766627A (en) | A kind of silver nanoparticle mesh flexible transparent electrode and preparation method thereof | |
| CN102195006A (en) | Flexible electrode based on AZO/graphene/AZO structure and preparation method thereof | |
| CN102544388B (en) | Flexible electrode based on carbon nano tube/ silver/ zinc aluminium oxide structure | |
| CN109817393A (en) | A method of preparing network transparent conductive film | |
| CN109346211B (en) | Composite structure transparent conductive film | |
| CN106328252A (en) | Silver nanowire conducting transparent film and manufacture method thereof | |
| CN203157263U (en) | Transparent conductive oxide (TCO) glass | |
| CN108183000A (en) | A kind of preparation method of multi-layer transparent electroconductive film resistant to bending | |
| CN103187481A (en) | Conductive substrate, method for manufacturing same, and solar cell | |
| TW201242039A (en) | Power-generating module with solar cell and method for fabricating the same | |
| CN101752463B (en) | Method for manufacturing thin film type solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161214 |
|
| RJ01 | Rejection of invention patent application after publication |