CN113245306A - Plasma cleaning method of GaN microwave chip - Google Patents
Plasma cleaning method of GaN microwave chip Download PDFInfo
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- CN113245306A CN113245306A CN202110498143.XA CN202110498143A CN113245306A CN 113245306 A CN113245306 A CN 113245306A CN 202110498143 A CN202110498143 A CN 202110498143A CN 113245306 A CN113245306 A CN 113245306A
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- 238000004140 cleaning Methods 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 15
- 239000012459 cleaning agent Substances 0.000 claims abstract description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 24
- 238000007599 discharging Methods 0.000 claims description 12
- 238000001035 drying Methods 0.000 claims description 12
- 238000011084 recovery Methods 0.000 claims description 12
- 239000002912 waste gas Substances 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 238000005086 pumping Methods 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 4
- 239000002245 particle Substances 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
Abstract
The invention discloses a plasma cleaning method of a GaN microwave chip, and relates to the technical field of microwave chip manufacturing. A plasma cleaning method of a GaN microwave chip mainly comprises the following steps: the method comprises the following steps: placing the GaN microwave chip into a cleaning tank containing a cleaning agent, and pre-cleaning the GaN microwave chip by using ultrasonic cleaning equipment; step two: putting the pre-cleaned GaN microwave chip into a vacuum chamber, and vacuumizing the vacuum chamber by using a vacuum pump, wherein the air pressure in the vacuum chamber is kept at 13.3-53.2 Pa; step three: introducing a source gas into the vacuum chamber; step four: high-frequency voltage is connected to the cathode and the anode in the vacuum chamber. According to the invention, by carrying out ultrasonic pre-cleaning before plasma cleaning, large particle substances on the surface of the chip can be removed, and then the chip can be cleaned by using plasma equipment, and a compact film can be formed only by 15-30 times when plasma cleaning is carried out after pre-cleaning.
Description
Technical Field
The invention relates to the technical field of microwave chip manufacturing, in particular to a plasma cleaning method of a GaN microwave chip.
Background
In the application process of the 5G communication technology, a GaN microwave chip is required to be used as a carrier, and the GaN microwave chip is required to be subjected to plasma cleaning in the production process, wherein the plasma is one state of a substance, also called as a fourth state of the substance, and is not common solid-liquid-gas tri-state. Sufficient energy is applied to the gas to ionize it into a plasma state. The "active" components of the plasma include: ions, electrons, atoms, active groups, excited species (metastable), photons, etc., plasma cleaning is the treatment of a sample surface by exploiting the properties of these active components for purposes of cleaning, coating, etc.
The number of chips which can be cleaned by one time by the existing plasma cleaning method is small, the single cleaning needs longer time and usually needs 1-2 minutes, and the working efficiency is low.
Disclosure of Invention
The present invention is directed to a plasma cleaning method for a GaN microwave chip to solve the above problems.
In order to achieve the purpose, the invention provides the following technical scheme: a plasma cleaning method of a GaN microwave chip mainly comprises the following steps:
the method comprises the following steps: placing the GaN microwave chip into a cleaning tank containing a cleaning agent, pre-cleaning the GaN microwave chip by using ultrasonic cleaning equipment, and drying the GaN microwave chip;
step two: putting the pre-cleaned GaN microwave chip into a vacuum chamber, performing vacuum pumping operation on the vacuum chamber by using a vacuum pump, and continuously performing vacuum pumping for a period of time to ensure that the air pressure in the vacuum chamber is kept at 13.3-53.2 Pa;
step three: introducing a raw material gas into the vacuum chamber so that the pressure inside the vacuum chamber is increased to 106.4-133.3 Pa;
step four: high-frequency voltage is connected to the cathode and the anode in the vacuum chamber, the GaN microwave chip is ensured to be 0-5-0.8 cm away from the cathode, and power supply is stopped after continuous power supply for 15-30 seconds;
step five: and introducing air into the vacuum chamber to atmospheric pressure, discharging the waste gas, uniformly recovering, and taking out the GaN microwave chip to complete recovery.
Furthermore, the cleaning agent in the first step is isopropanol, and the working frequency of the ultrasonic cleaning machine is 60-120 KHz.
Furthermore, the vacuumizing time in the second step is controlled to be 2-3 minutes, the vacuum chamber is internally provided with electrodes, and the GaN microwave chip is positioned in the region between the electrodes.
Further, the raw material gas in the third step is one of oxygen, hydrogen, argon and nitrogen.
Furthermore, the voltage frequency of the high-frequency voltage in the fourth step is 1.2-2.4KHz, and the voltage value is 6690-8680V.
Further, the ambient temperature inside the vacuum chamber in the first step is controlled to be between 4 and 10 ℃.
Compared with the prior art, the invention has the beneficial effects that:
(1) according to the plasma cleaning method of the GaN microwave chip, the ultrasonic waves are used for carrying out batch pre-cleaning before the plasma cleaning of the chip, large-batch particle substances on the surface of the chip can be removed, the plasma equipment is used for cleaning in turn, only 15-30 parts of compact thin film can be formed when the plasma cleaning is carried out after the pre-cleaning, and the overall production efficiency is improved.
(2) According to the plasma cleaning method of the GaN microwave chip, the GaN microwave chip is placed in the area 0.5-0.8 cm away from the cathode, and the chip is cleaned through the high-density ion density in the area, so that the effect of reducing the cleaning time is realized.
Drawings
FIG. 1 is a graph of distance versus ion density at a voltage 8680V and a frequency of 120 KHz;
FIG. 2 is a distance-ion density plot at a frequency of 60KHz at a voltage of 6690V.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The first embodiment is as follows:
a plasma cleaning method of a GaN microwave chip comprises the following steps:
placing the GaN microwave chip into a cleaning tank containing isopropanol, pre-cleaning the GaN microwave chip by using ultrasonic cleaning equipment, and drying the GaN microwave chip; putting the pre-cleaned GaN microwave chip into a vacuum chamber, and vacuumizing the vacuum chamber by using a vacuum pump for 3 minutes continuously to ensure that the air pressure in the vacuum chamber is kept at 13.3 Pa; introducing oxygen into the vacuum chamber to raise the pressure inside the vacuum chamber to 106.4 Pa; voltage 6690V with frequency of 60KHz is connected to the cathode and anode in the vacuum chamber to ensure that the GaN microwave chip is 0.6 + -0.1 cm away from the cathode, and power supply is stopped after 15 seconds; and introducing air into the vacuum chamber to atmospheric pressure, discharging the waste gas, uniformly recovering, and taking out the GaN microwave chip to complete recovery.
Example two:
a plasma cleaning method of a GaN microwave chip comprises the following steps:
placing the GaN microwave chip into a cleaning tank containing isopropanol, pre-cleaning the GaN microwave chip by using ultrasonic cleaning equipment, and drying the GaN microwave chip; putting the pre-cleaned GaN microwave chip into a vacuum chamber, and vacuumizing the vacuum chamber by using a vacuum pump for 3 minutes continuously to ensure that the air pressure in the vacuum chamber is kept at 13.3 Pa; introducing hydrogen into the vacuum chamber to raise the pressure inside the vacuum chamber to 106.4 Pa; voltage 6690V with frequency of 60KHz is connected to the cathode and anode in the vacuum chamber to ensure that the GaN microwave chip is 0.6 + -0.1 cm away from the cathode, and power supply is stopped after 15 seconds; and introducing air into the vacuum chamber to atmospheric pressure, discharging the waste gas, uniformly recovering, and taking out the GaN microwave chip to complete recovery.
Example three:
a plasma cleaning method of a GaN microwave chip comprises the following steps:
placing the GaN microwave chip into a cleaning tank containing isopropanol, pre-cleaning the GaN microwave chip by using ultrasonic cleaning equipment, and drying the GaN microwave chip; putting the pre-cleaned GaN microwave chip into a vacuum chamber, and vacuumizing the vacuum chamber by using a vacuum pump for 3 minutes continuously to ensure that the air pressure in the vacuum chamber is kept at 13.3 Pa; introducing argon into the vacuum chamber to increase the internal pressure of the vacuum chamber to 106.4 Pa; voltage 6690V with frequency of 60KHz is connected to the cathode and anode in the vacuum chamber to ensure that the GaN microwave chip is 0.6 + -0.1 cm away from the cathode, and power supply is stopped after 15 seconds; and introducing air into the vacuum chamber to atmospheric pressure, discharging the waste gas, uniformly recovering, and taking out the GaN microwave chip to complete recovery.
Example four:
a plasma cleaning method of a GaN microwave chip comprises the following steps:
placing the GaN microwave chip into a cleaning tank containing isopropanol, pre-cleaning the GaN microwave chip by using ultrasonic cleaning equipment, and drying the GaN microwave chip; putting the pre-cleaned GaN microwave chip into a vacuum chamber, and vacuumizing the vacuum chamber by using a vacuum pump for 3 minutes continuously to ensure that the air pressure in the vacuum chamber is kept at 13.3 Pa; introducing nitrogen into the vacuum chamber to increase the pressure in the vacuum chamber to 106.4 Pa; voltage 6690V with frequency of 60KHz is connected to the cathode and anode in the vacuum chamber to ensure that the GaN microwave chip is 0.6 + -0.1 cm away from the cathode, and power supply is stopped after 15 seconds; and introducing air into the vacuum chamber to atmospheric pressure, discharging the waste gas, uniformly recovering, and taking out the GaN microwave chip to complete recovery.
Example five:
a plasma cleaning method of a GaN microwave chip comprises the following steps:
placing the GaN microwave chip into a cleaning tank containing isopropanol, pre-cleaning the GaN microwave chip by using ultrasonic cleaning equipment, and drying the GaN microwave chip; putting the pre-cleaned GaN microwave chip into a vacuum chamber, and vacuumizing the vacuum chamber by using a vacuum pump for 2 minutes continuously to ensure that the air pressure in the vacuum chamber is kept at 53.2 Pa; introducing oxygen into the vacuum chamber to raise the pressure inside the vacuum chamber to 133.3 Pa; the voltage 8680V and the voltage with the frequency of 120KHz are connected to the cathode and the anode in the vacuum chamber, the GaN microwave chip is ensured to be 0.6 +/-0.1 cm away from the cathode, and the power supply is stopped after the power supply is continuously carried out for 30 seconds; and introducing air into the vacuum chamber to atmospheric pressure, discharging the waste gas, uniformly recovering, and taking out the GaN microwave chip to complete recovery.
Example six:
a plasma cleaning method of a GaN microwave chip comprises the following steps:
placing the GaN microwave chip into a cleaning tank containing isopropanol, pre-cleaning the GaN microwave chip by using ultrasonic cleaning equipment, and drying the GaN microwave chip; putting the pre-cleaned GaN microwave chip into a vacuum chamber, and vacuumizing the vacuum chamber by using a vacuum pump for 2 minutes continuously to ensure that the air pressure in the vacuum chamber is kept at 53.2 Pa; introducing hydrogen into the vacuum chamber to raise the pressure inside the vacuum chamber to 133.3 Pa; the voltage 8680V and the voltage with the frequency of 120KHz are connected to the cathode and the anode in the vacuum chamber, the GaN microwave chip is ensured to be 0.6 +/-0.1 cm away from the cathode, and the power supply is stopped after the power supply is continuously carried out for 30 seconds; and introducing air into the vacuum chamber to atmospheric pressure, discharging the waste gas, uniformly recovering, and taking out the GaN microwave chip to complete recovery.
Example seven:
a plasma cleaning method of a GaN microwave chip comprises the following steps:
placing the GaN microwave chip into a cleaning tank containing isopropanol, pre-cleaning the GaN microwave chip by using ultrasonic cleaning equipment, and drying the GaN microwave chip; putting the pre-cleaned GaN microwave chip into a vacuum chamber, and vacuumizing the vacuum chamber by using a vacuum pump for 2 minutes continuously to ensure that the air pressure in the vacuum chamber is kept at 53.2 Pa; introducing argon gas into the vacuum chamber to raise the pressure inside the vacuum chamber to 133.3 Pa; the voltage 8680V and the voltage with the frequency of 120KHz are connected to the cathode and the anode in the vacuum chamber, the GaN microwave chip is ensured to be 0.6 +/-0.1 cm away from the cathode, and the power supply is stopped after the power supply is continuously carried out for 30 seconds; and introducing air into the vacuum chamber to atmospheric pressure, discharging the waste gas, uniformly recovering, and taking out the GaN microwave chip to complete recovery.
Example eight:
a plasma cleaning method of a GaN microwave chip comprises the following steps:
placing the GaN microwave chip into a cleaning tank containing isopropanol, pre-cleaning the GaN microwave chip by using ultrasonic cleaning equipment, and drying the GaN microwave chip; putting the pre-cleaned GaN microwave chip into a vacuum chamber, and vacuumizing the vacuum chamber by using a vacuum pump for 2 minutes continuously to ensure that the air pressure in the vacuum chamber is kept at 53.2 Pa; introducing nitrogen into the vacuum chamber to raise the pressure inside the vacuum chamber to 133.3 Pa; the voltage 8680V and the voltage with the frequency of 120KHz are connected to the cathode and the anode in the vacuum chamber, the GaN microwave chip is ensured to be 0.6 +/-0.1 cm away from the cathode, and the power supply is stopped after the power supply is continuously carried out for 30 seconds; and introducing air into the vacuum chamber to atmospheric pressure, discharging the waste gas, uniformly recovering, and taking out the GaN microwave chip to complete recovery.
Comparative example one:
a plasma cleaning method of a GaN microwave chip comprises the following steps:
placing the GaN microwave chip into a cleaning tank containing isopropanol, pre-cleaning the GaN microwave chip by using ultrasonic cleaning equipment, and drying the GaN microwave chip; putting the pre-cleaned GaN microwave chip into a vacuum chamber, and vacuumizing the vacuum chamber by using a vacuum pump for 3 minutes continuously to ensure that the air pressure in the vacuum chamber is kept at 13.3 Pa; introducing air into the vacuum chamber to make the air pressure inside the vacuum chamber rise to 106.4 Pa; voltage 6690V with frequency of 60KHz is connected to the cathode and anode in the vacuum chamber to ensure that the GaN microwave chip is 0.6 + -0.1 cm away from the cathode, and power supply is stopped after 15 seconds; and introducing air into the vacuum chamber to atmospheric pressure, discharging the waste gas, uniformly recovering, and taking out the GaN microwave chip to complete recovery.
Comparative example two:
a plasma cleaning method of a GaN microwave chip comprises the following steps:
placing the GaN microwave chip into a cleaning tank containing isopropanol, pre-cleaning the GaN microwave chip by using ultrasonic cleaning equipment, and drying the GaN microwave chip; putting the pre-cleaned GaN microwave chip into a vacuum chamber, and vacuumizing the vacuum chamber by using a vacuum pump for 2 minutes continuously to ensure that the air pressure in the vacuum chamber is kept at 53.2 Pa; introducing air into the vacuum chamber to raise the pressure inside the vacuum chamber to 133.3 Pa; the voltage 8680V and the voltage with the frequency of 120KHz are connected to the cathode and the anode in the vacuum chamber, the GaN microwave chip is ensured to be 0.6 +/-0.1 cm away from the cathode, and the power supply is stopped after the power supply is continuously carried out for 30 seconds; and introducing air into the vacuum chamber to atmospheric pressure, discharging the waste gas, uniformly recovering, and taking out the GaN microwave chip to complete recovery.
Experimental procedures according to examples one to four and comparative example one record the effect of different gas species on the ion density distribution under otherwise identical conditions to give fig. 1.
Experimental procedures according to examples five to eight and comparative example two record the effect of different gas species on the ion density distribution under otherwise identical conditions under another condition parameter to obtain figure 2.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. A plasma cleaning method of a GaN microwave chip is characterized in that: the method mainly comprises the following steps:
the method comprises the following steps: placing the GaN microwave chip into a cleaning tank containing a cleaning agent, pre-cleaning the GaN microwave chip by using ultrasonic cleaning equipment, and drying the GaN microwave chip;
step two: putting the pre-cleaned GaN microwave chip into a vacuum chamber, performing vacuum pumping operation on the vacuum chamber by using a vacuum pump, and continuously performing vacuum pumping for a period of time to ensure that the air pressure in the vacuum chamber is kept at 13.3-53.2 Pa;
step three: introducing a raw material gas into the vacuum chamber so that the pressure inside the vacuum chamber is increased to 106.4-133.3 Pa;
step four: high-frequency voltage is connected to the cathode and the anode in the vacuum chamber, the GaN microwave chip is ensured to be 0-5-0.8 cm away from the cathode, and power supply is stopped after continuous power supply for 15-30 seconds;
step five: and introducing air into the vacuum chamber to atmospheric pressure, discharging the waste gas, uniformly recovering, and taking out the GaN microwave chip to complete recovery.
2. The plasma cleaning method of the GaN microwave chip as claimed in claim 1, wherein: the cleaning agent in the first step is isopropanol, and the working frequency of the ultrasonic cleaning machine is 60-120 KHz.
3. The plasma cleaning method of the GaN microwave chip as claimed in claim 1, wherein: and the vacuumizing time in the second step is controlled to be 2-3 minutes, electrodes are arranged in the vacuum chamber, and the GaN microwave chip is positioned in the region between the electrodes.
4. The plasma cleaning method of the GaN microwave chip as claimed in claim 1, wherein: and the raw material gas in the third step is one of oxygen, hydrogen, argon and nitrogen.
5. The plasma cleaning method of the GaN microwave chip as claimed in claim 1, wherein: the voltage frequency of the high-frequency voltage in the fourth step is 1.2-2.4KHz, and the voltage value is 6690-8680V.
6. The plasma cleaning method of the GaN microwave chip as claimed in claim 1, wherein: and controlling the ambient temperature inside the vacuum chamber in the first step to be 4-10 ℃.
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| CN202110498143.XA CN113245306A (en) | 2021-05-08 | 2021-05-08 | Plasma cleaning method of GaN microwave chip |
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|---|---|---|---|---|
| US20030047191A1 (en) * | 2000-04-25 | 2003-03-13 | Lianjun Liu | Method and apparatus for plasma cleaning of workpieces |
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-
2021
- 2021-05-08 CN CN202110498143.XA patent/CN113245306A/en active Pending
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| US20030047191A1 (en) * | 2000-04-25 | 2003-03-13 | Lianjun Liu | Method and apparatus for plasma cleaning of workpieces |
| CN105112866A (en) * | 2015-08-26 | 2015-12-02 | 西派集团有限公司 | Production process for abrasion-resistant thermocouple |
| JP2019048255A (en) * | 2017-09-08 | 2019-03-28 | 大同特殊鋼株式会社 | Cleaning method and cleaning device for metal chip |
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| Title |
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