CN113228323B - 多结器件的生产方法 - Google Patents

多结器件的生产方法 Download PDF

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Publication number
CN113228323B
CN113228323B CN201980084620.9A CN201980084620A CN113228323B CN 113228323 B CN113228323 B CN 113228323B CN 201980084620 A CN201980084620 A CN 201980084620A CN 113228323 B CN113228323 B CN 113228323B
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formula
layer
cations
perovskite
compound
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CN113228323A (zh
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亨利·詹姆斯·施耐德
戴维·P·迈克米金
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Oxford Photovoltaics Ltd
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Oxford University Innovation Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CN201980084620.9A 2018-10-22 2019-10-18 多结器件的生产方法 Active CN113228323B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1817166.0A GB201817166D0 (en) 2018-10-22 2018-10-22 Multi-junction device production process
GB1817166.0 2018-10-22
PCT/GB2019/052988 WO2020084285A1 (en) 2018-10-22 2019-10-18 Multi-junction device production process

Publications (2)

Publication Number Publication Date
CN113228323A CN113228323A (zh) 2021-08-06
CN113228323B true CN113228323B (zh) 2025-02-11

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US (1) US20210399246A1 (enExample)
EP (1) EP3871279B1 (enExample)
JP (1) JP7561121B2 (enExample)
KR (1) KR102920200B1 (enExample)
CN (1) CN113228323B (enExample)
GB (1) GB201817166D0 (enExample)
WO (1) WO2020084285A1 (enExample)

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KR102129200B1 (ko) * 2019-03-08 2020-07-02 서울대학교산학협력단 적층 구조의 페로브스카이트 발광층을 포함하는 발광 소자 및 이의 제조 방법
CN110299451B (zh) * 2019-06-26 2023-04-07 合肥工业大学 一种柔性钙钛矿-铜铟镓硒叠层太阳能电池及其制备方法
CN110783459A (zh) * 2019-10-31 2020-02-11 深圳市华星光电半导体显示技术有限公司 膜层制作方法及发光器件
CN111382508B (zh) * 2020-03-04 2024-04-26 西安理工大学 基于数据模型的半导体器件物理可视化仿真平台设计方法
EP3916819A1 (en) * 2020-05-29 2021-12-01 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk Onderzoek TNO Perovskite layer
JP2021193722A (ja) * 2020-06-09 2021-12-23 大阪ガスケミカル株式会社 光電変換薄膜素子およびその製造方法
US20210388009A1 (en) * 2020-06-10 2021-12-16 Nanyang Technological University Organic metal-halide perovskite precursor, process for production and use thereof
CN111816774B (zh) * 2020-07-17 2022-08-16 南京理工大学 一种可见/红外光谱可切换双频探测成像的钙钛矿器件
CN112670423A (zh) * 2020-12-21 2021-04-16 南京大学 一种可发白光的钙钛矿发光二极管及其制备方法和发光装置
EP4302336A4 (en) * 2021-03-04 2024-11-06 Commonwealth Scientific and Industrial Research Organisation METHOD FOR PRODUCING AN ELECTRODE CONNECTION IN AN INTEGRATED MULTILAYER ELECTRONIC THIN FILM DEVICE
GB202114040D0 (en) * 2021-09-30 2021-11-17 Oxford Photovoltaics Ltd Perovskite materials and their use in photocoltaic devices
CN116998239A (zh) * 2021-12-23 2023-11-03 宁德时代新能源科技股份有限公司 A/m/x晶体材料、光伏器件及其制备方法
US20230247853A1 (en) * 2022-01-28 2023-08-03 The Florida State University Research Foundation, Inc. Composite Materials, Devices, and Methods of Encapsulating Perovskites
CN115799359A (zh) * 2022-12-13 2023-03-14 浙江晶科能源有限公司 太阳能电池及叠层太阳能电池
CN116426164B (zh) * 2023-04-08 2024-08-23 上海应用技术大学 一种水致变色的铜基钙钛矿材料的防伪应用
CN116648121B (zh) * 2023-07-26 2023-10-13 长春理工大学 垂直钙钛矿异质结薄膜及其连续大面积制备方法和应用
JP2025023385A (ja) * 2023-08-04 2025-02-17 富士通商株式会社 単層カーボンナノチューブを透明導電性電極としたペロブスカイト太陽電池とその製造方法
CN121890291A (zh) * 2023-09-21 2026-04-17 株式会社钟化 钙钛矿前体液、太阳能电池制造方法和太阳能电池
CN119923071A (zh) * 2023-10-31 2025-05-02 宁德时代新能源科技股份有限公司 基于钙钛矿的叠层太阳能电池、制备方法和用电装置
FR3155668A1 (fr) * 2023-11-17 2025-05-23 Electricite De France Assemblage photovoltaique multi jonctions autoreparable et procede d’autoreparation d’un tel assemblage
WO2025199279A1 (en) * 2024-03-20 2025-09-25 Northwestern University Perovskite solar cells with dual site binding ligands
CN118382304B (zh) * 2024-04-30 2025-04-08 深圳现象光伏科技有限公司 宽带隙钙钛矿太阳能电池及叠层电池、用电装置
KR102919668B1 (ko) * 2024-12-31 2026-01-28 한화솔루션 주식회사 탠덤 태양전지 및 이의 제조방법
CN120882280A (zh) * 2025-09-26 2025-10-31 仁烁光能(苏州)有限公司 一种隧穿互联层结构及其制备方法

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Publication number Publication date
KR102920200B1 (ko) 2026-01-29
EP3871279A1 (en) 2021-09-01
EP3871279B1 (en) 2026-04-01
US20210399246A1 (en) 2021-12-23
KR20210080492A (ko) 2021-06-30
JP2022505477A (ja) 2022-01-14
WO2020084285A1 (en) 2020-04-30
GB201817166D0 (en) 2018-12-05
CN113228323A (zh) 2021-08-06
JP7561121B2 (ja) 2024-10-03

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