CN113224149B - Novel reverse conducting IGBT device with embedded channel diode - Google Patents
Novel reverse conducting IGBT device with embedded channel diode Download PDFInfo
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- CN113224149B CN113224149B CN202110509714.5A CN202110509714A CN113224149B CN 113224149 B CN113224149 B CN 113224149B CN 202110509714 A CN202110509714 A CN 202110509714A CN 113224149 B CN113224149 B CN 113224149B
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- 239000004065 semiconductor Substances 0.000 abstract description 3
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
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Abstract
The invention relates to the technical field of semiconductor power devices, in particular to a novel reverse conducting type IGBT device with an embedded channel diode, which comprises an emitting electrode metal electrode, a grid oxide, an IGBT polysilicon gate and a channel diode polysilicon gate, wherein the emitting electrode metal electrode comprises a connecting part and two convex parts, the connecting part is in a flat plate shape, the two convex parts are integrally formed at two ends of the connecting part, the two convex parts are positioned at two ends of the grid oxide, the grid oxide is arranged between the connecting part and the two convex parts and is respectively connected with the connecting part and the two convex parts, and the IGBT polysilicon gate and the channel diode polysilicon gate are arranged on the surface of the grid oxide at intervals. According to the novel reverse conducting IGBT device with the embedded trench diode, the polysilicon gate of the trench diode is arranged, so that the reverse recovery characteristic is obviously improved, the gate charge characteristic is reduced, the switching characteristic is improved, and the power loss is greatly reduced.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to the technical field of semiconductor power devices, in particular to a novel reverse conducting IGBT device with an embedded channel diode.
[ background of the invention ]
The reverse conducting IGBT is a novel IGBT device in the world at present, and IGBT cells and an FRD structure are combined together to obtain reverse conducting capacity, so that the reverse conducting IGBT device has great advantages in cost and performance and gradually becomes the key point of the research of the field of the IGBT.
However, some reverse conducting IGBT devices on the market have poor reverse recovery characteristics and poor gate charge characteristics, and are not favorable for further development of the performance of the reverse conducting IGBT.
Therefore, the prior art is not sufficient and needs to be improved.
[ summary of the invention ]
In order to overcome the technical problems, the invention provides a novel reverse conducting IGBT device with an embedded channel diode.
The invention provides a novel reverse conducting type IGBT device with an embedded channel diode, which comprises an emitting electrode metal electrode, a grid oxide, an IGBT polysilicon gate and a channel diode polysilicon gate, wherein the emitting electrode metal electrode comprises a connecting part and two convex parts, the connecting part is in a flat plate shape, the two convex parts are integrally formed at two ends of the connecting part, the two convex parts are positioned at two ends of the grid oxide, the grid oxide is arranged between the connecting part and the two convex parts and is respectively connected with the connecting part and the two convex parts, and the IGBT polysilicon gate and the channel diode polysilicon gate are arranged on the surface of the grid oxide at intervals.
Preferably, the novel reverse conducting IGBT device with an embedded channel diode further includes two P + + base regions and two N + + emitter regions, the two P + + base regions are symmetrically disposed, the two N + + emitter regions are symmetrically disposed, one of the P + + base regions is connected to a protrusion, one of the N + + emitter regions is connected to one of the P + + base regions and the gate oxide, the other of the P + + base regions is connected to the other protrusion, and the other of the N + + emitter regions is connected to the other of the P + + base regions and the gate oxide.
Preferably, the novel reverse conducting IGBT device with an embedded channel diode further includes two P + base regions, the two P + base regions are symmetrically disposed, the P + base regions are inverted L-shaped, one of the P + base regions is connected to one of the P + + base regions, one of the N + + emitter regions and the gate oxide, and the other of the P + base regions is connected to the other of the P + + base regions, the other of the N + + emitter regions and the gate oxide.
Preferably, the novel reverse conducting IGBT device with the embedded channel diode further includes a carrier storage layer, and the carrier storage layer is located between the two P + base regions and is connected to the two P + base regions and the gate oxide respectively.
Preferably, the distance H1 from the IGBT polysilicon gate to the end of the gate oxide away from the junction is greater than the distance H2 from the trench diode polysilicon gate to the end of the gate oxide away from the junction.
Preferably, the novel reverse conducting IGBT device with the embedded channel diode further includes an N-type drift region, and the N-type drift region is disposed below the P + base region and the carrier storage layer and is connected to the P + base region and the carrier storage layer, respectively.
Preferably, the novel reverse conducting IGBT device with the embedded channel diode further includes an N + -buffer layer, and the N + -buffer layer is disposed below the N-type drift region and connected to the N-type drift region.
Preferably, the novel reverse conducting IGBT device with the embedded channel diode further includes a P + collector region and an N + collector region, the P + collector region and the N + collector region are disposed below the N + -buffer layer and connected to the N + -buffer layer, and the P + collector region is connected to the N + collector region.
Preferably, the distance H1 from the IGBT polysilicon gate to one end of the gate oxide far away from the connecting part is 50-100nm, and the distance H2 from the channel diode polysilicon gate to one end of the gate oxide far away from the connecting part is 10-25 nm.
Preferably, the horizontal distance H3 between the IGBT polysilicon gate and the channel diode polysilicon gate is 1.0-1.5 μm.
Compared with the prior art, the novel reverse conducting IGBT device with the embedded channel diode has the following advantages:
through setting up the trench diode polysilicon gate, showing and having improved reverse recovery characteristic and reduced the grid charge characteristic, promoted the novel switching characteristic who has the reverse conducting type IGBT device of embedded trench diode and made power loss greatly reduced simultaneously.
[ description of the drawings ]
Fig. 1 is a schematic view of a novel reverse conducting IGBT device with embedded channel diodes according to the present invention.
Description of reference numerals:
10. the novel reverse conducting IGBT device with the embedded channel diode; 11. an emitter metal electrode; 12. a gate oxide; 13. IGBT polysilicon gate; 14. a trench diode polysilicon gate; 15. a P + + base region; 16. an N + + emission region; 17. a P + base region; 18. a carrier storage layer; 19. an N-type drift region; 20. an N + -buffer layer; 21. a P + collector region; 22. an N + collector region; 23. a collector metal electrode; 111. a connecting portion; 112. a raised portion.
[ detailed description ] embodiments
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1, the present invention provides a novel reverse conducting IGBT device 10 with embedded trench diodes, which includes an emitter metal electrode 11, a gate oxide 12, an IGBT polysilicon gate 13, a trench diode polysilicon gate 14, two P + + base regions 15, two N + + emitter regions 16, two P + base regions 17, a carrier storage layer 18, an N type drift region 19, an N + -buffer layer 20, a P + collector region 21, an N + collector region 22, and a collector metal electrode 23.
Specifically, the emitter metal electrode 11 includes a connection portion 111 and two protruding portions 112, the connection portion 111 is flat, the two protruding portions 112 are integrally formed at two ends of the connection portion 111, the two protruding portions 112 are located at two ends of the gate oxide 12, the gate oxide 12 is disposed between the connection portion 111 and the two protruding portions 112 and is respectively connected to the connection portion 111 and the two protruding portions 112, and the IGBT polysilicon gate 13 and the trench diode polysilicon gate 14 are respectively disposed on the surface of the gate oxide 12 and are spaced apart from each other.
Preferably, the distance H1 from the IGBT polysilicon gate 13 to the end of the gate oxide 12 away from the junction 111, i.e., the thickness H1 of the ICBT gate oxide, is greater than the distance H2 from the trench diode polysilicon gate 14 to the end of the gate oxide 12 away from the junction 111, i.e., the thickness H2 of the trench diode gate oxide. The size of the distance H2 between the polysilicon gate 14 of the trench diode and the end of the gate oxide 12 far away from the connection portion 111 has a certain influence on the reverse conduction characteristic, when the distance H2 between the polysilicon gate 14 of the trench diode and the end of the gate oxide 12 far away from the connection portion 111 is 10-25nm, the reverse conduction performance is improved to a small extent, and specifically, when the distance H2 between the polysilicon gate 14 of the trench diode and the end of the gate oxide 12 far away from the connection portion 111 is 16nm, the reverse conduction performance is optimal.
Preferably, the distance H1 from the IGBT polysilicon gate 13 to the end of the gate oxide 12 away from the connection 111 is 50-100 nm.
Further, two P + + base regions 15 are symmetrically disposed, two N + + emitter regions 16 are symmetrically disposed, one of the P + + base regions 15 is connected to one of the protruding portions 112, one of the N + + emitter regions 16 is connected to one of the P + + base regions 15 and the gate oxide 12, the other P + + base region 15 is connected to the other protruding portion 112, and the other N + + emitter region 16 is connected to the other P + + base region 15 and the gate oxide 12. Wherein the doping concentration of the P + + base region 15 is 5 × 1018/cm3The doping concentration of the N + + emitter region 16 is 5 × 1020/cm3。
Further, the two P + base regions 17 are symmetrically arranged, the P + base regions 17 are inverted L-shaped, one P + base region 17 is connected to one P + + base region 15, one N + + emitter region 16 and the gate oxide 12, and the other P + base region 17 is connected to the other P + + base region 15, the other N + + emitter region 16 and the gate oxide 12. Wherein the doping concentration of the P + base region 17 is 1 multiplied by 1017/cm3。
Preferably, the horizontal distance H3 between the IGBT polysilicon gate 13 and the channel diode polysilicon gate 14 is 1.0-1.5 μm.
Further, a carrier storage layer 18 is located between the two P + base regions 17 and is respectively connected to the two P + base regions 17 and the gate oxide12 are connected. The carrier storage layer 18 plays a role in carrier expansion when conducting, so that the conducting resistance is not obviously increased, and by combining the arrangement of the trench diode polysilicon gate 14, the capacitance characteristic and the gate charge characteristic of the novel reverse conducting type IGBT device 10 with the embedded trench diode are greatly improved, and compared with a general reverse conducting type IGBT product, the switching topology is faster and more efficient. Wherein the thickness of the carrier storage layer 18 is 5-6 μm, and the doping concentration is 0.9 × 1015/cm3-5×1015/cm3。
Further, an N-type drift region 19 is disposed below the P + base region 17 and the carrier storage layer 18 and connected to the P + base region 17 and the carrier storage layer 18, respectively, wherein the doping concentration of the N-type drift region 19 is 1.4 × 1014/cm3-2.0×1014/cm3The thickness is 70-100 μm.
Further, the N + -buffer layer 20 is disposed below the N-type drift region 19 and connected to the N-type drift region 19, the P + collector region 21 and the N + collector region 22 are disposed below the N + -buffer layer 20 and located above the collector metal electrode 23, the P + collector region 21 is connected to the N + -buffer layer 20 and the collector metal electrode 23, the N + collector region 22 is connected to the N + -buffer layer 20 and the collector metal electrode 23, and the P + collector region 21 is connected to the N + collector region 22. Wherein the doping concentration of the N + -buffer layer 20 is 5 × 1015/cm3The doping concentration of the P + collector region 21 is 5X 1017/cm3。
Compared with the prior art, the novel reverse conducting IGBT device with the embedded channel diode has the following advantages:
through setting up the trench diode polysilicon gate, showing and having improved reverse recovery characteristic and reduced the grid charge characteristic, promoted the novel switching characteristic who has the reverse conducting type IGBT device of embedded trench diode and made power loss greatly reduced simultaneously.
The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and any modifications, equivalents, improvements, etc. made within the spirit of the present invention should be included in the scope of the present invention.
Claims (9)
1. The utility model provides a novel reverse conducting type IGBT device with embedded channel diode which characterized in that: the novel reverse conducting IGBT device with the embedded trench diode comprises an emitting electrode metal electrode, a grid oxide, an IGBT polysilicon gate and a trench diode polysilicon gate, wherein the emitting electrode metal electrode comprises a connecting part and two convex parts, the connecting part is in a flat plate shape, the two convex parts are integrally formed at two ends of the connecting part, the two convex parts are positioned at two ends of the grid oxide, the grid oxide is arranged between the connecting part and the two convex parts and is respectively connected with the connecting part and the two convex parts, and the IGBT polysilicon gate and the trench diode polysilicon gate are arranged on the surface of the grid oxide at intervals;
the distance H1 from the IGBT polysilicon gate to one end of the gate oxide far away from the connecting part is larger than the distance H2 from the channel diode polysilicon gate to one end of the gate oxide far away from the connecting part.
2. The novel reverse conducting IGBT device with embedded channel diode of claim 1 characterized in that: the novel reverse conducting IGBT device with the embedded channel diode further comprises two P + + base regions and two N + + emitter regions, wherein the two P + + base regions are symmetrically arranged, the two N + + emitter regions are symmetrically arranged, one P + + base region is connected with a protruding portion, one N + + emitter region is respectively connected with one P + + base region and gate oxide, the other P + + base region is connected with the other protruding portion, and the other N + + emitter region is respectively connected with the other P + + base region and gate oxide.
3. The novel reverse conducting IGBT device with embedded channel diode of claim 2, characterized in that: the novel reverse conducting IGBT device with the embedded channel diode further comprises two P + base regions, wherein the two P + base regions are symmetrically arranged, the P + base regions are inverted L-shaped, one P + base region is respectively connected with one P + + base region, one N + + emitter region and a grid oxide, and the other P + base region is respectively connected with the other P + + base region, the other N + + emitter region and the grid oxide.
4. The novel reverse conducting IGBT device with embedded channel diode of claim 3 characterized in that: the novel reverse conducting IGBT device with the embedded channel diode further comprises a current carrier storage layer, wherein the current carrier storage layer is located between the two P + base regions and is respectively connected with the two P + base regions and the grid oxide.
5. The novel reverse conducting IGBT device with embedded channel diode of claim 4, characterized in that: the novel reverse conducting IGBT device with the embedded channel diode further comprises an N-type drift region, wherein the N-type drift region is arranged below the P + base region and the current carrier storage layer and is respectively connected with the P + base region and the current carrier storage layer.
6. The novel reverse conducting IGBT device with embedded channel diode of claim 5 characterized in that: the novel reverse conducting IGBT device with the embedded channel diode further comprises an N + -buffer layer, and the N + -buffer layer is arranged below the N-type drift region and connected with the N-type drift region.
7. The novel reverse conducting IGBT device with embedded channel diode of claim 6, characterized in that: the novel reverse conducting IGBT device with the embedded channel diode further comprises a P + collector region and an N + collector region, the P + collector region and the N + collector region are arranged below the N + -buffer layer and connected with the N + -buffer layer, and the P + collector region is connected with the N + collector region.
8. The novel reverse conducting IGBT device with embedded channel diode of claim 1 characterized in that: the distance H1 from the IGBT polysilicon gate to one end, far away from the connecting part, of the gate oxide is 50-100nm, and the distance H2 from the channel diode polysilicon gate to one end, far away from the connecting part, of the gate oxide is 10-25 nm.
9. The novel reverse conducting IGBT device with embedded channel diode of claim 1 characterized by: the horizontal distance H3 between the IGBT polysilicon gate and the channel diode polysilicon gate is 1.0-1.5 μm.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US9214521B2 (en) * | 2012-06-21 | 2015-12-15 | Infineon Technologies Ag | Reverse conducting IGBT |
| CN103855155A (en) * | 2012-12-06 | 2014-06-11 | 江苏物联网研究发展中心 | Three-mode integrated insulated gate bipolar transistor and forming method thereof |
| DE102014110681B4 (en) * | 2014-07-29 | 2019-06-06 | Infineon Technologies Ag | REVERSE LEADING IGBT AND MANUFACTURING METHOD THEREFOR |
| EP3712961A1 (en) * | 2019-03-22 | 2020-09-23 | ABB Schweiz AG | Reverse conducting insulated gate power semiconductor device having low conduction losses |
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