CN113224142B - Gallium oxide heterojunction structures and heterojunction devices based on bound-charge enhanced 2DEG - Google Patents
Gallium oxide heterojunction structures and heterojunction devices based on bound-charge enhanced 2DEG Download PDFInfo
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 43
- 239000004065 semiconductor Substances 0.000 claims abstract description 84
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 21
- 230000005533 two-dimensional electron gas Effects 0.000 claims abstract description 13
- 230000005684 electric field Effects 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- CYTYCFOTNPOANT-UHFFFAOYSA-N Perchloroethylene Chemical group ClC(Cl)=C(Cl)Cl CYTYCFOTNPOANT-UHFFFAOYSA-N 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 6
- CKUAXEQHGKSLHN-UHFFFAOYSA-N [C].[N] Chemical compound [C].[N] CKUAXEQHGKSLHN-UHFFFAOYSA-N 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 229950011008 tetrachloroethylene Drugs 0.000 claims description 6
- 239000010408 film Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 abstract description 48
- 230000010287 polarization Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 82
- 235000012431 wafers Nutrition 0.000 description 39
- 238000006243 chemical reaction Methods 0.000 description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 27
- 238000004140 cleaning Methods 0.000 description 21
- 238000000231 atomic layer deposition Methods 0.000 description 20
- GIRKRMUMWJFNRI-UHFFFAOYSA-N tris(dimethylamino)silicon Chemical compound CN(C)[Si](N(C)C)N(C)C GIRKRMUMWJFNRI-UHFFFAOYSA-N 0.000 description 18
- 239000007789 gas Substances 0.000 description 15
- 239000002243 precursor Substances 0.000 description 15
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 15
- 239000000243 solution Substances 0.000 description 13
- 238000010926 purge Methods 0.000 description 12
- 239000012159 carrier gas Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000005406 washing Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000007664 blowing Methods 0.000 description 3
- 239000003599 detergent Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000003344 environmental pollutant Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000003446 ligand Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 231100000719 pollutant Toxicity 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000002791 soaking Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention relates to a gallium oxide heterojunction structure and a heterojunction device based on bound charge enhanced 2DEG, the heterojunction structure comprising: ga stacked from bottom to top in sequence 2 O 3 The semiconductor device comprises a layer, a first semiconductor layer and a second semiconductor layer, wherein the forbidden band width of the first semiconductor layer is larger than that of Ga 2 O 3 A forbidden bandwidth of the layer; the dielectric constant of the second semiconductor layer is less than the dielectric constant of the first semiconductor layer. The gallium oxide heterojunction structure based on bound charge enhanced 2DEG of the invention combines a semiconductor material with low dielectric constant and AlN/Ga 2 O 3 Heterojunction structural bonding induces AlN/Ga by applying a forward electric field to a semiconductor material of low dielectric constant to generate a combination of bound charges and polarization charges of AlN 2 O 3 The two-dimensional electron gas concentration at the heterojunction interface increases.
Description
Technical Field
The invention belongs to the technical field of microelectronics, and particularly relates to a gallium oxide heterojunction structure and a heterojunction device based on bound charge enhanced 2 DEG.
Background
In recent years, gallium oxide (Ga) 2 O 3 ) The oxide semiconductor material with a wide forbidden band is a new wide forbidden band oxide semiconductor material which arouses great interest of researchers. Gallium oxide has lower growth cost, shorter absorption cut-off edge, high breakdown field strength, larger forbidden band width, high thermal stability and chemical stability, and radiation resistanceThe advantages of the ultraviolet detector are always the research focus in the field of photoelectric detection, and the ultraviolet detector has important application prospects in the aspects of solar blind ultraviolet detectors, ultrahigh-voltage power devices and the like.
During the growth of gallium oxide, defects such as oxygen vacancies, gallium vacancies, interstitial gallium atoms, interstitial oxygen atoms, etc. are easily generated therein, and these unintentionally doped defects are uncontrollable, and thus, the conductivity of gallium oxide is not good. Furthermore, the electron mobility of the gallium oxide material is low, which is also a main factor that restricts the characteristics of the gallium oxide device.
In order to improve the carrier mobility, a method of moving carriers bound at a two-dimensional interface by using a two-dimensional electron gas, that is, by using energy band discontinuity of a material heterojunction, so as to reduce lattice scattering, may be considered to improve the carrier mobility. But due to Ga 2 O 3 The material has no piezoelectric property, and a two-dimensional electron gas interface is difficult to obtain through stress.
Disclosure of Invention
In order to solve the above problems in the prior art, the present invention provides a gallium oxide heterojunction structure and a heterojunction device based on bound charge enhanced 2 DEG. The technical problem to be solved by the invention is realized by the following technical scheme:
the invention provides a gallium oxide heterojunction structure based on bound charge enhanced 2DEG, which comprises: ga stacked from bottom to top in sequence 2 O 3 A layer, a first semiconductor layer, and a second semiconductor layer, wherein,
the forbidden bandwidth of the first semiconductor layer is larger than that of the Ga 2 O 3 A forbidden bandwidth of the layer;
the dielectric constant of the second semiconductor layer is less than the dielectric constant of the first semiconductor layer.
In one embodiment of the present invention, the material of the first semiconductor layer is AlN.
In one embodiment of the present invention, the dielectric constant of the second semiconductor layer is ≦ 3.9C 2 ·N -1 ·M -2 。
In an embodiment of the present invention, the material of the second semiconductor layer is silicon dioxide, fluorosilicone glass, poly-tetrachloroethylene, polyimide, or an amorphous carbon-nitrogen film.
In one embodiment of the present invention, the first semiconductor layer has a thickness of 50-80nm.
In one embodiment of the present invention, the thickness of the second semiconductor layer is 50 to 80nm.
The present invention provides a heterojunction device comprising:
ga stacked from bottom to top in sequence 2 O 3 A layer, a first semiconductor layer and a second semiconductor layer, the Ga 2 O 3 The layer, the first semiconductor layer, and the second semiconductor layer form a gallium oxide heterojunction structure;
the source electrode region and the drain electrode region are positioned in the gallium oxide heterojunction structure and are oppositely arranged on two sides of the gallium oxide heterojunction structure;
a source electrode disposed on the source electrode region;
a drain electrode disposed on the drain region;
a gate electrode disposed on the second semiconductor layer and between the source electrode and the drain electrode;
wherein a forbidden band width of the first semiconductor layer is larger than that of the Ga 2 O 3 A forbidden bandwidth of the layer; the dielectric constant of the second semiconductor layer is less than the dielectric constant of the first semiconductor layer.
In one embodiment of the present invention, a material of the first semiconductor layer is AlN.
In one embodiment of the present invention, the dielectric constant of the second semiconductor layer is ≦ 3.9C 2 ·N -1 ·M -2 。
In an embodiment of the present invention, the material of the second semiconductor layer is silicon dioxide, fluorosilicone glass, poly-tetrachloroethylene, polyimide, or an amorphous carbon-nitrogen film.
Compared with the prior art, the invention has the beneficial effects that:
1. bound charge enhanced 2DEG based gallium oxide of the present inventionA heterojunction structure comprising a semiconductor material with a low dielectric constant and AlN/Ga 2 O 3 The heterojunction structure is combined, and bound charges and polarization charges of AlN are combined by applying a forward electric field on the semiconductor material with low dielectric constant, so that AlN/Ga is induced 2 O 3 The two-dimensional electron gas concentration at the heterojunction interface increases.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understood, the following preferred embodiments are described in detail with reference to the accompanying drawings.
Drawings
FIG. 1 shows AlN/Ga provided in an example of the present invention 2 O 3 Forming a two-dimensional electron gas diagram by the heterojunction energy band;
FIG. 2 is a schematic diagram of a bound charge enhanced 2DEG based gallium oxide heterojunction structure according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a bound charge enhancement based 2DEG provided by an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a heterojunction device according to an embodiment of the present invention.
Detailed Description
To further illustrate the technical means and effects of the present invention for achieving the predetermined objects, a gallium oxide heterojunction structure and a heterojunction device based on bound charge enhanced 2DEG according to the present invention are described in detail below with reference to the accompanying drawings and the detailed description.
The foregoing and other technical matters, features and effects of the present invention will be apparent from the following detailed description of the embodiments, which is to be read in connection with the accompanying drawings. The technical means and effects of the present invention adopted to achieve the predetermined purpose can be more deeply and specifically understood through the description of the specific embodiments, however, the attached drawings are provided for reference and description only and are not used for limiting the technical scheme of the present invention.
Example one
Forbidden bandwidth ratio Ga of AlN 2 O 3 Much larger, alN spontaneous polarization direction points to AlN/Ga 2 O 3 Heterojunction interface, and thus two-dimensional electron gas (2 DEG) is generated at the heterojunction, as shown in FIG. 1, where FIG. 1 is AlN/Ga provided by the embodiment of the present invention 2 O 3 The heterojunction energy band forms a two-dimensional electron gas diagram. However, alN in Ga 2 O 3 When the piezoelectric PPE is subjected to compressive strain instead of a relaxation state, most of the spontaneous polarization Psp is canceled, so that AlN/Ga 2 O 3 The 2DEG density of the heterojunction interface decreases.
Referring to fig. 2, fig. 2 is a schematic diagram of a bound charge enhanced 2 DEG-based gallium oxide heterojunction structure according to an embodiment of the present invention. As shown in the figure, the gallium oxide heterojunction structure based on bound charge enhanced 2DEG of the embodiment comprises Ga stacked from bottom to top in sequence 2 O 3 A layer 201, a first semiconductor layer 202 and a second semiconductor layer 203, wherein the first semiconductor layer 202 has a forbidden band width greater than Ga 2 O 3 The forbidden bandwidth of layer 201; the dielectric constant of the second semiconductor layer 202 is smaller than that of the first semiconductor layer 203.
Specifically, in the present embodiment, the material of the first semiconductor layer 202 is AlN.
Further, the dielectric constant of the second semiconductor layer 203 is less than or equal to 3.9C 2 ·N -1 ·M -2 。
Optionally, the material of the second semiconductor layer 203 is silicon dioxide, fluorosilicate glass, poly-tetrachloroethylene, polyimide, or an amorphous carbon-nitrogen film.
Referring to fig. 3, fig. 3 is a schematic diagram of a bound charge enhancement based 2DEG according to an embodiment of the present invention. As shown in the figure, the principle of enhanced 2DEG of gallium oxide heterojunction based on bound charge enhanced 2DEG of the present embodiment is specifically explained by taking AlN as the first semiconductor layer 202 and silicon dioxide as the second semiconductor layer 203, and when the electric field is from SiO 2 The layer (low dielectric constant) runs vertically through the AlN layer (high dielectric constant), near the SiO 2 The AlN interface of the layer causes a negative interface beamCharge-bound sigma b And in the AlN layer near Ga 2 O 3 The layer interface induces equal and opposite amounts of interface bound charges + sigma b Positive interface bound charge + sigma b Will attract more 2DEG, thereby increasing AlN/Ga 2 O 3 Two-dimensional electron gas concentration at the heterojunction interface.
Further, optionally, ga 2 O 3 The thickness of the layer 201 is 80nm, the thickness of the first semiconductor layer 202 is 50-80nm, and the thickness of the second semiconductor layer 203 is 50-80nm.
In this embodiment, the thickness of the second semiconductor layer 203 should not be too large, otherwise the weak electric field is difficult to generate bound charges, and the effect on the two-dimensional electron gas is not significant.
The gallium oxide heterojunction structure based on bound charge enhanced 2DEG of the invention combines a semiconductor material with low dielectric constant and AlN/Ga 2 O 3 The heterojunction structure is combined, and bound charges and polarization charges of AlN are combined by applying a forward electric field on the semiconductor material with low dielectric constant, so that AlN/Ga is induced 2 O 3 The two-dimensional electron gas concentration at the heterojunction interface increases.
Example two
This embodiment provides a heterojunction device comprising the bound-charge enhanced 2 DEG-based gallium oxide heterojunction structure of the first embodiment. Referring to fig. 4, fig. 4 is a schematic structural diagram of a heterojunction device according to an embodiment of the present invention, and as shown in the drawing, the heterojunction device according to the embodiment includes: ga stacked from bottom to top in sequence 2 O 3 Layer 401, first semiconductor layer 402 and second semiconductor layer 403, source region 404, drain region 405, source 406, drain 407 and gate 408.
Wherein Ga 2 O 3 Layer 401, first semiconductor layer 402, and second semiconductor layer 403 form a gallium oxide heterojunction structure; the source region 404 and the drain region 405 are located in the gallium oxide heterojunction structure and are oppositely arranged on two sides of the gallium oxide heterojunction structure; a source 406 is disposed on the source region 404; a drain 407 is disposed on the drain region 405; a gate electrode 408 is disposed on the second semiconductor layer 403,and is located between the source 406 and the drain 407;
in this embodiment, the first semiconductor layer 402 has a forbidden bandwidth larger than that of Ga 2 O 3 The forbidden bandwidth of layer 401; the dielectric constant of the second semiconductor layer 403 is smaller than that of the first semiconductor layer 402.
Optionally, the material of the first semiconductor layer 402 is AlN.
In this embodiment, the second semiconductor layer 403 has a dielectric constant of 3.9C or less 2 ·N -1 ·M -2 。
Optionally, the material of the second semiconductor layer 403 is silicon dioxide, fluorosilicone glass, poly-tetrachloroethylene, polyimide, or an amorphous carbon-nitrogen film.
The heterojunction device of the embodiment makes full use of the property of gallium oxide, improves the overall voltage resistance of the device, is more excellent in application in the fields of high power, high frequency and microwave, and makes up the blank of the gallium oxide two-dimensional electron gas device without polarization induction at present.
EXAMPLE III
In this embodiment, the preparation method of the gallium oxide heterojunction structure based on the bound charge enhanced 2DEG in the first embodiment is specifically described by taking AlN as the first semiconductor layer 202 and silicon dioxide as the second semiconductor layer 203.
AlN thickness 80nm, siO 2 SiO with a thickness of 80nm 2 /AlN/Ga 2 O 3 A heterojunction structure:
step 1: polishing and cleaning of gallium oxide substrate
(1.1) to Ga 2 O 3 Chemical mechanical polishing of the wafer to obtain a damage free low roughness surface;
(1.2) ultrasonically cleaning the wafer in a detergent for 10min, and then washing the wafer for 10min by using pure water to remove oil stains on the surface;
(1.3) cleaning the wafer according to the standard RCA to remove the residual pollutants in the wafer in the processing process, comprising the following steps:
step a: ultrasonically cleaning the wafer in isopropanol with water bath temperature of 85 ℃ for 10min, and then overflowing with clean water for 20-30min;
step b: the volume ratio of 1: 3H 2 SO 4 ：H 2 O 2 Cleaning the wafer with the solution for 15min, and then overflowing with clear water for 20-30min;
step c: at the water bath temperature of 80 ℃ and the volume ratio of 1:1:5 NH 4 OH：H 2 O 2 ：H 2 Ultrasonically cleaning the wafer in O solution for 10min, and then overflowing clear water for 20-30min;
step d: at the water bath temperature of 80 ℃ and the volume ratio of 1:1: HCl of 6: h 2 O 2 ：H 2 Ultrasonically cleaning the wafer in O solution for 10min, and then overflowing clear water for 20-30min; wafers were treated at a volume ratio of 1: h 2 Soaking in O solution for 2min, and then overflowing with clear water for 20-30min to remove the oxide layer on the surface of the gallium oxide wafer.
(1.3) after completion of the washing, high-purity N was used 2 And drying the wafer, and then quickly putting the wafer into a high vacuum chamber of the atomic layer deposition equipment for preheating.
Step 2: growing AlN layer by PE-ALD
(2.1) heating the substrate in a high vacuum chamber, and alternately introducing TMA and N converted into plasma into the chamber in a pulse mode 2 /H 2 And (4) mixing the gases. Among them, 99.7% of Trimethylaluminum (TMA) was used as an Al source, and 99.9% of N was converted into plasma 2 ：H 2 =4:1 as the N source.
(2.2) use of high purity N in the pulse gap 2 (99.99%) as a carrier gas to carry the unreacted source and ligand away from the reaction chamber, the carrier gas flow was set at 55sccm to maintain a pressure within the chamber of 800Pa and a chamber pressure of 200Pa.
(2.3) setting of 0.25s TMA pulse, 60s purge time, 40s N per ALD (Mono atomic layer deposition) cycle in sequence 2 /H 2 Mixed gas pulse (5 s after pulse start, plasma generator was turned on, N, H radicals were generated), 30s purge time. The power of the plasma generator was 120W, the source temperature was set at 20 deg.C and the growth temperature interval was 250 deg.C.
(2.4) allowing TMA and N, H radicals adsorbed on the substrate to react to form AlN, wherein only a monoatomic layer of AlN thin film is formed in each cycle, and obtaining an AlN layer of 80nm after about 800 cycles.
And step 3: PE-ALD SiO growth 2 Layer(s)
(3.1) Using Tris (dimethylamino) silane TDMAS (C) 6 H 18 N 3 Si) as silicon source, ozone (O) is adopted 3 ) As an oxygen source, setting the reaction temperature to be 325 ℃, the pre-waiting time before the reaction starts to be 30s, the characteristic time corresponding to the reaction period to be Si pulse time 0.05s, si purging time 0.40s, O 3 Pulse time 0.70s, O 3 The purge time was 0.40s and the plasma power was 2.5kW.
Wherein, the silicon source precursor TDMAS is directly fed into the ALD reaction chamber in a pulse form by a carrier gas (Ar gas of 180 sccm), and O 3 Is externally connected with high-purity O 2 (purity 99.999%) and introducing into an ozone generator.
(3.2) introducing Ar gas into the reaction cavity, and blowing away the redundant TDMAS precursor on the surface of the AlN to ensure that only a single layer of TDMAS precursor exists on the surface of the AlN;
(3.3) adding O 3 Introducing the precursor into an ALD reaction chamber to react with the TDMAS precursor adsorbed on the surface;
(3.4) re-introducing Ar gas into the reaction chamber to remove unreacted O 3 And the reaction residue is blown away, and 80nm of SiO is obtained after about 800 cycles 2 And (3) a layer.
AlN thickness 80nm, siO 2 SiO with a thickness of 50nm 2 /AlN/Ga 2 O 3 A heterojunction structure:
step 1: polishing and cleaning of gallium oxide substrate
(1.1) to Ga 2 O 3 Chemical mechanical polishing of the wafer to obtain a damage free low roughness surface;
(1.2) ultrasonically cleaning the wafer in a detergent for 10min, and then washing the wafer for 10min by using pure water to remove oil stains on the surface;
(1.3) cleaning the wafer according to the standard RCA to remove the residual pollutants in the wafer in the processing process, comprising the following steps:
step a: ultrasonically cleaning the wafer in isopropanol with water bath temperature of 85 ℃ for 10min, and then overflowing with clean water for 20-30min;
step b: the volume ratio of 1: 3H 2 SO 4 ：H 2 O 2 Cleaning the wafer with the solution for 15min, and then overflowing with clear water for 20-30min;
step c: at the water bath temperature of 80 ℃ and the volume ratio of 1:1:5 NH 4 OH：H 2 O 2 ：H 2 Ultrasonically cleaning the wafer in the O solution for 10min, and then overflowing clear water for 20-30min;
step d: at the water bath temperature of 80 ℃ and the volume ratio of 1:1: HCl of 6: h 2 O 2 ：H 2 Ultrasonically cleaning the wafer in O solution for 10min, and then overflowing clear water for 20-30min; wafers were treated at a volume ratio of 1: h 2 Soaking in O solution for 2min, and overflowing with clear water for 20-30min to remove the oxide layer on the surface of the gallium oxide wafer.
(1.3) after completion of the washing, high-purity N was used 2 And drying the wafer, and then quickly putting the wafer into a high vacuum chamber of the atomic layer deposition equipment for preheating.
And 2, step: growing AlN layer by PE-ALD
(2.1) heating the substrate in a high vacuum chamber, and alternately introducing TMA and N converted into plasma into the chamber in a pulse mode 2 /H 2 And (4) mixing the gases. Among them, 99.7% of Trimethylaluminum (TMA) was used as an Al source, and 99.9% of N was converted into plasma 2 ：H 2 =4:1 as the N source.
(2.2) use of high purity N in the pulse gap 2 (99.99%) as a carrier gas to carry the unreacted source and ligand away from the reaction chamber, the carrier gas flow was set at 55sccm to maintain a pressure within the chamber of 800Pa and a chamber pressure of 200Pa.
(2.3) setting TMA pulse per ALD (monoatomic layer deposition) cycle in sequence of 0.25s, purge time of 60s, N of 40s 2 /H 2 Mixed gas pulse (5 s after pulse start, plasma generator was turned on, N, H radicals were generated), 30s purge time. The power of the plasma generator was 120W, the source temperature was set at 20 deg.C and the growth temperature interval was 250 deg.C.
(2.4) allowing TMA and N, H radicals adsorbed on the substrate to react to form AlN, wherein only a monoatomic layer of AlN thin film is formed in each cycle, and obtaining an AlN layer of 80nm after about 800 cycles.
And step 3: PE-ALD SiO growth 2 Layer(s)
(3.1) Using Tris (dimethylamino) silane TDMAS (C) 6 H 18 N 3 Si) as silicon source, ozone (O) is adopted 3 ) As an oxygen source, setting the reaction temperature to be 325 ℃, the pre-waiting time before the reaction is started to be 30s, the characteristic time corresponding to the reaction period to be Si pulse time 0.05s, si purging time 0.40s and O 3 Pulse time 0.70s, O 3 The purge time was 0.40s and the plasma power was 2.5kW.
Wherein, the silicon source precursor TDMAS is directly fed into the ALD reaction chamber in a pulse form by a carrier gas (Ar gas of 180 sccm), and O 3 Is externally connected with high-purity O 2 (purity 99.999%) and introducing into an ozone generator.
(3.2) introducing Ar gas into the reaction cavity, and blowing away the redundant TDMAS precursor on the surface of the AlN so that only a single layer of TDMAS precursor exists on the surface of the AlN;
(3.3) adding O 3 Introducing the precursor into an ALD reaction chamber to react with the TDMAS precursor adsorbed on the surface;
(3.4) re-introducing Ar gas into the reaction chamber to remove unreacted O 3 And the reaction residue is blown off, and 50nm of SiO is obtained after about 500 cycles 2 And (3) a layer.
AlN thickness 50nm, siO 2 SiO with a thickness of 80nm 2 /AlN/Ga 2 O 3 A heterojunction structure:
step 1: polishing and cleaning of gallium oxide substrate
(1.1) to Ga 2 O 3 Chemical mechanical polishing of the wafer to obtain a damage free low roughness surface;
(1.2) ultrasonically cleaning the wafer in a detergent for 10min, and then washing the wafer for 10min by using pure water to remove oil stains on the surface;
(1.3) cleaning the wafer according to the standard RCA to remove the residual pollutants in the wafer in the processing process, comprising the following steps:
step a: ultrasonically cleaning the wafer in isopropanol with water bath temperature of 85 ℃ for 10min, and then overflowing with clean water for 20-30min;
step b:the volume ratio of 1: 3H 2 SO 4 ：H 2 O 2 Cleaning the wafer with the solution for 15min, and then overflowing with clear water for 20-30min;
step c: at the water bath temperature of 80 ℃ and the volume ratio of 1:1:5 NH 4 OH：H 2 O 2 ：H 2 Ultrasonically cleaning the wafer in O solution for 10min, and then overflowing clear water for 20-30min;
step d: at the water bath temperature of 80 ℃ and the volume ratio of 1:1:6 HCl: h 2 O 2 ：H 2 Ultrasonically cleaning the wafer in O solution for 10min, and then overflowing clear water for 20-30min; wafers were treated at a volume ratio of 1: h 2 Soaking in O solution for 2min, and overflowing with clear water for 20-30min to remove the oxide layer on the surface of the gallium oxide wafer.
(1.3) after completion of the washing, high purity N was used 2 And drying the wafer, and then quickly putting the wafer into a high vacuum chamber of the atomic layer deposition equipment for preheating.
Step 2: growing AlN layer by PE-ALD
(2.1) heating the substrate in a high vacuum chamber, and alternately introducing TMA and N converted into plasma into the chamber in a pulse mode 2 /H 2 And (4) mixing the gases. Among them, 99.7% of Trimethylaluminum (TMA) was used as an Al source, and 99.9% of N was converted into plasma 2 ：H 2 =4:1 as the N source.
(2.2) use of high purity N in the pulse gap 2 (99.99%) as a carrier gas, the unreacted source and ligand were carried out of the reaction chamber with a carrier gas flow rate of 55sccm to maintain a pressure within the chamber of 800Pa and a reaction chamber pressure of 200Pa.
(2.3) setting of 0.25s TMA pulse, 60s purge time, 40s N per ALD (Mono atomic layer deposition) cycle in sequence 2 /H 2 Mixed gas pulse (5 s after pulse start, plasma generator was turned on, N, H radicals were generated), 30s purge time. The power of the plasma generator was 120W, the source temperature was set at 20 deg.C and the growth temperature interval was 250 deg.C.
(2.4) the TMA and N, H react by adsorbing radicals onto the substrate to form AlN, only a monoatomic layer of AlN thin film is formed in each cycle, and after about 500 cycles, a 50nm AlN layer is obtained.
And step 3: PE-ALD SiO growth 2 Layer(s)
(3.1) Using Tris (dimethylamino) silane TDMAS (C) 6 H 18 N 3 Si) as a silicon source, ozone (O) is used 3 ) As an oxygen source, setting the reaction temperature to be 325 ℃, the pre-waiting time before the reaction starts to be 30s, the characteristic time corresponding to the reaction period to be Si pulse time 0.05s, si purging time 0.40s, O 3 Pulse time 0.70s, O 3 The purge time was 0.40s and the plasma power was 2.5kW.
Wherein, the silicon source precursor TDMAS is directly fed into the ALD reaction chamber in a pulse form by a carrier gas (Ar gas of 180 sccm), and O 3 Is externally connected with high-purity O 2 (purity 99.999%) and introducing into an ozone generator.
(3.2) introducing Ar gas into the reaction cavity, and blowing away the redundant TDMAS precursor on the surface of the AlN to ensure that only a single layer of TDMAS precursor exists on the surface of the AlN;
(3.3) adding O 3 Introducing the precursor into an ALD reaction chamber to react with the TDMAS precursor adsorbed on the surface;
(3.4) introducing Ar gas into the reaction cavity again to remove unreacted O 3 And the reaction residue is blown away, and 80nm of SiO is obtained after about 800 cycles 2 And (3) a layer.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or device that comprises a list of elements does not include only those elements but may include other elements not expressly listed. Without further limitation, an element defined by the phrase "comprising a … …" does not exclude the presence of additional like elements in an article or apparatus that comprises the element. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The directional or positional relationships indicated by "upper", "lower", "left", "right", etc., are based on the directional or positional relationships shown in the drawings, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (6)
1.A bound charge enhanced 2DEG based gallium oxide heterojunction structure comprising: ga stacked from bottom to top in sequence 2 O 3 A layer, a first semiconductor layer, and a second semiconductor layer, wherein,
the forbidden band width of the first semiconductor layer is larger than that of the Ga 2 O 3 A forbidden bandwidth of the layer; the first semiconductor layer is made of AlN;
the dielectric constant of the second semiconductor layer is smaller than that of the first semiconductor layer; the dielectric constant of the second semiconductor layer is less than or equal to 3.9C 2 ·N -1 ·M -2 (ii) a Applying a forward electric field to the second semiconductor layer to increase AlN/Ga 2 O 3 Two-dimensional electron gas concentration at the heterojunction interface.
2. The bound charge enhanced 2DEG based gallium oxide heterojunction structure according to claim 1, wherein the material of the second semiconductor layer is silicon dioxide, fluorosilicone glass, poly-tetrachloroethylene, polyimide or amorphous carbon-nitrogen thin film.
3. The bound charge enhanced 2 DEG-based gallium oxide heterojunction structure according to claim 1, wherein the thickness of the first semiconductor layer is 50-80nm.
4. The bound charge enhanced 2DEG based gallium oxide heterojunction structure according to claim 1, wherein the thickness of the second semiconductor layer is 50-80nm.
5. A heterojunction device, comprising:
ga stacked from bottom to top in sequence 2 O 3 A layer, a first semiconductor layer and a second semiconductor layer, the Ga 2 O 3 The layer, the first semiconductor layer, and the second semiconductor layer form a gallium oxide heterojunction structure;
the source electrode region and the drain electrode region are positioned in the gallium oxide heterojunction structure and are oppositely arranged on two sides of the gallium oxide heterojunction structure;
a source electrode disposed on the source electrode region;
a drain electrode disposed on the drain region;
a gate electrode disposed on the second semiconductor layer and between the source electrode and the drain electrode;
wherein a forbidden band width of the first semiconductor layer is larger than that of the Ga 2 O 3 A forbidden bandwidth of the layer; the dielectric constant of the second semiconductor layer is smaller than that of the first semiconductor layer; the first semiconductor layer is made of AlN; the dielectric constant of the second semiconductor layer is less than or equal to 3.9C 2 ·N -1 ·M -2 (ii) a Applying a forward electric field to the second semiconductor layer to increase AlN/Ga 2 O 3 Two-dimensional electron gas concentration at the heterojunction interface.
6. The heterojunction device of claim 5, wherein the material of the second semiconductor layer is silicon dioxide, fluorinated silicon glass, poly-tetrachloroethylene, polyimide, or amorphous carbon-nitrogen film.
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