CN113218961B - Substrate defect detection device and method - Google Patents
Substrate defect detection device and method Download PDFInfo
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- CN113218961B CN113218961B CN202110430767.8A CN202110430767A CN113218961B CN 113218961 B CN113218961 B CN 113218961B CN 202110430767 A CN202110430767 A CN 202110430767A CN 113218961 B CN113218961 B CN 113218961B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8812—Diffuse illumination, e.g. "sky"
- G01N2021/8816—Diffuse illumination, e.g. "sky" by using multiple sources, e.g. LEDs
Abstract
The invention relates to a substrate defect detection device and a method, wherein the substrate defect detection device comprises a support frame, an illumination and shooting module, a wafer bearing module and a control system; the supporting frame comprises a hemispherical shell, a base and a connecting section, wherein the hemispherical shell is arranged on the base through the connecting section; a film feeding window is arranged on the connecting section, a plurality of mounting holes are uniformly formed in the hemispherical shell, and the axis of each mounting hole penetrates through the spherical center of the hemispherical shell; the wafer bearing module is arranged on the base and used for stably bearing the substrate to be detected; the illumination and shooting module can realize illumination and shooting of the substrate to be detected on the wafer bearing module; the control system is used for signal acquisition, data processing and linkage control of the illumination and shooting module and the film bearing module. The invention adopts an omnibearing multi-field illumination and shooting mode to detect the defects of the substrate based on the fundamental principle of scattering imaging, realizes omnibearing multi-field illumination and shooting, and makes up the defect of the scattering imaging method in the aspect of accurate detection of the defects of the substrate.
Description
Technical Field
The invention relates to the technical field of chip defect detection, in particular to a device and a method for detecting a substrate defect.
Background
Through decades of development, substrate defect detection technology based on a scattering imaging method has developed a plurality of technical routes:
(1) Oblique incidence (Oblique Incidence) scatter imaging, which is to make the illumination beam obliquely incident on the surface of the substrate from the periphery of the imaging objective lens, collect the scattered light by the detector through the imaging objective lens, and detect the defect. U.S. department epitaxy (KLA) (U.S. patent No. 8605275), japanese Hitachi (Hitachi) (U.S. patent No. 9933370), chinese department Feishment test (Chinese patent No. 201810954898.4), and the like have all studied a series of defect detection systems and methods based on this principle.
(2) Dark Field microscopic imaging, wherein illumination beams of the Dark Field microscopic imaging enter from an outer ring through hole inside an imaging objective lens, then uniformly irradiate on the surface of a substrate through reflection, and scattered light returns from the middle of the objective lens to a detector. Research on defect detection systems and methods based on dark-field microscopic imaging principles has been conducted by U.S. department epitaxy (KLA) (U.S. patent No. 19726615) and Shanghai university (Chinese patent No. 201611167202).
(3) The combination mode imaging mainly combines different illumination modes and different signal acquisition modes, improves the integrity of defect information through uniform illumination on one hand, searches defects through scattering imaging on the other hand, and identifies the defects through bright field imaging. In order to give consideration to the detection efficiency and the integrity of defect information as much as possible, researchers have proposed a scatter imaging method with multiple combination modes: 1) Normal and oblique incidence illumination, scatter imaging (U.S. patent: 6590645 A) is provided; 2) Normal incidence and oblique incidence illumination, coaxial bright field imaging and scatter imaging (U.S. patent: 9053390). 3) Oblique incidence illumination, reflective bright field imaging and scatter imaging (U.S. patent: 20160150191). 4) Normal incidence and oblique incidence illumination, coaxial bright field imaging, reflected bright field imaging, and scatter imaging (U.S. patent: 10551320).
The scattering imaging method is most sensitive to defect information, but in order to achieve both detection efficiency and defect information integrity, only a combination imaging mode can be selected for detecting the substrate defects, and even the advantages of scattering imaging are sacrificed. The scattered energy intensity is directly related to the scattering angle, and the traditional single-field illumination and shooting mode is adopted, so that only partial information of the energy field defect can be collected, the defect information can not be completely obtained, and further the size and the type of the defect can not be accurately identified.
Disclosure of Invention
The technical problems to be solved by the invention are as follows: the invention provides a substrate defect detection device and a method, which are based on a scattering imaging basic principle, adopt an omnibearing multi-field illumination and shooting mode to detect the substrate defect, realize omnibearing multi-field illumination and shooting, and make up for the defect of the scattering imaging method in the aspect of accurate detection of the substrate defect.
The technical scheme of the invention is as follows: a substrate defect detection device comprises a support frame, an illumination and shooting module, a wafer bearing module and a control system;
the supporting frame comprises a hemispherical shell, a base and a connecting section, wherein the hemispherical shell is arranged on the base through the connecting section; a film feeding window is arranged on the connecting section, a plurality of mounting holes are uniformly formed in the hemispherical shell, and the axis of each mounting hole penetrates through the center of the hemispherical shell;
the chip bearing module is arranged on the base and used for stably bearing the substrate to be detected;
the illumination and shooting module comprises at least one central illumination and shooting module positioned in the central area of the hemispherical shell and at least one peripheral illumination and shooting module positioned at the periphery of the central area of the hemispherical shell, a plurality of illumination and shooting modules are respectively and correspondingly arranged on the mounting holes of the hemispherical shell, and the illumination and shooting module can realize illumination and shooting of a substrate to be detected on the wafer bearing module;
the control system is used for signal acquisition, data processing and linkage control of the illumination and shooting module and the carrying module.
Further, the illumination and shooting module comprises a detector, an illumination light source, a beam-splitting lens cone, a locking ring, a lens cone lens and an imaging objective lens, wherein the illumination and shooting module is installed on the installation hole through the locking ring, the detector, the illumination light source and the lens cone lens are installed on the beam-splitting lens cone, and the imaging objective lens is connected with the lens cone lens.
Further, the imaging objective is an infinity objective; the tube lens is matched with the detector, the illumination light source and the imaging objective.
Further, the wafer bearing module comprises a displacement table and a sucker, wherein the displacement table is arranged on the base, and the sucker is arranged on the displacement table and used for adsorbing the substrate to be detected.
Further, the displacement table is a six-axis displacement table; the control system is used for signal acquisition, data processing and linkage control of the detector, the illumination light source and the shaft displacement table.
Further, the control system of the substrate defect detection device is utilized to cooperatively control the illumination and shooting module and the substrate bearing module, so that the analysis processing, the omnibearing signal acquisition processing, the defect identification processing or the splicing detection processing of the scattering characteristics of the substrate to be detected on the substrate bearing module are realized.
Further, in the process of analyzing and processing the scattering characteristics, the at least one peripheral illumination and shooting module is controlled to sequentially start the illumination function, the at least one central illumination and shooting module is controlled to start the shooting function and collect images, and the information of scattering energy intensity of defects on the substrate to be detected under different illumination conditions is analyzed.
Further, in the process of the omnidirectional signal acquisition and processing, the at least one central illumination and shooting module is controlled to start an illumination function, the at least one peripheral illumination and shooting module is controlled to start a shooting function at the same time, and the method is used for analyzing the scattered energy intensity information of each angle of the defect on the substrate to be detected.
Further, in the defect identification processing process, the illumination functions and the shooting functions of the illumination and shooting modules are switched based on detection requirements, collected images are analyzed, and particles, pits, scratches and/or water stain defects on the upper surface of the substrate to be detected are identified.
Further, in the process of splicing detection, the control system is utilized to cooperatively control the carrying module and the plurality of lighting and shooting modules, so that defect splicing detection of the whole substrate to be detected is realized.
The beneficial effects of the invention are as follows:
1. the device is based on spherical arrangement of multiple paths of illumination and shooting modules, realizes omnibearing multi-field illumination and shooting, and makes up the defect of a scattering imaging method in the aspect of accurate detection of substrate defects.
2. The device semi-spherical shell can be provided with the illumination and shooting modules with the same or different performance indexes at different positions, and the illumination or shooting function of any illumination and shooting module can be started or closed during working, so that illumination and shooting in any combination form are realized.
3. Based on the device, the scattering energy intensity information of the defects under different illumination conditions can be analyzed, and then the scattering characteristics of the defects can be obtained. The device can analyze the scattering energy intensity information of each dimension of the defect, and cooperatively analyze the defect characteristics based on the multi-dimension scattering energy intensity information. The device can comprehensively analyze the collected images of each path, and then efficiently and accurately identify the defects of particles, pits, scratches, water stains and the like on the surface of the substrate.
4. Based on the device, the chip bearing module and the lighting and shooting module can be cooperatively controlled by the control system, so that the defect of the whole substrate is efficiently spliced and detected.
Drawings
FIG. 1 is a schematic diagram of an overall structure of a substrate defect detecting apparatus according to the present invention;
FIG. 2 is a schematic view of a support frame structure of a substrate defect inspection apparatus according to the present invention;
FIG. 3 is a schematic diagram of an illumination and photographing module of a substrate defect detecting device according to the present invention;
fig. 4 is a schematic view of a carrier module structure of a substrate defect detecting device according to the present invention.
Reference numerals:
1-supporting frame, 1-1-semispherical shell, 1-2-base, 2-lighting and shooting module, 2-1-detector, 2-2-lighting source, 2-3-beam-splitting lens barrel, 2-4-locking ring, 2-5-lens barrel lens, 2-6-imaging objective lens, 2-7-defect feature, 3-carrying module, 3-1-six-axis displacement table, 3-2-sucker, 3-3-substrate to be detected and 4-control system.
Detailed Description
In order to make the objects, technical solutions, advantages of the apparatus and the like of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings.
Whether the Rayleigh scattering theory or the Mie scattering theory is adopted, the scattering energy intensity and the scattering angle are directly related, the traditional single-field illumination and shooting are adopted, only the local information of the energy field defect can be collected, the defect information can not be completely obtained, and the size and the type of the defect can not be accurately identified. When the single-field illumination is carried out, the scattering angles of the defects at different spherical positions are different, and the scattering energy intensities obtained at different spherical positions are also different, so that the single-field illumination and shooting can not obtain the complete information of the defects. The omnibearing multi-field lighting and shooting mode can effectively solve the related problems. The device is based on spherical arrangement of multiple paths of illumination and shooting modules, realizes omnibearing multi-field illumination and shooting, and makes up the defect of a scattering imaging method in the aspect of accurate detection of substrate defects.
Referring to fig. 1-4, the apparatus comprises a support frame 1 for integrating a lighting and filming module and a wafer carrier module; an illumination and photographing module 2 for realizing omnidirectional multi-field illumination and photographing; a carrier module 3 for mounting and adjusting the position of the substrate; and a control system 4 for signal acquisition, data processing and coordinated control of the detector, illumination source and displacement table. Wherein the lighting and shooting module 2 is arranged on the mounting hole of the hemispherical shell 1-1 of the supporting frame 1 through the locking ring 2-4, and the bearing piece module 3 is arranged on the base 1-2 of the supporting frame 1 through the six-axis displacement table 3-1.
Referring to fig. 1-2, a support frame 1 of the apparatus includes a hemispherical shell 1-1 and a base 1-2, and the hemispherical shell 1-1 is mounted on the base 1-2 through a connection section. The connecting section is integrated or detachable and arranged at the edge of the hemispherical shell 1-1, the connecting section is provided with a sheet feeding window, the sheet feeding window can be a rectangular window, a sliding door is arranged outside the window, and light leakage can be effectively prevented after the door is closed. The inner wall of the hemispherical shell 1-1 is subjected to black dyeing treatment, so that a light source can be effectively absorbed, and stray light is avoided. A plurality of mounting holes for mounting the illumination and shooting module 2 are uniformly formed in the hemispherical shell 1-1; the axis of each mounting hole passes through the sphere center. In this embodiment, the same number of mounting holes are arranged on different latitudes, and the angles between adjacent mounting holes on the same latitudes are equal, for example, the angle between adjacent illumination and shooting modules on the same latitudes is 60 °. Although the more the number of the mounting holes are arranged on the same latitude surface, the more comprehensive the defect information is obtained by omnibearing multi-field illumination and shooting, the person skilled in the art needs to perform light field analysis according to detection requirements to determine the number of the mounting holes and the size of the included angle between the adjacent mounting holes on the same latitude surface, and meanwhile, the adjacent illumination and shooting module 2 should be prevented from interfering with each other in space.
Referring to fig. 1 and 3, an illumination and photographing module 2 of the device comprises a detector 2-1, an illumination light source 2-2, a beam-splitting lens barrel 2-3, a locking ring 2-4, a lens barrel lens 2-5 and an imaging objective lens 2-6, wherein the detector 2-1, the illumination light source 2-2 and the lens barrel lens 2-5 are arranged on the beam-splitting lens barrel 2-3, and the imaging objective lens 2-6 is connected with the lens barrel lens 2-5. The lighting and photographing module 2 is mounted on the hemispherical shell 1-1 and the mounting hole of the support frame 1 through the locking ring 2-4. The components of the whole lighting and shooting module 2 are selected and matched according to lighting wavelength, detection view field, resolution and installation layout; the detector 2-1 should meet the requirements of imaging field of view, resolution, sensitivity, signal to noise ratio, etc.; the illumination light source 2-2 should meet the requirements of illumination area, collimation, uniformity, light intensity and the like; the imaging objective lenses 2-6 are required to be infinity objective lenses, and objective lenses or standard objective lenses can be customized; the tube lens 2-5 is matched with the detector 2-1, the illumination light source 2-2 and the imaging objective lens 2-6. The illumination and shooting module 2 comprises at least one central illumination and shooting module 2 positioned in the central area of the hemispherical shell 1-1 and at least one peripheral illumination and shooting module 2 positioned at the periphery of the central area of the hemispherical shell 1-1, and the illumination and shooting module 2 can realize illumination and shooting of a substrate 3-3 to be detected on the wafer bearing module 3;
referring to fig. 4, the wafer carrying module 3 of the apparatus includes a six-axis displacement table 3-1, a suction cup 3-2, and a substrate 3-3 to be inspected, wherein the suction cup 3-2 is mounted on the six-axis displacement table 3-1, and the substrate 3-3 to be inspected is adsorbed on the suction cup 3-2. The six-axis displacement table 3-1 can meet the stroke and precision requirements of functions such as step detection, gesture adjustment, detection focusing, substrate thickness compatibility and the like, and the sucker 3-2 can be compatible with the substrates 3-3 to be detected with different specifications and sizes for adsorption installation.
The device realizes omnibearing multi-field illumination and shooting based on the spherical arrangement of the multi-path illumination and shooting module 2, and overcomes the defect of a scattering imaging method in the aspect of accurate detection of substrate defects. Based on the detection method of the substrate defect detection device, the control system 4 receives a user instruction and sends a control signal to the illumination and shooting modules 2 positioned on different latitude layers, so that when the central illumination and shooting module 2 illuminates, the peripheral illumination and shooting module 2 performs signal acquisition; or when the middle periphery illumination and shooting module 2 illuminates, the center illumination and shooting module 2 performs signal acquisition, so that different forms of illumination and shooting modes are realized. Of course, the person skilled in the art can set and select the lighting and shooting modules 2 with different performance indexes to be set at different positions according to the use requirements.
The following are several typical modes and functions of operation:
(a) Analysis of scattering properties: the control system 4 receives the user instruction, controls the central lighting and shooting module 2 to start the shooting function only right above the substrate, and sequentially starts the lighting functions of the rest position lighting and shooting modules 2. The illumination and photographing module 2 directly above collects scattering intensity information obtained from different illumination angles. The control system 4 obtains the defect characteristics under the surrounding illumination condition after processing the signal data transmitted back by the illumination and shooting module 2 right above;
(b) All-round signal acquisition: the control system 4 receives the user instruction and controls the central lighting and shooting module 2 to start the lighting function right above the substrate, and the lighting and shooting modules 2 at the rest positions simultaneously start the shooting function. The illumination and photographing module 2 of different azimuth angles collects scattering intensity information obtained from the illumination directly above scattered by the defect. The control system 4 processes the signal data transmitted by the illumination and shooting modules 2 with different azimuth angles to obtain the characteristics of defects under the conditions of illumination right above and scattering with different azimuth angles, so that the defect characteristics can be cooperatively analyzed based on multidimensional scattering energy intensity information;
(c) Defect identification: the control system 4 receives a user instruction, a person skilled in the art can switch the lighting and shooting functions of all the lighting and shooting modules 2 according to a detection strategy as required, the lighting and shooting modules 2 with the shooting function are started, energy scattered by defects and obtained from the lighting and shooting modules 2 with the lighting function is collected, the collected signals are transmitted back to the control system 4, and defects such as substrate surface particles, pits, scratches, water stains and the like with different scattering intensity information are efficiently and accurately identified through comprehensive analysis of the control system 4.
(d) And (3) splicing and detecting: the control system 4 cooperatively controls the carrying module 3 and the lighting and shooting module 2 to realize defect splicing detection of the whole substrate. When detecting a substrate with a large area, the control system 4 realizes the movement of a substrate detection area by controlling the six-axis displacement table 3-1, when the six-axis displacement table 3-1 moves the substrate detection area to the center of the hemispherical shell 1-1, any mode in the modes (a) - (c) is selected to detect according to the need, and the control system 4 stores the acquired signals and the processing result to finish the detection of the detection area; then, the previous detection step is circularly carried out until the detection of the substrate is completed; after the detection is finished, the control system 4 splices the stored detection images, and the detection results are integrated to obtain the detection result of the substrate with the large whole area.
By adopting the device provided by the invention, the multi-mode detection is carried out, and compared with the traditional technology, the device can more conveniently analyze the scattering energy intensity information of the defects under different illumination conditions, so that the scattering characteristics of the defects can be analyzed. The defect scattering energy intensity can be effectively improved, so that defects can be accurately detected. The method can analyze the scattered energy intensity information of each dimension of the defect, thereby acquiring more accurate defect contour information and distinguishing different defect types more effectively.
The above is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto. Any alterations and substitutions that would occur to one skilled in the art within the scope of the present disclosure are intended to be included within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.
Claims (10)
1. A substrate defect detection apparatus, characterized in that: comprises a supporting frame (1), an illumination and shooting module (2), a wafer bearing module (3) and a control system (4);
the supporting frame (1) comprises a hemispherical shell (1-1), a base (1-2) and a connecting section, wherein the hemispherical shell (1-1) is arranged on the base (1-2) through the connecting section; the connecting section is provided with a sheet feeding window, the hemispherical shell (1-1) is uniformly provided with a plurality of mounting holes, and the axis of each mounting hole is arranged to penetrate through the spherical center of the hemispherical shell (1-1);
the chip bearing module (3) is arranged on the base (1-2) and is used for stably bearing the substrate (3-3) to be detected;
the illumination and shooting module (2) comprises at least one central illumination and shooting module (2) positioned in the central area of the hemispherical shell (1-1) and at least one peripheral illumination and shooting module (2) positioned at the periphery of the central area of the hemispherical shell (1-1), a plurality of illumination and shooting modules (2) are respectively correspondingly arranged on the mounting holes of the hemispherical shell (1-1), and the illumination and shooting module (2) can realize illumination and shooting of a substrate (3-3) to be detected on the chip bearing module (3);
the control system (4) receives a user instruction, switches the illumination and shooting functions of all the illumination and shooting modules (2) according to a detection strategy as required, and the control system (4) can control the illumination and shooting modules (2) on different latitude layers to switch the illumination function and the shooting function, so that when the central illumination and shooting module (2) illuminates, the peripheral illumination and shooting module (2) performs signal acquisition; or when the peripheral illumination and shooting module (2) illuminates, the central illumination and shooting module (2) performs signal acquisition, so that different illumination and shooting modes are realized.
2. The substrate defect detection apparatus according to claim 1, wherein: the illumination and shooting module (2) comprises a detector (2-1), an illumination light source (2-2), a light splitting lens cone (2-3), a locking ring (2-4), a lens cone lens (2-5) and an imaging objective lens (2-6), wherein the illumination and shooting module (2) is installed on the installation hole through the locking ring (2-4), the detector (2-1), the illumination light source (2-2) and the lens cone lens (2-5) are installed on the light splitting lens cone (2-3), and the imaging objective lens (2-6) is connected with the lens cone lens (2-5).
3. The substrate defect detection apparatus according to claim 2, wherein: the imaging objective lenses (2-6) are infinity objective lenses; the tube lens (2-5) is matched with the detector (2-1), the illumination light source (2-2) and the imaging objective lens (2-6).
4. The substrate defect detection apparatus of claim 3, wherein: the wafer bearing module (3) comprises a displacement table (3-1) and a sucker (3-2), wherein the displacement table is arranged on the base (1-2), and the sucker (3-2) is arranged on the displacement table (3-1) and is used for adsorbing a substrate (3-3) to be detected.
5. The substrate defect detection apparatus of claim 4, wherein: the displacement table (3-1) is a six-axis displacement table; the control system (4) is used for signal acquisition, data processing and linkage control of the detector (2-1), the illumination light source (2-2) and the six-axis displacement table (3-1).
6. The detection method based on the substrate defect detection apparatus according to any one of claims 1 to 5, characterized in that: the control system (4) of the substrate defect detection device is utilized to cooperatively control the illumination and shooting module (2) and the substrate bearing module (3) to realize the analysis processing, the omnibearing signal acquisition processing, the defect identification processing or the splicing detection processing of the scattering characteristics of the substrate (3-3) to be detected on the substrate bearing module (3).
7. The method for detecting a substrate defect of claim 6, wherein: in the process of analyzing and processing the scattering characteristics, the at least one peripheral illumination and shooting module (2) is controlled to sequentially start the illumination function, the at least one central illumination and shooting module (2) is controlled to start the shooting function, images are collected, and the images are used for analyzing scattering energy intensity information of defects on a substrate (3-3) to be detected under different illumination conditions.
8. The method for detecting a substrate defect of claim 6, wherein: in the process of all-dimensional signal acquisition and processing, the at least one central illumination and shooting module (2) is controlled to start an illumination function, and the at least one peripheral illumination and shooting module (2) is controlled to start a shooting function at the same time, so that scattered energy intensity information of defects on a substrate (3-3) to be detected is analyzed.
9. The method for detecting a substrate defect of claim 6, wherein: in the defect identification processing process, the illumination functions and the shooting functions of the illumination and shooting modules (2) are switched based on detection requirements, collected images are analyzed, and particles, pits, scratches and/or water stain defects on the upper surface of the substrate (3-3) to be detected are identified.
10. The method for detecting a substrate defect of claim 6, wherein: in the process of splice detection, the control system (4) is utilized to cooperatively control the carrying module (3) and the plurality of lighting and shooting modules (2) so as to realize defect splice detection of the whole substrate (3-3) to be detected.
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