CN113206447A - Heterojunction laser and preparation method thereof - Google Patents
Heterojunction laser and preparation method thereof Download PDFInfo
- Publication number
- CN113206447A CN113206447A CN202110465099.2A CN202110465099A CN113206447A CN 113206447 A CN113206447 A CN 113206447A CN 202110465099 A CN202110465099 A CN 202110465099A CN 113206447 A CN113206447 A CN 113206447A
- Authority
- CN
- China
- Prior art keywords
- layer
- ges
- stack
- type
- heterojunction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3222—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIVBVI compounds, e.g. PbSSe-laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
The invention discloses a heterojunction semiconductor laser and a preparation method thereof.A double-layer AD type GeS stack and a double-layer rotating AB type GeS stack are transversely connected to form an I type semiconductor heterojunction, and the heterojunction semiconductor laser is used for realizing population inversion in a laser diode and effectively reducing working current. The semiconductor laser diode sequentially comprises from bottom to top: the device comprises a lower electrode (1), a substrate (2), a lower coating layer (3), an active layer (4), an upper coating layer (5), a contact layer (6) and an upper electrode (7). The heterojunction made of the selected material is easier to achieve lattice matching, the preparation process is simpler, and the double-layer rotating AD type GeS stack and the double-layer rotating AB type GeS stack can be transversely connected to form the heterojunction only through Van der Waals force. The few-layer black phosphorus alkene-like structure with different stacking structures is obtained by a mechanical stripping method.
Description
Technical Field
The invention relates to a method for realizing a semiconductor laser by using different stacking structures of few-layer SnS, belonging to the technical field of semiconductor devices.
Background
A semiconductor laser is a generic name of an optical oscillator and an optical amplifier that generate light by stimulated emission of photons due to electron optical transition in a semiconductor material. Low temperature pulsed lasing was observed in the earliest semiconductor lasers in 1962, and semiconductor lasers developed rapidly in the future. After many years of efforts, people have become possible to realize accurate control growth of semiconductor thin film materials due to the achievement of MBE and MOCVD technologies, which makes the development of semiconductor lasers significantly advanced, especially laser diodes, widely used in optical fiber communication, optical disks, laser printers, laser scanners, laser pointers and the like, which are the lasers with the largest production capacity at present.
The commonly used working substances in the semiconductor laser include gallium arsenide (GaAs), cadmium sulfide (CdS), indium phosphide (InP), zinc sulfide (ZnS), etc., and the semiconductor laser generally has the characteristics of small volume, light weight, good reliability, long service life, etc. However, the laser performance of the semiconductor laser in the early days is greatly affected by temperature, and the divergence angle of the light beam is also large, so that the semiconductor laser is inferior in the aspects of directivity, monochromaticity, coherence and the like. Efforts are also being made to find more suitable, contaminant-free, new semiconductor materials for lasers.
In recent years, 2D materials have gained much attention due to their superior properties. For example, the black phosphorus alkene is a direct band gap semiconductor, the band gap of the black phosphorus alkene changes along with the change of the number of layers, and the electron mobility of the few-layer black phosphorus alkene can reach 1000cm2Vs, which has more advantageous optical properties than other materials. Recently, 2D-type black phosphorus alkene materials have attracted much attention, and such materials have superior properties to black phosphorus alkene in some respects.
The method focuses on a black phosphorus alkene-like material, and theoretically calculates that for a few layers of GeS, under different stacking structures, two stable structures are provided, namely a double-layer AD type GeS stacking structure and a double-layer rotating AB type GeS stacking structure. Different types of GeS stacks can be combined into the I-type semiconductor heterojunction by utilizing the characteristics that different stack structures of GeS have different band gaps and energy levels. Semiconductor lasers are fabricated herein by combining a bilayer AD type GeS stack and a bilayer rotating AB type GeS stack by van der Waals forces to form a type I semiconductor heterojunction. The heterojunction referred to here is composed of the same material. Compared with the heterojunction made of different materials, the method has the advantages of relatively low requirement on preparation conditions, low cost, conversion efficiency of 22.44% and capability of realizing efficient photoelectric energy conversion.
Disclosure of Invention
The technical problem is as follows: the invention aims to provide a heterojunction semiconductor laser and a preparation method thereof.
The technical scheme is as follows: the utility model provides a heterojunction laser, realizes HD type heterojunction semiconductor laser with the different stack structures of double-deck stack class black phosphorus alkene, and this heterojunction semiconductor laser's structure includes from bottom to top: the device comprises a lower electrode, a substrate, a lower coating layer, an active layer, an upper coating layer and an upper electrode; the active layer is a transverse heterojunction, and the transverse heterojunction is formed by a double-layer AD type GeS stack and a double-layer rotating AB type GeS stack.
In the heterojunction semiconductor laser, the upper coating layer is a p-type double-layer AD-type GeS stack, the lower coating layer is an n-type double-layer AD-type GeS stack which are both in an AD stack structure, and the thicknesses of the upper coating layer and the lower coating layer are 10-20 nm.
The double-layer AD type GeS stack and the double-layer rotating AB type GeS stack are stable stack structures; the second layer of the dual layer AD type GeS stack is shifted by half a period in the b direction relative to the first layer, and the second layer of the structure of the dual layer rotating AB type GeS stack is rotated by 180 ° relative to the first layer and then shifted by half a period in the a direction.
The double-layer AD type GeS stack and the double-layer rotating AB type GeS stack are obtained by dislocation of the initial structure through a probe stripping method.
The heterojunction employed is a type i heterojunction structure, which is generally defined as the band structure of the heterojunction: the conduction band bottom and the valence band top of the narrow-band material are both positioned in the forbidden band of the wide-band material, and the signs of delta Ec and delta Ev are opposite; thus the structure is defined as a double layer AD type GeS stack with CBM (tape guide bottom) above the double layer rotating AB type GeS stack and VBM (tape valence top) below the double layer rotating AB type GeS stack; and delta Ec is the energy difference between the bottom of the narrow-band and the bottom of the wide-band guide band, and delta ev is the energy difference between the top of the narrow-band and the top of the wide-band valence band.
The preparation method of the heterojunction laser comprises the following steps:
a. preparation of the substrate: HF soaking and etching, and carrying out vacuum deposition to obtain a Si substrate;
preparing a GeS film: b, preparing a GeS film through liquid phase reaction, and attaching the obtained GeS film to the substrate obtained in the step a;
c. preparation of a special GeS stack:
1) peeling the GeS film obtained by the method of probe peeling under an electron microscope to obtain GeS with a proper number of layers;
2) performing n-type doping on the GeS obtained in the step 1) through diffusion and injection doping processes, then stripping by using a probe under an electron microscope, moving the relative distance between layers or performing rotation conversion between the layers to obtain a required double-layer AD type GeS stack and a required double-layer rotating AB type GeS stack, and finally combining the two through the Van der Waals force between the layers to form a transverse heterojunction;
3) carrying out p-type doping on the structure by using the doping method in the step 2) to obtain a p-type GeS upper coating layer;
4) finally, a metal layer is respectively evaporated on the upper layer and the lower layer by a method of surface evaporation plating metal to be used as an upper electrode and a lower electrode.
The preparation of the substrate specifically comprises the following steps: the method comprises the following steps of (1) taking an n-Si (111) sheet as a substrate, soaking the Si sheet in HF to remove silicon dioxide on the surface, then washing the Si sheet for multiple times by using propanol, ethanol and deionized water to remove foreign matters on the surface of the silicon sheet, drying the Si sheet by using nitrogen, and putting the Si sheet into a vacuum quartz tube for deposition treatment; heating the quartz tube to 300 ℃, maintaining for 10-15min, and removing water vapor on the surface of the silicon wafer.
The preparation method of the GeS film comprises the following steps: respectively stirring germanium-dioxane chloride complex, thiourea and oleamide OLA in a metered ratio in air by a slight magnetic force; ultrasonically treating the stirred liquid mixture to remove air in the oleylamine; subsequently, the flask was connected to a Schlenk line, and vacuum was applied to remove moisture and oxygen; introducing nitrogen under magnetic stirring for inert gas protection; heating the treated liquid mixture, gradually changing the liquid into a yellow transparent solution along with the increase of the temperature, refluxing the reaction mixture in nitrogen flow for reaction, cooling the solution to room temperature after the reaction is finished, performing centrifugal separation on precipitate, washing, attaching the obtained film on a Si substrate, and performing vacuum drying for later use.
Has the advantages that:
1. the use of different stack structures to make a type i heterojunction the main body of a laser by lateral connection so-called type i heterojunction is generally defined as the band structure of the heterojunction behaves as: the conduction band bottom and the valence band top of the narrow-band material are both positioned in the forbidden band of the wide-band material, and the signs of delta Ec (energy difference between the narrow-band conduction band bottom and the wide-band conduction band bottom) and delta Ev (energy difference between the narrow-band conduction band top and the wide-band valence band top) are opposite; thus, the structure is defined as a double layer AD type GeS stack with the CBM (tape base) above the CBM of the double layer rotating AB type GeS stack and the VBM (tape top) below the VBM of the double layer rotating AB type GeS stack. The heterojunction can effectively realize population inversion, reduce injection current and improve the working efficiency of the semiconductor laser.
2. The invention selects two-dimensional materials, and the thickness of the materials can reach the atomic level, so that the semiconductor laser can be made to be extremely thin.
3. The invention adopts different stacking structures of the same material, and compared with heterojunction structures of different materials, the heterojunction structure is easier to achieve lattice matching, and the heterojunction film process is relatively simple.
Drawings
Fig. 1 is a schematic structural diagram of a heterojunction semiconductor laser with different stack structures of a double-layer GeS according to the present invention.
Fig. 2 shows the band distributions of a double layer AD type GeS stack and a double layer rotating AB type GeS stack.
Detailed Description
1. The invention relates to a heterojunction semiconductor laser, which is realized by different stacking structures of similar black phosphorus alkene, and the structure of the heterojunction semiconductor laser comprises the following components from bottom to top: the device comprises a lower electrode, a substrate, a lower coating layer, an active layer, an upper coating layer and an upper electrode; wherein, the active layer is a quantum well region.
In the heterojunction semiconductor laser, an active layer of an HD type heterojunction semiconductor laser is a transverse heterojunction, and the transverse heterojunction is composed of a double-layer AD type GeS stack and a double-layer rotating AB type GeS stack; the upper coating layer and the lower coating layer are respectively a p-type double-layer AD-type GeS stack and an n-type double-layer AD-type GeS stack.
In the heterojunction semiconductor laser, the upper coating layer is a p-type double-layer AD-type GeS stacked semiconductor, the lower coating layer is an n-type double-layer AD-type GeS stacked semiconductor, and the thicknesses of the materials of the upper coating layer and the lower coating layer can be processed to 10-20 nm.
The active layer is a transverse heterojunction and consists of a double-layer AD type GeS stack and a double-layer rotating AB type GeS stack; both the AD type GeS stack and the rotating AB type GeS stack are stable structures in a plurality of GeS stacks; the second layer of the AD stack GeS is shifted by half a period in the b direction relative to the first layer, and the second layer of the rotating AB-type GeS stack is shifted by 0.5 period in the a direction after rotating 180 ° relative to the first layer structure.
The heterojunction employed is a type i heterojunction structure, which is generally defined as the band structure of the heterojunction: the conduction band bottom and the valence band top of the narrow-band material are both positioned in the forbidden band of the wide-band material, and the signs of delta Ec (energy difference between the narrow-band conduction band bottom and the wide-band conduction band bottom) and delta Ev (energy difference between the narrow-band conduction band top and the wide-band valence band top) are opposite; thus, the structure is defined as a double layer AD type GeS stack with the CBM (tape base) above the CBM of the double layer rotating AB type GeS stack and the VBM (tape top) below the VBM of the double layer rotating AB type GeS stack. The heterojunction can effectively realize population inversion and improve the working efficiency of the semiconductor laser.
The preparation method of the heterojunction semiconductor laser comprises the following steps:
a. preparation of the substrate
In the method, an n-Si (111) sheet is used as a substrate, the Si sheet is soaked in HF to remove silicon dioxide on the surface, then propanol, ethanol and deionized water are used for washing the Si sheet for multiple times to remove foreign matters on the surface of the silicon wafer, the Si sheet is dried by nitrogen, and the Si sheet is placed in a vacuum quartz tube for deposition treatment; heating the quartz tube to 300 ℃, maintaining for 10-15min, and removing water vapor on the surface of the silicon wafer;
preparation of GeS film
0.2g of germanodichloride dioxane complex, 0.4g of thiourea and 20ml of oleamide OLA were respectively added into a 25ml three-necked flask and stirred slightly magnetically in the air; ultrasonically treating the stirred liquid mixture for 5min, and removing air in oleylamine; the three-necked flask was then attached to a Schlenk line and evacuated for 30min to remove moisture and oxygen; introducing nitrogen for 30min under magnetic stirring for inert gas protection; the treated liquid mixture was heated to 593k and the liquid gradually changed to a yellow clear solution as the temperature increased. The reaction mixture was refluxed at 593k in a nitrogen stream for 4 h; after the reaction is finished, cooling the solution to room temperature, performing precipitation centrifugal separation, washing the solution for multiple times by using deionized water and absolute ethyl alcohol, attaching the obtained film on a Si substrate, and performing vacuum drying at 40 ℃ for 4 hours for later use;
c. preparation of Special GeS stacks
1) Peeling the GeS film obtained by the method of probe peeling under an electron microscope to obtain GeS with a proper number of layers;
2) and (2) carrying out n-type doping on the GeS obtained in the step 1) through diffusion and injection doping processes, then stripping the structure by using a probe under an electron microscope, and moving the relative distance between layers or carrying out rotation conversion between layers to obtain the double-layer AD type GeS stack and the double-layer rotation AB type GeS stack required by the people. Finally, combining the two through the Van der Waals force between layers to form a transverse heterojunction;
3) carrying out p-type doping on the structure by using the doping method in the step 2) to obtain a p-type GeS upper coating layer;
4) and finally, respectively evaporating a thin aluminum layer on the upper layer and the lower layer by a surface evaporation metal method to be used as an upper back electrode and a lower back electrode.
In fig. 1, the heterojunction formed by the double-layer AD-type GeS stack and the double-layer rotating AB-type GeS stack is the core part of the semiconductor laser, and can convert electric energy into light energy under the condition of current injection. The reason for this is that: when the double-layer AD type GeS is contacted with the double-layer rotating AB type GeS, due to the fact that the energy band structures of the double-layer AD type GeS and the double-layer rotating AB type GeS are different, the arrangement of the conduction band bottom CBM and the valence band top VBM of the double-layer AD type GeS and the double-layer rotating AB type GeS forms an I type semiconductor, a depletion layer is formed on a contact interface, under the condition that bias voltage is applied, a large number of electrons and holes are injected into and penetrate through a depletion region, and a large number of carriers exist in the depletion region. The interval of the junction boundary contains a high concentration of electrons in the conduction band and holes in the valence band. When the concentration is sufficiently high, population inversion occurs. The core principle of a semiconductor laser is the inversion of the number of particles.
Examples
a. Preparation of the substrate
In the method, an n-Si (111) sheet is used as a substrate, the Si sheet is soaked in HF to remove silicon dioxide on the surface, then propanol, ethanol and deionized water are used for washing the Si sheet for multiple times to remove foreign matters on the surface of the silicon wafer, the Si sheet is dried by nitrogen, and the Si sheet is placed in a vacuum quartz tube for deposition treatment; heating the quartz tube to 300 ℃, maintaining for 10-15min, and removing water vapor on the surface of the silicon wafer;
preparation of GeS film
0.2g of germanodichloride dioxane complex, 0.4g of thiourea and 20ml of oleamide OLA were respectively added into a 25ml three-necked flask and stirred slightly magnetically in the air; ultrasonically treating the stirred liquid mixture for 5min, and removing air in oleylamine; the three-necked flask was then attached to a Schlenk line and evacuated for 30min to remove moisture and oxygen; introducing nitrogen for 30min under magnetic stirring for inert gas protection; the treated liquid mixture was heated to 593k and the liquid gradually changed to a yellow clear solution as the temperature increased. The reaction mixture was refluxed at 593k in a nitrogen stream for 4 h; after the reaction is finished, cooling the solution to room temperature, performing precipitation centrifugal separation, washing the solution for multiple times by using deionized water and absolute ethyl alcohol, attaching the obtained film on a Si substrate, and performing vacuum drying at 40 ℃ for 4 hours for later use;
c. preparation of Special GeS stacks
1) Peeling the GeS film obtained by the method of probe peeling under an electron microscope to obtain GeS with a proper number of layers;
2) and (2) carrying out n-type doping on the GeS obtained in the step 1) through diffusion and injection doping processes, then stripping the structure by using a probe under an electron microscope, and moving the relative distance between layers or carrying out rotation conversion between layers to obtain the double-layer AD type GeS stack and the double-layer rotation AB type GeS stack required by the people. Finally, combining the two through the Van der Waals force between layers to form a transverse heterojunction;
3) carrying out p-type doping on the structure by using the doping method in the step 2) to obtain a p-type GeS upper coating layer;
4) and finally, respectively evaporating a thin aluminum layer on the upper layer and the lower layer by a surface evaporation metal method to be used as an upper back electrode and a lower back electrode.
Claims (8)
1. The utility model provides a heterojunction laser, its characterized in that realizes HD type heterojunction semiconductor laser with the different stack structures of double-deck stack class black phosphorus alkene, and this heterojunction semiconductor laser's structure includes from bottom to top: the device comprises a lower electrode (1), a substrate (2), a lower coating layer (3), an active layer (4), an upper coating layer (5) and an upper electrode (6); the active layer is a transverse heterojunction, and the transverse heterojunction is formed by a double-layer AD type GeS stack and a double-layer rotating AB type GeS stack.
2. The laser according to claim 1, wherein the upper cladding layer (5) is a p-type dual-layer AD-type GeS stack, the lower cladding layer (3) is an n-type dual-layer AD-type GeS stack, both of which are AD stack structures, and the upper and lower cladding layers have a thickness of 10-20 nm.
3. The heterojunction laser of claim 1, wherein the double-layer AD-type GeS stack and the double-layer rotating AB-type GeS stack are both stable stack structures; the second layer of the dual layer AD type GeS stack is shifted by half a period in the b direction relative to the first layer, and the second layer of the structure of the dual layer rotating AB type GeS stack is rotated by 180 ° relative to the first layer and then shifted by half a period in the a direction.
4. The heterojunction laser of claim 1, wherein the double-layer AD-type GeS stack and the double-layer rotating AB-type GeS stack are obtained by dislocation of initial structures by probe lift-off.
5. A heterojunction laser as claimed in claim 1, wherein the heterojunction employed is a type i heterojunction structure, which is generally defined as the band structure of the heterojunction as: the conduction band bottom and the valence band top of the narrow-band material are both positioned in the forbidden band of the wide-band material, and the signs of delta Ec and delta Ev are opposite; thus the structure is defined as a double layer AD type GeS stack with CBM (tape guide bottom) above the double layer rotating AB type GeS stack and VBM (tape valence top) below the double layer rotating AB type GeS stack; and delta Ec is the energy difference between the bottom of the narrow-band and the bottom of the wide-band guide band, and delta ev is the energy difference between the top of the narrow-band and the top of the wide-band valence band.
6. A method for preparing a heterojunction laser as claimed in any one of claims 1 to 5, comprising the steps of:
a. preparation of the substrate: HF soaking and etching, and carrying out vacuum deposition to obtain a Si substrate;
preparing a GeS film: b, preparing a GeS film through liquid phase reaction, and attaching the obtained GeS film to the substrate obtained in the step a;
c. preparation of a special GeS stack:
1) peeling the GeS film obtained by the method of probe peeling under an electron microscope to obtain GeS with a proper number of layers;
2) performing n-type doping on the GeS obtained in the step 1) through diffusion and injection doping processes, then stripping by using a probe under an electron microscope, moving the relative distance between layers or performing rotation conversion between the layers to obtain a required double-layer AD type GeS stack and a required double-layer rotating AB type GeS stack, and finally combining the two through the Van der Waals force between the layers to form a transverse heterojunction;
3) carrying out p-type doping on the structure by using the doping method in the step 2) to obtain a p-type GeS upper coating layer;
4) finally, a metal layer is respectively evaporated on the upper layer and the lower layer by a method of surface evaporation plating metal to be used as an upper electrode and a lower electrode.
7. The method for fabricating a heterojunction laser according to claim 5, wherein the step a. the fabrication of the substrate is specifically: the method comprises the following steps of (1) taking an n-Si (111) sheet as a substrate, soaking the Si sheet in HF to remove silicon dioxide on the surface, then washing the Si sheet for multiple times by using propanol, ethanol and deionized water to remove foreign matters on the surface of the silicon sheet, drying the Si sheet by using nitrogen, and putting the Si sheet into a vacuum quartz tube for deposition treatment; heating the quartz tube to 300 ℃, maintaining for 10-15min, and removing water vapor on the surface of the silicon wafer.
8. The method for preparing a heterojunction laser as claimed in claim 5, wherein the specific method for preparing the GeS thin film is as follows: respectively stirring germanium-dioxane chloride complex, thiourea and oleamide OLA in a metered ratio in air by a slight magnetic force; ultrasonically treating the stirred liquid mixture to remove air in the oleylamine; subsequently, the flask was connected to a Schlenk line, and vacuum was applied to remove moisture and oxygen; introducing nitrogen under magnetic stirring for inert gas protection; heating the treated liquid mixture, gradually changing the liquid into a yellow transparent solution along with the increase of the temperature, refluxing the reaction mixture in nitrogen flow for reaction, cooling the solution to room temperature after the reaction is finished, performing centrifugal separation on precipitate, washing, attaching the obtained film on a Si substrate, and performing vacuum drying for later use.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110465099.2A CN113206447B (en) | 2021-04-28 | 2021-04-28 | Heterojunction laser and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110465099.2A CN113206447B (en) | 2021-04-28 | 2021-04-28 | Heterojunction laser and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113206447A true CN113206447A (en) | 2021-08-03 |
| CN113206447B CN113206447B (en) | 2022-08-02 |
Family
ID=77029150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110465099.2A Active CN113206447B (en) | 2021-04-28 | 2021-04-28 | Heterojunction laser and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113206447B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0820128A1 (en) * | 1996-07-17 | 1998-01-21 | Commissariat A L'energie Atomique | Method of assambling two structures and microoptical device obtained by using this method |
| JP2001053391A (en) * | 1992-09-10 | 2001-02-23 | Mitsubishi Electric Corp | Manufacture of semiconductor device and semiconductor laser, and quantum wire structure |
| CN106025798A (en) * | 2016-07-13 | 2016-10-12 | 东南大学 | Heterojunction semiconductor laser and manufacturing method thereof |
| CN106129811A (en) * | 2016-07-13 | 2016-11-16 | 东南大学 | A kind of method realizing laser semiconductor with the different stacking provisions of few layer black phosphorus |
| CN107017556A (en) * | 2017-04-10 | 2017-08-04 | 北京工业大学 | QCL based on multilayer two-dimension material hetero-junctions |
| EP3264541A1 (en) * | 2016-06-30 | 2018-01-03 | Commissariat À L'Énergie Atomique Et Aux Énergies Alternatives | Semiconductor laser source |
| CN111406340A (en) * | 2017-11-17 | 2020-07-10 | 富士胶片株式会社 | Solid electrolyte composition, sheet for all-solid-state secondary battery, electrode sheet for all-solid-state secondary battery, sheet for all-solid-state secondary battery, and method for producing all-solid-state secondary battery |
-
2021
- 2021-04-28 CN CN202110465099.2A patent/CN113206447B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001053391A (en) * | 1992-09-10 | 2001-02-23 | Mitsubishi Electric Corp | Manufacture of semiconductor device and semiconductor laser, and quantum wire structure |
| EP0820128A1 (en) * | 1996-07-17 | 1998-01-21 | Commissariat A L'energie Atomique | Method of assambling two structures and microoptical device obtained by using this method |
| EP3264541A1 (en) * | 2016-06-30 | 2018-01-03 | Commissariat À L'Énergie Atomique Et Aux Énergies Alternatives | Semiconductor laser source |
| CN106025798A (en) * | 2016-07-13 | 2016-10-12 | 东南大学 | Heterojunction semiconductor laser and manufacturing method thereof |
| CN106129811A (en) * | 2016-07-13 | 2016-11-16 | 东南大学 | A kind of method realizing laser semiconductor with the different stacking provisions of few layer black phosphorus |
| CN107017556A (en) * | 2017-04-10 | 2017-08-04 | 北京工业大学 | QCL based on multilayer two-dimension material hetero-junctions |
| CN111406340A (en) * | 2017-11-17 | 2020-07-10 | 富士胶片株式会社 | Solid electrolyte composition, sheet for all-solid-state secondary battery, electrode sheet for all-solid-state secondary battery, sheet for all-solid-state secondary battery, and method for producing all-solid-state secondary battery |
Non-Patent Citations (3)
| Title |
|---|
| YULIANG MAO 等: "Effect of stacking order and in-plane strain on the electronic properties of bilayer GeSe", 《PHYS. CHEM. CHEM. PHYS.》 * |
| 徐键 等: "不同先驱体溶液-凝胶法制备的硫化锗玻璃薄膜", 《硅酸盐学报》 * |
| 龙慧 等: "基于二维材料异质结可饱和吸收体的超快激光器", 《物理学报》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113206447B (en) | 2022-08-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6040189B2 (en) | Inverted multijunction solar cell with IV / III-V group hybrid alloy | |
| CN106025798B (en) | Heterojunction semiconductor laser and preparation method thereof | |
| JP2015073130A (en) | Four junction inverted metamorphic multi-junction solar cell with two metamorphic layers | |
| JP2010118666A (en) | Alternative substrate of inversion altered multi-junction solar battery | |
| JP2010263222A (en) | Multijunction solar cell with group iv/iii-v hybrid alloy | |
| JP2012004557A (en) | HIGH EFFICIENCY InGaAsN SOLAR CELL, AND MANUFACTURING METHOD THEREOF | |
| CN106129811B (en) | Method for realizing laser semiconductor by using different stacking structures of few layers of black phosphorus | |
| US20110155236A1 (en) | Nanowire Solar Cell and Manufacturing Method of the Same | |
| JP6950101B2 (en) | Flexible double-junction solar cell | |
| JP6446782B2 (en) | Compound semiconductor solar cell and method of manufacturing compound semiconductor solar cell | |
| US20170069782A1 (en) | Four-Junction Solar Cell and Fabrication Method | |
| JP2016509376A (en) | Photoactive device having a low bandgap active layer configured to improve efficiency and related methods | |
| US11245046B2 (en) | Multi-junction tandem laser photovoltaic cell and manufacturing method thereof | |
| JP2010186915A (en) | Solar cell | |
| CN113206447B (en) | Heterojunction laser and preparation method thereof | |
| JP2016082041A (en) | Compound semiconductor solar cell and manufacturing method of compound semiconductor solar cell | |
| US20120073658A1 (en) | Solar Cell and Method for Fabricating the Same | |
| TW201318189A (en) | Laminated body for manufacturing compound semiconductor solar cell, compound semiconductor solar cell, and method for manufacturing compound semiconductor solar cell | |
| CN102738267B (en) | Solar battery with superlattices and manufacturing method thereof | |
| CN110797427B (en) | Double heterojunction four-junction flexible solar cell for flip-chip growth and preparation method thereof | |
| CN210692559U (en) | Inverted-growth double-heterojunction four-junction flexible solar cell | |
| JP2004521489A (en) | Modified long-wavelength high-speed photodiode | |
| CN112289881B (en) | GaInP/GaAs/Ge/Si four-junction solar cell and preparation method thereof | |
| US20200194700A1 (en) | Heterojunction solar cell with hole transport layer and preparation method thereof | |
| RU2644992C2 (en) | Method of producing photoconverter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |