RU2644992C2 - Method of producing photoconverter - Google Patents

Method of producing photoconverter Download PDF

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RU2644992C2
RU2644992C2 RU2016121587A RU2016121587A RU2644992C2 RU 2644992 C2 RU2644992 C2 RU 2644992C2 RU 2016121587 A RU2016121587 A RU 2016121587A RU 2016121587 A RU2016121587 A RU 2016121587A RU 2644992 C2 RU2644992 C2 RU 2644992C2
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photoconverter
gaas
increasing
producing
algaas
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RU2016121587A
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RU2016121587A (en
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Гасан Абакарович Мустафаев
Арслан Гасанович Мустафаев
Наталья Васильевна Черкесова
Абдулла Гасанович Мустафаев
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Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ)
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

FIELD: chemistry.
SUBSTANCE: method of producing a photoconverter by forming in the pin-structure an i-layer based on indium arsenide InGaAs between the layers of GaAs and AlGaAs on GaAs substrates at a pressure of 4⋅10-7-10-8 Pa, temperature of 600-800°C and a growth rate of 2 E/s.
EFFECT: increasing the efficiency of conversion, ensuring processability, improving parameters, improving quality and increasing the yield percentage.
1 tbl

Description

Изобретение относится к электронной технике, в частности к технологии изготовления фотопреобразователя с повышенным коэффициентом полезного действия (КПД).The invention relates to electronic equipment, in particular to a technology for manufacturing a photoconverter with a high coefficient of performance (COP).

Известен способ изготовления фотопреобразователя [заявка на изобретение №1168070 Япония, МКИ H01L 31/04] путем формирования на стеклянной подложке слоев CdS и CdTe или CdS CuInSe2 и контакты к этим слоям. Контакты создают путем нанесения пасты, содержащее порошок Cu с размерами частиц 0,5-50 мкм, в котором добавлен порошок Cu с размерами частиц 0,1 мкм в количестве 50⋅10-4 масс. %. Затем пасту впекают при низкой температуре.A known method of manufacturing a photoconverter [application for invention No. 1168070 Japan, MKI H01L 31/04] by forming on a glass substrate layers of CdS and CdTe or CdS CuInSe 2 and contacts to these layers. Contact is created by applying a paste comprising Cu having a particle size of 0.5-50 microns powder in which Cu powder is added with a particle size of 0.1 microns in an amount 50⋅10 -4 wt. % Then the paste is baked at low temperature.

В таких приборах наблюдаются повышенные значения токов утечек и ухудшения параметров.In such devices, increased values of leakage currents and deterioration of parameters are observed.

Известен способ изготовления фотопреобразователя [заявка на изобретение №1138765 Япония, МКИ H01L 31/10] путем применения плазмохимического осаждения из паровой фазы для создания pin-структуры и использования слоев аморфного Si1-xCx:H, легированного фосфором. После напыления прозрачного электрода формируют pin-структуру: в ректоре 1 осуществляется формирование i-слоя, который завершается в реакторе 2, где производится формирование n-слоя.A known method of manufacturing a photoconverter [application for invention No. 1138765 Japan, MKI H01L 31/10] by using plasma-chemical vapor deposition to create a pin structure and use layers of amorphous Si 1-x C x : H doped with phosphorus. After spraying the transparent electrode, a pin structure is formed: in the reactor 1, the formation of the i-layer is carried out, which is completed in the reactor 2, where the formation of the n-layer is performed.

Недостатками способа являются:The disadvantages of the method are:

- низкий КПД;- low efficiency;

- низкая технологичность;- low manufacturability;

- высокие значения токов утечек.- high leakage currents.

Задача, решаемая изобретением: повышение КПД, обеспечение технологичности, улучшение параметров, повышение надежности и увеличение процента выхода годных.The problem solved by the invention: improving efficiency, ensuring manufacturability, improving parameters, improving reliability and increasing the percentage of yield.

Задача решается формированием в pin-структуре i-слоя на основе арсенида индия InGaAs между GaAs и AlGaAs на подложках GaAs, при давлении 4⋅10-7-10-8 Па, температуре 600-800°С и скорости роста 2

Figure 00000001
, с концентрацией NA=1012-1013 см-3.The problem is solved by the formation in the pin structure of an i-layer based on indium arsenide InGaAs between GaAs and AlGaAs on GaAs substrates, at a pressure of 4⋅10 -7 -10 -8 -8 Pa, a temperature of 600-800 ° С and a growth rate of 2
Figure 00000001
, with a concentration of N A = 10 12 -10 13 cm -3 .

Технология способа состоит в следующем: в pin-структуре выращивают i-слой из арсенида индия InGaAs, с концентрацией NA=1012-1013 см-3 при давлении 4⋅10-7-10-8 Па, температуре 600-800°С и скорости роста 2

Figure 00000001
.The technology of the method is as follows: in the pin structure, an i-layer of indium arsenide InGaAs is grown with a concentration of N A = 10 12 -10 13 cm -3 at a pressure of 4⋅10 -7 -10 -8 Pa, a temperature of 600-800 ° C and growth rate 2
Figure 00000001
.

Активный слой InGaAs заключен между слоями n - GaAs и р - AlGaAs. Активная область представляет собой последовательность нескольких слоев InGaAs - толщиной 2-3 нм. Использование нескольких слоев позволяет локализовать носители заряда в тонком слое активной области, увеличив вероятность рекомбинации, и, кроме того, свести до минимума поглощение излучения в полупроводниковой структуре, обеспечив тем самым высокий внешний квантовый выход. Образуется слой InGaAs, который способствует снижению механических напряжений за счет обеспечения согласования решеток GaAs и AlGaAs.An active InGaAs layer is sandwiched between n-GaAs and p-AlGaAs layers. The active region is a sequence of several InGaAs layers - 2-3 nm thick. The use of several layers makes it possible to localize charge carriers in a thin layer of the active region, increasing the probability of recombination, and, in addition, minimizing the absorption of radiation in a semiconductor structure, thereby ensuring a high external quantum yield. An InGaAs layer is formed, which helps to reduce mechanical stresses by ensuring matching of the GaAs and AlGaAs lattices.

По предлагаемому способу были изготовлены и исследованы фотоэлектрические преобразователи.According to the proposed method, photoelectric converters were manufactured and investigated.

Результаты обработки представлены в таблице.The processing results are presented in the table.

Figure 00000002
Figure 00000002

Figure 00000003
Figure 00000003

Экспериментальные исследования показали, что выход годных структур на партии пластин, изготовленных в оптимальном режиме, увеличился на 22,1%.Experimental studies have shown that the yield of structures on a batch of plates manufactured in the optimal mode increased by 22.1%.

Технический результат: повышение КПД преобразования, обеспечение технологичности, улучшение параметров, повышение качества и увеличение процента выхода годных.Effect: increasing conversion efficiency, ensuring manufacturability, improving parameters, improving quality and increasing yield.

Стабильность параметров во всем эксплуатационном интервале температур была нормальной и соответствовала требованиям.The stability of the parameters over the entire operating temperature range was normal and consistent with the requirements.

Предложенный способ изготовления фотопреобразователя путем формирования в pin-структуре i-слоя на основе арсенида индия InGaAs между GaAs и AlGaAs на подложках GaAs, при давлении 4⋅10-7-10-8 Па, температуре 600-800°С и скорости роста 2

Figure 00000001
позволяет повысить процент выхода годных структур и улучшить их надежность.The proposed method of manufacturing a photoconverter by forming in the pin structure an i-layer based on indium arsenide InGaAs between GaAs and AlGaAs on GaAs substrates, at a pressure of 4⋅10 -7 -10 -8 Pa, a temperature of 600-800 ° C and a growth rate of 2
Figure 00000001
allows to increase the percentage of yield of suitable structures and improve their reliability.

Claims (1)

Способ изготовления фотопреобразователя, включающий процессы плазмохимического осаждения, создания pin-структуры, отличающийся тем, что i-слой в pin-структуре формируют на основе InGaAs, между GaAs и AlGaAs на подложках GaAs, при давлении 4*10-7-10-8 Па, температуре 600-800°C и скорости роста 2 Å/с, с концентрацией NA=1012-1013 см-3.A method of manufacturing a photoconverter, including plasma-chemical deposition processes, creating a pin structure, characterized in that the i-layer in the pin structure is formed on the basis of InGaAs, between GaAs and AlGaAs on GaAs substrates, at a pressure of 4 * 10 -7 -10 -8 Pa , a temperature of 600-800 ° C and a growth rate of 2 Å / s, with a concentration of N A = 10 12 -10 13 cm -3 .
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2318272C1 (en) * 2006-06-05 2008-02-27 Федеральное государственное унитарное предприятие "НПО "ОРИОН", ФГУП "НПО "ОРИОН" METHOD FOR PRODUCING HIGH-SPEED MULTICOMPONENT PHOTODETECTORS BUILT AROUND EPITAXIAL STRUCTURES InGaAs/InP
US7696593B2 (en) * 2006-06-30 2010-04-13 Eudyna Devices Inc. PIN-type photo detecting element with three semiconductor layers, and window semiconductor layer having controlled thickness
RU2530458C1 (en) * 2013-04-23 2014-10-10 Российская Федерация, от имени которой выступает государственный заказчик - Министерство промышленности и торговли Российской Федерации METHOD OF PRODUCING MULTIELEMENT PHOTODETECTOR BASED ON EPITAXIAL InGaAs/InP STRUCTURES
US8866005B2 (en) * 2008-10-17 2014-10-21 Kopin Corporation InGaP heterojunction barrier solar cells
CN104538481A (en) * 2015-01-27 2015-04-22 苏州苏纳光电有限公司 InGaAs/QWIP (Quantum Well Infrared Photodetector) two-color infrared detector and preparation method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2318272C1 (en) * 2006-06-05 2008-02-27 Федеральное государственное унитарное предприятие "НПО "ОРИОН", ФГУП "НПО "ОРИОН" METHOD FOR PRODUCING HIGH-SPEED MULTICOMPONENT PHOTODETECTORS BUILT AROUND EPITAXIAL STRUCTURES InGaAs/InP
US7696593B2 (en) * 2006-06-30 2010-04-13 Eudyna Devices Inc. PIN-type photo detecting element with three semiconductor layers, and window semiconductor layer having controlled thickness
US8105866B2 (en) * 2006-06-30 2012-01-31 Eudyna Devices Inc. Method of making PIN-type photo detecting element with a controlled thickness of window semiconductor layer
US8866005B2 (en) * 2008-10-17 2014-10-21 Kopin Corporation InGaP heterojunction barrier solar cells
RU2530458C1 (en) * 2013-04-23 2014-10-10 Российская Федерация, от имени которой выступает государственный заказчик - Министерство промышленности и торговли Российской Федерации METHOD OF PRODUCING MULTIELEMENT PHOTODETECTOR BASED ON EPITAXIAL InGaAs/InP STRUCTURES
CN104538481A (en) * 2015-01-27 2015-04-22 苏州苏纳光电有限公司 InGaAs/QWIP (Quantum Well Infrared Photodetector) two-color infrared detector and preparation method thereof

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