RU2016121587A - A method of manufacturing a photoconverter - Google Patents

A method of manufacturing a photoconverter Download PDF

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Publication number
RU2016121587A
RU2016121587A RU2016121587A RU2016121587A RU2016121587A RU 2016121587 A RU2016121587 A RU 2016121587A RU 2016121587 A RU2016121587 A RU 2016121587A RU 2016121587 A RU2016121587 A RU 2016121587A RU 2016121587 A RU2016121587 A RU 2016121587A
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RU
Russia
Prior art keywords
photoconverter
manufacturing
pin structure
gaas
algaas
Prior art date
Application number
RU2016121587A
Other languages
Russian (ru)
Other versions
RU2644992C2 (en
Inventor
Гасан Абакарович Мустафаев
Арслан Гасанович Мустафаев
Наталья Васильевна Черкесова
Абдулла Гасанович Мустафаев
Original Assignee
Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ)
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Filing date
Publication date
Application filed by Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) filed Critical Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ)
Priority to RU2016121587A priority Critical patent/RU2644992C2/en
Publication of RU2016121587A publication Critical patent/RU2016121587A/en
Application granted granted Critical
Publication of RU2644992C2 publication Critical patent/RU2644992C2/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Semiconductor Lasers (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Claims (1)

Способ изготовления фотопреобразователя, включающий процессы плазмохимического осаждения, создания pin-структуры, отличающийся тем, что i-слой в pin-структуре формируют на основе InGaAs, между GaAs и AlGaAs на подложках GaAs, при давлении 4•10-7-10-8 Па, температуре 600-800°C и скорости роста 2 Å/с, с концентрацией NA=1012-1013 см-3.A method of manufacturing a photoconverter, including processes of plasma-chemical deposition, creating a pin structure, characterized in that the i-layer in the pin structure is formed on the basis of InGaAs, between GaAs and AlGaAs on GaAs substrates, at a pressure of 4 • 10 -7 -10 -8 Pa , a temperature of 600-800 ° C and a growth rate of 2 Å / s, with a concentration of N A = 10 12 -10 13 cm -3 .
RU2016121587A 2016-05-31 2016-05-31 Method of producing photoconverter RU2644992C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU2016121587A RU2644992C2 (en) 2016-05-31 2016-05-31 Method of producing photoconverter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU2016121587A RU2644992C2 (en) 2016-05-31 2016-05-31 Method of producing photoconverter

Publications (2)

Publication Number Publication Date
RU2016121587A true RU2016121587A (en) 2017-12-05
RU2644992C2 RU2644992C2 (en) 2018-02-15

Family

ID=60581123

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2016121587A RU2644992C2 (en) 2016-05-31 2016-05-31 Method of producing photoconverter

Country Status (1)

Country Link
RU (1) RU2644992C2 (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2318272C1 (en) * 2006-06-05 2008-02-27 Федеральное государственное унитарное предприятие "НПО "ОРИОН", ФГУП "НПО "ОРИОН" METHOD FOR PRODUCING HIGH-SPEED MULTICOMPONENT PHOTODETECTORS BUILT AROUND EPITAXIAL STRUCTURES InGaAs/InP
JP5197930B2 (en) * 2006-06-30 2013-05-15 住友電工デバイス・イノベーション株式会社 Manufacturing method of semiconductor light receiving element
US8866005B2 (en) * 2008-10-17 2014-10-21 Kopin Corporation InGaP heterojunction barrier solar cells
RU2530458C1 (en) * 2013-04-23 2014-10-10 Российская Федерация, от имени которой выступает государственный заказчик - Министерство промышленности и торговли Российской Федерации METHOD OF PRODUCING MULTIELEMENT PHOTODETECTOR BASED ON EPITAXIAL InGaAs/InP STRUCTURES
CN104538481B (en) * 2015-01-27 2016-10-05 苏州苏纳光电有限公司 InGaAs/QWIP Two-color Infrared Detectors and preparation method thereof

Also Published As

Publication number Publication date
RU2644992C2 (en) 2018-02-15

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MM4A The patent is invalid due to non-payment of fees

Effective date: 20180601