CN113206068A - 半导体封装件和其制造方法 - Google Patents

半导体封装件和其制造方法 Download PDF

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Publication number
CN113206068A
CN113206068A CN202010946031.1A CN202010946031A CN113206068A CN 113206068 A CN113206068 A CN 113206068A CN 202010946031 A CN202010946031 A CN 202010946031A CN 113206068 A CN113206068 A CN 113206068A
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semiconductor
semiconductor die
die
corner
dies
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CN202010946031.1A
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沈文维
黄松辉
侯上勇
黄冠育
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Publication of CN113206068A publication Critical patent/CN113206068A/zh
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Abstract

一种半导体封装件包含插入件、管芯、密封体。每一管芯包含有源表面、背侧表面、侧表面。背侧表面与有源表面相对。侧表面使有源表面接合到背侧表面。密封体包含第一材料且横向地包覆管芯。管芯电连接到插入件且并排安置在插入件上，其中相应背侧表面背对插入件。至少一个管芯包含外部角。圆角结构形成在外部角处。圆角结构包含不同于第一材料的第二材料。外部角由至少一个管芯的背侧表面和一对相邻侧表面形成。一对相邻侧表面中的侧表面具有一共同第一边缘。一对相邻侧表面中的每一侧表面不面向其它管芯并且具有与至少一个管芯的背侧表面共同的一第二边缘。

Description

半导体封装件和其制造方法
背景技术
通常在单个半导体晶片上制造用于例如行动电话和其它移动电子设备的各种电子装置中的半导体器件和集成电路。晶片的管芯可在晶片级与其它半导体器件或管芯一起处理和封装，且已针对晶片级封装研发各种技术和应用。多个半导体器件的整合已成为所述领域中的挑战。
发明内容
根据本公开的一些实施例，一种半导体封装件包含插入件、半导体管芯以及密封体。每一半导体管芯包含有源表面、背侧表面以及侧表面。背侧表面与有源表面相对。侧表面使有源表面接合到背侧表面。密封体包含第一材料且横向地包覆(wrap)半导体管芯。半导体管芯电连接到插入件且并排安置在插入件上，其中相应背侧表面背对插入件。半导体管芯中的至少一个半导体管芯包含外部角。圆角结构形成在至少一个半导体管芯的外部角处。圆角结构包含不同于第一材料的第二材料。外部角由至少一个半导体管芯的背侧表面和至少一个半导体管芯的侧表面中的一对相邻侧表面形成。所述一对相邻侧表面中的侧表面具有一共同第一边缘。所述一对相邻侧表面中的每一侧表面不面向其它半导体管芯且具有与至少一个半导体管芯的背侧表面共同的一第二边缘。
根据本公开的一些实施例，一种半导体封装件包含第一半导体衬底、半导体管芯、底填充料、角衬垫以及密封体。第一半导体衬底具有穿过其形成的半导体穿孔。半导体管芯并排安置在第一半导体衬底上且电连接到半导体穿孔。底填充料安置在第一半导体衬底与半导体管芯之间。角衬垫与半导体管芯中的一个半导体管芯实体接触。角衬垫安置在与一个半导体管芯的外部角对应的底填充料上。角衬垫包含第一材料。密封体包含不同于第一材料的第二材料。密封体安置在第一半导体衬底上。密封体横向地包覆半导体管芯、角衬垫以及底填充料。
根据本公开的一些实施例，一种半导体封装件的制造方法包含至少以下步骤。半导体管芯经由连接件电连接到插入件。连接件安置在半导体管芯的有源表面处。围绕连接件以及在相邻半导体管芯之间的间隙中在插入件上分配填充材料。固化填充材料以形成底填充料。圆角结构形成在半导体管芯中的第一半导体管芯的背侧表面上。背侧表面与第一半导体管芯的有源表面相对。圆角结构包含第一材料。形成横向地包覆半导体管芯和底填充料的密封体。密封体包含第二材料。圆角结构与密封体接触。第一材料不同于第二材料。
附图说明
当结合附图阅读时根据以下详细描述最好地理解本公开的各方面。应注意，根据业界中的标准惯例，各种特征未按比例绘制。实际上，为了论述清楚起见，可任意地增大或减小各种特征的尺寸。
图1A到图1K是示出根据本公开的一些实施例的半导体封装件的制造工艺的示意性横截面图。
图1L是根据本公开的一些实施例的半导体器件的示意性横截面图。
图2是示出根据本公开的一些实施例的半导体封装件的制造工艺的示意性横截面图。
图3是根据本公开的一些实施例的半导体封装件的透视图。
图4A到图4D是根据本公开的一些实施例的半导体封装件的示意性俯视图。
具体实施方式
以下公开内容提供用于实施所提供主题的不同特征的多个不同实施例或实例。下文描述组件和布置的具体实例以简化本公开。当然，这些组件和布置仅是实例且并不希望为限制性的。举例来说，在以下描述中，第一特征在第二特征上方或第二特征上的形成可包含第一特征与第二特征直接接触地形成的实施例，且还可包含可在第一特征与第二特征之间形成额外特征以使得第一特征与第二特征可以不直接接触的实施例。另外，本公开可在各种实例中重复附图标记和/或字母。这种重复是出于简化和清楚的目的并且本身并不指示所论述的各种实施例和/或配置之间的关系。
此外，为易于描述，本文中可使用空间相对术语，例如“在…下方”、“下方”、“下部”、“在…上方”、“上部”等等来描述如图式中所示出的一个元件或特征与另一元件或特征的关系。除图式中所描绘的定向以外，空间相对术语意图涵盖器件在使用或操作中的不同定向。装置可以其它方式定向(旋转90度或处于其它定向)，且本文中所使用的空间相对描述词可同样相应地进行解释。
还可包含其它特征和工艺。举例来说，可包含测试结构以辅助对3D封装或3DIC器件的校验测试。测试结构可包含例如形成在重布线层中或衬底上的测试垫，所述衬底允许对3D封装或3DIC的测试、对探针和/或探针卡的使用等等。可对中间结构以及最终结构执行校验测试。另外，本文中所公开的结构和方法可与并有已知良好管芯的中间校验的测试方法结合使用以增加良率并降低成本。
图1A到图1L是示出根据本公开的一些实施例的半导体封装件10和半导体器件15的制造工艺的示意性横截面图。参考图1A，提供了插入件100a。在一些实施例中，插入件100a包含半导体衬底110a、半导体穿孔(through semiconductor via；TSV)120以及接触垫130。在一些实施例中，插入件100a包含硅晶片。在一些实施例中，半导体衬底110a可由半导体材料(例如周期表的第III-V族的半导体材料)制成。在一些实施例中，半导体衬底110a包含：元素半导体材料，例如硅或锗；化合物半导体材料，例如碳化硅、砷化镓、砷化铟或磷化铟；或合金半导体材料，例如硅锗、碳化硅锗、磷化镓砷或磷化镓铟。在一些实施例中，半导体衬底110a包含有源组件(例如，晶体管或类似物)且视情况包含形成在其中的无源组件(例如，电阻器、电容器、电感器或类似物)。
在一些实施例中，如图1A中所示出，TSV 120形成在半导体衬底110a中，且接触垫130形成在与TSV 120对应的半导体衬底110a上。在一些实施例中，接触垫130在半导体衬底110a的顶部表面110t上部分地延伸。在一些实施例中，将其上形成有接触垫130的半导体衬底110a的顶部表面110t视为插入件100a的顶部表面100t。在一些实施例中，接触垫130形成在TSV 120的端部120a上，且同一TSV 120的另一端部120b嵌入于半导体衬底110a中。也就是说，TSV 120从接触垫130延伸到半导体衬底110a中而不到达半导体衬底110a的底部表面110b(暂时地，插入件100a的底部表面100b)。应了解，图1A中示出的TSV 120的数量仅用于说明，且本公开不限于此。在一些实施例中，插入件100a可包含更少或更多的TSV 120。在一些实施例中，TSV 120的材料和接触垫130的材料分别包含铝、钛、铜、镍、钨和/或其合金。TSV 120和接触垫130可由例如电镀、沉积和/或光刻及蚀刻来形成。
参考图1B，在一些实施例中，半导体管芯200A到半导体管芯200D安置在插入件100a上。在本公开中，当没有必要在半导体管芯200A到半导体管芯200D之间进行区分时，半导体管芯200A到半导体管芯200D可被统称为半导体管芯200。在一些实施例中，每一半导体管芯200包含半导体衬底210、接触垫220以及钝化层230。接触垫220可形成在半导体衬底210的前表面210a上。钝化层230可覆盖半导体衬底210的前表面210a且具有暴露每一接触垫220的至少一部分的多个开口。在一些实施例中，半导体管芯200还可包含填充钝化层230的开口且电连接到接触垫220的多个接触柱240，以及围绕接触柱240的保护层250。
半导体衬底210由半导体材料制成，类似于先前参考插入件100a的半导体衬底110a所论述的半导体材料。在一些实施例中，半导体衬底210包含有源组件(例如，晶体管或类似物)且视情况包含形成在其中的无源组件(例如，电阻器、电容器、电感器或类似物)。在某些实施例中，接触垫220包含铝衬垫、铜衬垫或其它合适的金属衬垫。在一些实施例中，钝化层230可以是单层结构或多层结构，包含氧化硅层、氮化硅层、氮氧化硅层、由其它合适的介电材料形成的介电层或其组合。在一些实施例中，接触柱240的材料包含铜、铜合金或其它导电材料，且可通过沉积、镀覆或其它合适的技术形成。在一些实施例中，安置在插入件100a上的半导体管芯200中的任一个可呈现与刚刚所论述的半导体管芯类似的特征。每一半导体管芯200可以是独立的或包含逻辑管芯，例如中央处理单元(central processingunit；CPU)管芯、图形处理单元(graphic processing unit；GPU)管芯、微控制单元(microcontrol unit；MCU)管芯、输入-输出(input-output；I/O)管芯、基带(baseband；BB)管芯或应用处理器(application processor；AP)管芯。在一些实施例中，一或多个半导体管芯200可以是存储器管芯。本公开并不受安置在插入件100a上的半导体管芯200的类型或数量的限制。
在一些实施例中，半导体管芯200经由连接件300接合到插入件100a。在一些实施例中，连接件300是安装在接触柱240上且包夹在接触柱240与接触垫130或TSV 120(在接触垫130未形成在插入件100a中的情况下)之间的微凸块。根据一些实施例，半导体管芯200安置为有源表面200a(暴露接触柱240或在不包含接触柱240时暴露接触垫220的表面)面向插入件100a。与有源表面200a相对的背侧表面200b可安置在更远离插入件100a处。在一些实施例中，半导体衬底210的背侧表面210b构成对应半导体管芯200的背侧表面200b。半导体管芯200A到半导体管芯200D可另外具有使背侧表面210b与相对前表面210a接合的侧表面200s。
在一些实施例中，半导体管芯200A到半导体管芯200D以阵列配置形式安置在插入件上。举例来说，半导体管芯200A到半导体管芯200D可安置成一排，其中半导体管芯200A和半导体管芯200D在所述排的首尾，且半导体管芯200B、半导体管芯200C安置在中间。举例来说，半导体管芯200B可安置在半导体管芯200A与半导体管芯200C之间，且半导体管芯200C可安置在半导体管芯200B与半导体管芯200D之间。在一些实施例中，半导体管芯200A和半导体管芯200D包含共用一边缘(edge)且不面向其它半导体管芯200A到半导体管芯200D的至少两个侧表面200s。如此，半导体管芯200A和半导体管芯200D可被称作外部半导体管芯。另一方面，半导体管芯200B和半导体管芯200C并未包含共用一边缘且不面向其它半导体管芯200A到半导体管芯200D的侧表面200s。如此，半导体管芯200B和半导体管芯200C可被称作内部半导体管芯。在一些实施例中，半导体管芯200A到半导体管芯200D可具有细长形状，且可相对于彼此平行地安置在插入件100a上。在一些实施例中，半导体管芯200A到半导体管芯200D可分别呈现不同形状。在一些实施例中，半导体管芯200A到半导体管芯200D的面对的侧表面200s可在阵列中的相邻半导体管芯200A到半导体管芯200D之间形成微小间隙G。举例来说，图1B中指示了半导体管芯200B和半导体管芯200C的面对的侧表面200s之间的间隙G。类似间隙G也形成在半导体管芯200A与半导体管芯200B之间以及半导体管芯200C与半导体管芯200D之间。在一些实施例中，间隙G的宽度被视为形成间隙G的半导体管芯(例如半导体管芯200B与半导体管芯200C)的侧表面200s之间的距离。侧表面200s被视为使半导体管芯200A到半导体管芯200D的有源表面200a与对应背侧表面200b接合的表面。
在一些实施例中，参考图1C和图1D，底填充料400可安置在半导体管芯200A到半导体管芯200D与插入件100a之间以保护连接件300免受热应力或物理应力的影响且确保半导体管芯200A到半导体管芯200D与插入件100a的电连接。在一些实施例中，底填充料400由毛细型底填充料填充(capillary underfill filling；CUF)形成。分配器(图中未示)可沿半导体管芯200A到半导体管芯200D的周边施加填充材料400a。在一些实施例中，可应用加热和/或减小的压力，以使填充材料400a通过毛细作用穿入由半导体管芯200A到半导体管芯200D与插入件100a之间的连接件300定义的空隙中。在一些实施例中，填充材料400a进一步穿入相邻半导体管芯200A到半导体管芯200D之间的间隙G中。填充材料400a填充间隙G的程度可取决于填充材料400a的粘度以及间隙G的大小和形状，以及分配步骤所采用的条件。在一些实施例中，执行固化工艺(由图1C中的弯曲箭头示意性地表示)以巩固填充材料400a且形成底填充料400。在一些实施例中，如图1D中所示，单个底填充料400可取决于半导体管芯200A到半导体管芯200D在插入件100a上方的间距和相对方位而在半导体管芯200A到半导体管芯200D下方延伸。在一些替代实施例中，形成多个底填充料部分(图中未示)，每一部分固定半导体管芯200A到半导体管芯200D的连接件300。在一些实施例中，填充材料400a包含有机聚合物。在一些实施例中，填充材料400a包含环氧树脂、苯酚树脂、聚烯烃、丙烯酸树脂、聚酰亚胺、苯并环丁烯(benzocyclobutene；BCB)、聚苯并恶唑(polybenzooxazole；PBO)或任何其它合适的聚合物类介电材料。在一些实施例中，填充材料400a的粘度在150℃的温度下可介于0.1(Pa s)与10(Pa s)之间的范围内。在一些实施例中，填充材料400a的固化温度可介于100℃与400℃之间的范围内。在一些实施例中，填充材料400a可以是聚酰亚胺。
在一些实施例中，参考图1E，角衬垫材料(corner padding material)500a可安置在外部半导体管芯200A和外部半导体管芯200D的外部角OC上。在一些实施例中，角衬垫材料500a在半导体衬底210邻近于外部角OC的背侧表面210b的一部分上延伸，且沿着与背侧表面210b形成外部角OC的侧表面200s延伸。在一些实施例中，角衬垫材料500a安置在外部半导体管芯200A、外部半导体管芯200D的外部角OC上。外部角OC由共用一边缘且不面向阵列的其它半导体管芯200A到半导体管芯200D的相邻侧表面200s形成。举例来说，在图1E的横截面图中，外部半导体管芯是半导体管芯200A和半导体管芯200D，这是因为半导体管芯200A和半导体管芯200D中的每一个包含不面向阵列的另一半导体管芯200A到半导体管芯200D的至少一对相邻侧表面200s。举例来说，半导体管芯200A具有并不面向阵列的其它半导体管芯200B到半导体管芯200D的至少一对相邻侧表面200s。类似地，半导体管芯200D具有并不面向阵列的其它半导体管芯200A到半导体管芯200C的至少一对相邻侧表面200s。以半导体管芯200A为例，外部角OC由半导体衬底210的背侧表面210b、由图1E中的半导体管芯200A的左侧表面200s以及由图1E中的面向视点的侧表面200s形成。半导体管芯200A的第二外部角(图1E中未显示)由背侧表面210b、半导体管芯200A的左侧表面200s以及由与图1E中的面向视点的半导体管芯200A的侧表面200s相对的半导体管芯200A的侧表面(图1E中未显示)形成。在一些实施例中，分配器(图中未示)可将角衬垫材料500a施加在外部半导体管芯200A和外部半导体管芯200D的外部角OC上。在一些实施例中，角衬垫材料500a可通过丝网印刷工艺或其它适合的工艺施加。在一些实施例中，角衬垫材料500a可具有球状形状，所述球状形状具有磨圆的外部轮廓。在一些实施例中，角衬垫材料500a包含有机聚合物。在一些实施例中，角衬垫材料500a包含环氧树脂、苯酚树脂、聚烯烃、丙烯酸树脂、聚酰亚胺、苯并环丁烯(BCB)、聚苯并恶唑(PBO)或任何其它合适的聚合物类介电材料。在一些实施例中，角衬垫材料500a的粘度可在150℃的温度下介于0.1(Pa s)到10(Pa s)的范围内。在一些实施例中，角衬垫材料500a可选择为具有比填充材料400a(图1C中所示)更高的粘度。在一些实施例中，角衬垫材料500a的更高粘度允许角衬垫材料500a保持它的形状直到执行后续固化工艺为止。在一些实施例中，参考图1E和图1F，执行固化工艺(由图1E中的箭头示意性地表示)以巩固角衬垫材料500a且形成固化的角衬垫材料500b。在一些实施例中，角衬垫材料500a的固化温度可介于100℃与400℃之间的范围内。在一些实施例中，角衬垫材料500a选择为具有比填充材料400a更高的固化温度。
在一些实施例中，参考图1F，密封材料600a可安置在插入件100a上以密封半导体管芯200A到半导体管芯200D、底填充料400以及固化的角衬垫材料500b。在一些实施例中，密封材料600a包含模塑化合物、模塑底填充料、树脂(例如环氧树脂)或类似物。在一些实施例中，密封材料600a包含环氧树脂。另外，密封材料600a可包含掺杂在其中的填料610。填料610可以是球形或有棱角的颗粒，可具有纳米尺度大小且可由硅石、金属氧化物、玻璃纤维或类似物制成。在一些实施例中，填料610可包含于密封材料600a中，而固化的角衬垫材料500b和底填充料400中可不包含填料。在一些实施例中，密封材料600a通过覆模(over-molding)工艺形成。在一些实施例中，密封材料600a通过压缩模塑(compression molding)工艺形成。在一些实施例中，密封材料600a完全覆盖半导体管芯200A到半导体管芯200D、底填充料400以及固化的角衬垫材料500b。参考图1F和图1G，在一些实施例中，利用平坦化工艺去除密封材料600a的一部分直到暴露半导体管芯200A到半导体管芯200D的背侧表面200b为止，由此形成密封体600。在一些实施例中，密封材料600a的平坦化包含执行机械研磨工艺和/或化学机械抛光(chemical mechanical polishing；CMP)工艺。在一些实施例中，固化的角衬垫材料500b的一部分也在平坦化工艺期间去除以形成角衬垫500。也就是说，角衬垫500可具有截断的球状形状。在平坦化之后，半导体管芯200A到半导体管芯200D的背侧表面200b可与密封体600的顶部表面600t实质上共面且与角衬垫500的顶部表面500t实质上共面。
参考图1H，在一些实施例中，图1G的结构可在支撑框架SF上方翻转以暴露插入件100a的底部表面110b以用于进一步处理。参考图1H和图1I，在一些实施例中，从底部表面100b的侧边薄化半导体衬底110a以形成半导体衬底110。在一些实施例中，去除半导体衬底110a的一部分直到显露TSV120为止。在一些实施例中，TSV 120的端部120b可与薄化的半导体衬底110实质上齐平。在一些替代实施例(图中未示)中，在薄化半导体衬底110a之后，TSV120可相对于半导体衬底110的底部表面110b凸出。也就是说，TSV120的端部120b可位于比半导体衬底110的底部表面110b更高的水平高度处。在一些实施例中，可通过蚀刻工艺来去除半导体衬底110a的所述部分。蚀刻工艺包含例如各向同性蚀刻工艺和/或各向异性蚀刻工艺。举例来说，半导体衬底110a可通过湿式蚀刻工艺、干式蚀刻工艺或其组合进行薄化。在一些实施例中，还可在薄化半导体衬底110a期间去除TSV 120的部分。
参考图1J，在一些实施例中，重布线结构700形成在插入件100的底部表面100b上。在一些实施例中，重布线结构700包含介电层702、重布线导电层704以及多个凸块下金属706。为简单起见，介电层702示出为单个介电层，且重布线导电层704示出为嵌入于介电层702中。尽管如此，从制造工艺的角度，介电层702由至少两个介电层构成。重布线导电层704可由在一或多个金属化层级(tiers)中分布的多个重布线导电图案构成。重布线导电层704的重布线导电图案包夹在两个相邻介电层之间。重布线导电图案中的一些可竖直地延伸穿过介电层702，以在重布线结构700的不同金属化层级之间建立电连接。此外，重布线导电图案中的一些延伸穿过介电层702以到达TSV 120且与TSV 120建立电连接。也就是说，(最底部)介电层702可包含暴露TSV 120的端部120b的开口，且重布线导电层704可在(最底部)介电层702的开口内延伸以接触TSV 120。在一些实施例中，(最外部)介电层702可经图案化以暴露下方重布线导电层704。凸块下金属706可视情况在暴露重布线导电层704的(最外部)介电层702的开口中共形地形成。在一些实施例中，凸块下金属706在(最外部)介电层702的暴露表面的部分上方进一步延伸。在一些实施例中，凸块下金属706包含多个堆叠层。举例来说，凸块下金属706可包含堆叠在晶种层上的一或多个金属层。
在一些实施例中，重布线导电层704和凸块下金属706的材料包含铝、钛、铜、镍、钨或其合金。重布线导电层704和凸块下金属706可由例如电镀、沉积和/或光刻及蚀刻形成。在一些实施例中，介电层702的材料包含聚酰亚胺、环氧树脂、丙烯酸树脂、苯酚树脂、苯并环丁烯(BCB)、聚苯并恶唑(PBO)或任何其它合适的聚合物类介电材料。介电层702可例如由合适的制作技术形成，所述合适的制作技术例如旋涂法、化学气相沉积(chemical vapordeposition；CVD)、等离子体增强化学气相沉积(plasma-enhanced chemical vapordeposition；PECVD)或类似物。在一些实施例中，可通过半加成工艺、镶嵌工艺、双重镶嵌工艺或类似工艺制造重布线结构700。
应注意，图1J中示出的介电层702的数量、重布线导电层704的金属化层级的数量以及凸块下金属706的数量仅是出于说明性目的，且本公开不限于此。在一些替代实施例中，可取决于电路设计而形成更少或更多的介电层702、更少或更多的重布线导电层704的金属化层级以及更少或更多的凸块下金属706。当需要更多重布线导电层704的金属化层级和更多层介电层702时，重布线导电层704的金属化层级仍然与介电层702的各层交替地堆叠。
在一些实施例中，导电端子800形成在重布线结构700上。在一些实施例中，导电端子800形成在凸块下金属706上，且经由重布线导电层704连接到TSV 120和半导体管芯200A到半导体管芯200D。在一些实施例中，导电端子800通过助焊剂附接到凸块下金属706。在一些实施例中，导电端子800是可控塌陷芯片连接(controlled collapse chip connection；C4)凸块。在一些实施例中，导电端子800包含具有低电阻率的导电材料，例如Sn、Pb、Ag、Cu、Ni、Bi或其合金。在一些实施例中，重布线结构700是视情况存在的且可省略，并且导电端子800可直接形成在TSV 120上。
在一些实施例中，在去除支撑框架SF之后，获得半导体封装件10。在一些实施例中，图1A到图1K中示出的步骤可被称作“晶片上芯片(chip on wafer；CoW)级封装”。如图1K中所示出，半导体管芯200A到半导体管芯200D安置在插入件100上。换句话说，多个半导体管芯200A到半导体管芯200D整合到单个半导体封装件10中。因而，半导体封装件10可被称作“集成电路上系统(system on integrated circuit；SOIC)封装件”。在一些实施例中，通过图1A到图1K中呈现的适配步骤，可以较低成本将异质或同质半导体组件有效地整合到单个半导体封装件中。举例来说，已知良好管芯可以低成本有效地与半导体晶片或另一半导体管芯整合。
在一些实施例中，半导体封装件10包含经由连接件300连接到插入件100的半导体管芯200A到半导体管芯200D。底填充料400安置在半导体管芯200A到半导体管芯200D与插入件100之间以保护连接件300免受热应力和物理应力。半导体管芯200A到半导体管芯200D可以阵列配置形式安置在插入件100上。角衬垫500可安置在外部半导体管芯200A和外部半导体管芯200D的外部角OC处。在一些实施例中，角衬垫500部分地覆盖形成外部角OC的外部半导体管芯200A和外部半导体管芯200D的侧表面200s。在一些实施例中，底填充料400也可部分地覆盖由角衬垫500覆盖的相同侧表面200s。在一些实施例中，底填充料400至少部分地插入于角衬垫500与侧表面200s之间。也就是说，底填充料400可具有从侧表面200s延伸到插入件100的倾斜表面400s，且角衬垫500可安置在倾斜表面400s的初始区段(更接近于半导体管芯200A或半导体管芯200D)上。角衬垫500也与底填充料400和密封体600直接接触。在一些实施例中，角衬垫500具有截断的球状形状，且形成对应半导体管芯200A和半导体管芯200D(半导体管芯200A到半导体管芯200D中的外部半导体管芯)的圆角结构RCS。在一些实施例中，圆角结构RCS减轻外部半导体管芯200A和外部半导体管芯200D的半导体衬底210与密封体600之间的界面处可能出现的机械角应力。在一些实施例中，通过在外部半导体管芯200A和外部半导体管芯200D的外部角OC处设置圆角结构RCS，可减少对应于外部角OC的由密封体600所经历的机械应力，且可减少裂缝的发生。也就是说，通过设置外部半导体管芯200A和外部半导体管芯200D的圆角结构RCS，可增强半导体封装件10的机械稳定性，且可增加半导体封装件10的可靠性和寿命。在一些实施例中，甚至在半导体封装件10是大规模半导体封装件时，可通过设置圆角结构RCS(例如通过包含角衬垫500)来有效地减小机械角应力。
参考图1L，在一些实施例中，半导体封装件10可整合于较大半导体器件15中。举例来说，半导体封装件10可经由导电端子800连接到电路衬底900。在一些实施例中，导电端子800与形成在电路衬底900的表面上的接触垫902建立电接触。在一些实施例中，电路衬底900可以是底板(mother board)、印刷电路板或类似物。在一些实施例中，半导体器件15可被称作衬底上晶片上芯片(Chip on Wafer on Substrate；CoWoS)半导体器件。在一些实施例中，底填充料1000可设置在电路衬底900上以保护导电端子800免受热应力或机械应力。在一些实施例中，底填充料1000的材料可与半导体封装件10中所包含的底填充料400的材料不同。
图2是根据一些替代实施例的在半导体封装件10的制造方法期间产生的结构的示意性横截面图。图2的结构可通过以下根据图1B中示出的结构获得：在不执行中间固化步骤的情况下，在插入件100a上提供填充材料400a且在半导体管芯200A和半导体管芯200D上提供角衬垫材料500a。也就是说，填充材料400a可与相对于图1C所描述的操作类似地分配于插入件100a上，且角衬垫材料500a可在填充材料400a固化之前安置在半导体管芯200A和半导体管芯200D以及填充材料400a上。也就是说，角衬垫材料500a和填充材料400a可在同一固化步骤期间一起固化。在一些实施例中，可选择合适的材料组合以一起固化填充材料400a和角衬垫材料500a。举例来说，可针对填充材料400a选择第一聚酰亚胺，且可针对角衬垫材料500a选择第二聚酰亚胺。在一些实施例中，在150℃下，第二聚酰亚胺的粘度可高于第一聚酰亚胺的粘度。在这种情况下，填充材料400a和角衬垫材料500a可例如在100℃到400℃范围内所包括的固化温度下一起固化持续介于2小时到12小时范围内所包括的时间。在固化之后，半导体封装件10的制造工艺可沿循上文参考图1F到图1K所描述的步骤。
图3是根据本公开的一些实施例的半导体封装件10的示意性透视图。图4A是根据本公开的一些实施例的半导体封装件10的示意性俯视图。图1A到图1K的横截面图是沿着图4A中所示出的线I-I截取的。图3和图4A的视图中示出：插入件100；半导体管芯200A到半导体管芯200D，其安置在直线阵列中且由密封体600横向地包围；底填充料400；角衬垫500；以及导电端子800。在图3中，为了说明的清楚起见，示出了将由密封体600覆盖的表面和元件，但是密封体600的材料不限于为透明的。类似地，为了说明的清楚起见，图3和图4A中省略可能包含于密封体600中的填料610(图1F中所示)。如图3和图4A的视图中所示出，直线阵列的外部半导体管芯200A和外部半导体管芯200D设置为在外部角OC处具有圆角结构RCS。参考半导体管芯200D，外部角OC是由一对表面形成的角，所述一对表面在其之间共用一边缘且与背侧表面200b共用一边缘并且不面向相邻半导体管芯200C。举例来说，外部角OC是由侧表面200Ds2、侧表面200Ds3(其与侧表面200Ds2共用边缘200De3)以及背侧表面200b形成的一个角。如图3中所示出，侧表面200Ds2与背侧表面200b共用边缘200De1，且侧表面200Ds3与背侧表面200b共用边缘200De2。半导体管芯200D的另一外部角OC是由背侧表面200b与侧表面200Ds1和侧表面200Ds2的定义的一个角。背侧表面200b还与侧表面200Ds4共用一边缘，然而，侧表面200Ds4面向半导体管芯200C且因而侧表面200Ds4并不被视为形成外部角。出于相同原因，因为半导体管芯200C的侧表面200Cs4和侧表面200Cs2分别地面向半导体管芯200B和半导体管芯200D，所以半导体管芯200C不形成任何外部角且并不被认为是外部半导体管芯。所述相同原因适用于半导体管芯200B，而半导体管芯200A上包含其上设置有角衬垫500的两个外部角OC。然而，本公开并不限于此。在一些替代实施例中，角衬垫500可形成在任意角上，所述任意角由背侧表面200b与任意一对侧表面形成。举例来说，当相邻半导体管芯200之间的距离大于10微米时，额外的角衬垫500可形成在内部角上。在一些实施例中，相邻半导体管芯200之间的距离可介于10微米到500微米的范围内。
图4B是根据本公开的一些实施例的半导体封装件20的示意性俯视图。图4B的半导体封装件20与图4A的半导体封装件10之间的差异在于角衬垫502的形状也就是说，在图4B的半导体封装件20中，角衬垫具有沿着表面200As1或表面200As2中的每一个与背侧表面200b(例如，图3中所示出)之间的边缘的方向延长的形状。也就是说，当从俯视角度观察时，角衬垫502的轮廓可不同于圆扇形(如针对图4A的俯视图中的衬垫500所示出)。然而，因为角衬垫502没有呈现尖锐角，所以角衬垫502仍然可在外部半导体管芯200A和外部半导体管芯200D的外部角OC处提供圆角结构RCS。
图4C是根据本公开的一些实施例的半导体封装件30的示意性俯视图。图4C的半导体封装件30与图4A的半导体封装件10之间的差异在于以阵列配置形式安置的半导体管芯200A到半导体管芯200H的数量。在半导体封装件30中，八个半导体管芯200A到半导体管芯200H以两行乘四列的阵列形式安置。举例来说，半导体管芯200A面向同一行中的半导体管芯200B且面向同一列中的半导体管芯200E。在半导体封装件30的半导体管芯阵列中，半导体管芯200A、半导体管芯200E、半导体管芯200D以及半导体管芯200H是外部半导体管芯，这是因为每一半导体管芯具有一对相邻侧表面(例如半导体管芯200D的侧表面200Ds1与侧表面200Ds2)，所述一对相邻侧表面并不面向阵列中的其它半导体管芯(例如对于半导体管芯200D，并不面向半导体管芯200A到半导体管芯200C以及半导体管芯200E到半导体管芯200H)。每一外部半导体管芯200A、外部半导体管芯200E、外部半导体管芯200D、外部半导体管芯200H具有其上形成有角衬垫500的一个外部角OC。以半导体管芯200D为例，半导体管芯200D包含由背侧表面200b(例如，图3中所示出)与表面200Ds1和表面200Ds2形成的单个外部角OC。在半导体封装件30中，表面200Ds3(其在半导体封装件10中也形成外部角OC且具有形成在其上的角衬垫500，参看图4A)面向半导体管芯200H且因而并不形成外部角。
图4D是根据本公开的一些实施例的半导体封装件40的示意性俯视图。图4D的半导体封装件40与图4A的半导体封装件10之间的差异在于：设置外部半导体管芯200A和外部半导体管芯200D的外部角OC处的圆角结构RCS，而不形成角衬垫500(图4A中所示)。实际上，在例如经由激光切割步骤制造半导体封装件40期间，外部角OC为平滑的。在一些实施例中，通过使外部半导体管芯200A和外部半导体管芯200D的外部角OC平滑，背侧表面200b(例如，图1B中所示出)与密封体600之间的界面处的机械应力可减小，从而减少或防止密封体600中的裂缝的发生。如图4D中所示出，在一些实施例中，外部角OC是平滑的，而由背侧表面200b形成的其它角可能是尖锐的。举例来说，考虑到半导体管芯200A，背侧表面200b可与平滑的相邻侧表面200As1、侧表面200As2以及侧表面200As3的对形成外部角OC，且可结合不平滑的侧表面200As1或侧表面200As3与侧表面200As4形成角(尖锐角SC)。在一些实施例中，在形成密封体600之前且略过形成角衬垫500，可在图1D的结构上例如经由激光切割使外部角OC平滑。然而，本公开并不限于此。在一些替代实施例中，角衬垫500还可在外部角OC已经平滑之后形成在外部角OC上。
根据本公开的一些实施例，一种半导体封装件包含插入件、半导体管芯以及密封体。每一半导体管芯包含有源表面、背侧表面以及侧表面。背侧表面与有源表面相对。侧表面使有源表面接合到背侧表面。密封体包含第一材料且横向地包覆(wrap)半导体管芯。半导体管芯电连接到插入件且并排安置在插入件上，其中相应背侧表面背对插入件。半导体管芯中的至少一个半导体管芯包含外部角。圆角结构形成在至少一个半导体管芯的外部角处。圆角结构包含不同于第一材料的第二材料。外部角由至少一个半导体管芯的背侧表面和至少一个半导体管芯的侧表面中的一对相邻侧表面形成。所述一对相邻侧表面中的侧表面具有一共同第一边缘。所述一对相邻侧表面中的每一侧表面不面向其它半导体管芯且具有与至少一个半导体管芯的背侧表面共同的一第二边缘。
在一些实施例中，还包括形成所述圆角结构的角衬垫。在一些实施例中，还包括底填充料，所述底填充料安置为与所述至少一个半导体管芯的所述一对相邻侧表面以及所述角衬垫接触。在一些实施例中，所述底填充料至少部分地安置在所述角衬垫与所述至少一个半导体管芯的所述一对相邻侧表面之间。在一些实施例中，所述多个半导体管芯的所述背侧表面和所述角衬垫的顶部表面与所述密封体的顶部表面共面。在一些实施例中，所述至少一个半导体管芯包含半导体衬底，且所述半导体衬底的平滑角形成所述圆角结构。在一些实施例中，所述至少一个半导体管芯的所述背侧表面形成尖锐角以及一或多个平滑角。
根据本公开的一些实施例，一种半导体封装件包含第一半导体衬底、半导体管芯、底填充料、角衬垫以及密封体。第一半导体衬底具有穿过其形成的半导体穿孔。半导体管芯并排安置在第一半导体衬底上且电连接到半导体穿孔。底填充料安置在第一半导体衬底与半导体管芯之间。角衬垫与半导体管芯中的一个半导体管芯实体接触。角衬垫安置在与一个半导体管芯的外部角对应的底填充料上。角衬垫包含第一材料。密封体包含不同于第一材料的第二材料。密封体安置在第一半导体衬底上。密封体横向地包覆半导体管芯、角衬垫以及底填充料。
在一些实施例中，所述底填充料包含第三材料，且所述第一材料、所述第二材料以及所述第三材料彼此不同。在一些实施例中，所述第一材料包含第一聚酰亚胺，所述第二材料包含环氧树脂，且所述第三材料包含第二聚酰亚胺。在一些实施例中，所述底填充料包含从所述一个半导体管芯的一侧表面延伸到所述第一半导体衬底的一倾斜表面，所述一个半导体管芯的所述侧表面与所述一个半导体管芯的所述背侧表面共用一边缘，且所述角衬垫安置在所述倾斜表面上。在一些实施例中，还包括连接件，所述连接件安置在与所述一个半导体管芯的所述背侧表面相对的所述一个半导体管芯的有源表面处以在所述一个半导体管芯与所述半导体穿孔之间建立电连接，其中所述多个半导体管芯以阵列配置形式安置在所述第一半导体衬底上，所述一个半导体管芯包括一对相邻侧表面，所述一对相邻侧表面中的所述侧表面具有一共同第一边缘，所述一对相邻侧表面中的每一侧表面将所述一个半导体管芯的所述背侧表面连接到所述一个半导体管芯的所述有源表面且不面向所述阵列的其它半导体管芯；以及所述一个半导体管芯的所述背侧表面的所述外部角由所述一个半导体管芯的所述背侧表面和所述一个半导体管芯的所述一对相邻侧表面形成。在一些实施例中，所述一个半导体管芯的所述背侧表面形成第二外部角，且第二角衬垫形成在所述一个半导体管芯的所述第二外部角上。在一些实施例中，所述角衬垫的顶部表面与所述一个半导体管芯的所述背侧表面实质上共面。
根据本公开的一些实施例，一种半导体封装件的制造方法包含至少以下步骤。半导体管芯经由连接件电连接到插入件。连接件安置在半导体管芯的有源表面处。围绕连接件以及在相邻半导体管芯之间的间隙中在插入件上分配填充材料。固化填充材料以形成底填充料。圆角结构形成在半导体管芯中的第一半导体管芯的背侧表面上。背侧表面与第一半导体管芯的有源表面相对。圆角结构包含第一材料。形成横向地包覆半导体管芯和底填充料的密封体。密封体包含第二材料。圆角结构与密封体接触。第一材料不同于第二材料。
在一些实施例中，所述第一材料包含半导体材料；且形成所述圆角结构包括经由激光切割使所述第一半导体管芯的外部角平滑，所述第一半导体管芯的所述外部角由所述第一半导体管芯的所述背侧表面和所述第一半导体管芯的一对相邻侧表面形成，所述一对相邻侧表面中的所述侧表面具有一共同第一边缘，以及所述一对相邻侧表面中的每一侧表面不面向其它半导体管芯且具有与所述第一半导体管芯的所述背侧表面共同的一第二边缘。在一些实施例中，形成所述圆角结构包括在所述第一半导体管芯的外部角上形成角衬垫，所述第一半导体管芯的所述外部角由所述第一半导体管芯的所述背侧表面和所述第一半导体管芯的一对相邻侧表面形成，所述一对相邻侧表面中的所述侧表面具有一共同第一边缘，以及所述一对相邻侧表面中的每一侧表面不面向其它半导体管芯且具有与所述第一半导体管芯的所述背侧表面共同的一第二边缘。在一些实施例中，形成所述角衬垫包括：在所述第一半导体管芯上分配所述第一材料；以及固化所述第一材料，其中所述第一材料的粘度高于所述填充材料的粘度。在一些实施例中，分配所述填充材料以至少部分地覆盖所述第一半导体管芯的所述一对相邻侧表面，以及分配所述第一材料以使得所述底填充料的至少一部分插入于所述角衬垫与所述第一半导体管芯的所述一对相邻侧表面之间。在一些实施例中，形成所述密封体包括：在所述插入件上形成密封材料，从而覆盖所述多个半导体管芯和固化的所述第一材料；以及去除固化的所述第一材料的一部分以及所述密封材料的一部分。
前文概述若干实施例的特征使得本领域的技术人员可更好地理解本公开的各方面。本领域的技术人员应了解，其可轻易地将本公开用作设计或修改用于实现本文中所引入的实施例的相同目的和/或达成相同优势的其它工艺和结构的基础。本领域的技术人员还应认识到，这些等效构造并不脱离本公开的精神和范围，且其可以在不脱离本公开的精神和范围的情况下在本文中进行各种改变、替代以及更改。

Claims (10)

1.一种半导体封装件，包括：
插入件；
多个半导体管芯，每一半导体管芯包括：
有源表面；
背侧表面，与所述有源表面相对；以及
侧表面，使所述有源表面接合到所述背侧表面；以及
密封体，包含第一材料且横向地包覆所述多个半导体管芯，
其中所述多个半导体管芯电连接到所述插入件且并排安置在所述插入件上，其中相应背侧表面背对所述插入件，
所述多个半导体管芯中的至少一个半导体管芯包括外部角，圆角结构在所述至少一个半导体管芯的所述外部角处形成，
所述圆角结构包括不同于所述第一材料的第二材料；且
所述外部角由所述至少一个半导体管芯的所述背侧表面和所述至少一个半导体管芯的一对相邻侧表面形成，所述一对相邻侧表面中的所述侧表面具有一共同第一边缘，且所述一对相邻侧表面中的每一侧表面不面向其它半导体管芯并且具有与所述至少一个半导体管芯的所述背侧表面共同的一第二边缘。
2.根据权利要求1所述的半导体封装件，还包括形成所述圆角结构的角衬垫。
3.根据权利要求2所述的半导体封装件，还包括底填充料，所述底填充料安置为与所述至少一个半导体管芯的所述一对相邻侧表面以及所述角衬垫接触。
4.根据权利要求3所述的半导体封装件，其中所述底填充料至少部分地安置在所述角衬垫与所述至少一个半导体管芯的所述一对相邻侧表面之间。
5.根据权利要求2所述的半导体封装件，其中所述多个半导体管芯的所述背侧表面和所述角衬垫的顶部表面与所述密封体的顶部表面共面。
6.根据权利要求1所述的半导体封装件，其中所述至少一个半导体管芯包含半导体衬底，且所述半导体衬底的平滑角形成所述圆角结构。
7.根据权利要求6所述的半导体封装件，其中所述至少一个半导体管芯的所述背侧表面形成尖锐角以及一或多个平滑角。
8.一种半导体封装件，包括：
第一半导体衬底，具有穿过所述第一半导体衬底形成的半导体穿孔；
多个半导体管芯，并排安置在所述第一半导体衬底上且电连接到所述半导体穿孔；
底填充料，安置在所述第一半导体衬底与所述多个半导体管芯之间；
角衬垫，与所述多个半导体管芯中的一个半导体管芯实体接触，所述角衬垫安置在与所述一个半导体管芯的背侧表面的外部角对应的所述底填充料上且包括第一材料；以及
密封体，包括不同于所述第一材料的第二材料且安置在所述第一半导体衬底上，横向地包覆所述多个半导体管芯、所述角衬垫以及所述底填充料。
9.根据权利要求8所述的半导体封装件，其中所述底填充料包含第三材料，且所述第一材料、所述第二材料以及所述第三材料彼此不同。
10.一种半导体封装件的制造方法，包括：
通过安置在多个半导体管芯的有源表面处的连接件将所述多个半导体管芯电连接到插入件；
围绕所述连接件以及在相邻半导体管芯之间的间隙中在所述插入件上分配填充材料；
固化所述填充材料以形成底填充料；
在所述多个半导体管芯中的第一半导体管芯的背侧表面上形成包括第一材料的圆角结构，所述第一半导体管芯的所述背侧表面与所述第一半导体管芯的所述有源表面相对；以及
形成包括第二材料且横向地包覆所述多个半导体管芯和所述底填充料的密封体，
其中所述圆角结构与所述密封体接触；且
所述第一材料不同于所述第二材料。
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