CN113193104A - Fan-ring-shaped thermoelectric-arm-structure semiconductor cold and hot tube and preparation method thereof - Google Patents
Fan-ring-shaped thermoelectric-arm-structure semiconductor cold and hot tube and preparation method thereof Download PDFInfo
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- CN113193104A CN113193104A CN202110340046.8A CN202110340046A CN113193104A CN 113193104 A CN113193104 A CN 113193104A CN 202110340046 A CN202110340046 A CN 202110340046A CN 113193104 A CN113193104 A CN 113193104A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
Abstract
The invention provides a fan-shaped ring-shaped thermoelectric arm structure semiconductor cold and hot tube and a preparation method thereof, belonging to the technical field of semiconductor refrigeration. The problems of low efficiency, large size and the like of a heat dissipation system when the conventional semiconductor refrigerating sheet is used are solved. The technical scheme is as follows: a fan-shaped semiconductor cold and hot pipe with a thermoelectric arm structure comprises a P-N couple, a heat conducting metal sheet consisting of an upper side flow guiding metal sheet and a lower side flow guiding metal sheet; and a positive and negative electrode lead is respectively led out from the flow guide metal sheets. The invention has the beneficial effects that: the semiconductor cold and hot pipe with the fan-shaped ring-shaped thermoelectric arm structure has the advantages that the cold and hot ends are both in the pipeline structure, the forced convection liquid cooling mode can be directly adopted at the inner side or the outer side of the pipeline at the cold and hot ends, and the thermal contact resistance and the thermal conduction resistance in a heat dissipation system can be avoided.
Description
Technical Field
The invention relates to the technical field, in particular to a semiconductor cold and hot tube with a fan-shaped thermoelectric arm structure and a preparation method thereof.
Background
The semiconductor thermoelectric refrigerator has the characteristics of simple structure, no rotating part, capability of refrigerating and heating at the same time, high speed and the like, and is often used as a special cold source to be applied to medical equipment, military equipment and various laboratory test analysis instruments. With the progress of research, the thermoelectric performance, the energy conversion efficiency and the like of the semiconductor thermoelectric material are gradually improved, and the application of the semiconductor thermoelectric device in small household appliances is rapidly developed. The structure commonly applied at the present stage is a semiconductor refrigeration sheet structure, which is formed by combining an upper insulating heat conduction plate, a lower insulating heat conduction plate and a middle P-N couple pair in a sandwich biscuit manner, wherein adjacent couple pairs are connected in series through conductor electrodes. The semiconductor refrigerating sheet is mostly in a flat plate shape, and because the series-connected couple pairs are flatly paved on the flat plate, the effective refrigerating capacity per unit area is not high.
When the flat-plate type semiconductor refrigerating piece is used, an air-cooled radiating system or a water-cooled radiating system needs to be additionally arranged, and the radiating system is generally arranged at the cold end and the hot end of the semiconductor refrigerating piece through the attachment of heat-conducting silicone grease, so that contact thermal resistance and heat-conducting thermal resistance are inevitable in a radiating/cold-radiating path, and the heat transfer efficiency is greatly reduced.
The invention aims to solve the technical problem of the flat-plate type semiconductor refrigerating sheet.
Disclosure of Invention
The invention aims to provide a fan-shaped semiconductor cold and hot tube with a thermoelectric arm structure and a preparation method thereof, which solve the problems of low efficiency, large volume and the like of a heat dissipation system when the existing semiconductor refrigerating sheet is used.
The invention is realized by the following measures: a fan-shaped thermoelectric arm structure semiconductor cold and hot pipe comprises an inner layer of insulating heat conduction pipe, an outer layer of insulating heat conduction pipe, a P-N couple pair formed by P type semiconductor crystal grains and N type semiconductor crystal grains, and a heat conduction metal sheet formed by an upper side flow guide metal sheet and a lower side flow guide metal sheet;
the P-type semiconductor crystal grain and the N-type semiconductor crystal grain are in fan-ring shapes, the upper side flow guide metal sheet is connected to the outer layer insulation heat conduction pipe through the P-type semiconductor crystal grain and the N-type semiconductor crystal grain, and the upper surface of the upper side flow guide metal sheet is connected to the outer layer insulation heat conduction pipe;
the lower side flow guide metal sheet, the P-type semiconductor crystal grains and the N-type semiconductor crystal grains are connected to the inner layer insulation heat conduction pipe together, the lower surface of the lower side flow guide metal sheet is connected to the inner layer insulation heat conduction pipe, and positive and negative electrode leads are led out of the flow guide metal sheet at the starting position and the ending position respectively.
Furthermore, a plurality of groups of P-N couple pairs formed by P-type semiconductor crystal grains and N-type semiconductor crystal grains are arranged in an interlayer between the inner layer of insulating heat conduction pipe and the outer layer of insulating heat conduction pipe, and each group of P-N couple pairs are connected in series in the annular interlayer and are arranged in a spiral manner.
Furthermore, the P-type semiconductor crystal grain and the N-type semiconductor crystal grain are connected through a flow guide metal sheet, the P-type semiconductor crystal grain and the N-type semiconductor crystal grain are of a fan-ring cylinder structure, and the flow guide metal sheet is in an arc shape and is attached to the outer wall surface of the inner-layer insulation heat conduction pipe or the inner wall surface of the outer-layer insulation heat conduction pipe in shape.
Furthermore, positive and negative leads led out from the inlet end of the semiconductor cold and hot tube are used for reversing the cold and hot ends by changing the positive and negative levels of the power supply. When the inner layer insulating heat conduction pipe is a cold end, the outer layer insulating heat conduction pipe is a hot end; when the inner layer insulating heat conduction pipe is used as the hot end, the outer layer insulating heat conduction pipe is used as the cold end.
Furthermore, the inner layer insulating heat conduction pipe is internally used for heat dissipation or cold dissipation in a liquid cooling mode, and the outer layer insulating heat conduction pipe is externally used for cold dissipation or heat dissipation in a liquid cooling mode. Compared with the traditional refrigerating sheet, the heat conduction sheet reduces the contact thermal resistance and the heat conduction thermal resistance of the cold and hot ends, and can effectively improve the efficiency and the performance of the semiconductor couple pair.
Further, the P-type semiconductor crystal grain and the N-type semiconductor crystal grain are both fan-shaped, the side a of the fan-shaped is perpendicular to the tangent line of the outer circle C1 at point M and the tangent line of the inner circle C2 at point N, and the side b of the fan-shaped is perpendicular to the tangent line of the outer circle C1 at point P and the tangent line of the inner circle C2 at point Q.
In order to better achieve the above object, the present invention further provides a method for manufacturing a semiconductor cold/hot tube with a fan-shaped ring-shaped thermoelectric arm structure, which specifically comprises the following steps:
the method comprises the following steps:
s1, welding the lower side flow guide metal sheet on the inner layer insulation heat conduction pipe;
s2, welding the lower end face of each fan-shaped crystal grain on the corresponding position of the lower diversion metal sheet in an alternating surrounding manner, and then welding the corresponding upper diversion metal sheet on the upper end face of each fan-shaped crystal grain;
s3, coating soldering flux on the upper surface of the other side of the upper side current-guiding metal sheet, and bonding soldering lugs;
s4, sleeving the inner layer insulating heat conduction pipe, the flow guide metal sheet and the semiconductor crystal grain attached to the inner layer insulating heat conduction pipe into the outer layer insulating heat conduction pipe;
s5, expanding the inner-layer insulated heat conduction pipe through an internal pipe expanding method, and enabling the upper side flow guide metal sheet to tightly press the inner wall of the outer-layer insulated heat conduction pipe to finish the assembly of the refrigeration pipe;
and S6, heating the soldering lug to obtain the semiconductor refrigeration pipe.
Furthermore, the inner layer of insulating heat conduction pipe and the outer layer of insulating heat conduction pipe are aluminum pipes with oxide films on the surfaces.
In actual use, the invention comprises the following steps: the semiconductor refrigerating plate is formed by connecting a plurality of N-type semiconductor crystal grains and P-type semiconductor crystal grains into a P-N couple, when current passes through the heat exchanger, heat transfer is generated between the two ends, the heat moves from the cold end to the hot end, thereby generating temperature difference, in order to reach lower cold end temperature, the method can be realized by adopting a mode of enhancing heat dissipation of the hot end, and also, in order to achieve higher hot end temperature, the cold end heat dissipation can be enhanced, and the semiconductor cold and hot tube of the invention, because the cold end and the hot end are both in pipeline structures, a forced convection liquid cooling mode can be directly adopted at the inner side or the outer side of the pipeline at the cold end and the hot end, can avoid the thermal contact resistance and the thermal conduction resistance in a heat dissipation system, can greatly improve the heat transfer efficiency at the cold end and the hot end, therefore, the high-efficiency refrigeration is realized, the refrigeration can be used as a cold source and a heat source at the same time, and the purposes of cooling and heating can be achieved at the same time through liquid media on the inner side and the outer side of the pipeline.
Compared with the prior art, the invention has the beneficial effects that: the semiconductor cold and hot pipe with the fan-shaped ring-shaped thermoelectric arm structure has the advantages that because the cold and hot ends are both in the pipe structures, a forced convection liquid cooling mode can be directly adopted at the inner side or the outer side of the cold and hot end pipe, the contact thermal resistance and the heat conduction thermal resistance in a heat dissipation system can be avoided, the heat transfer efficiency of the cold and hot ends can be greatly improved, the efficient refrigeration is realized, the semiconductor cold and hot pipe can be used as a cold and hot source at the same time, and the purposes of cooling and heating can be simultaneously achieved through liquid media at the inner side and the outer side of the pipe.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention.
Fig. 1 is a schematic overall structure diagram of an embodiment of the present invention.
Fig. 2 is a schematic cross-sectional view of the semiconductor cooling and heating tube in fig. 1.
Fig. 3 is a schematic diagram of the spiral arrangement of the galvanic couples in fig. 1.
Fig. 4 is a schematic structural diagram of a single P-N couple pair of the semiconductor cold and hot tube according to the embodiment of the present invention.
Fig. 5 is a schematic view of a processing process of a fan-ring-shaped thermoelectric arm according to an embodiment of the present invention.
Wherein the reference numerals are: 1. an inner layer insulation heat conduction pipe; 2. an outer layer insulation heat conduction pipe; 3. is a P-N couple; 4 is a P-type semiconductor crystal grain; 5. is an N-type semiconductor crystal grain; 6. an upper side flow guide metal sheet; 7. a lower flow guide metal sheet; 8. and positive and negative electrode leads.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. Of course, the specific embodiments described herein are merely illustrative of the invention and are not intended to be limiting.
Example 1
Referring to fig. 1 to 5, the present invention provides a technical solution that a fan-ring-shaped thermoelectric arm structure semiconductor cold-hot pipe comprises an inner layer insulating heat conduction pipe 1, an outer layer insulating heat conduction pipe 2, a P-N couple pair 3 composed of a P-type semiconductor crystal grain 4 and an N-type semiconductor crystal grain 5, and a heat conduction metal sheet composed of an upper side diversion metal sheet 6 and a lower side diversion metal sheet 7;
the P-type semiconductor crystal grain 4 and the N-type semiconductor crystal grain 5 are in a fan-shaped ring shape, the upper side flow guide metal sheet 6 is welded on the outer layer insulating heat-conducting pipe 2 through the P-type semiconductor crystal grain 4 and the N-type semiconductor crystal grain 5 together, and the upper surface of the upper side flow guide metal sheet 6 is welded on the outer layer insulating heat-conducting pipe 2;
the lower side flow guide metal sheet 7, the P-type semiconductor crystal grain 4 and the N-type semiconductor crystal grain 5 are welded on the inner layer insulation heat conduction pipe 1 together, the lower surface of the lower side flow guide metal sheet 7 is welded on the inner layer insulation heat conduction pipe 1, and a positive and negative electrode lead wire 8 is led out from the flow guide metal sheets at the starting position and the ending position respectively.
Preferably, a plurality of groups of P-N couple pairs 3 consisting of P-type semiconductor crystal grains 4 and N-type semiconductor crystal grains 5 are arranged in the interlayer between the inner layer insulating heat-conducting pipe 1 and the outer layer insulating heat-conducting pipe 2, and each group of P-N couple pairs 3 is connected in series in the annular interlayer and is arranged in a spiral manner.
Preferably, the P-type semiconductor crystal grain 4 and the N-type semiconductor crystal grain 5 are connected by a flow guiding metal sheet, the P-type semiconductor crystal grain 4 and the N-type semiconductor crystal grain 5 are in a fan-ring cylinder structure, and the flow guiding metal sheet is in an arc shape and is attached to the outer wall surface of the inner-layer insulated heat conduction pipe 1 or the inner wall surface of the outer-layer insulated heat conduction pipe 2.
The traditional thermoelectric arm is in a cuboid block-shaped crystal grain shape, and the forming process comprises the steps of firstly preparing a block-shaped cast ingot and then obtaining a single thermoelectric arm through scribing, mechanical cutting or laser etching and the like. The semiconductor crystal grain of the invention is a fan-ring cylinder, and the specific processing method comprises the following steps:
(1) putting the weighed raw materials into a quartz tube according to the stoichiometric ratio, vacuumizing and sealing the quartz tube;
(2) putting the sealed quartz tube into a rocking furnace for smelting, and cooling to room temperature after the smelting is finished to obtain an ingot;
(3) crushing and grinding the cast ingot to obtain powder, and then putting the powder in an annular graphite grinding tool for hot-pressing sintering to obtain an annular block material;
(4) slicing and polishing the annular bulk material: the annular sheet was cut perpendicularly, specifically in the radial direction of great circle C1, as shown in fig. 5, to obtain a single-particle thermoelectric leg.
Wherein, the circumferential direction angle theta of the P-type semiconductor crystal grain 4 and the N-type semiconductor crystal grain 5 can be unequal, namely the P-N couple 3 can be formed by the P-type semiconductor crystal grain 4 and the N-type semiconductor crystal grain 5 with different sizes, when the electrical conductivity and the thermal conductivity of the P-type semiconductor crystal grain 4 and the N-type semiconductor crystal grain 5 are unequal and the thermoelectric property is asymmetric, the optimal circumferential angle ratio theta which enables the energy conversion efficiency to be maximum existsN/θP。
Preferably, the positive and negative leads 8 led out from the inlet end of the semiconductor cold and hot tube are used for reversing the cold and hot ends by changing the positive and negative levels of the power supply; when the inner layer insulating heat conduction pipe 1 is a cold end, the outer layer insulating heat conduction pipe 2 is a hot end; when the inner insulating heat pipe 21 is at the hot end, the outer insulating heat pipe 2 is at the cold end.
Preferably, the inner layer of the insulating heat conducting pipe 1 is used for heat dissipation or cold dissipation in a liquid cooling manner, and the outer layer of the insulating heat conducting pipe 2 is used for heat dissipation or heat dissipation in a liquid cooling manner. Compared with the traditional refrigerating sheet, the heat conduction sheet reduces the contact thermal resistance and the heat conduction thermal resistance of the cold and hot ends, and can effectively improve the efficiency and the performance of the semiconductor couple pair.
Preferably, the P-type semiconductor die 4 and the N-type semiconductor die 5 are each fan-shaped, and a side a of the fan-shaped is perpendicular to a tangent line of the outer circle C1 at point M and a tangent line of the inner circle C2 at point N, and a side b of the fan-shaped is perpendicular to a tangent line of the outer circle C1 at point P and a tangent line of the inner circle C2 at point Q.
In order to better achieve the above object, the present invention further provides a method for manufacturing a semiconductor cold/hot tube with a fan-shaped ring-shaped thermoelectric arm structure, which specifically comprises the following steps:
s1, welding the lower diversion metal sheet 7 on the inner layer insulation heat conduction pipe 1;
s2, welding the lower end face of each fan-shaped crystal grain on the corresponding position of the lower diversion metal sheet 7 in an alternating surrounding manner, and then welding the corresponding upper diversion metal sheet 6 on the upper end face of each fan-shaped crystal grain;
s3, coating the flux on the upper surface of the other side of the upper side current-guiding metal sheet 6, and bonding the soldering lug;
s4, sleeving the inner layer insulation heat conduction pipe 1, the diversion metal sheet and the semiconductor crystal grain attached to the inner layer insulation heat conduction pipe 1 into the outer layer insulation heat conduction pipe 2;
s5, expanding the inner layer insulating heat conduction pipe 1 by an internal pipe expanding method, and pressing the inner wall of the outer layer insulating heat conduction pipe 2 by the upper side flow guide metal sheet 6 to finish the assembly of the refrigeration pipe;
and S6, heating the soldering lug to obtain the semiconductor refrigeration pipe.
Preferably, the inner layer insulated heat conductive pipe 1 and the outer layer insulated heat conductive pipe 2 are aluminum pipes with oxide films on the surfaces.
In actual use, the invention comprises the following steps: the semiconductor refrigerating plate is formed by connecting a plurality of N-type semiconductor crystal grains 5 and P-type semiconductor crystal grains 4 into a P-N couple 3, when current passes through the heat exchanger, heat transfer is generated between the two ends, the heat moves from the cold end to the hot end, thereby generating temperature difference, in order to reach lower cold end temperature, the method can be realized by adopting a mode of enhancing heat dissipation of the hot end, and also, in order to achieve higher hot end temperature, the cold end heat dissipation can be enhanced, and the semiconductor cold and hot tube of the invention, because the cold end and the hot end are both in pipeline structures, a forced convection liquid cooling mode can be directly adopted at the inner side or the outer side of the pipeline at the cold end and the hot end, can avoid the thermal contact resistance and the thermal conduction resistance in a heat dissipation system, can greatly improve the heat transfer efficiency at the cold end and the hot end, therefore, the high-efficiency refrigeration is realized, the refrigeration can be used as a cold source and a heat source at the same time, and the purposes of cooling and heating can be achieved at the same time through liquid media on the inner side and the outer side of the pipeline.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (9)
1. A fan-shaped thermoelectric arm structure semiconductor cold and hot pipe is characterized by comprising an inner layer of insulating heat conduction pipe (1), an outer layer of insulating heat conduction pipe (2), a P-N couple pair (3) formed by a P-type semiconductor crystal grain (4) and an N-type semiconductor crystal grain (5), and a heat conduction metal sheet formed by an upper side flow guide metal sheet (6) and a lower side flow guide metal sheet (7);
the P-type semiconductor crystal grain (4) and the N-type semiconductor crystal grain (5) are both in a fan-ring shape, the upper side flow guide metal sheet (6) is connected to the outer layer insulating heat conduction pipe (2) through the P-type semiconductor crystal grain (4) and the N-type semiconductor crystal grain (5), and the upper surface of the upper side flow guide metal sheet (6) is connected to the outer layer insulating heat conduction pipe (2);
the lower side flow guide metal sheet (7) is connected to the inner layer insulation heat conduction pipe (1) together with the P type semiconductor crystal grain (4) and the N type semiconductor crystal grain (5), the lower surface of the lower side flow guide metal sheet (7) is connected to the inner layer insulation heat conduction pipe (1), and positive and negative electrode leads (8) are led out of the flow guide metal sheets at the starting position and the ending position respectively.
2. The fan-shaped ring-shaped thermoelectric arm structure semiconductor cooling and heating pipe according to claim 1, wherein a plurality of P-N couple pairs (3) composed of P-type semiconductor crystal grains (4) and N-type semiconductor crystal grains (5) are arranged in the interlayer between the inner layer insulating heat pipe (1) and the outer layer insulating heat pipe (2), and each P-N couple pair (3) is connected in series in the ring-shaped interlayer and is arranged in a spiral manner.
3. The fan-shaped thermoelectric arm structure semiconductor cold and hot pipe according to claim 1 or 2, wherein the P-type semiconductor crystal grain (4) and the N-type semiconductor crystal grain (5) are connected by a flow guiding metal sheet, the P-type semiconductor crystal grain (4) and the N-type semiconductor crystal grain (5) are in a fan-shaped ring cylinder structure, and the flow guiding metal sheet is in a circular arc shape and is attached to the outer wall surface of the inner layer insulating heat conducting pipe (1) or the inner wall surface of the outer layer insulating heat conducting pipe (2).
4. The fan-ring shaped thermoelectric arm structure semiconductor cold-hot pipe as claimed in any one of claims 1 to 3, wherein the positive and negative leads (8) led out from the inlet end of the semiconductor cold-hot pipe are used for reversing the cold-hot end by changing the positive and negative levels of the power supply.
5. The cooling and heating pipe with fan-shaped ring-shaped thermoelectric arm structure semiconductor of any one of claims 1 to 4, wherein the inner layer of insulating heat conducting pipe (1) is used for heat dissipation or cold dissipation in a liquid cooling manner, and the outer layer of insulating heat conducting pipe (2) is used for cold dissipation or heat dissipation in a liquid cooling manner.
6. The fan-shaped thermoelectric arm structure semiconductor cooling-heating tube according to any one of claims 1-5, wherein the P-shaped semiconductor die (4) and the N-shaped semiconductor die (5) are both fan-shaped, the side a of the fan-shaped is perpendicular to the tangent of the outer circle C1 at point M and the tangent of the inner circle C2 at point N, and the side b of the fan-shaped is perpendicular to the tangent of the outer circle C1 at point P and the tangent of the inner circle C2 at point Q.
7. A method for manufacturing the fan-shaped thermoelectric arm structure semiconductor cooling and heating tube according to any one of claims 1 to 6, comprising the following steps:
s1, welding the lower diversion metal sheet (7) on the inner layer insulation heat conduction pipe (1);
s2, alternately welding the lower end face of each fan-shaped crystal grain on the corresponding position of the lower side flow guide metal sheet (7) in a surrounding way, and then welding the corresponding upper side flow guide metal sheet (6) on the upper end face of each fan-shaped crystal grain;
s3, coating soldering flux on the surface of the other side of the upper side current-guiding metal sheet (6), and bonding soldering lugs;
s4, sleeving the inner layer insulating heat conduction pipe (1) together with the flow guide metal sheet and the semiconductor crystal grain attached to the inner layer insulating heat conduction pipe into the outer layer insulating heat conduction pipe (2);
s5, expanding the inner layer insulating heat conduction pipe (1) through an internal pipe expanding method, and enabling the upper side flow guide metal sheet (6) to tightly press the inner wall of the outer layer insulating heat conduction pipe (2) to finish the assembly of the refrigeration pipe;
and S6, heating the soldering lug to obtain the semiconductor refrigeration pipe.
8. The production method according to claim 7, wherein the inner layer insulated heat conductive pipe (1) and the outer layer insulated heat conductive pipe (2) are aluminum pipes with oxide films on surfaces.
9. The preparation method of claim 8, wherein the material of the base ingot is one or more of a bismuth telluride-based thermoelectric material, a lead telluride-based thermoelectric material, a germanium-silicon-based thermoelectric material and a copper-based compound thermoelectric material.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110340046.8A CN113193104A (en) | 2021-03-30 | 2021-03-30 | Fan-ring-shaped thermoelectric-arm-structure semiconductor cold and hot tube and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110340046.8A CN113193104A (en) | 2021-03-30 | 2021-03-30 | Fan-ring-shaped thermoelectric-arm-structure semiconductor cold and hot tube and preparation method thereof |
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| CN113193104A true CN113193104A (en) | 2021-07-30 |
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| CN202110340046.8A Pending CN113193104A (en) | 2021-03-30 | 2021-03-30 | Fan-ring-shaped thermoelectric-arm-structure semiconductor cold and hot tube and preparation method thereof |
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- 2021-03-30 CN CN202110340046.8A patent/CN113193104A/en active Pending
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