CN113193002A - Perovskite/silicon laminated solar cell and preparation method thereof - Google Patents

Perovskite/silicon laminated solar cell and preparation method thereof Download PDF

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CN113193002A
CN113193002A CN202110378799.8A CN202110378799A CN113193002A CN 113193002 A CN113193002 A CN 113193002A CN 202110378799 A CN202110378799 A CN 202110378799A CN 113193002 A CN113193002 A CN 113193002A
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perovskite
silicon
solar cell
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刘明侦
崔翔
胡逾超
李发明
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University of Electronic Science and Technology of China
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    • H—ELECTRICITY
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    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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    • H10K19/20—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising components having an active region that includes an inorganic semiconductor
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    • Y02E10/549—Organic PV cells

Abstract

The invention belongs to the technical field of solar cells, and provides a perovskite/silicon tandem solar cell and a preparation method thereof, which are used for solving the problems that the interface passivation of perovskite materials in the prior art cannot realize the synchronous passivation of various defects, the inhibition efficiency of carrier interface recombination is not high, and the like. According to the invention, an organic ionic type modifier passivation layer is introduced between the perovskite light absorption layer and the hole transmission layer of the perovskite/silicon tandem cell, so that synchronous high-efficiency passivation of various defects on the interface is realized, and the defect state density is obviously reduced; meanwhile, lattice mismatch at the interface is effectively prevented, and the defect passivation effect is further optimized. In conclusion, the perovskite/silicon tandem solar cell has lower defect state density, higher short-circuit current density and higher open-circuit voltage, and the overall performance of the perovskite/silicon tandem solar cell is obviously improved; and the synthesis process of the passivation layer of the organic ionic modifier is mature, the price is low, and the organic ionic modifier has the advantages of high efficiency, stability and low cost.

Description

Perovskite/silicon laminated solar cell and preparation method thereof
Technical Field
The invention belongs to the technical field of solar cells, and particularly provides a perovskite/silicon tandem solar cell and a preparation method thereof.
Background
The 21 st century faces severe energy shortage, environmental pollution and other problems, and the development and utilization of clean renewable energy is an urgent task in China; solar energy is one of new energy sources which attracts attention due to its characteristics of environmental protection, low price, abundant reserves and the like, and is considered to be one of the most promising choices for replacing the traditional fossil fuel. As an important way to effectively utilize Solar energy, the development of Solar Cells is attracting more and more attention, and among many photovoltaic devices, Perovskite Solar Cells (PSCs) are rapidly developed in recent years.
Perovskite (CH)3NH3PbI3) The solar cell belongs to the third generation solar cell, and is characterized in that perovskite type organic-inorganic hybrid halide semiconductor material is used as a light absorption layer; the organic-inorganic hybrid halide perovskite material has the remarkable characteristic that a band gap adjustable from 1.17eV to 3.1eV can be obtained by changing the components of the organic-inorganic hybrid halide perovskite material; therefore, perovskite materials are well suited for constructing tandem solar cells where the photoelectric conversion efficiency can exceed the Shockley-Queisser limit. The silicon solar cell has a wider absorption spectrum, but has less absorption to short-wave-band high-energy spectrum, the perovskite solar cell has a narrower spectral range, and the light absorption range can further move towards the short wave direction by controlling the proportion of halogen elements in the perovskite material, so that the perovskite/silicon tandem solar cell can better realize the full utilization of sunlight, improve the utilization rate of light-excited thermal electrons, and improve the photoelectric conversion efficiency of the solar cell.
When the perovskite battery and the silicon battery are combined to prepare the laminated battery, two modes are generally adopted, one mode is a parallel type four-end laminated battery, and the other mode is a series type two-end laminated battery; the two-end laminated cell is simple in test and more suitable for industrialization due to the structural integration, but a plurality of interfaces have great influence on the photoelectric performance of the device. A large number of researches show that a large number of defect sites existing in the interface are the main problem of limiting the performance improvement of the two-end laminated solar cell, localized electronic energy levels can be formed by the defect sites at the interface, and due to the fact that the energy level positions of the defect states are different from the carrier transmission energy band, photo-generated free carriers can be captured and limited, non-radiative recombination is promoted, the photoelectric performance of the device is seriously reduced, and the defect problem of the perovskite material interface is obvious. Therefore, reducing the defect state of the interface, especially the perovskite interface, and inhibiting the recombination of the photon-generated carriers at the interface defect are the key points for further improving the performance of the tandem cell.
At present, interface modification is one of important methods for passivating defects and inhibiting charge recombination at an interface, and can improve the open-circuit voltage, the fill factor and the long-term stability of a device. There are many materials available for interface passivation, such as polymethyl methacrylate (PMMA), monolayer ethanolamine (DEA), aminovaleric acid (5-AVA), and other organic molecules, but the number of functional groups of the interface molecules and the structure of the molecules themselves are limited, the molecular passivation can only realize passivation of a single type of defect on the surface, and cannot realize synchronous passivation of multiple types of defects, and the inhibition efficiency of carrier interface recombination is not high, which all become the bottleneck of development of the tandem solar cell at present.
Disclosure of Invention
The invention aims to provide a novel perovskite/silicon tandem solar cell and a preparation method thereof, aiming at the problems that the interface passivation of perovskite materials in the existing perovskite/silicon tandem solar cell can not realize the synchronous passivation of various defects, the inhibition efficiency of the recombination of a current carrier interface is not high and the like; in the novel perovskite/silicon tandem solar cell, an organic ionic type modifier passivation layer is arranged at the interface of the perovskite light absorption layer and the hole transmission layer, so that the synchronous high-efficiency passivation of various types of defects on the interface of the perovskite light absorption layer is realized, and the photoelectric property of the perovskite/silicon tandem solar cell is effectively improved.
In order to achieve the purpose, the invention adopts the technical scheme that:
a perovskite/silicon tandem solar cell comprising: the solar cell comprises a silicon-based sub-cell, a second Indium Tin Oxide (ITO) transparent electrode layer 8, a hole transport layer 9, a perovskite light absorption layer 11, an electron transport layer 12, a hole blocking layer 13 and a metal electrode 14, wherein the silicon-based sub-cell, the second ITO transparent electrode layer, the hole transport layer 9, the perovskite light absorption layer 11, the electron transport layer 12, the hole blocking layer 13 and the metal electrode 14 are sequentially stacked from bottom to top.
Further, the thickness of the passivation layer of the organic ionic modifier is 1-2 nanometers.
Further, the organic ionic modifier is specifically one of pyridine p-toluenesulfonate, pyridine methanesulfonate and pyridine propanesulfonic acid inner salt.
Further, the silicon-based sub-cell is a silicon-based solar cell with a polished upper surface, and specifically includes: the back conductive grid line 1, the first ITO transparent conductive layer 2, the n-type amorphous silicon layer 3, the first i-type amorphous silicon layer 4, the crystalline silicon layer 5, the second i-type amorphous silicon layer 6 and the p-type amorphous silicon layer 7 are sequentially stacked from bottom to top.
Further, the hole transport layer is a nickel oxide nanocrystalline thin film, and the perovskite light absorption layer is MAPbI3The electron transport layer is a fullerene derivative (PCBM) film, and the hole blocking layer is a Bathocuproine (BCP) film.
The preparation method of the perovskite/silicon tandem solar cell comprises the following steps:
step 1, preparing a substrate: sputtering and preparing an ITO transparent conducting layer on the upper layer of the silicon-based solar sub-cell by taking the silicon-based solar sub-cell as a substrate, and cutting the ITO transparent conducting layer into a preset size;
step 2, preparing a hole transport layer: preparing a nickel oxide nanocrystalline thin film layer on the ITO transparent electrode layer;
step 3, preparing an organic ionic modifier passivation layer: preparing an organic ionic type modifier thin layer on the nickel oxide nanocrystalline thin film;
step 4, preparing a calcium iron ore light absorption layer: preparing a perovskite light absorption layer on the organic ionic modifier thin layer and annealing;
step 5, preparing an electron transport layer: preparing a fullerene derivative (PCBM) layer on the perovskite light absorption layer and annealing;
step 6, preparing a hole blocking layer: preparing a Bathocuproine (BCP) layer on the fullerene derivative (PCBM) layer and annealing;
step 7, preparing an electrode: and preparing a metal silver electrode on the Bathocuproine (BCP) layer.
Further, in the step 2, the nickel oxide nanocrystalline thin film is prepared by a solution method, and firstly, nickel oxide nanocrystalline powder is dispersed in a solvent to prepare the nickel oxide nanocrystalline thin film with the concentration of 10-20 mgml-1The solvent is a mixed solvent of water and isopropanol, and the volume ratio of the mixed solvent to the isopropanol is 4: 1; then, spin-coating the nickel oxide nanocrystal solution on the ITO transparent electrode layer, wherein the spin-coating parameters are as follows: the rotating speed is 2500-3500 rpm, and the time is 30 seconds; and finally, drying the substrate in a drying oven for 8-10 hours to prepare a layer of nickel oxide nanocrystalline film with the thickness of 10-30 nanometers.
Further, in the step 3, a solution method is adopted to prepare a thin tosylate (PPTS) layer, and first, PPTS powder is dissolved in N, N-Dimethylformamide (DMF), and stirred at room temperature for 1-3 hours to prepare a solution with a concentration of 5mgml-1And filtering the solution through a PTFE filter head; then, spin-coating the solution on the nickel oxide nanocrystalline thin film, wherein the spin-coating parameters are as follows: the rotating speed is 2500-3500 rpm, the time is 30 seconds, and a thin film with uniform spin coating is obtained; and finally, placing the substrate on a hot table at 75 ℃, and annealing at a low temperature for 15-20 minutes to obtain the organic ionic modifier passivation layer with the thickness of 1-2 nanometers.
Further, in the step 4, a one-step solution spin coating method is adopted to prepare MAPbI3Film, first, taking PbI2And CH3NH3I is dissolved in a solvent according to the molar ratio of 1:1 to prepare a perovskite precursor solution, wherein the solvent is a mixed solution of dimethyl sulfoxide (DMSO) and DMF, and the volume ratio of the DMSO to the DMF is 1: 4; then, perovskite is takenThe precursor solution is spin-coated on the dipole molecule modification layer, and the spin-coating parameters are as follows: the rotating speed is 2500-3500 rpm, the time is 30 seconds, and 0.1-0.3 ml of anti-solvent (chlorobenzene or diethyl ether) is dripped in the 10 th s; and finally, placing the substrate on a hot table at 100 ℃, and carrying out annealing treatment for 25-30 minutes to obtain the perovskite light absorption layer with the thickness of 400-500 nanometers.
The invention has the beneficial effects that:
the invention provides a perovskite/silicon tandem solar cell, which realizes synchronous passivation of various types of defects on an interface by introducing an organic ionic type modifier passivation layer between a perovskite light absorption layer and a hole transmission layer of the perovskite/silicon tandem solar cell. In the invention, the organic ionic modifier is pyridine sulfonic acid organic salt, and as shown in figure 3, sulfonate anions and pyridine cations contained in the organic ionic modifier can be respectively combined with positive charges and negative charges in a hole transport layer and a perovskite light absorption layer through coulomb interaction force, so that synchronous and efficient passivation of multiple types of defects on an interface is realized, and the defect state density is obviously reduced; meanwhile, the introduction of the organic ionic modifier can effectively prevent lattice mismatch at the interface and further optimize the defect passivation effect.
Therefore, the perovskite/silicon tandem solar cell provided by the invention has lower defect state density, higher short-circuit current density and higher open-circuit voltage, and the overall performance of the perovskite/silicon tandem solar cell is obviously improved; in addition, the organic ionic modifier passivation layer in the perovskite/silicon tandem solar cell has mature synthesis process and low price, so the perovskite/silicon tandem solar cell has the advantages of high efficiency, stability and low cost.
Drawings
Fig. 1 is a schematic structural diagram of a perovskite/silicon tandem solar cell passivated based on an organic ionic modifier according to an embodiment of the invention.
FIG. 2 shows an embodiment of the present invention in which an organic ionic modifier is used: pyridine p-toluenesulfonate salt.
FIG. 3 is a schematic diagram of the mechanism of action when pyridine p-toluenesulfonate is used to passivate an interface in an embodiment of the present invention.
Figure 4 is a current density-voltage curve for an untreated perovskite/silicon tandem solar cell in an example of the invention.
Fig. 5 is a current density-voltage curve of a perovskite/silicon tandem solar cell passivated based on an organic ionic modifier in an embodiment of the invention.
FIG. 6 is an X-ray diffraction pattern of a perovskite layer passivated based on an organic ionic modifier and a perovskite layer without a modification layer according to the present invention.
Detailed Description
The preferred embodiments of the present invention will be described below with reference to the accompanying drawings for clarity and understanding of technical contents. The present invention may be embodied in many different forms of embodiments and the scope of the invention is not limited to the embodiments set forth herein.
The embodiment provides a perovskite/silicon tandem solar cell passivated based on an organic ionic modifier, the structure of which is shown in fig. 1, and the perovskite/silicon tandem solar cell comprises: the silicon substrate cell comprises a back conductive grid line 1, a first ITO transparent conductive layer 2, an n-type amorphous silicon layer 3, an i-type amorphous silicon layer 4, a crystalline silicon layer 5, an i-type amorphous silicon layer 6, a p-type amorphous silicon layer 7, a second ITO transparent conductive layer 8, a hole transport layer 9, an organic ionic modifier passivation layer 10, a perovskite light absorption layer 11, an electron transport layer 12, a hole blocking layer 13 and a metal electrode 14 which are sequentially stacked from bottom to top, wherein the back conductive grid line 1, the first ITO transparent conductive layer 2, the n-type amorphous silicon layer 3, the i-type amorphous silicon layer 4, the crystalline silicon layer 5, the i-type amorphous silicon layer 6 and the p-type amorphous silicon layer 7 form a silicon substrate cell together; in this embodiment, the organic ionic modifier is a pyridine sulfonic acid organic salt, including pyridine p-toluenesulfonate, pyridine methanesulfonate, and pyridine propanesulfonic acid inner salt, taking pyridine p-toluenesulfonate (PPTS) as an example, and its molecular structure is shown in fig. 2.
Further, the preparation method of the perovskite/silicon tandem solar cell passivated based on the organic ionic modifier by taking the silicon-based solar sub-cell as a substrate comprises the following steps:
step 1, preparing a substrate:
firstly, sputtering an ITO transparent conducting layer with the thickness of 50-200 nanometers on a silicon-based sub-battery by using magnetron sputtering, and cutting the substrate into the size of 20mm multiplied by 20mm by using a laser cutting machine; then, carrying out surface treatment on the ITO conductive glass substrate by using a Plasma cleaning machine for 10 minutes;
step 2, preparing a hole transport layer:
the nickel oxide nano-crystal film is prepared by a solution method, firstly, nickel oxide nano-crystal powder is dispersed in a solvent to prepare the nickel oxide nano-crystal film with the concentration of 20mgml-1The solvent is a mixed solvent of water and isopropanol, and the volume ratio of the mixed solvent to the isopropanol is 4: 1; then, spin-coating the nickel oxide nanocrystal solution on the ITO transparent electrode layer, wherein the spin-coating parameters are as follows: the rotating speed is 3000rpm, and the time is 30 seconds; finally, the substrate is placed in a drying oven to be dried for 8 hours, and a layer of nickel oxide nanocrystalline film with the thickness of about 20 nanometers is prepared;
step 3, preparing an organic ionic modifier passivation layer:
a thin layer of tosylate (PPTS) was prepared by a solution method by first dissolving PPTS powder in N, N-Dimethylformamide (DMF) and stirring at room temperature for 1 hour to prepare a solution having a concentration of 5mgml-1Filtering the solution by a 0.45 micron PTFE filter head to remove impurities in the solution; then, spin-coating the solution on the nickel oxide nanocrystalline thin film, wherein the spin-coating parameters are as follows: the rotating speed is 3000rpm, the time is 30 seconds, and a thin film with uniform spin coating is obtained; finally, placing the substrate on a hot table at 75 ℃, and annealing at low temperature for 15 minutes to prepare an organic ionic modifier passivation layer with the thickness of 1-2 nanometers;
the prepared organic ionic modifier passivation layer can improve the lattice mismatch phenomenon between nickel oxide and perovskite, promote the crystallinity of the perovskite layer to be improved, obtain larger grain size, obviously reduce the interface defect of the perovskite and improve the overall performance of the perovskite/silicon tandem solar cell;
step 4, preparing a calcium iron ore light absorption layer:
MAPbI was prepared by one-step solution spin-coating3Film, first, taking PbI2And CH3NH3I in a molar ratio of 1:1Dissolving in a solvent according to a molar ratio to prepare a perovskite precursor solution, wherein the solvent is a mixed solution of dimethyl sulfoxide (DMSO) and DMF, and the volume ratio of the DMSO to the DMF is 1: 4; then, taking the perovskite precursor solution to spin-coat on the dipole molecule modification layer, wherein the spin-coating parameters are as follows: rotating at 3000rpm for 30 s, and adding dropwise 0.3ml of antisolvent (chlorobenzene or diethyl ether) at 10 s; finally, placing the substrate on a hot table at 100 ℃, and carrying out annealing treatment for 30 minutes to prepare a perovskite light absorption layer with the thickness of 450 nanometers;
step 5, preparing an electron transport layer:
preparing PCBM film by solution method, firstly, dispersing PCBM powder in solvent to obtain PCBM powder with concentration of 20mgml-1The solvent is chlorobenzene; then, spin-coating the PCBM solution on the perovskite layer with the spin-coating parameters: the rotating speed is 3000rpm, and the time is 30 seconds; finally, the substrate is placed on a hot table at 100 ℃, and annealing treatment is carried out for 10 minutes, so that the PCBM electron transport layer with the thickness of 100 nanometers is prepared;
step 6, preparing a hole blocking layer:
preparing BCP film by solution method, firstly, dispersing BCP powder in solvent to make the concentration be 0.5mgml-1The solvent is ethanol or isopropanol; then, spin-coating the BCP solution on the PCBM layer with the spin-coating parameters: the rotating speed is 4000rpm, and the time is 30 seconds; finally, placing the substrate on a hot table at 75 ℃, and carrying out annealing treatment for 15 minutes to obtain a BCP hole blocking layer with the thickness of 3-5 nanometers;
step 7, preparing an electrode:
and preparing a silver electrode by adopting a high-vacuum thermal evaporation process, and uniformly evaporating the silver electrode on the hole blocking layer 7 at a speed of 2 angstroms/second under the condition of substrate rotation to prepare the interface dipolar molecule modified perovskite solar cell.
In the present example, the existing perovskite/silicon tandem solar cell without a passivation layer was used as a comparative example for comparison; the perovskite thin film passivated based on the organic ionic modifier has lower defect state density, the action mechanism is shown in figure 3, when the organic ionic modifier passivates an interface, anions and cations contained in the perovskite thin film can be respectively combined with positive charges and negative charges in a hole transport layer and a perovskite layer through coulomb interaction force, and synchronous and efficient passivation of various defects on the interface is realized; based on this, this embodiment has realized better photoelectric properties, has promoted the overall performance of perovskite/silicon tandem solar cell.
As shown in fig. 4 and 5, which are current density-voltage curves (J-V curves) of the perovskite/silicon tandem solar cell of the comparative example and the present example, respectively, it can be seen that, in the J-V curves, the perovskite/silicon tandem solar cell passivated based on the organic ionic modifier in the present example is superior to the perovskite/silicon tandem solar cell without the modifier in both open-circuit voltage and short-circuit current density.
As shown in fig. 6, when comparing the X-ray diffraction patterns of the perovskite thin film in the perovskite/silicon tandem solar cell of the present embodiment with the X-ray diffraction patterns of the perovskite thin film in the perovskite/silicon tandem solar cell of the present embodiment, it can be seen that the crystallinity of the perovskite thin film passivated based on the organic ionic modifier in the present embodiment is better than that of the perovskite thin film without the modifier, i.e. the perovskite sub cell of the present embodiment is proved to have more excellent performance.
In conclusion, the organic ionic type modifier passivation layer is introduced between the perovskite light absorption layer and the hole transmission layer of the perovskite/silicon tandem solar cell, so that the synchronous passivation of the interface multi-type defects is realized; the organic ionic modifier is pyridine sulfonic acid organic salt, and sulfonate anions and pyridine cations contained in the organic ionic modifier can respectively passivate positive charge and negative charge defects in nickel oxide and perovskite layers, so that the defect density is remarkably reduced; meanwhile, the introduction of the organic ionic modifier can effectively prevent lattice mismatch at the interface, improve the crystallinity of the perovskite thin film and further optimize the defect passivation effect. Therefore, the perovskite/silicon tandem solar cell provided by the invention realizes higher open-circuit voltage and short-circuit current density, has higher photoelectric conversion efficiency, and improves the overall performance of the perovskite/silicon tandem solar cell; in addition, the organic salt synthesis process is mature and low in price, so that the interface passivation method has the advantages of high efficiency, stability and low cost.
While the invention has been described with reference to specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise; all of the disclosed features, or all of the method or process steps, may be combined in any combination, except mutually exclusive features and/or steps.

Claims (8)

1. A perovskite/silicon tandem solar cell comprising: from bottom to top stack gradually the silicon-based sub-battery, second Indium Tin Oxide (ITO) transparent electrode layer (8), hole transport layer (9), perovskite light absorption layer (11), electron transport layer (12), hole barrier layer (13) and metal electrode (14) that set up, its characterized in that sets up organic ionic type modifier passivation layer (10) between hole transport layer (9) and perovskite light absorption layer (11), organic ionic type modifier is pyridine sulfonic acid class organic salt.
2. The perovskite/silicon tandem solar cell according to claim 1, wherein the thickness of the organic ionic modifier passivation layer is 1 to 2 nm.
3. The perovskite/silicon tandem solar cell according to claim 1, wherein the organic ionic modifier is one of pyridine p-toluene sulfonate, pyridine methane sulfonate and pyridine propane sulfonate; the hole transport layer is a nickel oxide nanocrystalline film, and the perovskite light absorption layer is MAPbI3The electron transport layer is a fullerene derivative (PCBM) film, and the hole blocking layer is a Bathocuproine (BCP) film.
4. The perovskite/silicon tandem solar cell according to claim 1, wherein the silicon-based sub-cell is a silicon-based solar cell with a polished top surface, and specifically comprises: the ITO transparent conductive layer comprises a back conductive grid line (1), a first ITO transparent conductive layer (2), an n-type amorphous silicon layer (3), a first i-type amorphous silicon layer (4), a crystalline silicon layer (5), a second i-type amorphous silicon layer (6) and a p-type amorphous silicon layer (7) which are sequentially stacked from bottom to top.
5. A method of fabricating a perovskite/silicon tandem solar cell according to claim 3, comprising the steps of:
step 1, preparing a substrate: sputtering and preparing an ITO transparent conducting layer on the upper layer of the silicon-based solar sub-cell by taking the silicon-based solar sub-cell as a substrate, and cutting the ITO transparent conducting layer into a preset size;
step 2, preparing a hole transport layer: preparing a nickel oxide nanocrystalline thin film layer on the ITO transparent electrode layer;
step 3, preparing an organic ionic modifier passivation layer: preparing an organic ionic type modifier thin layer on the nickel oxide nanocrystalline thin film;
step 4, preparing a calcium iron ore light absorption layer: preparing a perovskite light absorption layer on the organic ionic modifier thin layer and annealing;
step 5, preparing an electron transport layer: preparing a fullerene derivative (PCBM) layer on the perovskite light absorption layer and annealing;
step 6, preparing a hole blocking layer: preparing a Bathocuproine (BCP) layer on the fullerene derivative (PCBM) layer and annealing;
step 7, preparing an electrode: and preparing a metal silver electrode on the Bathocuproine (BCP) layer.
6. The method for manufacturing a perovskite/silicon tandem solar cell as claimed in claim 5, wherein in the step 2, the nickel oxide nanocrystalline thin film is manufactured by a solution method, and first, the nickel oxide nanocrystalline powder is dispersed in a solvent to make the concentration of the nickel oxide nanocrystalline powder to be 10 to 20mgml-1The solvent is a mixed solvent of water and isopropanol, and the volume ratio of the mixed solvent to the isopropanol is 4: 1; then, spin-coating the nickel oxide nanocrystal solution on the ITO transparent electrode layer, wherein the spin-coating parameters are as follows: the rotating speed is 2500-3500 rpm, and the time is 30 seconds; and finally, drying the substrate in a drying oven for 8-10 hours to prepare a layer of nickel oxide nanocrystalline film with the thickness of 10-30 nanometers.
7. As set forth in claim 5The preparation method of the perovskite/silicon tandem solar cell is characterized in that in the step 3, a solution method is adopted to prepare a tosylate (PPTS) thin layer, firstly, PPTS powder is dissolved in N, N-Dimethylformamide (DMF), and the mixture is stirred for 1-3 hours at room temperature to be prepared into a solution with the concentration of 5mgml-1And filtering the solution through a PTFE filter head; then, spin-coating the solution on the nickel oxide nanocrystalline thin film, wherein the spin-coating parameters are as follows: the rotating speed is 2500-3500 rpm, the time is 30 seconds, and a thin film with uniform spin coating is obtained; and finally, placing the substrate on a hot table at 75 ℃, and annealing at a low temperature for 15-20 minutes to obtain the organic ionic modifier passivation layer with the thickness of 1-2 nanometers.
8. The method of fabricating the perovskite/silicon tandem solar cell according to claim 5, wherein in step 4, the MAPbI is fabricated by a one-step solution spin coating method3Film, first, taking PbI2And CH3NH3I is dissolved in a solvent according to the molar ratio of 1:1 to prepare a perovskite precursor solution, wherein the solvent is a mixed solution of dimethyl sulfoxide (DMSO) and DMF, and the volume ratio of the DMSO to the DMF is 1: 4; then, taking the perovskite precursor solution to spin-coat on the dipole molecule modification layer, wherein the spin-coating parameters are as follows: the rotating speed is 2500-3500 rpm, the time is 30 seconds, and 0.1-0.3 ml of anti-solvent (chlorobenzene or diethyl ether) is dripped in the 10 th s; and finally, placing the substrate on a hot table at 100 ℃, and carrying out annealing treatment for 25-30 minutes to obtain the perovskite light absorption layer with the thickness of 400-500 nanometers.
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