CN113192987A - SOI (silicon on insulator) body contact device structure and forming method thereof - Google Patents

SOI (silicon on insulator) body contact device structure and forming method thereof Download PDF

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CN113192987A
CN113192987A CN202110461246.9A CN202110461246A CN113192987A CN 113192987 A CN113192987 A CN 113192987A CN 202110461246 A CN202110461246 A CN 202110461246A CN 113192987 A CN113192987 A CN 113192987A
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region
layer
body contact
soi
sab
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CN113192987B (en
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陈宏�
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H01L27/1207—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands

Abstract

The SOI body contact device structure comprises an SOI substrate, wherein the SOI substrate is provided with an active region, an SAB layer and a grid structure are formed on the active region of the SOI substrate, the SAB layer and the grid structure are perpendicular to each other and are arranged in a T shape, the SAB layer and the grid structure divide the active region into a body contact region positioned above the SAB layer, and a source region and a drain region which are positioned below the SAB layer and are arranged at intervals by the active region; wherein the thickness of the SAB layer is much smaller than the height of the gate structure. The SAB layer is adopted to replace the original grid, so that the thickness of a structure above the first region and the second region can be reduced, and meanwhile, the side wall is not arranged, so that the forming effect of the cobalt silicide layer above the source region and the drain region is not influenced, the electric leakage phenomenon is avoided, and the electric property of the SOI body contact device is improved.

Description

SOI (silicon on insulator) body contact device structure and forming method thereof
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to an SOI (silicon on insulator) body contact device structure and a forming method thereof.
Background
Compared with a bulk silicon device, a silicon-on-insulator (SOI) device has the advantages of full-medium isolation, small parasitic capacitance, low power consumption, high speed, strong radiation resistance and the like. Therefore, SOI devices are widely used in digital, analog, and high reliability circuits. According to the difference between the thickness of the SOI top layer silicon and the well injection concentration of the MOS device, the SOI MOS device can be divided into a Partially Depleted (PD) SOI MOS device and a Fully Depleted (FD) SOI MOS device.
SOI technology brings about both device and circuit performance improvements and also inevitably brings about adverse effects, with the greatest problem being the floating body effect (floating body effect) of partially depleted SOI devices. When the thickness of the top silicon film of the device is larger than the width of the maximum depletion layer, due to the isolation effect of a buried oxide layer (BOX) in the structure, a part of the silicon film which is not depleted after the device is opened is in an electrically floating state, and the floating body structure can bring about a remarkable influence on the device characteristics, namely a floating body effect. The floating body effect can cause warpage (Kink) effects, reduced drain breakdown voltage, and abnormal sub-threshold slope, which can affect device performance. Since the floating body effect adversely affects the device performance, the study on how to suppress the floating body effect is always a hot spot in the study on SOI devices. The solution to the floating body effect is divided into two categories, one is to release accumulated holes by adopting a body contact mode, and the other is to reduce the floating body effect by adopting a source-drain engineering or a substrate engineering from the process perspective. The body contact is that a body region which is above a buried oxide layer and at the bottom of a silicon film in an electrically floating state is contacted with the outside, so that holes cannot be accumulated in the region, and therefore, the structure can successfully overcome the floating body effect of a partially depleted SOI MOS device.
Based on the principle of the body contact method, a plurality of structures are adopted to inhibit the floating body effect of the partially depleted SOI MOS device. One of which is partial depletion of T-gate
However, as shown in fig. 1, the MOS device of the conventional SOI body contact device structure includes: a silicon substrate (not shown), a buried oxide layer (not shown) and a top silicon 10 sequentially formed on the silicon substrate; and the T-shaped gate 101 is positioned above the top layer silicon 100, wherein the T-shaped gate 101 is composed of two parts which are vertically intersected, the T-shaped gate 101 comprises a transverse first gate 1011 and a longitudinal second gate 1012, so that the T-shaped gate 101 divides the active region into three parts which are respectively used for forming a source region 102, a drain region 103 and a body contact region 104 positioned in the top layer silicon, the doping types of the source region 102 and the drain region 103 are opposite to that of the top layer silicon, and the doping type of the body contact region 104 is the same as that of the top layer silicon. In addition, the source region 102, the drain region 103, the body contact region 104 and the T-type gate 101 of the partially depleted SOI MOS device are respectively led out through different contact holes 105. Before forming the contact hole 105, it is necessary to form a cobalt silicide layer on the surface of the source region 102, the surface of the drain region 103, and the surface of the T-shaped gate 101, respectively, but during Ar sputtering before forming the cobalt silicide layer, oxide on the T-shaped gate 101, especially on the sidewall of the first gate 1011 facing the source region 102 and the drain region 103, is easily sputtered and deposited on the edge region a of the source region 102 and the drain region 103 (as shown in fig. 2), which affects the formation effect of the cobalt silicide layer during cobalt sputtering, so that the SOI body contact device structure generates a leakage phenomenon, which causes poor electrical performance, and thus affects the electrical performance of the SOI body contact device.
Disclosure of Invention
The invention aims to provide an SOI (silicon on insulator) body contact device structure and a forming method thereof, so as to avoid the influence of oxide on the side wall of a grid structure, which is splashed and deposited on an active region when argon ions in front of a cobalt silicon compound layer are sputtered, on the forming effect of the cobalt silicon compound layer when cobalt is sputtered, avoid the electric leakage phenomenon and improve the electrical property of the SOI body contact device.
In order to solve the technical problem, the present invention provides an SOI body contact device structure, including an SOI substrate, the SOI substrate having an active region, an SAB layer and a gate structure being formed on the active region of the SOI substrate, the SAB layer and the gate structure being perpendicular and arranged in a T shape, the SAB layer and the gate structure dividing the active region into a body contact region located above the SAB layer, and a source region and a drain region located below the SAB layer and spaced by the active region;
wherein the thickness of the SAB layer is much smaller than the height of the gate structure.
Optionally, the thickness of the SAB layer is less than 0.3 times the height of the gate structure.
Further, the thickness of the SAB layer is less than 0.15 times of the height of the gate structure.
Further, the gate structure comprises a gate oxide layer and a gate located on the gate oxide layer.
Furthermore, the SOI substrate comprises a substrate, an insulating buried layer and top silicon, wherein both the substrate and the top silicon are doped with P-type ions.
Further, the insulating buried layer is a buried oxide layer, and the thickness of the insulating buried layer is less than 500 nm.
Furthermore, the body contact region is located in the P-type heavily doped region, and the source region and the drain region are located in the N-type doped region.
Further, a cobalt silicon compound layer is formed on the SOI substrate of the source region and the drain region.
Furthermore, a dielectric layer is formed on the active region, the dielectric layer covers the cobalt-silicon compound layer, the SAB layer and the grid structure of the active region, a contact hole is formed in the dielectric layer, and the contact hole is used for leading out the source region, the drain region, the body contact region and the grid.
In another aspect, the present invention further provides a method for forming an SOI body contact device structure, including the following steps:
providing an SOI substrate, wherein the SOI substrate is provided with an active region; and
forming an SAB layer and a grid electrode on the SOI substrate of the active region, wherein the SAB layer and the grid electrode are vertical and arranged in a T shape, the SAB layer and the grid electrode structure divide the active region into a body contact region positioned above the SAB layer and a source region and a drain region which are positioned below the SAB layer and are arranged by the active region at intervals, and the thickness of the SAB layer is far smaller than the height of the grid electrode structure.
Optionally, after forming the SAB layer and the gate, the method further includes:
performing an Ar sputtering precleaning process on the SOI substrate of the source region and the drain region; and
and performing a cobalt sputtering process on the SOI substrate of the source region and the drain region to form a cobalt silicon compound layer on the surface of the SOI substrate of the source region and the drain region so as to form an SOI body contact device structure.
Compared with the prior art, the method has the following beneficial effects:
the SOI body contact device structure comprises an SOI substrate, wherein the SOI substrate is provided with an active region, an SAB layer and a grid structure are formed on the active region of the SOI substrate, the SAB layer and the grid structure are perpendicular to each other and are arranged in a T shape, the SAB layer and the grid structure divide the active region into a body contact region positioned above the SAB layer, and a source region and a drain region which are positioned below the SAB layer and are arranged at intervals by the active region; wherein the thickness of the SAB layer is much smaller than the height of the gate structure. The SAB layer is adopted to replace the original grid, so that the thickness of a structure above the first region and the second region can be reduced, and meanwhile, the side wall is not arranged, so that the forming effect of the cobalt silicide layer above the source region and the drain region is not influenced, the electric leakage phenomenon is avoided, and the electric property of the SOI body contact device is improved.
Drawings
FIG. 1 is a schematic diagram of a top view of an SOI body contact device structure;
FIG. 2 illustrates the defects caused by Ar sputtering before cobalt sputtering of SOI body contact device structures;
fig. 3 is a schematic top view of an SOI body contact device structure according to an embodiment of the present disclosure.
Description of reference numerals:
in FIGS. 1-2:
10-top silicon; 101-T type gate; 1011-first gate; 1012-second gate; 102-a source region; 103-a drain region; 104-a body contact region; 105-a contact hole;
in fig. 3:
20-top silicon; 200-an active region; 201-a first area; 201-a first sub-area; 203-a second sub-region; 210-SAB layer; 220-a gate; 230-contact holes.
Detailed Description
As described in the background art, during the Ar sputtering before the cobalt silicide layer, the oxide on the T-shaped gate 101, especially on the sidewall of the first gate 1011 on the side facing the source region 102 and the drain region 103, is easily sputtered and deposited on the edge area a of the source region 102 and the drain region 103. The reason for this phenomenon is that, according to the analysis of the inventor, it is known that, because the height of the T-shaped gate 101 is high (which is usually about 2000 angstroms), and the sidewall has a slope, the oxide on the sidewall of the first gate 1011 facing the source region 102 and the drain region 103 is easily sputtered during the Ar sputtering, and after sputtering, the oxide flies out along the parabolic direction and deposits on the edge area a of the source region 102 and the drain region 103, so that the formation effect of the cobalt-silicon compound layer is affected, and the SOI body contact device structure generates a leakage phenomenon, which causes poor electrical properties, thereby affecting the performance of the SOI body contact device.
Based on the above analysis, the present invention provides an SOI body contact device structure, in which the SAB layer is used to replace the original gate, so that the thickness of the structure located above the first region and the second region can be reduced, and the sidewall is not used, which does not affect the formation effect of the cobalt silicide layer above the source region and the drain region, thereby avoiding the leakage phenomenon and improving the electrical performance of the SOI body contact device.
An SOI body contact device structure and method of forming the same of the present invention will be described in further detail below. The present invention will now be described in more detail with reference to the accompanying drawings, in which preferred embodiments of the invention are shown, it being understood that one skilled in the art may modify the invention herein described while still achieving the advantageous effects of the invention. Accordingly, the following description should be construed as broadly as possible to those skilled in the art and not as limiting the invention.
In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. It will of course be appreciated that in the development of any such actual embodiment, numerous implementation-specific details must be set forth in order to achieve the developer's specific goals, such as compliance with system-related and business-related constraints, which will vary from one implementation to another. Moreover, it will be appreciated that such a development effort might be complex and time-consuming, but would nevertheless be a routine undertaking for those of ordinary skill in the art.
In order to make the objects and features of the present invention more comprehensible, embodiments of the present invention are described in detail below with reference to the accompanying drawings. It is to be noted that the drawings are in a very simplified form and are all used in a non-precise ratio for the purpose of facilitating and distinctly aiding in the description of the embodiments of the invention.
Fig. 3 is a schematic top view of an SOI body contact device structure according to this embodiment. As shown in fig. 3, the present embodiment provides an SOI body contact device structure, which includes an SOI substrate, wherein the SOI substrate employed in the present embodiment is a P-type doped SOI wafer.
The SOI substrate includes a substrate (not shown), such as a P-type doped substrate, and may be a P-type doped silicon substrate in this embodiment, a buried insulating layer (not shown), and a top silicon layer 20; the buried insulating layer may be a buried oxide layer, typically less than 500nm thick; the top silicon 20 may be a P-doped top silicon with a typical thickness of 50nm to 10000nm, as shown by the outermost solid box surrounding area in fig. 3 for the top silicon 20.
The SOI substrate has an active region (ACT)200, an SAB layer 210 and a gate structure 220 are formed on the active region 200 of the SOI substrate, the SAB layer 210 and the gate structure 220 are vertically arranged in an intersecting manner, in this embodiment, a top view structure of the SAB layer 210 and the gate structure 220 is a T-shaped structure, in the top view direction, the SAB layer 210 divides the active region into a first region 210 and a second region, further, the gate structure 220 divides the second region into a first sub-region 202 and a second sub-region 203, the first region 201 includes a body contact region, the first sub-region 202 includes a source region, and the second sub-region 203 includes a drain region. In this embodiment, the source region, the drain region and the gate structure 220 are structures of the same MOS transistor, and a channel region (not shown in the figure) covered by the gate structure 220 is further provided between the source region and the drain region. The gate structure 220 includes a gate oxide layer (not shown) and a gate electrode formed from bottom to top. These structures constitute a complete MOS transistor. There is also a first well region (not shown) between the first region 210 and the second region, which is covered by the SAB layer 210.
The body contact region is located in a heavily P-doped region (PPLUS), and the body contact region is located in the top silicon 20 on the upper side (on the side away from the source and drain regions) of the SAB layer 210, and has the same doping type as the top silicon 20, as shown by the small dashed box surrounding region in fig. 3. The source and drain regions are located in N-type doped regions (NPLUS) having a doping type opposite to that of the top silicon 20, as shown by the large dashed-line encircled regions in fig. 3. The gate structure 220 is a structure on the top silicon 20 between the source and drain regions, and the gate is typically doped with the same type as the source and drain regions, as opposed to the body contact region, and thus, in this embodiment, it may be doped N-type. Specifically, the gate may be made of doped polysilicon, and further, the gate may be made of N-type doped polysilicon.
A portion of the SAB layer 210 is located on the top silicon 20 of the first well region, and a portion of the SAB layer is located above the top silicon 20 of the body contact region, and usually an insulating layer (not shown) is also located between the SAB layer 210 and the body contact region, and the insulating layer may be an oxide layer. The thickness of the SAB layer 210 is much smaller than the height of the gate structure 220, and further, the thickness of the SAB layer 210 is less than 0.3 times the height of the gate structure 220, specifically, 0.05 times, 0.1 times, 0.15 times, 0.2 times, 0.25 times, and 0.3 times, and preferably, the thickness of the SAB layer 210 is less than 0.15 times the height of the gate structure 220. The two sides of the gate structure 220 are provided with side walls (not shown in the figure), the SAB layer 210 does not have side walls, so that the thickness of the upper structure of the top silicon 20 between the first region 210 and the second region can be reduced by adopting the SAB layer 210 to replace the original gate structure, and meanwhile, the side walls are not provided, so that the forming effect of the cobalt silicide layer above the source region and the drain region is not influenced, the electric leakage phenomenon is avoided, and the electric property of the SOI body contact device is improved.
A cobalt silicon compound layer is formed in the source region and the drain region of the second region, a dielectric layer is formed on the cobalt silicon compound layer, the gate structure 220, the SAB layer 210 and the body contact region, and a contact hole 230 is formed to lead out the source region, the drain region, the body contact region and the gate, wherein the cobalt silicon compound layer is exposed from the bottom of the contact hole positioned in the source region and the drain region.
The embodiment also provides a method for forming an SOI body contact device structure, which comprises the following steps:
referring to fig. 3, first, an SOI substrate is provided, and the SOI substrate sequentially includes, from bottom to top, a substrate, a buried insulating layer, and a top silicon 20, and the SOI substrate has an active region.
Wherein, the SOI substrate is, for example, a P-type doped substrate, which may be generally low resistance, high resistance or trap rich; the buried insulating layer may be a buried oxide layer, typically less than 500nm thick; the top silicon 20 may be a P-doped top silicon, typically 50nm to 10000nm thick.
Next, an SAB layer 210 and a gate structure 220 are formed on the SOI substrate of the active region, the SAB layer 210 and the gate structure 220 are vertically intersected, and the top view structure of the SAB layer 210 and the gate structure 220 is a T-shaped structure.
Wherein the SAB layer 210 divides the active region into a first region 210 and a second region, the gate structure 220 divides the second region into a first sub-region 202 and a second sub-region 203, the first region 201 includes a body contact region, the first sub-region 202 includes a source region, and the second sub-region 203 includes a drain region.
A gate oxide layer is also formed between the gate structure 220 and the SOI substrate.
The method for forming the SAB layer 210 comprises the following steps:
an SAB film layer is deposited, a patterned photoresist layer is formed on the SAB film layer, and an SAB layer 210 is formed by a dry etching process. The thickness of the SAB layer 210 is much less than the height of the gate structure 220.
And then, forming a cobalt-silicon compound layer on the top silicon 20 of the source region and the drain region, specifically, pre-cleaning the source region and the drain region by Ar sputtering, wherein in the process, because the height of the SAB layer 210 is lower and the SAB layer 210 has no side wall, oxide splashing does not occur at the corner of the second region close to the SAB layer 210 during Ar sputtering, so that the forming effect of the cobalt-silicon compound layer during cobalt sputtering is not influenced by the step, the electric leakage phenomenon is avoided, and the electrical property of the SOI body contact device is improved.
And then, forming a dielectric layer on the second region and the first region, and forming a contact hole in the dielectric layer to lead out the source region, the drain region, the body contact region and the grid electrode, wherein the cobalt-silicon compound layer is exposed out of the hole bottoms of the contact holes positioned in the source region and the drain region.
In summary, in the SOI body contact device structure and the forming method thereof provided by the present invention, the SOI body contact device structure includes an SOI substrate, the SOI substrate has an active region, an SAB layer and a gate structure are formed on the active region of the SOI substrate, the SAB layer and the gate structure are perpendicular and arranged in a T shape, the SAB layer and the gate structure divide the active region into a body contact region located above the SAB layer, and a source region and a drain region located below the SAB layer and spaced by the active region; wherein the thickness of the SAB layer is much smaller than the height of the gate structure. The SAB layer is adopted to replace the original grid, so that the thickness of a structure above the first region and the second region can be reduced, and meanwhile, the side wall is not arranged, so that the forming effect of the cobalt silicide layer above the source region and the drain region is not influenced, the electric leakage phenomenon is avoided, and the electric property of the SOI body contact device is improved.
In addition, unless otherwise specified or indicated, the description of the terms "first" and "second" in the specification is only used for distinguishing various components, elements, steps and the like in the specification, and is not used for representing logical relationships or sequential relationships among the various components, elements, steps and the like.
It is to be understood that while the present invention has been described in conjunction with the preferred embodiments thereof, it is not intended to limit the invention to those embodiments. It will be apparent to those skilled in the art from this disclosure that many changes and modifications can be made, or equivalents modified, in the embodiments of the invention without departing from the scope of the invention. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention, unless the contents of the technical solution of the present invention are departed.

Claims (11)

1. An SOI body contact device structure is characterized by comprising an SOI substrate, wherein the SOI substrate is provided with an active region, an SAB layer and a grid structure are formed on the active region of the SOI substrate, the SAB layer and the grid structure are perpendicular to each other and arranged in a T shape, the SAB layer and the grid structure divide the active region into a body contact region positioned above the SAB layer, and a source region and a drain region which are positioned below the SAB layer and are separated by the active region;
wherein the thickness of the SAB layer is much smaller than the height of the gate structure.
2. The SOI body contact device structure of claim 1 wherein the thickness of the SAB layer is less than 0.3 times the height of the gate structure.
3. The SOI body contact device structure of claim 2 wherein the thickness of the SAB layer is less than 0.15 times the height of the gate structure.
4. The SOI body contact device structure of any of claims 1-3 wherein the gate structure comprises a gate oxide layer and a gate located on the gate oxide layer.
5. The SOI body contact device structure of any of claims 1-3 wherein the SOI substrate comprises a substrate, a buried insulating layer, and a top silicon, both of which are doped with P-type ions.
6. The SOI body contact device structure of claim 5 wherein the buried insulating layer is a buried oxide layer having a thickness of less than 500 nm.
7. The SOI body contact device structure of claim 6 wherein the body contact regions are located in heavily P-doped regions and the source and drain regions are located in heavily N-doped regions.
8. The SOI body contact device structure of claim 7 wherein the SOI substrate of the source and drain regions is further formed with a cobalt silicon compound layer.
9. The SOI body contact device structure of claim 8 wherein a dielectric layer is further formed over the active region, the dielectric layer overlying the cobalt silicon compound layer, the SAB layer and the gate structure of the active region, a contact hole formed in the dielectric layer for extracting the source region, the drain region, the body contact region and the gate.
10. A method of forming an SOI body contact device structure for use in preparing an SOI body contact device structure as claimed in any of claims 1 to 9, comprising the steps of:
providing an SOI substrate, wherein the SOI substrate is provided with an active region; and
forming an SAB layer and a grid electrode on the SOI substrate of the active region, wherein the SAB layer and the grid electrode are vertical and arranged in a T shape, the SAB layer and the grid electrode structure divide the active region into a body contact region positioned above the SAB layer and a source region and a drain region which are positioned below the SAB layer and are arranged by the active region at intervals, and the thickness of the SAB layer is far smaller than the height of the grid electrode structure.
11. The method of forming an SOI body contact device structure of claim 10 further comprising, after forming the SAB layer and the gate:
performing an Ar sputtering precleaning process on the SOI substrate of the source region and the drain region; and
and performing a cobalt sputtering process on the SOI substrate of the source region and the drain region to form a cobalt silicon compound layer on the surface of the SOI substrate of the source region and the drain region so as to form an SOI body contact device structure.
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