CN113186518A - Gas mixing device - Google Patents
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- CN113186518A CN113186518A CN202110477906.2A CN202110477906A CN113186518A CN 113186518 A CN113186518 A CN 113186518A CN 202110477906 A CN202110477906 A CN 202110477906A CN 113186518 A CN113186518 A CN 113186518A
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- 230000035515 penetration Effects 0.000 claims abstract description 7
- 238000003466 welding Methods 0.000 claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 230000007774 longterm Effects 0.000 abstract description 5
- 238000007789 sealing Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 170
- 239000013078 crystal Substances 0.000 description 17
- 239000000203 mixture Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
Abstract
The invention discloses a gas mixing device, which comprises a gas mixing tank and a spiral mixer core, wherein a left end cover is arranged at one end of the gas mixing tank, a gas outlet pipe is arranged on one side of the left end cover, a pipe joint is arranged on the inner side of the gas outlet pipe, a right end cover is arranged at the other end of the gas mixing tank, a gas inlet pipe a is arranged on the outer wall of the gas mixing tank, a gas inlet pipe b is arranged on one side of the gas inlet pipe a, a gas inlet pipe c is arranged on one side of the gas inlet; according to the invention, a plurality of groups of air inlet pipes are adopted to simultaneously input air into the cavity, the air inlet pipe a rotates along the air mixing tank and the spiral mixer core and drives the air at the air inlet pipe b, the air inlet pipe c and the air inlet pipe d to rotate, flow and mix, so that the air with different components is fully mixed, and a full penetration welding structure is adopted to ensure the integral sealing property of the device and avoid the hidden danger of inward leakage of external air caused by long-term production.
Description
Technical Field
The invention relates to the technical field of deposited diamond, in particular to a gas mixing device.
Background
Microwave Plasma Chemical Vapor Deposition (MPCVD), which is a working environment in a Plasma state around the surface of a deposited material excited by Microwave energy in a state close to vacuum rarefied gas, so as to activate peripheral electrons of molecules on the surface of the deposited material and ions in the Plasma state to form covalent orbital mechanical Chemical bonds, thereby achieving the purpose of Deposition, which is one of the most advanced techniques for growing diamond materials in the world at present, and during the production process of Plasma Chemical Vapor Deposition, the rarefied degree, Chemical components and mixing ratio of gas are very critical factors influencing the high-quality growth of the deposited material and are also basic requirements for generating Plasma state atmosphere;
the existing gas mixing device is in a micro storage tank form, and is also communicated with a simple gas pipeline, under the condition that the content difference of gas components is very large, the serious uneven mixing condition exists, uneven mixed gas exists, or even mixed gas cannot be output in real time, different degrees of influence can be generated on the production process, and the use requirement cannot be met.
Disclosure of Invention
The invention aims to provide a gas mixing device which is used for solving the technical problems of generation of mixed crystals, disordered lattice structure, unbalanced seed crystal growth, slow growth and the like in the seed crystal growth process caused by non-uniform gas transmission components.
The above object of the present invention is achieved by the following technical solutions: a gas mixing device comprises a gas mixing tank and a spiral mixer core, wherein a left end cover is arranged at one end of the gas mixing tank, a gas outlet pipe is arranged on one side of the left end cover, a pipe joint is arranged on the inner side of the gas outlet pipe, an internal gas outlet pipe orifice is arranged on one side inside the gas mixing tank, a right end cover is arranged at the other end of the gas mixing tank, and a gas inlet pipe is arranged on the outer wall of the gas mixing tank;
the intake pipe is including intake pipe an, intake pipe b, intake pipe c and intake pipe d, the gas mixing tank outer wall is provided with intake pipe a, intake pipe a one side is provided with intake pipe b, intake pipe b one side is provided with intake pipe c, intake pipe c one side is provided with intake pipe d, the inside helical mixer core that is provided with of gas mixing tank.
The invention is further configured to: the air inlet pipe is provided with a plurality of groups which are arranged in the order of flow from large to small, and the minimum flow air inlet is close to the inner air outlet pipe mouth of the air mixing tank.
The invention is further configured to: a plurality of groups of air inlets are formed in the inner wall of the air mixing tank, the air inlets are respectively in one-to-one correspondence with the air inlet pipe a, the air inlet pipe b, the air inlet pipe c and the air inlet pipe d, and the air inlets enter the air mixing tank tangentially.
Through adopting above-mentioned technical scheme, rotatory flow along gas-mixing jar inner wall and spiral mixer core to drive intake pipe b, intake pipe c and the gaseous rotatory flow of intake pipe d, make the gas of different components fully mix in short stroke, reach the requirement of the even standard of mixing.
The invention is further configured to: the air inlet pipe can be simply designed to enter the interior of the air mixing tank in a non-tangential way.
Through adopting above-mentioned technical scheme, be convenient for carry out intensive mixing to gas component, improve the flexibility that the device used.
The invention is further configured to: and the gas component flows from the gas inlet pipe a to the gas inlet pipe d are gradually reduced step by step in sequence, and the minimum flow gas inlet is arranged at one end of the gas outlet pipe orifice in the gas mixing tank.
By adopting the technical scheme, the multi-path highly-rarefied gas is uniformly mixed, and the generation of mixed crystals and the disorder of a crystal lattice structure caused by the growth of seed crystals due to the non-uniform components of the input gas are avoided.
The invention is further configured to: the inside mouth of pipe and the outlet duct of giving vent to anger of gas mixing tank can be at the same end of gas mixing tank, the inside mouth of pipe and the outlet duct of giving vent to anger of gas mixing tank can not be at the same end.
By adopting the technical scheme, the introduction and mixing of trace gas are realized, so that different component gases are fully mixed.
The invention is further configured to: the spiral mixer core is fixedly connected with the inner wall of the right end cover, and the spiral mixer core is of a spiral blade structure.
Through adopting above-mentioned technical scheme, gas makes the device have longer gas mixing stroke under the effect of spiral mixer core when letting in gas mixing tank inside for the gas mixing of different components is even.
The invention is further configured to: the spiral mixer core is fixedly connected with the inner wall of the right end cover, and the spiral mixer core is of a spiral blade structure.
Through adopting above-mentioned technical scheme, gas makes the device have longer gas mixing stroke under the effect of spiral mixer core when letting in gas mixing tank inside for the gas mixing of different components is even.
The invention is further configured to: the outer wall of the pipe joint and the inner wall of the air outlet pipe are mutually sleeved and matched in a threaded screwing mode.
Through adopting above-mentioned technical scheme, the mode that adopts the screw thread to close soon is connected in order to guarantee the leakproofness of the device outlet duct position, prevents gaseous the revealing, and the coupling can be convenient be connected with external equipment simultaneously, conveniently produces the use, improves the device's practicality.
In conclusion, the beneficial technical effects of the invention are as follows:
1. according to the gas mixing device, structurally, a plurality of groups of gas inlet pipes are adopted to simultaneously input gas into a cavity, the flow rates of gas components from the gas inlet pipe a to the gas inlet pipe d are sequentially reduced step by step, the uniformity of raw material gas mixing is greatly improved, and the problems of mixed crystals, disordered lattice structures, unbalanced seed crystal growth and the like in the seed crystal growth process caused by uneven input gas components are avoided;
2. structurally, intake pipe a mouth is for admitting air large-traffic flow for a long time, along gas mixing tank and the rotatory flow of spiral mixer core to the rotatory mobile mixture of gas that drives intake pipe b, intake pipe c and intake pipe d department makes the gas of different components obtain intensive mixing, and flows through the outlet duct, simple structure moreover, and the practicality is strong.
3. Structurally, the leakage rate is controllable, adopts full penetration welding structure between gas mixing tank, left end lid and the right-hand member lid to guarantee the holistic leakproofness of the device, avoid appearing the hidden danger that long-term production leads to the inside seepage of outside air.
Drawings
FIG. 1 is a schematic view of the overall structure of a gas mixing apparatus according to the present invention;
FIG. 2 is a schematic view of the internal structure of a gas mixing apparatus according to the present invention;
FIG. 3 is a schematic view of the overall structure of another embodiment of a gas mixing device according to the present invention;
FIG. 4 is a schematic view of the internal structure of another embodiment of the gas mixing device of the present invention.
In the figure, 1, a gas mixing tank; 2. a left end cap; 3. an air outlet pipe; 4. a pipe joint; 5. a right end cap; 6. an air inlet pipe a; 7. an air inlet pipe b; 8. an air inlet pipe c; 9. an air inlet pipe d; 10. a helical mixer core; 11. an air inlet, 12, an air inlet pipe; 13. an inner air outlet pipe orifice.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and all other embodiments obtained by a person of ordinary skill in the art without creative efforts based on the embodiments of the present invention belong to the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
Example 1
Referring to fig. 1 and 2, the gas mixing device disclosed by the invention comprises a gas mixing tank 1 and a spiral mixer core 10, wherein an air inlet pipe a6 is arranged on the outer wall of the gas mixing tank 1, an air inlet pipe b7 is arranged on one side of an air inlet pipe a6, an air inlet pipe c8 is arranged on one side of an air inlet pipe b7, an air inlet pipe d9 is arranged on one side of an air inlet pipe c8, the spiral mixer core 10 is arranged in the gas mixing tank 1, and an air inlet 11 is formed in the inner wall of the gas mixing tank 1;
in the embodiment, during the use process, the maximum flow component is firstly introduced through the air inlet pipe a6, the maximum flow component tangentially enters the spiral mixer core 10 at the air inlet 11, so that the device has a high gas flow rate at the beginning of gas mixing, a trace amount of gas component is introduced through an external device sequentially through the air inlet pipe b7, the air inlet pipe c8 and the air inlet pipe d9, and flows along the gas mixing tank 1 and the spiral mixer core 10 in a rotating manner.
As shown in fig. 1 and 2, a spiral mixer core 10 is arranged inside a gas mixing tank 1, a gas inlet pipe a6 is arranged on the outer wall of the gas mixing tank 1, a gas inlet pipe b7 is arranged on one side of the gas inlet pipe a6, a gas inlet pipe c8 is arranged on one side of the gas inlet pipe b7, a gas inlet pipe d9 is arranged on one side of the gas inlet pipe c8, a left end cover 2 is arranged at one end of the gas mixing tank 1, a gas outlet pipe 3 is arranged on one side of the left end cover 2, a pipe joint 4 is arranged on the inner side of the gas outlet pipe 3, and a right end cover 5 is arranged at the other end of the gas mixing tank 1;
in this embodiment, make the device have longer gas mixing stroke under spiral mixer core 10's effect, make the gas misce bene of different components, and drive intake pipe b7, the gaseous rotatory flow of intake pipe c8 and intake pipe d9 department mixes, make the gas of different components obtain the intensive mixing, realize the gaseous even mixture of admitting air of multichannel rarefied, flow out through outlet duct 3, coupling 4 can be convenient be connected with external equipment, conveniently carry out the production and use, avoid producing miscellaneous crystal because of the input gas composition is inhomogeneous causes the seed crystal growth, the lattice structure takes place the confusion, gas mixing tank 1, adopt full penetration welding structure between left end lid 2 and the right end lid 5, in order to guarantee the holistic leakproofness of the device, avoid appearing long-term production and lead to the hidden danger of outside air inward leakage.
Referring to fig. 2, a plurality of groups of air inlets 11 have been seted up altogether to the inner wall of gas mixing tank 1, air inlet 11 respectively with intake pipe a6, intake pipe b7, intake pipe c8 and intake pipe d9 one-to-one, and inside the equal tangential entering of air inlet 11 mixes gas tank 1, along mixing tank 1 inner wall and spiral mixer core 10 rotatory flow, and drive intake pipe b7, intake pipe c8 and the gaseous rotatory flow of intake pipe d9, make the gaseous intensive mixture in short stroke of different components, reach the requirement of the even standard of mixing.
Referring to fig. 2, the gas inlet pipe 12 can be simply designed to enter the inside of the gas mixing tank 1 in a non-tangential manner, so that the gas components can be mixed sufficiently, and the flexibility of the device is improved.
Referring to fig. 2, four sets of air inlets 11 are provided on the inner wall of the air mixing tank 1 and are arranged in a linear and uniform manner, the air inlets 11 respectively correspond to an air inlet pipe a6, an air inlet pipe b7, an air inlet pipe c8 and an air inlet pipe d9 one-to-one, the air inlets 11 enter the air mixing tank 1 tangentially, and flow along the inner wall of the air mixing tank 1 and the spiral mixer core 10 in a rotating manner, and drive the air inlet pipe b7, the air inlet pipe c8 and the air inlet pipe d9 to flow in a rotating manner, so that the gases with different components are mixed fully in a short stroke, and the requirement of the uniform mixing standard is met.
Referring to fig. 2, the flow rate of the inlet pipe a6 is 400-800ml/min, and the gas with the maximum flow component is firstly introduced, so that the device has a higher gas flow rate at the beginning of gas mixing, and is convenient for fully mixing the subsequent gas components.
Referring to fig. 2, the flow rate of the opening of the air inlet pipe b7 is 20-50ml/min, so that the multi-path highly-rarefied gas is uniformly mixed, and the phenomena of mixed crystals and disordered lattice structures generated by seed crystal growth due to nonuniform components of the input gas are avoided.
Referring to fig. 2, the flow rate of the inlet c8 is 1-5ml/min, so that the introduction and mixing of trace gases are realized, and the gases with different components are fully mixed.
Referring to fig. 2, the flow rate of the d9 port of the air inlet pipe is 0.02-0.1ml/min, and under the flow of the a6 port of the air inlet pipe, the purpose of accurately controlling trace gas components can be achieved through flow rate and time control, and meanwhile, the residue of the trace gas components can be eliminated.
Referring to fig. 2, the spiral mixer core 10 is fixedly connected with the inner wall of the right end cover 5, and when gas is introduced into the gas mixing tank 1, the device has a longer gas mixing stroke under the action of the spiral mixer core 10, so that the gas with different components is uniformly mixed.
Referring to fig. 2, the flow rates of the gas components from the gas inlet pipe a6 to the gas inlet pipe d9 are gradually decreased step by step, the gas in the gas inlet pipe a6 flows in a large flow for a long time, the flow direction is single and stable, and when the flow rate of any one of the gas in the gas inlet pipe b7, the gas inlet pipe c8 or the gas inlet pipe d9 is changed, residual gas components cannot remain in the cavity, so that the purpose of accurate control is achieved.
Referring to fig. 1, a full penetration welding structure is adopted among a gas mixing tank 1, a left end cover 2 and a right end cover 5, a spiral mixer core 10 is of a spiral blade structure, and the leakage rate is 2.4 x 10-9pa-1.4 x 10-11pa, so that the overall sealing performance of the device is ensured, the leakage rate is controllable, and the hidden danger that external air leaks inwards due to long-term production is avoided.
Referring to fig. 1, the mutual suit adaptation of the mode that the 4 outer walls of coupling and 3 inner walls of outlet duct adopt the screw thread to close soon adopts the screw thread to close soon the mode to connect in order to guarantee the leakproofness of the 3 positions of the device outlet duct, prevents gaseous revealing, and coupling 4 can be convenient be connected with external equipment simultaneously, conveniently carries out the plant use, improves the device's practicality.
Example 2
As shown in fig. 3 and 4, one end of the gas mixing tank 1 is provided with a left end cover 2, one side of the left end cover 2 is provided with a gas outlet pipe 3, the inner side of the gas outlet pipe 3 is provided with a pipe joint 4, the other end of the gas mixing tank 1 is provided with a right end cover 5, the outer wall of the gas mixing tank 1 is provided with a gas inlet pipe a6, one side of the gas inlet pipe a6 is provided with a gas inlet pipe b7, one side of the gas inlet pipe b7 is provided with a gas inlet pipe c8, one side of the gas inlet pipe c8 is provided with a gas inlet pipe d9, a spiral mixer core 10 in the gas mixing tank 1 is provided with a cavity, and the inner wall of the gas mixing tank 1 is provided with a gas inlet 11;
in this embodiment, the maximum flow component is introduced through the gas inlet pipe a6, and enters the cavity at the gas inlet 11, so that the device has a high gas flow rate at the beginning of the mixed gas, trace gas components are introduced through the external equipment sequentially through the gas inlet pipe b7, the gas inlet pipe c8 and the gas inlet pipe d9, and flow and mix at a high speed along the gas mixing tank 1, so that the device has a long gas mixing stroke, so that the gases of different components are mixed uniformly, and the gases at the positions of the gas inlet pipe b7, the gas inlet pipe c8 and the gas inlet pipe d9 are driven to flow and mix, so that the gases of different components are fully mixed, thereby realizing uniform mixing of multiple paths of highly diluted gases, and flowing out through the gas outlet pipe 3, the pipe joint 4 can be conveniently connected with the external equipment, the production and use are convenient, and the generation of mixed crystals and disorder of the crystal lattice structure caused by uneven composition of the input gas are avoided, the gas mixing tank 1, the left end cover 2 and the right end cover 5 adopt a full penetration welding structure to ensure the overall sealing performance of the device.
The implementation principle of the embodiment is as follows:
the invention relates to a gas mixing device, in the using process, firstly, a maximum flow component is introduced through an air inlet pipe a6, the maximum flow component tangentially enters a spiral mixer core 10 at an air inlet 11, so that the device has higher gas flow rate at the beginning of mixed gas, trace gas components are introduced through external equipment through an air inlet pipe b7, an air inlet pipe c8 and an air inlet pipe d9 in sequence, the trace gas components flow along a gas mixing tank 1 and the spiral mixer core 10 in a rotating mode, the device has a longer gas mixing stroke under the action of the spiral mixer core 10, so that gases with different components are mixed uniformly, the gases at the air inlet pipe b7, the air inlet pipe c8 and the air inlet pipe d9 are driven to flow and mix in a rotating mode, the gases with different components are fully mixed, the uniform mixing of the multi-path highly-rarefied gas is realized, the gases flow out through an air outlet pipe 3, the convenient use of carrying out production avoids producing miscellaneous crystal, lattice structure because of the inhomogeneous seed crystal growth that causes of input gas composition and takes place the confusion, adopts full penetration welding structure between gas mixing tank 1, left end lid 2 and the right-hand member lid 5 to guarantee the holistic leakproofness of the device, avoid appearing long-term production and lead to the hidden danger of outside air inside seepage, in order to solve the technical problem who exists among the prior art.
While there have been shown and described the fundamental principles and essential features of the invention and advantages thereof, it will be apparent to those skilled in the art that the invention is not limited to the details of the foregoing exemplary embodiments, but is capable of other specific forms without departing from the spirit or essential characteristics thereof; the present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein, and any reference signs in the claims are not intended to be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (9)
1. A gas mixing device comprising a gas mixing tank (1) and a helical mixer core (10), characterized in that: a left end cover (2) is arranged at one end of the gas mixing tank (1), a gas outlet pipe (3) is arranged on one side of the left end cover (2), a pipe joint (4) is arranged on the inner side of the gas outlet pipe (3), an internal gas outlet pipe orifice (13) is arranged on one side of the interior of the gas mixing tank (1), a right end cover (5) is arranged at the other end of the gas mixing tank (1), and a gas inlet pipe (12) is arranged on the outer wall of the gas mixing tank (1);
intake pipe (12) are including intake pipe a (6), intake pipe b (7), intake pipe c (8) and intake pipe d (9), gas mixing tank (1) outer wall is provided with intake pipe a (6), intake pipe a (6) one side is provided with intake pipe b (7), intake pipe b (7) one side is provided with intake pipe c (8), intake pipe c (8) one side is provided with intake pipe d (9), gas mixing tank (1) inside is provided with spiral mixer core (10).
2. A gas mixing apparatus according to claim 1, wherein: the air inlet pipe (12) is provided with a plurality of groups which are arranged in the order of flow from large to small, and the minimum flow air inlet is close to the inner air outlet pipe mouth (13) of the air mixing tank (1).
3. A gas mixing apparatus according to claim 1, wherein: mix gas pitcher (1) inner wall and seted up a plurality of groups air inlet (11) altogether, air inlet (11) respectively with intake pipe a (6) intake pipe b (7) intake pipe c (8) with intake pipe d (9) one-to-one, just inside air inlet (11) equal tangential entering mixes gas pitcher (1).
4. A gas mixing apparatus according to claim 1 or 3, wherein: the intake pipes (12) can be simply designed to enter the inside of the gas mixing tank (1) in a non-tangential way.
5. A gas mixing apparatus according to claim 1, wherein: the gas component flow rates of the gas inlet pipes a (6) to d (9) are gradually reduced step by step in sequence, and the minimum flow gas inlet is arranged at one end of a gas outlet pipe opening (13) in the gas mixing tank (1).
6. A gas mixing device according to claim 1 or 5, wherein: the inside mouth of pipe (13) of giving vent to anger of gas mixing jar (1) can be in the same end of gas mixing jar (1) with outlet duct (3), the inside mouth of pipe (13) of giving vent to anger of gas mixing jar (1) can not be in the same end with outlet duct (3).
7. A gas mixing apparatus according to claim 1, wherein: the spiral mixer core (10) is fixedly connected with the inner wall of the right end cover (5), and the spiral mixer core (10) is of a spiral blade structure.
8. A gas mixing apparatus according to claim 1, wherein: the gas mixing tank (1), the left end cover (2) and the right end cover (5) adopt a full penetration welding structure, and the leakage rate is 2.4 x 10-9pa-1.4*10-11pa。
9. A gas mixing apparatus according to claim 1, wherein: the outer wall of the pipe joint (4) and the inner wall of the air outlet pipe (3) are mutually sleeved and matched in a threaded screwing mode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110477906.2A CN113186518A (en) | 2021-04-29 | 2021-04-29 | Gas mixing device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110477906.2A CN113186518A (en) | 2021-04-29 | 2021-04-29 | Gas mixing device |
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| CN113186518A true CN113186518A (en) | 2021-07-30 |
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| CN202110477906.2A Pending CN113186518A (en) | 2021-04-29 | 2021-04-29 | Gas mixing device |
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|---|---|---|---|---|
| JPH09287883A (en) * | 1996-04-18 | 1997-11-04 | Mitsubishi Heavy Ind Ltd | Mixer |
| CN102732852A (en) * | 2012-07-06 | 2012-10-17 | 乐山新天源太阳能科技有限公司 | Silicon nitride film preparation device |
| CN205190013U (en) * | 2015-12-02 | 2016-04-27 | 无锡威孚力达催化净化器有限责任公司 | SCR aftertreatment hybrid chamber |
| CN205400907U (en) * | 2016-03-03 | 2016-07-27 | 北京石油化工学院 | Miniature for gas turbine gas mixer of external -burning marsh gas |
| CN105817150A (en) * | 2016-03-25 | 2016-08-03 | 成都超迈南光科技有限公司 | Multi-gas rapid mixing device for special electronic vacuum equipment |
| CN208130847U (en) * | 2018-01-26 | 2018-11-23 | 宁波星箭航天机械有限公司 | Gas mixing tank |
| CN209081473U (en) * | 2018-11-27 | 2019-07-09 | 无锡源申环保设备有限公司 | A kind of high-efficiency dissolued-air device |
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2021
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| CN102732852A (en) * | 2012-07-06 | 2012-10-17 | 乐山新天源太阳能科技有限公司 | Silicon nitride film preparation device |
| CN205190013U (en) * | 2015-12-02 | 2016-04-27 | 无锡威孚力达催化净化器有限责任公司 | SCR aftertreatment hybrid chamber |
| CN205400907U (en) * | 2016-03-03 | 2016-07-27 | 北京石油化工学院 | Miniature for gas turbine gas mixer of external -burning marsh gas |
| CN105817150A (en) * | 2016-03-25 | 2016-08-03 | 成都超迈南光科技有限公司 | Multi-gas rapid mixing device for special electronic vacuum equipment |
| CN208130847U (en) * | 2018-01-26 | 2018-11-23 | 宁波星箭航天机械有限公司 | Gas mixing tank |
| CN209081473U (en) * | 2018-11-27 | 2019-07-09 | 无锡源申环保设备有限公司 | A kind of high-efficiency dissolued-air device |
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